CN115172507A - Position sensitive detector and preparation method thereof - Google Patents
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- 238000002360 preparation method Methods 0.000 title abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 73
- 239000004332 silver Substances 0.000 claims abstract description 73
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 72
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 68
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- 229910052751 metal Inorganic materials 0.000 claims description 11
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention is suitable for the technical field of photoelectric detection, and provides a position sensitive detector and a preparation method thereof, wherein the position sensitive detector comprises: a substrate having a front side and a back side disposed opposite to each other; a composite-structure reflective layer disposed on the front surface of the substrate; the insulating medium layer is arranged on the composite structure reflecting layer; the graphene layer is arranged on the insulating medium layer; silver microstructures, a plurality of silver microstructures disposed on the graphene layer; an output electrode disposed on the graphene layer; a ground electrode disposed on a back surface of the substrate; incident light is absorbed by the silver microstructure to respond and generate a photo-generated carrier, the photo-generated carrier is transmitted by utilizing excellent conductivity of graphene, the transit time of the carrier transmitted to an electrode is shortened, the carrier collection efficiency is improved, the purpose of increasing the output signal photocurrent is achieved, and the problem of inaccurate position detection caused by small photocurrent output by a position sensitive detector is solved.
Description
Technical Field
The invention relates to the technical field of photoelectric detection, in particular to a position sensitive detector and a preparation method thereof.
Background
Most of the position sensitive detectors are photoelectric devices based on a semiconductor PN junction transverse photoelectric effect and can be used for detecting the position of an incident light point. In the position sensitive detector, the photo-induced electron-hole pair excited by incident illumination moves directionally under the action of the junction surface potential difference and forms photocurrent output after being collected by an electrode. And calculating by using the signal photocurrent output by each electrode, and determining the position of the light spot on the photosensitive surface according to the obtained calculation result. However, the signal photocurrent output by the semiconductor junction type position sensitive detector is relatively small and the signal to noise ratio is low, so that the position detection result has large nonlinearity. In order to improve the performance, the structural form of the output electrode is mostly improved, so that a position-sensitive detector with different electrode structural forms is formed, but the improvement mode cannot fundamentally enhance the output photocurrent signal.
Disclosure of Invention
The invention provides a position sensitive detector and a preparation method thereof, which aim to solve the problem of inaccurate position detection caused by small photocurrent output by the position sensitive detector.
The invention provides a position-sensitive detector, which is used for detecting incident light and comprises:
a substrate having a front side and a back side disposed opposite;
a composite-structured reflective layer disposed on the front side of the substrate;
the insulating medium layer is arranged on the composite structure reflecting layer;
the graphene layer is arranged on the insulating medium layer;
silver microstructures, a plurality of which are disposed on the graphene layer;
an output electrode disposed on the graphene layer;
a ground electrode disposed on a back surface of the substrate,
wherein the incident light is incident to the composite structure reflection layer to form reflected light; the incident light comprises near infrared light; the silver microstructures absorb the incident light and the reflected light and generate photon-generated carriers in response; the photon-generated carriers are transversely transmitted through the graphene layer and then transmitted to the output electrode; and the output electrode receives the photon-generated carriers and outputs photocurrent signals to finish the detection of the target position.
Optionally, the composite structural reflective layer comprises a plurality of first structural layers and a plurality of second structural layers, and the first structural layers and the second structural layers are alternately stacked and arranged on the front surface of the substrate.
Optionally, the material of the first structural layer includes silicon nitride, and the material of the second structural layer includes hydrogenated amorphous silicon.
Optionally, the mathematical expression of the thickness of the first structural layer is:
wherein h1 is the thickness of the first structural layer, λ is the wavelength of near infrared light, and n1 is the refractive index of silicon nitride.
The thickness of the second structural layer is expressed mathematically as:
wherein h2 is the thickness of the second structural layer, λ is the wavelength of the near infrared light, and n2 is the refractive index of the hydrogenated amorphous silicon.
Optionally, a number of the silver microstructure arrays are disposed on the graphene layer.
Optionally, the silver microstructures comprise L-shaped silver microstructures, and the L-shaped silver microstructures are L-shaped in a plane parallel to the front surface of the substrate.
Optionally, in a plane parallel to the front surface of the substrate, the length of the L-shaped silver microstructure along a first direction is 280nm-320nm, the length of the L-shaped silver microstructure along a second direction is 330nm-370nm, the width of the L-shaped silver microstructure is 38nm-62nm, and the first direction is perpendicular to the second direction; the thickness of the L-shaped silver microstructure is 35nm-65nm along a third direction, and the third direction is perpendicular to the first direction and the second direction respectively.
Based on the same conception, the invention also provides a preparation method of the position sensitive detector, which comprises the following steps:
providing a substrate, wherein the substrate is provided with a front surface and a back surface which are oppositely arranged;
forming a composite structure reflective layer on the front surface of the substrate;
forming an insulating medium layer on the composite structure reflecting layer;
forming a graphene layer on the insulating medium layer;
forming a plurality of silver microstructures on the graphene layer;
forming an output electrode on the graphene layer;
a ground electrode is formed on the back surface of the substrate.
Optionally, the forming of the plurality of silver microstructures on the graphene layer comprises:
forming a metallic silver layer on the graphene layer;
forming an etching mask on the metal silver layer;
and etching the metal silver layer based on the etching mask to form a plurality of silver microstructures.
Optionally, the forming a composite-structured reflective layer on the front side of the substrate comprises:
and alternately laminating a first structural layer and a second structural layer on the front surface of the substrate to obtain the composite structural reflecting layer.
The invention has the beneficial effects that: the position sensitive detector in the present invention includes: a substrate having oppositely disposed front and back sides; a composite structure reflective layer disposed on the front surface of the substrate; the insulating medium layer is arranged on the composite structure reflecting layer; the graphene layer is arranged on the insulating medium layer; silver microstructures, a plurality of silver microstructures disposed on the graphene layer; an output electrode disposed on the graphene layer; a ground electrode disposed on a back surface of the substrate; incident light is absorbed by the silver microstructure to respond and generate a photo-generated carrier, the photo-generated carrier is transmitted by utilizing excellent conductivity of graphene, the transit time of the carrier transmitted to an electrode is shortened, the carrier collection efficiency is improved, the purpose of increasing the output signal photocurrent is achieved, and the problem of inaccurate position detection caused by small photocurrent output by a position sensitive detector is solved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the embodiments or the description of the prior art will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is a schematic diagram of a position sensitive detector in an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a composite structured reflective layer in an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a composite structure of a graphene layer and a silver microstructure in an embodiment of the present invention;
FIG. 4 is a graph of the absorption spectrum of a position sensitive detector for incident light in an embodiment of the present invention;
fig. 5 is a schematic flow chart of a method for manufacturing a position sensitive detector according to an embodiment of the present invention.
Description of the reference numerals:
1-a substrate; 2-a composite structured reflective layer; 21-a first structural layer; 22-a second structural layer; 3-an insulating dielectric layer; 4-a graphene layer; 5-silver microstructure; 6-an output electrode; 7-ground electrode.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Referring to fig. 1, the position sensitive detector includes: a substrate 1, the substrate 1 having a front surface and a back surface oppositely arranged; a composite-structure reflective layer 2 disposed on the front surface of the substrate 1; the insulating medium layer 3 is arranged on the composite structure reflecting layer 2; the graphene layer 4 is arranged on the insulating medium layer 3; silver microstructures 5, a plurality of silver microstructures 5 are arranged on the graphene layer 4; an output electrode 6 disposed on the graphene layer 5; a ground electrode 7 provided on the back surface of the substrate 1; incident light penetrates through the insulating medium layer 3 and is incident to the composite structure reflecting layer 3 to form reflected light; the incident light comprises near infrared light; the silver microstructures 5 absorb incident light and reflected light and generate photon-generated carriers in response; the photon-generated carriers are transversely transmitted through the graphene layer 4 and then transmitted to the output electrode 6; the output electrode 6 receives the photo-generated carriers and outputs a photo-current signal, and detection of the target position is completed through current calculation. Incident light and reflected light are absorbed by the silver microstructures 5 to respond and generate photo-generated carriers, the photo-generated carriers are transmitted by utilizing the excellent conductivity of the graphene layer 4, the transit time of the carriers transmitted to the output electrode 6 is shortened, the collection efficiency of the carriers is improved, the purpose of increasing the photocurrent of output signals is achieved, and the problem of inaccurate position detection caused by small photocurrent output by a position sensitive detector is solved. Optionally, the substrate includes, but is not limited to, silicon, germanium.
In one embodiment, the composite structural reflective layer includes a first structural layer and a second structural layer. In particular, the composite structural reflective layer may include several first structural layers and several second structural layers, which may be alternately stacked on the front surface of the substrate. The material of the first structural layer comprises silicon nitride, and the material of the second structural layer comprises hydrogenated amorphous silicon. The mathematical expression for the thickness of the first structural layer is:
wherein h1 is the thickness of the first structural layer, λ is the wavelength of near infrared light, and n1 is the refractive index of silicon nitride.
The mathematical expression of the thickness of the second structural layer is:
wherein h2 is the thickness of the second structural layer, λ is the wavelength of the near infrared light, and n2 is the refractive index of the hydrogenated amorphous silicon.
It should be understood that by reasonably setting the thickness of the first structural layer and the thickness of the second structural layer, the distributed mirror (composite structural reflection layer) formed based on the above has high reflectivity, and the function of the distributed mirror is to reflect incident light, so that the incident light can fully act with the metal silver microstructure, and the utilization rate and the quantum conversion efficiency of the incident light are improved.
In one embodiment, the material of the insulating dielectric layer includes, but is not limited to, silicon dioxide; the thickness of the insulating medium layer is 50nm-250nm, and may be 50nm, 51nm, 52nm, 53nm, 54nm, 55nm, 100nm, 150nm, 200nm, 250nm, etc. And the incident light is incident to the composite structure reflecting layer after penetrating through the insulating medium layer.
In an embodiment, in order to improve the transport capability of the graphene layers to the photo-generated carriers, the number of graphene layers may be a positive integer less than 6, for example, 1, 2, 3, 4, 5. The photo-generated carriers are transmitted through the excellent conductivity of the graphene, so that the transit time of the photo-generated carriers transmitted to the output electrode is shortened, the carrier collection efficiency is improved, and the increase of the output signal photocurrent is realized.
In one embodiment, the silver microstructures may be arranged on the graphene layer in an array, and the silver microstructures include L-shaped silver microstructures, and the L-shaped silver microstructures are L-shaped in a plane parallel to the front surface of the substrate. The length of the L-type silver microstructures along the first direction in a plane parallel to the front side of the substrate is 280nm-320nm, and may be, for example, 280nm, 281nm, 282nm, 283nm, 284nm, 285nm, 290nm, 300nm, 310nm, 320nm; the length of the L-shaped silver microstructure along the second direction is 330nm-370nm, such as 330nm, 331nm, 332nm, 333nm, 334nm, 335nm, 340nm, 350nm, 360nm, 370nm and the like; the width of the L-type silver microstructure is 38nm-62nm, for example, 38nm, 40nm, 45nm, 50nm, 60nm, 62nm and the like, and the first direction is perpendicular to the second direction; the thickness of the L-shaped silver microstructure is 35nm-65nm along a third direction, for example, 35nm, 36nm, 37nm, 38nm, 39nm, 40nm, 50nm, 55nm, 60nm, 65nm, wherein the third direction is perpendicular to the first direction and the second direction.
In one embodiment, the material of the output electrode includes, but is not limited to, gold and nickel, and the width of the output electrode may be 0.7mm-1.3mm, for example, 0.7mm, 0.8mm, 0.9mm, 1mm, 1.1mm, 1.2mm, 1.3mm, etc.; the thickness of the output electrode may be 35nm to 65nm, and may be, for example, 35nm, 36nm, 37nm, 38nm, 39nm, 40nm, 45nm, 50nm, 55nm, 60nm, or 65nm. In order to improve the collection efficiency of the photogenerated carriers, the output electrode can be arranged at the edge position of the graphene layer; specifically, a straight bar-shaped output electrode may be formed on the edge of the graphene layer.
In one embodiment, referring to fig. 2, the composite reflective layer comprises 7 first structural layers and 7 second structural layers, which may be alternately stacked on the front surface of the substrate. The first structural layer is made of silicon nitride, and the second structural layer is made of hydrogenated amorphous silicon. The refractive indices of the hydrogenated amorphous silicon and the silicon nitride were 3.47 and 1.89, respectively, and in order to detect near-infrared light having a wavelength of around 820nm, the thickness of the hydrogenated amorphous silicon was set to 59nm, and the thickness of the silicon nitride was set to 112nm.
In one embodiment, referring to fig. 3, the silver microstructures include L-shaped silver microstructures, and the L-shaped silver microstructures are L-shaped in a plane parallel to the front surface of the substrate. The silver microstructure array is arranged on the graphene layer; in each graphene lattice, the graphene has a lattice cell size of 400nm x 400nm, the length of the L-type silver microstructure along a first direction is 350nm, the length of the L-type silver microstructure along a second direction is 300nm, the width of the L-type silver microstructure is 50nm, and the first direction is perpendicular to the second direction, in a plane parallel to the front surface of the substrate; the thickness of the L-shaped silver microstructure is 40nm along a third direction, and the third direction is perpendicular to the first direction and the second direction respectively.
In a specific embodiment, in each detection unit of the position sensitive detector, the substrate is silicon; the structure of the composite structure reflecting layer is shown in FIG. 2, the thickness of hydrogenated amorphous silicon is 59nm, and the thickness of silicon nitride is 112nm; the graphene is a single layer, and the composite structure of the graphene layer and the silver microstructure is shown in fig. 3; forming an output electrode at the edge of the graphene layer, wherein the width of the output electrode is 1mm, and the thickness of the output electrode is 50nm; the position sensitive detector is used to detect the incident light, so that the incident light has an extremely excellent spectral response, and the absorption rate of the position sensitive detector to the incident light is shown in fig. 4. As can be seen from FIG. 4, the light absorption for near infrared light is significantly characteristic around 820 nm; and the position sensitive detector has short response time and strong output transverse optical flow signal, and can effectively improve the performance of the position sensitive detector.
The position sensitive detector provided by the embodiment is based on the surface plasmon polariton of metal, and when incident light is incident to the surface of the composite structure of the graphene and silver microstructures, the plasmon polariton is excited by the surface of the L-shaped metal silver to generate a photo-generated electron and hole pair. Due to the fact that work functions of materials on two sides of an interface formed by the graphene and the insulating dielectric layer are different, photo-generated holes diffuse to the graphene layer, and electrons diffuse to the insulating dielectric layer. The graphene layer accelerates the diffusion of holes on the surface of the graphene layer to two ends of the electrode, and the transit time of carriers is reduced, so that the transverse potential difference of the surface is increased, and the output photocurrent signal is increased. The problem of inaccurate position detection caused by small photocurrent output by the position sensitive detector is solved.
Based on the same concept as the position sensitive detector, the present invention further provides a method for manufacturing a position sensitive detector, please refer to fig. 5, the method for manufacturing a position sensitive detector includes:
step S110, providing a substrate;
step S120, forming a composite structure reflecting layer on the front surface of the substrate;
step S130, forming an insulating medium layer on the composite structure reflecting layer;
step S140, forming a graphene layer on the insulating medium layer;
step S150, forming a plurality of silver microstructures on the graphene layer;
step S160, forming an output electrode on the graphene layer;
step S170, a ground electrode is formed on the back surface of the substrate.
Specifically, the substrate has a front side and a back side disposed opposite to each other; forming a composite-structured reflective layer on the front side of the substrate comprises: and alternately laminating a first structural layer and a second structural layer on the front surface of the substrate to obtain the composite structural reflecting layer.
In one embodiment, an insulating medium layer may be formed on the composite structure reflective layer by evaporation or chemical vapor deposition; graphene may be laid on an insulating medium layer to form a graphene layer, and specifically, graphene may be prepared by a mechanical lift-off method or a chemical vapor deposition method.
In one embodiment, forming a number of silver microstructures on a graphene layer comprises: forming a metallic silver layer on the graphene layer; forming an etching mask on the metal silver layer; and etching the metal silver layer based on the etching mask to form a plurality of silver microstructures. The metallic silver layer can be formed on the graphene layer by evaporation or chemical vapor deposition.
In one embodiment, forming the output electrode on the graphene layer includes: and forming an output electrode at the edge position of the graphene layer by deposition. Forming a ground electrode on a back surface of a substrate includes: and forming a grounding electrode on the back surface of the substrate by means of deposition.
The embodiment provides a preparation method of a position sensitive detector, which comprises the steps of sequentially forming a composite structure reflecting layer, an insulating medium layer and a graphene layer on the front surface of a substrate, forming a plurality of silver microstructures and output electrodes on the graphene layer, and forming a grounding electrode on the back surface of the substrate, so that the prepared position sensitive detector can excite metal plasma to generate photogenerated carriers when incident light irradiates the metal silver microstructures. Due to the fact that the energy levels of materials on two sides of an interface formed by the graphene and the insulating medium layer are different, photo-generated holes diffuse to the graphene layer, and photo-generated electrons diffuse to the insulating layer. Due to the excellent conductivity of the graphene layer, the transmission of holes on an interface is accelerated, and the transit time of diffusion to an electrode is reduced, so that a larger signal photocurrent can be output. The position-sensitive detector prepared based on the embodiment has short response time and strong output transverse optical flow signal, and can effectively improve the performance of the position-sensitive detector. The design of the position sensitive detector is highly consistent with the development direction of the current photoelectric device, the structure of the position sensitive detector does not need a complex preparation process, and the position sensitive detector is compatible with the current mature semiconductor preparation technology and micron structure preparation technology.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A position sensitive detector for detecting incident light, comprising:
a substrate having oppositely disposed front and back sides;
a composite-structured reflective layer disposed on the front side of the substrate;
the insulating medium layer is arranged on the composite structure reflecting layer;
the graphene layer is arranged on the insulating medium layer;
silver microstructures, a plurality of which are disposed on the graphene layer;
an output electrode disposed on the graphene layer;
a ground electrode disposed on a back surface of the substrate;
wherein the incident light is incident to the composite structure reflective layer to form reflected light; the incident light comprises near infrared light; the silver microstructures absorb the incident light and the reflected light and generate photon-generated carriers in response; the photon-generated carriers are transversely transmitted through the graphene layer and then transmitted to the output electrode; and the output electrode receives the photon-generated carriers and outputs photocurrent signals to finish the detection of the target position.
2. The position sensitive detector of claim 1, wherein the composite structural reflective layer comprises a plurality of first structural layers and a plurality of second structural layers, the first structural layers and the second structural layers being alternately stacked on the front surface of the substrate.
3. The position sensitive detector of claim 2, wherein the material of the first structural layer comprises silicon nitride and the material of the second structural layer comprises hydrogenated amorphous silicon.
4. The position sensitive detector of claim 3, wherein the mathematical expression of the thickness of the first structural layer is:
wherein h1 is the thickness of the first structural layer, λ is the wavelength of near infrared light, and n1 is the refractive index of silicon nitride.
The thickness of the second structural layer is expressed mathematically as:
wherein h2 is the thickness of the second structural layer, λ is the wavelength of the near infrared light, and n2 is the refractive index of the hydrogenated amorphous silicon.
5. The four-quadrant detector of near-infrared light of claim 1, wherein a plurality of the silver micro-structure arrays are disposed on the graphene layer.
6. The four-quadrant detector of near-infrared light, wherein the silver microstructures comprise L-shaped silver microstructures, and the L-shaped silver microstructures are L-shaped in a plane parallel to the front surface of the substrate.
7. The four-quadrant detector of near-infrared light according to claim 6, wherein the length of the L-shaped silver microstructures along a first direction is 280nm-320nm, the length of the L-shaped silver microstructures along a second direction is 330nm-370nm, the width of the L-shaped silver microstructures is 38nm-62nm, and the first direction is perpendicular to the second direction in a plane parallel to the front surface of the substrate; the thickness of the L-shaped silver microstructure is 35nm-65nm along a third direction, and the third direction is perpendicular to the first direction and the second direction respectively.
8. A method of making a position sensitive detector, comprising:
providing a substrate, wherein the substrate is provided with a front surface and a back surface which are oppositely arranged;
forming a composite structure reflective layer on the front side of the substrate;
forming an insulating medium layer on the composite structure reflecting layer;
forming a graphene layer on the insulating medium layer;
forming a plurality of silver microstructures on the graphene layer;
forming an output electrode on the graphene layer;
a ground electrode is formed on the back side of the substrate.
9. The method of claim 8, wherein the forming of the plurality of silver microstructures on the graphene layer comprises:
forming a metallic silver layer on the graphene layer;
forming an etching mask on the metal silver layer;
and etching the metal silver layer based on the etching mask to form a plurality of silver microstructures.
10. The method of claim 8, wherein the forming a composite-structured reflective layer on the front side of the substrate comprises:
and alternately laminating a first structural layer and a second structural layer on the front surface of the substrate to obtain the composite structural reflecting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210890503.5A CN115172507A (en) | 2022-07-27 | 2022-07-27 | Position sensitive detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210890503.5A CN115172507A (en) | 2022-07-27 | 2022-07-27 | Position sensitive detector and preparation method thereof |
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