CN115185037B - Single-mode 90-degree bent waveguide based on silicon-based platform and manufacturing method - Google Patents
Single-mode 90-degree bent waveguide based on silicon-based platform and manufacturing method Download PDFInfo
- Publication number
- CN115185037B CN115185037B CN202210822722.XA CN202210822722A CN115185037B CN 115185037 B CN115185037 B CN 115185037B CN 202210822722 A CN202210822722 A CN 202210822722A CN 115185037 B CN115185037 B CN 115185037B
- Authority
- CN
- China
- Prior art keywords
- waveguide
- transmission section
- silicon
- curved
- mode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 230000005540 biological transmission Effects 0.000 claims abstract description 97
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 238000005452 bending Methods 0.000 abstract description 31
- 230000008569 process Effects 0.000 abstract description 11
- 230000010354 integration Effects 0.000 abstract description 8
- 238000013461 design Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 238000001259 photo etching Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 11
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12119—Bend
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a single-mode 90-degree bent waveguide based on a silicon-based platform and a manufacturing method thereof, wherein the single-mode 90-degree bent waveguide comprises a silicon waveguide which is divided into three sections along the propagation direction: the first transmission section is of a conical structure and comprises an input waveguide, the second transmission section is connected with the first transmission section and the third transmission section and is a bent waveguide and comprises a first bent waveguide, a second bent waveguide and a third bent waveguide, and the third transmission section is of a conical structure and comprises an output waveguide. The invention has the beneficial effects of reducing bending loss and improving transmission efficiency; smaller size and higher integration. Compared with most of low-loss curved waveguides at present, the curved waveguide has a radius of only 0.5 micron, which is more beneficial to realizing more dense on-chip photon integrated circuit design; the device of the invention only needs simple photoetching and etching processes, is completely compatible with the current CMOS process size, and can be manufactured relatively easily and efficiently by means of mature processes.
Description
Technical Field
The invention relates to the technical field of silicon-based integrated photonics, in particular to a single-mode 90-degree bent waveguide based on a silicon-based platform and a manufacturing method thereof.
Background
The integration of individual photonic elements into a single chip to form a multi-functional photonic integrated circuit is an important goal of integrated optics, which plays an important role in the data and telecommunications fields, and has attracted increasing attention in other application fields such as astronomy, biosensing, medical diagnostics and quantum photonics. Because the silicon-based platform has higher material refractive index difference and compatibility with the CMOS processing technology, the silicon-based photonic integrated circuit is rapidly developed, and the integration scale of devices is gradually increased. In the above silicon-based photonic integrated circuits, curved waveguides are unavoidable, and the minimum size of curved waveguides greatly limits the integration density of the on-chip optical circuits. To improve the integration, the smaller the size (particularly the bending radius) of the bending waveguide should be, the better, and currently, the very small-sized waveguide bending with the bending radius of 500nm is very challenging to achieve by using a pure silicon-based waveguide.
Analysis of the bending loss of a silicon waveguide can find that the loss value comes mainly from four aspects: 1) Absorption loss of the material surface; 2) Scattering loss due to silicon waveguide boundary roughness; 3) Radiation loss caused by waveguide bending; 4) Mode mismatch loss between the input/output straight waveguide and the curved waveguide. The loss values of 3) and 4) above are particularly significant when the bending radius of the silicon waveguide is close to 500nm, so that it is necessary to reduce bending loss by properly designing the structure of the bending portion of the waveguide.
At present, a plurality of schemes have been proposed to solve the problem of waveguide bending, such as euler bending waveguide, bessel bending waveguide and plasmon bending waveguide, and the like, so that the problems of the bending waveguide in terms of size, loss and the like are solved to different degrees. However, in the case of bending radius approaching 500nm, the euler bending and bessel bending structures are difficult to be applied, and the plasmon waveguide is not recommended due to high material absorption loss and processing technology requirements. Therefore, how to use a common silicon-based waveguide to realize the waveguide bending with ultra-small size (bending radius of 500 nm) and ultra-low loss is the key point of the current research, and has important practical significance for the development of the photonic integrated circuit on the push-plate towards the high-density and large-scale integration direction.
Disclosure of Invention
This section is intended to outline some aspects of embodiments of the invention and to briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section as well as in the description summary and in the title of the application, to avoid obscuring the purpose of this section, the description summary and the title of the invention, which should not be used to limit the scope of the invention.
The present invention has been developed in view of the above-described and/or existing problems with single-mode 90 ° curved waveguides based on silicon-based platforms and methods of fabrication.
Therefore, the invention aims to provide a low-loss ultra-small 90 DEG single-mode bent waveguide of a silicon-based platform with small size, low loss and simple processing based on an etching process aiming at the requirements of an on-chip photon integrated circuit on the size and transmission loss of the bent waveguide.
In order to solve the technical problems, the invention provides the following technical scheme: a single-mode 90 ° curved waveguide based on a silicon-based platform, comprising a silicon waveguide divided into three sections along the propagation direction: the first transmission section is of a conical structure and comprises an input waveguide, the second transmission section is connected with the first transmission section and the third transmission section and is a bent waveguide and comprises a first bent waveguide, a second bent waveguide and a third bent waveguide, and the third transmission section is of a conical structure and comprises an output waveguide.
As a preferred embodiment of the single-mode 90 ° curved waveguide based on a silicon-based platform according to the present invention, wherein: one end of the second curved waveguide is fixedly connected with the input waveguide, one end of the third curved waveguide is fixedly connected with the output waveguide, and the second curved waveguide and the third curved waveguide are symmetrically arranged about an angle of 45 degrees.
As a preferred embodiment of the single-mode 90 ° curved waveguide based on a silicon-based platform according to the present invention, wherein: the input waveguide and the output waveguide are silicon-based waveguides, no etching is performed, the first curved waveguide does not perform any etching, and only the area between the second curved waveguide and the third curved waveguide is completely etched.
As a preferred embodiment of the single-mode 90 ° curved waveguide based on a silicon-based platform according to the present invention, wherein: the first transmission section is of a conical waveguide structure, and two ends of the first transmission section are respectively connected with the input waveguide and the bent waveguide.
As a preferred embodiment of the single-mode 90 ° curved waveguide based on a silicon-based platform according to the present invention, wherein: the third transmission section is of a conical waveguide structure, and two ends of the third transmission section are respectively connected with the output waveguide and the bent waveguide.
As a preferred embodiment of the single-mode 90 ° curved waveguide based on a silicon-based platform according to the present invention, wherein: the input waveguide and the output waveguide are in a 90-degree structure.
As a preferable scheme of the manufacturing method of the single-mode 90-degree bending waveguide based on the silicon-based platform, the manufacturing method comprises the following steps: comprises the steps of,
constructing a silicon dioxide substrate;
constructing a first transmission section, a second transmission section and a third transmission section above the silicon dioxide substrate;
an input waveguide is arranged in the first transmission section, and etching is not performed, so that a modal restriction area is formed;
setting a bent waveguide in the second transmission section, and completely etching the area between the second bent waveguide and the third bent waveguide to form an index matching area;
an output waveguide is arranged in the third transmission section, and etching is not performed, so that a modal restriction area is formed;
air cladding is performed.
As a preferable scheme of the single-mode 90-degree bent waveguide based on the silicon-based platform and the manufacturing method, the invention comprises the following steps: the input and output waveguides have a width of 0.3 microns, a length of 0.15 microns, and a height of 0.22 microns.
As a preferable scheme of the single-mode 90-degree bent waveguide based on the silicon-based platform and the manufacturing method, the invention comprises the following steps: the first bending waveguide has a height of 0.22 micron, a bending radius of 0-0.45 micron and a bending angle of 0-90 degrees, the second bending waveguide has a height of 0.22 micron, a bending radius of 0.45-0.5 micron and a bending angle of 75-90 degrees, the third bending waveguide has a height of 0.22 micron, a bending radius of 0.45-0.5 micron and a bending angle of 0-15 degrees.
As a preferable scheme of the single-mode 90-degree bent waveguide based on the silicon-based platform and the manufacturing method, the invention comprises the following steps: the silicon waveguide may optionally incorporate silicon-compatible germanium metal to enhance the refractive index contrast of the device.
The invention has the beneficial effects of 1, reduced bending loss and improved transmission efficiency. 2. Smaller size and higher integration. Compared with most of low-loss curved waveguides at present, the curved waveguide has a radius of only 0.5 microns, and is more beneficial to realizing more dense on-chip photonic integrated circuit design. 3. Device fabrication is relatively easy. The device of the invention only needs simple photoetching and etching processes, is completely compatible with the size permission of the current CMOS process line, and can be manufactured relatively easily and efficiently by means of the mature CMOS process line.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. Wherein:
FIG. 1 is a schematic diagram of the overall structure of the present invention;
FIG. 2 is a cross-sectional view of a first transmission segment structure;
fig. 3 is a cross-sectional view of θ=0° in the second transmission segment structure;
fig. 4 is a cross-sectional view of θ=45° in the second transmission segment structure;
fig. 5 is a cross-sectional view of θ=90° in the second transmission segment structure;
FIG. 6 is a cross-sectional view of a third transmission segment structure;
FIG. 7 shows the electric field evolution of an input transverse magnetic fundamental mode optical signal along the transmission direction of a silicon-based waveguide;
fig. 8 is a schematic structural view of a second embodiment;
FIG. 9 is an electric field evolution of an input transverse magnetic fundamental mode optical signal along a silicon-based waveguide transmission direction in a second embodiment;
Detailed Description
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
Further, reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic can be included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments.
Example 1
Referring to fig. 1 to 7, in a first embodiment of the present invention, a single-mode 90 ° curved waveguide and a manufacturing method based on a silicon-based platform are provided, wherein the single-mode 90 ° curved waveguide and the manufacturing method based on the silicon-based platform include a silicon waveguide 100, which is divided into three sections along a propagation direction: the first transmission section 101, the second transmission section 102 and the third transmission section 103, wherein the first transmission section 101 has a tapered structure and comprises an input waveguide 101a, the second transmission section 102 connects the first transmission section 101 and the third transmission section 103 and is a curved waveguide 102a and comprises a first curved waveguide 102a-1, a second curved waveguide 102a-2 and a third curved waveguide 102a-3, and the third transmission section 103 has a tapered structure and comprises an output waveguide 103a.
Specifically, one end of the second curved waveguide 102a-2 is fixedly connected to the input waveguide 101a, one end of the third curved waveguide 102a-3 is fixedly connected to the output waveguide 103a, and the second curved waveguide 102a-2 and the third curved waveguide 102a-3 are symmetrically disposed about a 45 ° angle.
Further, the propagation direction of the silicon waveguide 100 is divided into a first transmission section 101, a second transmission section 102 and a third transmission section 103 clockwise, two ends of the second transmission section 102 are respectively connected with the first transmission section 101 and the third transmission section 103, wherein the first transmission section 101 and the third transmission section 103 are in a conical structure, and respectively comprise an input waveguide 101a and an output waveguide 103a, which are all silicon-based waveguides without other etching processes. The second transmission segment 102 is formed by a curved waveguide 102a, and is divided into two parts from the curved center outwards, wherein the first part is a first curved waveguide 102a-1, which is not etched, the second part is a second curved waveguide 102a-2 and a third curved waveguide 102a-3, only the second curved waveguide 102a-2 and the third curved waveguide 1-2a-3 in the second part are reserved, and the area in the middle of the second curved waveguide and the third curved waveguide is completely etched.
Preferably, the first transmission section 101 has a tapered waveguide structure, and two ends of the first transmission section are respectively connected to the input waveguide 101a and the curved waveguide 102a. The third transmission section 103 has a tapered waveguide structure, and two ends of the third transmission section are respectively connected to the output waveguide 103a and the curved waveguide 102a. The input waveguide 101a and the output waveguide 103a have a 90 ° structure.
Preferably, the first transmission segment 101 of the present invention constitutes a modal confinement region; the second transmission segment 102 forms an index matching region, the first curved waveguide 102a-1 forms a high index confinement region, and the second curved waveguide 102a-2 and the third curved waveguide 102a-3 form a high index contrast region; an optical signal including a transverse electric fundamental mode is input from an input waveguide 101a, passes through a high refractive index confinement region and a high refractive index contrast region; the high refractive index limiting region breaks the transverse symmetry of the waveguide and limits the transverse distribution of the optical signals so that the optical signals deviate to the inner side of the bent waveguide; the high refractive index contrast region enhances the refractive index contrast between the inner side and the outer side of the transmission curved waveguide, more strongly limits the transmission direction of light, simultaneously performs a converging action on input and output optical signals, reduces transmission loss caused by curvature mismatch, and the output waveguide 103a in the third transmission section 103 forms a modal confinement region.
Preferably, fig. 2 is a cross-sectional view of the first transmission section 101 in this embodiment, where the first transmission section 101 is in a tapered waveguide structure, and two ends of the first transmission section are respectively connected to the input waveguide 101a and the curved waveguide 102a, so that loss caused by offset at the junction of the straight waveguide and the curved waveguide is effectively reduced by introducing the tapered waveguide structure.
Preferably, fig. 3-5 are cross-sectional views of the second conveying section 102, where three typical angles of 0 °, 45 ° and 90 ° are chosen for analysis, respectively, where the 0 ° and 90 ° structures are identical, symmetrical about 45 °. The second transmission segment 102 includes a first curved waveguide 102a-1, a second curved waveguide 102a-2, and a third curved waveguide 102a-3, an air cladding 105, and a silica substrate 104; the whole waveguide structure is subjected to one-step etching process, so that errors caused by the manufacturing process are reduced, the waveguide can maintain stable transmission characteristics, and the whole transmission principle is that the transmitted light is limited to the inner side of the waveguide by improving the contrast between the refractive indexes inside and outside the bent waveguide, so that radiation loss is reduced.
Preferably, fig. 6 is a cross-sectional view of a third transmission segment 103, which functions the same as the first transmission segment 101, reducing losses caused by offset at the junction of the straight waveguide and the curved waveguide 102a.
Preferably, fig. 7 is an electric field evolution diagram of the transverse electric fundamental mode optical signal input in the present embodiment along the transmission direction of the curved waveguide, and it can be seen from the diagram that the transmission of the transverse electric fundamental mode optical signal into the curved waveguide is basically limited to the curved waveguide for transmission, and the overall loss is very low.
Example 2
Referring to fig. 1 to 9, for a second embodiment of the present invention, the present embodiment provides a method for manufacturing a single-mode 90 ° curved waveguide based on a silicon-based platform: which comprises the following steps:
constructing a silicon dioxide substrate 104; constructing a first transmission section 101, a second transmission section 102 and a third transmission section 103 above a silicon dioxide substrate 104; an input waveguide 101a is arranged in the first transmission section 101, and is not etched to form a modal confinement region; a curved waveguide 102a is arranged in the second transmission section 102, and the area between the second curved waveguide 102a-2 and the third curved waveguide 102a-3 is etched completely to form an index matching area; an output waveguide 103a is arranged in the third transmission section 103, and is not etched to form a modal confinement region; an air blanket 105 is performed.
Further, the input waveguide 101a and the output waveguide 103a have a width of 0.3 micrometers, a length of 0.15 micrometers, and a height of 0.22 micrometers. The first curved waveguide 102a-1 has a height of 0.22 micron, a radius of curvature of 0-0.45 micron, a radius of curvature of 0-90 degrees, the second curved waveguide 102a-2 has a height of 0.22 micron, a radius of curvature of 0.45-0.5 micron, a radius of curvature of 75-90 degrees, the third curved waveguide 102a-3 has a height of 0.22 micron, a radius of curvature of 0.45-0.5 micron, and a radius of curvature of 0-15 degrees.
Preferably, the silicon waveguide 100 optionally incorporates a silicon compatible germanium waveguide 106 to enhance the refractive index contrast of the device.
Three typical angles of 0 °, 45 ° and 90 ° were chosen for analysis in fig. 8, respectively, where the 0 ° and 90 ° structures are identical, symmetrical about 45 °. The second transmission segment 102 includes a first curved waveguide 102a-1, a second curved waveguide 102a-2, a third curved waveguide 102a-3, an air cladding 105, a silica substrate 104, and a germanium waveguide 106; the whole waveguide structure is subjected to one-step etching process, so that errors caused by a manufacturing process are reduced, the waveguide can maintain stable transmission characteristics, and the whole transmission principle is that the transmitted light is limited to the inner side of the waveguide by improving the contrast between the refractive indexes inside and outside the bent waveguide, so that radiation loss is reduced; but due to the introduction of germanium, which is a metallic material, the refractive index of the device is increased, the propagation direction of light is limited, and the absorption loss of light is increased. Fig. 9 is an electric field evolution diagram of an input transverse electric fundamental mode optical signal along a curved waveguide transmission direction in the present embodiment.
As shown in the table below, the leftmost side of the table is a reference to a current similar device, radius is the bend Radius of the bent waveguide, width is the Width of the bent waveguide, fourier is the area size of the entire device, and Loss is the transmission Loss of the device.
In summary, the single-mode 90 ° curved waveguide based on the silicon-based platform provided by the invention has the function of enabling the input transverse electric fundamental mode optical signal to pass through the curved waveguide with lower loss, and the size of the photonic integrated circuit device can be reduced due to the advantage of the size of the curved waveguide, so that the integration level of the photonic integrated circuit is higher. The invention uses pure silicon to ensure the loss not higher than 0.15 dB/band, the size of the device is 0.95 multiplied by 0.95 mu m 2 . In pursuit of smaller device sizes, silicon-compatible germanium metal may be optionally introduced to enhance the refractive index contrast of the device, with the final device size being 0.75x0.75 μm at about 0.16 dB/band loss 2 . There is a substantially different degree of improvement in both size and loss compared to the presently known curved waveguide structures.
It is important to note that the construction and arrangement of the present application as shown in a variety of different exemplary embodiments is illustrative only. Although only a few embodiments have been described in detail in this disclosure, those skilled in the art who review this disclosure will readily appreciate that many modifications are possible (e.g., variations in sizes, dimensions, structures, shapes and proportions of the various elements, values of parameters (e.g., temperature, pressure, etc.), mounting arrangements, use of materials, colors, orientations, etc.) without materially departing from the novel teachings and advantages of the subject matter described in this application. For example, elements shown as integrally formed may be constructed of multiple parts or elements, the position of elements may be reversed or otherwise varied, and the nature or number of discrete elements or positions may be altered or varied. Accordingly, all such modifications are intended to be included within the scope of present invention. The order or sequence of any process or method steps may be varied or re-sequenced according to alternative embodiments. In the claims, any means-plus-function clause is intended to cover the structures described herein as performing the recited function and not only structural equivalents but also equivalent structures. Other substitutions, modifications, changes and omissions may be made in the design, operating conditions and arrangement of the exemplary embodiments without departing from the scope of the present inventions. Therefore, the invention is not limited to the specific embodiments, but extends to various modifications that nevertheless fall within the scope of the appended claims.
Furthermore, in order to provide a concise description of the exemplary embodiments, all features of an actual implementation may not be described (i.e., those not associated with the best mode presently contemplated for carrying out the invention, or those not associated with practicing the invention).
It should be appreciated that in the development of any such actual implementation, as in any engineering or design project, numerous implementation-specific decisions may be made. Such a development effort might be complex and time consuming, but would nevertheless be a routine undertaking of design, fabrication, and manufacture for those of ordinary skill having the benefit of this disclosure.
It should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention may be modified or substituted without departing from the spirit and scope of the technical solution of the present invention, which is intended to be covered in the scope of the claims of the present invention.
Claims (8)
1. A single-mode 90 ° curved waveguide based on a silicon-based platform, characterized by: comprising the steps of (a) a step of,
a silicon waveguide (100) divided into three sections along the propagation direction: a first transmission section (101), a second transmission section (102) and a third transmission section (103), the first transmission section (101) being of a tapered structure comprising an input waveguide (101 a), the second transmission section (102) connecting the first transmission section (101) and the third transmission section (103) being a curved waveguide (102 a) comprising a first curved waveguide (102 a-1), a second curved waveguide (102 a-2) and a third curved waveguide (102 a-3), the third transmission section (103) being of a tapered structure comprising an output waveguide (103 a);
one end of the second curved waveguide (102 a-2) is fixedly connected with the input waveguide (101 a), one end of the third curved waveguide (102 a-3) is fixedly connected with the output waveguide (103 a), and the second curved waveguide (102 a-2) and the third curved waveguide (102 a-3) are symmetrically arranged about a 45-degree angle;
the input waveguide (101 a) and the output waveguide (103 a) are silicon-based waveguides, and are not etched, the first curved waveguide (102 a-1) is not etched, and only the area between the second curved waveguide (102 a-2) and the third curved waveguide (102 a-3) is etched entirely.
2. A silicon-based platform based single mode 90 ° bend waveguide as claimed in claim 1 wherein: the first transmission section (101) is of a conical waveguide structure, and two ends of the first transmission section are respectively connected with the input waveguide (101 a) and the bent waveguide (102 a).
3. A silicon-based platform based single mode 90 ° bend waveguide as claimed in claim 1 or 2, wherein: the third transmission section (103) is of a conical waveguide structure, and two ends of the third transmission section are respectively connected with the output waveguide (103 a) and the bent waveguide (102 a).
4. A silicon-based platform based single mode 90 ° bend waveguide as claimed in claim 3 wherein: the input waveguide (101 a) and the output waveguide (103 a) are in a 90 DEG structure.
5. A method for manufacturing a single-mode 90 ° curved waveguide based on a silicon-based platform, based on the single-mode 90 ° curved waveguide based on a silicon-based platform as set forth in any one of claims 1 to 4, characterized in that: comprises the steps of,
constructing a silicon dioxide substrate (104);
constructing a first transmission section (101), a second transmission section (102) and a third transmission section (103) above a silicon dioxide substrate (104);
an input waveguide (101 a) is arranged in the first transmission section (101), and no etching is performed to form a modal confinement region;
a curved waveguide (102 a) is arranged in the second transmission section (102), and all the areas between the second curved waveguide (102 a-2) and the third curved waveguide (102 a-3) are etched to form an index matching area;
an output waveguide (103 a) is arranged in the third transmission section (103), and no etching is performed to form a modal restriction area;
an air blanket (105) is performed.
6. The method for manufacturing the single-mode 90-degree bend waveguide based on the silicon-based platform as claimed in claim 5, wherein: the input waveguide (101 a) and the output waveguide (103 a) have a width of 0.3 microns, a length of 0.15 microns, and a height of 0.22 microns.
7. The method for manufacturing the single-mode 90-degree bend waveguide based on the silicon-based platform as claimed in claim 6, wherein: the first curved waveguide (102 a-1) has a height of 0.22 micron, a radius of curvature of 0-0.45 micron, a radius of curvature of 0-90 degrees, the second curved waveguide (102 a-2) has a height of 0.22 micron, a radius of curvature of 0.45-0.5 micron, a radius of curvature of 75-90 degrees, and the third curved waveguide (102 a-3) has a height of 0.22 micron, a radius of curvature of 0.45-0.5 micron, and a radius of curvature of 0-15 degrees.
8. The method for manufacturing the single-mode 90-degree bend waveguide based on the silicon-based platform as claimed in claim 7, wherein: the silicon waveguide (100) optionally incorporates a silicon compatible germanium waveguide (106) to enhance the refractive index contrast of the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210822722.XA CN115185037B (en) | 2022-07-12 | 2022-07-12 | Single-mode 90-degree bent waveguide based on silicon-based platform and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210822722.XA CN115185037B (en) | 2022-07-12 | 2022-07-12 | Single-mode 90-degree bent waveguide based on silicon-based platform and manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115185037A CN115185037A (en) | 2022-10-14 |
| CN115185037B true CN115185037B (en) | 2024-02-20 |
Family
ID=83518434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210822722.XA Active CN115185037B (en) | 2022-07-12 | 2022-07-12 | Single-mode 90-degree bent waveguide based on silicon-based platform and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115185037B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117631136A (en) * | 2024-01-26 | 2024-03-01 | 中山大学 | Multi-core fan-in and fan-out chip and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108132499A (en) * | 2018-02-02 | 2018-06-08 | 苏州易缆微光电技术有限公司 | Silicon waveguide spot converter based on multilayer polymer structure and preparation method thereof |
| US10816727B1 (en) * | 2019-06-14 | 2020-10-27 | Globalfoundries Inc. | Multimode waveguide bends with features to reduce bending loss |
| CN113985522A (en) * | 2021-10-22 | 2022-01-28 | 上海交通大学 | Micro-ring optical switch based on silicon-silicon nitride three-dimensional integration |
-
2022
- 2022-07-12 CN CN202210822722.XA patent/CN115185037B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108132499A (en) * | 2018-02-02 | 2018-06-08 | 苏州易缆微光电技术有限公司 | Silicon waveguide spot converter based on multilayer polymer structure and preparation method thereof |
| US10816727B1 (en) * | 2019-06-14 | 2020-10-27 | Globalfoundries Inc. | Multimode waveguide bends with features to reduce bending loss |
| CN113985522A (en) * | 2021-10-22 | 2022-01-28 | 上海交通大学 | Micro-ring optical switch based on silicon-silicon nitride three-dimensional integration |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115185037A (en) | 2022-10-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6621972B2 (en) | Optical waveguides with trench structures | |
| EP1356327B1 (en) | Optical mode size converter with vertical and horizontal mode shaping | |
| US7072547B2 (en) | Waveguide coupling into photonic crystal waveguides | |
| CN109407229B (en) | End face coupler | |
| CN201237651Y (en) | Mono-mode light path using multimode waveguide | |
| US7609931B2 (en) | Planar waveguide structure with tightly curved waveguides | |
| US20060115215A1 (en) | Dual "cheese wedge" silicon taper waveguide | |
| CN112230338B (en) | Ultra-wideband on-chip polarization beam splitting rotator based on reverse biconical asymmetric coupler | |
| CN111562650A (en) | End face coupler based on double-trident sub-wavelength grating structure | |
| CN115185037B (en) | Single-mode 90-degree bent waveguide based on silicon-based platform and manufacturing method | |
| US6931189B2 (en) | Optical waveguides and optical devices with optical waveguides | |
| CN108983352A (en) | A kind of end coupling device and preparation method thereof | |
| CN114114540B (en) | Design method of efficient compact adiabatic mode converter | |
| CN104459890A (en) | Optical fiber and silicon waveguide coupling structure based on polymer waveguides and manufacturing method thereof | |
| WO2016008114A1 (en) | Spotsize converter and apparatus for optical conduction | |
| CN115166902B (en) | Waveguide layer and multimode interference cross waveguide thereof | |
| CN114384632A (en) | Array waveguide grating and waveguide type detector-based spot-size converter | |
| US7120335B2 (en) | Vertically and laterally confined 3D optical coupler | |
| US6810190B2 (en) | Compact three-dimensional mode size converters for fiber-waveguide coupling | |
| CN113050220A (en) | Gradual change curved waveguide device | |
| US20030133661A1 (en) | Use of tapered dielectric slab waveguides for input and output coupling of light into photonic crystal devices | |
| US8768124B2 (en) | Direct coupling of optical slot waveguide to another optical waveguide | |
| CN114924352B (en) | Apodized grating coupler for coupling optical fiber and mixed surface plasma waveguide | |
| CN112470047A (en) | Silicon dioxide to silicon nitride PLC wave mode converter for hybrid device | |
| CN111025474B (en) | Silicon waveguide mode coupler covering SU-8 cladding based on refractive index regulation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |