CN115206824A - Controllable multi-air-inlet-pipeline combined air inlet device and etching method - Google Patents
Controllable multi-air-inlet-pipeline combined air inlet device and etching method Download PDFInfo
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- CN115206824A CN115206824A CN202110381259.5A CN202110381259A CN115206824A CN 115206824 A CN115206824 A CN 115206824A CN 202110381259 A CN202110381259 A CN 202110381259A CN 115206824 A CN115206824 A CN 115206824A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D1/00—Pipe-line systems
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
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Abstract
The invention discloses a controllable multi-air inlet pipeline combined air inlet device and an etching method, wherein an air inlet pipeline is arranged above a vacuum chamber and comprises a main air inlet mechanism, a shunting air inlet mechanism and an upper chamber cover; the upper cavity cover covers the vacuum cavity, a plurality of branch air inlets are formed in the upper cavity cover, air is introduced from different positions of the upper cavity, so that the gas concentrations at different positions in the cavity are different, the concentrations of the gas at different positions in the cavity are controlled, the plasma concentrations generated by ionization of the gas in the cavity by a high-frequency electric field when the radio frequency is started are different, the generated plasma reacts with etching layer substances on the surface of the wafer to be etched, or a certain substance is generated between the plasmas to be deposited on the surface of the wafer, the gas concentrations at different positions in the cavity are controlled to be different, the etching or deposition coating speed of each position of the wafer in the cavity is controlled to be different, and the purposes of controlling and adjusting the etching and coating uniformity are achieved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a controllable multi-air-inlet pipeline combined air inlet device and an etching method.
Background
Plasma etching, the most common form of dry etching, is based on the principle that a gas exposed to an electron field forms a plasma, thereby generating ionized gas and a gas composed of released energetic electrons, thereby forming a plasma or ions, and atoms of the ionized gas, when accelerated by an electric field, release sufficient force to tightly adhere to a material or etch a surface with surface expulsion force. The invention is applied to the field of ICP and PECVD equipment and is used for etching wafers. The existing gas inlet device usually adopts a branch gas inlet to make gas enter the vacuum chamber, however, the existing gas inlet method has the following problems:
1. it is difficult to ensure the uniformity of the wafer in etching only by one branch gas inlet.
2. The local gas inlet concentration can not be adjusted, and the local etching of the wafer is inconvenient.
Disclosure of Invention
The present invention provides a controllable multi-inlet pipeline combined inlet device and an etching method, aiming at the defects of the prior art, the inlet device makes the gas concentration and the generated plasma concentration at different positions of the vacuum chamber different through a plurality of inlet pipelines and branch inlets, thereby controlling the etching or deposition coating speed of each position of the wafer in the chamber to be different, and achieving the purpose of controlling and adjusting the uniformity of etching and coating.
In order to solve the technical problems, the invention adopts the technical scheme that:
a controllable multi-air inlet pipeline combined air inlet device is arranged above a vacuum chamber and comprises a main air inlet mechanism, a split flow air inlet mechanism and an upper chamber cover; the upper cavity cover covers the vacuum cavity, a plurality of branch air inlets are formed in the upper cavity cover, and a central air inlet is formed in the upper cavity cover;
the total intake mechanism includes: the gas storage device comprises a gas holder, a first total gas inlet pipeline, a second total gas inlet pipeline, a gas storage cavity, a central gas inlet and a gas inlet diaphragm valve; one end of the first total air inlet pipeline is connected with the air cabinet, one end of the second total air inlet pipeline is connected with the first total air inlet pipeline, the other end of the second total air inlet pipeline is connected with the air storage cavity, and the air inlet diaphragm valve is positioned on the second total air inlet pipeline; the gas storage cavity is arranged on the central gas inlet;
the reposition of redundant personnel air inlet mechanism includes: the air conditioner comprises a first air inlet pipe, a second air inlet pipe and a first main air inlet pipe; one end of the first air inlet pipe and one end of the second air inlet pipe are connected to one end of the first main air inlet pipe, the other ends of the first air inlet pipe and the second air inlet pipe are connected with the edge of the upper cavity cover through branch air inlets, the other end of the first main air inlet pipe is connected with the other end of the first main air inlet pipeline, and diaphragm valves are arranged on the first air inlet pipe and the second air inlet pipe.
As a further preferable aspect of the present invention, the split air intake mechanism further includes: the air inlet pipe is connected with the upper cavity cover through a branch air inlet, the other end of the second main air inlet pipe is connected with a first main air inlet pipeline, and diaphragm valves are arranged on the third air inlet pipe and the fourth air inlet pipe.
In a further preferred embodiment of the present invention, the intake diaphragm valve and the intake valve are pneumatic valves.
As a further preferable aspect of the present invention, the upper chamber cover is provided with a circular groove, and a window is provided in the circular groove.
As a further optimization of the invention, the radio frequency capacitor and the radio frequency coil are further included, the radio frequency coil is in a spiral structure and is arranged in the window, and the radio frequency capacitor is connected to the radio frequency coil.
As a further preferable mode of the invention, the air conditioner further comprises an electromagnetic valve, wherein the diaphragm valve and the air inlet diaphragm valve are connected with the electromagnetic valve, and the electromagnetic valve is controlled to be switched on and off by a PLC; the PLC is connected to an upper computer.
As a further preferable mode of the present invention, the first total intake pipeline, the second total intake pipeline, the first intake pipe, the second intake pipe, the third intake pipe, the fourth intake pipe, the first main intake pipe, and the second main intake pipe are PU pipes.
An etching method capable of controlling a multi-air inlet pipeline combined air inlet device comprises the following steps:
the method comprises the following steps: placing a wafer in a vacuum chamber, wherein a central air inlet of an air storage cavity is positioned at the center of the wafer, and a plurality of branch air inlets are evenly distributed outside the periphery of the wafer;
step two: etching the wafer;
step three: after etching, measuring the thickness of each area of the wafer;
step four: when the thickness of the area between the center and the edge of the wafer is too large, the central air inlet and the branch air inlets on the corresponding side are opened, the other branch air inlets are closed, and when the thickness of the area between the edge of the wafer is too large, the central air inlet is closed and the branch air inlets on the corresponding side are opened;
step five: and repeating the second step to the fourth step until the thickness of each area reaches the standard.
As a further preference of the present invention, in the fourth step, a circle with a radius from the center of the circle to the outside 1/3 of the center of the circle is taken as an area a, a circle with a radius from the center of the circle to the outside 1/3 of the center of the circle to the outside 2/3 of the center of the circle is taken as an area B, and a circle with a radius from the center of the circle to the outside 2/3 of the center of the circle to the edge of the wafer is taken as an area C; dividing the wafer by crossing a center cross line of the wafer, wherein the B area forms a B1 area, a B2 area, a B3 area and a B4 area, and the C area forms a C1 area, a C2 area, a C3 area and a C4 area, wherein the B1 area is adjacent to the C1 area, the B2 area is adjacent to the C2 area, the B3 area is adjacent to the C3 area, the B4 area is adjacent to the C4 area, and a branch air inlet is respectively arranged at the arc middle position close to the C1 area, the C2 area, the C3 area and the C4 area; when the thickness of the wafer in the area A is too large, the four branch air inlets are closed, and the central air inlet is opened; when the thickness of the wafer in the B1 area is too large, opening the central air inlet and the branch air inlets close to the C1 area, and closing the other three branch air inlets, wherein the areas B2, B3 and B4 are the same; when the thickness of the wafer in the C1 area is too large, the central air inlet is closed, the branch air inlet close to the C1 area is opened, the other three branch air inlets are closed, and the same principle is applied to the C2 area, the C3 area and the C4 area.
As a further preferred aspect of the present invention, when the wafer thickness in the B1 region and the B2 region is too large, the central gas inlet and the two branch gas inlets close to the C1 region and the C2 region are opened, and the other two branch gas inlets are closed, and the B2 region and the B3 region, the B3 region and the B4 region, and the B4 region and the B1 region are the same; when the wafer thickness of the C1 area and the C2 area is too large, the central air inlet is closed, two branch air inlets close to the C1 area and the C2 area are opened, the other two branch air inlets are closed, and the C2 area and the C3 area, the C3 area and the C4 area, and the C4 area and the C1 area are the same.
The invention has the following beneficial effects:
1. the wafer etching device is provided with a plurality of air inlet pipelines and branch air inlets, so that the uniformity of wafers in etching can be ensured.
2. The plurality of pipelines are used for air intake and are provided with diaphragm valves, so that the local air intake concentration can be adjusted, and the local etching of the wafer is facilitated.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic diagram of the system architecture of the present invention;
FIG. 3 is a zone division view of a wafer;
among them are: 1. a vacuum chamber; 2. an upper chamber cover; 3. a branched air inlet; 4. a gas holder; 5. a first main intake line; 6. a second total intake conduit; 7. a gas storage cavity; 8. a central air inlet; 9. an air intake diaphragm valve; 10. a first intake pipe; 11. a second intake pipe; 12. a third intake pipe; 13. a fourth intake pipe; 14. a first main intake pipe; 15. a second main air inlet pipe; 16. a diaphragm valve; 17. a window; 18. a radio frequency capacitor; 19. a radio frequency coil; 20. an upper cavity cover handle; 21. and (5) a wafer.
Detailed Description
The present invention will be described in further detail with reference to the drawings and specific preferred embodiments.
In the description of the present invention, it is to be understood that the terms "left side", "right side", "upper part", "lower part", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and that "first", "second", etc., do not represent an important degree of the component parts, and thus are not to be construed as limiting the present invention. The specific dimensions used in the present example are only for illustrating the technical solution and do not limit the scope of protection of the present invention.
As shown in fig. 1-2, a controllable multi-intake pipeline combined intake device is arranged above a vacuum chamber 1, and comprises a main intake mechanism, a split intake mechanism and an upper chamber cover 2; the upper cavity cover 2 covers the vacuum cavity 1 to ensure the sealing performance of the vacuum cavity 1, a plurality of branch air inlets 3 are arranged on the upper cavity cover 2, a central air inlet 8 is arranged on the upper cavity cover 2, and a plurality of branch air inlets 3 and the central air inlet 8 are arranged on the upper cavity cover 2 to facilitate uniform etching of the wafer 21;
the total intake mechanism includes: the gas storage device comprises a gas holder 4, a first total gas inlet pipeline 5, a second total gas inlet pipeline 6, a gas storage cavity 7, a central gas inlet 8 and a gas inlet diaphragm valve 9; one end of a first total air inlet pipeline 5 is connected with an air holder 4, the first total air inlet pipeline 5 realizes the transportation of gas from the air holder 4 to a shunting air inlet mechanism, one end of a second total air inlet pipeline 6 is connected to the first total air inlet pipeline 5, the other end of the second total air inlet pipeline is connected to an air storage cavity 7, the second total air inlet pipeline 6 realizes the transportation of gas from the air holder 4 to the air storage cavity 7, an air inlet diaphragm valve 9 is arranged on the second total air inlet pipeline 6, and the air inlet diaphragm valve 9 can realize the opening and closing of gas entering the air storage cavity 7; the gas storage cavity 7 is arranged on the central gas inlet 8, and the gas storage cavity 7 is arranged on the central gas inlet 8, so that the uniform delivery of the gas of the split gas inlet mechanism is facilitated;
reposition of redundant personnel air intake mechanism includes: a first air inlet pipe 10, a second air inlet pipe 11 and a first main air inlet pipe 14; one end of a first air inlet pipe 10 and one end of a second air inlet pipe 11 are connected to one end of a first main air inlet pipe 14, the other end of the first air inlet pipe 10 and the other end of the second air inlet pipe 11 are connected with the edge of an upper cavity cover 2 through a branch air inlet 3, the other end of the first main air inlet pipe 14 is connected with the other end of a first main air inlet pipeline 5, a diaphragm valve 16 is arranged on the first air inlet pipe 10 and the second air inlet pipe 11, the first main air inlet pipe 14 is connected to the first main air inlet pipeline 5, transmission of gas to the first air inlet pipe 10 and the second air inlet pipe 11 is achieved, the first air inlet pipe 10 and the second air inlet pipe 11 are connected with the branch air inlet 3, gas is conveyed into a vacuum cavity 1, and a wafer 21 is etched.
The shunting air inlet mechanism in this embodiment can be a plurality of, can admit air through a plurality of branch air inlets 3, and etching to wafer 21 is more accurate and even, for example: reposition of redundant personnel air intake mechanism still includes: the air conditioner comprises a third air inlet pipe 12, a fourth air inlet pipe 13 and a second main air inlet pipe 15, wherein one end of the third air inlet pipe 12 and one end of the fourth air inlet pipe 13 are connected to one end of the second main air inlet pipe 15, the other ends of the third air inlet pipe 12 and the fourth air inlet pipe 13 are connected with the edge of an upper cavity cover 2 through a branch air inlet 3, the other end of the second main air inlet pipe 15 is connected with a first main air inlet pipeline 5, and diaphragm valves 16 are arranged on the third air inlet pipe 12 and the fourth air inlet pipe 13.
The air inlet diaphragm valve 9 and the diaphragm valve 16 are pneumatic valves and are made of cellulose diacetate or N 2 The gas pressure drives, simple structure, and the cost is lower.
The diaphragm valve 16 and the air inlet diaphragm valve 9 are connected with the electromagnetic valve, and the electromagnetic valve is controlled to be switched by a PLC; the PLC is connected to the upper computer and can be controlled through software.
A circular groove is formed in the upper cavity cover 2, and a window 17 is formed in the circular groove and used for mounting a radio frequency coil 19; the vacuum chamber further comprises a radio frequency capacitor 18 and a radio frequency coil 19, wherein the radio frequency coil 19 is in a spiral structure and is similar to a mosquito-repellent incense shape and is arranged in the window 17, the radio frequency capacitor 18 is connected to the radio frequency coil 19, when etching or coating is carried out, the radio frequency coil 19 and the radio frequency capacitor 18 are started, a high-frequency electric field is generated through the radio frequency coil 19, and gas entering the vacuum chamber 1 is ionized.
The material of the window 17 is an insulating material, preferably ceramic; the first total air inlet pipeline 5, the second total air inlet pipeline 6, the first air inlet pipe 10, the second air inlet pipe 11, the third air inlet pipe 12, the fourth air inlet pipe 13, the first main air inlet pipe 14 and the second main air inlet pipe 15 need to convey cellulose diacetate or N 2 It is necessary to use corrosion-resistant pipes, preferably PU pipes.
The upper cavity cover handle 20 is further arranged, the upper cavity cover handle 20 is arranged on two sides of the upper cavity cover 2, and the upper cavity cover 2 can be conveniently detached and placed.
The embodiment is provided with a plurality of air inlet pipelines and branch air inlets 3, so that the uniformity of the wafer 21 in etching can be ensured; and the plurality of pipelines are used for air intake and are provided with diaphragm valves 16, so that the local air intake concentration can be adjusted, and the local etching of the wafer 21 is facilitated.
The working principle is as follows:
when in work: the air inlet diaphragm valve 9 and all the diaphragm valves 16 are firstly opened to carry out etching or film coating, and radio frequency is started to generate a high-frequency electric field through a radio frequency coil 19 to ionize the gas entering the vacuum chamber 1. And then closing the air inlet diaphragm valves 9 and all the diaphragm valves 16, opening the vacuum chamber 1, measuring the thickness of the wafer 21, and if the measurement result needs local reprocessing, adjusting in an air inlet mode, opening only one diaphragm valve 16 to etch the wafer 21, and closing the other diaphragm valves 16.
The number of the air inlet pipelines and the number of the diaphragm valves 16 can be correspondingly increased or decreased according to requirements, the air inlet pipelines and the diaphragm valves 16 are not limited to the 5 air inlet pipelines and the diaphragm valves 16 in the figures 1-2, the air inlet pipelines and the diaphragm valves are driven by CDA or nitrogen gas pressure, the driving pipelines of the diaphragm valves 16 are connected to an electrical integrated electromagnetic valve, the electromagnetic valve is controlled to be switched on and off by a PLC, and the PLC is connected to an upper computer and is controlled by software.
As shown in fig. 3, an etching method for controlling a multi-intake pipeline combined intake device includes the following steps:
the method comprises the following steps: placing a wafer 21 in a vacuum chamber 1, wherein a central air inlet 8 of an air storage cavity 7 is positioned at the circle center of the wafer 21, and a plurality of branch air inlets 3 are evenly distributed outside the circle of the wafer 21; the area around the wafer 21 is covered by the branch air inlets 3, and the wafer 21 can be etched in all directions by matching with the central air inlet 8.
Step two: etching of wafer 21 is initiated, and the etching process is conventional.
Step three: after etching, measuring the thickness of each area of the wafer 21, if the local thickness is too large, keeping the original direction, and putting the wafer 21 back;
step four: adjusting an etching process:
when the central thickness is too large, the central air inlet 8 is opened, and all the branch air inlets 3 are closed;
when the thickness of the area between the circle center and the edge of the wafer 21 is too large, opening the central air inlet 8 and the branch air inlets 3 on the corresponding side, and closing the other branch air inlets 3;
when the thickness of the area between the edges of the wafer 21 is overlarge, the central air inlet 8 is closed, and the branch air inlets 3 on the corresponding sides are opened;
step five: and repeating the second step to the fourth step until the thickness of each area reaches the standard.
Specifically, in the fourth step, a circle with a radius from the center of the wafer 21 to the 1/3 outward of the center of the circle is taken as an area A, a circle with a radius from the center of the circle to the 1/3 outward of the center of the circle to the 2/3 of the radius is taken as an area B, and a circle with a radius from the center of the circle to the 2/3 outward of the center of the circle to the edge of the wafer 21 is taken as an area C; the wafer 21 is divided by a cross line passing through the center of a circle of the wafer 21, the area B forms an area B1, an area B2, an area B3 and an area B4, the area C forms an area C1, an area C2, an area C3 and an area C4, wherein the area B1 is adjacent to the area C1, the area B2 is adjacent to the area C2, the area B3 is adjacent to the area C3, the area B4 is adjacent to the area C4, the arc middle positions close to the area C1, the area C2, the area C3 and the area C4 are respectively provided with a branch air inlet 3, the wafer 21 is divided into nine small areas, and optimized trimming etching can be performed on the local part to improve the overall etching effect.
When the thickness of the wafer 21 in the area A is too large, the four branch gas inlets 3 are closed, the central gas inlet 8 is opened, the concentration of the etching gas in the area A is increased, and the trimming etching is performed on the area A.
When the thickness of the wafer 21 in the B1 region is too large, the central gas inlet 8 and the branch gas inlets 3 close to the C1 region are opened, and the other three branch gas inlets 3 are closed, so that the concentration of the etching gas in the B1 region is increased, and the B2 region, the B3 region, and the B4 region are treated by the trimming etching in the B1 region in the same manner.
When the thickness of the wafer 21 in the C1 region is too large, the central gas inlet 8 is closed, the branch gas inlets 3 close to the C1 region are opened, and the other three branch gas inlets 3 are closed, so that the concentration of the etching gas in the C1 region is increased, and the C2 region, the C3 region, and the C4 region are the same for the trimming etching of the C1 region.
Specifically, when the thickness of the wafer 21 in the B1 region and the B2 region is too large, the central gas inlet 8 and the two branch gas inlets 3 close to the C1 region and the C2 region are opened, and the other two branch gas inlets 3 are closed, so that the concentration of the etching gas in the B1 region and the B2 region is increased, and for the trimming etching of the B1 region and the B2 region, the B2 region and the B3 region, the B3 region and the B4 region, and the B4 region and the B1 region are the same;
when the thickness of the wafer 21 in the C1 region and the C2 region is too large, the central gas inlet 8 is closed, two branch gas inlets 3 close to the C1 region and the C2 region are opened, and the other two branch gas inlets 3 are closed, so that the concentration of the etching gas in the C1 region and the C2 region is increased, and the C2 region and the C3 region, the C3 region and the C4 region, and the C4 region and the C1 region are the same for the trimming etching of the C1 region and the C2 region.
Although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the details of the embodiments, and various equivalent changes may be made within the technical spirit of the present invention, and the technical scope of the present invention is also covered by the present invention.
Claims (10)
1. A controllable multi-air inlet pipeline combined air inlet device is arranged on a vacuum chamber (1), and is characterized in that: comprises a main air inlet mechanism, a shunt air inlet mechanism and an upper cavity cover (2); the upper cavity cover (2) covers the vacuum cavity (1), a plurality of branch air inlets (3) are arranged on the upper cavity cover (2), and a central air inlet (8) is arranged on the upper cavity cover (2);
the total intake mechanism includes: the gas storage device comprises a gas holder (4), a first total gas inlet pipeline (5), a second total gas inlet pipeline (6), a gas storage cavity (7), a central gas inlet (8) and a gas inlet diaphragm valve (9); one end of the first total air inlet pipeline (5) is connected with the air cabinet (4), one end of the second total air inlet pipeline (6) is connected to the first total air inlet pipeline (5), the other end of the second total air inlet pipeline is connected to the air storage cavity (7), and the air inlet diaphragm valve (9) is positioned on the second total air inlet pipeline (6); the gas storage cavity (7) is arranged on the central gas inlet (8);
reposition of redundant personnel air intake mechanism includes: the air inlet device comprises a first air inlet pipe (10), a second air inlet pipe (11) and a first main air inlet pipe (14); one end of a first air inlet pipe (10) and one end of a second air inlet pipe (11) are connected to one end of a first main air inlet pipe (14) together, the other ends of the first air inlet pipe (10) and the second air inlet pipe (11) are connected with the edge of an upper cavity cover (2) through a branch air inlet (3), the other end of the first main air inlet pipe (14) is connected with the other end of a first main air inlet pipeline (5), and diaphragm valves (16) are arranged on the first air inlet pipe (10) and the second air inlet pipe (11).
2. The combined air intake device with the controllable multiple air intake pipelines according to claim 1, characterized in that: reposition of redundant personnel air intake mechanism still includes: third intake pipe (12), fourth intake pipe (13), second main intake pipe (15), the one end of third intake pipe (12) and fourth intake pipe (13) is connected in the one end of second main intake pipe (15) jointly, the other end of third intake pipe (12) and fourth intake pipe (13) is connected with upper cover (2) edge through branch air inlet (3), the other end and the first main air inlet pipeline (5) of second main intake pipe (15) are connected, be equipped with diaphragm valve (16) on third intake pipe (12), fourth intake pipe (13).
3. The controllable multi-intake pipeline combination intake device according to claim 1, wherein: the air inlet diaphragm valve (9) and the air inlet valve are pneumatic valves.
4. The combined air intake device with the controllable multiple air intake pipelines according to claim 1, characterized in that: the upper cavity cover (2) is provided with a circular groove, and a window (17) is arranged in the circular groove.
5. The combined air intake device with the controllable multiple air intake pipelines according to claim 4, characterized in that: the radio frequency capacitor is characterized by further comprising a radio frequency capacitor (18) and a radio frequency coil (19), wherein the radio frequency coil (19) is of a spiral structure and is arranged in the window (17), and the radio frequency capacitor (18) is connected to the radio frequency coil (19).
6. The controllable multi-intake pipeline combination intake device according to claim 4, wherein: the window (17) is made of ceramic; the first total air inlet pipeline (5), the second total air inlet pipeline (6), the first air inlet pipe (10), the second air inlet pipe (11), the third air inlet pipe, (12) the fourth air inlet pipe (13), the first main air inlet pipe (14) and the second main air inlet pipe (15) adopt PU pipes.
7. The combined air intake device with the controllable multiple air intake pipelines according to claim 1, characterized in that: the diaphragm valve (16) and the air inlet diaphragm valve (9) are connected with the solenoid valve, and the solenoid valve is controlled to be switched by a PLC; the PLC is connected to an upper computer.
8. The etching method for the controllable multi-air inlet pipeline combined air inlet device according to any one of claims 1-7, characterized by comprising the following steps:
the method comprises the following steps: the wafer (21) is placed in a vacuum chamber (1), a central air inlet (8) of an air storage cavity (7) is positioned at the circle center of the wafer (21), and a plurality of branch air inlets (3) are evenly distributed outside the periphery of the wafer (21);
step two: starting etching on the wafer (21);
step three: after etching, measuring the thickness of each area of the wafer (21);
step four: when the center thickness is too large, opening the center air inlet (8), closing all the branch air inlets (3), when the thickness of the area between the circle center and the edge of the wafer (21) is too large, opening the center air inlet (8) and the branch air inlets (3) on the corresponding side, closing other branch air inlets (3), when the thickness of the area between the edge of the wafer (21) is too large, closing the center air inlet (8), and opening the branch air inlets (3) on the corresponding side;
step five: and repeating the second step to the fourth step until the thickness of each area reaches the standard.
9. The etching method for controlling the multi-air inlet pipeline combined air inlet device according to claim 8, is characterized in that: in the fourth step, a circle with the radius from the center of the wafer (21) to the outside 1/3 of the center of the circle is taken as an area A, a circle with the radius from the center of the outside 1/3 of the center of the circle to the outside 2/3 of the center of the circle is taken as an area B, and a circle with the radius from the center of the outside 2/3 of the center of the circle to the edge of the wafer (21) is taken as an area C; the wafer (21) is divided by a cross line passing through the center of a circle, a B area forms a B1 area, a B2 area, a B3 area and a B4 area, a C area forms a C1 area, a C2 area, a C3 area and a C4 area, wherein the B1 area is adjacent to the C1 area, the B2 area is adjacent to the C2 area, the B3 area is adjacent to the C3 area, the B4 area is adjacent to the C4 area, and a branch air inlet (3) is respectively arranged at the arc middle position close to the C1 area, the C2 area, the C3 area and the C4 area; when the thickness of the wafer (21) in the area A is too large, the four branch air inlets (3) are closed, and the central air inlet (8) is opened; when the thickness of the wafer (21) in the B1 area is too large, the central air inlet (8) and the branch air inlets (3) close to the C1 area are opened, the other three branch air inlets (3) are closed, and the B2 area, the B3 area and the B4 area are the same; when the thickness of the wafer (21) in the C1 area is too large, the central air inlet (8) is closed, the branch air inlets (3) close to the C1 area are opened, the other three branch air inlets (3) are closed, and the C2 area, the C3 area and the C4 area are the same.
10. The etching method for controlling the multi-air-inlet pipeline combined air inlet device according to claim 9, is characterized in that: when the thickness of the wafer (21) in the B1 area and the B2 area is too large, the central gas inlet (8) and two branch gas inlets (3) close to the C1 area and the C2 area are opened, the other two branch gas inlets (3) are closed, and the B2 area and the B3 area, the B3 area and the B4 area, and the B4 area and the B1 area are the same; when the thickness of the wafer (21) in the C1 area and the C2 area is too large, the central air inlet (8) is closed, two branch air inlets (3) close to the C1 area and the C2 area are opened, the other two branch air inlets (3) are closed, and the C2 area and the C3 area, the C3 area and the C4 area, and the C4 area and the C1 area are the same.
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| CN202110381259.5A CN115206824A (en) | 2021-04-09 | 2021-04-09 | Controllable multi-air-inlet-pipeline combined air inlet device and etching method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024139768A1 (en) * | 2022-12-25 | 2024-07-04 | 北京屹唐半导体科技股份有限公司 | Gas conveying device and system, and plasma processing device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024139768A1 (en) * | 2022-12-25 | 2024-07-04 | 北京屹唐半导体科技股份有限公司 | Gas conveying device and system, and plasma processing device |
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