CN115172238A - Automatic wafer transmission method for vertical SiC high-temperature furnace tube equipment - Google Patents
Automatic wafer transmission method for vertical SiC high-temperature furnace tube equipment Download PDFInfo
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- CN115172238A CN115172238A CN202210824430.XA CN202210824430A CN115172238A CN 115172238 A CN115172238 A CN 115172238A CN 202210824430 A CN202210824430 A CN 202210824430A CN 115172238 A CN115172238 A CN 115172238A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67769—Storage means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a wafer automatic transmission method for vertical SiC high-temperature furnace tube equipment, which comprises the following steps: s1, setting parameters in a control system to designate the types of wafers stored in a wafer cache frame and a boat frame; s2, putting a wafer into a wafer box, and putting the wafer box on a material platform; s3, according to the type of the preset wafer, the wafer is conveyed into the corresponding wafer cache frame through a mechanical handle; s4, repeating the steps S2 and S3, and transferring all the wafers into the wafer cache frame; s5, sequentially transferring the wafers into the boat frame from the wafer cache frame through the manipulator according to the preset wafer placing type on the boat frame; s6, starting the process and waiting for the process to be finished; s7, transmitting the wafers on the boat frame back to the wafer cache frame in a first-in last-out mode; and S8, selecting the wafer to be blanked in the control system, and transferring the wafer into a wafer box from the corresponding wafer cache frame through a manipulator to complete blanking. The invention has the advantages of simple operation, high automation degree, high transmission efficiency and the like.
Description
Technical Field
The invention belongs to the technical field of third-generation semiconductor manufacturing, and particularly relates to an automatic wafer transmission method for vertical SiC high-temperature furnace tube equipment.
Background
Compared with the first and second semiconductor materials, the third generation semiconductor SiC material has the performance advantages of wider forbidden band width, higher breakdown electric field, higher thermal conductivity and the like, and is particularly suitable for 5G radio frequency devices and high-voltage power devices.
The SiC high-temperature furnace tube equipment is key equipment for manufacturing SiC chips. Most of the existing SiC high-temperature furnace tube equipment adopts a mode of manually loading and unloading wafer, has the defects of low automation degree and low efficiency, is more and more difficult to adapt to the growing SiC chip requirements, and is easy to cause the problems of chip scratching, pollution and the like due to manual loading and unloading.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides the automatic wafer transmission method for the vertical SiC high-temperature furnace tube equipment, which is simple to operate, high in automation degree and high in transmission efficiency.
In order to solve the technical problems, the invention adopts the following technical scheme:
a wafer automatic transmission method for vertical SiC high-temperature furnace tube equipment comprises the following steps:
s1, setting parameters in a control system, appointing the type of a wafer placed in a wafer cache frame, and appointing the type of the wafer stored in a wafer slot of a boat frame;
s2, placing a wafer of a preset type into a wafer box, and placing the wafer box on a material platform;
s3, according to the type of the preset wafer, the wafer is conveyed into the corresponding wafer cache frame from the wafer box through a mechanical handle;
s4, repeating the steps S2 and S3 until all the wafers are transferred into the wafer cache frame;
s5, sequentially transferring the wafers into the boat frame from the wafer cache frame through a manipulator according to the preset wafer placing type on the boat frame;
s6, starting a SiC wafer preparation process and waiting for the process to be finished;
s7, reversely transferring the wafers on the boat frame to the wafer cache frame in a first-in last-out mode according to a preset transfer-in path;
and S8, selecting the wafer to be blanked in the control system, and transferring the wafer into a wafer box of the material platform from the corresponding wafer cache frame through a manipulator to complete blanking.
As a further improvement of the invention, a Mapping sensor is arranged in the vertical SiC high-temperature furnace tube equipment and used for identifying the number of the wafers in the wafer box and the positions of the wafer slots in the wafer box.
As a further improvement of the present invention, in step S2, a manual material feeding manner is adopted to put the required wafer into the wafer box.
As a further improvement of the present invention, the types of wafers include: a baffle plate, a filling sheet, a process sheet and a monitoring sheet; in step S5, the sequence of the different types of wafers transferred into the boat rack is set by the control system.
As a further improvement of the invention, for the same type of wafer, the rule of taking and placing the wafer is to take down and place up.
As a further improvement of the invention, a plurality of wafer slots are arranged on the boat frame, and wafers of the same type or different types can be placed between the adjacent wafer slots.
As a further improvement of the invention, a plurality of wafer cache racks are arranged, and wafers of the same type or different types can be placed between the adjacent wafer cache racks.
As a further improvement of the invention, the material platform, the boat frame and the wafer buffer storage frames are arranged around the manipulator.
Compared with the prior art, the invention has the advantages that:
1. the invention relates to a wafer automatic transmission method for vertical SiC high-temperature furnace tube equipment, which is characterized in that the type of a wafer placed on a wafer cache frame is preset in a control system, the type of the wafer placed in a wafer groove of a boat frame is also specified, the wafer of a preset type is placed in a corresponding wafer box, a manipulator only needs to transfer the wafers in the wafer box to the wafer cache frame in sequence and then to the boat frame, after the SiC wafer completes the preparation process in the boat frame, the manipulator only needs to reversely transfer the wafers from the boat frame to the wafer cache frame in a first-in and last-out mode, and then the manipulator is controlled to transfer the wafers from the corresponding wafer cache frame to the wafer box according to needs so as to complete blanking.
2. According to the automatic wafer transmission method for the vertical SiC high-temperature furnace tube equipment, the material platform, the boat frame and the wafer cache frames are arranged around the manipulator in a surrounding manner, so that the structural arrangement of the vertical SiC high-temperature furnace tube equipment is effectively simplified, and the matching degree between the manipulator and the wafer box, the boat frame and the wafer cache frame is improved; the wafer buffer storage frames are arranged, and the boat frame is provided with the wafer slots, so that the transmission requirements of various types of wafers are well met; furthermore, the transmission sequence of the same type of wafers and different types of wafers is limited, so that the whole transmission process is well ordered, the control complexity of the manipulator is reduced, and the working efficiency and reliability of automatic transmission of the wafers are greatly improved.
Drawings
FIG. 1 is a schematic flow chart of the method for automatically transferring wafers of the vertical SiC high temperature furnace apparatus according to the present invention.
FIG. 2 is a schematic structural diagram of the vertical SiC high-temperature furnace tube apparatus of the present invention.
Illustration of the drawings: 1. a material platform; 2. a sheet cassette; 3. a wafer buffer storage rack; 4. a boat rack; 5. a robot arm.
Detailed Description
The invention is further described below with reference to the drawings and specific preferred embodiments of the description, without thereby limiting the scope of protection of the invention.
Examples
As shown in FIG. 1, the automatic wafer conveying method for vertical SiC high temperature furnace tube equipment of the invention comprises the following steps:
s1, setting parameters in a control system, appointing the type of the wafer placed in the wafer cache frame 3, and appointing the type of the wafer stored in the wafer slot of the boat frame 4. Namely, according to the type of the wafer to be transported, the placing position of each type of wafer on each wafer cache frame 3 is set in the control system, and meanwhile, the type of the wafer to be stored in each wafer slot of the boat frame 4 is set, so that the wafer classification transportation is realized. In this embodiment, the wafer is processed on a boat, and the boat frame 4 is also provided with a plurality of slots; depending on the actual situation, it may be desirable to specify what type of wafer each pocket holds, such as where the wafer is to be monitored, where the process wafer is to be held, etc., when in use.
S2, placing the wafer of the preset type into the wafer box 2, and placing the wafer box 2 on the material platform 1. The wafers of the respective type are sequentially put into the cassette 2 according to the setting in the control system, so that the wafers are transferred by the robot 5 subsequently. In this embodiment, the wafer box 2 has a three-dimensional structure, and 25 wafers can be placed in a standard wafer box, which may or may not be full in the process. In actual operation, the same type of wafer is generally placed in the cassette 2, for example, a cassette of process sheets is currently placed in the cassette, and before the wafer is placed in the wafer buffer rack 3 on the material table 1, the control system needs to designate that the wafer is a cassette of process sheets, and the robot 5 transfers the wafers in the cassette 2 one by one to the wafer buffer rack 3 where the process sheets are placed.
And S3, transferring the wafer into the corresponding wafer cache frame 3 through the manipulator 5 according to the preset wafer type. The manipulator 5 only needs to grab and transfer the wafers according to a preset sequence, and complex identification and control processes are not needed.
And S4, repeating the steps S2 and S3 until all the wafers are transferred into the wafer cache frame 3.
And S5, sequentially transferring the wafers into the boat frame 4 from the wafer cache frame 3 through the manipulator 5 according to the type of the wafers to be placed on the boat frame 4 preset in the control system.
And S6, starting the SiC wafer preparation process and waiting for the process to be finished.
And S7, reversely transmitting the wafers on the boat frame 4 to the wafer cache frame 3 in a first-in last-out mode according to a preset transmitting path. The prepared chips are reversely transmitted by adopting a first-in and second-out mode, so that the reliability of wafer conveying is ensured, and the chips are prevented from being polluted in the conveying process.
And S8, selecting the wafer to be blanked in the control system, and transferring the wafer from the corresponding wafer cache frame 3 into the wafer box 2 of the material platform 1 through the manipulator 5 to complete blanking.
In this embodiment, by presetting the type of the wafer placed on the wafer cache shelf 3 in the control system, also designating the type of the wafer placed in the wafer slot of the boat shelf 4, and placing the wafer of the preset type in the corresponding wafer box 2, the manipulator 5 only needs to transfer the wafers in the wafer box to the wafer cache shelf 3 in sequence and then to the boat shelf 4; after the preparation process of the SiC wafer in the boat frame 4 is finished, the manipulator 5 only needs to reversely transfer the wafer from the boat frame 4 to the wafer cache frame 3 in a first-in and last-out mode, and then controls the manipulator 5 to transfer the wafer from the corresponding wafer cache frame 3 to the wafer box 2 according to the requirement, so that the blanking can be finished.
In this embodiment, the vertical SiC high temperature furnace tube device is provided with a Mapping sensor, and the Mapping sensor is used for identifying the number of wafers in the wafer box 2 and identifying the positions of wafer grooves in the wafer box 2. In particular, the Mapping sensor may be provided on the material table 1, or may be integrated into the robot arm 5.
Further, in step S2, a manual material feeding manner is adopted to feed the required wafer into the wafer cassette 2. The film box 2 can be taken off from the material table 1 and can be moved; when feeding, a box is fed, and the empty box 2 is taken down to be placed in another box. According to the type of the wafer, the wafer is put into the wafer box 2 before entering the material platform 1. And the manual discharging mode is adopted, so that the accuracy of placing the wafer is improved, and the working complexity of the manipulator 5 is reduced.
Further, the types of wafers include: a baffle plate, a filling plate, a process plate and a monitoring plate. In step S5, the sequence of the different types of wafers to be transferred into the boat frame 4 is set by the control system. For example, the sequence of the different types of wafers to be transferred into the boat frame 4 is: a baffle plate, a filling plate, a process plate and a monitoring plate. For the same type of wafers, the wafer taking and placing rules are that the wafers are taken from the lower part and placed above the target position. By limiting the conveying sequence of the wafers, the orderliness of the whole conveying process is improved, and the situation that the wafers are placed wrongly is avoided.
In this embodiment, the boat rack 4 is provided with a plurality of wafer slots, and wafers of the same type or different types can be placed between adjacent wafer slots. According to the type and the number of the wafers, the type of the wafer placed in each wafer slot of the boat frame 4 is set in the control system, so that the purpose of accurately placing the wafers is achieved.
As shown in fig. 2, in the embodiment, four wafer cache shelves 3 are provided, the types of the wafers placed on each wafer cache shelf 3 may be set in the control system, and the same type or different types of wafers may be placed between adjacent wafer cache shelves 3, so as to improve the efficiency of wafer transportation. In this embodiment, the same type of wafer is placed on one wafer cache shelf 3, and four wafer cache shelves 3 can simultaneously store four types of wafers. Of course, it is not necessary to place a wafer on each wafer buffer rack 3 during the actual process.
As shown in fig. 2, in this embodiment, the material table 1, the boat frame 4, and the four wafer buffer frames 3 are disposed around the manipulator 5, so that the vertical SiC high-temperature furnace apparatus has a more compact structure, and is also beneficial to improving the order of wafer transportation.
In this embodiment, through encircleing material platform 1, boat frame 4 and a plurality of wafer buffer memory frame 3 and setting up around manipulator 5, effectively simplified vertical SiC high temperature furnace tube equipment's structure setting, improved the cooperation degree between manipulator 5 and spool box 2, boat frame 4 and the wafer buffer memory frame 3. Through setting up a plurality of wafer buffer memory frame 3 to set up a plurality of chip channels on boat frame 4, satisfied the transmission demand of multiple type wafer well. Furthermore, the transmission sequence of the same type of wafers and different types of wafers is limited, so that the whole transmission process is well ordered, the control complexity of the mechanical arm 5 is reduced, and the working efficiency and the reliability of automatic transmission of the wafers are greatly improved.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make many possible variations and modifications to the disclosed embodiments, or equivalent modifications, without departing from the spirit and scope of the invention, using the methods and techniques disclosed above. Therefore, any simple modifications, equivalent substitutions, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention are within the scope of the technical scheme of the present invention.
Claims (8)
1. A wafer automatic transmission method for vertical SiC high-temperature furnace tube equipment is characterized by comprising the following steps:
s1, setting parameters in a control system, appointing the type of a wafer placed in a wafer cache frame (3), and appointing the type of the wafer stored in a wafer slot of a boat frame (4);
s2, placing wafers of a preset type into the wafer box (2), and placing the wafer box (2) on the material platform (1);
s3, according to the type of the preset wafer, the wafer is transferred into the corresponding wafer cache frame (3) from the wafer box (2) through the mechanical arm (5);
s4, repeating the steps S2 and S3 until all the wafers are transferred into the wafer cache frame (3);
s5, sequentially transferring the wafers from the wafer cache rack (3) to the boat rack (4) through the manipulator (5) according to the type of the wafers to be placed preset on the boat rack (4);
s6, starting a SiC wafer preparation process and waiting for the process to be finished;
s7, reversely transmitting the wafers on the boat frame (4) to the wafer cache frame (3) in a first-in last-out mode according to a preset transmitting-in path;
and S8, selecting the wafer needing to be blanked in the control system, and transferring the wafer into a wafer box (2) of the material platform (1) from the corresponding wafer cache frame (3) through a manipulator (5) to complete blanking.
2. The automatic wafer conveying method for the vertical SiC high-temperature furnace tube equipment as claimed in claim 1, wherein a Mapping sensor is arranged in the vertical SiC high-temperature furnace tube equipment, and the Mapping sensor is used for identifying the number of wafers in a wafer box (2) and the positions of wafer slots in the wafer box (2).
3. The automatic wafer conveying method for the vertical SiC high-temperature furnace tube equipment as claimed in claim 1, wherein in the step S2, a required wafer is placed into the wafer box (2) in a manual discharging mode.
4. The automatic wafer conveying method for the vertical SiC high-temperature furnace tube equipment as claimed in claim 1, wherein the types of the wafers comprise: a baffle plate, a filling sheet, a process sheet and a monitoring sheet; in the step 5, the sequence of the wafers of different types to be transferred into the boat frame (4) is set by the control system.
5. The automatic wafer conveying method for the vertical SiC high-temperature furnace tube equipment as claimed in claim 1, wherein the wafer taking and placing rules for the wafers of the same type are that the wafers are taken from bottom to top.
6. The automatic wafer conveying method for the vertical SiC high temperature furnace tube equipment as claimed in any one of claims 1 to 5, wherein a plurality of wafer slots are arranged on the boat frame (4), and wafers of the same type or different types can be placed between adjacent wafer slots.
7. The automatic wafer conveying method for the vertical SiC high-temperature furnace tube equipment as claimed in any one of claims 1 to 5, wherein a plurality of wafer buffer shelves (3) are provided.
8. The automatic wafer conveying method for the vertical SiC high-temperature furnace tube equipment as claimed in claim 7, wherein the material table (1), the boat frame (4) and the plurality of wafer buffer storage frames (3) are arranged around the manipulator (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210824430.XA CN115172238A (en) | 2022-07-14 | 2022-07-14 | Automatic wafer transmission method for vertical SiC high-temperature furnace tube equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210824430.XA CN115172238A (en) | 2022-07-14 | 2022-07-14 | Automatic wafer transmission method for vertical SiC high-temperature furnace tube equipment |
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| Publication Number | Publication Date |
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| CN115172238A true CN115172238A (en) | 2022-10-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210824430.XA Pending CN115172238A (en) | 2022-07-14 | 2022-07-14 | Automatic wafer transmission method for vertical SiC high-temperature furnace tube equipment |
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| Country | Link |
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| CN (1) | CN115172238A (en) |
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- 2022-07-14 CN CN202210824430.XA patent/CN115172238A/en active Pending
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