CN115184668B - Hall effect-based microwave power measurement method and system - Google Patents
Hall effect-based microwave power measurement method and system Download PDFInfo
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Abstract
The invention discloses a Hall effect-based microwave power measurement method and a Hall effect-based microwave power measurement system, and relates to the technical field of microwaves and electromagnetic fields. The microwave power measurement method uses the Hall effect as a principle, a Hall element is placed in a microwave orthogonal electromagnetic field, under the condition that no external electric field or magnetic field is added, the microwave self-alternating electric field is used as an external electric field, and the microwave self-alternating magnetic field is used as an external magnetic field; and measuring the output voltage of the Hall element through a Hall circuit to realize the measurement of microwave power. The Hall element has the characteristic of linear relation between output voltage and microwave power, can be maintained in a larger bandwidth and a larger power range, has novel thought, can solve the problem of nonlinearity of the relation between physical quantity and microwave power measured by other microwave power measuring methods, and has good application prospect in a plurality of microwave technical fields.
Description
Technical Field
The invention relates to the technical field of microwaves and electromagnetic fields, in particular to a method and a system for measuring microwave power based on a Hall effect.
Background
The power is one of the most important parameters of microwaves, and a detector for measuring microwave power is widely applied to the fields of radio communication, radars, electronic countermeasure, broadcast television, medical treatment, microwave heating equipment and the like. Microwave power measurement in the industry is mainly performed by two methods:
The high-power microwave measurement uses a calorimetric method, wherein the principle of the calorimetric method is that the temperature rise of a microwave absorbing material is measured, and the heat absorbed by the material, namely the microwave energy, is pushed out through integration; the microwave energy is averaged over time to obtain microwave power, which is characterized by a wide bandwidth, a certain linearity, but a relatively large error and a relatively slow response time.
The low-power microwave measurement uses a detection crystal method, the principle of which is to measure the intensity of a microwave electric field through a fast response diode so as to calculate microwave power, and the method is characterized by wider bandwidth, smaller error, fast response time and poorer linear performance.
Disclosure of Invention
Aiming at the problems of poor linear performance and response time existing in the prior microwave power measurement technology, the invention develops a new method and a system for measuring the microwave power based on the Hall effect.
The invention is realized by the following technical scheme:
In a first aspect, the present invention provides a method for measuring microwave power based on hall effect, where the method uses hall effect as a principle, and places a hall element in a microwave orthogonal electromagnetic field, and uses a microwave self-alternating electric field as an external electric field and a microwave self-alternating magnetic field as an external magnetic field without adding any external electric field or magnetic field; and measuring the output voltage of the Hall element through a Hall circuit to realize the measurement of microwave power.
Wherein the hall element is a hall effect enabled device.
The working principle is as follows:
Based on the prior art such as calorimetry, the principle is that the heat absorbed by the material, namely the microwave energy, is deduced by integration through the temperature rise measurement of the microwave absorbing material; the microwave energy is averaged over time to obtain microwave power, which is characterized by a wide bandwidth, a certain linearity, but a relatively large error, a very slow response time, and a time response in the order of minutes. For example, the detection crystal method is based on the principle that the microwave electric field intensity is measured by a fast response diode so as to calculate the microwave power, and the method is characterized by wider bandwidth, smaller error and fast response time, but because the method is based on a quadratic function (parabolic) form, the linear interval is poor, and the linear performance is poor; in order to achieve the linearity performance, some detection crystals only use a section of characteristic curve, the measurement power range is greatly affected, and other detection crystals such as logarithmic detectors have logarithmic power linearity performance, and the actual characteristic curve is an exponential function and is far from the true linearity performance.
The present invention contemplates utilizing the hall effect, which is an electromagnetic effect, which refers to the generation of an additional electric field perpendicular to the direction of the current and magnetic field when the current passes through the metal or semiconductor perpendicular to the external magnetic field, thereby creating a potential difference across the metal or semiconductor, known as the hall voltage. The magnitude and direction of the Hall voltage V H satisfy the following conditions:
wherein eta is a coefficient related to the material, and the Hall voltage direction is Direction.
The invention aims to solve the problems of poor linear performance and response time in the existing microwave power measurement technology, and develops a new method for measuring the microwave power by adopting a brand new principle (different from the measurement principle of a calorimeter method and a detection crystal method in the prior art), in particular to measuring the microwave power by utilizing a Hall effect. The deduction and verification are as follows:
as shown in fig. 1, E represents an electric field, and B represents a magnetic field; in the invention, a semiconductor is placed in a microwave orthogonal electromagnetic field, semiconductor current is driven by a microwave alternating electric field, and the Hall voltage changing along with time can be expressed as:
Wherein V H (t) is the Hall voltage of the semiconductor over time t, η EM is a coefficient related to the material properties and dimensions, the Hall voltage V H (t) is not a vector, the above expression merely represents the direction thereof as
In the context of figure 1 of the drawings,As an initial microwave orthogonal electromagnetic field of a semiconductor, is formed through a change of half period piIs a microwave orthogonal electromagnetic field of (a).
It is thus noted that in a microwave orthogonal electromagnetic field, the electric field is time-phased with the magnetic field, at the same spatial location,The direction does not change with time (/ >)Direction and/>The same direction), i.e. the hall voltage has a non-zero effective value, if the dc component is measured, the voltage effective value V eff can be obtained:
wherein T is the alternating period of the microwave electromagnetic field.
The instantaneous electromagnetic power p (t) of the microwaves can be expressed as:
where η 0 is a constant related to the microwave transmission medium and boundary conditions, the instantaneous power p (t) is not a vector, the above expression representing only its flow direction.
While the microwave power P can be expressed as:
Order the Then:
P＝kVeff
The invention here concludes: the semiconductor placed in the microwave orthogonal electromagnetic field generates current due to the orthogonal electric field, the existence of the current generates Hall voltage due to the orthogonal magnetic field, the Hall voltage has a non-zero effective value, the effective value of the Hall voltage and the microwave power are in linear relation, and the linear relation between the microwave power P and the effective value V eff of the Hall voltage is a straight line passing through an origin point. This is the core physical mechanism and basis of the present invention.
Compared with a calorimeter, the invention has the advantages of better linear performance, quick response, high precision and the like on the basis of keeping the advantage of wider bandwidth of the calorimeter. Compared with the detection crystal method, the invention not only maintains the advantages of wider bandwidth, smaller error, quick response time and the like, but also increases the linear detection range of the microwave power of the detection crystal method, simultaneously reduces fitting parameters to 1 (but the quadratic function fitting parameters of the detection crystal method are at least 2), can furthest reduce the time consumed by power calculation, and provides the greatest convenience for hardware calculation.
Further, the measuring of the microwave power is realized by measuring the output voltage of the Hall element; the calculation formula of the microwave power is as follows:
P＝kVeff
wherein P is microwave power, k is a linear coefficient, and V eff is output voltage of the Hall element.
Further, the linear coefficient is obtained by performing linear fitting and calibration on the output voltage and the microwave power of the Hall element through a power source, a sweep frequency source, a power meter and other instruments.
Further, the microwave orthogonal electromagnetic field comprises a coaxial line, a microstrip line and a space plane wave.
Further, the Hall element is placed in the microwave orthogonal electromagnetic field, and the Hall element is fixed in the microwave orthogonal electromagnetic field by utilizing a support structure made of a nonmetallic material.
Further, the Hall circuit is arranged around the Hall element, and output voltage measurement of the Hall element is realized through the Hall circuit;
The hall element includes a metal or a semiconductor.
Further, the Hall circuit, the Hall element and the microwave transmission/emission structure are integrated and fixed to realize impedance matching; and then the microwave power is obtained through the voltage output of the Hall element.
Further, according to the measured microwave power range, an amplifying circuit is connected to the output end of the Hall circuit; the output voltage signal of the Hall element is amplified to a numerical range (such as 0- +/-5V) suitable for measurement and acquisition by the amplifying circuit.
Further, the microwave power measurement method has a large power dynamic range, and can meet the linear performance of the voltage-power relation in a very wide power range;
the microwave power measuring method has a large frequency dynamic range, and can meet the linearity performance of the voltage-power relation in a very wide frequency range.
In a second aspect, the present invention further provides a hall effect based microwave power measurement system, which supports the hall effect based microwave power measurement method; the system comprises:
The Hall element is arranged in the microwave orthogonal electromagnetic field, takes the microwave self-alternating electric field as an external electric field and takes the microwave self-alternating magnetic field as an external magnetic field under the condition of not adding any external electric field and magnetic field, and outputs direct-current Hall voltage; the hall element includes a metal or a semiconductor;
The Hall circuit is arranged around the Hall element and is used for measuring the direct-current Hall voltage output by the Hall element;
the support fixing structure is made of nonmetallic materials and is used for fixing the Hall element in a microwave orthogonal electromagnetic field;
The input end of the amplifying circuit is connected with the output end of the Hall circuit, and the output end of the amplifying circuit outputs an amplified voltage signal; the amplifying circuit is used for amplifying the output voltage of the Hall element according to the measured microwave power range, so that the voltage signal is amplified to a numerical range (such as 0- +/-5V) suitable for measurement and acquisition.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. The invention uses Hall effect as principle, places Hall element in microwave orthogonal electromagnetic field, under the condition of no external electric field and magnetic field, uses microwave self-alternating electric field as external electric field, and uses microwave self-alternating magnetic field as external magnetic field; and measuring the output voltage of the Hall element through a Hall circuit to realize the measurement of microwave power. The invention adopts a brand new principle to measure microwave power (different from the measurement principle of a calorimeter method and a detection crystal method in the prior art), specifically utilizes a Hall effect to measure the microwave power, a Hall element arranged in a microwave orthogonal electromagnetic field generates current due to the orthogonal electric field, the current generates Hall voltage due to the orthogonal magnetic field, the Hall voltage has a non-zero effective value, the Hall voltage effective value and the microwave power are in linear relation, and the linear relation between the microwave power P and the Hall voltage effective value V eff is a straight line passing through an origin, so that the linear performance of the microwave measurement is enhanced. The Hall element has the characteristic of linear relation between output voltage and microwave power, can be maintained in a larger bandwidth and a larger power range, has novel thought, can solve the problem of nonlinearity of the relation between physical quantity and microwave power measured by other microwave power measuring methods, and has good application prospect in a plurality of microwave technical fields.
2. The invention increases the linear detection range of the microwave power of the detection crystal method in principle, reduces fitting parameters to 1 (while the quadratic function fitting parameters of the detection crystal method are at least 2), can furthest reduce the time consumed by power calculation, and provides the maximum convenience for hardware calculation; meanwhile, the measuring method of the invention keeps the advantages of bandwidth, response speed and power dynamic range, and can simultaneously meet the requirements of broadband, linear performance, quick response, large dynamic range of measured power and the like; the method can be flexibly suitable for microwave power measurement under various orthogonal electromagnetic field distribution conditions by using different Hall elements, different circuit designs, different fixed structure designs, different fixed material selections, different amplifying circuit selections and the like, and has wide application prospect and economic value in the fields of scientific research, production, communication, military and the like.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings:
Fig. 1 is a schematic diagram of a method for measuring microwave power based on hall effect according to the present invention.
Fig. 2 is a schematic structural diagram of a hall effect based microwave power measurement system according to the present invention.
Reference numerals and corresponding part names:
1-a Hall element; a 2-hall circuit; 3-supporting and fixing structures; a 4-amplification circuit; 5-a microwave power calculation unit; -a microwave magnetic field; -microwave electric field.
Detailed Description
For the purpose of making apparent the objects, technical solutions and advantages of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present invention and the descriptions thereof are for illustrating the present invention only and are not to be construed as limiting the present invention.
Example 1
The invention aims to solve the problems of poor linear performance and response time existing in the prior microwave power measurement technology, and develops a new method for measuring microwave power by adopting a brand-new principle (different from the measurement principle of a calorimetric method and a detection crystal method in the prior art), and particularly, the Hall effect is utilized to measure the microwave power, a Hall element arranged in a microwave orthogonal electromagnetic field generates current due to the orthogonal electric field, the current generates Hall voltage due to the orthogonal magnetic field, the Hall voltage has a non-zero effective value, the Hall voltage effective value and the microwave power are in linear relation, and the linear relation between the microwave power P and the Hall voltage effective value V eff is a straight line passing through an origin, so that the linear performance of microwave measurement is enhanced. This is the core physical mechanism and basis of the present invention.
As shown in FIG. 1, the microwave power measurement method based on the Hall effect is characterized in that the Hall effect is used as a principle, a Hall element is arranged in a microwave orthogonal electromagnetic field, and under the condition that no external electric field or magnetic field is added, a microwave self-alternating electric field is used as an external electric field, and a microwave self-alternating magnetic field is used as an external magnetic field; and measuring the output voltage of the Hall element through a Hall circuit to realize the measurement of microwave power.
The Hall element has the characteristic of linear relation between output voltage and microwave power, can be maintained in a larger bandwidth and a larger power range, has novel thought, can solve the problem of nonlinearity of the relation between physical quantity and microwave power measured by other microwave power measuring methods, and has good application prospect in a plurality of microwave technical fields.
As a further implementation, the measuring of the microwave power is realized by measuring the output voltage of the hall element; the calculation formula of the microwave power is as follows:
P＝kVeff
wherein P is microwave power, k is a linear coefficient, and V eff is output voltage of the Hall element.
Specifically, the linear coefficient is obtained by performing linear fitting and calibration on the output voltage and microwave power of the Hall element through a power source, a sweep frequency source, a power meter or other instruments.
As a further implementation, the microwave orthogonal electromagnetic field includes coaxial lines, microstrip lines, and spatial plane waves.
As a further implementation, the Hall element is placed in the microwave orthogonal electromagnetic field, and the Hall element is fixed in the microwave orthogonal electromagnetic field by utilizing a support structure made of a nonmetallic material.
As a further implementation, the hall circuit is arranged around the hall element, the hall circuit being adapted to a circuit configuration of microwave field distribution; the output voltage of the Hall element is measured through a Hall circuit;
The hall element includes a metal or a semiconductor.
As a further implementation, the hall circuit, the hall element and the microwave transmission/emission structure are integrated and fixed to realize impedance matching; and then the microwave power is obtained through the voltage output of the Hall element.
As a further implementation, according to the measured microwave power range, an amplifying circuit is connected to the output end of the Hall circuit; the output voltage signal of the Hall element is amplified to a numerical range (such as 0- +/-5V) suitable for measurement and acquisition by the amplifying circuit.
For example, the output voltage signal of the Hall element (for a microwave power of 10mW-100mW, a frequency range of 2GHz-6GHz, and an output voltage of 10-100 mu V generally) is amplified by an amplifying circuit to a numerical range (such as 0- + -5V) suitable for measurement and acquisition.
As a further implementation, the microwave power measurement method has a large power dynamic range, and can meet the linear performance of the voltage-power relationship in a very wide power range;
the microwave power measuring method has a large frequency dynamic range, and can meet the linearity performance of the voltage-power relation in a very wide frequency range.
The invention increases the linear detection range of the microwave power of the detection crystal method in principle, reduces fitting parameters to 1 (while the quadratic function fitting parameters of the detection crystal method are at least 2), can furthest reduce the time consumed by power calculation, and provides the maximum convenience for hardware calculation; meanwhile, the measuring method of the invention keeps the advantages of bandwidth, response speed and power dynamic range, and can simultaneously meet the requirements of broadband, linear performance, quick response, large dynamic range of measured power and the like; the method can be flexibly suitable for microwave power measurement under various orthogonal electromagnetic field distribution conditions by using different Hall elements, different circuit designs, different fixed structure designs, different fixed material selections, different amplifying circuit selections and the like, and has wide application prospect and economic value in the fields of scientific research, production, communication, military and the like.
Compared with a calorimeter, the invention has the advantages of better linear performance, quick response, high precision and the like on the basis of keeping the advantage of wider bandwidth of the calorimeter. Compared with the detection crystal method, the invention not only maintains the advantages of wider bandwidth, smaller error, quick response time and the like, but also increases the linear detection range of the microwave power of the detection crystal method, simultaneously reduces fitting parameters to 1 (but the quadratic function fitting parameters of the detection crystal method are at least 2), can furthest reduce the time consumed by power calculation, and provides the greatest convenience for hardware calculation.
Example 2
As shown in fig. 2, the difference between the present embodiment and embodiment 1 is that the present embodiment provides a hall effect based microwave power measurement system, which supports a hall effect based microwave power measurement method described in embodiment 1; the system comprises:
The Hall element 1 is arranged in a microwave orthogonal electromagnetic field, takes a microwave self-alternating electric field as an external electric field and takes a microwave self-alternating magnetic field as an external magnetic field under the condition of not adding any external electric field and magnetic field, and outputs direct-current Hall voltage; the hall element 1 includes a metal or a semiconductor;
A hall circuit 2, wherein the hall circuit 2 is arranged around the hall element 1, and the hall circuit 2 is suitable for a circuit structure of microwave field distribution; the Hall circuit 2 is used for measuring the direct-current Hall voltage output by the Hall element;
a supporting and fixing structure 3 made of a nonmetallic material and used for fixing the Hall element 1 in a microwave orthogonal electromagnetic field;
An amplifying circuit 4, wherein an input end of the amplifying circuit 4 is connected with an output end of the Hall circuit 2, and an output end of the amplifying circuit 4 outputs an amplified voltage signal; the amplifying circuit 4 is used for amplifying the output voltage of the Hall element 1 according to the measured microwave power range to amplify the voltage signal to a numerical range (such as 0- +/-5V) suitable for measurement and acquisition; for example, the output voltage signal of the hall element 1 (for a microwave power of 10mW-100mW, a frequency range of 2GHz-6GHz, and an output voltage of typically 10-100 μv) is amplified by the amplifying circuit 4 to a range of values (e.g., 0- ±5V) suitable for measurement and acquisition.
And the amplified voltage signal is subjected to voltage power conversion to realize calculation of microwave power, specifically, the calculation can be realized by a linear fitting mode and an interpolation mode, and the calculation can be realized by a software mode and a hardware mode.
As a further implementation, the microwave orthogonal electromagnetic field includes coaxial lines, microstrip lines, and spatial plane waves.
As a further implementation, the hall circuit 2, the hall element 1 and the microwave transmission/emission structure are integrated and fixed to realize impedance matching; further, the voltage output from the hall element 1 gives microwave power.
Specifically, the linear coefficient is obtained by performing linear fitting and calibration on the output voltage and the microwave power of the Hall element 1 through a power source, a sweep frequency source, a power meter or other instruments.
As a further implementation, the microwave power measurement method has a large power dynamic range, and can meet the linear performance of the voltage-power relationship in a very wide power range;
the microwave power measuring method has a large frequency dynamic range, and can meet the linearity performance of the voltage-power relation in a very wide frequency range.
The invention increases the linear detection range of the microwave power of the detection crystal method in principle, reduces fitting parameters to 1 (while the quadratic function fitting parameters of the detection crystal method are at least 2), can furthest reduce the time consumed by power calculation, and provides the maximum convenience for hardware calculation; meanwhile, the measurement system maintains the advantages of bandwidth, response speed and power dynamic range, and can simultaneously meet the requirements of broadband, linear performance, quick response, large dynamic range of measured power and the like; the system of the invention can be flexibly suitable for microwave power measurement under various orthogonal electromagnetic field distribution conditions by using different Hall elements 1, different circuit designs, different fixed structure designs, different fixed material selections, different amplifying circuit selections and the like, and has wide application prospect and economic value in the fields of scientific research, production, communication, military and the like.
Example 3
As shown in fig. 2, this embodiment differs from embodiment 2 in that the voltage signal after the amplification processing is subjected to voltage power conversion to achieve calculation of microwave power. The system further comprises a microwave power calculation unit 5;
the microwave power calculation unit 5 is configured to multiply the amplified voltage signal with a linear coefficient to obtain microwave power.
The calculation formula of the microwave power in the microwave power calculation unit 5 is as follows:
P＝kVeff
wherein P is microwave power, k is a linear coefficient, and V eff is output voltage of the Hall element.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the scope of the invention, but to limit the invention to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (8)
1. The microwave power measurement method based on the Hall effect is characterized in that the Hall effect is used as a principle, a Hall element is placed in a microwave orthogonal electromagnetic field, a microwave self-alternating electric field is used as an external electric field, and a microwave self-alternating magnetic field is used as an external magnetic field under the condition that no external electric field or magnetic field is added; measuring the output voltage of the Hall element through a Hall circuit to realize the measurement of microwave power;
the output voltage of the Hall element is measured, so that the measurement of microwave power is realized; the calculation formula of the microwave power is as follows:
P＝kVeff
wherein P is microwave power, k is a linear coefficient, and V eff is output voltage of the Hall element;
The linear coefficient is obtained by performing linear fitting and calibration on the output voltage of the Hall element and the microwave power through a power source, a sweep frequency source or a power meter.
2. The method of claim 1, wherein the microwave orthogonal electromagnetic field comprises a coaxial line, a microstrip line, and a spatial plane wave.
3. The method for measuring microwave power based on the Hall effect according to claim 1, wherein the Hall element is placed in a microwave orthogonal electromagnetic field, and the Hall element is fixed in the microwave orthogonal electromagnetic field by using a support structure made of a nonmetallic material.
4. The method for measuring microwave power based on the hall effect according to claim 1, wherein the hall circuit is arranged around the hall element, and the output voltage of the hall element is measured by the hall circuit;
The hall element includes a metal or a semiconductor.
5. The method of claim 4, wherein the hall circuit, the hall element and the microwave transmission/emission structure are integrated and fixed to achieve impedance matching.
6. The method for measuring microwave power based on the Hall effect according to claim 4, wherein an amplifying circuit is connected to the output end of the Hall circuit according to the measured microwave power range; and the output voltage signal of the Hall element is amplified to a numerical range suitable for measurement and acquisition by the amplifying circuit.
7. The method for measuring microwave power based on the hall effect according to any one of claims 1 to 6, wherein the power dynamic range of the method is large, and the linear performance of the voltage-power relationship can be satisfied in a wide power range;
The microwave power measuring method has a large frequency dynamic range, and can meet the linearity performance of the voltage-power relation in a wide frequency range.
8. A hall effect based microwave power measurement system supporting a hall effect based microwave power measurement method according to any one of claims 1 to 7; the system comprises:
The Hall element is arranged in the microwave orthogonal electromagnetic field, takes the microwave self-alternating electric field as an external electric field and takes the microwave self-alternating magnetic field as an external magnetic field under the condition of not adding any external electric field and magnetic field, and outputs direct-current Hall voltage; the hall element includes a metal or a semiconductor;
The Hall circuit is arranged around the Hall element and is used for measuring the direct-current Hall voltage output by the Hall element;
the support fixing structure is made of nonmetallic materials and is used for fixing the Hall element in a microwave orthogonal electromagnetic field;
The input end of the amplifying circuit is connected with the output end of the Hall circuit, and the output end of the amplifying circuit outputs an amplified voltage signal; the amplifying circuit is used for amplifying the output voltage of the Hall element according to the measured microwave power range, so that the voltage signal is amplified to a numerical range suitable for measurement and acquisition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210870736.9A CN115184668B (en) | 2022-07-22 | Hall effect-based microwave power measurement method and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210870736.9A CN115184668B (en) | 2022-07-22 | Hall effect-based microwave power measurement method and system |
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| CN115184668A CN115184668A (en) | 2022-10-14 |
| CN115184668B true CN115184668B (en) | 2024-06-04 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4327416A (en) * | 1980-04-16 | 1982-04-27 | Sangamo Weston, Inc. | Temperature compensation system for Hall effect element |
| US5438258A (en) * | 1992-12-11 | 1995-08-01 | Kabushiki Kaisha Toshiba | Power multiplication circuit which reduces an offset voltage of a Hall element to zero |
| CN103308872A (en) * | 2013-05-13 | 2013-09-18 | 华南理工大学 | Combined type magnetic field sensor and weak magnetic field measuring device |
| CN103529287A (en) * | 2013-10-14 | 2014-01-22 | 国家电网公司 | Electric consumption information collecting system based on Hall sensor |
| CN108594006A (en) * | 2018-03-28 | 2018-09-28 | 南京邮电大学 | Microwave power detector based on Hall effect |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4327416A (en) * | 1980-04-16 | 1982-04-27 | Sangamo Weston, Inc. | Temperature compensation system for Hall effect element |
| US5438258A (en) * | 1992-12-11 | 1995-08-01 | Kabushiki Kaisha Toshiba | Power multiplication circuit which reduces an offset voltage of a Hall element to zero |
| CN103308872A (en) * | 2013-05-13 | 2013-09-18 | 华南理工大学 | Combined type magnetic field sensor and weak magnetic field measuring device |
| CN103529287A (en) * | 2013-10-14 | 2014-01-22 | 国家电网公司 | Electric consumption information collecting system based on Hall sensor |
| CN108594006A (en) * | 2018-03-28 | 2018-09-28 | 南京邮电大学 | Microwave power detector based on Hall effect |
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