CN115189556A - High-power SiC power module drive circuit - Google Patents
High-power SiC power module drive circuit Download PDFInfo
- Publication number
- CN115189556A CN115189556A CN202210580340.0A CN202210580340A CN115189556A CN 115189556 A CN115189556 A CN 115189556A CN 202210580340 A CN202210580340 A CN 202210580340A CN 115189556 A CN115189556 A CN 115189556A
- Authority
- CN
- China
- Prior art keywords
- pin
- power supply
- resistors
- driving
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002955 isolation Methods 0.000 claims abstract description 90
- 238000005070 sampling Methods 0.000 claims abstract description 37
- 239000003990 capacitor Substances 0.000 claims description 105
- 230000003287 optical effect Effects 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000004088 simulation Methods 0.000 claims description 6
- 230000000087 stabilizing effect Effects 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 230000002457 bidirectional effect Effects 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 36
- 229910010271 silicon carbide Inorganic materials 0.000 description 35
- 238000010586 diagram Methods 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
The invention belongs to the technical field of motor controllers and discloses a high-power SiC power module driving circuit. The double-end isolation driving power supply is adopted, the negative pressure is shortened, the false conduction caused by crosstalk can be effectively inhibited, and the double-end isolation driving power supply has good reliability and anti-electromagnetic interference performance; meanwhile, a bus voltage sampling circuit and a phase current sampling circuit are integrated, so that the power hardware structure of the electric drive system is greatly simplified, and the integrated and efficient design of the electric propulsion drive motor controller is very friendly. The SiC power device driving circuit consists of a driving pre-stage circuit, a double-end isolation driving power circuit, an isolation sampling circuit and a driving and protecting circuit.
Description
Technical Field
The invention belongs to the technical field of motor controllers, and particularly relates to a high-power SiC power module driving circuit.
Background
The electric propulsion system provides energy for the airplane and power for overcoming resistance to enable the airplane to fly, and mainly comprises a battery pack, a motor, a controller, a propeller and the like. The battery pack converts chemical energy into electric energy to provide energy required by the airplane; the electric motor converts the electric energy into mechanical energy, and the controller controls the output power required by different flight states; the propeller provides flight power for the aircraft.
The motor controller of the electric propulsion driving system is an important device for realizing electric energy conversion and is used for controlling the high-efficiency and high-reliability operation of the electric propulsion driving motor. The power conversion part mainly comprises a power switch tube, a power switch tube grid driving circuit, a voltage and current transformer and the like. Therefore, in order to realize the efficient and reliable operation of the electric propulsion driving motor, the problem of reliable driving of the power tube under the condition of high power must be considered.
The silicon carbide (SiC) power device has the characteristics of high power density, high temperature resistance, high frequency and low loss as a novel power device with development potential, has the advantage of excellent heat conductivity coefficient, can greatly reduce the design size of a radiator, has important significance for improving the power density of the whole machine, reducing the volume and weight of equipment and reducing a heat dissipation system, and particularly has wide attention of people in the aviation field with strict requirements on the power-to-weight ratio of the system. Compared with a Si-based power device, in a traditional hardware switching topological structure, a rapid switching transient process of the SiC power device is more sensitive to parasitic parameters and needs to bear larger electrical stress. The SiC power device has some parasitic parameters, including internal parasitic capacitance, internal parasitic inductance on three pins, grid resistance and the like, and the influence of the parasitic parameters is considered for model building of the SiC power device. The driving high level voltage of the Si-based power device is generally 12V to 15V, and the low level voltage is 0V. The MOS channel part of the SiC device has lower mobility, the channel resistance is higher than that of the Si-based device, the required grid drive voltage is higher so as to obtain lower on resistance, and the drive high level required by the SiC device is 15-20V and the low level is-5-0V. In addition, since the SiC device has a smaller gate charge than a general Si device, the driving power required is also smaller. Therefore, a driving circuit of the conventional Si device cannot be directly used for driving the SiC device, and a special design is required.
At present, the mature products in the market of the SiC power module driving module are few, and various large driver manufacturers at home and abroad are developing SiC related products, so that the application of the SiC power module is greatly limited. Therefore, the design of an integrated SiC driver with good performance and economy is of great significance.
Disclosure of Invention
The invention aims to provide a high-power SiC power module driving circuit aiming at the defect that the application of the existing SiC power module is greatly limited, so as to solve the problem of reliable driving of a SiC power device when the SiC power device is applied to a motor controller.
A SiC power module driver circuit, the driver circuit comprising: an upper tube driving circuit and a lower tube driving circuit;
the upper tube driving circuit includes: a primary side sub-circuit on the left side of the driving chip U401 and a secondary side sub-circuit on the right side of the driving chip U401;
a pin 1 of the driving chip U401 is connected with a control power supply 5V _Q, and pins 3-6 are connected with a control power supply ground GND _ Q; a 14 pin is connected with a positive output +15V _UPof a driving power supply, a 10 pin is connected with a ground GND _ UP of the driving power supply, and a 15 pin is connected with a negative output-4V _UPof the driving power supply;
the primary side sub-circuit comprises: a pull-down resistor R413, a fault signal pull-up resistor R414, a filter resistor R415, a filter capacitor C403, and buffer and high-frequency filter capacitors C401 and C402; one end of a resistor R415 is connected with the positive electrode of the PWM input signal, the other end of the resistor R415 is connected with a pin 7 of the driving chip U401, two ends of the resistor R414 are respectively connected with a pin 1 and a pin 8, two ends of a resistor R413 are respectively connected with a pin 3 and a pin 7, and a capacitor C403 is connected with the resistor R413 in parallel; the capacitors C401 and C402 are connected in parallel, and two ends of the capacitors are respectively connected with a pin 1 and a pin 3;
the secondary side sub-circuit includes: a clamping diode D401, voltage-stabilizing tubes D402-D407, D408, D409 and D410, on/off grid resistors R417-R420 and R421-R424, voltage-dividing resistors R402-R410, resistors R401, R411, R412, R416 and R425, buffer capacitors C405-C408 and capacitors Ccs1, ccs2 and C404;
one end of the resistor R401 is connected with the 11 pin of the driving chip U401, and the other end of the resistor R401 is connected with the upper tube drain electrode after being sequentially connected with the resistors R402-R410 in series; the other end of the resistor R401 is also connected with a resistor R412 in series to be connected with a driving power ground, and a capacitor Ccs2 is connected with the resistor R412 in parallel; the voltage-regulator tubes D402-D407 are connected in series in the same direction, the tail end of the voltage-regulator tube D407 is connected with the drain electrode of the upper tube, the anode of the voltage-regulator tube D402 is connected with the anode of the voltage-regulator tube D408, one end of the resistor R411 is connected between the anode of the voltage-regulator tube D402 and the anode of the voltage-regulator tube D408, the other end of the resistor R411 is connected with the anode of the clamping diode D401, and the cathode of the clamping diode D401 is connected with the 11 pin of the driving chip U401; the capacitor Ccs1 is connected with the resistor R411 in parallel; the cathode of the voltage regulator tube D409 is connected with the anode of the voltage regulator tube D408, the anode of the voltage regulator tube D409 is connected with a pin 15 of the driving chip U401, and the resistor R416 is connected with the voltage regulator tube D409 in parallel; the cathode of the voltage-stabilizing tube D408 is connected with the anode of the voltage-stabilizing tube D410 and the grid of the upper tube, and the cathode of the voltage-stabilizing tube D410 is connected with the 14 pin of the driving chip U401;
the capacitors C405 and C406 are connected in parallel between pins 14 and 10 of the driving chip U401; the capacitor C407 and the capacitor C408 are connected in parallel between the 15 pin and the 10 pin of the driving chip U401;
the capacitor C404 is connected in parallel between the 12 pins and the 13 pins of the driving chip U401;
the resistors R417-R420 are grid opening resistors, one end of the resistors is connected with the 14 pins of the driving chip U401 after being connected in parallel,
the resistors R421-R424 are gate turn-off resistors, and after being connected in parallel, one end of each resistor is connected with the 16 pins of the driving chip U401,
the other ends of the resistors R417-R424 are connected with the upper tube grid;
the resistor R425 is connected between the grid of the upper tube and the 15 pins of the driving chip U401;
the source electrode of the upper tube is connected with a pin 10 of the driving chip U401;
the lower tube driving circuit comprises a driving chip U402, and the rest of the connection relation of the lower tube driving circuit is the same as that of the upper tube driving circuit except that the input signal is the negative pole of the PWM input signal.
Further, the voltage stabilizing tube D7 is a bidirectional voltage stabilizing tube.
Further, the driving circuit further includes: a fault signal sub-circuit;
the fault signal subcircuit includes: a logic chip U403, a filter capacitor C416 and a bypass capacitor C413;
the capacitor C413 is connected in parallel between the pin 6 and the pin 3 of the logic chip U403, and the pin 4 and the pin 2 of the logic chip U403 are connected with the pin 8 of the driving chip U401 and the pin 8 of the driving chip U402 simultaneously after being short-circuited so as to receive a fault signal;
the capacitor C416 is connected between the 4 pins of the logic chip U403 and the control power ground;
Further, the driving circuit further includes: driving a preceding stage sub-circuit;
the driving pre-stage sub-circuit includes: the optical coupling isolation circuit unit and the logic circuit unit;
the optical coupling isolation circuit unit includes: an isolation optocoupler 101, current limiting resistors R101, R103, R104 and R106, filter resistors R102 and R105, filter capacitors C104 and C15 and filter capacitors C101 and C102;
one ends of the resistors R104 and R106 are respectively connected with the 4 pin and the 3 pin of the isolation optocoupler U101, and the other ends of the resistors R104 and R106 are connected with the B-path PWM wave differential signal;
one ends of the resistors R102 and R105 are respectively connected with the pin 7 and the pin 6 of the isolation optocoupler U101, and the other ends of the resistors R102 and R105 are used as the output of the isolation optocoupler U101;
the capacitor C104 and the capacitor C105 are respectively connected in parallel with the output ends of the resistors R102 and R105 and grounded;
the capacitor C101 and the capacitor C102 are connected in parallel between the pin 8 and the pin 5 of the isolation optocoupler U101;
the logic circuit unit includes: a dual-channel inverter U102;
Further, the driving circuit further includes: an isolation circuit unit;
the isolated power supply unit includes: the power supply comprises a power supply chip U303, a power supply chip U304, enabling resistors R314, R315, R316 and R317, filter capacitors C307-C310 and C311-C314;
A pin 1 of the power supply chip U304 is connected with a power supply +15V, a pin 2 is connected with an input power supply ground, and the resistors R316 and R317 are connected between the power supply +15V and the input power supply ground after being connected in series; a pin 3 of the power supply chip U304 is connected between the resistors R316 and R317, and a pin 5 is an output of the isolation power supply 5VQ 2; c313 and C314 are connected in parallel between the power supply 5VQ2 and QGND 2.
Further, the driving circuit further includes: a bus voltage sampling unit;
the bus voltage sampling unit includes: the circuit comprises an isolation operational amplifier U301, sampling resistors R301-R305, R310 and R311, filter capacitors C301, C302 and C303, and resistors R306 and R309;
the 1 pin and the 4 pins of the operational amplifier isolation U301 are respectively connected with an isolation power supply 5VQ1 and a QGND1 ground, the 3 pin of the isolation operational amplifier U301 is also connected with the QGND1, the 8 pin and the 5 pin are respectively connected with an analog 5V power supply and an analog ground, one end of a resistor R301 is positively connected with a bus, the other end of the resistor R301 is connected with resistors R302, R303 and R304 in series and then connected with the 2 pin of the isolation operational amplifier U301, and a resistor R305 is connected with the R304 in parallel;
after the resistors R310 and R311 are connected in parallel, one end of the resistor R is connected with the pin 2 of the isolation operational amplifier U301, and the other end of the resistor R is connected with a bus ground QGND1;
one end of the capacitor C301 is connected with the pin 2 of the isolation operational amplifier U301, the other end of the capacitor C301 is connected with a bus ground QGND1, the capacitor C302 is connected between the pin 1 of the isolation operational amplifier U301 and the bus ground QGND1, and the capacitor C303 is connected between the pin 8 of the isolation operational amplifier U301 and the analog ground;
the resistors R306 and R309 are respectively connected with the pin 7 and the pin 6 of the isolation operational amplifier U301, and the other end of the resistor is used as a differential signal output;
further, the driving circuit further includes: a phase current sampling unit;
the phase current sampling unit includes: the circuit comprises a current divider, an isolation operational amplifier U302, sampling resistors R307 and R313, a filter capacitor C306, bypass capacitors C304 and C305, and resistors R308 and R312;
the current divider is used for collecting the current of the bus,
the 1 pin and the 4 pins of the isolation operational amplifier U302 are respectively connected with an isolation power supply 5VQ2 and a ground QGND2, the 8 pin and the 5 pin are respectively connected with a simulation 5V power supply and a simulation ground, one ends of resistors R307 and R311 are respectively connected with a shunt, the other ends of the resistors are respectively connected with the 2 pins and the 3 pins of the isolation operational amplifier U302, a C306 is connected between the 2 pins and the 3 pins in parallel, a capacitor C304 is connected with the 1 pin and the 4 pin, and a capacitor C305 is connected with the 8 pin and the simulation ground; one end of each of the resistors R308 and R312 is connected with the pin 7 and the pin 6 of the isolation operational amplifier U302, and the other end of each of the resistors R308 and R312 is used as a differential signal output.
Further, the driving circuit further includes: a double-ended isolated drive power supply sub-circuit;
the double-ended isolation driving power supply sub-circuit comprises: the power supply comprises a push-pull power supply driving converter U202, a double-end output transformer U201, a BAV70 diode D201, a TL431 voltage regulator tube Q201, filter capacitors C201, C202, C203, C204, C205, C206 and C207, a current limiting resistor R201 and voltage regulating resistors R202 and R203;
pins 5 and 2 of the push-pull power supply driving converter U202 are connected with +5V input, and pins 1 and 3 are used as the output of the push-pull power supply driving converter U202 and are connected with pins 3 and 1 of the double-end output transformer U201; a pin 2 of the double-end output transformer U201 is connected with a +5V input, pins 4 and 6 of the double-end output transformer U201 are connected with a pin 1 and a pin 2 of the BAV70 diode D201, and a pin 5 of the double-end output transformer U201 serves as an output power supply of-4V; one end of each of the resistors C204, C205 and C206 is connected with a power supply plus 15V, the other end of each of the resistors C204, C205 and C206 is connected with a power supply minus 4V, one end of the resistor R201 is connected with the power supply plus 15V, the other end of the resistor R201 is connected with a pin 1 of the TL431 voltage-regulator tube Q201, and a pin 3 of the TL431 voltage-regulator tube Q201 is connected with the power supply minus 4V; one end of the capacitor C203 is connected with +15V of a power supply, and the other end of the capacitor C is connected with GND _ UP in a driving mode; one end of the capacitor C207 is connected with a power supply of-4V, and the other end of the capacitor C207 is connected with GND _ UP in a driving mode; pin 2 of the TL431 regulator Q201 is connected to GND _ UP driving ground through a resistor R202, and pin 2 of the TL431 regulator Q201 is also connected to power-4V through a resistor R203.
The invention designs a drive device suitable for a SiC power device and a drive design method thereof aiming at the problem that the application of the SiC power device in the electric propulsion technology is greatly limited because the mature products of the SiC power module drive module in the market are few, so as to improve the problems in the prior art.
The invention provides a high-power SiC driving integrated circuit which comprises functions of SiC driving, bus voltage sampling, phase current sampling and the like. The test result shows that: the driving module has a good driving effect, is low in input and output delay, and can reliably drive the SiC power module to operate.
Drawings
FIG. 1 is a schematic diagram of a driving front stage sub-circuit;
FIG. 2 is a schematic diagram of a dual-ended isolated drive power supply sub-circuit;
FIG. 3 is a schematic diagram of bus voltage sampling and phase current sampling;
FIG. 4 (a) is a schematic diagram of an upper tube driving circuit, and FIG. 4 (b) is a schematic diagram of a lower tube driving circuit;
FIG. 5 is a schematic diagram of SiC drive supply waveform (left) and load-voltage curve (right) at full load;
FIG. 6 SiC drive test waveform diagrams;
FIG. 7 is a graph of SiC drive test waveforms magnified 1000 times in the time axis;
fig. 8 is a waveform diagram of a double pulse drive test of the SiC power module at a voltage of 540 v.
Detailed Description
The invention provides a high-power SiC power device driving circuit. The circuit has a compact structure and small size, adopts a double-end isolation driving power supply, can effectively inhibit false conduction caused by crosstalk when the negative voltage is short, and has good reliability and anti-electromagnetic interference; meanwhile, a bus voltage sampling circuit and a phase current sampling circuit are integrated, so that the power hardware structure of the electric drive system is greatly simplified, and the integrated and efficient design of the electric propulsion drive motor controller is very friendly.
The SiC power device driving circuit consists of a driving pre-stage circuit, a double-end isolation driving power circuit, an isolation sampling circuit and a driving and protecting circuit.
1. Driving preceding stage circuit
The drive preceding stage circuit consists of an optical coupling isolation circuit and a logic circuit, the optical coupling isolation circuit realizes the isolation of a drive control signal and a drive signal, and the input end adopts a differential mode to improve the common-mode interference resistance of the drive control signal and further ensure the reliable input of the drive control circuit; the logic circuit performs inversion processing on the logic of the isolation circuit on one hand, and performs shaping processing on the driving signal on the other hand. The principle of driving the preceding stage circuit is shown in fig. 1.
The optical coupler isolation circuit is composed of an HCPL-0738 isolation optical coupler U101, current limiting resistors R101, R103, R104 and R106, filter resistors R102 and R105, filter capacitors C104 and C15, and filter capacitors C101 and C102. Wherein, the pins 8 and 5 of the U101 are respectively connected with a control power supply and a control power supply ground; one ends of the resistors R101 and R103 are respectively connected with a pin 1 and a pin 2 of the U101, and the other ends of the resistors R101 and R103 are connected with a positive terminal PWMA and a negative terminal PWMA of a differential control signal; one ends of the R104 and the R106 are connected with the 4 pins and the 3 pins, and the other ends of the R104 and the R106 are connected with the positive terminal PWMB and the negative terminal PWMB of the differential control signal; r102 and R105 are respectively connected with pin 7 and pin 6 of U101 and are output by an optical coupler circuit, and C104 and C105 are respectively connected in parallel between the two output ends and a control power ground and form a low-pass filter circuit with R102 and R105.
The logic circuit performs inversion processing on the logic of the isolation circuit on one hand, and performs shaping processing on the driving signal on the other hand. The function of the inverter is realized by an SN74LVC2G04 double-channel inverter U102, a pin 1 and a pin 3 of the U102 are two input ends of the inverter, are connected with the other ends of R102 and R105 and are connected with the other ends of C104 and C105; the corresponding output ends of the pin 6 and the pin 1 of the U102 are connected with a driving circuit for controlling an upper switching tube and a lower switching tube. And C103 is a power supply filter capacitor which is respectively connected with the control power supply and the control power supply ground.
2. Double-end isolation driving power circuit
The double-end isolation driving power circuit realizes the isolation DC-DC conversion function of inputting 5V, outputting plus 15V and minus 4V, and provides an isolation power supply for the SiC power device driving circuit. The scheme of the double-end isolation driving power supply circuit adopts a push-pull DC-DC isolation converter, a controller selects a TI company SN5605B push-pull power supply driving converter which is a low-noise, low-EMI and push-pull transformer driver, and a special grid is designed for a small isolation power supply. The device drives a thin transformer with a tap in the middle by a 2.25V-5V DC power supply. The isolation transformer adopts a double-end output transformer with the WE company model number of 750317722, the primary input voltage is 5V, and the output voltage is 19V. The output plus 15V and minus 4V are realized by rectifying with a BAV70 diode and precisely stabilizing with TL 431. And finally, indicating the output of the two-way power supply by adopting a light-emitting diode. The circuit principle is shown in fig. 2.
The double-end isolation driving power supply circuit consists of an SN5605B push-pull type power supply driving converter U202, a 750317722 double-end output transformer U201, a BAV70 diode D201, a TL431 voltage regulator tube Q201, filter capacitors C201, C202, C203, C204, C205, C206 and C207, current limiting resistors R201, R204 and R205, voltage regulating resistors R202 and R203 and indicator lamps LD201 and LD 202. Wherein pins 5 and 2 of U202 are connected to the 5V input and pins 1 and 3 are connected as the output of U202 to pins 3 and 1 of U201. Pin 2 of U1 is connected to the 5V input, pins 4 and 6 of U201 are connected to pins 1 and 2 of D201, and pin 5 is used as the output power supply-4V. Pin 3 of D201 is +15V as the output power. One end of each of the C204, the C205, the C206, the R201, the R204 and the C203 is connected with a power supply of +15V. One end of the 3 pins of C204, C205, C206 and Q201, R203, R205 and C207 is connected with a power supply of-4V. One end of C202, C207, LD201, LD202 is connected with output ground.
The double-end isolation driving power supply circuit consists of an SN5605B push-pull type power supply driving converter U202, a 750317722 double-end output transformer U201, a BAV70 diode D201, a TL431 voltage regulator tube Q201, filter capacitors C201, C202, C203, C204, C205, C206 and C207, current limiting resistors R201, R204 and R205, voltage regulating resistors R202 and R203 and indicator lamps LD201 and LD 202. Wherein, the 5 pin and the 2 pin of the control chip U202 are connected with the 5V input, and the 1 pin and the 3 pin are used as the output of the U202 and are connected with the 3 pin and the 1 pin of the U201; c201 and C202 are used as power supply filter capacitors and are respectively connected with an input power supply 5V and an input power supply ground GND _ IN; and a pin 2 of the U201 is connected with a 5V input, pins 4 and 6 of the U201 are connected with a pin 1 and a pin 2 of the D201, and a pin 5 is connected with an output power supply-4V _UP. Pin 3 of D201 is connected to output power +15v _up. C204, C205 and C206 are used as rectification filter capacitors, wherein one end of each rectification filter capacitor is connected with an output power supply +15V _UP, and the other end of each rectification filter capacitor is connected with an output power supply-4V _UP; r201, R202, R203 and Q201 form a precise voltage regulation subcircuit, wherein R201 is connected with an output power supply +15V _UP, and the other end is connected with a pin 1 of a precise voltage-stabilizing tube Q201; the pin 3 of the precision voltage-stabilizing tube Q201 is connected with an output power supply-4V _UP; c203 and C207 are used as supporting capacitors of the output power supply, wherein one end of the C203 is connected with the +15V _UPof the output power supply, one end of the C207 is connected with the-4V _UPof the output power supply, and the other ends of the C207 and the C203 are both connected with GND _ UP in a driving way; one end of the R202 is connected with a GND _ UP driving ground, and the other end of the R202 is connected with the R203 and a pin 2 of the precision voltage regulator tube Q201, so that the stability of output voltage is realized; the other end of R203 is connected with an output power supply-4V _UP.
3. Sampling circuit
The sampling circuit mainly comprises a bus voltage sampling circuit, a phase current sampling circuit and a corresponding isolation power supply circuit. And the bus voltage sampling and the phase current sampling adopt isolated operational amplifier, so that the anti-interference capability of signals is improved. The schematic circuit diagram is shown in fig. 3.
The power supplies of the bus voltage sampling and phase current sampling circuits are isolated from each other. The isolation power supply circuit consists of TPS70950 power supply chips U303 and U304, enabling resistors R314, R315, R317 and R316, filter capacitors C307-C310 and C311-C314. In the bus voltage sampling isolation power supply circuit, a pin 1 of a power supply chip U303 is connected with an input power supply +15V, a pin 2 is connected with an input power supply ground, R314 and R315 are connected in series, two ends of the power supply chip U303 are respectively connected with the power supply +15V and the corresponding ground, a pin 3 of the U303 chip is connected with the other ends of the R314 and the R315, a pin 5 is used for outputting a bus voltage isolation power supply 5VQ1, and C307 and C308 are connected in parallel and between the power supply 5VQ1 and QGND 1. In the phase current sampling isolation power supply circuit, a pin 1 of a power supply chip U304 is connected with an input power supply +15V, a pin 2 is connected with an input power supply ground, R317 and R316 are connected in series, two ends of the power supply chip U304 are respectively connected with the power supply +15V and the corresponding ground, a pin 3 of the U304 chip is connected with the other ends of R314 and R315, a pin 5 is used for outputting of a bus voltage isolation power supply 5VQ2, and C313 and C314 are connected in parallel between the power supply 5VQ2 and QGND 2.
The bus voltage sampling circuit collects bus voltage in a voltage division mode, and the ACPL-C87B isolates the operational amplifier U301; the voltage sampling resistor comprises voltage sampling resistors R301-R305, R310 and R311, filter capacitors C301, C302 and C303, and resistors R306 and R309. The 1 pin and the 4 pin of the U301 are connected with an isolation power supply 5VQ1 and a QGND1 ground, the 3 pin is also connected with the QGND1 ground, the 8 pin and the 5 pin are connected with an input +5VA and an analog ground AGND, one end of the R301 is connected with a positive D _ UP of a bus, the other end of the R301 is connected with resistors R302, R303, R304 and R305 in series after being connected in parallel, the other end of the R301 is connected with a 2 pin of the U301 as a voltage input, the R310 and the R311 are connected in parallel, one end of the R301 is also connected with the 2 pin of the U301, the other end of the R301 is connected with the bus ground QGND1, one end of the C301 is connected with the 2 pin of the U301, and the other end of the C is connected with the bus ground QGND1; c302 is connected with pin 1 of U301, the other end is connected with a bus ground QGND1, C303 is connected with pin 8 to be used as a power supply filter capacitor, and the other end is connected with an analog ground AGND; r306 and R309 are connected to pins 7 and 6 of U301, respectively, with the other end outputting positive and negative for differential signals, respectively.
The phase current sampling circuit collects bus current through a shunt and consists of an AMC1302 isolation operational amplifier U302, current sampling resistors R307 and R313, filter capacitors C306, C304 and C305, and resistors R308 and R312. Pins 1 and 4 of the U302 are connected with the ground of an isolation power supply 5VQ2 and QGND2, pins 8 and 5 are connected with an analog +5VA and an analog ground AGND, one ends of R307 and R311 are connected with current signals SENSE1 and SENSE2 to be used as differential inputs, and the other ends of the R307 and R311 are respectively connected with pins 2 and 3 of the U302; c306 is connected in parallel to two ends of a pin 2 and a pin 3 of the chip U302; c304 is connected with pin 1 of U202, and C305 is connected with pin 8 of U302 to serve as a power supply filter capacitor; r308 and R312 are connected to pins 7 and 6 of U302, respectively, and the other ends are differential signal outputs current _ P and current _ N.
4. Drive circuit and protection circuit
The driving circuit adopts a SIC1182K driving IC of PI company, integrates the functions of short-circuit protection, power supply monitoring, active clamping, fault output and the like, can reach the capability of 8A driving current to the maximum extent, and can be suitable for driving a 1200V/600A power module without external push-pull. The circuit is two identical parts of circuits except for a fault signal circuit, and respectively drives an upper tube and a lower tube of the SIC, and the schematic diagrams are shown in fig. 4 (a) and fig. 4 (b). Taking the upper tube driving circuit as an example, the upper tube driving circuit is divided into a primary side sub-circuit on the left side and a secondary side sub-circuit on the right side by taking a driving chip U401 as a boundary, wherein a pin 1 of the U401 is connected with a control power supply 5V \uQ, pins 3 to 6 are integrated together and connected with a control power supply ground GND _ Q, a pin 14 is connected with a driving positive output power supply +15V \uUP, a pin 10 is connected with a driving power supply ground GND _ UP, and a pin 15 is connected with a driving negative output power supply-4V \uUP.
The primary side sub-circuit is simple in structure and comprises a pull-down resistor R413, a fault signal pull-up resistor R414, a filter resistor R415, a filter capacitor C403, and filter capacitors C401 and C402. One end of R415 is connected with a control input signal PWM _ UP _ IN, and the other end of R415 is connected with a pin 7 of the chip U401 as an input; two ends of the R414 are connected with the 1 pin and the 8 pin of the U401; the resistor R413 and the capacitor C403 are connected in parallel and are respectively connected with a pin 7 and a pin 3 of the U401; c401 and C402 are connected in parallel and are respectively connected with a pin 1 and a pin 3 of the U401.
The secondary side sub-circuit consists of a clamping diode D401, voltage-stabilizing tubes D402-D407, D408, D409 and D410, on/off grid resistors R417-R420 and R421-R424, voltage-dividing resistors R42-R410, resistors R401, R411, R412, R416 and R425, buffer capacitors C405-C408, capacitors Ccs1, ccs2 and C404. The circuit formed by the resistors R401-410 realizes the short-circuit detection function of the IGBT power module, the SNS pin provides the short-circuit current detection function during the conduction period, when the detected voltage reaches a threshold value, the power module is turned off, the resistors R402-R410 used for realizing the short-circuit detection function between the SNS pin and the drain electrode of the silicon carbide power module are used for realizing the short-circuit detection function, and the total resistance value of the resistors is 2.43 MOmega aiming at the 1200V silicon carbide power module; the high-level active clamp function is realized by a circuit formed by the R411, the R412, the R416, the D409, the Ccs1, the Ccs2 and the D402-D408. When the SNS module is turned off, if the current flowing into the SNS pin reaches a threshold value, the advanced active clamp is triggered, so that the driving current is gradually reduced to 20mA usually, the effect is far stronger than that of the basic active clamp provided by a TVS diode alone, and the total voltage limit provided by the TVS diode is set to 900V for a 1200V silicon carbide power module; d401 realizes the decoupling of overcurrent protection and advanced active clamping functions; both functions are realized by the 11 pins (SNS pins) of U401; in order to ensure that the grid voltage is stable and the limitation on the drain current during the short circuit period is realized, the grid is connected with a 14VISO pin through a Schottky diode D410, and the overvoltage protection function on the grid is realized; in order to avoid parasitic conduction caused by system electrification, the grid is connected with a driving ground through a 22K resistor R425, a bypass between the grid and the driving ground is formed, and the IGBT can be effectively and quickly turned off;
the resistor R401 is connected with the pin 11 of the chip U401, the R412 and the capacitor Ccs2 are connected between the other end of the R401 and the ground of the driving power supply in parallel, the R402-R410 are connected in series to form a resistor chain and are also connected at the position, and the other end of the resistor chain is connected with the drain electrode of the upper tube; voltage-stabilizing tubes D402-D407 (D407 is a bidirectional voltage-stabilizing tube) are connected in series in the same direction to form a chain, the tail end of D407 is connected with the drain electrode of the upper tube, the anode of D402 is connected with the anode of D408, a resistor R411 and a capacitor Ccs1 are connected in parallel at the position, the other end of the resistor R411 and a capacitor Ccs1 are connected with the anode of D401, the cathode of D401 is connected with the 11 pin of U401, meanwhile, resistors R416 and D409 are connected in parallel, the cathode of D409 is connected with the anode of D408, the anode is connected with a driving power supply of negative-4V _UP, the cathode of D408 and the anode of D410 are connected with a grid GATE _ UP of the upper tube, and the cathode of D410 is connected with the 14 pin of U401. Capacitors C405 and C406 are connected in parallel at two ends of a pin 14 and a pin 10 of the U401, capacitors C407 and C408 are connected in parallel at two ends of a pin 10 and a pin 15, and capacitors C404 are connected in parallel at two ends of a pin 12 and a pin 13; R417-R420 are grid on resistors, one ends of the parallel resistors are connected with the 14 pin of the U401, R421-R424 are grid off resistors, one ends of the parallel resistors are connected with the 16 pins, the other ends of the 8 resistors are connected with the grid of the upper tube, and R425 are connected between the grid of the upper tube and the 15 pin of the U401 in parallel. The source of the upper tube is connected to the 10 pin of U401.
The lower tube driving circuit is connected IN the same manner as the upper tube, the input signal is PWM _ DOWN _ IN, that is, the input signal is connected to 4 pins of the inverter U102, and the lower tube driving circuit includes components and a connection relationship as shown IN fig. 4 (b), wherein a source of the upper tube is connected to a drain of the lower tube to form a half-bridge circuit.
The fault signal part converts the fault signal sent by the chip into a differential signal for transmission. The circuit consists of a TC4428 logic chip U403 and filter capacitors C416 and C413, wherein a pin 6 and a pin 3 of the U403 are respectively connected with a control power supply 5V _Qand a control power supply ground GND _ Q, and the capacitor C413 is connected in parallel at two ends of the U403; the pin 4 and the pin 2 of the U403 are in short circuit, connected with the pin 8 of the U401 and the pin 8 of the U402 and used for receiving fault signals, and the capacitor C416 is connected between the input signal S0_ OUT and the control power ground GND _ Q in parallel; pins 5 and 7 output positive FAULT _ H and negative FAULT _ L for the FAULT differential signal.
Examples
A SiC power module driving circuit adopts a SIC1182K driving IC of PI company, integrates the functions of short-circuit protection, power supply monitoring, active clamping, fault output and the like, can reach the capability of 8A driving current to the maximum, and can be suitable for driving a 1200V/600A power module without external push-pull. And the negative pressure is adopted for switching off, so that the false conduction caused by crosstalk can be effectively inhibited.
The matched double-end drive isolation power supply is rated at 3.8W, and the power supply is tested, as shown in figure 5, the voltage ripple is within 200mV, the load regulation rate at full load is 5.48% (+ 15V output end) and 14.1% (-4V output end), and the efficiency at full load is 82%. The driving test results are shown in fig. 6, fig. 7 and fig. 8, and the maximum time delay of the rising and falling edges of the driving module is 400ns.
Claims (8)
1. A high-power SiC power module drive circuit is characterized in that: the drive circuit includes: an upper tube driving circuit and a lower tube driving circuit;
the upper tube driving circuit comprises: a primary side sub-circuit on the left side of the driving chip U401 and a secondary side sub-circuit on the right side of the driving chip U401;
a pin 1 of the driving chip U401 is connected with a control power supply 5V _Q, and pins 3-6 are connected with a control power supply ground GND _ Q; a 14 pin is connected with a positive output +15V _UPof a driving power supply, a 10 pin is connected with a ground GND _ UP of the driving power supply, and a 15 pin is connected with a negative output-4V _UPof the driving power supply;
the primary side sub-circuit includes: a pull-down resistor R413, a fault signal pull-up resistor R414, a filter resistor R415, a filter capacitor C403, and buffer and high-frequency filter capacitors C401 and C402; one end of a resistor R415 is connected with the positive electrode of the PWM input signal, the other end of the resistor R415 is connected with a pin 7 of the driving chip U401, two ends of the resistor R414 are respectively connected with a pin 1 and a pin 8, two ends of a resistor R413 are respectively connected with a pin 3 and a pin 7, and a capacitor C403 is connected with the resistor R413 in parallel; the capacitors C401 and C402 are connected in parallel, and two ends of the capacitors are respectively connected with a pin 1 and a pin 3;
the secondary side sub-circuit includes: a clamping diode D401, voltage-stabilizing tubes D402-D407, D408, D409 and D410, on/off grid resistors R417-R420 and R421-R424, voltage-dividing resistors R402-R410, resistors R401, R411, R412, R416 and R425, buffer capacitors C405-C408 and capacitors Ccs1, ccs2 and C404;
one end of the resistor R401 is connected with the 11 pin of the driving chip U401, and the other end of the resistor R401 is connected with the upper tube drain electrode after being sequentially connected with the resistors R402-R410 in series; the other end of the resistor R401 is also connected with a resistor R412 in series to be connected with a driving power ground, and the capacitor Ccs2 is connected with the resistor R412 in parallel; the voltage-regulator tubes D402-D407 are connected in series in the same direction, the tail end of the voltage-regulator tube D407 is connected with the drain electrode of the upper tube, the anode of the voltage-regulator tube D402 is connected with the anode of the voltage-regulator tube D408, one end of the resistor R411 is connected between the anode of the voltage-regulator tube D402 and the anode of the voltage-regulator tube D408, the other end of the resistor R411 is connected with the anode of the clamping diode D401, and the cathode of the clamping diode D401 is connected with the 11 pin of the driving chip U401; the capacitor Ccs1 is connected with the resistor R411 in parallel; the cathode of the voltage regulator tube D409 is connected with the anode of the voltage regulator tube D408, the anode of the voltage regulator tube D409 is connected with a pin 15 of the driving chip U401, and the resistor R416 is connected with the voltage regulator tube D409 in parallel; the cathode of the voltage regulator tube D408 is connected with the anode of the voltage regulator tube D410 and the grid of the upper tube, and the cathode of the voltage regulator tube D410 is connected with the 14 pins of the driving chip U401;
the capacitors C405 and C406 are connected in parallel between pins 14 and 10 of the driving chip U401; the capacitor C407 and the capacitor C408 are connected in parallel between the 15 pin and the 10 pin of the driving chip U401;
the capacitor C404 is connected in parallel between the 12 pins and the 13 pins of the driving chip U401;
the resistors R417-R420 are grid-on resistors, one end of the resistors is connected with the 14 pins of the driving chip U401 after being connected in parallel,
the resistors R421-R424 are gate turn-off resistors, and after being connected in parallel, one end of each resistor is connected with the 16 pins of the driving chip U401,
the other ends of the resistors R417-R424 are connected with the upper tube grid;
the resistor R425 is connected between the upper tube grid and the 15 pins of the driving chip U401;
the source electrode of the upper tube is connected with a pin 10 of the driving chip U401;
the lower tube driving circuit comprises a driving chip U402, and the rest of the connection relation of the lower tube driving circuit is the same as that of the upper tube driving circuit except that the input signal is the negative pole of the PWM input signal.
2. The SiC power module driver circuit according to claim 1, characterized in that: the voltage stabilizing tube D7 is a bidirectional voltage stabilizing tube.
3. The SiC power module driver circuit according to claim 1, characterized in that: the drive circuit further includes: a fault signal sub-circuit;
the fault signal sub-circuit includes: a logic chip U403, a filter capacitor C416 and a bypass capacitor C413;
pins 6 and 3 of the logic chip U03 are respectively connected with a control power supply 5V _Qand a control power supply ground GND _ Q;
the capacitor C413 is connected in parallel between the pin 6 and the pin 3 of the logic chip U403, and the pin 4 and the pin 2 of the logic chip U403 are connected with the pin 8 of the driving chip U401 and the pin 8 of the driving chip U402 simultaneously after being short-circuited so as to receive a fault signal;
the capacitor C416 is connected between the 4 pins of the logic chip U403 and the control power ground;
pins 5 and 7 of the logic chip U403 are used as fault differential signal output terminals.
4. The SiC power module driver circuit according to claim 3, characterized in that: the drive circuit further includes: driving a preceding stage sub-circuit;
the driving preceding-stage sub-circuit includes: the optical coupling isolation circuit unit and the logic circuit unit;
the optical coupling isolation circuit unit comprises: an isolation optocoupler 101, current limiting resistors R101, R103, R104 and R106, filter resistors R102 and R105, filter capacitors C104 and C15 and filter capacitors C101 and C102;
pins 8 and 5 of the isolation optocoupler U101 are respectively connected with a control power supply and a control power supply ground, one ends of resistors R101 and R103 are respectively connected with pins 1 and 2 of the isolation optocoupler U101, and the other ends of the resistors R1 and R3 are connected with an A-path PWM wave differential signal;
one ends of the resistors R104 and R106 are respectively connected with the 4 pin and the 3 pin of the isolation optocoupler U101, and the other ends of the resistors R104 and R106 are connected with the B-path PWM wave differential signal;
one ends of the resistors R102 and R105 are respectively connected with the pin 7 and the pin 6 of the isolation optocoupler U101, and the other ends of the resistors R102 and R105 are used as the output of the isolation optocoupler U101;
the capacitor C104 and the capacitor C105 are respectively connected in parallel with the output ends of the resistors R102 and R105 and are grounded;
the capacitor C101 and the capacitor C102 are connected in parallel between the pin 8 and the pin 5 of the isolation optocoupler U101;
the logic circuit unit includes: a dual-channel inverter U102;
pins 1 and 3 of the dual-channel inverter U102 are used as two input ends of the inverter and are connected with the output ends of the resistors R102 and R105, and pins 6 and 1 of the dual-channel inverter U102 are used as output ends and are connected with the driving sub-circuit.
5. The SiC power module driver circuit according to claim 4, characterized in that: the drive circuit further includes: an isolation circuit unit;
the isolated power supply unit includes: a power supply chip U303, a power supply chip U304, enabling resistors R314, R315, R316 and R317, filter capacitors C307-C310 and C311-C314;
pin 1 of the power supply chip U303 is connected with a power supply +15V, pin 2 is connected with an input power supply ground, and resistors R314 and R315 are connected in series and then connected between the power supply +15V and the input power supply ground; a pin 3 of the power supply chip U303 is connected between the resistors R314 and R315, and a pin 5 is output by the isolation power supply 5VQ 1; c307 and C308 are connected in parallel between a power supply 5VQ1 and QGND1
A pin 1 of the power supply chip U304 is connected with a power supply +15V, a pin 2 is connected with an input power supply ground, and the resistors R316 and R317 are connected between the power supply +15V and the input power supply ground after being connected in series; a pin 3 of the power supply chip U304 is connected between the resistors R316 and R317, and a pin 5 is output by the isolation power supply 5VQ 2; c313 and C314 are connected in parallel between the power supply 5VQ2 and QGND 2.
6. The SiC power module driver circuit of claim 5, wherein: the drive circuit further includes: a bus voltage sampling unit;
the bus voltage sampling unit includes: the circuit comprises an isolation operational amplifier U301, sampling resistors R301-R305, R310 and R311, filter capacitors C301, C302 and C303, and resistors R306 and R309;
the 1 pin and the 4 pins of the operational amplifier isolation U301 are respectively connected with an isolation power supply 5VQ1 and a QGND1 ground, the 3 pin of the isolation operational amplifier U301 is also connected with the QGND1, the 8 pin and the 5 pin are respectively connected with an analog 5V power supply and an analog ground, one end of a resistor R301 is positively connected with a bus, the other end of the resistor R301 is connected with resistors R302, R303 and R304 in series and then connected with the 2 pin of the isolation operational amplifier U301, and a resistor R305 is connected with the R304 in parallel;
after the resistors R310 and R311 are connected in parallel, one end of the resistor R is connected with the pin 2 of the isolation operational amplifier U301, and the other end of the resistor R is connected with a bus ground QGND1;
one end of the capacitor C301 is connected with the pin 2 of the isolation operational amplifier U301, the other end of the capacitor C301 is connected with a bus ground QGND1, the capacitor C302 is connected between the pin 1 of the isolation operational amplifier U301 and the bus ground QGND1, and the capacitor C303 is connected between the pin 8 of the isolation operational amplifier U301 and the analog ground;
the resistors R306 and R309 are respectively connected with the 7 pin and the 6 pin of the isolation operational amplifier U301, and the other end of the resistor is used as a differential signal output.
7. The SiC power module driver circuit of claim 5, wherein: the drive circuit further includes: a phase current sampling unit;
the phase current sampling unit includes: the circuit comprises a current divider, an isolation operational amplifier U302, sampling resistors R307 and R313, a filter capacitor C306, bypass capacitors C304 and C305, and resistors R308 and R312;
the current divider is used for collecting the current of the bus,
the 1 pin and the 4 pins of the isolation operational amplifier U302 are respectively connected with an isolation power supply 5VQ2 and a ground QGND2, the 8 pin and the 5 pin are respectively connected with a simulation 5V power supply and a simulation ground, one ends of resistors R307 and R311 are respectively connected with a shunt, the other ends of the resistors R307 and R311 are respectively connected with the 2 pin and the 3 pin of the isolation operational amplifier U302, a C306 is connected between the 2 pin and the 3 pin in parallel, a capacitor C304 is connected with the 1 pin and the 4 pin, and a capacitor C305 is connected with the 8 pin and the simulation ground; one ends of the resistors R308 and R312 are respectively connected with the 7 pin and the 6 pin of the isolation operational amplifier U302, and the other ends are used as differential signals to be output.
8. The SiC power module driver circuit of claim 5, wherein: the drive circuit further includes: a double-ended isolated drive power supply sub-circuit;
the double-ended isolation driving power supply sub-circuit comprises: the power supply comprises a push-pull power supply driving converter U202, a double-end output transformer U201, a BAV70 diode D201, a TL431 voltage regulator tube Q201, filter capacitors C201, C202, C203, C204, C205, C206 and C207, a current limiting resistor R201 and voltage regulating resistors R202 and R203;
pins 5 and 2 of the push-pull power supply driving converter U202 are connected with +5V input, and pins 1 and 3 are used as the output of the push-pull power supply driving converter U202 and connected with pins 3 and 1 of the double-end output transformer U201; a pin 2 of the double-end output transformer U201 is connected with a +5V input, pins 4 and 6 of the double-end output transformer U201 are connected with a pin 1 and a pin 2 of the BAV70 diode D201, and a pin 5 of the double-end output transformer U201 serves as an output power supply of-4V; one end of each of the resistors C204, C205 and C206 is connected with a power supply plus 15V, the other end of each of the resistors C204, C205 and C206 is connected with a power supply minus 4V, one end of the resistor R201 is connected with the power supply plus 15V, the other end of the resistor R201 is connected with a pin 1 of the TL431 voltage-regulator tube Q201, and a pin 3 of the TL431 voltage-regulator tube Q201 is connected with the power supply minus 4V; one end of the capacitor C203 is connected with +15V of the power supply, and the other end of the capacitor C is connected with GND _ UP in a driving mode; one end of the capacitor C207 is connected with a power supply of-4V, and the other end of the capacitor C207 is connected with GND _ UP in a driving mode; pin 2 of the TL431 regulator Q201 is connected to GND _ UP driving ground through a resistor R202, and pin 2 of the TL431 regulator Q201 is also connected to power-4V through a resistor R203.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210580340.0A CN115189556A (en) | 2022-05-25 | 2022-05-25 | High-power SiC power module drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210580340.0A CN115189556A (en) | 2022-05-25 | 2022-05-25 | High-power SiC power module drive circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115189556A true CN115189556A (en) | 2022-10-14 |
Family
ID=83513824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210580340.0A Pending CN115189556A (en) | 2022-05-25 | 2022-05-25 | High-power SiC power module drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115189556A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649858A (en) * | 2018-04-28 | 2018-10-12 | 北京机械设备研究所 | A kind of high-power electric steering engine drive system based on IGBT |
| CN108809124A (en) * | 2018-08-16 | 2018-11-13 | 华北科技学院 | A kind of efficient phase control rectifier driving circuit of self-shield |
| CN110076421A (en) * | 2019-05-29 | 2019-08-02 | 华南理工大学 | Fast frequency pulse TIG welding based on SiC connects power supply digital control circuit |
| CN112886545A (en) * | 2021-02-02 | 2021-06-01 | 北京市科通电子继电器总厂有限公司 | Driving circuit with short-circuit protection function suitable for high-voltage solid-state power controller |
| CN216216476U (en) * | 2021-10-12 | 2022-04-05 | 中电鹏程智能装备有限公司 | Full-isolation intelligent power module circuit |
-
2022
- 2022-05-25 CN CN202210580340.0A patent/CN115189556A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649858A (en) * | 2018-04-28 | 2018-10-12 | 北京机械设备研究所 | A kind of high-power electric steering engine drive system based on IGBT |
| CN108809124A (en) * | 2018-08-16 | 2018-11-13 | 华北科技学院 | A kind of efficient phase control rectifier driving circuit of self-shield |
| CN110076421A (en) * | 2019-05-29 | 2019-08-02 | 华南理工大学 | Fast frequency pulse TIG welding based on SiC connects power supply digital control circuit |
| CN112886545A (en) * | 2021-02-02 | 2021-06-01 | 北京市科通电子继电器总厂有限公司 | Driving circuit with short-circuit protection function suitable for high-voltage solid-state power controller |
| CN216216476U (en) * | 2021-10-12 | 2022-04-05 | 中电鹏程智能装备有限公司 | Full-isolation intelligent power module circuit |
Non-Patent Citations (7)
| Title |
|---|
| "ACPLC87B芯片技术手册", pages 1 - 16, Retrieved from the Internet <URL:www.broadcom.com> * |
| "AMC1302芯片技术手册", pages 1 - 20, Retrieved from the Internet <URL:www.ti.com> * |
| "SIC1182K芯片技术手册", pages 1 - 5, Retrieved from the Internet <URL:www.power.com> * |
| "TC4428AVOA芯片技术手册", pages 1 - 10, Retrieved from the Internet <URL:www.microchip.com.cn> * |
| "TC4428A芯片技术手册", Retrieved from the Internet <URL:www.microchip.com.cn> * |
| "TPS70950DBVR芯片技术手册", pages 1 - 13, Retrieved from the Internet <URL:www.ti.com> * |
| 王水平等: "《PWM控制与驱动器实用指南及应用电路-双端控制与驱动器部分》", 30 November 2004, 西安电子科技大学出版社, pages: 18 - 30 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11088538B2 (en) | Module of suppressing inrush current, method of controlling the same and on-board bidirectional charger using the same | |
| CN104300795B (en) | A kind of anti exciting converter and its control method | |
| CN102810993B (en) | Power converter and method thereof | |
| CN102364859B (en) | Switching power supply control device and flyback switching power supply with same | |
| CN111431394B (en) | Control method of buck single-phase three-level bridgeless PFC converter system | |
| CN109245055A (en) | Power conversion system, the current foldback circuit of power switch tube and method | |
| CN108809197B (en) | Staggered PFC control circuit and motor driving circuit | |
| US20240088775A1 (en) | Power conversion apparatus and energy storage system | |
| CN204172712U (en) | A kind of city rail medium-pressure type with circulation elimination function can present electric supply installation | |
| CN211606390U (en) | BOOST power conversion circuit | |
| CN203691245U (en) | Synchronous rectifier controller used for flyback converter | |
| CN216929576U (en) | Protection circuit based on boost power tube in inverter and inverter | |
| CN115189556A (en) | High-power SiC power module drive circuit | |
| CN208094431U (en) | A kind of ACRCD clamp circuits preventing single-phase photovoltaic inversion topology power pipe over-voltage breakdown | |
| CN116581984A (en) | Control method, control device, control chip and switching power supply | |
| CN106410981A (en) | Busbar electricity getting circuit of high-voltage side of current transformer | |
| CN106451428A (en) | Hybrid type unified power quality conditioner with short circuiting current limiting function | |
| CN1897436A (en) | Current-driven synchronized communtating circuit | |
| CN216872883U (en) | Capacitor pre-charging device with hysteresis comparator | |
| CN115940382A (en) | Standby power charging device and vehicle-mounted LCD (liquid Crystal display) play controller standby power system | |
| CN214315049U (en) | High-power staggered continuous mode PFC circuit for plant light supplement lamp | |
| CN211908650U (en) | Boost power conversion circuit | |
| CN212323983U (en) | Switch control circuit and power supply device | |
| CN201639482U (en) | High-voltage isolation multiple-output IGCT driving power supply | |
| CN105659483A (en) | Power-supply device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |