CN115172497A - Double-sided coated laminated solar cell and preparation method thereof - Google Patents
Double-sided coated laminated solar cell and preparation method thereof Download PDFInfo
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- CN115172497A CN115172497A CN202211050258.3A CN202211050258A CN115172497A CN 115172497 A CN115172497 A CN 115172497A CN 202211050258 A CN202211050258 A CN 202211050258A CN 115172497 A CN115172497 A CN 115172497A
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 123
- 239000002985 plastic film Substances 0.000 claims abstract description 103
- 229920006255 plastic film Polymers 0.000 claims abstract description 76
- 229920003023 plastic Polymers 0.000 claims abstract description 69
- 239000004033 plastic Substances 0.000 claims abstract description 69
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 51
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims abstract description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000002562 thickening agent Substances 0.000 claims abstract description 34
- 229910000029 sodium carbonate Inorganic materials 0.000 claims abstract description 22
- 235000017550 sodium carbonate Nutrition 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 17
- 239000011574 phosphorus Substances 0.000 claims abstract description 17
- 229920002635 polyurethane Polymers 0.000 claims abstract description 16
- 239000004814 polyurethane Substances 0.000 claims abstract description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 239000002994 raw material Substances 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims abstract 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 67
- 229910052710 silicon Inorganic materials 0.000 claims description 67
- 239000010703 silicon Substances 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 46
- 235000012431 wafers Nutrition 0.000 claims description 40
- 238000002844 melting Methods 0.000 claims description 37
- 230000008018 melting Effects 0.000 claims description 37
- 239000007788 liquid Substances 0.000 claims description 36
- 239000012535 impurity Substances 0.000 claims description 35
- 229920006264 polyurethane film Polymers 0.000 claims description 34
- 238000003756 stirring Methods 0.000 claims description 32
- 238000002156 mixing Methods 0.000 claims description 29
- 239000002002 slurry Substances 0.000 claims description 29
- 150000002500 ions Chemical class 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 24
- 238000005096 rolling process Methods 0.000 claims description 22
- 239000002904 solvent Substances 0.000 claims description 20
- 238000007747 plating Methods 0.000 claims description 17
- 238000001704 evaporation Methods 0.000 claims description 15
- 239000006060 molten glass Substances 0.000 claims description 15
- 238000010030 laminating Methods 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000012745 toughening agent Substances 0.000 claims description 11
- 238000003723 Smelting Methods 0.000 claims description 10
- 230000009471 action Effects 0.000 claims description 10
- 125000004429 atom Chemical group 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 10
- 238000007738 vacuum evaporation Methods 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 9
- 239000000741 silica gel Substances 0.000 claims description 9
- 229910002027 silica gel Inorganic materials 0.000 claims description 9
- 229920002725 thermoplastic elastomer Polymers 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 3
- 238000010345 tape casting Methods 0.000 claims description 3
- 238000000748 compression moulding Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 125000004437 phosphorous atom Chemical group 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 230000000052 comparative effect Effects 0.000 description 76
- 239000000463 material Substances 0.000 description 26
- 238000003490 calendering Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 18
- 238000007639 printing Methods 0.000 description 16
- 239000000155 melt Substances 0.000 description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 9
- 238000001816 cooling Methods 0.000 description 9
- 238000011049 filling Methods 0.000 description 9
- 238000001771 vacuum deposition Methods 0.000 description 9
- 239000012528 membrane Substances 0.000 description 8
- 230000006872 improvement Effects 0.000 description 7
- 238000009833 condensation Methods 0.000 description 6
- 230000005494 condensation Effects 0.000 description 6
- 238000005299 abrasion Methods 0.000 description 4
- 239000004848 polyfunctional curative Substances 0.000 description 4
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000013329 compounding Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 125000004185 ester group Chemical group 0.000 description 2
- -1 glycidyl ester Chemical class 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- FACXGONDLDSNOE-UHFFFAOYSA-N buta-1,3-diene;styrene Chemical group C=CC=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 FACXGONDLDSNOE-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
Abstract
The invention relates to the technical field of solar cells, in particular to a double-sided coated laminated tile solar cell and a preparation method thereof. The solar cell panel comprises a cell core and a light transmission layer, wherein the cell core comprises a laminated tile layer and a plastic film, and the light transmission layer comprises light transmission glass and a light transmission film; the battery plate at least comprises the following raw materials in parts by weight: 48-66 parts of monocrystalline silicon, 15-25 parts of silicon dioxide, 5-8 parts of soda ash, 6-15 parts of nitrogen, 6-15 parts of phosphorus, 12-22 parts of polyurethane, 9-15 parts of plastic, 1-4 parts of thickening agent, 1-3 parts of hardening agent and 2-9 parts of anti-reflection agent. According to the invention, the light-transmitting film is prepared by adding the hardening agent and the anti-reflection agent, and is coated on the surface of the light-transmitting glass, so that the light-transmitting glass can be protected, the surface of the light-transmitting glass is prevented from being damaged, the light inlet quantity of the battery panel is prevented from being influenced, and the photoelectric conversion efficiency of the battery panel is ensured.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a double-sided coated laminated tile solar cell and a preparation method thereof.
Background
The solar photovoltaic cell is used for directly converting solar energy into electric energy, and a ground photovoltaic system largely uses silicon solar cells with silicon as a substrate.
In order to obtain high solar energy conversion efficiency, the solar cell is generally arranged in a place such as a building roof and the like which can receive illumination for a long time, the environment is severe, the high-altitude air flow rate is high, when air is wrapped with dust and blown across the surface of the solar cell, the surface of the solar cell is scratched, the light transmittance of the surface of the solar cell is influenced, and partial light is lost due to diffuse reflection when passing through scratches on the surface of the solar cell, so that the light inlet quantity of the solar cell is reduced, and the conversion efficiency of the solar cell is further influenced.
Disclosure of Invention
The invention aims to provide a double-sided coated laminated solar cell and a preparation method thereof, so as to solve the problems in the background technology.
In order to achieve the above object, in one aspect, the present invention provides a double-sided coated laminated solar cell, including a cell panel, where the cell panel includes a cell core and a light-transmitting layer attached to upper and lower surfaces of the cell core, the cell core includes a laminated layer and plastic films disposed on upper and lower surfaces of the laminated layer, the light-transmitting layer includes a light-transmitting glass bonded to the plastic films, and a surface of one side of the light-transmitting glass, which is far away from the cell core, is provided with a light-transmitting film;
the battery plate at least comprises the following raw materials in parts by weight: 48-66 parts of monocrystalline silicon, 15-25 parts of silicon dioxide, 5-8 parts of soda ash, 6-15 parts of nitrogen, 6-15 parts of phosphorus, 12-22 parts of polyurethane, 9-15 parts of plastic, 1-4 parts of thickening agent, 1-3 parts of hardening agent and 2-9 parts of anti-reflection agent.
As a further improvement of the technical scheme, the hardening agent is a PET toughening agent.
As a further improvement of the technical scheme, the antireflection agent is an SBS thermoplastic elastomer, and the thickening agent is an alkali-soluble thickening agent containing an acid group.
In another aspect, the present invention provides a method for preparing a double-sided coated laminated solar cell as described above, comprising the following steps:
s1, putting monocrystalline silicon into a smelting furnace to be melted to form sheet silicon, injecting nitrogen and phosphorus impurities into the sheet silicon in an ion injection mode to form PN junctions, cutting the sheet silicon into square silicon wafers, stacking and arranging a plurality of silicon wafers into a string, and then laminating to form a tile layer;
s2, stirring and mixing the plastic and the thickening agent, putting the mixture into an extruder to be melted into a plastic mixture, extruding the plastic mixture to perform tape casting to form plastic sheets, performing edge cutting treatment on the plastic sheets to form plastic films, and attaching the plastic films to the upper surface and the lower surface of the laminated tile layer;
s3, adding silicon dioxide and soda ash for melting, adding a hardening agent to form molten glass, performing plasticity on the glass through a rolling method, and performing compression molding on the cooled glass to obtain transparent glass;
s4, mixing and melting polyurethane and an anti-reflection agent, rolling to form a polyurethane film, carrying out vacuum evaporation on the polyurethane film, and plating a layer of light-transmitting film on the surface of the light-transmitting glass;
and S5, attaching the surface of one side, which is not plated with the light-transmitting film, of the light-transmitting glass to the plastic film to form a battery panel, pumping out air in the battery panel, heating to melt the plastic film to fill a gap in the battery panel, and bonding the laminated tile layer with the light-transmitting layer.
As a further improvement of the technical scheme, in S1, the ion implantation method is to convert impurity atoms, i.e., nitrogen and phosphorus atoms, into ionized impurity ions, and then eject the impurity ions to the silicon wafer under the action of an electric field and enter the silicon wafer to form a PN junction.
As a further improvement of the technical scheme, in S2, the specific method of casting the sheet is to mix the plastic powder and the thickening agent in the solvent to form uniform and stable suspended slurry, the slurry flows onto the scraper and is hung by a scraper to form a plastic blank, and the plastic blank is dried to remove the solvent in the plastic blank to form the plastic sheet.
As a further improvement of the technical scheme, in the S2, the thickness of the plastic sheet is 0.35-0.65MM.
In the step S3, the melting temperature of the molten glass is 800-1300 ℃, and the molten glass is stirred during melting, wherein the stirring speed of the molten glass is 7-10rpm/min, and in the process of rolling, the molten glass passes through the rolling rollers of the rolling machine to form a glass plate with a width matching with the tile-stacked layer, and the glass plate is cooled to form the light-transmitting glass.
As a further improvement of the technical solution, in S4, the method for plating the polyurethane film on the surface of the transparent glass includes placing the polyurethane film in a vacuum coating chamber, heating and evaporating the polyurethane film by an evaporation source, and allowing evaporated particles to escape from the surface of the evaporation source and fly to the surface of the transparent glass to condense and form the transparent film.
As a further improvement of the technical scheme, in S5, after the plastic film fills the gaps in the cell panel, the plastic film is coated on the periphery of the cell panel.
According to the invention, the PET toughening agent is added, so that the silicon dioxide and the sodium carbonate have good dispersibility and identity, the viscosity and toughness of a molten object are changed, the strength of the transparent glass is improved, in addition, the anti-reflection agent is added, the silicon dioxide and the sodium carbonate can be crosslinked under the oxidation condition of high-temperature air, so that the hardness of the transparent film is increased, in addition, the acrylate in the PET toughening agent is matched with the anti-reflection agent, namely the thermoplastic elastomer to form the acrylate thermoplastic elastomer, the acrylate is a flexible chain segment, the main chain of the acrylate is saturated, and the side group is a polar ester group, so that the elasticity and the interface compatibility of glass fibers can be enhanced, the tensile strength of the transparent film is improved, the transparent glass is protected, the surface damage of the transparent glass is avoided, and the light inlet quantity of the solar cell is prevented from being influenced.
Compared with the prior art, the invention has the beneficial effects that:
according to the double-sided coated laminated solar cell and the preparation method thereof, the strength of the transparent glass is increased by adding the toughening agent, the transparent film is prepared by adding the anti-reflection agent, the transparent film is coated on the surface of the transparent glass, the transparent glass can be protected, the surface of the transparent glass is prevented from being damaged, the light inlet quantity of a cell panel is prevented from being influenced, and the photoelectric conversion efficiency of the cell panel is ensured.
Drawings
FIG. 1 is an overall flow chart of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the equipment or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The embodiment aims to provide a double-sided coated laminated tile solar cell, which comprises a cell panel, wherein the cell panel comprises a cell core and light transmitting layers attached to the upper surface and the lower surface of the cell core, the cell core comprises a laminated tile layer and plastic films arranged on the upper surface and the lower surface of the laminated tile layer, the light transmitting layers comprise light transmitting glass attached to the plastic films, and the surface of one side, away from the cell core, of the light transmitting glass is provided with a light transmitting film; the transparent glass is used for protecting a power generation main body, namely a battery core, the transparent film is used for preventing the surface of the transparent glass from being scratched and ensuring the light inlet quantity of the solar battery, the plastic film is used for bonding and fixing the transparent glass and the lamination, and the laminated tile layer is used for power generation;
the battery plate at least comprises the following raw materials in parts by weight: 48-66 parts of monocrystalline silicon, 15-25 parts of silicon dioxide, 5-8 parts of soda ash, 6-15 parts of nitrogen, 6-15 parts of phosphorus, 12-22 parts of polyurethane, 9-15 parts of plastic, 1-4 parts of thickening agent, 1-3 parts of hardening agent and 2-9 parts of anti-reflection agent.
On the basis, in the embodiment of the invention, the hardening agent is the PET toughening agent, the PET toughening agent is the ethylene elastomer with acrylate and glycidyl ester dual functionalization, the PET toughening agent has good dispersity and compatibility, the melt viscosity and the toughness are improved, the PET toughening agent is used for reinforcing the interface compatibility of glass fiber and mineral filling, and the tensile strength, the bending strength, the impact strength and the thermal deformation temperature of the modified material can be improved.
Furthermore, the anti-reflection agent is an SBS thermoplastic elastomer, the thickening agent is an alkali-soluble thickening agent containing an acid group, the SBS styrene thermoplastic elastomer is a styrene-butadiene styrene three-section copolymer, and a butadiene block can be crosslinked under the oxidation condition of high-temperature air, so that the hardness and viscosity of the light-transmitting glass and the light-transmitting film are increased.
According to the invention, the PET toughening agent is added, so that the silicon dioxide and the sodium carbonate have good dispersibility and identity, the viscosity and toughness of a molten object are changed, the strength of the transparent glass is improved, in addition, the anti-reflection agent is added, the silicon dioxide and the sodium carbonate can be crosslinked under the oxidation condition of high-temperature air, so that the hardness of the transparent film is increased, in addition, the acrylate in the PET toughening agent is matched with the anti-reflection agent, namely the thermoplastic elastomer to form the acrylate thermoplastic elastomer, the acrylate is a flexible chain segment, the main chain of the acrylate is saturated, and the side group is a polar ester group, so that the elasticity and the interface compatibility of glass fibers can be enhanced, the tensile strength of the transparent film is improved, the transparent glass is protected, the surface damage of the transparent glass is avoided, and the light inlet quantity of the solar cell is prevented from being influenced.
Referring to fig. 1, an embodiment of the present invention further provides a method for manufacturing a double-sided coated laminated solar cell, which includes the following steps:
1. after monocrystalline silicon is put into a smelting furnace to be melted to form sheet-shaped silicon, nitrogen and phosphorus impurity atoms are changed into ionized impurity ions, the impurity ions are emitted to a silicon wafer under the action of an electric field and enter the silicon wafer to form PN junctions, the sheet-shaped silicon is cut into square silicon wafers, and a plurality of silicon wafers are stacked and arranged into a string to be laminated to form a tile layer;
2. stirring and mixing plastic and a thickening agent, then putting the mixture into an extruder to be melted into a plastic mixture, mixing plastic powder and the thickening agent in a solvent to form uniform and stable suspended slurry, allowing the slurry to flow onto a scraper blade, hanging and smearing the slurry by using a scraper to form a plastic blank, drying the plastic blank to remove the solvent in the plastic blank to form a plastic sheet with the thickness of 0.35-0.65MM, so that when the plastic film is melted to fill a gap in a battery panel in the later period, a plastic film with a certain thickness is still arranged between a tile stacking layer and a light-transmitting layer, so that the tile stacking layer and the light-transmitting layer can be bonded conveniently, forming the plastic film after performing edge cutting treatment on the plastic sheet, and attaching the plastic film to the upper surface and the lower surface of the tile stacking layer;
3. adding silicon dioxide and soda ash for melting, adding a hardening agent, forming molten glass liquid at 800-1300 ℃, stirring during melting, wherein the stirring speed of the glass liquid is 7-10rpm/min, in the calendering process, passing the glass liquid through a calendering roller of a calender to form a glass plate with the plate width matched with the tile-folding layer, cooling the glass plate to form light-transmitting glass, and performing plasticity on the glass liquid by a calendering method, in the calendering process, passing the glass liquid through the calendering roller of the calender to form the glass plate with the plate width matched with the tile-folding layer, and cooling the glass plate to obtain the light-transmitting glass;
4. mixing and melting polyurethane and an anti-reflection agent, rolling to form a polyurethane film material, placing the polyurethane film material in a vacuum coating chamber, carrying out vacuum evaporation on the polyurethane film material, enabling evaporated particles to escape from the surface of an evaporation source, flying to the surface of light-transmitting glass, condensing, and coating a layer of light-transmitting film on the surface of the light-transmitting glass;
5. the non-plating printing opacity membrane of printing opacity glass one side surface forms the panel with the laminating of plastic film, takes out the air in the panel, and the heating melts the plastic film and fills the space in the panel to will fold tile layer and euphotic layer and bond, and behind the space in the plastic film filling panel, adopt silica gel to coat in the periphery of panel, realize sealedly in the panel.
The double-sided coated tiled solar cell provided by the invention is further illustrated by the following specific examples according to the dosage of different raw materials in the cell panel.
Example 1
1. After 48 parts of monocrystalline silicon are put into a smelting furnace to be melted to form sheet-shaped silicon, impurity atoms of 6 parts of nitrogen and 6 parts of phosphorus are changed into ionized impurity ions, the impurity ions flow to silicon wafers under the action of an electric field and enter the silicon wafers to form PN junctions, the sheet-shaped silicon is cut into square silicon wafers, and a plurality of silicon wafers are stacked and arranged into a string and then laminated to form a laminated layer;
2. stirring and mixing 9 parts of plastic and 1 part of thickening agent, putting the mixture into an extruder to be melted into a plastic mixture, mixing plastic powder and the thickening agent in a solvent to form uniform and stable suspended slurry, allowing the slurry to flow onto a scraper and hanging and smearing the slurry by a scraper to form a plastic blank, drying the plastic blank to remove the solvent in the plastic blank to form a plastic sheet with the thickness of 0.35MM, so that when the plastic film is melted and fills a gap in a battery panel at the later stage, a plastic film with a certain thickness is still arranged between a tile stacking layer and a light transmitting layer, so that the tile stacking layer and the light transmitting layer are bonded, performing edge cutting treatment on the plastic sheet to form the plastic film, and attaching the plastic film to the upper surface and the lower surface of the tile stacking layer;
3. adding 15 parts of silicon dioxide and 5 parts of soda ash for melting, adding 1 part of a hardening agent, forming molten glass liquid at 800 ℃, stirring during melting, wherein the stirring speed of the glass liquid is 7rpm/min, performing plasticity on the glass liquid by a calendering method, forming a glass plate with the plate width matched with the laminated tile layer after the glass liquid passes through a calendering roller of a calender during the calendering process, and cooling the glass plate to obtain light-transmitting glass;
4. mixing and melting 12 parts of polyurethane and 2 parts of an anti-reflection agent, rolling to form a polyurethane film material, placing the polyurethane film material in a vacuum coating chamber, carrying out vacuum evaporation on the polyurethane film material, enabling evaporated particles to escape from the surface of an evaporation source, flying to the surface of light-transmitting glass for condensation, and plating a layer of light-transmitting film on the surface of the light-transmitting glass;
5. the non-plating printing opacity membrane of printing opacity glass one side surface and plastic film laminating form the panel, take out the air in the panel, the heating melts the plastic film and fills the interior space of panel to will fold the tile layer and bond with the euphotic layer, and after the space in the plastic film filling panel, adopt silica gel to coat in the periphery of panel, realize sealedly in the panel.
Example 2
1. 52 parts of monocrystalline silicon are put into a smelting furnace to be melted to form sheet silicon, impurity atoms of 8 parts of nitrogen and 8 parts of phosphorus are changed into ionized impurity ions, the impurity ions flow to the silicon wafers under the action of an electric field and enter the silicon wafers to form PN junctions, the sheet silicon is cut into square silicon wafers, and a plurality of silicon wafers are stacked and arranged into a string and then laminated to form a laminated layer;
2. stirring and mixing 11 parts of plastic and 2 parts of thickening agent, then putting the mixture into an extruder to be melted into a plastic mixture, mixing plastic powder and the thickening agent in a solvent to form uniform and stable suspended slurry, allowing the slurry to flow onto a scraper and hanging and smearing the slurry by using a scraper to form a plastic blank, drying the plastic blank to remove the solvent in the plastic blank to form a plastic sheet with the thickness of 0.45MM, so that when the plastic film melts and fills a gap in a battery panel in the later period, a plastic film with a certain thickness still exists between a tile stacking layer and a light-transmitting layer, bonding the tile stacking layer and the light-transmitting layer is facilitated, forming the plastic film after performing edge cutting treatment on the plastic sheet, and attaching the plastic film to the upper surface and the lower surface of the tile stacking layer;
3. adding 18 parts of silicon dioxide and 6 parts of soda ash for melting, adding 2 parts of a hardening agent, forming molten glass liquid at 950 ℃, stirring during melting, wherein the stirring speed of the glass liquid is 8rpm/min, performing plasticity on the glass liquid by a calendering method, forming a glass plate with the plate width matched with the tile stack layer after the glass liquid passes through a calendering roller of a calender during calendering, and cooling the glass plate to obtain light-transmitting glass;
4. mixing and melting 15 parts of polyurethane and 4 parts of an anti-reflection agent, rolling to form a polyurethane film material, placing the polyurethane film material in a vacuum coating chamber, carrying out vacuum evaporation on the polyurethane film material, enabling evaporated particles to escape from the surface of an evaporation source, flying to the surface of light-transmitting glass, condensing, and plating a layer of light-transmitting film on the surface of the light-transmitting glass;
5. the non-plating printing opacity membrane of printing opacity glass one side surface forms the panel with the laminating of plastic film, takes out the air in the panel, and the heating melts the plastic film and fills the space in the panel to will fold tile layer and euphotic layer and bond, and behind the space in the plastic film filling panel, adopt silica gel to coat in the periphery of panel, realize sealedly in the panel.
Example 3
1. Putting 58 parts of monocrystalline silicon into a smelting furnace, melting to form sheet silicon, converting impurity atoms of 10 parts of nitrogen and 10 parts of phosphorus into ionized impurity ions, irradiating the impurity ions to a silicon wafer under the action of an electric field, allowing the impurity ions to enter the silicon wafer to form PN junctions, cutting the sheet silicon into square silicon wafers, stacking and arranging a plurality of silicon wafers into a string, and laminating to form a tiled layer;
2. stirring and mixing 12 parts of plastic and 3 parts of thickening agent, then putting the mixture into an extruder to be melted into a plastic mixture, mixing plastic powder and the thickening agent in a solvent to form uniform and stable suspended slurry, enabling the slurry to flow onto a scraper and hanging and smearing the slurry by a scraper to form a plastic blank, drying the plastic blank to remove the solvent in the plastic blank to form a plastic sheet with the thickness of 0.55MM, so that a plastic film with a certain thickness is still arranged between a tile stack layer and a light transmitting layer when the plastic film is melted to fill a gap in a battery panel at the later stage, bonding the tile stack layer and the light transmitting layer is facilitated, forming the plastic film after trimming the plastic sheet, and attaching the plastic film to the upper surface and the lower surface of the tile stack layer;
3. adding 21 parts of silicon dioxide and 7 parts of soda ash for melting, adding 3 parts of a hardening agent, forming molten glass liquid at 1100 ℃, stirring during melting, wherein the stirring speed of the glass liquid is 9rpm/min, performing plasticity on the glass liquid by a calendering method, forming a glass plate with the plate width matched with the laminated tile layer after the glass liquid passes through a calendering roller of a calender during the calendering process, and cooling the glass plate to obtain light-transmitting glass;
4. mixing and melting 18 parts of polyurethane and 6 parts of anti-reflection agent, rolling to form a polyurethane film material, placing the polyurethane film material in a vacuum coating chamber, carrying out vacuum evaporation on the polyurethane film material, enabling evaporated particles to escape from the surface of an evaporation source, flying to the surface of light-transmitting glass for condensation, and plating a layer of light-transmitting film on the surface of the light-transmitting glass;
5. the non-plating printing opacity membrane of printing opacity glass one side surface forms the panel with the laminating of plastic film, takes out the air in the panel, and the heating melts the plastic film and fills the space in the panel to will fold tile layer and euphotic layer and bond, and behind the space in the plastic film filling panel, adopt silica gel to coat in the periphery of panel, realize sealedly in the panel.
Example 4
1. Putting 61 parts of monocrystalline silicon into a smelting furnace, melting to form sheet silicon, then changing impurity atoms of 13 parts of nitrogen and 13 parts of phosphorus into ionized impurity ions, then ejecting the impurity ions to silicon wafers under the action of an electric field, and allowing the impurity ions to enter the silicon wafers to form PN junctions, cutting the sheet silicon into square silicon wafers, stacking and arranging a plurality of silicon wafers into a string, and laminating to form a tiled layer;
2. stirring and mixing 13 parts of plastic and 4 parts of thickening agent, then putting the mixture into an extruder to be melted into a plastic mixture, mixing plastic powder and the thickening agent in a solvent to form uniform and stable suspended slurry, enabling the slurry to flow onto a scraper and hanging and smearing the slurry by a scraper to form a plastic blank, drying the plastic blank to remove the solvent in the plastic blank to form a plastic sheet with the thickness of 0.60MM, so that a plastic film with a certain thickness is still arranged between a tile stack layer and a light transmitting layer when the plastic film is melted to fill a gap in a battery panel at the later stage, bonding the tile stack layer and the light transmitting layer is facilitated, forming the plastic film after trimming the plastic sheet, and attaching the plastic film to the upper surface and the lower surface of the tile stack layer;
3. adding 22 parts of silicon dioxide and 8 parts of soda ash for melting, adding 3 parts of a hardening agent, forming molten glass liquid at 1200 ℃, stirring during melting, wherein the stirring speed of the glass liquid is 10rpm/min, performing plasticity on the glass liquid by a calendering method, forming a glass plate with the plate width matched with the tile stack layer after the glass liquid passes through a calendering roller of a calender during calendering, and cooling the glass plate to obtain light-transmitting glass;
4. mixing and melting 20 parts of polyurethane and 8 parts of anti-reflection agent, rolling to form a polyurethane film material, placing the polyurethane film material in a vacuum coating chamber, carrying out vacuum evaporation on the polyurethane film material, enabling evaporated particles to escape from the surface of an evaporation source, flying to the surface of light-transmitting glass for condensation, and plating a layer of light-transmitting film on the surface of the light-transmitting glass;
5. the non-plating printing opacity membrane of printing opacity glass one side surface and plastic film laminating form the panel, take out the air in the panel, the heating melts the plastic film and fills the interior space of panel to will fold the tile layer and bond with the euphotic layer, and after the space in the plastic film filling panel, adopt silica gel to coat in the periphery of panel, realize sealedly in the panel.
Example 5
1. Putting 66 parts of monocrystalline silicon into a smelting furnace, melting to form sheet silicon, then changing impurity atoms of 15 parts of nitrogen and 15 parts of phosphorus into ionized impurity ions, then ejecting the impurity ions to silicon wafers under the action of an electric field, and allowing the impurity ions to enter the silicon wafers to form PN junctions, cutting the sheet silicon into square silicon wafers, stacking and arranging a plurality of silicon wafers into a string, and laminating to form a tiled layer;
2. stirring and mixing 15 parts of plastic and 4 parts of thickening agent, then putting the mixture into an extruder to be melted into a plastic mixture, mixing plastic powder and the thickening agent in a solvent to form uniform and stable suspended slurry, enabling the slurry to flow onto a scraper and hanging and smearing the slurry by a scraper to form a plastic blank, drying the plastic blank to remove the solvent in the plastic blank to form a plastic sheet with the thickness of 0.65MM, so that a plastic film with a certain thickness is still arranged between a tile stack layer and a light transmitting layer when the plastic film is melted to fill a gap in a battery panel at the later stage, bonding the tile stack layer and the light transmitting layer is facilitated, forming the plastic film after trimming the plastic sheet, and attaching the plastic film to the upper surface and the lower surface of the tile stack layer;
3. adding 25 parts of silicon dioxide and 8 parts of soda ash for melting, adding 3 parts of a hardening agent, forming molten glass liquid at 1300 ℃, stirring during melting, wherein the stirring speed of the glass liquid is 10rpm/min, performing plasticity on the glass liquid by a calendering method, forming a glass plate with the plate width matched with the tile stack layer after the glass liquid passes through a calendering roller of a calender during the calendering process, and cooling the glass plate to obtain light-transmitting glass;
4. mixing and melting 22 parts of polyurethane and 9 parts of an anti-reflection agent, rolling to form a polyurethane film material, placing the polyurethane film material in a vacuum coating chamber, carrying out vacuum evaporation on the polyurethane film material, enabling evaporated particles to escape from the surface of an evaporation source, flying to the surface of light-transmitting glass for condensation, and coating a layer of light-transmitting film on the surface of the light-transmitting glass;
5. the non-plating printing opacity membrane of printing opacity glass one side surface forms the panel with the laminating of plastic film, takes out the air in the panel, and the heating melts the plastic film and fills the space in the panel to will fold tile layer and euphotic layer and bond, and behind the space in the plastic film filling panel, adopt silica gel to coat in the periphery of panel, realize sealedly in the panel.
The raw material formulation in examples 1-5 is shown in table 1:
TABLE 1
| Example 1 | Example 2 | Example 3 | Example 4 | Example 5 | |
| Silicon single crystal per part | 48 | 52 | 58 | 61 | 66 |
| Silicon dioxide per part | 15 | 18 | 21 | 22 | 25 |
| Soda ash/ |
5 | 6 | 7 | 8 | 8 |
| Nitrogen per part | 6 | 8 | 10 | 13 | 15 |
| Phosphorus per part | 6 | 8 | 10 | 13 | 15 |
| Polyurethane per part | 12 | 15 | 18 | 20 | 22 |
| Plastics/portion | 9 | 11 | 12 | 13 | 15 |
| Thickener per |
1 | 2 | 3 | 4 | 4 |
| Hardener part by |
1 | 2 | 3 | 3 | 3 |
| Anti-reflection agent/ |
2 | 4 | 6 | 8 | 9 |
The preparation process parameters in examples 1 to 5 are shown in Table 2:
TABLE 2
| Example 1 | Example 2 | Example 3 | Example 4 | Example 5 | |
| Thickness of plastic sheet/MM | 0.35 | 0.45 | 0.55 | 0.60 | 0.65 |
| Melting temperature/. Degree.C | 800 | 950 | 1100 | 1200 | 1300 |
| Stirring speed/(rpm/min) | 7 | 8 | 9 | 10 | 10 |
Comparative example 1
The comparative example adopts the process of example 1, only lacks an anti-reflection agent, and the rest is unchanged, and the specific steps are as follows:
1. after 48 parts of monocrystalline silicon are put into a smelting furnace to be melted to form sheet-shaped silicon, impurity atoms of 6 parts of nitrogen and 6 parts of phosphorus are changed into ionized impurity ions, the impurity ions flow to silicon wafers under the action of an electric field and enter the silicon wafers to form PN junctions, the sheet-shaped silicon is cut into square silicon wafers, and a plurality of silicon wafers are stacked and arranged into a string and then laminated to form a laminated layer;
2. stirring and mixing 9 parts of plastic and 1 part of thickening agent, putting the mixture into an extruder to be melted into a plastic mixture, mixing plastic powder and the thickening agent in a solvent to form uniform and stable suspended slurry, allowing the slurry to flow onto a scraper and hanging and smearing the slurry by using a scraper to form a plastic blank, drying the plastic blank to remove the solvent in the plastic blank to form a plastic sheet with the thickness of 0.35MM, so that when the plastic film is melted to fill a gap in a battery panel in the later period, a plastic film with a certain thickness is still arranged between a tile stacking layer and a light-transmitting layer, so that the tile stacking layer and the light-transmitting layer can be bonded together, performing edge cutting treatment on the plastic sheet to form a plastic film, and attaching the plastic film to the upper surface and the lower surface of the tile stacking layer;
3. adding 15 parts of silicon dioxide and 5 parts of soda ash for melting, adding 1 part of a hardening agent, forming molten glass liquid at 800 ℃, stirring during melting, wherein the stirring speed of the glass liquid is 7rpm/min, performing plasticity on the glass liquid by a calendering method, forming a glass plate with the plate width matched with the laminated tile layer after the glass liquid passes through a calendering roller of a calender during the calendering process, and cooling the glass plate to obtain light-transmitting glass;
4. mixing and melting 12 parts of polyurethane, rolling to form a polyurethane film material, placing the polyurethane film material in a vacuum coating chamber, carrying out vacuum evaporation on the polyurethane film material, enabling evaporated particles to escape from the surface of an evaporation source, flying to the surface of light-transmitting glass for condensation, and coating a layer of light-transmitting film on the surface of the light-transmitting glass;
5. the non-plating printing opacity membrane of printing opacity glass one side surface and plastic film laminating form the panel, take out the air in the panel, the heating melts the plastic film and fills the interior space of panel to will fold the tile layer and bond with the euphotic layer, and after the space in the plastic film filling panel, adopt silica gel to coat in the periphery of panel, realize sealedly in the panel.
Comparative example 2
The process of example 2 is adopted in the comparative example, only the anti-reflection agent is lacked, the rest is unchanged, the specific steps are similar to those of comparative example 1, and the details of the comparative example are not repeated.
Comparative example 3
The process of example 3 is adopted in the comparative example, only the antireflection agent is lacked, the rest is unchanged, the specific steps are similar to those of comparative example 1, and the comparative example is not repeated.
Comparative example 4
The process of example 4 is adopted in the comparative example, only the antireflection agent is lacked, the rest is unchanged, the specific steps are similar to those of comparative example 1, and the comparative example is not repeated.
Comparative example 5
The process of example 5 is adopted in the comparative example, only the antireflection agent is lacked, the rest is unchanged, the specific steps are similar to those of comparative example 1, and the comparative example is not repeated.
TABLE 3 compounding ratios of the raw materials in the above comparative examples 1 to 5
| Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | Comparative example 5 | |
| Silicon single crystal per part | 48 | 52 | 58 | 61 | 66 |
| Silicon dioxide per part | 15 | 18 | 21 | 22 | 25 |
| Soda ash/ |
5 | 6 | 7 | 8 | 8 |
| Nitrogen per part | 6 | 8 | 10 | 13 | 15 |
| Phosphorus per part | 6 | 8 | 10 | 13 | 15 |
| Polyurethane per part | 12 | 15 | 18 | 20 | 22 |
| Plastics per part | 9 | 11 | 12 | 13 | 15 |
| Thickener per |
1 | 2 | 3 | 4 | 4 |
| Hardener per |
1 | 2 | 3 | 3 | 3 |
| Anti-reflection agent/part | / | / | / | / | / |
Comparative example 6
The comparative example, using the process of example 1, only lacks a hardener and the remainder is unchanged, the specific steps are as follows:
1. after 48 parts of monocrystalline silicon are put into a smelting furnace to be melted to form sheet silicon, impurity atoms of 6 parts of nitrogen and 6 parts of phosphorus are changed into ionized impurity ions, the impurity ions are ejected to silicon wafers under the action of an electric field and enter the silicon wafers to form PN junctions, the sheet silicon is cut into square silicon wafers, and a plurality of silicon wafers are stacked and arranged in series and then laminated to form a tiled layer;
2. stirring and mixing 9 parts of plastic and 1 part of thickening agent, putting the mixture into an extruder to be melted into a plastic mixture, mixing plastic powder and the thickening agent in a solvent to form uniform and stable suspended slurry, allowing the slurry to flow onto a scraper and hanging and smearing the slurry by a scraper to form a plastic blank, drying the plastic blank to remove the solvent in the plastic blank to form a plastic sheet with the thickness of 0.35MM, so that when the plastic film is melted and fills a gap in a battery panel at the later stage, a plastic film with a certain thickness is still arranged between a tile stacking layer and a light transmitting layer, so that the tile stacking layer and the light transmitting layer are bonded, performing edge cutting treatment on the plastic sheet to form the plastic film, and attaching the plastic film to the upper surface and the lower surface of the tile stacking layer;
3. adding 15 parts of silicon dioxide and 5 parts of soda ash for melting, forming molten glass liquid at 800 ℃, stirring during melting, wherein the stirring speed of the glass liquid is 7rpm/min, performing plasticity on the glass liquid by a rolling method, forming a glass plate with the plate width matched with the tile stack layer after the glass liquid passes through a rolling roller of a rolling machine during rolling, and cooling the glass plate to obtain transparent glass;
4. mixing and melting 12 parts of polyurethane and 2 parts of an anti-reflection agent, rolling to form a polyurethane film material, placing the polyurethane film material in a vacuum coating chamber, carrying out vacuum evaporation on the polyurethane film material, enabling evaporated particles to escape from the surface of an evaporation source, flying to the surface of light-transmitting glass for condensation, and plating a layer of light-transmitting film on the surface of the light-transmitting glass;
5. the non-plating printing opacity membrane of printing opacity glass one side surface and plastic film laminating form the panel, take out the air in the panel, the heating melts the plastic film and fills the interior space of panel to will fold the tile layer and bond with the euphotic layer, and after the space in the plastic film filling panel, adopt silica gel to coat in the periphery of panel, realize sealedly in the panel.
Comparative example 7
The process of example 2 is adopted in the comparative example, only the hardening agent is lacked, the rest is unchanged, the specific steps are similar to those of comparative example 6, and the comparative example is not repeated.
Comparative example 8.
The process of example 3 is adopted in the comparative example, only the hardening agent is lacked, the rest is unchanged, the specific steps are similar to those of comparative example 6, and the comparative example is not repeated.
Comparative example 9.
The process of example 4 is adopted in the comparative example, only the hardening agent is lacked, the rest is unchanged, the specific steps are similar to those of comparative example 6, and the comparative example is not repeated.
Comparative example 10.
The process of example 5 is adopted in the comparative example, only the hardening agent is lacked, the rest is unchanged, the specific steps are similar to those of comparative example 6, and the comparative example is not repeated.
TABLE 4 compounding ratios of the above-mentioned materials in comparative examples 6 to 10
| Comparative example 6 | Comparative example 7 | Comparative example 8 | Comparative example 9 | Comparative example 10 | |
| Silicon single crystal per part | 48 | 52 | 58 | 61 | 66 |
| Silicon dioxide per part | 15 | 18 | 21 | 22 | 25 |
| Soda ash/ |
5 | 6 | 7 | 8 | 8 |
| Nitrogen per part | 6 | 8 | 10 | 13 | 15 |
| Phosphorus per part | 6 | 8 | 10 | 13 | 15 |
| Polyurethane-Portions are prepared | 12 | 15 | 18 | 20 | 22 |
| Plastics per part | 9 | 11 | 12 | 13 | 15 |
| Thickener per |
1 | 2 | 3 | 4 | 4 |
| Hardener part by part | / | / | / | / | / |
| Anti-reflection agent/ |
2 | 4 | 6 | 8 | 9 |
Comparative example 11
This comparative example used the procedure of example 3, lacking only the thickener and the rest unchanged.
Comparative example 12
This comparative example used the procedure of example 4, lacking only soda ash, and the remainder unchanged.
Comparative example 13
This comparative example was similar to example 1 except that the melting temperature of the molten glass was 1000 c, as compared to comparative example 1.
Comparative example 14
This comparative example was compared with comparative example 2, and the thickness of the plastic sheet was set to 0.65MM, and the rest was similar to example 2.
Comparative example 15
This comparative example was compared with comparative example 3, and the thickness of the plastic sheet was set to 0.45MM, and the remainder was similar to example 3.
Comparative example 16
This comparative example was compared with comparative example 4, the stirring speed was changed to 8rpm/min, and the rest was similar to example 4.
Comparative example 17
This comparative example was compared with comparative example 4, the stirring speed was changed to 7rpm/min, and the rest was similar to example 4.
TABLE 5 compounding ratios of raw materials in the above comparative examples 11 to 17
TABLE 6 comparison of preparation Process parameters in comparative examples 1 to 17 above
Experimental example 1
The solar cells prepared in examples 1 to 5 and the solar cells prepared in comparative examples 1 to 17 were subjected to a photoelectric conversion test, before the test, the solar cells prepared in examples 1 to 5 and the solar cells prepared in comparative examples 1 to 17 were placed in a place capable of receiving light for a long time, i.e., a rooftop of a high-rise building, and subjected to a test for one month, the solar cells prepared in examples 1 to 5 and comparative examples 1 to 17 were respectively subjected to a photoelectric conversion efficiency test, the photoelectric conversion efficiency being a ratio of a maximum output electric power of the solar cell to a sunlight power irradiated on the solar cell, and an abrasion ratio of the solar cell, i.e., a percentage of an area where abrasion occurs on the surface of the solar cell to a total area of the surface of the solar cell, an average value of the photoelectric conversion efficiency and an average value of the abrasion ratio, were calculated, and data were tabulated, as shown in table 7:
TABLE 7 comparison of photoelectric conversion efficiency and abrasion ratio of examples and comparative examples
As shown in table 7, the solar cells prepared in examples 1 to 5 all had greater photoelectric conversion efficiencies than the solar cells prepared in comparative examples 1 to 17, the solar cells of examples had smaller surface wear ratios than the solar cells of comparative examples 1 to 17, the solar cells of examples 1 to 5 all had higher photoelectric conversion efficiencies than 15% and smaller wear ratios than 0.23%, and when the compositions were decreased differently and the process conditions were changed in comparative examples 1 to 17, the solar cells all had different decreases in photoelectric conversion efficiency and the solar cells all had different increases in wear ratios, so it can be seen that the solar cells prepared according to the present invention had higher surface hardness, lower surface wear, and higher photoelectric conversion efficiency.
The foregoing shows and describes the general principles, principal features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A double-sided coated laminated solar cell is characterized in that: the solar cell comprises a cell panel, wherein the cell panel comprises a cell core and light transmission layers attached to the upper surface and the lower surface of the cell core, the cell core comprises a laminated tile layer and plastic films arranged on the upper surface and the lower surface of the laminated tile layer, the light transmission layers comprise light transmission glass attached to the plastic films, and the surface of one side, away from the cell core, of the light transmission glass is provided with the light transmission film;
the battery plate at least comprises the following raw materials in parts by weight: 48-66 parts of monocrystalline silicon, 15-25 parts of silicon dioxide, 5-8 parts of soda ash, 6-15 parts of nitrogen, 6-15 parts of phosphorus, 12-22 parts of polyurethane, 9-15 parts of plastic, 1-4 parts of thickening agent, 1-3 parts of hardening agent and 2-9 parts of anti-reflection agent.
2. The double-sided coated laminated solar cell of claim 1, wherein: the hardening agent is a PET toughening agent.
3. The double-sided coated laminated solar cell of claim 1, wherein: the antireflection agent is an SBS thermoplastic elastomer, and the thickening agent is an alkali-soluble thickening agent containing an acid group.
4. A method for preparing a double-sided coated tiled solar cell according to any of the claims 1 to 3, comprising the steps of:
s1, putting monocrystalline silicon into a smelting furnace to be melted to form flaky silicon, injecting nitrogen and phosphorus impurities into the flaky silicon in an ion injection mode to form PN junctions, cutting the flaky silicon into square silicon wafers, stacking and arranging a plurality of silicon wafers into a string, and then laminating to form a tile layer;
s2, stirring and mixing the plastic and the thickening agent, putting the mixture into an extruder to be melted into a plastic mixture, extruding the plastic mixture to form a plastic sheet by tape casting, cutting edges of the plastic sheet to form a plastic film, and attaching the plastic film to the upper surface and the lower surface of the laminated tile layer;
s3, adding silicon dioxide and soda ash for melting, adding a hardening agent to form molten glass, performing plasticity on the glass through a rolling method, and performing compression molding on the cooled glass to obtain transparent glass;
s4, mixing and melting polyurethane and an anti-reflection agent, rolling to form a polyurethane film, carrying out vacuum evaporation on the polyurethane film, and plating a layer of light-transmitting film on the surface of the light-transmitting glass;
and S5, attaching the surface of one side, which is not plated with the light-transmitting film, of the light-transmitting glass to the plastic film to form a battery panel, pumping out air in the battery panel, heating to melt the plastic film to fill a gap in the battery panel, and bonding the laminated tile layer with the light-transmitting layer.
5. The method for preparing a double-sided coated laminated solar cell according to claim 4, wherein the method comprises the following steps: in S1, the ion implantation mode is that firstly, impurity atoms, namely nitrogen and phosphorus atoms, are changed into ionized impurity ions, and then the impurity ion flow is emitted to the silicon wafer under the action of an electric field and enters the silicon wafer to form a PN junction.
6. The method for preparing a double-sided coated laminated solar cell according to claim 4, wherein the method comprises the following steps: in S2, the specific method of tape casting sheeting comprises the steps of mixing plastic powder and a thickening agent in a solvent to form uniform and stable suspended slurry, enabling the slurry to flow onto a scraper and hanging and smearing the slurry by a scraper to form a plastic blank, and drying the plastic blank to remove the solvent in the plastic blank to form the plastic sheet.
7. The method for preparing a double-sided coated laminated solar cell according to claim 6, wherein the method comprises the following steps: in the S2, the thickness of the plastic sheet is 0.35-0.65MM.
8. The method for preparing a double-sided coated tiled solar cell according to claim 4, wherein: and in the S3, the melting temperature of the glass liquid is 800-1300 ℃, stirring is carried out during melting, wherein the stirring speed of the glass liquid is 7-10rpm/min, in the rolling process, the glass liquid passes through the rolling rollers of a rolling machine to form a glass plate with the plate width matched with the tile-overlapping layer, and the glass plate is cooled to form the light-transmitting glass.
9. The method for preparing a double-sided coated tiled solar cell according to claim 4, wherein: in S4, the polyurethane film is plated on the surface of the transparent glass by placing the polyurethane film in a vacuum film plating chamber, heating and evaporating the polyurethane film through an evaporation source, and evaporating particles to escape from the surface of an evaporation source and fly to the surface of the transparent glass to be condensed to form the transparent film.
10. The method for preparing a double-sided coated tiled solar cell according to claim 4, wherein: and in S5, after the plastic film fills gaps in the cell panel, the plastic film is coated on the periphery of the cell panel by adopting silica gel.
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1398029A (en) * | 1973-03-30 | 1975-06-18 | Ladco Enterprises Ltd | Plastically deformable laminated material in the form of sheets or web |
| US4067764A (en) * | 1977-03-15 | 1978-01-10 | Sierracin Corporation | Method of manufacture of solar cell panel |
| JP2003234341A (en) * | 2001-09-21 | 2003-08-22 | Dainippon Screen Mfg Co Ltd | Substrate treatment equipment |
| JP2011071447A (en) * | 2009-09-28 | 2011-04-07 | Dainippon Printing Co Ltd | Backside protective sheet for solar cell module, and solar cell module |
| CN102714139A (en) * | 2010-03-09 | 2012-10-03 | 东京毅力科创株式会社 | Joining system, joining method, program and computer memory media |
| EP2525414A2 (en) * | 2011-05-14 | 2012-11-21 | Kalberlah, Klaus | Glass-free photovoltaic module and method for its manufacture |
| US20120308356A1 (en) * | 2011-06-01 | 2012-12-06 | Toshio Yokoyama | Substrate processing apparatus, substrate transfer method and substrate transfer device |
| CN106587600A (en) * | 2016-12-26 | 2017-04-26 | 凤阳嘉禾农业科技有限公司 | Manufacturing method of radiation protection glass |
| JP2017139285A (en) * | 2016-02-02 | 2017-08-10 | 東レフィルム加工株式会社 | Rear surface protective sheet for solar cell module and method of manufacturing the sane, and method of manufacturing solar cell module |
| CN107134502A (en) * | 2017-05-04 | 2017-09-05 | 宁波长阳科技股份有限公司 | A kind of three-layer co-extruded high reflection type solar cell backboard film and preparation method thereof |
| CN108538455A (en) * | 2018-05-17 | 2018-09-14 | 天津宝兴威科技股份有限公司 | A kind of transparent conductive film and preparation method thereof |
| CN111406304A (en) * | 2017-11-28 | 2020-07-10 | 朗姆研究公司 | Real-time monitoring method and device for plasma chamber wall condition |
| CN112500694A (en) * | 2020-12-04 | 2021-03-16 | 东莞威赢高尔夫用品有限公司 | Electronic equipment veneer material and preparation method thereof |
-
2022
- 2022-08-31 CN CN202211050258.3A patent/CN115172497B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1398029A (en) * | 1973-03-30 | 1975-06-18 | Ladco Enterprises Ltd | Plastically deformable laminated material in the form of sheets or web |
| US4067764A (en) * | 1977-03-15 | 1978-01-10 | Sierracin Corporation | Method of manufacture of solar cell panel |
| JP2003234341A (en) * | 2001-09-21 | 2003-08-22 | Dainippon Screen Mfg Co Ltd | Substrate treatment equipment |
| JP2011071447A (en) * | 2009-09-28 | 2011-04-07 | Dainippon Printing Co Ltd | Backside protective sheet for solar cell module, and solar cell module |
| CN102714139A (en) * | 2010-03-09 | 2012-10-03 | 东京毅力科创株式会社 | Joining system, joining method, program and computer memory media |
| EP2525414A2 (en) * | 2011-05-14 | 2012-11-21 | Kalberlah, Klaus | Glass-free photovoltaic module and method for its manufacture |
| US20120308356A1 (en) * | 2011-06-01 | 2012-12-06 | Toshio Yokoyama | Substrate processing apparatus, substrate transfer method and substrate transfer device |
| JP2017139285A (en) * | 2016-02-02 | 2017-08-10 | 東レフィルム加工株式会社 | Rear surface protective sheet for solar cell module and method of manufacturing the sane, and method of manufacturing solar cell module |
| CN106587600A (en) * | 2016-12-26 | 2017-04-26 | 凤阳嘉禾农业科技有限公司 | Manufacturing method of radiation protection glass |
| CN107134502A (en) * | 2017-05-04 | 2017-09-05 | 宁波长阳科技股份有限公司 | A kind of three-layer co-extruded high reflection type solar cell backboard film and preparation method thereof |
| CN111406304A (en) * | 2017-11-28 | 2020-07-10 | 朗姆研究公司 | Real-time monitoring method and device for plasma chamber wall condition |
| CN108538455A (en) * | 2018-05-17 | 2018-09-14 | 天津宝兴威科技股份有限公司 | A kind of transparent conductive film and preparation method thereof |
| CN112500694A (en) * | 2020-12-04 | 2021-03-16 | 东莞威赢高尔夫用品有限公司 | Electronic equipment veneer material and preparation method thereof |
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