CN115218788A - Silicon four-quadrant detector working at wavelength larger than 1.1 micrometer and positioning system - Google Patents
Silicon four-quadrant detector working at wavelength larger than 1.1 micrometer and positioning system Download PDFInfo
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Abstract
The invention discloses a silicon four-quadrant detector working at a wavelength of more than 1.1 micron and a light beam positioning system, wherein the origin O of the silicon four-quadrant detector is positioned at the center of the four-quadrant photodetector, and the x axis and the y axis are respectively parallel to the horizontal edge and the vertical edge of a photosensitive area; the four photodetectors are separated by a blind zone of width d; the four photoelectric detectors are sequentially controlled by an external computer to be switched on and switched off; the silicon four-quadrant detector comprises a substrate, an oxide layer, four photosensitive areas and a titanium electrode. The system comprises: the system is applied to light beam positioning and light beam deflection angle measurement, and breaks through the limitation of long wave limit by utilizing sub-band gap light absorption, so that the system can work in a visible light wave band and can also work in an infrared wave band with the wavelength larger than 1.1 microns. The incident light changes the admittance of each quadrant photodetector through sub-bandgap light absorption, and this change in admittance is eventually read out by a phase-locked readout circuit.
Description
Technical Field
The invention relates to the field of optoelectronic devices, in particular to a silicon four-quadrant detector and a light beam positioning system which work at a wavelength larger than 1.1 micrometer.
Background
The four-quadrant detector is a photoelectric position detector used in the fields of optical tweezers, atomic force microscopes, light spot positioning and tracking, angle deflection measurement and the like, and comprises four photoelectric detectors with the same shape and performance, wherein the four photoelectric detectors are distributed in four quadrants at equal intervals according to a Cartesian coordinate system. When light to be detected is incident to a working area, four quadrants of the detector can generate photocurrent, but the photocurrent generated by the four quadrants is different in size due to uneven distribution of the light signals, and the incident position of the light signal at the moment is obtained through calculation according to the size proportion of the photocurrent. The working characteristics of the four-quadrant detector are limited by the sub-photoelectric detectors, and the detection long wave is limited by the materials of the photosensitive areas of the sub-photoelectric detectors.
The four-quadrant detector can be applied to an optical system to realize accurate positioning of light beams in a light path. When light beams are incident on the four-quadrant detector, the light signals are unevenly distributed on the photosensitive surface of the four-quadrant detector, so that the four quadrants generate different photocurrents; and measuring and calculating incident light power according to the photocurrent, and determining the position of the light spot according to the relative magnitude of the incident light power.
The four-quadrant detector can be matched with an optical system to realize the measurement of the deflection angle on the basis of the positioning of the light beam. In the concrete implementation, the obliquely incident light beams are converted into parallel light beams through a front-end optical system, namely, the incident angle is converted into the displacement on the photosensitive surface, the incident angle of the light beams is calculated through the deviation of the light beams incident on the photosensitive surface relative to the central position, and finally the deflection angle is obtained.
Surface State Absorption (SSA) is a physical effect that is widely present in semiconductor materials and that can absorb light with photon energies less than the bandgap (i.e., sub-bandgap) of the semiconductor material, breaking through the long wavelength limit of the material (for silicon materials, the long wavelength limit is about 1.1 microns). After light with the sub-band gap wavelength irradiates the surface of the semiconductor material, valence band electrons are transited to a surface state by absorbing a photon, or electrons of the surface state are transited to the surface state by absorbing a photon, so that free carriers are formed, and the admittance of the semiconductor material is changed. The surface state absorption is very weak compared with the band-to-band transition light absorption, and the light absorption of the semiconductor material to the sub-band gap wavelength is far smaller than the light absorption to the photon energy larger than the band gap of the semiconductor material.
A Photoelectric Detector (SSAPD) based on surface state absorption is a photoelectric detector based on SSA effect, and can realize power monitoring of optical signals in free space. The photosensitive region absorbs photons due to surface states at the incidence of light, generating electrons and holes, causing a change in the admittance of the photosensitive region. By adopting a signal reading circuit of transimpedance amplification and phase-locked demodulation, the tiny admittance variation can be measured, and thus the optical power of an incident optical signal is obtained. With time division multiplexed readout circuits, the four devices in a four quadrant detector can all be read out in the same readout mode.
Disclosure of Invention
The invention provides a silicon four-quadrant detector and a light beam positioning system working at a wavelength of more than 1.1 micrometer, which are applied to light beam positioning and light beam deflection angle measurement. The incident light changes the admittance of each quadrant photodetector through sub-bandgap light absorption, and this change in admittance is ultimately read out by a phase-locked readout circuit, described in detail below:
a silicon four-quadrant detector working at a wavelength greater than 1.1 micron, the origin O of the silicon four-quadrant detector is positioned at the center of a four-quadrant photodetector, and the x-axis and the y-axis are respectively parallel to the horizontal and vertical edges of a photosensitive area; the four photodetectors are separated by a blind zone of width d; the four photoelectric detectors are sequentially controlled by an external computer to be switched on and switched off; the silicon four-quadrant detector comprises a substrate, an oxide layer, four photosensitive areas and a titanium electrode.
The surface of the silicon four-quadrant detector has surface state absorption, and the photosensitive area enables four quadrants to generate different admittances under the action of incident light.
According to the formula
Calculating to obtain corresponding sigma x And σ y And comparing the position with the simulation result to finally obtain the incident position of the light beam; sigma x And σ y The relative magnitude relation of the received light power of the photosensitive areas along the x direction and the y direction, P 1 -P 4 The light power received by the four quadrant photosensitive areas is respectively.
Further, the preparation of the silicon four-quadrant detector comprises the following steps:
coating glue on an SOI substrate, utilizing ultraviolet to etch a gold electrode pattern, sputtering and depositing titanium, and removing redundant photoresist and metal by lifting in an organic solvent to process a titanium electrode;
then, glue is homogenized again, the photosensitive area is etched by ultraviolet light, and the photosensitive area is etched; and removing the photoresist in an organic solvent after the etching is finished, and finishing the whole processing flow.
A beam positioning system operating at a wavelength greater than 1.1 microns, the beam positioning system comprising: silicon four-quadrant detector still includes: a signal reading circuit, which is composed of a phase-locked amplifier and a trans-impedance amplifier,
when the switch is switched on, the phase-locked amplifier outputs a sinusoidal voltage signal with adjustable frequency and amplitude, and a current signal from the controlled photoelectric detector is amplified by the trans-impedance amplifier and demodulated and read by the phase-locked amplifier to obtain the admittance of a specific area;
and the light beams are positioned by comparing the relation of admittance variable quantities of the photosensitive areas of different quadrants along with the incident positions of the light spots.
Wherein the beam positioning system is used for measuring a deflection angle,
the continuous wave tunable laser emits light signals to the reflector through the collimator, the reflected light is converged through the lens and then parallelly emitted to the four-quadrant detector, the deflection angle of the reflector is converted into the displacement of parallel light beams on the photosensitive area, and the measurement of the deflection angle is realized through calculation and reverse deduction.
The technical scheme provided by the invention has the beneficial effects that:
1. the invention takes 1.55 micron wave band as an example, and can realize the application of light beam positioning tracking and light beam deflection angle measurement by monitoring the light current received by the photosensitive area of the four-quadrant photoelectric detector;
2. before the invention, the traditional silicon four-quadrant detector can only work below 1.1 micron wavelength, and the traditional III-V (such as InGaAs) four-quadrant detector can work in 1.55 micron communication waveband, but has the problems of high cost and incapability of being compatible with CMOS (complementary metal oxide semiconductor) process;
3. the silicon four-quadrant detector can simultaneously work in a visible light band and an infrared band with the wavelength larger than 1.1 micrometer based on the surface state absorption principle, widens the working spectral range of the silicon four-quadrant detector, has low cost and simple processing technology, is compatible with a CMOS (complementary metal oxide semiconductor) technology, and can be applied to the fields of light spot positioning, angle measurement and the like in a larger spectral range.
Drawings
FIG. 1 is a schematic diagram of a silicon four-quadrant photodetector structure and a photograph taken with an optical microscope:
wherein, (a) is a structural schematic diagram of the silicon four-quadrant photodetector, the origin O is positioned at the center of the four-quadrant photodetector, and the x-axis and the y-axis are respectively parallel to the horizontal and vertical edges of the photosensitive area. The four photodetectors are respectively marked as 1, 2, 3 and 4 according to the quadrant in which they are located, and are separated by a blind zone with the width d; (b) Is an optical micrograph of a silicon four-quadrant photodetector, the area of the photosensitive area of each quadrant photodetector is 11 μm × 9 μm, the width d of the dead zone between quadrants 2 and 3 and 4 of the photodetector is 11 μm, and the width of the dead zone between quadrants 1 and 2 and 1 and 4 of the photodetector is 13 μm.
FIG. 2 is a flow chart of a four quadrant photodetector process;
FIG. 3 is an apparatus schematic of the biasing and readout circuitry of a silicon quad-quadrant photodetector:
FIG. 4 is a schematic diagram of the basic features of a silicon quad-quadrant photodetector;
the method comprises the following steps that (a) two-dimensional mapping of superposition of admittance variation delta Y of a four-quadrant photoelectric detector is performed, a white dotted line is the outline of an electrode, and a black dotted line is the outline of a photosensitive area; (b) The relationship between the admittance variation of the photodetector in the first quadrant and the power of the incident light.
FIG. 5 is a schematic diagram comparing spot position measured at 1.55 micron and 0.78 micron wavelengths with actual position;
wherein (a) is at a wavelength of 1.55 μm, -30 μm. Ltoreq.x 0 Comparing the spot position in the range of' less than or equal to 30 mu m with the actual position; (b) At a wavelength of 1.55 microns, y is less than or equal to-30 mu m 0 Comparing the spot position in the range of' less than or equal to 30 mu m with the actual position; (c) At a wavelength of 0.78 μm, -25 μm. Ltoreq.x 0 Comparing the spot position in the range of' < 25 mu m with the actual position; (d) At a wavelength of 0.780 μm, y is less than or equal to-25 μm 0 Comparing the spot position in the range of' ≦ 25 μm with the actual position.
FIG. 6 is a schematic diagram of an apparatus for measuring a beam deflection angle of a silicon four-quadrant photodetector;
FIG. 7 is a schematic diagram of a comparison of a measurement of a beam deflection angle with an actual deflection angle;
wherein (a) is theta (theta) of-60' or less at a wavelength of 1.55 μm Yaw Comparing the measured yaw angle within the range of less than or equal to 60' with the actual angle; (b) At a wavelength of 1.55 microns, -75' theta or less Pitch Comparing the pitch angle measured in the range of less than or equal to 75' with the actual angle; (c) At a wavelength of 0.78 μm, -40 ≦ θ Yaw Of yaw angle measured in the range of ≦ 40' with respect to actual angleComparing; (d) At a wavelength of 0.78 μm, -60 ≦ θ Pitch Comparing the measured yaw angle with the actual angle within the range of less than or equal to 60'.
FIG. 8 shows the simulated and experimental σ x And σ y Schematic diagram of two-dimensional distribution result of (1).
Wherein (a) is simulated sigma x Two-dimensional distribution results; (b) Sigma obtained for simulation y Two-dimensional distribution results; (c) Sigma obtained for the experiment x Two-dimensional distribution results; (d) Sigma obtained for the experiment y And (5) two-dimensional distribution results.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in further detail below.
The first implementation mode comprises the following steps:
processing the four-quadrant detector:
the process flow of the four quadrant detector is shown in fig. 2. Firstly, glue is homogenized on an SOI substrate, gold electrode patterns are etched by ultraviolet light, titanium is sputtered and deposited, and redundant photoresist and metal are removed by lifting in an organic solvent to process a titanium electrode; then, glue is homogenized again, the photosensitive area is etched by ultraviolet light, and the photosensitive area is etched; and removing the photoresist in an organic solvent after the etching is finished, and finishing the whole processing flow.
The second embodiment:
when an optical signal is incident to the photosensitive surface of the four-quadrant detector, the admittance of the photosensitive area of the detector is changed by the surface state absorption effect; when the light signals are not uniformly distributed in the four quadrants of the photosensitive area, the Δ Y generated by different quadrants is different. Based on the properties of the silicon four-quadrant device, the positioning and deflection angle measurement of the light beam can be realized.
FIG. 1 is a schematic view of a device and a measuring apparatus. The phase-locked amplifier outputs a sinusoidal voltage signal with adjustable frequency, the signal is input by a titanium electrode at one end of the device after passing through a switch array, the signal is output by a titanium electrode at the other end of the device, the signal is amplified into a voltage signal by a trans-impedance amplifier (TIA) and then is introduced into the phase-locked amplifier, and the output signal is demodulated by the phase-locked amplifier to obtain the admittance of the device with a specific quadrant. By comparing the relative sizes of the admittance variation of the photosensitive areas of different quadrants, the relationship between the relative sizes of the admittance variation with the incident position of the light spot can be obtained, as shown in fig. 3.
The third embodiment is as follows:
positioning the light beam:
the relationship between the spot position and sigma can be obtained by simulating the incident spot position and the light power which can be received by each quadrant photosensitive area. And after the admittance variation quantity of the light spot at the specific position is obtained through measurement, the admittance variation quantities of the four quadrants are calculated to obtain corresponding sigma, and finally, the simulation result is compared with the sigma obtained through measurement to obtain the position of the light spot at the moment. By processing the result of scanning the photosensitive region, a relationship diagram between the measurement position and the actual position as shown in fig. 5 can be obtained.
The fourth implementation mode comprises the following steps:
measuring a deflection angle:
fig. 6 is a schematic diagram of a system for deflection angle measurement. The optical signal emitted by the continuous wave tunable laser passes through a collimator and then is incident into a reflector; the light reflected by the reflecting mirror is converged by the lens and then is emitted to the four-quadrant detector in parallel. Therefore, the deflection angle of the reflector is converted into the displacement of the parallel light beam on the four-quadrant detector, and the reflector deflection angle can be obtained by reverse deducing through the light beam positioning function of the four-quadrant detector. The resulting deflection angle measurement versus actual deflection angle is shown in fig. 7.
In the embodiment of the present invention, except for the specific description of the model of each device, the model of other devices is not limited, as long as the device can perform the above functions.
Those skilled in the art will appreciate that the drawings are only schematic illustrations of preferred embodiments, and the above-described embodiments of the present invention are merely provided for description and do not represent the merits of the embodiments.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the scope of the present invention, which is intended to cover any modifications, equivalents, improvements, etc. within the spirit and scope of the present invention.
Claims (6)
1. A silicon four-quadrant detector operating at wavelengths greater than 1.1 microns, wherein the origin O of the silicon four-quadrant detector is located at the center of the four-quadrant photodetector, and the x-axis and y-axis are parallel to the horizontal and vertical edges of the photosensitive area, respectively; the four photoelectric detectors are respectively positioned in four quadrants and are separated by a blind area with the width of d; the four photoelectric detectors are connected with an external circuit by four groups of corresponding gold electrodes; the four photoelectric detectors are sequentially controlled by an external computer to be switched on and switched off; the silicon four-quadrant detector comprises a substrate, an oxide layer, four photosensitive areas and a titanium electrode.
2. The silicon four-quadrant detector of claim 1, wherein the surface of the silicon four-quadrant detector has surface state absorption, and the photosensitive region is capable of generating different admittances for the four quadrants under the action of incident light.
3. A silicon four-quadrant detector operating at wavelengths greater than 1.1 microns according to claim 2, wherein the equation is based on
Calculating to obtain corresponding sigma x And σ y And comparing the position with the simulation result to finally obtain the incident position of the light beam; sigma x And σ y The relative magnitude relation of the received light power of the photosensitive areas along the x direction and the y direction, P 1 -P 4 The light power received by the four quadrant photosensitive areas is respectively.
4. A silicon four-quadrant detector operating at wavelengths greater than 1.1 microns according to claim 1, wherein the silicon four-quadrant detector is fabricated by:
spin coating the photoresist on the SOI substrate, utilizing ultraviolet to etch the gold electrode pattern, sputtering and depositing titanium, and removing the redundant photoresist and metal by lifting in an organic solvent to process a titanium electrode;
then, glue is homogenized again, and the photosensitive area is etched by using ultraviolet light; and removing the photoresist in an organic solvent after the etching is finished, and finishing the whole processing flow.
5. A beam positioning system operating at a wavelength greater than 1.1 microns, the beam positioning system comprising: the silicon four-quadrant detector of any of claims 1-4, further comprising: a signal reading circuit, which is composed of a phase-locked amplifier and a trans-impedance amplifier,
when the switch is switched on, the phase-locked amplifier outputs a sinusoidal voltage signal with adjustable frequency and amplitude, and a current signal from the controlled photoelectric detector is amplified by the trans-impedance amplifier and demodulated and read by the phase-locked amplifier to obtain the admittance of a specific area;
and the light beams are positioned by comparing the relation of admittance variable quantities of the photosensitive areas of different quadrants along with the incident positions of the light spots.
6. A beam positioning system operating at wavelengths greater than 1.1 microns in accordance with claim 5, wherein the beam positioning system is used for deflection angle measurements,
the continuous wave tunable laser emits light signals to the reflector through a collimator, the reflected light is converged by the lens and then parallelly emitted to the four-quadrant detector, the deflection angle of the reflector is converted into the displacement of parallel light beams on the photosensitive area, and the measurement of the deflection angle is realized through calculation and reverse deduction.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102155927A (en) * | 2011-03-22 | 2011-08-17 | 浙江大学 | Two-dimensional micro angle measuring device based on laser auto-collimation |
| CN102879108A (en) * | 2012-08-14 | 2013-01-16 | 中国科学院光电技术研究所 | Four-quadrant tracking sensor with light-splitting rectangular pyramid |
| CN110836634A (en) * | 2019-09-16 | 2020-02-25 | 南京理工大学 | Four-quadrant detector calibration method capable of adapting to various light beams |
| CN113140650A (en) * | 2021-04-06 | 2021-07-20 | 天津大学 | Vertical coupling transparent photoelectric detector based on surface state absorption principle |
-
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102155927A (en) * | 2011-03-22 | 2011-08-17 | 浙江大学 | Two-dimensional micro angle measuring device based on laser auto-collimation |
| CN102879108A (en) * | 2012-08-14 | 2013-01-16 | 中国科学院光电技术研究所 | Four-quadrant tracking sensor with light-splitting rectangular pyramid |
| CN110836634A (en) * | 2019-09-16 | 2020-02-25 | 南京理工大学 | Four-quadrant detector calibration method capable of adapting to various light beams |
| CN113140650A (en) * | 2021-04-06 | 2021-07-20 | 天津大学 | Vertical coupling transparent photoelectric detector based on surface state absorption principle |
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