CN115172366A - Gallium nitride device of monolithic integrated voltage divider - Google Patents
Gallium nitride device of monolithic integrated voltage divider Download PDFInfo
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- CN115172366A CN115172366A CN202211075943.1A CN202211075943A CN115172366A CN 115172366 A CN115172366 A CN 115172366A CN 202211075943 A CN202211075943 A CN 202211075943A CN 115172366 A CN115172366 A CN 115172366A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 69
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 238000005468 ion implantation Methods 0.000 claims description 17
- 229910002704 AlGaN Inorganic materials 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 238000001514 detection method Methods 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 230000024241 parasitism Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0084—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Abstract
The invention discloses a gallium nitride device of a monolithically integrated voltage divider, which comprises a gallium nitride transistor and the voltage divider, wherein the gallium nitride transistor and the voltage divider are monolithically integrated. The gallium nitride device and the voltage divider are integrated in a single chip mode, so that the device can accurately detect the voltage between the source electrode and the drain electrode, when the temperature is changed, the resistance ratio among a plurality of homogeneous resistors in the voltage divider is unchanged, the voltage dividing coefficient of the voltage divider cannot be influenced by the temperature change, the accurate detection of the voltage between the source electrode and the drain electrode is further improved, and the breakdown damage of the device is avoided. Through the mode of monolithic integrated voltage divider, can effectively reduce the wire length between resistance and the gallium nitride device, reduce parasitism, reduce and postpone, compare in the scheme that current direct external resistance of installing additional, the resistance volume of this scheme is minimum, and the cost is extremely low, can guarantee under the minimum circumstances of whole gallium nitride device volume change, that whole gallium nitride device volume maintains original less volume.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a gallium nitride device of a monolithic integrated voltage divider.
Background
A High Electron Mobility Transistor (HEMT), also called a modulation-doped FET (MODFET), is one type of field effect transistor, which uses semiconductor materials AlGaN and GaN having different energy gaps to form a two-dimensional electron air channel (2 DEG), unlike a mosfet that directly uses a doped semiconductor instead of a junction to form a conducting channel. Gallium nitride high electron mobility transistors (GaN HEMTs), which have been developed in recent years, attract a lot of attention by virtue of their good high frequency characteristics.
As shown in fig. 1, fig. 1 is a conventional gan hemt device structure, usually used as a normally-off switch, which is a transistor structure including a Gate (Gate), a Source (Source) and a Drain (Drain), and when a turn-on voltage is reached between the Gate and the Source, the transistor is turned on, otherwise, the transistor is turned off. If there is an off-voltage between the source and the drain when the transistor is in the off-state, the off-voltage between the source and the drain is usually high, e.g. the on-voltage of the transistor, i.e. the voltage VGS between the gate and the source is 5V, and when the transistor is off, the voltage VDS between the source and the drain may be as high as about 400V. In a power electronic system, a gallium nitride device is usually used as a switching device, and when special conditions such as surge, lightning strike and the like are faced, voltage fluctuation exists, and the gallium nitride device can be broken down seriously.
In order to solve the above problems, the existing solution is to connect a voltage divider to the source and drain of the original gan device, where the voltage divider includes two resistors connected in series, as shown in fig. 2, additionally add resistors R1 and R2 to the device by means of wiring, and package the device on a PCB board, and connect an IC to detect the voltage VDS on the source and drain of the gan device by means of the voltage divider, so as to accurately detect the voltage VDS by means of adding resistors and perform related feedback control, so as to avoid breakdown, for example, a control circuit is connected to the voltage divider, when the breakdown voltage is detected, a transistor is turned on to turn on the gate and the source, and the accuracy of the feedback control depends on the accuracy of the resistance of the resistor in the voltage divider.
The above-described manner of adding resistance to the wiring has several problems:
1. the distance of the connected wires is long, so that parasitic phenomenon is easy to generate, and delay exists;
2. the resistance value of a resistance element on the market is not accurate, so that the voltage detection precision is low;
3. the resistor elements on the market are large in size, the size of the resistor elements is in millimeter or even centimeter level, meanwhile, the price of the resistor elements is high, and the cost of devices can be greatly improved.
Disclosure of Invention
The invention provides a gallium nitride device of a monolithic integrated voltage divider, aiming at solving the problems existing when the voltage divider is arranged in the existing gallium nitride transistor.
According to the embodiment of the application, a gallium nitride device of a monolithically integrated voltage divider is provided, and comprises a gallium nitride transistor and the voltage divider, wherein the gallium nitride transistor is monolithically integrated with the voltage divider;
the voltage divider is connected with the source and the drain of the gallium nitride transistor.
Preferably, a conductive channel is formed within the voltage divider.
Preferably, the voltage divider comprises a p-GaN layer, an AlGaN layer and a GaN layer which are arranged in a stacked mode, and the conducting channel is formed on the p-GaN layer.
Preferably, a first ion implantation region is arranged on the outer periphery side of the conducting channel, and a p-GaN layer is arranged between the first ion implantation region and the conducting channel.
Preferably, the voltage divider includes an AlGaN layer and a GaN layer which are stacked, a second ion implantation region is disposed on the AlGaN layer, and the conductive channel is formed between the second ion implantation regions.
Preferably, the number of the conductive channels is two.
Compared with the prior art, the gallium nitride device of the monolithic integrated voltage divider has the following beneficial effects:
the voltage divider is arranged in the gallium nitride device, and the voltage divider is monolithically integrated with the gallium nitride device, namely, the monolithic integration of the voltage divider is carried out on the traditional gallium nitride epitaxial wafer, so that the device can realize the accurate detection of the voltage between the source electrode and the drain electrode. Meanwhile, the voltage divider is monolithically integrated in the gallium nitride device, so that a plurality of resistors in the voltage divider are homogeneous resistors, and when the voltage divider is faced with temperature change, the resistance ratio among a plurality of homogeneous resistors in the voltage divider is unchanged, so that the voltage dividing coefficient of the voltage divider cannot be influenced by the temperature change, the accurate detection of the voltage between the source electrode and the drain electrode is further improved, and the breakdown damage of the device is avoided. Further, the resistor is formed by photolithography, so that the dimensional accuracy of the resistor is extremely high. Furthermore, by means of a monolithic integrated voltage divider, the length of a wire between the resistor and the gallium nitride device can be effectively reduced, parasitic is reduced, and delay is reduced. Furthermore, compared with the existing scheme of directly additionally installing an external resistor, the resistor of the scheme has the advantages of extremely small volume and extremely low cost, the volume of the whole gallium nitride device can be ensured to maintain the original small volume under the condition of ensuring extremely small volume change of the whole gallium nitride device, and meanwhile, the additional purchase of resistor elements is avoided, and the device cost is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a gallium nitride transistor structure in the prior art.
Fig. 2 is a schematic diagram of a structure of a gan transistor externally connected to a voltage divider in the prior art.
Fig. 3 is a schematic structural diagram of a gan device of a monolithically integrated voltage divider according to a first embodiment of the present invention.
Fig. 4 is a schematic cross-sectional view of a gan device of a monolithically integrated voltage divider in the voltage divider portion according to a first embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a gan device of a monolithically integrated voltage divider in a voltage divider portion according to a first embodiment of the present invention.
Fig. 6 is a schematic structural diagram of a modified embodiment of a monolithically integrated voltage divider gan device according to a first embodiment of the present invention.
Fig. 7 is a schematic structural diagram of a gallium nitride device according to still another modified embodiment of the monolithically integrated voltage divider according to the first embodiment of the present invention.
Description of reference numerals:
100. a gallium nitride transistor;
200. a voltage divider;
300. a conductive channel;
400. a first ion implantation region;
500. a second ion implantation region.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
It is also to be understood that the terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be further understood that the term "and/or" as used in this specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items and includes such combinations.
Referring to fig. 3, a first embodiment of the present invention discloses a gan device of a monolithically integrated voltage divider, including a gan transistor 100 and a voltage divider 200, wherein the gan transistor 100 is monolithically integrated with the voltage divider 200, and the voltage divider 200 is connected to the source and the drain of the gan transistor 100.
It is understood that the gan transistor 100 and the voltage divider 200 belong to a gan package structure, and the voltage divider 200 has a conductive channel 300 formed thereon, so as to form a plurality of resistors on the gan transistor 100 by means of the conductive channel 300.
Referring to fig. 4 and 5, the voltage divider 200 includes a p-GaN layer, an AlGaN layer, and a GaN layer stacked together, the conduction channel 300 is formed on the p-GaN layer, that is, the p-GaN layer in a designated area is etched by photolithography to form the conduction channel 300, and the area of the conduction channel 300 is formed, and due to the absence of the p-GaN layer, the two-dimensional electron gas existing in the GaN layer is activated to conduct electricity, so that the GaN layer in the area forms a resistance, that is, the two-dimensional electron gas under the layer is depleted by the p-GaN layer, and the conduction channel 300 conducts electricity.
Optionally, referring to fig. 4 and fig. 6, as an embodiment, a first ion implantation region 400 is disposed on an outer peripheral side of the conduction channel 300, and a p-GaN layer is disposed between the first ion implantation region 400 and the conduction channel 300. That is, ion implantation is performed in the outer region of the p-GaN layer to form the first ion implantation region 400, which ensures two-dimensional electron gas consumption in the range of the high p-GaN layer by combining the depletion effect of the p-GaN layer and the dual mode of ion implantation, thereby improving the resistance accuracy of the formed conductive channel 300.
Optionally, referring to fig. 7, as another embodiment, the voltage divider 200 includes an AlGaN layer and a GaN layer stacked on each other, wherein a second ion implantation region 500 is disposed on the AlGaN layer, and the conductive channel 300 is formed between the second ion implantation regions 500. As shown in fig. 7, ion implantation is performed on the AlGaN layer to consume a two-dimensional electron gas in the GaN layer by means of ion implantation, and a region not ion-implanted remains conductive to form a resistance.
It will be appreciated that in the conductive channel 300 formed as described above, the size of the conductive channel 300 determines the magnitude of the resistance of the formed resistor, which is expressed by the following equation:
where R is the resistance of the finally formed resistor, RS is the sheet resistor, L is the length of the device in FIG. 5, W is the width of the conductive channel in FIG. 5, and the RS sheet resistor is constant, so the dimensions (L and W) of the conductive channel 300 determine the resistance of the formed resistor.
It is understood that, as shown in fig. 5, the number of the conductive channels 300 is two, and two of the conductive channels 300 form two resistors in the voltage divider 200.
It can be understood that, during the operation of the semiconductor device, the resistance of the semiconductor device changes with the change of the temperature, in this embodiment, the two resistances formed by the conductive channel 300 are the same resistances formed synchronously, and when facing the change of the temperature, the changes of the two resistances are the same, and the voltage division coefficient α formed by the two resistances in the voltage divider 200 is:
based on the above formula, although a single resistance may change with a change in temperature, since R1 and R2 are homogeneous resistances, the resistance changes uniformly, that is, the voltage division coefficient α does not change when the voltage divider 200 is exposed to a change in temperature.
Compared with the prior art, the gallium nitride device of the monolithic integrated voltage divider has the following beneficial effects:
the voltage divider is arranged in the gallium nitride device, and the voltage divider is monolithically integrated with the gallium nitride device, namely, the monolithic integration of the voltage divider is carried out on the traditional gallium nitride epitaxial wafer, so that the device can realize the accurate detection of the voltage between the source electrode and the drain electrode. Meanwhile, the voltage divider is monolithically integrated in the gallium nitride device, so that a plurality of resistors in the voltage divider are homogeneous resistors, and when the voltage divider is faced with temperature change, the resistance ratio among a plurality of homogeneous resistors in the voltage divider is unchanged, so that the voltage dividing coefficient of the voltage divider cannot be influenced by the temperature change, the accurate detection of the voltage between the source electrode and the drain electrode is further improved, and the breakdown damage of the device is avoided. Further, the resistor is formed by photolithography, so that the dimensional accuracy of the resistor is extremely high. Furthermore, by means of a monolithic integrated voltage divider, the length of a wire between the resistor and the gallium nitride device can be effectively reduced, parasitic is reduced, and delay is reduced. Furthermore, compared with the existing scheme of directly additionally installing an external resistor, the resistor of the scheme has the advantages of extremely small volume and extremely low cost, and can ensure that the volume of the whole gallium nitride device maintains the original small volume under the condition of ensuring the extremely small volume change of the whole gallium nitride device, avoid additionally purchasing a resistor element and reduce the cost of the device.
While the invention has been described with reference to specific embodiments, the invention is not limited thereto, and various equivalent modifications and substitutions can be easily made by those skilled in the art within the technical scope of the invention.
Claims (6)
1. The gallium nitride device of the monolithically integrated voltage divider is characterized by comprising a gallium nitride transistor and a voltage divider, wherein the gallium nitride transistor is monolithically integrated with the voltage divider;
the voltage divider is connected with the source electrode and the drain electrode of the gallium nitride transistor.
2. The monolithically integrated voltage divider gan device of claim 1, wherein: a conductive channel is formed within the voltage divider.
3. The monolithically integrated voltage divider gan device of claim 2, wherein: the voltage divider comprises a p-GaN layer, an AlGaN layer and a GaN layer which are arranged in a laminated mode, and the conducting channel is formed on the p-GaN layer.
4. A monolithically integrated voltage divider gan device according to claim 3, wherein: and a first ion implantation region is arranged on the periphery of the conductive channel, and a p-GaN layer is arranged between the first ion implantation region and the conductive channel.
5. The gan device of claim 2, wherein: the voltage divider comprises an AlGaN layer and a GaN layer which are arranged in a laminated mode, a second ion injection region is arranged on the AlGaN layer, and the conducting channel is formed between the second ion injection regions.
6. A gallium nitride device according to any one of claims 2-5, wherein: the number of the conductive channels is two.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211075943.1A CN115172366A (en) | 2022-09-05 | 2022-09-05 | Gallium nitride device of monolithic integrated voltage divider |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211075943.1A CN115172366A (en) | 2022-09-05 | 2022-09-05 | Gallium nitride device of monolithic integrated voltage divider |
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| CN205984984U (en) * | 2015-07-24 | 2017-02-22 | 半导体元件工业有限责任公司 | Circuit and integrated circuit |
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| CN113299706A (en) * | 2021-05-11 | 2021-08-24 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN114420743A (en) * | 2021-12-13 | 2022-04-29 | 晶通半导体(深圳)有限公司 | Reverse blocking high mobility transistor |
-
2022
- 2022-09-05 CN CN202211075943.1A patent/CN115172366A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4996570A (en) * | 1987-12-23 | 1991-02-26 | U.S. Philips Corp. | Semiconductor structure having a conductive channel |
| JPH07183495A (en) * | 1993-12-22 | 1995-07-21 | Nippon Steel Corp | Two-dimensional electron gas resistance device |
| KR20050010488A (en) * | 2003-07-16 | 2005-01-27 | 소니 가부시끼 가이샤 | Bias circuit and method of producing semiconductor device |
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Application publication date: 20221011 |