CN115207152B - Silicon light in-situ detection and modulation integrated device and preparation method and application thereof - Google Patents

Silicon light in-situ detection and modulation integrated device and preparation method and application thereof Download PDF

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CN115207152B
CN115207152B CN202210682163.7A CN202210682163A CN115207152B CN 115207152 B CN115207152 B CN 115207152B CN 202210682163 A CN202210682163 A CN 202210682163A CN 115207152 B CN115207152 B CN 115207152B
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CN115207152A (en
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王钰言
孙嘉成
林珠
吴嘉敏
戴琼海
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Tsinghua University
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    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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    • G06N3/067—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using optical means
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Abstract

The invention discloses a silicon light in-situ detection and modulation integrated device, and a preparation method and application thereof. The device comprises: a substrate; a silicon waveguide disposed on a part of a surface of the substrate; the filling layer is arranged on the part of the surface of the substrate which is not covered by the silicon waveguide; the nano tungsten oxide material layer is arranged on one side of the silicon waveguide away from the substrate; the two-dimensional semiconductor material layer is arranged on one side of the nano tungsten oxide material layer, which is far away from the substrate; the first side electrode and the second side electrode are respectively arranged at two sides of the nano tungsten oxide material layer; the insulating layer is arranged on one side of the two-dimensional semiconductor material layer away from the substrate; and the top electrode is arranged on one side of the insulating layer far away from the substrate. The nano tungsten oxide material is combined with the two-dimensional semiconductor material and is then heterogeneous integrated with the silicon waveguide, so that nonlinear modulation of the amplitude of light transmitted in the waveguide can be realized while in-situ photoelectric detection is performed.

Description

Silicon light in-situ detection and modulation integrated device and preparation method and application thereof
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a silicon light in-situ detection and modulation integrated device, a preparation method and application thereof.
Background
The artificial intelligent optical computing chip based on the neural network algorithm is expected to break through the dilemma that the traditional electronic computing power and energy consumption can not meet the development of the information technology, and becomes an important development direction in the latter molar age. The nonlinear activation function plays an important role in realizing optical neural networks with high calculation power and complex application, and the deep exploration of an optical nonlinear realization method is a key of the current development of optical computing chips. Because of the lack of on-chip integrated optical nonlinear materials and devices, the existing optical neural network can only perform simple classification tasks and linear operations, and the functional implementation of the optical neural network for large-scale complex operations of artificial intelligence is greatly restricted. In addition, the traditional integrated photoelectric detector on the chip has larger volume and power consumption, and in the structural design of the optical calculation chip, the optical signal can be detected only at the calculated tail end, and real-time detection and feedback in the optical path calculation process can not be completed. Therefore, in-situ detection and nonlinear modulation of on-chip silicon optical signals still face a great challenge, and how to perform in-situ detection and modulation of optical signals on a silicon optical waveguide in an optical computing chip is a key scientific and technical problem to be solved in the research of on-chip integrated low-power-consumption nonlinear photoelectric devices.
Disclosure of Invention
In order to at least alleviate or solve at least one of the above-mentioned problems to a certain extent, an object of the present invention is to propose an integrated device for in-situ detection and modulation of silicon light, which is used for satisfying the urgent needs of in-situ detection and nonlinear modulation in the current artificial intelligence optical computing chip; another object of the present invention is to provide a method for manufacturing a silicon light in-situ detection and modulation integrated device.
In one aspect of the present invention, the present invention provides a silicon light in-situ detection and modulation integrated device, which includes: a substrate; a silicon waveguide disposed on a portion of a surface of the substrate; a filling layer disposed on a portion of a surface of the substrate not covered by the silicon waveguide, and a surface of the filling layer away from the substrate being flush with a surface of the silicon waveguide away from the substrate; the nano tungsten oxide material layer is arranged on one side of the silicon waveguide away from the substrate, and the orthographic projection of the nano tungsten oxide material layer on the substrate covers the orthographic projection of the silicon waveguide on the substrate; the two-dimensional semiconductor material layer is arranged on one side of the nano tungsten oxide material layer away from the substrate; a first side electrode and a second side electrode, wherein the first side electrode and the second side electrode are respectively arranged at two sides of the nano tungsten oxide material layer; an insulating layer disposed on a side of the two-dimensional semiconductor material layer remote from the substrate, the insulating layer covering at least a portion of surfaces of the two-dimensional semiconductor material layer, the first side electrode, and the second side electrode; and the top electrode is arranged on one side of the insulating layer far away from the substrate, and the orthographic projection of the top electrode on the substrate has no overlapping area with the orthographic projection of the first side electrode on the substrate and the orthographic projection of the second side electrode on the substrate. Therefore, the device combines the nano tungsten oxide material with the two-dimensional semiconductor material, so that the silicon light detection performance of the two-dimensional semiconductor material is remarkably improved, and the device is heterogenous with the silicon waveguide, so that nonlinear modulation of the amplitude of light transmitted in the waveguide can be realized while in-situ photoelectric detection is realized; and the nonlinear modulation of weak light can be realized, so that the energy consumption is reduced.
According to an embodiment of the invention, the nano tungsten oxide material layer fulfils at least one of the following conditions: the material of the nano tungsten oxide material layer is WO 3-x Nano material, wherein x is more than or equal to 0 and less than 1; said WO 3-x The nano material is a nano wire, the length of the nano wire is 50 nm-150 nm, and the width of the nano wire is 5 nm-20 nm; said WO 3-x The nano material is a quantum dot, and the diameter of the quantum dot is less than or equal to 10nm. Therefore, the nano tungsten oxide material layer has a better local surface plasma resonance effect, and is beneficial to further improving the performance of the device.
According to an embodiment of the invention, the width of the silicon waveguide is 300-600 nm, and the height of the silicon waveguide is 100-150 nm. Therefore, the silicon waveguide has a proper size, and can better regulate light, thereby being beneficial to improving the performance of the silicon light in-situ detection and modulation integrated device.
According to an embodiment of the present invention, the material of the two-dimensional semiconductor material layer includes black phosphorus and PdSe 2 、PdS 2 At least one of InSe and the optional thickness of the two-dimensional semiconductor material layer is 0.5 nm-20 nm. Therefore, the two-dimensional semiconductor material has good silicon light detection performance, and is beneficial to further improving the overall performance of the device.
According to an embodiment of the invention, the integrated silicon light in-situ detection and modulation device satisfies at least one of the following conditions: the first side electrode comprises a first sub-electrode layer and a second sub-electrode layer, the second sub-electrode layer is arranged on the surface of the first sub-electrode layer far away from the substrate, the first sub-electrode layer is made of chromium and has a thickness of 5-15 nm, and the second sub-electrode layer is made of gold and has a thickness of 40-80 nm; the second side electrode comprises a third sub-electrode layer and a fourth sub-electrode layer, the fourth sub-electrode layer is arranged on the surface of the third sub-electrode layer far away from the substrate, the third sub-electrode layer is made of chromium and has a thickness of 5-15 nm, and the fourth sub-electrode layer is made of gold and has a thickness of 40-80 nm; the top electrode comprises a fifth sub-electrode layer and a sixth sub-electrode layer, the sixth sub-electrode layer is arranged on the surface, far away from the substrate, of the fifth sub-electrode layer, the fifth sub-electrode layer is made of chromium and has a thickness of 5-10 nm, and the sixth sub-electrode layer is made of gold and has a thickness of 25-40 nm; the insulating layer is made of hexagonal boron nitride; the thickness of the insulating layer is 8 nm-20 nm. Thereby, it is advantageous to further improve the performance of the device.
In another aspect of the present invention, the present invention provides a method for preparing the integrated device for in-situ detection and modulation of silicon light, comprising: placing a nano tungsten oxide material on one side surface of the two-dimensional semiconductor material layer to obtain a nano tungsten oxide material layer; providing a substrate base material, and etching the substrate base material to obtain a substrate and a silicon waveguide; forming a filling layer in the etched area of the substrate, so that the surface of the filling layer away from the substrate is flush with the surface of the silicon waveguide away from the substrate; placing the two-dimensional semiconductor material layer on one side of the silicon waveguide away from the substrate, and placing the nano tungsten oxide material layer between the two-dimensional semiconductor material layer and the silicon waveguide; forming a first side electrode and a second side electrode on two sides of the nano tungsten oxide material layer respectively; forming an insulating layer on one side of the two-dimensional semiconductor material layer away from the substrate, wherein the insulating layer covers at least part of the surfaces of the two-dimensional semiconductor material layer, the first side electrode and the second side electrode; and forming a top electrode on one side of the insulating layer away from the substrate, wherein the orthographic projection of the top electrode on the substrate is not overlapped with the orthographic projection of the first side electrode on the substrate and the orthographic projection of the second side electrode on the substrate. Therefore, the silicon light in-situ detection and modulation integrated device prepared by the method has all the characteristics and advantages of the silicon light in-situ detection and modulation integrated device, and is not repeated herein; the method has the advantages of simple operation, strong controllability, good repeatability and high product yield.
According to an embodiment of the invention, the nano tungsten oxide material is prepared by a solvothermal method. The nano tungsten oxide material prepared by the solvothermal method is combined with the two-dimensional semiconductor material, so that the silicon light detection performance of the two-dimensional semiconductor material can be remarkably improved, and the overall performance of the silicon light in-situ detection and modulation integrated device is improved.
According to an embodiment of the invention, preparing the nano tungsten oxide material comprises the following steps: adding tungsten hexachloride into ethanol, and stirring to obtain a first mixture; placing the first mixture into a reaction kettle, and performing heat treatment at 150-200 ℃ for 10-15 h to obtain a second mixture; and taking supernatant in the second mixture, centrifuging the supernatant to obtain a precipitate, and drying to obtain the nano tungsten oxide material. The nano tungsten oxide material prepared by the steps has excellent local surface plasma resonance effect, and is combined with the two-dimensional semiconductor material layer, so that the silicon photodetection performance of the two-dimensional semiconductor material layer is further improved.
According to an embodiment of the invention, the two-dimensional semiconductor material layer is placed on the side of the silicon waveguide remote from the substrate by means of a fixed-point transfer. Therefore, the two-dimensional semiconductor material layer can be accurately placed on one side of the silicon waveguide away from the substrate by using a fixed-point transfer method, and the method is simple and convenient to operate and high in controllability.
In yet another aspect of the present invention, the present invention provides the use of the aforementioned integrated silicon light in situ detection and modulation device in an optical computing chip.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 shows a schematic structure of a silicon light in-situ detection and modulation integrated device according to an embodiment of the present invention;
FIG. 2 shows a flow chart of a method for fabricating a silicon light in situ detection and modulation integrated device according to one embodiment of the present invention;
fig. 3 shows a plot of photocurrent versus optical power for an integrated silicon optical in-situ detection and modulation device according to an embodiment of the present invention at different gate voltages.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In one aspect of the present invention, the present invention provides a silicon light in-situ detection and modulation integrated device, referring to fig. 1, which includes a substrate 100, a silicon waveguide 200, a filling layer 300, a nano tungsten oxide material layer 400, a two-dimensional semiconductor material layer 500, a first side electrode 600, a second side electrode 700, an insulating layer 800, and a top electrode 900.
According to an embodiment of the invention, the substrate 100 may comprise a silicon base layer and a silicon dioxide base layer, the silicon waveguide 200 being disposed on a side of the silicon dioxide base layer remote from the silicon base layer. Therefore, the substrate not only can provide good supporting effect for a layer structure formed on the substrate, but also is beneficial to improving the silicon light detection performance of the device. According to some embodiments of the invention, the thickness of the silica base layer may be 2 μm to 3 μm.
In an integrated silicon optical in-situ detection and modulation device according to some embodiments of the present invention, referring to fig. 1, a silicon waveguide 200 is disposed on a portion of the surface of a substrate 100. According to some embodiments of the present invention, the silicon waveguide 200 may be a rectangular silicon waveguide, the width of which may be 300nm to 600nm, wherein the width of the silicon waveguide may be 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, etc. as the side length in the X direction shown in fig. 1, the height of the silicon waveguide may be 100nm to 150nm, the height of the silicon waveguide may be 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, etc. as the side length in the Y direction shown in fig. 1. Therefore, the silicon waveguide has proper size and good light adjusting performance, and is further beneficial to improving the overall performance of the silicon light in-situ detection and modulation integrated device. The length of the silicon waveguide is the length of the side (not shown) of the silicon waveguide perpendicular to the XY plane, which is much larger than the width of the silicon waveguide.
According to an embodiment of the present invention, referring to fig. 1, the filling layer 300 is disposed on a portion of the surface of the substrate 100 not covered by the silicon waveguide 200, and the surface of the filling layer 300 away from the substrate 100 is flush with the surface of the silicon waveguide 200 away from the substrate 100, thereby facilitating subsequent formation of a planar layer structure on the side of the silicon waveguide away from the substrate.
According to some embodiments of the present invention, the material of the filling layer 300 is silicon dioxide, so that the filling layer and the silicon waveguide cooperate to better regulate light. It will be appreciated by those skilled in the art that the thickness of the filler layer may be consistent with the height of the silicon waveguide, thereby allowing the surface of the filler layer remote from the substrate to remain flush with the surface of the silicon waveguide remote from the substrate.
According to the embodiment of the invention, as shown in fig. 1, the nano tungsten oxide material layer 400 is disposed on one side of the silicon waveguide 200 far from the substrate 100, and the orthographic projection of the nano tungsten oxide material layer 400 on the substrate 100 covers the orthographic projection of the silicon waveguide 200 on the substrate 100, the two-dimensional semiconductor material layer 500 is disposed on one side of the nano tungsten oxide material layer 400 far from the substrate 100, and the orthographic projection of the two-dimensional semiconductor material layer 500 on the substrate 100 also covers the orthographic projection of the silicon waveguide 200 on the substrate 100, so that a better silicon light detection effect can be achieved by combining the two-dimensional semiconductor material layer with the nano tungsten oxide material layer, specifically, the carrier concentration of the two-dimensional semiconductor material layer and the local surface plasmon resonance effect of the nano tungsten oxide material layer can be regulated by changing the voltage of the top electrode, and the light absorption intensity and the corresponding saturation absorption threshold of the two-dimensional semiconductor material layer are changed, thereby realizing nonlinear modulation of the light signal amplitude in the silicon waveguide.
According to some embodiments of the present invention, the nano tungsten oxide material layer 400 is made of WO 3-x The nano material is more than or equal to 0 and less than or equal to 1, so that the voltage of the top electrode can be changed to regulate and control the local surface plasmon resonance of the nano tungsten oxide material layer, and further the silicon light detection and regulation effect of the silicon light in-situ detection and modulation integrated device is improved.
According to some embodiments of the invention, WO 3-x The nanomaterial may be a nanowire having a length of 50nm to 150nm, for example, 50nm, 60nm, 80nm, 100nm, 120nm, 130nm, 150nm, etc., and the nanowire may be 5nm to 20nm wide (i.e., the diameter of the nanowire), for example, 5nm, 7nm, 10nm, 12nm, 15nm, 17nm, 20nm, etc. According to further embodiments of the invention, WO 3-x The nanomaterial may be quantum dots having a diameter of 10nm or less, for example, the quantum dots may have a diameter of 2nm, 3nm, 5nm, 8nm, 10nm, or the like. WO (WO) 3-x The nano material is a nanowire or a quantum dot, and the local surface of the nano tungsten oxide material layer can generate plasma resonance through voltage regulation, so that the silicon light detection and modulation effect of the silicon light in-situ detection and modulation integrated device is improved.
According to an embodiment of the present invention, the two-dimensional semiconductor material layer 500 may comprise black phosphorus, pdSe 2 、PdS 2 At least one of InSe, specifically, the two-dimensional semiconductor material layer 500 can be made of black phosphorus or PdSe 2 、PdS 2 Or InSe, the two-dimensional semiconductor material layer 500 can also be made of black phosphorus, pdSe 2 、PdS 2 And two or more of InSe. The materials are all narrow band gap semiconductor materials, have good silicon light detection performance, and are adopted to form a two-dimensional semiconductorThe material layer is beneficial to further improving the performance of the silicon light in-situ detection and modulation integrated device.
According to some embodiments of the present invention, the thickness of the two-dimensional semiconductor material layer 500 may be 0.5nm to 20nm, for example, may be 0.5nm, 1nm, 5nm, 8nm, 10nm, 12nm, 15nm, 20nm, etc., so that the two-dimensional semiconductor material layer has a suitable thickness, which is beneficial to further improving the performance of the integrated device for in-situ detection and modulation of silicon light, and the thickness of the layer is thinner, which is beneficial to the light and thin reduction of the device.
According to the embodiment of the present invention, referring to fig. 1, the first side electrode 600 and the second side electrode 700 are respectively disposed at two sides of the nano tungsten oxide material layer 400, as can be seen from fig. 1, the first side electrode 600 and the second side electrode 700 are also respectively disposed at two sides of the two-dimensional semiconductor material layer 500, the first side electrode and the second side electrode are respectively used as a source electrode and a drain electrode of the device, a current signal can be obtained through the two side electrodes, the current signal intensity is used as a feedback signal, and the feedback signal is introduced into an optical neural network for calculation and training, so that an optical signal amplitude which needs to be modulated online can be obtained, and nonlinear modulation of silicon light can be realized in combination with voltage adjustment.
According to some embodiments of the present invention, the first side electrode 600 may include a first sub-electrode layer and a second sub-electrode layer, wherein the second sub-electrode layer is disposed on a surface of the first sub-electrode layer away from the substrate, the first sub-electrode layer is made of chromium and has a thickness of 5nm to 15nm, and the second sub-electrode layer is made of gold and has a thickness of 40nm to 80nm, so that the first side electrode has good conductivity, and the chromium electrode layer may improve the bonding performance between the first side electrode and the filling layer, thereby being beneficial to improving the silicon photodetection and modulation performance of the device and the overall stability of the device.
According to an embodiment of the present invention, the second side electrode 700 may include a third sub-electrode layer and a fourth sub-electrode layer, where the fourth sub-electrode layer is disposed on a surface of the third sub-electrode layer away from the substrate, the third sub-electrode layer is made of chromium and has a thickness of 5nm to 15nm, and the fourth sub-electrode layer is made of gold and has a thickness of 40nm to 80nm, so that the second side electrode also has good conductivity, and the chromium electrode layer can improve the bonding performance between the second side electrode and the filling layer, thereby further being beneficial to further improving the silicon light detection modulation performance of the device and the overall stability of the device.
According to the embodiment of the invention, referring to fig. 1, the insulating layer 800 is disposed on one side of the two-dimensional semiconductor material layer 500 away from the substrate 100, and the insulating layer 800 covers at least part of the surfaces of the two-dimensional semiconductor material layer 500, the first side electrode 600 and the second side electrode 700, as shown in fig. 1, the insulating layer 800 may cover the surfaces of the two-dimensional semiconductor material layer 500, the first side electrode 600 and the second side electrode 700 away from the substrate 100, thereby the insulating layer may have a good protection effect on the two-dimensional semiconductor material layer, and adverse effects caused by contact of air with the two-dimensional semiconductor material layer are avoided; the insulating layer can also be used as a top electrode dielectric layer so as to regulate and control the local surface plasmon resonance of the nano tungsten oxide material layer.
According to an embodiment of the present invention, the material of the insulating layer 800 may be hexagonal boron nitride, and the thickness of the insulating layer 800 may be 8nm to 20nm. Thereby, it is advantageous to further improve the performance of the device.
According to an embodiment of the present invention, referring to fig. 1, the top electrode 900 is disposed on a side of the insulating layer 800 away from the substrate 100, and there is no overlapping area between the front projection of the top electrode 900 on the substrate 100 and the front projection of the first side electrode 600 on the substrate 100 and the front projection of the second side electrode 700 on the substrate 100.
According to some embodiments of the present invention, the top electrode 900 may include a fifth sub-electrode layer and a sixth sub-electrode layer, where the sixth sub-electrode layer is disposed on a surface of the fifth sub-electrode layer away from the substrate, the fifth sub-electrode layer is made of chromium and has a thickness of 5nm to 10nm, and the sixth sub-electrode layer is made of gold and has a thickness of 25nm to 40nm, so that the top electrode has good conductivity, and the fifth sub-electrode layer is disposed to facilitate improvement of bonding strength between the top electrode and the insulating layer, and further facilitate improvement of silicon photodetection and modulation performance of the device, and overall stability of the device.
The working mechanism of the silicon light in-situ detection and modulation integrated device provided by the invention for realizing in-situ photoelectric detection and modulation is described as follows: combining a two-dimensional semiconductor material with a nano tungsten oxide material, carrying out heterogeneous integration with a silicon optical waveguide, detecting the amplitude of an optical signal in the silicon optical waveguide in real time through coupling with the silicon optical waveguide, and reading the photocurrent of a pair of side electrodes in a silicon optical in-situ detection and modulation integrated device; taking the photocurrent intensity as a feedback signal, introducing the feedback signal into an optical neural network for calculation and training, and further obtaining the optical signal amplitude needing on-line modulation; further, the carrier concentration in the two-dimensional semiconductor material layer and the local surface plasmon resonance effect of the nano tungsten oxide material are regulated and controlled by changing the voltage of the top electrode, and the light absorption intensity and the corresponding saturation absorption threshold value of the two-dimensional semiconductor material layer are changed, so that nonlinear modulation of the light signal amplitude in the silicon waveguide is realized; the photocurrent signal can be updated in real time by continuously adjusting the grid voltage (the voltage of the top electrode) in real time, and the silicon light in-situ detection and modulation and real-time training updating are realized by establishing a circulating coupling mechanism of the grid voltage and the top electrode and combining with optical neural network calculation.
In general, the silicon light in-situ detection and modulation integrated device provided by the invention has the following advantages: (1) The nano tungsten oxide material and the two-dimensional semiconductor material are compounded, and the silicon light detection performance of the two-dimensional semiconductor material is greatly improved by utilizing the local surface plasma resonance effect of the nano tungsten oxide material; (2) The device has nonlinear saturated absorption characteristic for silicon light with the wavelength of 1100 nm-2000 nm, and can realize nonlinear modulation of the amplitude of light transmitted in the waveguide while in-situ photoelectric detection; (3) The saturated absorption threshold is low, so that weak light nonlinear modulation with the magnitude lower than mW (milliwatt) can be realized, and the energy consumption of the optical computing chip is greatly reduced; (4) The two-dimensional semiconductor material and the nano tungsten oxide material are combined and then are heterointegrated with the silicon waveguide, so that the method can be applied to an artificial intelligent optical computing chip, in-situ detection and modulation in the optical propagation and computing process are realized, and the method has the advantage of high-density integration.
In another aspect of the present invention, the present invention provides a method for preparing the integrated device for in-situ detection and modulation of silicon light, referring to fig. 2, the method for preparing the integrated device for in-situ detection and modulation of silicon light comprises the following steps:
S100: a nano tungsten oxide material is disposed on a side surface of the two-dimensional semiconductor material layer.
In the step, the nano tungsten oxide material is placed on one side surface of the two-dimensional semiconductor material layer, so that the nano tungsten oxide material layer is obtained, namely, the nano tungsten oxide material layer is combined with the two-dimensional semiconductor material layer.
According to the embodiment of the invention, the two-dimensional semiconductor material layer is firstly transferred to the surface of the flexible substrate Polydimethylsiloxane (PDMS), the nano tungsten oxide material is dissolved in ethanol and is put into an ultrasonic machine for ultrasonic treatment for 12-24 hours, a small amount of supernatant is taken by a dropper and is dripped on the two-dimensional semiconductor material layer on the surface of the PDMS, and the two-dimensional semiconductor material layer is dried by a nitrogen gun to form the nano tungsten oxide material layer.
According to some embodiments of the present invention, the operation of transferring a two-dimensional layer of semiconductor material onto the surface of a flexible substrate polydimethylsiloxane is as follows: a high-phase bulk (bulk semiconductor material, high phase meaning having a uniform crystal orientation for the phase structure) is transferred to a scotch tape using a mechanical lift-off method, the tape is repeatedly folded in half, and then PDMS is adhered to the tape and adsorbed to a two-dimensional semiconductor material.
According to some embodiments of the present invention, the specific process of dissolving nano tungsten oxide material in ethanol is as follows: the weight of the nano tungsten oxide material is 2 mg-10 mg (WO 3-X ) And placed in 10ml of ethanol and magnetically stirred at 80 ℃ until all dissolved. According to some embodiments of the invention, after dissolving the nano tungsten oxide material in ethanol, the solution is placed into an ultrasonic machine for ultrasonic treatment for 12-24 hours, wherein the power of the ultrasonic treatment can be 50-100W, and the frequency of the ultrasonic treatment can be 20-50 Khz.
According to an embodiment of the present invention, the nano tungsten oxide material may be prepared by a solvothermal method. According to some embodiments of the present invention, preparing a nano tungsten oxide material may include the steps of: adding tungsten hexachloride into ethanol, and stirring to obtain a first mixture; placing the first mixture into a reaction kettle, and performing heat treatment at 150-200 ℃ for 10-15 h to obtain a second mixture; and taking supernatant in the second mixture, centrifuging the supernatant to obtain a precipitate, and drying to obtain the nano tungsten oxide material. The nano tungsten oxide material prepared by the method has excellent performance, and the silicon photodetection performance of the two-dimensional semiconductor material can be obviously improved by combining the nano tungsten oxide material with the two-dimensional semiconductor material; in addition, the reaction does not need to add a surfactant, and the reaction system does not pollute the environment.
According to some specific embodiments of the invention, 40 mg-80 mg of tungsten hexachloride can be added into 8 mL-15 mL of ethanol, after being fully stirred for 5 mL-15 min, the transparent golden yellow solution is transferred into a stainless steel autoclave with polytetrafluoroethylene lining, and the precursor is subjected to solvothermal treatment for 10 h-15 h at 150-200 ℃; after the reaction is finished, cooling the reaction system to room temperature to obtain a clear solution with sky blue sediment, centrifuging the supernatant for 10-20 min by using a centrifuge at the rotation speed of 10000-12000 rpm, taking out the sediment, washing the sediment with alcohol for several times, and freeze-drying the washed sediment at-40-50 ℃ for 24-36 hours to obtain the nano tungsten oxide material.
The material and thickness of the two-dimensional semiconductor material layer, the chemical formula of the nano tungsten oxide material, the microstructure, the size and other features are described in detail above, and will not be described again here.
S200: and providing a substrate base material, and etching the substrate base material to obtain the substrate and the silicon waveguide.
In this step, a substrate base material is provided, and the substrate base material is etched to obtain the substrate 100 and the silicon waveguide 200.
According to an embodiment of the present invention, the substrate base material may be SOI (silicon on insulator ), i.e. the substrate base material having a silicon base layer at the bottom and top, a silicon dioxide base layer in the middle, the thickness of the top silicon base layer may be 100nm to 150nm, and the thickness of the middle silicon dioxide base layer may be 2 μm to 3 μm.
According to some embodiments of the invention, the substrate base material is subjected toThe etching steps are as follows: firstly, uniformly coating electron beam photoresist with the model of ARN7520.17 on the surface of a substrate (the surface of a top silicon substrate), wherein the rotating speed of spin coating can be set to 3000 r/min-5000 r/min, the spin coating time is set to 60 s-80 s, and then, placing a substrate sample after spin coating of the electron beam photoresist on a photoresist baking table for baking, wherein the baking temperature is set to 60-120 ℃ and the baking time is set to 1 min-2 min; patterning the top silicon substrate layer by using an electron beam exposure method, wherein the pattern width is 300-600 nm, and the electron exposure metering is set to be 18nC/cm 2 ～40nC/cm 2 The size of the electron beam is adjusted to be in the range of 50 pA-150 pA; immersing the sample after patterning treatment in AR300-47 developing solution for 100-120 s for developing, and then immersing the developed sample in isopropanol for 30-60 s to wash out the developing solution on the surface; deep silicon etching is carried out on the SOI substrate base material by adopting an Inductively Coupled Plasma (ICP) etching method, wherein the etching power is 70W-90W and C 4 F 8 And SF (sulfur hexafluoride) 6 The gas flow rates are respectively 30 sccm-50 sccm and 50 sccm-100 sccm, the etching time is 20 s-30 s, and according to the difference of pattern width and etching depth of electron beam exposure design, rectangular silicon waveguides with the width of 300 nm-600 nm and the height of 100 nm-150 nm can be obtained, and the unetched bottom silicon substrate layer and the middle silicon dioxide substrate layer form a substrate in the silicon light in-situ detection and modulation integrated device.
S300: and forming a filling layer in the etched area of the substrate base material.
After the substrate and the silicon waveguide are obtained, a filling layer is formed in the etched area of the substrate base material, and the surface of the filling layer away from the substrate is flush with the surface of the silicon waveguide away from the substrate.
According to some embodiments of the present invention, after the substrate and silicon waveguide are obtained, an electron beam evaporation method may be used to deposit SiO with a thickness of 100nm to 150nm in the etched region of the substrate base material 2 Obtaining a filling layer, wherein the residual electron photoresist is used as a mask to avoid covering the silicon waveguide surface with silicon dioxide, and then immersing the device sample with the filling layer into acetone solution and removing by ultrasonic bathRemoving electron beam photoresist, and annealing at 1000-1200 deg.C for 1-2 min to deposit SiO 2 The layer (filling layer) levels off, the surface of the filling layer remote from the substrate and the surface of the silicon waveguide remote from the substrate being flush.
S400: a layer of two-dimensional semiconductor material is disposed on a side of the silicon waveguide remote from the substrate.
After the fill layer is formed, a layer of two-dimensional semiconductor material is disposed on a side of the silicon waveguide remote from the substrate, and a layer of nano tungsten oxide material is disposed between the layer of two-dimensional semiconductor material and the silicon waveguide.
According to some embodiments of the invention, the layer of two-dimensional semiconductor material is disposed on a side of the silicon waveguide remote from the substrate by a site-directed transfer process. Therefore, the composite structure of the two-dimensional semiconductor material layer and the nano tungsten oxide material layer can be heterointegrated with the silicon waveguide by using a fixed-point transfer method, the method is high in controllability, the two-dimensional semiconductor material layer can be accurately placed on one side of the silicon waveguide far away from the substrate, and the orthographic projection of the two-dimensional semiconductor material layer on the substrate covers the orthographic projection of the silicon waveguide on the substrate.
According to some embodiments of the present invention, the specific steps of placing a two-dimensional semiconductor material layer on a side of a silicon waveguide remote from a substrate are as follows: and (3) moving the PDMS by utilizing a microscope in the fixed-point transfer operation system to enable the two-dimensional semiconductor material layer attached with the nano tungsten oxide material layer to correspond to the silicon waveguide, slowly downwards moving the PDMS to enable the nano tungsten oxide material layer to be attached with the silicon waveguide, and raising the temperature of the sample stage to 35-70 ℃ to enable the material on the PDMS to fall on the silicon waveguide.
S500: and forming a first side electrode and a second side electrode on two sides of the nano tungsten oxide material layer respectively.
According to an embodiment of the present invention, after a two-dimensional semiconductor material layer is disposed on a side of a silicon waveguide away from a substrate, a first side electrode and a second side electrode are formed on both sides of a nano tungsten oxide material layer, respectively.
According to some embodiments of the present invention, the edge region of the surface of the filler layer remote from the substrate may be located before the two-dimensional semiconductor material layer is located on the side of the silicon waveguide remote from the substrateThe domains form an overlay mark for subsequent formation of the first side electrode and the second side electrode. According to some embodiments of the present invention, the overlay mark may be formed by an optical exposure method, which is specifically described as follows: placing a device sample with a filling layer in the center of a tray of a spin coater, pressing a suction key, setting the rotating speed to be 3000 r/min-5000 r/min, setting the spin coating time to be 20 s-40 s, dripping the model 3000py photoresist on the surface of the device sample, pressing a start key, uniformly coating the photoresist on the surface of the device sample, and then placing the device sample after spin coating the photoresist on a photoresist baking table for baking, wherein the baking temperature is set to be 60-120 ℃ and the baking time is set to be 1-2 min; then, the exposure treatment is carried out to adjust the ultraviolet intensity to 3.0 mu W/cm 2 ～4.2μW/cm 2 The exposure time is set to be 40 s-50 s, and the device sample after exposure treatment is placed on a glue baking table for baking, wherein the baking temperature is set to be 60-120 ℃, and the baking time is set to be 1-2 min; then, placing the device sample in RD-6 developer solution, soaking for 60-120 s, and then soaking in deionized water for 30-60 s to wash out the developer solution on the surface; the device obtained after exposure treatment is put into a thermal evaporation or electron beam high vacuum coating cavity, a metal block with the purity of 99.99 percent is bombarded by electron beams in an evaporation coating machine to reach the evaporation temperature, an overlay mark is formed by deposition in the edge area of the surface of a filling layer principle substrate, and the deposition speed of a film is that
Figure BDA0003696694660000101
The overlay mark comprises metallic titanium with the thickness of 5-15 nm and metallic gold with the thickness of 40-80 nm, and the metallic titanium is stripped, wherein the metallic gold is arranged on the surface of the metallic titanium far away from the substrate.
After the two-dimensional semiconductor material layer is placed on the side of the silicon waveguide away from the substrate, a first side electrode and a second side electrode are respectively formed on two sides of the nano tungsten oxide material layer, and according to some embodiments of the present invention, the specific operation steps for forming the first side electrode and the second side electrode are as follows: placing the device sample in the center of a tray of a spin coater, pressing a suction key, and setting the rotating speed to be 3000-5000 r/min The spin coating time is set to be 20-40 s, an electron beam positive photoresist with the model of ARP679.04 is dripped on the surface of a device sample, a start key is pressed, a layer of polymethyl methacrylate (PMMA) is uniformly spin-coated on the surface of the device sample, the device sample after spin-coating of PMMA is placed on a photoresist baking table for baking, wherein the baking temperature is set to be 90-200 ℃, and the baking time is set to be 2-3 min; a pair of side electrode patterns was formed by using an electron beam exposure method, specifically, the electron exposure dose was set to 260nC/cm by a nanopattern generation system 2 ～280nC/cm 2 The electron beam size is adjusted to be in the range of 50 pA-150 pA, and a pair of side electrode patterns are formed by exposure; then, placing the device sample into AR300-56 developing solution, soaking for 90-150 s, soaking for 30-60 s in isopropanol, and washing off the developing solution on the surface; and forming a first side electrode and a second side electrode on two sides of the nano tungsten oxide material layer respectively by utilizing a high vacuum electron beam evaporation coating method, wherein the first side electrode and the second side electrode can comprise metal chromium with the thickness of 5 nm-15 nm and metal gold with the thickness of 40 nm-80 nm, and the metal gold is arranged on the surface of the metal chromium far away from the substrate.
S600: an insulating layer is formed on a side of the two-dimensional semiconductor material layer remote from the substrate.
After the first side electrode and the second side electrode are formed, an insulating layer is formed on a side of the two-dimensional semiconductor material layer away from the substrate, wherein the insulating layer covers at least part of surfaces of the two-dimensional semiconductor material layer, the first side electrode and the second side electrode. According to some embodiments of the present invention, referring to fig. 1, an insulating layer 800 may cover a surface of the two-dimensional semiconductor material layer 500 away from the substrate 100, a surface of the first side electrode 600 away from the substrate 100, and a surface of the second side electrode 700 away from the substrate 100.
According to some embodiments of the present invention, insulating layer 800 may be formed by a fixed-point transfer system that transfers insulating layer material to a side of a two-dimensional semiconductor material layer that is remote from a substrate. The material and thickness of the insulating layer are described above, and will not be described in detail herein.
S700: a top electrode is formed on a side of the insulating layer remote from the substrate.
After the insulating layer 800 is formed, the top electrode 900 is formed on a side of the insulating layer 800 away from the substrate 100, and referring to fig. 1, there is no overlapping area between the front projection of the top electrode 900 on the substrate 100 and the front projection of the first side electrode 600 on the substrate 100 and the front projection of the second side electrode 700 on the substrate 100.
According to some embodiments of the present invention, the step of forming the top electrode 900 includes: spin coating a layer of polymethyl methacrylate (PMMA) on the surface of a device sample, and then drying; making a top electrode pattern at a position where the insulating layer 800 overlaps the two-dimensional semiconductor material layer 500 by using an electron beam exposure method, and developing and fixing the exposed sample; finally, a top electrode 900 is deposited on the side of the insulating layer far from the substrate by utilizing an evaporation coating mode, wherein the top electrode 900 can comprise metal chromium with the thickness of 5-10 nm and metal gold with the thickness of 25-40 nm, and the metal gold is arranged on the surface of the metal chromium far from the substrate.
The silicon light in-situ detection and modulation integrated device prepared by the method provided by the invention has all the characteristics and advantages of the silicon light in-situ detection and modulation integrated device, and is not described in detail herein; the method has the advantages of no need of complicated preparation process, simple operation, strong controllability and good repeatability, and is beneficial to improving the yield of products.
The silicon light in-situ detection and modulation integrated device provided by the invention can be applied to an optical calculation chip, and can realize in-situ detection and modulation in the optical transmission and calculation process.
The invention is illustrated below by means of specific examples, which are given for illustrative purposes only and do not limit the scope of the invention in any way, as will be understood by those skilled in the art. In addition, in the examples below, materials and equipment used are commercially available unless otherwise specified. If in the following examples specific treatment conditions and treatment methods are not explicitly described, the treatment may be performed using conditions and methods well known in the art.
Example 1
(1) Obtaining black with thickness of 4nm by mechanical stripping methodPhosphorus, black phosphorus was adsorbed using Gel Pak PDMS and attached to a glass slide; WO with a length of 100nm and a width of 5nm is prepared by a surfactant-free solvothermal method 3-X Nanowire, 1mg of WO 3-X Dissolving nanowire powder in 10ml of ethanol, putting the solution into an ultrasonic machine for ultrasonic treatment for 24 hours, taking a small amount of supernatant by using a dropper, dripping the supernatant onto the surface of PDMS (polydimethylsiloxane) with black phosphorus, and drying the supernatant by using a nitrogen gun to obtain the black phosphorus (two-dimensional semiconductor material layer) and the nano tungsten oxide material layer.
(2) Providing a substrate base material, wherein the substrate base material comprises a bottom silicon substrate layer, a middle silicon dioxide base layer (thickness is 2 mu m) and a top silicon substrate layer (thickness is 100 nm), placing the substrate base material in a tray of a spin coater, pressing a suction key, setting the rotating speed of spin coating to 4000r/min, setting the spin coating time to 30s, dripping an electron beam negative adhesive with the model of ARN7520.17 on the surface of the substrate base material (the surface of the top silicon substrate layer), pressing a start key, uniformly coating the electron beam negative adhesive on the surface of the substrate base material, and then placing a sample on a glue drying table for baking for 1min at the temperature of 85 ℃; then, a JSM-6460LV scanning electron microscope is matched with a nano pattern imaging system (adopting an electron beam exposure method) to carry out patterning treatment on the top silicon substrate, the pattern width is 500nm, and the used electron exposure dose is set to be 35nC/cm 2 The electron beam size is adjusted to 100pA; immersing the sample after patterning treatment in AR300-47 developing solution for 120s for developing, and then immersing in deionized water for 30s for fixing; deep silicon etching is carried out on the substrate base material by using an ICP etching machine with the model of ICP 550-F in Aifa, and the etching power is 80W and C 4 F 8 And SF (sulfur hexafluoride) 6 The gas flow rates are 50sccm and 100sccm respectively, the etching time is 25s, the rectangular silicon waveguide with the width of 500nm and the height of 100nm is obtained, and the unetched bottom silicon substrate layer and the middle silicon dioxide substrate layer form the substrate in the device.
(3) Deposition of SiO 100nm thick on etched area of substrate base material by electron beam evaporation 2 Obtaining a filling layer, using the remaining electron photoresist as a mask, immersing the device sample with the filling layer formed therein in an acetone solution, removing the electron beam photoresist by using an ultrasonic bath, and performing annealing at 1000deg.C for 2minFire treatment to deposit SiO 2 And (5) leveling the layer.
(4) After a filling layer is formed, placing a device sample into a spin coating machine for spin coating operation, pressing a suction key, setting the rotating speed to 4500r/min, setting the spin coating time to 35s, dripping 3000py photoresist on the surface of the device, pressing a start key, uniformly coating the photoresist on the surface of the device, and then placing the device sample on a glue baking table for baking at the temperature of 95 ℃ for 2min; then, the device is subjected to optical exposure by an ultraviolet exposure machine, and the ultraviolet intensity is adjusted to 3.5 mu W/cm 2 Setting the exposure time to be 42s, and placing the device sample on a glue baking table for baking after the exposure is finished, wherein the baking temperature is 95 ℃ and the baking time is 2min; then, immersing the device sample in the developing solution RD-6 for 50s, immersing in deionized water for 30s for fixing, and washing off the developing solution on the surface; the device obtained after exposure treatment is put into an electron beam high vacuum coating cavity, and the method of adopting electron beam evaporation coating is superior to 10 -9 Forming an overlay mark on the device in the cavity environment of the support, wherein the overlay mark comprises metal titanium with the thickness of 10nm and metal gold with the thickness of 50nm, stripping the device by using acetone solution (removing redundant parts), cleaning the surface of the device by using ethanol, and drying by using a nitrogen gun; then, WO is attached by using a Michaer photoelectric company E1-G metallographic microscopic site-specific transfer system 3-X The black phosphorus of the nanowire is subjected to fixed point transfer operation, and PDMS is slowly moved downwards to enable WO 3-X The nanowires are attached to the silicon waveguide, and the temperature of the sample stage is raised to 40 ℃ so that the material on the PDMS falls on the silicon waveguide.
(5) Continuously coating a PMMA electron beam adhesive with the model of ARP679.04 on a device sample with an overlay mark, spin-coating for 1min at the rotating speed of 3600r/min, and then placing the device sample on a glue drying table for 2min at 180 ℃; then the JSM-6460LV scanning electron microscope is matched with the nano pattern imaging system to expose the materials at the two ends of the black phosphor (electron beam exposure), and the dosage of the electron beam exposure is 265nC/cm 2 The electron beam current is 110pA, and a pair of side electrode patterns are formed by exposure; after the exposure is finished, the device sample is taken out from the SEM cavity and is developed by developing solution 85s with the model AR600-56 to be black Exposing the material at the two ends of the phosphorus; the high vacuum electron beam evaporation coating method is better than 10 -9 And coating films are carried out on two ends of the exposed material in the cavity environment of the support to form a first side electrode and a second side electrode, wherein the first side electrode and the second side electrode both comprise chromium with the thickness of 10nm and gold with the thickness of 40 nm.
(6) And utilizing a fixed-point transfer system to transfer the hexagonal boron nitride material with the thickness of 20nm on the device at fixed points to serve as an insulating layer.
(7) Spin-coating a layer of polymethyl methacrylate (PMMA) on the surface of a device sample, then drying, making a top electrode pattern at the overlapping position of the insulating layer and black phosphorus (a two-dimensional semiconductor material layer) by using an electron beam exposure method, and developing and fixing the exposed sample; and finally, depositing a top electrode on one side of the insulating layer far away from the substrate by utilizing an evaporation coating mode, wherein the top electrode comprises metal chromium with the thickness of 5nm and metal gold with the thickness of 25nm, and stripping the metal chromium with the thickness of 25nm to obtain a silicon light in-situ detection and modulation integrated device sample.
The silicon light in-situ detection and modulation integrated device sample obtained in example 1 was tested, the test results are shown in FIG. 3, wherein I ph Is photocurrent, V g 1、V g 2、V g 3、V g 4、V g 5 are respectively the top electrode voltage V g 1、V g 2、V g 3、V g 4、V g 5, wherein V g 1＜V g 2＜V g 3＜V g 4＜V g 5. As can be seen from fig. 3, under a certain optical power condition, the larger the top electrode voltage, the larger the photocurrent; the greater the top electrode voltage, the greater the corresponding optical power when the photocurrent is saturated. It follows that the device is capable of non-linear modulation of the amplitude of light in a silicon waveguide while achieving in-situ photodetection.
In the description of the present invention, the azimuth or positional relationship indicated by the terms "upper", "lower", etc. are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience of describing the present invention and do not require that the present invention must be constructed and operated in a specific azimuth, and thus should not be construed as limiting the present invention.
In the description of the present specification, reference is made to the terms "one embodiment," "another embodiment," "some embodiments," "other embodiments," "some particular embodiments," etc., meaning that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction. In addition, it should be noted that, in the present specification, the terms "first", "second", "third", "fourth", "fifth" and "sixth" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.

Claims (9)

1. A silicon light in situ detection and modulation integrated device, comprising:
a substrate;
the silicon waveguide is arranged on part of the surface of the substrate, the width of the silicon waveguide is 300-600 nm, and the height of the silicon waveguide is 100-150 nm;
a filling layer disposed on a portion of a surface of the substrate not covered by the silicon waveguide, and a surface of the filling layer away from the substrate being flush with a surface of the silicon waveguide away from the substrate;
the nano tungsten oxide material layer is arranged on one side of the silicon waveguide away from the substrate, and the orthographic projection of the nano tungsten oxide material layer on the substrate covers the orthographic projection of the silicon waveguide on the substrate;
the two-dimensional semiconductor material layer is arranged on one side of the nano tungsten oxide material layer away from the substrate;
A first side electrode and a second side electrode, wherein the first side electrode and the second side electrode are respectively arranged at two sides of the nano tungsten oxide material layer;
an insulating layer disposed on a side of the two-dimensional semiconductor material layer remote from the substrate, the insulating layer covering at least a portion of surfaces of the two-dimensional semiconductor material layer, the first side electrode, and the second side electrode;
and the top electrode is arranged on one side of the insulating layer far away from the substrate, and the orthographic projection of the top electrode on the substrate has no overlapping area with the orthographic projection of the first side electrode on the substrate and the orthographic projection of the second side electrode on the substrate.
2. The integrated silicon optical in-situ detection and modulation device of claim 1, wherein the nano tungsten oxide material layer satisfies at least one of the following conditions:
the material of the nano tungsten oxide material layer is WO 3-x Nano material, wherein x is more than or equal to 0 and less than 1;
said WO 3-x The nano material is a nano wire, the length of the nano wire is 50 nm-150 nm, and the width of the nano wire is 5 nm-20 nm;
said WO 3-x The nano material is a quantum dot, and the diameter of the quantum dot is less than or equal to 10nm.
3. The integrated device for in-situ detection and modulation of silicon light according to claim 1, wherein the two-dimensional semiconductor material layer comprises black phosphorus and PdSe 2 、PdS 2 At least one of the InSe and the like,
optionally, the thickness of the two-dimensional semiconductor material layer is 0.5 nm-20 nm.
4. A silicon light in situ detection and modulation integrated device according to any one of claims 1 to 3, wherein at least one of the following conditions is satisfied:
the first side electrode comprises a first sub-electrode layer and a second sub-electrode layer, the second sub-electrode layer is arranged on the surface of the first sub-electrode layer far away from the substrate, the first sub-electrode layer is made of chromium and has a thickness of 5-15 nm, and the second sub-electrode layer is made of gold and has a thickness of 40-80 nm;
the second side electrode comprises a third sub-electrode layer and a fourth sub-electrode layer, the fourth sub-electrode layer is arranged on the surface of the third sub-electrode layer far away from the substrate, the third sub-electrode layer is made of chromium and has a thickness of 5-15 nm, and the fourth sub-electrode layer is made of gold and has a thickness of 40-80 nm;
the top electrode comprises a fifth sub-electrode layer and a sixth sub-electrode layer, the sixth sub-electrode layer is arranged on the surface, far away from the substrate, of the fifth sub-electrode layer, the fifth sub-electrode layer is made of chromium and has a thickness of 5-10 nm, and the sixth sub-electrode layer is made of gold and has a thickness of 25-40 nm;
The insulating layer is made of hexagonal boron nitride;
the thickness of the insulating layer is 8 nm-20 nm.
5. A method of making the integrated silicon optical in-situ detection and modulation device of any one of claims 1-4, comprising:
placing a nano tungsten oxide material on one side surface of the two-dimensional semiconductor material layer to obtain a nano tungsten oxide material layer;
providing a substrate base material, and etching the substrate base material to obtain a substrate and a silicon waveguide;
forming a filling layer in the etched area of the substrate base material, so that the surface of the filling layer away from the substrate is flush with the surface of the silicon waveguide away from the substrate;
placing the two-dimensional semiconductor material layer on one side of the silicon waveguide away from the substrate, and placing the nano tungsten oxide material layer between the two-dimensional semiconductor material layer and the silicon waveguide;
forming a first side electrode and a second side electrode on two sides of the nano tungsten oxide material layer respectively;
forming an insulating layer on one side of the two-dimensional semiconductor material layer away from the substrate, wherein the insulating layer covers at least part of the surfaces of the two-dimensional semiconductor material layer, the first side electrode and the second side electrode;
And forming a top electrode on one side of the insulating layer away from the substrate, wherein the orthographic projection of the top electrode on the substrate is not overlapped with the orthographic projection of the first side electrode on the substrate and the orthographic projection of the second side electrode on the substrate.
6. The method of claim 5, wherein the nano tungsten oxide material is prepared by a solvothermal method.
7. The method of claim 6, wherein preparing the nano tungsten oxide material comprises the steps of:
adding tungsten hexachloride into ethanol, and stirring to obtain a first mixture;
placing the first mixture into a reaction kettle, and performing heat treatment at 150-200 ℃ for 10-15 h to obtain a second mixture;
and taking supernatant in the second mixture, centrifuging the supernatant to obtain a precipitate, and drying to obtain the nano tungsten oxide material.
8. A method according to any of claims 5-7, characterized in that the two-dimensional semiconductor material layer is placed on the side of the silicon waveguide remote from the substrate by means of a site-directed transfer.
9. Use of the integrated silicon optical in-situ detection and modulation device of any one of claims 1-4 in optical computing chips.
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