CN115202160A - High-speed roller type photoetching method for continuously manufacturing narrow bus - Google Patents

High-speed roller type photoetching method for continuously manufacturing narrow bus Download PDF

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Publication number
CN115202160A
CN115202160A CN202210755696.3A CN202210755696A CN115202160A CN 115202160 A CN115202160 A CN 115202160A CN 202210755696 A CN202210755696 A CN 202210755696A CN 115202160 A CN115202160 A CN 115202160A
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CN
China
Prior art keywords
quartz cylinder
ultraviolet
roller type
narrow
lithography
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Pending
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CN202210755696.3A
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Chinese (zh)
Inventor
赵振合
刘絮霏
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Zhulei Semiconductor Technology Shanghai Co ltd
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Zhulei Semiconductor Technology Shanghai Co ltd
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Priority to CN202210755696.3A priority Critical patent/CN115202160A/en
Publication of CN115202160A publication Critical patent/CN115202160A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method of high speed roll lithography for continuous fabrication of narrow busbars, the process comprising the steps of: s1, installing a 365 nm wavelength linear ultraviolet light source in a quartz cylinder, and then installing the quartz cylinder in an ultraviolet light exposure unit of a roller type photoetching device; s2, when the flexible photomask is attached to the quartz cylinder, a thin adhesive polydimethylsiloxane layer is placed between the photomask and the quartz cylinder to be in conformal contact; s3, sputtering and depositing a copper layer with the thickness of 1 mu m on the glass substrate, and coating photoresist on the copper-plated glass; s4, moving the substrate moving assembly of the roller type photoetching equipment to move the photoresist coating substrate at the speed of 4-24 mm/S, and setting the ultraviolet dose to be 80-170 mJ/cm 2 (ii) a S5, developing in a developing unit after ultraviolet exposure, and washing with deionized water; and S6, after photoetching, immersing the glass substrate into a copper etchant for selective etching to form a narrow bus. The high-speed roller type photoetching method for continuously manufacturing the narrow bus realizes high-speed roller type photoetching by using a high-intensity ultraviolet light source and improves goldBelonging to the productivity of microstructure manufacture.

Description

High-speed roller type photoetching method for continuously manufacturing narrow bus
Technical Field
The invention relates to the technical field of photoetching, in particular to a high-speed roller type photoetching method for continuously manufacturing narrow busbars.
Background
Conventional photolithography, although limited by discontinuities, remains the dominant method for producing various micro/nano structures due to its high reproducibility, reliability and mature pre-and post-processes. Conventional photolithography techniques do not use flexible substrates to fabricate products for large area electronic and photonic devices. With the increasing demand, several continuous techniques for large area and flexible pattern fabrication have emerged, such as roll-to-roll nanoimprint lithography (R2 RNIL). However, the throughput of these techniques is still insufficient to meet the application requirements of conventional manufacturing methods. Roll lithography is based on conventional lithography, which can be extended to continuous processes by large area patterning using a roll-type photomask. The roll lithography allows a continuous process using a linear ultraviolet light source and a flexible photomask having a metal pattern. However, the typical ultraviolet intensity of the conventional photolithography is too weak for the roll photolithography in view of the production speed, and the ultraviolet dose required for the application in the roll photolithography process cannot be achieved, and the linear type ultraviolet light source used in the continuous photolithography has a very low absolute ultraviolet dose per unit area due to a narrow exposure width, and is difficult to be used for continuously manufacturing narrow bus bars. In addition, the offset printing method manufactures a bus bar composed of copper, which is a material having good conductivity, and the manufactured bus bar shows practical applications in technologies such as smart phones, displays, and televisions. However, resolution is limited and the offset printing method is not suitable for narrow-frame or frameless manufacturing. To this end, we propose a method for high-speed roll lithography for the continuous fabrication of narrow busbars.
Disclosure of Invention
The main object of the present invention is to provide a high-speed roller lithography method for continuously manufacturing narrow bus bars, which can effectively solve the problems of the background art.
A method of high speed roll lithography for continuous fabrication of narrow busbars, the process comprising the steps of:
s1, installing a 365 nm wavelength linear ultraviolet light source in a quartz cylinder, and then installing the quartz cylinder in an ultraviolet light exposure unit of a roller type photoetching device;
s2, when the flexible photomask is attached to the quartz cylinder, a thin viscous polydimethylsiloxane layer is placed between the photomask and the quartz cylinder to be in conformal contact;
s3, sputtering and depositing a copper layer with the thickness of 1 mu m on the glass substrate, and coating photoresist on the copper-plated glass;
s4, moving the substrate moving assembly of the roller type photoetching equipment to move the photoresist coating substrate at the speed of 4-24 mm/S, and setting the ultraviolet dose to be 80-170 mJ/cm 2 ；
S5, developing in a developing unit after ultraviolet exposure, and washing with deionized water;
and S6, after photoetching, immersing the glass substrate into a copper etchant for selective etching to form a narrow bus.
Further, the step S1 includes:
(1) the ultraviolet intensity of the linear ultraviolet light source is 300-1500 mW/cm 2 The width is 120 mm, and the slit ultraviolet exposure area is 5 mm;
(2) the quartz cylinder has a diameter of 110 mm and a thickness of 5mm.
Further, the step S2 includes: the line width and the space of the flexible photomask are both 13-17 mu m.
Further, the step S3 includes: the photoresist was 3 μm thick and was a positive photoresist.
Further, the step S4 includes: the uv dose is a function of the stage speed and uv intensity as shown in the following equation:
D=I×w/v
where D is the UV dose of the PRL, I is the UV intensity, and w and v are the slit width of the UV light source and the stage movement speed, respectively.
Further, the step S5 includes: the developing time is 1-2 min.
The invention provides a high-speed roller photoetching method for continuously manufacturing narrow bus bars, which is used for controlling the ultraviolet intensity to be 300-1500 mW/cm 2 A 365 nm wavelength linear ultraviolet light source with the width of 120 mm and a slit ultraviolet exposure area of 5mm is arranged in a quartz cylinder with the diameter of 110 mm, and then the quartz cylinder is arranged in an ultraviolet light exposure unit of the roller type photoetching equipment, so that the high intensity of the ultraviolet light source is ensured; when a flexible photomask with the line width and the space of 13-17 mu m is attached to a quartz cylinder, a thin viscous polydimethylsiloxane layer is firstly placed between the photomask and the quartz cylinder for conformal contact, so that a flexible substrate is added in the process; sputtering and depositing a copper layer with the thickness of 1 mu m on a glass substrate, and coating a positive photoresist with the thickness of 3 mu m on the copper-plated glass; moving group of substrate of roller type photoetching equipmentThe piece moves the photoresist coating substrate at a speed of 4-24 mm/s, and the ultraviolet dose is set to 80-170 mJ/cm 2 Developing in a developing unit for 1-2 min after ultraviolet exposure, and washing with deionized water, thereby forming a micro-photoresist pattern in continuous high-speed roller type photoetching; after photolithography, the glass substrate is immersed in a copper etchant for selective etching to form narrow bus bars, thereby improving productivity in the fabrication of metal microstructures.
Drawings
FIG. 1 is a schematic flow diagram of a high speed roll lithography method for continuously fabricating narrow bus bars in accordance with the present invention.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
As shown in fig. 1, a method of high speed roll lithography for continuously manufacturing narrow bus bars, the processing method comprises the steps of:
s1, installing a 365 nm wavelength linear ultraviolet light source in a quartz cylinder, and then installing the quartz cylinder in an ultraviolet light exposure unit of a roller type photoetching device;
s2, when the flexible photomask is attached to the quartz cylinder, a thin adhesive polydimethylsiloxane layer is placed between the photomask and the quartz cylinder to be in conformal contact;
s3, sputtering and depositing a copper layer with the thickness of 1 mu m on the glass substrate, and coating photoresist on the copper-plated glass;
s4, moving the substrate moving assembly of the roller type photoetching equipment to move the photoresist coating substrate at the speed of 4-24 mm/S, and setting the ultraviolet dose to be 80-170 mJ/cm 2 ；
S5, developing in a developing unit after ultraviolet exposure, and washing with deionized water;
and S6, after photoetching, immersing the glass substrate into a copper etchant for selective etching to form a narrow bus.
According to the technical scheme provided by the invention, the step S1 comprises the following steps:
(1) ultraviolet intensity of a linear ultraviolet light sourceThe degree is 300-1500 mW/cm 2 The width is 120 mm, and the slit ultraviolet exposure area is 5 mm;
(2) the quartz cylinder has a diameter of 110 mm and a thickness of 5mm.
According to the technical scheme provided by the invention, the step S2 comprises the following steps: the line width and the space of the flexible photomask are both 13-17 mu m.
According to the technical scheme provided by the invention, the step S3 comprises the following steps: the photoresist was 3 μm thick and was a positive photoresist.
According to the technical scheme provided by the invention, the step S4 comprises the following steps: the uv dose is a function of the stage speed and uv intensity as shown in the following equation:
D=I×w/v
where D is the UV dose of the PRL, I is the UV intensity, and w and v are the slit width of the UV light source and the stage movement speed, respectively.
According to the technical scheme provided by the invention, the step S5 comprises the following steps: the developing time is 1-2 min.
The invention provides a high-speed roller type photoetching method for continuously manufacturing narrow buses, wherein workers enable ultraviolet intensity to be 300-1500 mW/cm 2 A 365 nm wavelength linear ultraviolet light source with the width of 120 mm and a slit ultraviolet exposure area of 5mm is arranged in a quartz cylinder with the diameter of 110 mm, and then the quartz cylinder is arranged in an ultraviolet light exposure unit of the roller type photoetching equipment; then the worker attaches a flexible photomask with line width and spacing of 13-17 μm to the quartz cylinder, first placing a thin adhesive polydimethylsiloxane layer between the photomask and the quartz cylinder for conformal contact; sputtering and depositing a copper layer with the thickness of 1 mu m on a glass substrate, and coating a positive photoresist with the thickness of 3 mu m on the copper-plated glass; then the staff moves the substrate moving assembly of the roller type photoetching equipment to move the photoresist coating substrate at the speed of 4-24 mm/s, and the ultraviolet dose is set to be 80-170 mJ/cm 2 Developing in a developing unit for 1-2 min after ultraviolet exposure, and washing with deionized water; after photoetching, the glass substrate is immersed in a copper etchant for selective etching to form a narrow bus. By using high intensity UV light sourcesHigh speed roller lithography greatly improves the productivity of metal microstructure fabrication.
The foregoing shows and describes the general principles and features of the present invention, together with the advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (6)

1. A method of high speed roller lithography for continuous fabrication of narrow busbars, characterised by: the processing method comprises the following steps:
s1, installing a 365 nm wavelength linear ultraviolet light source in a quartz cylinder, and then installing the quartz cylinder in an ultraviolet light exposure unit of a roller type photoetching device;
s2, when the flexible photomask is attached to the quartz cylinder, a thin adhesive polydimethylsiloxane layer is placed between the photomask and the quartz cylinder to be in conformal contact;
s3, sputtering and depositing a copper layer with the thickness of 1 mu m on the glass substrate, and coating photoresist on the copper-plated glass;
s4, moving the substrate moving assembly of the roller type photoetching equipment to move the photoresist coating substrate at the speed of 4-24 mm/S, and setting the ultraviolet dose to be 80-170 mJ/cm 2 ；
S5, developing in a developing unit after ultraviolet exposure, and washing with deionized water;
and S6, after photoetching, immersing the glass substrate into a copper etchant for selective etching to form a narrow bus.
2. A method of high speed roll lithography for continuous fabrication of narrow busbars according to claim 1, wherein: the step S1 comprises the following steps:
(1) the ultraviolet intensity of the linear ultraviolet light source is 300-1500 mWcm 2 The width is 120 mm, and the slit ultraviolet exposure area is 5 mm;
(2) the quartz cylinder has a diameter of 110 mm and a thickness of 5mm.
3. A method of high speed roller lithography for continuous fabrication of narrow busbars according to claim 1, in which: the step S2 includes: the line width and the space of the flexible photomask are both 13-17 mu m.
4. A method of high speed roller lithography for continuous fabrication of narrow busbars according to claim 1, in which: the step S3 comprises the following steps: the photoresist was 3 μm thick and was a positive photoresist.
5. A method of high speed roller lithography for continuous fabrication of narrow busbars according to claim 1, in which: the step S4 comprises the following steps: the uv dose is a function of the stage speed and uv intensity as shown in the following equation:
D=I×w/v
where D is the UV dose of the PRL, I is the UV intensity, and w and v are the slit width of the UV light source and the stage movement speed, respectively.
6. A method of high speed roll lithography for continuous fabrication of narrow busbars according to claim 1, wherein: the step S5 comprises the following steps: the developing time is 1-2 min.
CN202210755696.3A 2022-06-30 2022-06-30 High-speed roller type photoetching method for continuously manufacturing narrow bus Pending CN115202160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210755696.3A CN115202160A (en) 2022-06-30 2022-06-30 High-speed roller type photoetching method for continuously manufacturing narrow bus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210755696.3A CN115202160A (en) 2022-06-30 2022-06-30 High-speed roller type photoetching method for continuously manufacturing narrow bus

Publications (1)

Publication Number Publication Date
CN115202160A true CN115202160A (en) 2022-10-18

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Application Number Title Priority Date Filing Date
CN202210755696.3A Pending CN115202160A (en) 2022-06-30 2022-06-30 High-speed roller type photoetching method for continuously manufacturing narrow bus

Country Status (1)

Country Link
CN (1) CN115202160A (en)

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