CN115173826A - LTCC process-based resonant coupling filter with high Q value and high rectangular coefficient - Google Patents

Abstract

The invention relates to a high-Q-value high-rectangular-coefficient resonant coupling filter based on an LTCC process, which comprises five resonant units and four main coupling adjusting units, wherein the magnetic coupling strengths of the five resonant units can be adjusted by adjusting the sizes of conductive via posts and the distances among the conductive via posts through coupling adjustment between the adjacent resonant units, the overall coupling strength of an interstage coupling unit can be flexibly adjusted by adjusting the size of an interstage coupling capacitor, and the single-sided rectangular coefficient can be deepened by flexibly adjusting a cross-order coupling capacitor; in addition, the internal structure of the high-Q-value LC resonant coupling filter adopts a mirror symmetry layout mode, so that the internal space structure is reasonably optimized, the design and debugging difficulty is reduced, and errors in the production process are avoided, and the high-Q-value LC resonant coupling filter has higher controllability and better rectangular coefficient.

Description

LTCC process-based resonant coupling filter with high Q value and high rectangular coefficient

Technical Field

The invention relates to the technical field of filters, in particular to a high-Q-value high-rectangular-coefficient resonant coupling filter based on an LTCC (Low temperature Co-fired ceramic) process.

Background

With the rapid development of communication technology, the global communication industry is gradually advancing into the 5G era.

LTCC, i.e. low temperature co-fired ceramic, can realize that three large passive devices (resistors, capacitors, inductors) and various passive devices (such as filters, transformers, etc.) thereof are packaged in a multilayer wiring substrate, and are integrated with active devices (such as power MOS, transistors, IC modules, etc.) into a complete circuit system. The system is widely applied to mobile phones, bluetooth modules, GPS modules, WLAN modules, WIFI modules and the like in various systems; in addition, due to the high reliability of the products, the applications in the fields of automotive electronics, communication, aerospace, military, micro-electro-mechanical systems, sensor technology and the like are increasing day by day.

The 5G era comes, and LTCC plays an important role, because LTCC can adapt to heavy current and high temperature resistant, from the cell-phone, wear the device to fields such as automobile-used, all need use RF spare part, and LTCC is as key subassembly to the cell-phone is used, and for the cell-phone is used, the use quantity of 5G cell-phone just grows 40% than 4G by a wide margin, promotes the LTCC demand and grows by a wide margin.

LTCC bandpass filter implementations typically have three types: the first is a traditional parallel resonant band-pass filter, which is realized by a parallel resonant unit formed by connecting an inductor and a capacitor in parallel; the second is to adopt distributed capacitance polar plates, and realize the effect of a band-pass filter through the coupling between the polar plates; the third is realized by connecting a high-pass filter and a low-pass filter in series. The band-pass filters realized by the three structures have respective advantages and difficulties in manufacturing and designing. The traditional parallel resonance type structure band-pass filter has deeper near band suppression compared with the other two types, but the insertion loss of the pass band of the traditional parallel resonance type structure band-pass filter is continuously increased along with the increase of parallel resonance units, so that the loss of signals is difficult to control; the band-pass filter adopting the distributed structure has simple design, convenient debugging and balanced electrical property, but has higher requirement on the manufacturing process because the structure is mainly realized by coupling between the polar plates, is easy to cause problems in the laminating and cutting sintering processes of the LTCC membrane and has poor batch consistency; the band-pass filter adopting the structure of connecting the high-pass filter and the low-pass filter in series has the advantages of wider passband, better insertion loss, high signal fidelity, poorer out-of-band rejection, complex structure and difficult debugging.

Disclosure of Invention

In order to solve the technical problems, the invention aims to provide a resonant coupling filter with a high Q value and a high rectangular coefficient based on an LTCC process, the filter is simple in design and debugging difficulty, and errors in a production process are small.

In order to achieve the purpose, the invention adopts the following technical scheme:

a high Q value high rectangular coefficient resonant coupling filter based on LTCC process comprises a substrate, two input and output external electrodes arranged on two opposite sides of the substrate, and two ground external electrodes arranged on the other two opposite sides of the substrate, wherein the substrate is formed by stacking a plurality of dielectric plates including,

a first substrate on which a first ground layer is formed;

a second substrate stacked above the first substrate, and having a first conductor layer, a fifth conductor layer, a plurality of first conductive via pillars in the first conductor layer, and a plurality of fifth conductive via pillars in the fifth conductor layer formed thereon;

a third substrate stacked above the second substrate, and a second conductor layer, a third conductor layer and a fourth conductor layer are formed on the third substrate; a plurality of second conductive via pillars in the second conductor layer, a plurality of third conductive via pillars in the third conductor layer, and a plurality of fourth conductive via pillars in the fourth conductor layer;

the fourth substrate is stacked above the third substrate, and a sixth conductor layer is formed on the fourth substrate;

a fifth substrate stacked above the fourth substrate and having a seventh conductor layer, an eighth conductor layer, a ninth conductor layer, a tenth conductor layer and an eleventh conductor layer formed thereon, the plurality of first conductive via pillars, the plurality of second conductive via pillars, the plurality of third conductive via pillars, the plurality of fourth conductive via pillars and the plurality of fifth conductive via pillars being respectively located in the seventh conductor layer, the eighth conductor layer, the ninth conductor layer, the tenth conductor layer and the eleventh conductor layer,

the sixth substrate is stacked above the fifth substrate, a twelfth conductor layer is formed on the sixth substrate, and the third conductive through hole columns are located in the twelfth conductor layer;

a seventh substrate stacked above the sixth substrate, wherein a second ground layer is formed on the seventh substrate, output electrodes and input electrodes coupled to the input/output external electrodes extend from two ends of the second ground layer, and the plurality of first conductive via pillars, the plurality of second conductive via pillars, the plurality of third conductive via pillars, the plurality of fourth conductive via pillars, and the plurality of fifth conductive via pillars are all connected to the second ground layer;

wherein a plurality of first conductive via pillars in the plurality of dielectric plates are respectively communicated to form a first resonant inductor L1, a plurality of second conductive via pillars in the plurality of dielectric plates are respectively communicated to form a second resonant inductor L2, a plurality of third conductive via pillars are respectively communicated to form a first resonant inductor L3, a plurality of fourth conductive via pillars in the plurality of dielectric plates are respectively communicated to form a fourth resonant inductor L4, and a fifth conductive via pillar in the plurality of dielectric plates is respectively communicated to form a fifth resonant inductor L5,

the first conductor layer and the first grounding layer form a lower capacitor C1, the second conductor layer and the first grounding layer form a lower capacitor C2, the third conductor layer and the first grounding layer form a lower capacitor C3, the fourth conductor layer and the first grounding layer form a lower capacitor C4, the fifth conductor layer and the first grounding layer form a lower capacitor C5,

the first resonant inductor L1 is connected with the lower-ground capacitor C1 in parallel to form a resonant unit A, the second resonant inductor L2 is connected with the lower-ground capacitor C2 to form a resonant unit B, the third resonant inductor L3 is connected with the lower-ground capacitor C3 in parallel to form a resonant unit C, the fourth resonant inductor L4 is connected with the lower-ground capacitor C4 to form a resonant unit D, the fifth resonant inductor L5 and the lower-ground capacitor C5 form a resonant unit E, and the resonant unit A and the resonant unit B are arranged in a mirror image mode with the resonant unit C and the resonant unit D;

the second conductor layer and the first conductor layer form a coupling capacitor C12, the fourth conductor layer and the fifth conductor layer form a coupling capacitor C45, the sixth conductor layer and the second conductor layer and the fourth conductor layer form a cross-coupling capacitor C24, two sides of the twelfth conductor layer respectively extend to the upper parts of the eighth conductor layer and the tenth conductor layer, and the twelfth conductor layer and the eighth conductor layer respectively form a coupling capacitor C14 and a coupling capacitor C25.

As a preferable scheme: first resonance inductance L1, second resonance inductance L2, fourth resonance inductance L4, fifth resonance inductance L5 comprise two electrically conductive via post groups that the interval set up respectively, third resonance inductance L3 comprises an electrically conductive via post group.

As a preferable scheme: the sixth substrate is further provided with a first inductive coupling layer, one end of the first inductive coupling layer is connected to the grounded outer electrode, and the other end of the first inductive coupling layer is open to separate the first resonant inductor L1 from the second resonant inductor L2, and separate the third resonant inductor L3 from the fourth resonant inductor L4 from the fifth resonant inductor L5.

As a preferable scheme: an eighth substrate is further disposed between the sixth substrate and the seventh substrate, a thirteenth conductor layer, a fourteenth conductor layer, a fifteenth conductor layer, a sixteenth conductor layer and a seventeenth conductor layer are formed on the eighth substrate, and the first resonant inductor L1, the second resonant inductor L2, the third resonant inductor L3, the fourth resonant inductor L4 and the fifth resonant inductor respectively penetrate through the thirteenth conductor layer, the fourteenth conductor layer, the fifteenth conductor layer, the sixteenth conductor layer and the seventeenth conductor layer.

As a preferable scheme: and a second inductive coupling layer is further arranged on the eighth substrate, one end of the second inductive coupling layer is connected to the grounded outer electrode, and the other end of the second inductive coupling layer is open-circuited to separate the first resonant inductor L1 from the second resonant inductor L2, and separate the third resonant inductor L3 from the fourth resonant inductor L4 from the fifth resonant inductor L5.

As a preferable scheme: a ninth substrate is further disposed between the eighth substrate and the seventh substrate, two eighteenth conductor layers are formed on the ninth substrate, one eighteenth conductor layer forms a cross-coupling capacitor C14 with the thirteenth conductor layer and the sixteenth conductor layer, and the other eighteenth conductor layer forms a cross-coupling capacitor C25 with the fourteenth conductor layer and the seventeenth conductor layer.

As a preferable scheme: still be equipped with the tenth base plate between ninth base plate and the seventh base plate, be formed with nineteenth conductor layer, twentieth conductor layer, twenty first conductor layer, twenty second conductor layer and twenty third conductor layer on the tenth base plate, first resonance inductance L1, second resonance inductance L2, third resonance inductance L3, fourth resonance inductance L4, fifth resonance inductance run through nineteenth conductor layer, twentieth conductor layer, twenty first conductor layer, twenty second conductor layer and twenty third conductor layer respectively.

As a preferable scheme: a third inductive coupling layer is further formed on the tenth substrate, one end of the third inductive coupling layer is connected to the grounded outer electrode, and the other end of the third inductive coupling layer is open-circuited to separate the first resonant inductor L1 from the second resonant inductor L2, and separate the third resonant inductor L3 from the fourth resonant inductor L4 from the fifth resonant inductor L5.

Compared with the prior art, the invention has the beneficial effects that:

the filter comprises five resonance units and four main coupling adjusting units, wherein the resonance units innovatively use a porous column parallel inductor framework, so that the Q value of the inductor is greatly increased; the coupling adjustment between the adjacent resonance units can adjust the magnetic coupling strength of the five resonance units by adjusting the size of the conductive through hole column and the distance between the conductive through hole columns, and the overall coupling strength of the interstage coupling unit can be flexibly adjusted by adjusting the size of the interstage coupling capacitor, so that the stepped coupling capacitor can be flexibly adjusted to deepen the unilateral rectangular coefficient; in addition, the internal structure of the high-Q-value LC resonant coupling filter adopts a mirror symmetry layout mode, the internal space structure is reasonably optimized, the design and debugging difficulty is reduced, errors in the production process are avoided, and the high-Q-value LC resonant coupling filter has higher operability and better rectangular coefficient.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application.

FIG. 1 is a schematic diagram of the overall structure of the filter of the present invention;

FIG. 2 is a schematic diagram of the internal structure of the filter of the present invention;

FIG. 3 is an equivalent circuit diagram of the filter of the present invention;

fig. 4 to 14 are schematic views of an eleventh substrate to a first substrate of the filter of the present invention;

fig. 15 is a graph of the frequency response of the filter of the present invention.

Detailed Description

The invention is further described with reference to the following figures and examples.

In order to more clearly illustrate the technical embodiments of the present invention in detail, the present invention is further described in detail below with reference to the accompanying drawings.

As shown in fig. 1 to 14, a high Q-value high-rectangular-index resonant coupled filter based on LTCC process comprises a substrate 1, two input and output external electrodes 2 and two ground external electrodes 3, the two input and output external electrodes 2 are disposed on two opposite sides of the substrate 1, the two ground external electrodes 3 are disposed on the other two opposite sides of the substrate 1, the substrate 1 is formed by stacking a plurality of dielectric plates, and the plurality of dielectric plates include,

a first substrate on which a first ground layer 9 is formed, both ends of the first ground layer 9 being further provided with a ground rectangular block 91;

a second substrate stacked above the first substrate and having a first conductor layer 480, a fifth conductor layer 880, a plurality of first conductive via pillars 400 in the first conductor layer 480, and a plurality of fifth conductive via pillars 800 in the fifth conductor layer 880 formed thereon;

a third substrate stacked above the second substrate, and on which a second conductor layer 570, a third conductor layer 670 and a fourth conductor layer 770 are formed; a plurality of second conductive via pillars 500 in the second conductor layer 570, a plurality of third conductive via pillars 600 in the third conductor layer 670, and a plurality of fourth conductive via pillars 700 in the fourth conductor layer 770;

a fourth substrate stacked above the third substrate and having a sixth conductive layer 661 formed thereon;

a fifth substrate stacked above the fourth substrate and having a seventh conductor layer 450, an eighth conductor layer 550, a ninth conductor layer 650, a tenth conductor layer 750, and an eleventh conductor layer 850 formed thereon, the plurality of first conductive via pillars 400, the plurality of second conductive via pillars 500, the plurality of third conductive via pillars 600, the plurality of fourth conductive via pillars 700, and the plurality of fifth conductive via pillars 800 being located in the seventh conductor layer 450, the eighth conductor layer 550, the ninth conductor layer 650, the tenth conductor layer 750, and the eleventh conductor layer 850, respectively,

a sixth substrate stacked above the fifth substrate, wherein a twelfth conductor layer 640 is formed on the sixth substrate, and the plurality of third conductive via pillars 600 are located in the twelfth conductor layer 640;

a seventh substrate stacked above the sixth substrate, wherein a second ground layer 10 is formed on the seventh substrate, an output electrode 11 and an input electrode 12 coupled to the input/output external electrode 2 extend from two ends of the second ground layer 10, and the plurality of first conductive via pillars 400, the plurality of second conductive via pillars 500, the plurality of third conductive via pillars 600, the plurality of fourth conductive via pillars 700, and the plurality of fifth conductive via pillars 800 are all connected to the second ground layer 10;

wherein, the plurality of first conductive via pillars 400 in the plurality of dielectric plates are respectively communicated to form a first resonant inductor L1, the plurality of second conductive via pillars 500 in the plurality of dielectric plates are respectively communicated to form a second resonant inductor L2, the plurality of third conductive via pillars 600 are respectively communicated to form a first resonant inductor L3, the plurality of fourth conductive via pillars 700 in the plurality of dielectric plates are respectively communicated to form a fourth resonant inductor L4, the plurality of fifth conductive via pillars 800 in the dielectric plates are respectively communicated to form a fifth resonant inductor L5,

first conductor layer 480 forms a lower capacitor C1 with first ground plane 9, second conductor layer 580 forms a lower capacitor C2 with first ground plane 9, third conductor layer 680 forms a lower capacitor C3 with first ground plane 9, fourth conductor layer 780 forms a lower capacitor C4 with first ground plane 9, fifth conductor layer 880 forms a lower capacitor C5 with first ground plane 9,

the first resonant inductor L1 is connected with the lower-ground capacitor C1 in parallel to form a resonant unit A, the second resonant inductor L2 is connected with the lower-ground capacitor C2 to form a resonant unit B, the third resonant inductor L3 is connected with the lower-ground capacitor C3 in parallel to form a resonant unit C, the fourth resonant inductor L4 is connected with the lower-ground capacitor C4 to form a resonant unit D, the fifth resonant inductor L5 and the lower-ground capacitor C5 form a resonant unit E, and the resonant unit A and the resonant unit B are arranged in a mirror image mode with the resonant unit C and the resonant unit D;

the second conductor layer 580 and the first conductor layer 480 form a coupling capacitor C12, the fourth conductor layer 780 and the fifth conductor layer 880 form a coupling capacitor C45, the sixth conductor layer 661, the second conductor layer 580 and the fourth conductor layer 780 form a cross-coupling capacitor C24, two sides of the twelfth conductor layer 640 extend to the top of the eighth conductor layer 550 and the top of the tenth conductor layer 750, and the eighth conductor layer 550 and the tenth conductor layer 750 form a coupling capacitor C14 and a coupling capacitor C25, respectively.

The resonant inductor innovatively uses a multi-conductive via post parallel inductor architecture, so that the Q value of the inductor is greatly increased; each resonance inductor and the corresponding lower ground capacitor form a corresponding resonance unit in a parallel connection mode. The value of the resonance inductance can be adjusted through the number of the conductive via posts and the length of the conductive via posts; the magnitude of the lower ground capacitance can be adjusted by adjusting the distance between the corresponding conductive layer and the first ground layer or adjusting the area of the corresponding conductive layer, and the resonant frequency of the resonant unit can be adjusted integrally with the magnitudes of the resonant inductance and the lower ground capacitance.

First resonance inductance L1, second resonance inductance L2, fourth resonance inductance L4, fifth resonance inductance L5 comprise two electrically conductive via post groups that the interval set up respectively, third resonance inductance L3 comprises an electrically conductive via post group.

The sixth substrate is further provided with a first inductive coupling layer 230, one end of the first inductive coupling layer 230 is connected to the grounded outer electrode 3, and the other end of the first inductive coupling layer 230 is open-circuited to separate the first resonant inductor L1 from the second resonant inductor L2, and separate the third resonant inductor L3 from the fourth resonant inductor L4 from the fifth resonant inductor L5.

An eighth substrate is further disposed between the sixth substrate and the seventh substrate, a thirteenth conductor layer 430, a fourteenth conductor layer 530, a fifteenth conductor layer 630, a sixteenth conductor layer 730, and a seventeenth conductor layer 830 are formed on the eighth substrate, and the first resonant inductor L1, the second resonant inductor L2, the third resonant inductor L3, the fourth resonant inductor L4, and the fifth resonant inductor respectively penetrate through the thirteenth conductor layer 420, the fourteenth conductor layer 520, the fifteenth conductor layer 620, the sixteenth conductor layer 720, and the seventeenth conductor layer 820.

A second inductive coupling layer 220 is further disposed on the eighth substrate, one end of the second inductive coupling layer 220 is connected to the grounded outer electrode 3, and the other end of the second inductive coupling layer 220 is open-circuited to separate the first resonant inductor L1 from the second resonant inductor L2, and separate the third resonant inductor L3 from the fourth resonant inductor L4 from the fifth resonant inductor L5.

A ninth substrate is further disposed between the eighth substrate and the seventh substrate, two eighteenth conductor layers 210 are formed on the ninth substrate, one eighteenth conductor layer 210 forms a cross-coupling capacitor C14 with the thirteenth conductor layer 430 and the sixteenth conductor layer 730, and the other eighteenth conductor layer 210 forms a cross-coupling capacitor C25 with the fourteenth conductor layer 530 and the seventeenth conductor layer 830.

A tenth substrate is further arranged between the ninth substrate and the seventh substrate, a nineteenth conductor layer 410, a twentieth conductor layer 510, a twenty-first conductor layer 610, a twenty-second conductor layer 710 and a twenty-third conductor layer 810 are formed on the tenth substrate, and the first resonant inductor L1, the second resonant inductor L2, the third resonant inductor L3, the fourth resonant inductor L4 and the fifth resonant inductor respectively penetrate through the nineteenth conductor layer 410, the twentieth conductor layer 510, the twenty-first conductor layer 610, the twenty-second conductor layer 710 and the twenty-third conductor layer 810.

A third inductive coupling layer 200 is further formed on the tenth substrate, one end of the third inductive coupling layer 200 is connected to the grounded external electrode 3, and the other end of the third inductive coupling layer is open-circuited to separate the first resonant inductor L1 from the second resonant inductor L2, and separate the third resonant inductor L3 from the fourth resonant inductor L4 from the fifth resonant inductor L5. The inductive coupling mode is easier to form a transmission zero at a high-frequency near band of a filter passband, and is applied mostly when the inductive coupling mode is used for filtering out high-frequency stray types outside the passband.

The filter comprises five LC resonance units and four main coupling adjusting units, wherein magnetic coupling formed between conductive via posts of two adjacent resonance units of the main coupling adjusting units and coupling capacitors between the two adjacent resonance units form an integral main coupling adjusting unit, the capacitive coupling of the coupling units can be adjusted by adjusting the area of the coupling capacitors, and the magnetic coupling strength between the inductive posts is adjusted by the space and the shape of the conductive via posts of the two resonance units.

The main coupling adjusting unit is a main adjusting unit, and the main adjusting unit can adjust the coupling strength by adjusting the strength of magnetic coupling and capacitive coupling, so as to adjust the bandwidth and frequency of the high-Q LC resonant coupling filter, so that the transmission zero position can be adjusted at will, and stray signals of different frequency points can be effectively inhibited. That is, the high Q LC resonance filter of the present invention has the advantages of high operability and high suppression.

In order to increase the inhibition capability at the high frequency outside the passband, coupling capacitors are added between the resonance unit A and the resonance unit D, between the resonance unit B and the resonance unit E, and between the resonance unit B and the resonance unit D; the invention has 5 resonance units, and can realize wider bandwidth and deeper out-of-passband high-frequency near-band rejection capability by matching with the coupling adjustment units among different resonance units, and the corresponding frequency response diagram is shown in fig. 15.

The above description is a preferred embodiment of the present invention, and the present invention is not limited to the above embodiment. Other embodiments based on the embodiments of the present invention, which can be obtained by those skilled in the art through various modifications, equivalent substitutions and improvements without inventive work, should be included within the scope of protection of the claims.

Claims (8)

1. High Q value high rectangular coefficient's resonant mode coupling filter based on LTCC technology, including base member (1), input and output outer electrode (2) and ground connection outer electrode (3), two input and output outer electrode (2) set up in two relative sides of base member (1), two ground connection outer electrode (3) set up in two other relative sides of base member (1), its characterized in that: the base body (1) is formed by stacking a plurality of dielectric plates including,

a first substrate on which a first ground layer (9) is formed;

a second substrate stacked above the first substrate and having a first conductor layer (480), a fifth conductor layer (880), a plurality of first conductive via pillars (400) in the first conductor layer (480), and a plurality of fifth conductive via pillars (800) in the fifth conductor layer (880) formed thereon;

a third substrate stacked above the second substrate and having a second conductor layer (570), a third conductor layer (670) and a fourth conductor layer (770) formed thereon; a plurality of second conductive via pillars (500) in the second conductor layer (570), a plurality of third conductive via pillars (600) in the third conductor layer (670), a plurality of fourth conductive via pillars (700) in the fourth conductor layer (770);

a fourth substrate stacked above the third substrate and having a sixth conductive layer (661) formed thereon;

a fifth substrate stacked above the fourth substrate and having a seventh conductor layer (450), an eighth conductor layer (550), a ninth conductor layer (650), a tenth conductor layer (750), and an eleventh conductor layer (850) formed thereon, the plurality of first conductive via pillars (400), the plurality of second conductive via pillars (500), the plurality of third conductive via pillars (600), the plurality of fourth conductive via pillars (700), and the plurality of fifth conductive via pillars (800) being respectively located in the seventh conductor layer (450), the eighth conductor layer (550), the ninth conductor layer (650), the tenth conductor layer (750), and the eleventh conductor layer (850),

a sixth substrate stacked above the fifth substrate, wherein a twelfth conductor layer (640) is formed on the sixth substrate, and the plurality of third conductive via pillars (600) are located in the twelfth conductor layer (640);

a seventh substrate, which is stacked above the sixth substrate, and on which a second ground layer (10) is formed, and both ends of the second ground layer (10) respectively extend out an output electrode (11) and an input electrode (12) coupled to the input/output external electrode (2), and the plurality of first conductive via pillars (400), the plurality of second conductive via pillars (500), the plurality of third conductive via pillars (600), the plurality of fourth conductive via pillars (700), and the plurality of fifth conductive via pillars (800) are all connected to the second ground layer (10);

wherein a plurality of first conductive via posts (400) in the plurality of dielectric plates are respectively communicated to form a first resonant inductor L1, a plurality of second conductive via posts (500) in the plurality of dielectric plates are respectively communicated to form a second resonant inductor L2, a plurality of third conductive via posts (600) are respectively communicated to form a first resonant inductor L3, a fourth conductive via post (700) in the plurality of dielectric plates is respectively communicated to form a fourth resonant inductor L4, and a fifth conductive via post (800) in the plurality of dielectric plates is respectively communicated to form a fifth resonant inductor L5,

the first conductor layer (480) and the first grounding layer (9) form a lower grounding capacitor C1, the second conductor layer (580) and the first grounding layer (9) form a lower grounding capacitor C2, the third conductor layer (680) and the first grounding layer (9) form a lower grounding capacitor C3, the fourth conductor layer (780) and the first grounding layer (9) form a lower grounding capacitor C4, the fifth conductor layer (880) and the first grounding layer (9) form a lower grounding capacitor C5,

the first resonance inductor L1 is connected with the lower ground capacitor C1 in parallel to form a resonance unit A, the second resonance inductor L2 is connected with the lower ground capacitor C2 to form a resonance unit B, the third resonance inductor L3 is connected with the lower ground capacitor C3 in parallel to form a resonance unit C, the fourth resonance inductor L4 is connected with the lower ground capacitor C4 to form a resonance unit D, the fifth resonance inductor L5 is connected with the lower ground capacitor C5 to form a resonance unit E, and the resonance unit A and the resonance unit B are arranged in a mirror image mode with the resonance unit C and the resonance unit D;

the second conductor layer (580) and the first conductor layer (480) form a coupling capacitor C12, the fourth conductor layer (780) and the fifth conductor layer (880) form a coupling capacitor C45, the sixth conductor layer (661), the second conductor layer (580) and the fourth conductor layer (780) form a cross-coupling capacitor C24, two sides of the twelfth conductor layer (640) extend to the positions above the eighth conductor layer (550) and the tenth conductor layer (750), and the eighth conductor layer (550) and the tenth conductor layer (750) form a coupling capacitor C14 and a coupling capacitor C25 respectively.

2. The LTCC process based high Q and high squareness factor resonant coupled filter of claim 1, wherein: first resonance inductance L1, second resonance inductance L2, fourth resonance inductance L4, fifth resonance inductance L5 comprise two electrically conductive via post groups that the interval set up respectively, third resonance inductance L3 comprises an electrically conductive via post group.

3. The LTCC process-based resonant coupled filter with high Q and high squareness factor of claim 1, wherein: the sixth substrate is further provided with a first inductive coupling layer (230), one end of the first inductive coupling layer (230) is connected to the grounded outer electrode (3), and the other end of the first inductive coupling layer is open-circuited to separate the first resonant inductor L1 from the second resonant inductor L2, and separate the third resonant inductor L3 from the fourth resonant inductor L4 from the fifth resonant inductor L5.

4. The LTCC process based high Q and high squareness factor resonant coupled filter of claim 1, wherein: an eighth substrate is further disposed between the sixth substrate and the seventh substrate, a thirteenth conductor layer (430), a fourteenth conductor layer (530), a fifteenth conductor layer (630), a sixteenth conductor layer (730) and a seventeenth conductor layer (830) are formed on the eighth substrate, and the first resonant inductor L1, the second resonant inductor L2, the third resonant inductor L3, the fourth resonant inductor L4 and the fifth resonant inductor respectively penetrate through the thirteenth conductor layer (420), the fourteenth conductor layer (520), the fifteenth conductor layer (620), the sixteenth conductor layer (720) and the seventeenth conductor layer (820).

5. The LTCC process based high Q and high squareness factor resonant coupled filter of claim 4, wherein: and a second inductive coupling layer (220) is further arranged on the eighth substrate, one end of the second inductive coupling layer (220) is connected to the grounded outer electrode (3), and the other end of the second inductive coupling layer is opened to separate the first resonant inductor L1 from the second resonant inductor L2, and separate the third resonant inductor L3 from the fourth resonant inductor L4 from the fifth resonant inductor L5.

6. The LTCC process based high Q and high squareness factor resonant coupled filter of claim 4, wherein: a ninth substrate is further disposed between the eighth substrate and the seventh substrate, two eighteenth conductor layers (210) are formed on the ninth substrate, one eighteenth conductor layer (210) forms a cross-coupling capacitor C14 with the thirteenth conductor layer (430) and the sixteenth conductor layer (730), and the other eighteenth conductor layer (210) forms a cross-coupling capacitor C25 with the fourteenth conductor layer (530) and the seventeenth conductor layer (830).

7. The LTCC process based high Q and high squareness factor resonant coupled filter of claim 4, wherein: still be equipped with the tenth base plate between ninth base plate and the seventh base plate, be formed with nineteenth conductor layer (410), twentieth conductor layer (510), twenty first conductor layer (610), twenty second conductor layer (710) and twenty third conductor layer (810) on the tenth base plate, first resonance inductance L1, second resonance inductance L2, third resonance inductance L3, fourth resonance inductance L4, fifth resonance inductance run through nineteenth conductor layer (410), twentieth conductor layer (510), twenty first conductor layer (610), twenty second conductor layer (710) and twenty third conductor layer (810) respectively.

8. The LTCC process-based high-Q and high-squareness resonant coupled filter of claim 7, wherein: a third inductive coupling layer (200) is further formed on the tenth substrate, one end of the third inductive coupling layer (200) is connected to the grounded external electrode (3), and the other end of the third inductive coupling layer is open-circuited to separate the first resonant inductor L1 from the second resonant inductor L2, and separate the third resonant inductor L3 from the fourth resonant inductor L4 from the fifth resonant inductor L5.

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