CN115188684A - Method for detecting wafer fracture, cutting device and cutting equipment - Google Patents

Method for detecting wafer fracture, cutting device and cutting equipment Download PDF

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Publication number
CN115188684A
CN115188684A CN202210702713.7A CN202210702713A CN115188684A CN 115188684 A CN115188684 A CN 115188684A CN 202210702713 A CN202210702713 A CN 202210702713A CN 115188684 A CN115188684 A CN 115188684A
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China
Prior art keywords
wafer
cutting
along
track
cut
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Pending
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CN202210702713.7A
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Chinese (zh)
Inventor
陈世隐
肖国兵
周福海
余俊华
关文武
赵思
唐先俊
詹喜录
尹建刚
高云峰
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Shenzhen Han's Micromachining Software Technology Co ltd
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Shenzhen Han's Micromachining Software Technology Co ltd
Han s Laser Technology Industry Group Co Ltd
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Priority to CN202210702713.7A priority Critical patent/CN115188684A/en
Publication of CN115188684A publication Critical patent/CN115188684A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0064—Devices for the automatic drive or the program control of the machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

The embodiment of the application discloses a method for detecting wafer fracture, a cutting device and cutting equipment, wherein the method for detecting wafer fracture comprises the steps of obtaining a cutting track; selecting reference particles on the wafer at two sides of a cutting track as comparison references; obtaining the distance X between comparison references when the wafer is cut off along the cutting track; obtaining the distance Ln between the comparison references after the wafer is cut along the cutting track; judging whether the wafer is broken or not; if Ln is greater than or equal to X, breaking; if Ln is less than X, no fracture occurs. The method comprises the steps of firstly cutting along a cutting track to obtain a distance X between comparison references when a wafer is cut off in a critical mode, taking the X as a standard for cutting off the wafer along the cutting track, then obtaining a distance Ln between the comparison references after the wafer is cut off along the cutting track, then comparing the Ln with the X to judge whether the correspondingly cut wafer is broken or not, and if Ln is larger than or equal to X, breaking; if Ln is less than X, no fracture occurs.

Description

Method for detecting wafer fracture, cutting device and cutting equipment
Technical Field
The present application relates to the field of detection technologies, and in particular, to a method for detecting wafer fracture, a cutting device, and a cutting apparatus.
Background
In the manufacturing process of a semiconductor assembly, a wafer is divided from the whole wafer by forming patterning and electrode manufacturing on the wafer, then carrying out laser scribing and then splitting by a mechanical cleaver.
In the wafer splitting process, in order to judge whether a wafer is completely broken and separated from the wafer, the prior art discloses an optical detection method for wafer splitting, which judges whether the wafer is split by using the difference of the width dimension of a cutting line before and after splitting, however, in the splitting process, a film is attached to the surface of most of the wafer, and the optical characteristics of the surface of the wafer are different, so that the imaging effect of the cutting line on part of the wafer is poor, the width of the cutting line is difficult to extract, and the misjudgment rate is high;
the prior art also discloses a method for detecting the uninterrupted gray scale of a wafer, wherein when the wafer is split, the wafer is judged to be split when the gray scale conversion reaches a critical value, the detection method has high requirements on the optical environment, if other light irradiation interferences exist, the effect is poor, the gray scale critical values of different types of wafers are troublesome to set, and different films have different light-focusing characteristics, so that the result is unstable.
Therefore, a detection method capable of accurately determining the wafer cleavage is urgently needed.
Disclosure of Invention
The embodiment of the application relates to a method for detecting wafer breakage, a cutting device and cutting equipment, which are used for accurately detecting whether a wafer is broken or not.
The embodiment of the application discloses a method for detecting wafer fracture, which comprises the following steps:
obtaining a cutting track;
selecting reference particles on the wafer at two sides of a cutting track as a comparison standard;
obtaining the distance X between the comparison references when the wafer is cut off along the cutting track;
obtaining the distance Ln between the comparison references after the wafer is cut along the cutting track;
judging whether the wafer is broken or not;
if Ln is greater than or equal to X, breaking; and
if Ln is less than X, no fracture occurs.
Optionally, if Ln is smaller than X, the method for detecting wafer fracture further includes:
increasing the cutting feed amount, and cutting the wafer again along the corresponding cutting track; and
acquiring the distance Ln +1 between the comparison references after the wafer is cut along the corresponding cutting track;
and continuously judging whether the wafer is broken or not by comparing Ln +1 with X, wherein n is an integer larger than 0.
Optionally, if Ln is greater than or equal to X, the method for detecting wafer fracture further includes:
obtaining the distance Ln between the comparison references after the wafer is cut along the next cutting track;
and comparing Ln with X to judge whether the corresponding cutting part of the wafer is broken or not.
Optionally, the acquiring a distance X between comparison references when the wafer is cut off along the cutting track includes:
and cutting off the wafer along the cutting track by adopting a manual cutting mode.
Optionally, the acquiring a distance Ln between comparison references after the wafer is cut along the cutting track includes:
and cutting the wafer along the cutting track by adopting an automatic cutting mode.
Optionally, the method for detecting wafer fracture further includes:
setting a characteristic area on a wafer;
the step of selecting reference particles on the wafer, which are positioned at two sides of a cutting track, as comparison references comprises the following steps:
and selecting characteristic areas on the wafer at two sides of the cutting track as comparison reference.
Optionally, the "acquiring a cutting trajectory" includes;
acquiring a plurality of first cutting lines which are arranged on a wafer in parallel along a first direction at equal intervals and a plurality of second cutting lines which are arranged on the wafer in parallel along a second direction at equal intervals;
the wafer is divided into a plurality of wafers arranged in an array by matching the plurality of first cutting lines with the plurality of second cutting lines, each wafer is provided with the same characteristic areas, and the characteristic areas are arranged in the array.
Optionally, the method for detecting wafer fracture further includes:
establishing a corresponding matched template according to the comparison reference;
the step of acquiring the distance X between the comparison references when the wafer is cut off along the cutting track comprises the following steps:
obtaining the distance X between the comparison references when the wafer is cut off along the cutting track in a critical way according to the template;
the step of acquiring the distance Ln between the comparison references after the wafer is cut along the cutting track comprises the following steps:
and acquiring the distance Ln between the comparison references after the wafer is cut along the cutting track according to the template.
Optionally, the obtaining, according to the template, a distance X between comparison references when the wafer is cut off along the cutting track includes:
obtaining an image when the wafer is cut off along a cutting track; and
according to the comparison between the template and the image, acquiring the distance X between comparison references when the wafer is cut off along the cutting track;
the step of acquiring the distance Ln between the comparison references after the wafer is cut along the cutting track according to the template comprises the following steps:
acquiring an image of a wafer cut along a cutting track; and
and according to the comparison between the template and the image, acquiring the distance Ln between the comparison references after the wafer is cut along the cutting track.
The embodiment of the application also discloses a cutting device, which comprises a workbench, a cutting receiving table, a cutting piece, an image acquisition piece and a light source, wherein the table surface of the workbench is used for placing a wafer; the cutting receiving table is fixed with the workbench, the table surface of the workbench is flush with the table surface of the cutting receiving table, and the table surface of the cutting receiving table is used for supporting a to-be-cut part of the wafer; the cutting head of the cutting piece is used for cutting the wafer, the cutting piece is arranged on the side close to the table top of the cutting receiving table, and the cutting head of the cutting piece is arranged opposite to the table top of the cutting receiving table; the image acquisition part is arranged opposite to the cutting head of the cutting part, and the workbench and the cutting receiving table are arranged between the cutting part and the image acquisition part; the light source set up in image acquisition spare with the cutting receives between the platform, the light-emitting head orientation of light source the mesa setting of cutting receiving the platform.
The embodiment of the application also discloses cutting equipment, the cutting equipment comprises a memory, a processor and the cutting device, the memory stores the computer program of the method for detecting the wafer fracture, and the cutting device and the processor realize the method for detecting the wafer fracture when respectively executing the computer program.
The method comprises the steps of firstly cutting along a cutting track to obtain a distance X between comparison references when a wafer is cut off in a critical mode, taking the X as a standard for cutting off the wafer along the cutting track, then obtaining a distance Ln between the comparison references after the wafer is cut along the cutting track, then comparing the Ln with the X to judge whether the correspondingly cut wafer is broken or not, and if the Ln is larger than or equal to the X, breaking the wafer; if Ln is less than X, the fracture is not generated, and direct comparison is performed through objective data. And then the problem of unstable detection result in the prior art is overcome. The effect that the detection result is visual, accurate and clear is achieved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
FIG. 1 is a flowchart illustrating a method for detecting wafer breakage according to an embodiment of the present disclosure;
FIG. 2 is a flowchart of a method for further detecting wafer breakage after determining wafer breakage or wafer non-breakage in FIG. 1;
FIG. 3 is a flowchart of a method for detecting wafer breakage disclosing a dicing method employed corresponding to the collection of data X and Ln;
FIG. 4 is a flowchart of a method for detecting wafer breakage disclosing feature areas provided on a wafer;
FIG. 5 is a flowchart disclosing a method for detecting wafer breakage by establishing a corresponding matched template according to a comparison reference;
FIG. 6 is a flowchart disclosing a method of detecting wafer breakage by capturing a wafer and comparing the cut image with a template;
FIG. 7 is a flowchart of a more specific method for detecting wafer breakage according to an embodiment of the present disclosure;
fig. 8 is a schematic structural diagram of a cutting apparatus for cutting a wafer according to an embodiment of the present disclosure;
FIG. 9 is a schematic view of a wafer structure according to an embodiment of the present disclosure;
fig. 10 is a schematic diagram of a wafer structure before being diced according to the embodiment of the disclosure;
fig. 11 is a schematic view of a wafer structure after being cut along the cutting trace in fig. 10;
fig. 12 is a block diagram of a dicing apparatus that can dice wafers and perform a method of detecting wafer breakage according to an embodiment of the present disclosure.
10, a cutting device; 11. a work table; 12. cutting the receiving table; 13. cutting the piece; 14. an image acquisition member; 15. a light source; 16. cutting equipment; 17. a memory; 18. a processor; 19. cutting a track; 20. a first cutting line; 21. a second cut line.
Detailed Description
It is to be understood that the terminology, the specific structural and functional details disclosed herein are for the purpose of describing particular embodiments only, and are representative, but that the present application may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
In the description of the present application, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating relative importance or as implicitly indicating the number of technical features indicated. Thus, unless otherwise specified, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature; "plurality" means two or more. The terms "comprises" and "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that one or more other features, integers, steps, operations, elements, components, and/or combinations thereof may be present or added.
In addition, terms of orientation or positional relationship indicated by "vertical", "horizontal", and the like, are described based on the orientation or relative positional relationship shown in the drawings, and are only for convenience of simplifying the description of the present application, and do not indicate that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application.
Furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly and may include, for example, fixed connections, removable connections, and integral connections; can be mechanically or electrically connected; either directly or indirectly through intervening media, or through both elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
The present application is described in detail below with reference to the figures and alternative embodiments.
As shown in fig. 1 and 9, an embodiment of the present application discloses a method for detecting wafer fracture, including the steps of:
s10, obtaining a cutting track;
s20, selecting reference particles on two sides of a cutting track on the wafer as a comparison standard;
s30, obtaining a distance X between comparison references when the wafer is cut off along a cutting track;
s40, obtaining the distance Ln between the comparison references after the wafer is cut along the cutting track;
s50, comparing Ln with X to judge whether the wafer is broken or not;
s60, if Ln is larger than or equal to X, breaking; and
and S70, if Ln is less than X, the material is not broken.
In the embodiment of the application, the distance X between the comparison references when the wafer is cut off is obtained by cutting along the cutting track 19, the X is used as the standard for cutting off the wafer along the cutting track 19, then the distance Ln between the comparison references after cutting the wafer along the cutting track 19 is obtained, the Ln and the X are compared to judge whether the correspondingly cut wafer is broken or not, and if the Ln is larger than or equal to the X, the wafer is broken; if Ln is less than X, the fracture is not generated, and direct comparison is performed through objective data. And then overcome the unstable problem of prior art testing result. The effect that the detection result is visual, accurate and clear is achieved.
As shown in fig. 2 and 9, if Ln is smaller than X, the method for detecting wafer fracture further includes the steps of:
s80, increasing the cutting feed amount, and cutting the wafer again along the corresponding cutting track; and
s90, obtaining the distance Ln +1 between the comparison references after the wafer is cut along the corresponding cutting track;
and continuously judging whether the wafer is broken or not by comparing Ln +1 with X, wherein n is an integer larger than 0.
That is, if the wafer after being cut is determined to be unbroken, that is, step S70 is performed, step S80 is continuously performed to cut the corresponding cutting track 19 again by increasing the cutting feed amount; then, step S90 is executed, and the distance Ln +1 between the reference bases after re-cutting is obtained; then, step S50 is executed, and Ln +1 is compared with X to continuously determine whether the wafer is broken until the corresponding wafer is broken, so as to ensure that the wafer is finally cut off to obtain the cut wafer.
Similarly, as shown in fig. 2 and fig. 9, if Ln is greater than or equal to X, the method for detecting wafer fracture further includes the steps of:
s100, cutting along the next cutting track of the wafer;
and comparing Ln with X to judge whether the corresponding cutting part of the wafer is broken or not.
That is, after step S60 is executed, if it is determined that the corresponding cut of the wafer is broken, step S100 is continuously executed to perform cutting along the next cutting track 19 until the wafer is cut along all the cutting tracks 19, so as to obtain all the dies of the wafer.
As shown in fig. 3 and 9, it can be understood that the step S30 includes the steps of:
s31, cutting off the wafer along the cutting track by adopting a manual cutting mode; and
s32, acquiring the distance X between the comparison standards when the wafer is cut off.
The wafer is cut off along the cutting track 19 in a manual cutting mode, so that the distance X between comparison references when the wafer is cut off in a critical mode along the cutting track 19 is obtained, the cutting progress and force can be accurately controlled in the manual cutting mode, the operation is more flexible, the state when the wafer is cut off in the critical mode can be conveniently achieved, the distance X between the accurate comparison references is obtained, and the accuracy of judging whether the wafer is broken subsequently is guaranteed. The manual cutting in the embodiment of the present application may be cutting by a handheld tool, or may be controlled by a manual cutting machine, and on the premise of not departing from the concept of the embodiment of the present application, several simple deductions or replacements may be made, which should be considered as belonging to the protection scope of the present application.
As shown in fig. 3 and 9, it can be further understood that the step S40 includes the steps of:
s41, cutting the wafer along the cutting track by adopting an automatic cutting mode; and
and S42, acquiring the distance Ln between the comparative references after the wafer is cut.
According to the embodiment of the application, the wafer is cut along the cutting track 19 in an automatic cutting mode, so that the distance Ln between the contrast references of the wafer after the wafer is cut along the cutting track 19 is obtained, the speed of mechanical automatic cutting is higher, the parameters can adopt the summarized parameters during manual cutting, and the wafer can be cut quickly and at a high cutting-off rate.
As shown in fig. 4 and 9, the method for detecting wafer fracture further includes:
sa, setting a characteristic area on the wafer;
the step S20 includes the steps of:
and S21, selecting characteristic areas on the wafer on two sides of the cutting track as comparison references.
By establishing a specific characteristic region as a comparison reference, the accuracy of acquiring the data X and Ln can be improved, and the method is more convenient. The feature region may be a shape feature, a color feature, or another feature that can be used as a reference for a mark, without limitation.
Specifically, as shown in fig. 4 and 9, the step S10 includes the steps of:
s11, obtaining a plurality of first cutting lines which are parallel to each other along a first direction and are arranged on the wafer at equal intervals and a plurality of second cutting lines which are parallel to each other along a second direction and are arranged on the wafer at equal intervals;
the first direction is marked as Y, the second direction is marked as Z, an included angle is formed between the first direction and the second direction, the first cutting lines 20 and the second cutting lines 21 are matched to divide the wafer into a plurality of wafers arranged in an array, the same characteristic areas are respectively arranged on each wafer, and the characteristic areas on the wafers are arranged in an array.
The wafer in this application embodiment is divided into the wafer that a plurality of structures are the same and the array is arranged by many first cut lines 20 and many second cut lines 21, conveniently the cutting obtains a plurality of wafers, and all be equipped with the same characteristic district on every wafer, and the characteristic district is the array on the wafer and arranges, so when regard as the contrast basis with the characteristic district, only need gather the characteristic on the wafer of a cut line both sides as the contrast basis and acquire data X, can with the Ln who gathers after the cutting of all cut lines that correspond the wafer judge that the contrast, not only can satisfy accurate judgement, and efficiency is also than higher.
In particular, the angle between the first direction and the second direction may be 90 °, so that each wafer is the same rectangle to meet actual market requirements. It should be noted that the wafer referred to in the embodiment of the present application is a structure that can be used for subsequent processing, and is not a scrap portion, because the portion divided by the first scribe line 20 and the second scribe line 21 also has an edge of the wafer, and the edge cannot be used for subsequent processing after being cut, the wafer is not referred to in the embodiment of the present application.
Further, as shown in fig. 5, 10 and 11, the method for detecting wafer fracture further includes the steps of:
sb, establishing a corresponding matched template according to a comparison reference;
the step S30 further includes the steps of:
s33, obtaining the distance X between the comparison references when the wafer is cut off along the cutting track according to the template;
the step S40 further includes the steps of:
s43, acquiring the distance Ln between the comparison references after the wafer is cut along the cutting track according to the template.
According to the embodiment of the application, the corresponding matched template is established according to the comparison reference, and then the template is used as a tool for acquiring the data X and Ln, so that the subsequent automatic cutting and the acquisition of the corresponding data are quicker and more convenient. The template may be a shape template, a color template, or other template, as long as the template is matched with the contrast standard, without limitation.
As shown in fig. 6, wherein the step S33 includes the steps of:
s331, obtaining an image of the wafer when the wafer is cut off along the cutting track; and
s332, comparing the template with the image, and obtaining the distance X between comparison references when the wafer is cut off along the cutting track;
the step S43 includes the steps of:
s431, obtaining an image of the wafer after being cut along the cutting track; and
and S432, according to the comparison between the template and the image, acquiring the distance Ln between the comparison references after the wafer is cut along the cutting track.
In the embodiment of the application, the distance X between the comparison references when the wafer is cut along the cutting track 19 is obtained by acquiring the image when the wafer is cut along the cutting track 19 and then comparing the image with the template. Similarly, the distance Ln between the comparison references of the wafer cut along the cutting track 19 is obtained by acquiring the image of the wafer cut along the cutting track 19 and then comparing the image with the template. The mode of comparing the template with the image is better than the fitting degree of comparing the template with the actual structure, and the obtained result is more accurate.
As shown in fig. 7, fig. 7 is a detailed flowchart of the method for detecting wafer fracture, which combines the above disclosure, and of course, steps in the method may be increased or decreased or combined in sequence according to actual needs, and all the steps should be regarded as belonging to the protection scope of the present application as long as the embodiments of the present application can be implemented.
As shown in fig. 8 to 11, an embodiment of the present application further discloses a cutting device 10, where the cutting device 10 includes a worktable 11, a cutting stage 12, a cutting member 13, an image capturing member 14, and a light source 15, and a table top of the worktable 11 is used for placing a wafer; the cutting receiving table 12 is fixed with the workbench 11, the table top of the workbench 11 is flush with the table top of the cutting receiving table 12, and the table top of the cutting receiving table 12 is used for supporting a position of a wafer to be cut; the cutting head of the cutting piece 13 is used for cutting the wafer, the cutting piece 13 is arranged close to the table top side of the cutting receiving table 12, and the cutting head of the cutting piece 13 is arranged opposite to the table top of the cutting receiving table 12; the image acquisition part 14 is arranged opposite to the cutting head of the cutting part 13, and the workbench 11 and the cutting receiving platform 12 are arranged between the cutting part 13 and the image acquisition part 14; the light source 15 set up in image acquisition spare 14 with cut and receive between the platform 12, the luminous head orientation of light source 15 the mesa setting of cutting receiving platform 12.
In actual cutting, a wafer is placed on the table top of the worktable 11, a position corresponding to a to-be-cut position is correspondingly placed on the table top of the cutting receiving table 12, the cutting head of the cutting piece 13 cuts the wafer along a preset cutting track 19, the light source 15 emits light, the light irradiates the cutting track 19 of the wafer before cutting and the cutting track 19 after cutting and is reflected to the image acquisition piece 14, and the image acquisition piece 14 acquires images of the wafer before and after cutting. The image capturing member 14 may include a camera and lens combination, and then the light sources 15 may be symmetrically disposed on two sides of the cutting track 19 to improve the stability of the imaging effect.
As shown in fig. 12, an embodiment of the present application further discloses a cutting apparatus 16, where the cutting apparatus 16 includes a memory 17, a processor 18, and the cutting device 10 as described above, where the memory 17 stores therein a computer program of the method for detecting wafer fracture as described above, and the cutting device 10 and the processor 18 respectively execute the computer program to implement the method for detecting wafer fracture as described above. The memory 17 stores a computer program of a method for detecting wafer breakage, which is used to control the processor 18 and the cutting device 10, the cutting device 10 is responsible for cutting the wafer and collecting images before and after cutting of the wafer and uploading the images to the processor 18, and then the processor 18 executes judgment on whether the wafer is broken or not.
It should be noted that, in the embodiments of the present application, the limitations of the steps related to the embodiments are not considered to limit the order of the steps without affecting the implementation of the specific embodiments, the steps written in the foregoing may be executed first, or executed later, or even executed simultaneously, and the steps of the various embodiments may be combined as needed, and as long as the embodiments of the present application can be implemented, the steps should be regarded as belonging to the protection scope of the present application.

Claims (11)

1. A method for detecting wafer breakage, comprising:
acquiring a cutting track;
selecting reference particles on the wafer at two sides of a cutting track as comparison references;
obtaining the distance X between comparison references when the wafer is cut off along the cutting track;
obtaining the distance Ln between the comparison references after the wafer is cut along the cutting track;
judging whether the wafer is broken or not;
if Ln is greater than or equal to X, then fracture; and
if Ln is less than X, no fracture occurs.
2. The method of claim 1, wherein if Ln is less than X, the method further comprises:
increasing the cutting feed amount, and cutting the wafer again along the corresponding cutting track; and
acquiring the distance Ln +1 between the comparison references after the wafer is cut along the corresponding cutting track;
and continuously judging whether the wafer is broken or not by comparing Ln +1 with X, wherein n is an integer larger than 0.
3. The method of claim 1, wherein if Ln is greater than or equal to X, the method further comprises:
obtaining the distance Ln between the comparison references after the wafer is cut along the next cutting track;
and comparing Ln with X to judge whether the corresponding cutting part of the wafer is broken or not.
4. The method as claimed in claim 1, wherein the step of obtaining the distance X between the reference points at which the wafer is cut along the cutting track comprises:
and cutting off the wafer along the cutting track by adopting a manual cutting mode.
5. The method for detecting wafer breakage as claimed in claim 1, wherein the step of obtaining the distance Ln between the comparison references after the wafer is cut along the cutting track comprises:
and cutting the wafer along the cutting track by adopting an automatic cutting mode.
6. The method of detecting wafer breakage as claimed in claim 1, wherein the method of detecting wafer breakage further comprises:
setting a characteristic area on a wafer;
the step of selecting reference particles on the wafer and positioned at two sides of the cutting track as comparison bases comprises the following steps:
and selecting characteristic areas on the two sides of the cutting track on the wafer as comparison references.
7. The method for detecting wafer breakage as claimed in claim 6, wherein the step of obtaining the dicing track includes:
acquiring a plurality of first cutting lines which are arranged on a wafer in parallel along a first direction at equal intervals and a plurality of second cutting lines which are arranged on the wafer in parallel along a second direction at equal intervals;
the wafer is divided into a plurality of wafers arranged in an array by matching the plurality of first cutting lines with the plurality of second cutting lines, each wafer is provided with the same characteristic areas, and the characteristic areas are arranged in the array.
8. The method of detecting wafer breakage as claimed in claim 1, wherein the method of detecting wafer breakage further comprises:
establishing a corresponding matched template according to the comparison reference;
the step of acquiring the distance X between the comparison references when the wafer is cut off along the cutting track comprises the following steps:
obtaining the distance X between comparison references when the wafer is cut off along the cutting track according to the template;
the step of acquiring the distance Ln between the comparison references after the wafer is cut along the cutting track comprises the following steps:
and acquiring the distance Ln between the comparison references after the wafer is cut along the cutting track according to the template.
9. The method for detecting wafer fracture as claimed in claim 8, wherein the obtaining the distance X between the comparison benchmarks when the wafer is cut through along the cutting track according to the template comprises:
obtaining an image when the wafer is cut off along a cutting track; and
according to the comparison between the template and the image, acquiring the distance X between comparison references when the wafer is cut off along the cutting track;
the step of acquiring the distance Ln between the comparison references after the wafer is cut along the cutting track according to the template comprises the following steps:
obtaining an image of a wafer cut along a cutting track; and
and according to the comparison between the template and the image, acquiring the distance Ln between the comparison references after the wafer is cut along the cutting track.
10. A cutting device, comprising:
the worktable is used for placing a wafer;
the cutting receiving table is fixed with the workbench, the table surface of the workbench is flush with the table surface of the cutting receiving table, and the table surface of the cutting receiving table is used for supporting a to-be-cut part of the wafer;
the cutting head of the cutting piece is used for cutting the wafer, the cutting piece is arranged on the side close to the table top of the cutting receiving table, and the cutting head of the cutting piece is arranged opposite to the table top of the cutting receiving table;
the image acquisition part is arranged opposite to the cutting head of the cutting part, and the workbench and the cutting receiving table are arranged between the cutting part and the image acquisition part; and
the light source, the light source set up in image acquisition spare with the cutting receives between the platform, the light-emitting head orientation of light source the mesa setting of platform is received in the cutting.
11. A dicing apparatus comprising a memory in which a computer program of the method of detecting wafer breakage according to any one of claims 1 to 9 is stored, a processor, and a dicing device according to claim 10, wherein the dicing device and the processor, when executing the computer program, respectively, implement the method of detecting wafer breakage according to any one of claims 1 to 9.
CN202210702713.7A 2022-06-21 2022-06-21 Method for detecting wafer fracture, cutting device and cutting equipment Pending CN115188684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210702713.7A CN115188684A (en) 2022-06-21 2022-06-21 Method for detecting wafer fracture, cutting device and cutting equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210702713.7A CN115188684A (en) 2022-06-21 2022-06-21 Method for detecting wafer fracture, cutting device and cutting equipment

Publications (1)

Publication Number Publication Date
CN115188684A true CN115188684A (en) 2022-10-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
CN (1) CN115188684A (en)

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