CN115194170A - Plasma atomization deposition method and equipment - Google Patents
Plasma atomization deposition method and equipment Download PDFInfo
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- CN115194170A CN115194170A CN202210860169.9A CN202210860169A CN115194170A CN 115194170 A CN115194170 A CN 115194170A CN 202210860169 A CN202210860169 A CN 202210860169A CN 115194170 A CN115194170 A CN 115194170A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
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- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/14—Making metallic powder or suspensions thereof using physical processes using electric discharge
Abstract
The plasma atomization deposition equipment comprises an atomization deposition cabin, a depositor and at least one plasma source, wherein a nozzle of the plasma source is arranged in the atomization deposition cabin, and the plasma source is used for spraying plasma to a metal source so that the metal source is atomized to form metal molten drops under the action of the plasma; the depositor is arranged in the atomization deposition cabin, is positioned below the plasma source and is used for receiving the metal molten drops formed by atomization to form a deposition billet. The method solves the technical problem that the porosity of the billet prepared by spray deposition in the prior art is higher.
Description
Technical Field
The application relates to the technical field of plasma atomization deposition, in particular to a plasma atomization deposition method and plasma atomization deposition equipment.
Background
The spray deposition technology is also called spray forming or spray casting, and is a preparation technology of a rapid solidification forming material. At present, the spray deposition technology generally crushes and atomizes molten metal liquid flow into fine molten drops through high-pressure and high-speed inert gas, the molten drops are cooled into a semi-solid state in the flight process and then deposited on a moving depositor, and the molten drops are accumulated layer by layer and finally solidified to form a compact alloy billet with a certain shape and size, so that liquid metal is prepared into the billet which is compact as a whole, refined in structure, uniform in components, complete in structure and close to the actual shape of a part.
However, the porosity of the billet prepared by the current spray deposition process is high, which restricts the practical engineering application of the spray deposition technology.
Disclosure of Invention
The main purpose of the present application is to provide a plasma atomization deposition method and apparatus, which aim to solve the technical problem of high porosity of the billet prepared by spray deposition in the prior art.
To achieve the above object, the present application provides a plasma atomizing deposition apparatus comprising an atomizing deposition chamber, a depositor and at least one plasma source, wherein,
the nozzle of the plasma source is arranged in the atomization deposition cabin, and the plasma source is used for spraying plasma to the metal source so that the metal source is atomized to form metal molten drops under the action of the plasma;
the depositor is arranged in the atomization deposition cabin, is positioned below the plasma source and is used for receiving the metal molten drops formed by atomization to form a deposition billet.
Optionally, the plasma atomization deposition apparatus further comprises:
a metal source conveying device for conveying the metal source into the atomized deposition chamber
And/or a metal source preheating device used for carrying out preheating treatment on the metal source.
Optionally, the plasma source is a non-transferred arc plasma torch comprising a plasma torch housing, a cathode, an anode, a first gas inlet passageway, and a nozzle, wherein,
the cathode and the anode are disposed within the plasma torch housing for generating a plasma arc;
the first gas inlet passage penetrates through the plasma torch shell, is connected with an inert gas source and the plasma torch and is used for introducing inert gas into the plasma torch;
the nozzle is arranged on the plasma torch shell and used for ejecting plasma from the interior of the plasma torch shell.
Optionally, the nozzle is of a converging or laval configuration.
Optionally, the plasma atomization deposition device further comprises a powder collecting device, wherein the powder collecting device is arranged at the bottom in the atomization deposition cabin and is used for collecting residual powder formed by solidification in a region outside the depositor.
Optionally, the plasma atomization deposition apparatus further comprises:
the second air inlet passage penetrates through the shell of the atomization and deposition chamber, is connected with an inert gas source and the atomization and deposition chamber and is used for introducing inert gas into the atomization and deposition chamber;
and/or the air outlet passage penetrates through the atomization deposition cabin shell of the atomization deposition cabin, is connected with the vacuum filtering device and the atomization deposition cabin, and is used for pumping out the gas in the atomization deposition cabin.
The application also provides a plasma atomization deposition method, which adopts the plasma atomization deposition equipment, and comprises the following steps:
atomizing a metal source through at least one plasma source to form metal molten drops, wherein the metal source is solid;
and receiving the atomized metal droplets by a depositor to form a deposition billet.
Optionally, the step of receiving the atomized metal droplets by a depositor to form a deposition billet comprises:
adjusting an initial position and/or an initial tilt angle of the depositor;
and controlling the depositor to move based on a preset moving path, a preset rotating angle, a preset moving speed and/or a preset rotating speed, and receiving the atomized metal molten drops to form a deposition billet.
Optionally, the metal source comprises a metal wire, a metal rod, or a metal powder.
Optionally, the particle size D50 of the metal droplets is 30-40 μm.
The plasma atomization deposition equipment comprises an atomization deposition cabin, a depositor and at least one plasma source, wherein a nozzle of the plasma source is arranged in the atomization deposition cabin, and the plasma source is used for spraying plasma to a metal source so that the metal source is atomized to form metal molten drops under the action of the plasma; the depositor is arranged in the atomization deposition cabin, is positioned below the plasma source and is used for receiving the metal molten drops formed by atomization to form a deposition billet. Plasma is sprayed to the metal source through the plasma source, so that the metal source is directly under the action of the plasma, the heat energy of the plasma is absorbed, metal molten drops are formed by instant solid atomization, the metal molten drops are spread on the precipitator under the action of kinetic energy and gravity of the plasma, after the metal source is melted into molten metal, the molten metal is broken through high-pressure gas and is atomized and sprayed, the particle size of the metal molten drops formed by directly atomizing the metal source by the plasma is small, the distribution range is narrow, the solid-liquid phase content of the metal molten drops is controllable, and then when the metal molten drops are spread, splashing and stacking are not prone to occurring, the generation of interstitial pores and involved pores is reduced, the porosity of a billet is effectively reduced, and the technical problem that the porosity of the billet prepared by spray deposition in the prior art is higher is solved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic illustration of the interstitial pore generation mechanism in the present application;
FIG. 2 is a schematic diagram of an involved pore generation mechanism in the present application;
FIG. 3 is a schematic diagram of an embodiment of a plasma atomizing deposition apparatus according to the present application;
FIG. 4 is a schematic diagram illustrating an exemplary embodiment of plasma spray deposition using a plate-shaped depositor according to the present teachings;
FIG. 5 is a schematic view of an exemplary embodiment of a plasma spray deposition process using a rod-shaped deposition apparatus;
FIG. 6 is a schematic flow chart diagram illustrating an embodiment of a plasma spray deposition method of the present application.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 1 | |
2 | Metal |
| 3 | Metal |
4 | |
| 5 | |
6 | Metal |
| 7 | |
8 | |
| 9 | Deposition of |
10 | Second |
| 11 | |
12 | |
| 13 | |
100 | |
| 200 | |
300 | Involved air hole |
The implementation of the objectives, functional features, and advantages of the present application will be further described with reference to the accompanying drawings.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments accompanying figures are described in detail below. It should be apparent that the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The spray deposition technology is also called spray forming or spray casting, and is a preparation technology of a rapid solidification forming material. At present, the spray deposition technology generally crushes and atomizes molten metal flow into fine molten droplets through high-pressure and high-speed inert gas, the molten droplets are cooled into a semi-solid state in the flight process and then deposited on a moving depositor, and the molten droplets are accumulated layer by layer and finally solidified to form a compact alloy billet with a certain shape and size, so that liquid metal is prepared into the billet which is compact as a whole, refined in structure, uniform in components, complete in structure and close to the actual shape of a part.
However, current spray deposition processes produce ingots in which a certain amount of porosity will inevitably be present. Generally, two types are mainly classified according to the mechanism of pore formation: one is interstitial voids 200 as shown in fig. 1, which are generated because the solid content of the deposited layer 100 is high and the solid content of the metal droplets 6 is relatively high, which are not completely spread when they collide with the deposited layer 100, but are stacked one on another, thereby generating interstitial voids 200 among the particles, which are finally remained in the solidified ingot if sufficient liquid phase replenishment is not obtained in the subsequent deposition process. The other is the entanglement vent 300 shown in fig. 2, which is generated mainly because the content of the liquid phase in the deposition layer 100 is high, the metal droplet 6 flying at a high speed does not spread on the surface of the deposition layer 100 but is injected into the deposition layer 100 to form a passage, and the passage is closed by the subsequent metal droplet 6 to form the entanglement vent 300, and the metal droplet 6 having a large size and a high content of the liquid phase may cause splashing when it impacts the deposition layer 100, thereby inducing secondary entanglement.
In addition, in the gas atomization process, high-pressure high-speed inert gas flow impacts molten metal, the air entrainment is easily caused in the crushing process, so that hollow molten drops are formed, and if the molten metal cannot be smoothly discharged in the deposition process, the molten metal is wrapped and enters the billet to form closed air holes.
Under the impact crushing of the molten metal at high pressure telling airflow, the particle size distribution of formed molten drops is wide and is different from several micrometers to hundreds of micrometers, the solid-liquid phase content of the molten drops with different sizes when reaching a deposition layer is difficult to ensure, the small-size molten drops are often completely solidified into solid powder, and the liquid phase amount of the large-size molten drops is still very high, so that the phenomena of stacking, rolling and splashing can be inevitably generated in the process of impacting the deposition layer by the molten drops, and further air holes are formed.
Closed porosity in the ingot, once formed, is difficult to remove by post-processing, which severely limits the practical engineering application of conventional spray deposition techniques.
The present embodiment provides a plasma 5 atomizing deposition apparatus, and in an embodiment of the plasma 5 atomizing deposition apparatus of the present invention, referring to fig. 3, the plasma 5 atomizing deposition apparatus comprises an atomizing deposition chamber 12, a depositor 8 and at least one plasma source 4, wherein,
the nozzle of the plasma source 4 is arranged in the atomization deposition chamber 12, and the plasma source 4 is used for spraying plasma 5 to the metal source 1, so that the metal source 1 is atomized to form metal droplets 6 under the action of the plasma 5;
the depositor 8 is arranged in the atomization deposition cabin 12 and is positioned below the plasma source 4 and used for receiving the metal molten drops 6 formed by atomization to form a deposition billet 9.
In this embodiment, it should be noted that the atomization deposition chamber 12 forms a certain chamber space through the housing of the atomization deposition chamber 12, and the chamber space is used for carrying out the atomization deposition process of the plasma 5 to form a billet.
The metal source 1 is a solid, and since the metal source 1 is only supplied as a raw material and does not need to serve as an electrode or have other functions, the form of the metal source 1 has more selectivity, including but not limited to a metal wire, a metal rod, a metal powder, and the like; the metal source 1 may be a single kind of metal or an alloy; the metal source 1 is erected in the atomization deposition cabin 12 through a fixing device or a material conveying device, in a use state, the metal source 1 is erected above the depositor 8, and the tail end of the metal source 1 can be in direct contact with the plasma 5 sprayed by the plasma source 4. Compared with the traditional spray forming technology in which molten metal needs to contact a crucible and a flow guide pipe, the plasma 5 spray deposition equipment provided by the invention can realize non-contact atomization, thereby avoiding pollution to the molten metal in the atomization process, being applicable to deposition forming of active metal or alloy, and having wider application range, and the plasma source 4 sprays a mode that the plasma 5 is in direct contact with the metal source 1, so that the defects of back spray, flow guide pipe blockage, low superheat degree of the molten metal and the like associated with the traditional gas atomization process are effectively avoided, the process forming stability is higher, and meanwhile, due to the adoption of a solid feeding mode, compared with the molten metal, the plasma 5 spray deposition equipment is more controllable, and the forming of blanks with more shapes in three-dimensional space and with the adjustment along with the stop in the forming process can be realized.
The plasma source 4 is a device for generating high-temperature plasma 5, the plasma 5 atomizing deposition apparatus is provided with at least one plasma source 4, for example, 1, 2, 4, etc., each plasma source 4 is arranged on the housing of the atomizing deposition chamber 12, can penetrate through the housing of the atomizing deposition chamber 12, and can also be arranged inside the atomizing deposition chamber 12, the nozzle of the plasma source 4 is located in the atomizing deposition chamber 12 and faces the direction of the metal source 1, the plasma source 4 is used for forming the generated high-temperature plasma 5 into a high-temperature and high-speed plasma 5 jet, and spraying the high-temperature and high-speed plasma 5 jet to the metal source 1 through the nozzle, so that the metal source 1 atomizes and forms metal droplets 6 with fine and uniform sizes under the action of the plasma 5, wherein the particle size D50 of the metal droplets 6 is 30-40 μm, and compared with the conventional gas atomizing spray deposition process, the plasma 5 atomizing deposition apparatus provided by the present application can save the gas amount of more than 2/3; the temperature of the plasma 5 jet flow can reach more than 10000K, and compared with the traditional spray forming process, the plasma 5 atomization deposition equipment provided by the invention can be suitable for deposition forming of refractory metals or alloys, and has a wider application range.
In an implementable manner, each plasma source 4 is provided with the same height and is distributed in an equal angle in a horizontal plane, a nozzle of each plasma source 4 faces to a distribution center of each plasma source 4, so that the plasma 5 is converged in a certain area around the distribution center after being sprayed, and the tip of the metal source 1 is positioned in the certain area around the distribution center and is in direct contact with the plasma 5 sprayed by the plasma source 4. Plasma 5 sprayed by the plasma source 4 distributed at equal angles is more concentrated and distributed more uniformly, so that the distribution range of the particle size of the atomized metal molten drop 6 is more concentrated, and the distribution range of the solid-liquid phase content is more concentrated, therefore, when the metal molten drop 6 contacts with a deposition layer formed on a receiving tray, the probability of splashing and stacking is lower, the spreading effect is better, the generation of interstitial pores and involved pores is reduced, the porosity of a billet is effectively reduced, and the technical problem that the porosity of the billet prepared by spray deposition in the prior art is higher is solved.
The depositor 8 is arranged in the atomization deposition cabin 12, in a use state, the depositor 8 is positioned below the plasma source 4, after the metal molten drops 6 formed by atomization fly for a period of time, the metal molten drops 6 are gradually solidified to form semi-solid metal molten drops 6, the semi-solid metal molten drops 6 are contacted with the depositor 8 and spread on the surface of the depositor 8 to form a deposition layer, and then deposition layer by layer of the deposition layer can form a deposition billet 9 on the depositor 8, wherein the depositor 8 can be flat, tubular, columnar or irregular, the position and the angle of the depositor 8 can be fixed or unfixed, and if the position and the angle of the depositor 8 are unfixed, the position and the angle of the depositor 8 can be accurately controlled or dynamically adjusted in real time through a preprogrammed program.
In an implementable manner, in the process of plasma 5 atomization deposition, when a second deposition layer is to be processed on a first deposition layer after the first deposition layer of the ingot is processed, the depositor 8 may be moved away from the plasma source 4 to keep a fixed deposition distance, and then the second deposition layer may be processed under the same process conditions as the first deposition layer, thereby reducing a cumbersome process of adjusting the process conditions.
In a practical way, referring to fig. 4, during the atomization deposition of the plasma 5, a flat plate-shaped depositor 8 can be adopted, and the depositor 8 can be translated in a horizontal plane and/or rotated around a fixed point or a fixed axis in space so as to avoid that the metal droplets 6 form a similar conical body with a gaussian distribution on the depositor 8, and further, the deposition forming of the deposition billets 9 with different thicknesses and step-shaped flat plates can be realized by adjusting the horizontal moving speed and/or the reciprocating frequency of the depositor 8.
In a practical mode, referring to fig. 5, during the process of atomizing and depositing the tubular deposition billet 9 by the plasma 5, the tubular or cylindrical depositor 8 can be adopted, and the depositor 8 can axially translate and/or rotate along the central shaft, so that the deposition formation of the tubular deposition billet 9 can be realized, and further, the deposition formation of the tubular deposition billet 9 with different outer diameters or with variable outer diameters can be realized by adjusting the axial translation speed and/or the rotation speed.
Optionally, the plasma 5 atomization deposition apparatus further comprises:
the metal source conveying device 2 is used for conveying the metal source 1 into the atomization deposition cabin 12;
and/or a metal source preheating device 3 for performing preheating treatment on the metal source 1.
In this embodiment, it should be noted that the metal source conveying device 2 is a device for conveying a metal source into the atomization deposition chamber 12, and includes a straightening wire feeder, a bar material feeder, or a vacuum degassing fast powder conveying device. The metal source 1 can be continuously conveyed into the atomization deposition cabin 12 through the metal source conveying device 2, so that the long-time continuous production can be realized, deposition billets 9 of hundreds of grams to hundreds of kilograms can be processed, and the production efficiency can reach 5-25kg per hour according to different feeding speeds and plasma 5 torch powers.
The metal source preheating device 3 is a device for heating the metal source 1, and comprises a medium-frequency induction heating device, a high-frequency induction heating device, an ultrahigh-frequency induction heating device or a radio-frequency plasma 5 generator and the like.
Optionally, the plasma source 4 is a non-transferred arc plasma 5 torch comprising a plasma 5 torch housing, a cathode, an anode, a first gas inlet passage, and a nozzle, wherein,
the cathode and the anode are disposed within the plasma 5 torch housing for generating a plasma 5 arc;
the first gas inlet passage penetrates through the plasma torch 5 shell, is connected with an inert gas source and the plasma torch 5 and is used for introducing inert gas into the plasma torch 5;
the nozzle is arranged on the plasma torch shell 5 and is used for ejecting the plasma 5 from the inside of the plasma torch shell 5.
In this embodiment, it should be noted that the plasma source 4 is a non-transferred arc plasma 5 torch, the plasma 5 arc is established between a cathode and an anode inside a plasma 5 torch housing, at least one path of inert gas is introduced into the plasma 5 torch housing through the first gas inlet passage, and expands under the heating of the plasma 5 arc at high temperature, so as to force the plasma 5 to be ejected from the nozzle.
Optionally, the nozzle is of a converging or laval configuration.
In this embodiment, it should be noted that the high temperature plasma 5 generated by the plasma source 4 can be further accelerated and converged by using the nozzle with the contraction structure or the laval structure, so that the thermal energy and the kinetic energy of the plasma 5 ejected from the plasma source 4 can be more intensively applied to the metal source 1.
Optionally, the plasma 5 atomization deposition device further comprises a powder collecting device 13, and the powder collecting device 13 is arranged at the bottom inside the atomization deposition cabin 12 and is used for collecting residual powder formed by solidification in a region outside the depositor 8.
In this embodiment, it should be noted that during the atomization deposition process of the plasma 5, a small portion of the metal droplets 6 that are not deposited on the deposition disc will continue to fly in the atomization deposition chamber 12 and solidify to form residual powder, and finally fall into the powder collecting device 13 disposed at the bottom of the atomization deposition chamber 12.
Optionally, the plasma 5 atomization deposition apparatus further comprises:
the second air inlet passage 10 penetrates through a shell of an atomization deposition cabin 12 of the atomization deposition cabin 12, is connected with an inert gas source and the atomization deposition cabin 12, and is used for introducing inert gas into the atomization deposition cabin 12;
and/or the air outlet passage 11, wherein the air outlet passage 11 penetrates through the shell of the atomization deposition cabin 12, is connected with the vacuum filtering device and the atomization deposition cabin 12, and is used for pumping out the gas in the atomization deposition cabin 12.
In this embodiment, it should be noted that, by introducing an inert gas into the atomization deposition chamber 12 through the second gas inlet passage 10, and/or by extracting a gas inside the atomization deposition chamber 12 through the gas outlet passage 11, the atmosphere in the atomization deposition chamber 12 can be adjusted, so that the atomization deposition chamber 12 is in a protective atmosphere, and the metal source 1, the metal droplet 6, the deposition billet 9, and the like are prevented from being affected by an ambient gas.
In an implementation manner, the side wall of the aerosol deposition chamber 12 connected to the powder collection device 13 is funnel-shaped, so that the residual powder slides down the side wall of the aerosol deposition chamber 12 and is collected in the powder collection device 13.
In a practical mode, the plasma 5 atomization deposition equipment further comprises an observation window 7, and the observation window 7 is used for monitoring the whole process of plasma 5 atomization deposition by related workers.
In the embodiment, the plasma atomization deposition equipment comprises an atomization deposition cabin, a depositor and at least one plasma source, wherein a nozzle of the plasma source is arranged in the atomization deposition cabin and faces to the tail end of the metal source, and the plasma source is used for spraying plasma to the metal source so that the metal source is atomized to form metal droplets under the action of the plasma; the depositor is arranged in the atomization deposition cabin, is positioned below the plasma source and is used for receiving the metal molten drops formed by atomization to form a deposition billet. The plasma is sprayed to the metal source through the plasma source, so that the metal source directly absorbs the heat energy of the plasma under the action of the plasma, metal droplets are formed by instant solid atomization, and the metal droplets spread on the depositor under the action of the kinetic energy and gravity of the plasma, compared with the mode that the metal source is melted into metal liquid firstly, and then the metal liquid is crushed, atomized and sprayed through high-pressure gas, the characteristic of rapid solidification of the traditional spray deposition technology is kept, fine rapid solidification structures can be obtained, and simultaneously, the macrosegregation is inhibited, so that the comprehensive performance of the material is improved, the particle size of the metal droplets formed by directly atomizing the metal source through the plasma is smaller, the distribution range is narrower, the hollow rate is extremely low, the surface quality of billets formed after fine semi-solid molten droplets are deposited and formed can be obviously improved, the requirement of near-net forming is met, meanwhile, the solid-liquid content of the metal droplets can be basically kept consistent due to the narrow particle size distribution range, the solid-liquid content of the metal droplets is more controllable, when the deposition layers are splashed and stacked, the probability of the blank deposition layers is lower, the porosity and porosity of the blank is reduced, the problem of the existing spray deposition technology that the deposition quality is improved is effectively.
Further, the present invention also provides a plasma atomization deposition method, in an embodiment of the plasma atomization deposition method, referring to fig. 6, the plasma atomization deposition method employs the plasma atomization deposition apparatus described above, including the following steps:
s10, atomizing a metal source through at least one plasma source to form metal molten drops, wherein the metal source is solid;
in the embodiment, specifically, high-temperature and high-speed plasma jet is formed by high-temperature plasma generated by at least one plasma source, and the high-temperature and high-speed plasma jet is sprayed to the metal source through the nozzle, so that the metal source is atomized to form metal droplets with fine and uniform sizes under the action of the plasma.
Optionally, the particle size D50 of the metal droplets is 30-40 μm.
In this embodiment, compared with the conventional gas atomization spray deposition process, metal droplets with the same particle size are formed by atomization, and the plasma atomization deposition equipment provided by the application can save the gas consumption by more than 2/3.
In an implementation mode, the temperature of the plasma jet can reach more than 10000K, compared with the traditional spray forming process, the plasma atomization deposition equipment provided by the invention can be suitable for deposition forming of refractory metals or alloys, and has a wider application range, wherein the metal source is solid.
Optionally, the metal source comprises a metal wire, a metal rod, or a metal powder.
In this embodiment, since the metal source is only supplied as a raw material, and does not need to serve as an electrode or have other functions, the form of the metal source has more selectivity, including but not limited to a metal wire, a metal rod, a metal powder, or the like; the metal source can be a single kind of metal or an alloy; the metal source is erected in the atomization deposition cabin through a fixing device or a material conveying device, and is erected above the depositor in a use state, and the tail end of the metal source can be in direct contact with plasma sprayed by the plasma source. Compared with the traditional spray forming technology in which molten metal needs to contact a crucible and a flow guide pipe, the plasma spray deposition equipment provided by the invention can realize non-contact atomization, thereby avoiding pollution to the molten metal in the atomization process, being applicable to deposition forming of active metal or alloy, having wider application range, effectively avoiding the defects of back spray, flow guide pipe blockage, low superheat degree of the molten metal and the like associated with the traditional gas atomization process in a mode that plasma is sprayed by a plasma source and the metal source directly contact with each other, having higher process forming stability, and simultaneously adopting a solid feeding mode, being more controllable compared with the molten metal, and realizing the on-stop on-demand adjustment in the forming process and the forming of blanks with more shapes in three-dimensional space.
In an implementation manner, the atomizing the metal source by at least one plasma source to form the metal droplets, wherein the step of using the metal source as a solid further includes: and carrying out preheating treatment on the metal source.
And S20, receiving the metal molten drops formed by atomization through a depositor to form a deposition billet.
In the embodiment, specifically, the metal droplets formed by atomization are received by a depositor to form at least one deposited layer, and the deposited layers are deposited layer by layer to form a deposited billet.
Optionally, the step of receiving the atomized metal droplets by a depositor to form a deposition billet comprises:
step S21 of adjusting an initial position and/or an initial tilt angle of the depositor;
and S22, controlling the depositor to move based on a preset moving path, a preset rotating angle, a preset moving speed and/or a preset rotating speed, and receiving the metal molten drops formed by atomization to form a deposition billet.
In this embodiment, specifically, the initial position and/or the initial tilting angle of the depositor are adjusted, the depositor is controlled to move based on a preset moving path, a preset rotating angle, a preset moving speed and/or a preset rotating speed, and the metal droplets formed by atomization are received to form a deposition billet.
In an implementation manner, in the process of plasma atomization deposition, when a second deposition layer is to be processed on a first deposition layer after the first deposition layer of the ingot is processed, the depositor may be moved in a direction away from the plasma source to maintain a fixed deposition distance, so that the second deposition layer may be processed under the same process conditions as those for processing the first deposition layer, thereby reducing a cumbersome process of adjusting the process conditions.
In an implementation manner, referring to fig. 4, during the plasma atomization deposition process, a flat plate-shaped depositor can be adopted, and the depositor can be translated in a horizontal plane and/or rotated around a fixed point or a fixed axis in space so as to avoid that metal droplets form a similar cone-shaped body with a gaussian distribution on the depositor, and further, the deposition forming of deposition billets with different thicknesses and step-shaped flat plates can be realized by adjusting the horizontal moving speed and/or the reciprocating motion frequency of the depositor.
In an implementation manner, referring to fig. 5, during the process of plasma atomization deposition of the tubular deposition billet, a tubular or cylindrical depositor can be adopted, and the depositor can be axially translated and/or rotated along the central shaft, so that the deposition forming of the tubular deposition billet can be realized, and further, the deposition forming of the tubular deposition billet with different outer diameters or different outer diameters can be realized by adjusting the axial translation speed and/or the rotation speed.
In an implementation manner, after the step of forming the deposition billet, the deposition billet is solidified and cooled in the atomized deposition chamber, and then the cooled deposition billet and the depositor are taken out together from the atomized deposition chamber, and then the deposition billet and the depositor are separated, so that a final product is obtained.
The plasma atomization deposition method provided by the application solves the technical problem that the porosity of a billet prepared by spray deposition in the prior art is high. Compared with the prior art, the gas protection device of the ultra-large plasma atomization deposition device provided by the embodiment of the invention has the same beneficial effects as the plasma atomization deposition method of the embodiment, and the detailed description is omitted here.
The above description is only a preferred embodiment of the present application, and not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings, or which are directly or indirectly applied to other related technical fields, are included in the scope of the present application.
Claims (10)
1. A plasma atomizing deposition apparatus, characterized in that it comprises an atomizing deposition chamber, a depositor and at least one plasma source, wherein,
the nozzle of the plasma source is arranged in the atomization deposition cabin, and the plasma source is used for spraying plasma to the metal source so that the metal source is atomized to form metal molten drops under the action of the plasma;
the depositor is arranged in the atomization deposition cabin, is positioned below the plasma source and is used for receiving the metal molten drops formed by atomization to form a deposition billet.
2. The plasma atomizing deposition apparatus of claim 1, wherein the plasma atomizing deposition apparatus further comprises:
a metal source conveying device for conveying the metal source into the atomized deposition chamber
And/or a metal source preheating device used for carrying out preheating treatment on the metal source.
3. The plasma atomizing deposition apparatus of claim 1, wherein the plasma source is a non-transferred arc plasma torch comprising a plasma torch housing, a cathode, an anode, a first gas inlet passage, and a nozzle, wherein,
the cathode and the anode are disposed within the plasma torch housing for generating a plasma arc;
the first gas inlet passage penetrates through the plasma torch shell, is connected with an inert gas source and the plasma torch and is used for introducing inert gas into the plasma torch;
the nozzle is arranged on the plasma torch shell and used for ejecting plasma from the interior of the plasma torch shell.
4. The plasma atomizing deposition apparatus of claim 3, wherein the nozzle is of a converging or Laval configuration.
5. The plasma atomizing deposition apparatus of claim 1, further comprising a powder collecting device disposed at a bottom of the atomizing deposition chamber for collecting residual powder solidified in an area outside the depositor.
6. The plasma atomizing deposition apparatus of claim 1, wherein the plasma atomizing deposition apparatus further comprises:
the second air inlet passage penetrates through the shell of the atomization deposition chamber, is connected with an inert gas source and the atomization deposition chamber, and is used for introducing inert gas into the atomization deposition chamber;
and/or the air outlet passage penetrates through the atomization deposition cabin shell of the atomization deposition cabin, is connected with the vacuum filtering device and the atomization deposition cabin, and is used for pumping out the gas in the atomization deposition cabin.
7. A plasma atomization deposition method, which adopts the plasma atomization deposition apparatus according to any one of claims 1 to 6, and comprises the steps of:
atomizing a metal source through at least one plasma source to form metal molten drops, wherein the metal source is solid;
and receiving the atomized metal droplets by a depositor to form a deposition billet.
8. The plasma atomizing deposition method of claim 7, wherein said step of forming a deposition billet by receiving said droplets of metal formed by atomization through a depositor comprises:
adjusting an initial position and/or an initial tilt angle of the depositor;
and controlling the depositor to move based on a preset moving path, a preset rotating angle, a preset moving speed and/or a preset rotating speed, and receiving the atomized metal molten drops to form a deposition billet.
9. The plasma atomizing deposition method of claim 7, wherein the metal source comprises a wire, a metal rod, or a metal powder.
10. The plasma atomizing deposition method according to any one of claims 7 to 9, wherein the metal droplets have a particle diameter D50 of 30 to 40 μm.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101699928A (en) * | 2009-10-27 | 2010-04-28 | 中国科学技术大学 | Anode for non-transferred arc plasma torch and plasma torch |
| CN102389979A (en) * | 2011-10-13 | 2012-03-28 | 西北工业大学 | Method and system for preparing particle-reinforced metal-based composite material through injection molding |
| CN103429354A (en) * | 2010-12-22 | 2013-12-04 | 火焰喷射工业股份有限公司 | Improved thermal spray method and apparatus using plasma transferred wire arc |
| CN103769594A (en) * | 2013-11-25 | 2014-05-07 | 王利民 | Technological method and device for preparing high-purity spherical superfine/nanoscale powdered materials in plasma atomization mode |
| CN105682334A (en) * | 2016-02-03 | 2016-06-15 | 中国科学技术大学先进技术研究院 | Arc plasma reactor device |
| CN106378460A (en) * | 2016-09-22 | 2017-02-08 | 成都优材科技有限公司 | Plasma atomization method and apparatus for preparing pure titanium or titanium alloy powder |
| CN107175337A (en) * | 2017-05-22 | 2017-09-19 | 加拿大艾浦莱斯有限公司 | A kind of metal powder preparation method and its device based on plasma atomization technique |
| CN113290250A (en) * | 2021-06-01 | 2021-08-24 | 山东增材工业技术研究院有限公司 | Melt atomization preparation method of high-entropy alloy powder |
-
2022
- 2022-07-21 CN CN202210860169.9A patent/CN115194170A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101699928A (en) * | 2009-10-27 | 2010-04-28 | 中国科学技术大学 | Anode for non-transferred arc plasma torch and plasma torch |
| CN103429354A (en) * | 2010-12-22 | 2013-12-04 | 火焰喷射工业股份有限公司 | Improved thermal spray method and apparatus using plasma transferred wire arc |
| CN102389979A (en) * | 2011-10-13 | 2012-03-28 | 西北工业大学 | Method and system for preparing particle-reinforced metal-based composite material through injection molding |
| CN103769594A (en) * | 2013-11-25 | 2014-05-07 | 王利民 | Technological method and device for preparing high-purity spherical superfine/nanoscale powdered materials in plasma atomization mode |
| CN105682334A (en) * | 2016-02-03 | 2016-06-15 | 中国科学技术大学先进技术研究院 | Arc plasma reactor device |
| CN106378460A (en) * | 2016-09-22 | 2017-02-08 | 成都优材科技有限公司 | Plasma atomization method and apparatus for preparing pure titanium or titanium alloy powder |
| CN107175337A (en) * | 2017-05-22 | 2017-09-19 | 加拿大艾浦莱斯有限公司 | A kind of metal powder preparation method and its device based on plasma atomization technique |
| CN113290250A (en) * | 2021-06-01 | 2021-08-24 | 山东增材工业技术研究院有限公司 | Melt atomization preparation method of high-entropy alloy powder |
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