CN115173222A - Tunable narrow linewidth semiconductor laser - Google Patents
Tunable narrow linewidth semiconductor laser Download PDFInfo
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- CN115173222A CN115173222A CN202210921849.7A CN202210921849A CN115173222A CN 115173222 A CN115173222 A CN 115173222A CN 202210921849 A CN202210921849 A CN 202210921849A CN 115173222 A CN115173222 A CN 115173222A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000002347 injection Methods 0.000 claims abstract description 37
- 239000007924 injection Substances 0.000 claims abstract description 37
- 230000008878 coupling Effects 0.000 claims abstract description 12
- 238000010168 coupling process Methods 0.000 claims abstract description 12
- 238000005859 coupling reaction Methods 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims 1
- 238000010408 sweeping Methods 0.000 claims 1
- 230000001427 coherent effect Effects 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
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- 238000004891 communication Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 3
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- 230000035559 beat frequency Effects 0.000 description 2
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- 230000001066 destructive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
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Abstract
The invention belongs to the field of semiconductor lasers, and discloses a tunable narrow linewidth semiconductor laser which comprises a laser and a micro-ring outer cavity, wherein laser output by the rear end face of a single-mode laser enters the micro-ring outer cavity through micro-ring outer cavity straight waveguide coupling, the laser entering the micro-ring outer cavity resonates in the micro-ring outer cavity and then is injected into the laser through the same straight waveguide, in an injection locking range, the output frequency of the laser is determined by the resonant frequency of the micro-ring outer cavity, so that self-injection locking of the laser is realized, and injection locking is always kept in a tuning process through tuning the resonant frequency of the micro-ring outer cavity, so that tunable narrow linewidth laser output is realized. The tunable narrow linewidth laser can realize modulation of continuous frequency, has the advantages of narrow linewidth of output laser and meeting continuous wave tuning, and can be applied to the field of coherent detection.
Description
Technical Field
The invention belongs to the field of semiconductor lasers, and particularly relates to a tunable narrow linewidth semiconductor laser.
Background
The narrow-linewidth semiconductor laser has the advantages of low noise, good monochromaticity and the like, and is widely applied to a laser radar (LiDAR) system, the field of coherent communication and a coherent detection system.
The narrow linewidth laser is mainly used in the fields of coherent optical communication and coherent detection, and can be used in the fields of gas detection, pressure sensing and the like. Coherent optical communication is sensitive to phase noise because it requires a physical quantity of phase to increase communication capacity, and therefore a narrow linewidth laser is required to reduce the influence of phase noise on communication quality.
Frequency Modulated Continuous Wave (Frequency Modulated Continuous Wave) laser radar emits a Frequency continuously tuned signal and receives a signal reflected by an object, the emitted signal and a signal at a receiving end carry out beat Frequency, and the distance and the speed of the object are simultaneously measured by measuring the beat Frequency (B, schwarz, "LIDAR: mapping the world in 3D,", nat. Photonics [ J]:429-430). The distance of maximum detection of the laser and the signal-to-noise ratio of the received signal at the receiving end are related to the line width of the laser (b. Behroozpor, p.a.m. sandborn, et al]IEEE Communications Magazine, vol.55,2017, PP: 135-142). Meanwhile, the accuracy Δ R of the detection is related to the tuned bandwidth B:
where c is the speed of light. Therefore, the narrow linewidth tunable laser is very important in the frequency modulation continuous wave laser radar system.
First, the laser is a single mode laser, which can be a distributed feedback laser, a distributed Bragg reflector laser, and a large-range tunable laser; secondly, a low-noise current source is used for reducing the influence of external noise on the line width of the laser; third, the linewidth of the laser is inversely proportional to the equivalent cavity length of the laser, and in order to obtain a narrow linewidth laser, the equivalent cavity length of the laser should be increased as much as possible.
At present, lasers such as a distributed feedback laser, a distributed bragg reflection laser and the like are influenced by frequency noise, and narrow linewidth linear frequency modulation is difficult to realize.
Therefore, a novel tunable narrow linewidth laser is needed to meet the requirement of the FMCW lidar on the chirped light source by realizing the chirping of the narrow linewidth laser.
Disclosure of Invention
The invention aims to provide a tunable narrow linewidth semiconductor laser to solve the defects in the prior art.
In order to realize the purpose of the invention, the technical scheme adopted by the invention is as follows:
a tunable narrow linewidth semiconductor laser comprises a laser, wherein the input end and the output end of the laser are plated with anti-reflection films, the output laser enters a micro-ring outer cavity through straight waveguide coupling and is coupled with a micro-ring, the micro-ring is used for resonating a part of laser and scattering the laser back into the laser, when the frequency of the returned laser meets a locking condition, self-injection locking is formed, the frequency of the micro-ring outer cavity can be adjusted, and the frequency difference between the micro-ring outer cavity and the laser is in a self-injection locking range.
Further, the micro-ring and the straight waveguide are both arranged in the micro-ring outer cavity, and the micro-ring outer cavity and the laser are arranged in a clearance mode.
Further, the laser is a single mode laser, a distributed feedback laser or a distributed bragg reflector laser.
Further, the micro-ring is a silicon-based thin film lithium niobate micro-ring, a silicon micro-ring, an aluminum nitride micro-ring or a silicon nitride micro-ring.
Further, the micro-ring outer cavity is modulated by an electro-optic effect or is modulated by a thermal effect.
Further, the range of self-injection locking is determined by the following formula:
wherein f is d Is the mode spacing, alpha is the linewidth enhancement factor, I 0 The optical power injected for the original laser, I 1 For the optical power injected by the injection laser, Δ ω is the difference between the frequency of the laser light of the original laser and the frequency of the injected laser, and when the laser scans in this frequency range, the laser is injection lockedAnd (4) determining.
Furthermore, the micro-ring is located in the micro-ring resonant cavity, the straight waveguide couples the laser into the micro-ring resonant cavity, and the coupling mode is direct coupling or lens coupling.
The invention has the following beneficial effects: a part of laser output by the laser returns to the straight waveguide in the micro-ring resonant cavity and is coupled, and returns to the laser again, when the frequency returned to the laser is in a certain interval, self-injection locking is formed, at the moment, the frequency of the micro-ring external cavity is independently adjusted, or the frequency of the micro-ring external cavity and the frequency of the laser are adjusted together, so that the micro-ring external cavity and the laser always correspond to the specific frequency of the returned laser, the returned laser is always in a self-injection locking state, the other part of laser is output through the output straight waveguide, and the frequency of the laser output by the output straight waveguide is directly determined by the resonance frequency of the micro-ring.
Drawings
FIG. 1 is an overall structural view of the present invention;
FIG. 2 is the working principle of the micro-ring external cavity of the laser of the present invention;
FIG. 3 is a schematic diagram of the variation of the laser output frequency with time in accordance with the present invention;
FIG. 4 is a schematic diagram showing the variation of the resonant frequency of the micro-ring external cavity with time according to the present invention;
FIG. 5 is a schematic diagram of a transmission spectrum of the micro-ring resonator according to the present invention;
FIG. 6 is a schematic diagram of an external cavity power enhancement factor spectral line of the micro-ring resonator of the present invention;
FIG. 7 is a schematic diagram of an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to fig. 1 to 7 in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. The techniques used in the examples are conventional and well known to those skilled in the art, unless otherwise specified.
In addition, the features of the embodiments and the embodiments of the present invention may be combined with each other without conflict.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, or orientations or positional relationships that the products of the present invention conventionally lay out when in use, or orientations or positional relationships that are conventionally understood by those skilled in the art, which are merely for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless otherwise explicitly stated or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1: this example is a schematic structural description of the present invention and necessary implementation conditions:
referring to fig. 1, a tunable narrow linewidth semiconductor laser includes a laser 1, an anti-reflection film 2 is plated on both input and output ends of the laser 1, the output laser is coupled through a straight waveguide 3 and enters into a micro-ring external cavity 4 and is coupled with a micro-ring, the micro-ring is used for resonating a part of the laser and scattering it back into the laser 1, when the frequency of the returned laser meets a locking condition, a self-injection locking is formed, and the micro-ring external cavity 4 can adjust the resonant frequency of the micro-ring external cavity 4, so that the frequency difference between the resonant frequency of the micro-ring external cavity 4 and the laser 1 is within the range of the self-injection locking frequency.
Specifically, the output end and the output end of the laser 1 are plated with the anti-reflection film 2, and the anti-reflection film 2 is the prior art and is used for enabling laser to be completely output or injected and eliminating phase disturbance caused by laser reflection. Laser is emitted from the output end of the laser 1, is coupled with the straight waveguide 3 in the coupling area 5, enters the micro-ring external cavity 4 and is coupled with a micro-ring in the micro-ring external cavity 4, the micro-ring is arranged in the micro-ring resonant cavity 6, a part of laser returns to the straight waveguide 3 in the micro-ring resonant cavity 6 and is coupled, and returns to the laser 1 again, when the frequency returning to the laser 1 is in a certain interval, self-injection locking is formed, at the moment, the frequency of the micro-ring external cavity 4 is independently adjusted, or the frequencies of the micro-ring external cavity 4 and the laser 1 are adjusted together, namely, a tuning signal is directly loaded on the micro-ring external cavity 4, or simultaneously loaded on the micro-ring external cavity 4 and the laser 1, so that the tuning signal always corresponds to the specific frequency range of the returning laser, and the returning laser is always in a self-injection locking state, namely, the line width is compressed, and narrow line width is realized. And the other part of laser is output through the output straight waveguide 7, so that the frequency of the laser output by the output straight waveguide 7 is directly determined by the resonant frequency of the micro-ring external cavity 4, and the purpose of outputting narrow-linewidth laser can be realized within a self-injection locking range in a mode of directly modulating the resonant frequency of the micro-ring external cavity 4.
The working principles of the micro-ring outer cavity 4, the micro-ring resonant cavity 6 and the micro-ring are further explained as follows:
as shown in fig. 2, the micro-ring resonator 6 and the straight waveguide 3 are coupled to each other by evanescent waves, and when the laser light is coupled to the micro-ring resonator 6 by the straight waveguide 3, a part of the laser light is transmitted to the transmission end (output straight waveguide 7 end) by the straight waveguide 3, and a part of the laser light is coupled into the micro-ring. After the light coupled into the micro-ring is transmitted for a circle in the micro-ring resonant cavity 6, a part of the light is coupled into the straight waveguide 3 through evanescent waves again, and a part of the light is transmitted in the micro-ring resonant cavity 6 through the coupling region 5 continuously. The evanescent wave coupled into the straight waveguide 3 is coupled into the laser 1 through the rear end face of the laser 1, and when the injection locking condition is met, the output frequency of the laser 1 changes along with the resonant frequency of the micro-ring external cavity 4, so that the self-injection locking of the laser 1 is completed.
The working principle of the self-injection locking of the present invention is further explained below:
referring to fig. 3, the output frequency of the laser 1 is changed by changing the effective refractive index of the laser 1 by changing the current injected into the laser 1, as a function of time, for the output frequency of the laser 1. When the injected signal is periodically varied, the output frequency of the laser 1 is also periodically varied. However, the output frequency of the laser 1 does not vary linearly with time due to the influence of non-linearity and the like. When the difference between the change of the frequency of the laser 1 along with time and the change of the reflection peak value of the micro-ring along with time always meets the injection locking frequency range and the self-injection locking distance condition, namely the self-injection locking condition of the invention is achieved, during self-injection locking, the laser 1 is injected and locked by the micro-ring resonant cavity 6, the output frequency of the laser 1 changes along with the frequency of the resonance peak of the micro-ring, so that the self-injection locking of the laser 1 is realized, and in the locking process, the line width of the laser is compressed, so that the narrow line width output of the laser is realized. And simultaneously, the resonant frequency of the micro-ring external cavity 4 and the output frequency of the laser are adjusted, or the resonant frequency of the micro-ring external cavity 4 is independently adjusted to be always kept in an injection locking range, wherein the resonant frequency of the micro-ring external cavity 4 is linearly scanned in an electric regulation or thermal regulation mode, so that the linear scanning of the frequency in a large range can be realized.
The working principle of the modulation frequency of the micro-ring and the micro-ring external cavity 4 is further explained as follows:
fig. 4 shows a curve of the reflection peak frequency of the micro-ring external cavity 4 with time. The micro-ring has electro-optic effect (such as silicon-based thin film lithium niobate micro-ring) or thermo-optic effect (such as silicon-based micro-ring), so that the invention can change the refractive index of the micro-ring outer cavity 4 by adding a modulation signal on the micro-ring through the signal generator, thereby moving the reflection peak of the micro-ring, changing the position of the resonance frequency of the micro-ring, and further adjusting the resonance frequency of the micro-ring outer cavity 4.
Fig. 5 and 6 are transmission spectrum and power enhancement factor spectrum of the micro-ring resonator 6, respectively. It can be known from the figure that the spectral response of the micro-ring is periodic, when the micro-ring is in a resonance state, a power enhancement effect can be shown due to constructive interference of light in the cavity of the micro-ring, after the laser light resonated in the micro-ring is coupled to the straight waveguide, the laser light is reversely injected into the laser, and at this time, the light at the output end is in a destructive state. Therefore, by adjusting the position of the resonance peak of the micro-ring external cavity 4, the output frequency of the laser 1 and the resonance frequency of the micro-ring external cavity 4 always meet the self-injection locking range in the modulation process, thereby realizing the laser narrow linewidth output of the whole laser.
Further, the micro-ring and the straight waveguide 3 are both located in the micro-ring external cavity 4, and the micro-ring external cavity 4 is disposed in a gap with the laser 1.
Further, the laser 1 is a single mode laser, a distributed feedback laser or a distributed bragg reflector laser in the prior art.
Further, the micro-ring is a silicon-based thin film lithium niobate micro-ring, a silicon micro-ring, an aluminum nitride micro-ring or a silicon nitride micro-ring in the prior art.
When the micro-ring is the silicon-based thin film lithium niobate micro-ring, the signal is input through an electrode structure of ground-signal-ground (GSG), and the resonance frequency of the silicon-based lithium niobate thin film lithium niobate micro-ring is changed because the lithium niobate thin film lithium niobate material has an electro-optic effect. When the light of the laser 1 and the light returned from the lithium niobate silicon thin film micro-ring to the laser 1 satisfy the self-injection locking condition, the frequency of the output laser of the laser 1 is determined by the frequency of the laser injected from the lithium niobate silicon thin film micro-ring to the laser 1 within a certain range. And simultaneously modulating the laser 1 and the silicon-based lithium niobate thin film lithium niobate micro-ring to enable the frequency of the micro-ring to be changed and always kept in a self-injection locking range, thereby realizing tunable narrow-linewidth laser output.
Furthermore, the micro-ring outer cavity 4 is modulated by an electro-optic effect, that is, a signal is loaded on the micro-ring outer cavity 4 directly through an electrode on the micro-ring outer cavity 4; or thermo-optic modulation is carried out through a thermal effect, namely, a signal is loaded on the thermoelectric electrode through the thermoelectric effect, and the signal is transmitted to the micro-ring outer cavity 4 through the thermoelectric electrode.
Further, the range of self-injection locking is determined by the following equation:
wherein f is d Is the mode spacing, alpha is the linewidth enhancement factor, I 0 For the optical power injected by the original laser, I 1 For the injected optical power of the injection laser, Δ ω is the difference between the frequency of the original laser and the frequency of the injected laser, and when the laser 1 scans in this frequency range, the laser 1 is injection locked.
By the formula, the frequency range of injection locking can be determined.
Further, the micro-ring is located in the micro-ring resonant cavity 6, and the straight waveguide 3 couples the laser into the micro-ring resonant cavity 6 in a direct coupling mode or a lens coupling mode.
Example 2: in this embodiment, a technical solution of the present invention is described by a specific application example on the basis of embodiment 1, in this embodiment, a laser 1 is a distributed bragg reflector laser, and a microring is a silicon-based thin film lithium niobate microring:
as shown in fig. 7, the semiconductor amplifier device specifically includes a front semiconductor amplifier region 13, a front mirror region 14, an active region 15, a phase region 16, a rear mirror region 17, and a rear semiconductor amplifier region 18. The active region and the front and back semiconductor optical amplifier regions comprise an electrode 1, a lower waveguide cover layer 3, a passive waveguide layer 4, an active layer 8, an active waveguide layer 9, an upper waveguide cover layer 12, an ohmic contact layer 2 and an electrode 1 from bottom to top, wherein the ohmic contact layer 2 is a P-type heavily doped heavy-doping layerDoping concentration range of 10 19 ～10 20 cm -3 To provide sufficient carriers. The lower waveguide cover layer 3 is doped in an N type, the active layer 8 is not doped, and the upper waveguide cover layer 12 is doped in a P type.
The active region comprises an electrode 1, a lower waveguide cover layer 3, a passive waveguide layer 4, an active layer 10, an active waveguide layer 11, an upper waveguide cover layer 12, an ohmic contact layer 2 and the electrode 1 from bottom to top. The lower waveguide cover layer 3 is doped InP in an N type, the active layers 9, 10 and 11 are not doped, the upper waveguide cover layer 12 is doped in a P type, and the upper waveguide cover layer 12, the active layers 9, 10 and 11 and the lower waveguide cover layer 3 form an N-i-P structure together. The active layers 9, 10, 11 contain one or more quantum wells 10 and at least one or more lower and upper confinement layers 9, 11. The front mirror region 14, the phase region and the back mirror region 17 are removed in the manufacturing process of the active layer, the front mirror region 14 is manufactured with a uniform grating 7 on the lower waveguide layer, and the back mirror region is manufactured with a sampling grating 8 on the lower waveguide layer. The active area 15 provides gain, the front mirror area 14 and the rear mirror area 17 perform grating mode selection, the generated laser is coupled with the micro-ring outer cavity after being amplified by the rear semiconductor amplifier 18, the coupled light is injected into the active area of the laser after being amplified by the rear semiconductor amplifier 18, so that self-injection locking is completed, the laser is output after being amplified by the front semiconductor amplifier 13, the resonant frequency of the micro-ring is modulated, and the purpose of tunable narrow-line-width laser output can be realized.
The above-described embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various changes, modifications, alterations, and substitutions which may be made to the technical solutions of the present invention by those skilled in the art without departing from the spirit of the present invention shall fall within the protection scope defined by the claims of the present invention.
Claims (7)
1. A tunable narrow linewidth semiconductor laser comprising a laser (1), characterized in that: the laser comprises a laser device (1), wherein the input end and the output end of the laser device (1) are plated with anti-reflection films (2), laser output by the laser device is coupled through a straight waveguide (3), enters a micro-ring external cavity (4) and is coupled with a micro-ring, the micro-ring is used for resonating a part of laser and scattering the laser back into the laser device (1), when the frequency of the returned laser meets a locking condition, self-injection locking is formed, the frequency of the micro-ring external cavity (4) can be adjusted, and the frequency difference between the micro-ring external cavity (4) and the laser device (1) is in the self-injection locking range.
2. A tunable narrow linewidth semiconductor laser as claimed in claim 1 wherein: the micro-ring and the straight waveguide (3) are arranged in the micro-ring external cavity (4), and a gap is formed between the micro-ring external cavity (4) and the laser (1).
3. A tunable narrow linewidth semiconductor laser as claimed in claim 1 wherein: the laser (1) is a single mode laser, a distributed feedback laser or a distributed Bragg reflector laser.
4. A tunable narrow linewidth semiconductor laser as claimed in claim 1 wherein: the micro-ring is a silicon-based thin film lithium niobate micro-ring, a silicon micro-ring, an aluminum nitride micro-ring or a silicon nitride micro-ring.
5. A tunable narrow linewidth semiconductor laser as claimed in claim 1 wherein: the micro-ring outer cavity (4) is modulated by an electro-optical effect or modulated by a thermal effect.
6. A tunable narrow linewidth semiconductor laser as claimed in claim 1 wherein: the range of self-injection locking is determined by the following equation:
wherein f is d Is the mode spacing, alpha is the linewidth enhancement factor, I 0 The optical power injected for the original laser, I 1 For injecting the optical power of the laser, Δ ω is the original laserThe difference between the frequency of the laser light and the frequency of the injection laser light, the laser (1) being injection locked when the laser (1) is sweeping within this frequency range.
7. A tunable narrow linewidth semiconductor laser as claimed in claim 1 wherein: the micro-ring is positioned in the micro-ring resonant cavity (6), the straight waveguide (3) couples laser into the micro-ring resonant cavity (6), and the coupling mode is direct coupling or lens coupling.
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| CN118117449A (en) * | 2023-12-29 | 2024-05-31 | 渚羽科技(杭州)有限公司 | Hybrid integrated laser based on silicon-based Bragg grating |
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