CN115161622B - Environment-friendly plasma chemical vapor deposition equipment for diamond production - Google Patents
Environment-friendly plasma chemical vapor deposition equipment for diamond production Download PDFInfo
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- CN115161622B CN115161622B CN202210781970.4A CN202210781970A CN115161622B CN 115161622 B CN115161622 B CN 115161622B CN 202210781970 A CN202210781970 A CN 202210781970A CN 115161622 B CN115161622 B CN 115161622B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
Abstract
The invention discloses an environment-friendly plasma chemical vapor deposition device for diamond production, and belongs to the technical field of chemical vapor deposition. An environmentally friendly plasma chemical vapor deposition apparatus for diamond production comprising: a reaction furnace, a converter and a microwave generator; according to the invention, through the arranged central rotating shaft, the rotating fan blades and the driving gear and the driven gear, the sliding connection semi-ring is conveniently driven, so that the sliding connection semi-ring rotates, the spraying effect of the air outlet pipe on the surface of the diamond seed crystal is improved, the vapor deposition effect of the surface of the diamond seed crystal is improved, and meanwhile, the rotatable clamping device is arranged, so that the diamond seed crystal can rotate, the spraying of a plurality of surfaces of the diamond seed crystal is facilitated, and the vapor deposition effect is improved; and when the plasma gas pipeline is connected to the reaction furnace and the plasma gas is introduced into the reaction furnace, the clamping stability of the clamping device can be improved, and further the vapor deposition effect on diamond is improved.
Description
Technical Field
The invention relates to the technical field of chemical vapor deposition, in particular to an environment-friendly plasma chemical vapor deposition device for diamond production.
Background
Diamond is a mineral composed of carbon elements, is an allotrope of graphite, has a chemical formula of C, and is a common diamond body. Diamond is the hardest substance naturally occurring in nature; graphite can form synthetic diamond at high temperature and high pressure, and with the development of technology, diamond can be produced by vapor deposition using microwave plasma, and microwave plasma vapor deposition diamond equipment is an extremely important equipment for synthesizing diamond.
The invention patent of application number 202110677872.1 discloses a device for microwave plasma vapor deposition of diamond, which comprises a reaction furnace, wherein a reaction cavity is arranged in the reaction furnace, the top of the reaction furnace is provided with a converter communicated with the reaction cavity, the converter is connected with a microwave generator, a deposition substrate table is arranged in the reaction cavity, the inner wall of the reaction cavity is provided with a refraction plate, the inner wall of the reaction cavity is provided with an annular pipe at a position corresponding to the deposition substrate table, the annular pipe is provided with an air hole, the outer side of the reaction furnace is provided with a gas pipe, the gas pipe is communicated with the annular pipe through a connecting device, and the connecting device comprises a fixing frame arranged on the outer surface of the reaction furnace and a connecting frame arranged on the gas pipe; according to the invention, through the connecting device, the gas transmission pipeline can be conveniently and stably connected and installed on the reaction furnace, and meanwhile, the convenient disassembly work can be carried out, so that the device is very flexible and convenient to use, and is convenient to overhaul and maintain;
the device can realize the vapor deposition to the diamond, but the annular pipe in this application is fixed setting, leads to the gas outlet orientation on the annular pipe fixed, can't even mix at the surface of diamond, and the deposition substrate platform is fixed setting, can only carry out vapor deposition to the one side of diamond, and vapor deposition effect is not good.
Disclosure of Invention
The invention aims to solve the problems in the background art, and provides an environment-friendly plasma chemical vapor deposition device for diamond production.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
an environmentally friendly plasma chemical vapor deposition apparatus for diamond production comprising: the device comprises a reaction furnace, a converter and a microwave generator, wherein the converter is connected to the upper end of the reaction furnace, and the microwave generator is connected with the converter; the clamping device is arranged in the reaction furnace and used for clamping the diamond; the gas receiving pipe is fixedly connected to the inner wall of the reaction furnace; wherein, the gas receiving pipe is fixedly connected with an annular pipe; the gas pipe is detachably and hermetically connected with the gas pipe; a fixed connection semi-ring fixedly connected to the gas receiving pipe; the reaction furnace is fixedly connected with an upper supporting plate, a sliding connection semi-ring is rotationally connected to the upper supporting plate, and the sliding connection semi-ring is rotationally connected with the fixed connection semi-ring; the driven gear and the air outlet pipe are fixedly connected to the sliding connection semi-ring; a central rotating shaft rotatably connected to the annular tube; the central rotating shaft is fixedly connected with a rotating fan blade and a driving gear, the rotating fan blade is positioned in the annular tube, the driving gear is positioned at the upper end of the rotating fan blade, and the driving gear is meshed with the driven gear.
In order to facilitate gripping of the diamond, preferably, the gripping means comprises: the driving rotating shafts are symmetrically and rotatably connected to the reaction furnace; the reaction furnace is fixedly connected with a driving motor, the driving rotating shaft is fixedly connected with the output end of the driving motor, and a sliding groove is formed in the driving rotating shaft; the sliding clamping rod is connected in the sliding groove in a sliding way; and the two ends of the clamping spring are respectively and fixedly connected to the driving rotating shaft and the sliding clamping rod.
In order to improve the fixing effect on the diamond, preferably, the sliding clamping rod is fixedly connected with a clamping rubber protrusion.
In order to facilitate the fixing of the sliding clamping rod, preferably, a sliding cavity is arranged in the central rotating shaft, a sliding plate is connected in the sliding cavity in a sliding way, and a sliding connecting pipe communicated with the sliding cavity is fixedly connected on the upper supporting plate; the driving assembly for driving the sliding plate to move downwards is fixedly connected to the central rotating shaft; the reaction furnace is fixedly connected with a lower supporting plate, the lower supporting plate is fixedly connected with a cover closing frame, the cover closing frame is sleeved on a driving rotating shaft, a compression ring groove is formed in the driving rotating shaft, a plurality of groups of compression grooves communicated with the compression ring groove are fixedly connected to the driving rotating shaft, a compression block is slidably connected in the compression groove, the compression block is attached to a sliding clamping rod, and the sliding connecting pipe penetrates through the cover closing frame and is communicated with the compression ring groove.
In order to facilitate driving of the slide plate, preferably, the driving assembly includes: a rotating ring fixedly connected to the central rotating shaft; wherein, a centrifugal groove is arranged in the rotating ring, and a centrifugal block is connected in the centrifugal groove in a sliding way; the two ends of the sliding pull rope are fixedly connected to the centrifugal block and the sliding plate respectively; and two ends of the sliding spring are respectively and fixedly connected to the central rotating shaft and the sliding plate.
In order to facilitate resetting the compression block, preferably, the compression block is sleeved with a compression spring, and two ends of the compression spring are respectively and fixedly connected to the compression block and the compression ring groove.
In order to facilitate sealing of the fixed connection semi-ring and the sliding connection semi-ring, preferably, a sealing driving groove is formed in the upper supporting plate and is communicated with the centrifugal groove, a sealing rubber tube is arranged between the fixed connection semi-ring and the sliding connection semi-ring and is communicated with the sealing driving groove through a sealing connecting tube, and the sealing connecting tube is arranged on the upper supporting plate and the fixed connection semi-ring.
In order to facilitate the sealing connection between the gas pipe and the gas pipe, preferably, a gas transmission disc is fixedly connected to the gas pipe, a plug board is fixedly connected to the gas transmission disc, a plug air bag is connected to the plug board, a plug rubber pipe is fixedly connected to the gas transmission disc, and the plug rubber pipe is communicated with the plug air bag through the plug pipe; the gas receiving pipe is fixedly connected with a gas receiving disc, a plugging groove matched with the plugging plate is arranged in the gas receiving disc, and a plugging pressing plate matched with the plugging air bag is arranged in the plugging groove; the sliding connection is in the grafting slide in the grafting groove, the one end fixedly connected with extrusion spring of grafting slide, the other end fixed connection of extrusion spring is on the gas receiving dish.
In order to improve the fixing effect of the clamping rubber bulge, preferably, an extrusion air bag is arranged in the inserting groove, and an extrusion connecting pipe is communicated with the extrusion air bag; the driving rotating shaft is provided with an inflation ring groove, the sliding clamping rod is fixedly connected with an inflation tube communicated with the clamping rubber bulge, the other end of the inflation tube is communicated with the inflation ring groove, and the extrusion connecting tube penetrates through the cover frame and is communicated with the inflation ring groove.
Preferably, the lower end of the reaction furnace is fixedly connected with an exhaust pipe.
Compared with the prior art, the invention provides the environment-friendly plasma chemical vapor deposition equipment for diamond production, which has the following beneficial effects:
the device has the advantages that the parts which are not involved in the device are the same as or can be realized by adopting the prior art, through the arranged central rotating shaft, the rotating fan blades and the driving gear and the driven gear, the sliding connection semi-ring is convenient to drive, the sliding connection semi-ring is further rotated, the spraying effect of the air outlet pipe on the surface of the diamond seed crystal is further improved, the vapor deposition effect of the surface of the diamond seed crystal is further improved, and meanwhile, the rotatable clamping device is arranged, so that the diamond seed crystal can be rotated, the spraying on a plurality of surfaces of the diamond seed crystal is facilitated, and the vapor deposition effect is improved; and when the plasma gas pipeline is connected to the reaction furnace and the plasma gas is introduced into the reaction furnace, the clamping stability of the clamping device can be improved, and further the vapor deposition effect on diamond is improved.
Drawings
FIG. 1 is a schematic diagram of an environment-friendly plasma chemical vapor deposition device for diamond production according to the present invention;
FIG. 2 is a schematic cross-sectional view of an environment-friendly plasma chemical vapor deposition apparatus for diamond production according to the present invention;
FIG. 3 is a schematic view of the structure of part A in FIG. 2 of an environment-friendly plasma chemical vapor deposition apparatus for diamond production according to the present invention;
FIG. 4 is a schematic view of the structure of part B in FIG. 2 of an environmentally friendly plasma CVD apparatus for diamond production according to the present invention;
FIG. 5 is a schematic view of the structure of part C in FIG. 4 of an environmentally friendly plasma CVD apparatus for diamond production according to the present invention;
FIG. 6 is a schematic view of a sliding connection half ring of an environmentally friendly plasma CVD apparatus for diamond production according to the present invention;
FIG. 7 is a schematic diagram of a driving spindle of an environment-friendly plasma CVD apparatus for diamond production according to the present invention;
FIG. 8 is a schematic diagram of a driving spindle of an environment-friendly plasma CVD apparatus for diamond production according to the present invention;
FIG. 9 is a schematic diagram of a gas delivery tray of an environmentally friendly plasma CVD apparatus for diamond production according to the present invention;
fig. 10 is a schematic structural view of an air-receiving plate of an environment-friendly plasma chemical vapor deposition device for diamond production.
In the figure: 1. a reaction furnace; 101. a converter; 102. a microwave generator; 103. an exhaust pipe; 104. an upper supporting plate; 105. a lower support plate; 2. a gas pipe; 201. a gas transmission disc; 202. an air receiving disc; 203. a plug board; 204. inserting an air bag; 205. a connecting pipe is inserted; 206. inserting a rubber tube; 207. a plug-in groove; 208. a pressing plate is inserted; 209. a plug-in sliding plate; 2091. extruding the air bag; 2092. extruding a spring; 2093. extruding the connecting pipe; 3. a gas receiving pipe; 301. an annular tube; 302. fixing the connecting semi-ring; 303. sealing the rubber tube; 304. sealing the connecting pipe; 305. sealing the driving groove; 4. a center rotation shaft; 4001. rotating the fan blades; 4002. a drive gear; 4003. a rotating ring; 401. a sliding chamber; 402. a sliding plate; 403. a sliding spring; 404. a sliding connecting pipe; 405. sliding the pull rope; 406. a centrifugal block; 407. a centrifugal tank; 5. a sliding connection half ring; 501. an air outlet pipe; 502. a driven gear; 6. driving the rotating shaft; 601. a sliding groove; 602. a clamping spring; 7. an inflatable ring groove; 701. an inflation tube; 8. a pressing ring groove; 801. a compaction groove; 802. a compaction block; 9. a sliding clamping rod; 901. clamping the rubber bulge; 10. and (5) covering the frame.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments.
In the description of the present invention, it should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "top," "bottom," "inner," "outer," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate description of the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Example 1:
referring to fig. 1-10, an environmentally friendly plasma chemical vapor deposition apparatus for diamond production, comprising: the reaction device comprises a reaction furnace 1, a converter 101 and a microwave generator 102, wherein the converter 101 is connected to the upper end of the reaction furnace 1, the microwave generator 102 is connected with the converter 101, and the microwave generator 102 emits microwaves which are converted by the converter 101 and then enter the reaction furnace 1 for reaction, so that the reaction efficiency is improved; the gas receiving pipe 3 is fixedly connected to the inner wall of the reaction furnace 1; wherein, the gas receiving pipe 3 is fixedly connected with an annular pipe 301; the gas pipe 2 is detachably and hermetically connected with the gas pipe 3; a fixed connection half ring 302 fixedly connected to the gas pipe 3; wherein, the reaction furnace 1 is fixedly connected with an upper supporting plate 104, the upper supporting plate 104 is rotationally connected with a sliding connection semi-ring 5, and the sliding connection semi-ring 5 is rotationally connected with a fixed connection semi-ring 302; a driven gear 502 and an air outlet pipe 501 which are fixedly connected to the sliding connection semi-ring 5; a center rotation shaft 4 rotatably connected to the ring tube 301; wherein, the center rotation shaft 4 is fixedly connected with a rotation fan blade 4001 and a driving gear 4002, the rotation fan blade 4001 is positioned in the annular tube 301, the driving gear 4002 is positioned at the upper end of the rotation fan blade 4001, and the driving gear 4002 is meshed with the driven gear 502;
when the device is used, when the plasma chemical gas passes through the reaction furnace 1, the chemical gas enters the reaction furnace 1 through the gas transmission pipe 2 and the gas receiving pipe 3, firstly passes through the annular pipe 301, then passes through the fixed connection semi-ring 302 and the sliding connection semi-ring 5, and finally is discharged through the gas outlet pipe 501, and then the diamond seed crystal is subjected to vapor deposition;
it should be noted that when the gas passes through the annular tube 301, the rotating fan blades 4001 are driven to rotate, and then the central rotating shaft 4 is driven to rotate, so that the central rotating shaft 4 drives the driving gear 4002 to rotate, and the driven gear 502 is driven to rotate through the meshing effect of the gears, so that the sliding connection semi-ring 5 can be driven to rotate, the gas outlet tube 501 rotates along with the rotation of the sliding connection semi-ring 5, and then the gas outlet tube 501 rotates around the diamond seed crystal, so that the contact frequency of the plasma gas on the gas outlet tube 501 and the diamond seed crystal is improved, the contact effect is improved, and the vapor deposition effect on the diamond seed crystal is further improved.
The clamping device is arranged in the reaction furnace 1 and is used for clamping diamond seed crystals; specifically, the clamping device includes: a driving rotating shaft 6 symmetrically and rotatably connected to the reaction furnace 1; wherein, a driving motor is fixedly connected to the reaction furnace 1, the driving motor is not shown in the figure, a driving rotating shaft 6 is fixedly connected to the output end of the driving motor, and a sliding groove 601 is arranged in the driving rotating shaft 6; a slide clamping rod 9 slidably connected in the slide groove 601; clamping springs 602, both ends of which are fixedly connected to the driving rotating shaft 6 and the sliding clamping rod 9 respectively;
it should be noted that the cross sections of the sliding clamping rod 9 and the sliding groove 601 are rectangular;
the sliding clamping rod 9 is fixedly connected with a clamping rubber protrusion 901;
the diamond seed crystal is placed between the two sliding clamping rods 9, and at the moment, the sliding clamping rods 9 are pushed to slide under the action of the clamping springs 602, so that the sliding clamping rods 9 are attached to the diamond seed crystal phase, and the effect of fixing the diamond seed crystal is achieved;
and after the diamond seed crystal is clamped, the driving motor can drive the driving rotating shaft 6 to rotate, and then the rectangular sliding clamping rod 9 is driven to rotate through the rectangular sliding groove 601, so that the rotation of the diamond seed crystal is realized, the upper surface and the lower surface of the diamond seed crystal can be vapor deposited, and the deposition effect and the efficiency of the diamond seed crystal are improved.
A sliding cavity 401 is arranged in the central rotating shaft 4, a sliding plate 402 is connected in the sliding cavity 401 in a sliding way, and a sliding connecting pipe 404 communicated with the sliding cavity 401 is fixedly connected on the upper supporting plate 104; a driving component for driving the sliding plate 402 to move downwards is fixedly connected to the central rotating shaft 4; the reaction furnace 1 is fixedly connected with a lower supporting plate 105, the lower supporting plate 105 can support a driving rotating shaft 6 through a cover frame 10, the cover frame 10 is fixedly connected to the lower supporting plate 105, the cover frame 10 is sleeved on the driving rotating shaft 6, a compression ring groove 8 is arranged on the driving rotating shaft 6, a plurality of groups of compression grooves 801 communicated with the compression ring groove 8 are fixedly connected to the driving rotating shaft 6, compression blocks 802 are slidably connected in the compression grooves 801, the compression blocks 802 are attached to a sliding clamping rod 9, and a sliding connecting pipe 404 penetrates through the cover frame 10 and is communicated with the compression ring groove 8;
when the central rotating shaft 4 rotates, the driving assembly is driven to work, so that the driving assembly drives the sliding plate 402 to move downwards, the sliding plate 402 moves downwards, gas in the sliding cavity 401 is extruded, the gas enters the compression ring groove 8 through the sliding connecting pipe 404, the gas pressure in the compression ring groove 8 is increased, the compression block 802 is extruded to slide, the compression block 802 is tightly attached to the sliding clamping rod 9, the sliding clamping rod 9 is prevented from sliding, and the fixing effect of the sliding clamping rod 9, namely the clamping effect on diamond seed crystals is improved;
that is, when the plasma gas is introduced into the reaction furnace 1, the clamping effect on the diamond seed crystal can be improved, and when the plasma gas is not introduced, the sliding plate 402 is reset, that is, the compression effect of the compression block 802 on the sliding clamping rod 9 is lost, so that the diamond seed crystal after vapor deposition is conveniently taken out.
The drive assembly includes: a rotary ring 4003 fixedly attached to the center rotary shaft 4; wherein, a centrifugal groove 407 is arranged in the rotary ring 4003, and a centrifugal block 406 is connected in the centrifugal groove 407 in a sliding way; a sliding pull rope 405, two ends of which are fixedly connected to the centrifugal block 406 and the sliding plate 402 respectively; a sliding spring 403, both ends of which are fixedly connected to the central rotation shaft 4 and the sliding plate 402, respectively;
the compression block 802 is sleeved with a compression spring, two ends of the compression spring are respectively fixedly connected to the compression block 802 and the compression ring groove 8, and the compression spring is used for driving the compression block 802 to reset;
when the central rotating shaft 4 rotates, the rotating ring 4003 and the centrifugal blocks 406 therein are driven to rotate, at this time, the centrifugal blocks 406 are acted by centrifugal force when rotating, and the centrifugal blocks 406 slide in the centrifugal grooves 407, so that the centrifugal blocks 406 pull the sliding plate 402 to slide downwards through the sliding pull ropes 405, and the centrifugal blocks 406 are provided with a plurality of groups, so as to have a pulling effect on the sliding plate 402;
when the center rotation shaft 4 is not rotated, the centrifugal force applied to the centrifugal block 406 is removed, and the slide plate 402 is restored by the slide spring 403.
The upper supporting plate 104 is provided with a seal driving groove 305, the seal driving groove 305 is communicated with a centrifugal groove 407, a seal rubber tube 303 is arranged between the fixed connection semi-ring 302 and the sliding connection semi-ring 5, the seal rubber tube 303 is communicated with the seal driving groove 305 through a seal connecting tube 304, and the seal connecting tube 304 is arranged on the upper supporting plate 104 and the fixed connection semi-ring 302;
when the centrifugal block 406 slides, gas in the centrifugal groove 407 is extruded to enter the seal driving groove 305, so that the gas in the seal driving groove 305 enters the seal rubber tube 303 through the seal connecting tube 304, and the seal rubber tube 303 expands, so that the seal rubber tube 303 has a sealing effect on the connecting positions of the fixed connection semi-ring 302 and the sliding connection semi-ring 5.
The gas pipe 2 is fixedly connected with a gas pipe disc 201, the gas pipe disc 201 is fixedly connected with a plug board 203, the plug board 203 is connected with a plug air bag 204, the gas pipe disc 201 is fixedly connected with a plug rubber pipe 206, and the plug rubber pipe 206 is communicated with the plug air bag 204 through a plug pipe 205; the gas receiving pipe 3 is fixedly connected with a gas receiving disc 202, a plug groove 207 matched with the plug board 203 is arranged in the gas receiving disc 202, and a plug pressing plate 208 matched with the plug air bag 204 is arranged in the plug groove 207; the plug-in sliding plate 209 is slidably connected in the plug-in groove 207, one end of the plug-in sliding plate 209 is fixedly connected with the extrusion spring 2092, and the other end of the extrusion spring 2092 is fixedly connected to the gas receiving disc 202;
when the gas pipe 2 is connected with the gas pipe 3, the plug board 203 is inserted into the insertion groove 207, so that the gas tray 201 is attached to the gas tray 202;
then, the gas transmission disc 201 is rotated, so that the plug board 203 slides in the plug groove 207, when the plug board 203 is attached to the plug pressing plate 208, the plug pressing plate 208 can squeeze the plug air bag 204, so that the plug air bag 204 is compressed, gas in the plug air bag 204 enters the plug rubber tube 206 through the plug tube 205, the plug rubber tube 206 is expanded, and the plug rubber tube 206 is positioned between the gas transmission disc 201 and the gas receiving disc 202, so that the connection sealing effect on the gas transmission tube 2 and the gas receiving tube 3 is improved;
at this time, the compression effect of the compression spring 2092 pushes the plug slide plate 209 to slide, so that the plug slide plate 209 compresses the plug plate 203, preventing the plug plate 203 from rotating, and improving the fixing effect of the plug plate 203.
An extrusion air bag 2091 is arranged in the inserting groove 207, and an extrusion connecting pipe 2093 is communicated with the extrusion air bag 2091; an inflation ring groove 7 is arranged on the driving rotating shaft 6, an inflation tube 701 communicated with the clamping rubber bulge 901 is fixedly connected to the sliding clamping rod 9, the other end of the inflation tube 701 is communicated with the inflation ring groove 7, and an extrusion connecting tube 2093 penetrates through the cover closing frame 10 and is communicated with the inflation ring groove 7;
when the plugboard 203 is inserted into the pluggroove 207, the plugboard 209 is extruded to slide, so that the plugboard 209 is extruded to compress the air bag 2091, then air is discharged out through the extrusion connecting pipe 2093 and enters the air inflation ring groove 7, and then the air is inflated through the air inflation pipe 701 to the clamping rubber protrusion 901, so that the clamping rubber protrusion 901 is stably attached to the diamond seed crystal, and the diamond seed crystal is prevented from falling off due to centrifugal force when rotating.
The lower end of the reaction furnace 1 is fixedly connected with an exhaust pipe 103, so that the gas in the reaction furnace 1 can be exhausted.
Example 2:
referring to fig. 1-10, an environmentally friendly plasma chemical vapor deposition apparatus for diamond production, when the apparatus is in use:
the diamond seed crystal is placed between the two sliding clamping rods 9, and at the moment, the sliding clamping rods 9 are pushed to slide under the action of the clamping springs 602, so that the sliding clamping rods 9 are attached to the diamond seed crystal phase, and the effect of fixing the diamond seed crystal is achieved;
after the diamond seed crystal is clamped, the driving motor drives the driving rotating shaft 6 to rotate, and then the rectangular sliding clamping rod 9 is driven to rotate through the rectangular sliding groove 601, so that the rotation of the diamond seed crystal is realized, the upper surface and the lower surface of the diamond seed crystal can be vapor deposited, and the deposition effect and the deposition efficiency of the diamond seed crystal are improved;
when the gas pipe 2 is connected with the gas pipe 3, the plug board 203 is inserted into the insertion groove 207, so that the gas tray 201 is attached to the gas tray 202;
then, the gas transmission disc 201 is rotated, so that the plug board 203 slides in the plug groove 207, when the plug board 203 is attached to the plug pressing plate 208, the plug pressing plate 208 can squeeze the plug air bag 204, so that the plug air bag 204 is compressed, gas in the plug air bag 204 enters the plug rubber tube 206 through the plug tube 205, the plug rubber tube 206 is expanded, and the plug rubber tube 206 is positioned between the gas transmission disc 201 and the gas receiving disc 202, so that the connection sealing effect on the gas transmission tube 2 and the gas receiving tube 3 is improved;
at this time, the compression effect of the compression spring 2092 pushes the plug slide plate 209 to slide, so that the plug slide plate 209 compresses the plug plate 203, preventing the plug plate 203 from rotating, and improving the fixing effect of the plug plate 203;
when the plug board 203 is inserted into the insertion groove 207, the insertion slide board 209 is extruded to slide, so that the insertion slide board 209 is extruded to compress the extrusion air bag 2091, and then the air is discharged through the extrusion connecting pipe 2093 to enter the air inflation ring groove 7, and then the air is inflated through the air inflation pipe 701 to the clamping rubber protrusion 901, so that the clamping rubber protrusion 901 is stably attached to the diamond seed crystal, and the diamond seed crystal is prevented from falling off due to centrifugal force when rotating;
when the plasma chemical gas passes through the reaction furnace 1, the chemical gas passes through the gas transmission pipe 2 and the gas receiving pipe 3 and enters the reaction furnace 1, and then passes through the annular pipe 301, the fixed connection semi-ring 302 and the sliding connection semi-ring 5, and finally is discharged through the gas outlet pipe 501, so that the diamond seed crystal is subjected to vapor deposition;
it should be noted that when the gas passes through the annular tube 301, the rotating fan blade 4001 is driven to rotate, and then the central rotating shaft 4 is driven to rotate, so that the central rotating shaft 4 drives the driving gear 4002 to rotate, and the driven gear 502 is driven to rotate through the meshing effect of the gears, so that the sliding connection semi-ring 5 can be driven to rotate, the gas outlet tube 501 rotates along with the rotation of the sliding connection semi-ring 5, and then the gas outlet tube 501 rotates around the diamond seed crystal, so as to improve the contact frequency and the contact effect of the plasma gas on the gas outlet tube 501 and the diamond seed crystal, and further improve the vapor deposition effect on the diamond seed crystal;
when the central rotating shaft 4 rotates, the rotating ring 4003 and the centrifugal block 406 therein are driven to rotate, at the moment, the centrifugal block 406 is acted by centrifugal force when rotating, the centrifugal block 406 slides in the centrifugal groove 407, so that the centrifugal block 406 pulls the sliding plate 402 to slide downwards through the sliding pull rope 405, a plurality of groups of centrifugal blocks 406 are arranged, the sliding plate 402 is enabled to move downwards due to the pulling effect on the sliding plate 402, gas in the sliding cavity 401 is extruded, and enters the compression ring groove 8 through the sliding connecting pipe 404, so that the air pressure in the compression ring groove 8 is increased, the compression block 802 is extruded to slide, the compression block 802 is tightly attached to the sliding clamping rod 9, the sliding clamping rod 9 is prevented from sliding, and the fixing effect on the sliding clamping rod 9, namely the clamping effect on diamond seed crystals, is improved;
that is, when the plasma gas is introduced into the reaction furnace 1, the clamping effect on the diamond seed crystal can be improved, and when the plasma gas is not introduced, the central rotating shaft 4 does not rotate, the centrifugal force applied to the centrifugal block 406 disappears, and at this time, the sliding plate 402 is reset under the action of the sliding spring 403; resetting the sliding plate 402, namely eliminating the compaction effect of the compaction block 802 on the sliding clamping rod 9, and at the moment, conveniently taking out the diamond seed crystal after vapor deposition;
when the centrifugal block 406 slides, the gas in the centrifugal groove 407 is extruded to enter the seal driving groove 305, so that the gas in the seal driving groove 305 enters the seal rubber tube 303 through the seal connecting tube 304, and the seal rubber tube 303 expands, so that the seal rubber tube 303 has a sealing effect on the connecting positions of the fixed connection semi-ring 302 and the sliding connection semi-ring 5;
according to the invention, through the arranged central rotating shaft 4 and the rotating fan blades 4001, the driving gear 4002 and the driven gear 502 are matched, the sliding connection semi-ring 5 is conveniently driven, the sliding connection semi-ring 5 is further rotated, the spraying effect of the air outlet pipe 501 on the surface of the diamond seed crystal is further improved, the vapor deposition effect of the surface of the diamond seed crystal is further improved, and meanwhile, the rotatable clamping device is arranged, so that the diamond seed crystal can be rotated, the spraying of a plurality of surfaces of the diamond seed crystal is facilitated, and the vapor deposition effect is improved; and when the plasma gas pipeline is connected to the reaction furnace 1 and the plasma gas is introduced into the reaction furnace 1, the clamping stability of the clamping device can be improved, and further the vapor deposition effect on diamond is improved.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.
Claims (7)
1. An environmentally friendly plasma chemical vapor deposition apparatus for diamond production, comprising:
the device comprises a reaction furnace (1), a converter (101) and a microwave generator (102), wherein the converter (101) is connected to the upper end of the reaction furnace (1), and the microwave generator (102) is connected with the converter (101);
the clamping device is arranged in the reaction furnace (1) and used for clamping the diamond;
an air receiving pipe (3) fixedly connected to the inner wall of the reaction furnace (1);
wherein, the gas receiving pipe (3) is fixedly connected with an annular pipe (301);
the gas pipe (2) is detachably and hermetically connected with the gas pipe (3);
a fixed connector semi-ring (302) fixedly connected to the gas pipe (3);
the reaction furnace (1) is fixedly connected with an upper supporting plate (104), the upper supporting plate (104) is rotationally connected with a sliding connection semi-ring (5), and the sliding connection semi-ring (5) is rotationally connected with a fixed connection semi-ring (302);
a driven gear (502) and an air outlet pipe (501) which are fixedly connected to the sliding connection semi-ring (5);
a center rotation shaft (4) rotatably connected to the annular tube (301);
the central rotating shaft (4) is fixedly connected with rotating fan blades (4001) and driving gears (4002), the rotating fan blades (4001) are positioned in the annular tube (301), the driving gears (4002) are positioned at the upper ends of the rotating fan blades (4001), and the driving gears (4002) are meshed with the driven gears (502);
the clamping device comprises:
a driving rotating shaft (6) symmetrically and rotatably connected to the reaction furnace (1);
the reaction furnace (1) is fixedly connected with a driving motor, the driving rotating shaft (6) is fixedly connected with the output end of the driving motor, and a sliding groove (601) is formed in the driving rotating shaft (6);
a sliding clamping rod (9) which is connected in the sliding groove (601) in a sliding way;
the two ends of the clamping spring (602) are respectively and fixedly connected to the driving rotating shaft (6) and the sliding clamping rod (9);
the sliding clamping rod (9) is fixedly connected with a clamping rubber protrusion (901);
a sliding cavity (401) is arranged in the central rotating shaft (4), a sliding plate (402) is connected in the sliding cavity (401), and a sliding connecting pipe (404) communicated with the sliding cavity (401) is fixedly connected to the upper supporting plate (104);
the central rotating shaft (4) is fixedly connected with a driving assembly for driving the sliding plate (402) to move downwards;
fixedly connected with bottom plate (105) on reacting furnace (1), fixedly connected with lid closes frame (10) on bottom plate (105), lid closes frame (10) and cup joints on drive pivot (6), be equipped with on drive pivot (6) and compress tightly annular (8), fixedly connected with multiunit and compress tightly annular (8) communicating compress tightly groove (801) on drive pivot (6), sliding connection has compact heap (802) in compress tightly groove (801), compact heap (802) paste with slip clamping lever (9) mutually, slip connecting pipe (404) run through lid and close frame (10) and compress tightly annular (8) and communicate with each other.
2. An environmentally friendly plasma chemical vapor deposition apparatus for diamond production as claimed in claim 1, wherein said drive assembly comprises:
a rotary ring (4003) fixedly connected to the center rotary shaft (4);
wherein, a centrifugal groove (407) is arranged in the rotating ring (4003), and a centrifugal block (406) is connected in the centrifugal groove (407) in a sliding way;
the two ends of the sliding pull rope (405) are respectively and fixedly connected to the centrifugal block (406) and the sliding plate (402);
and the two ends of the sliding spring (403) are respectively fixedly connected to the central rotating shaft (4) and the sliding plate (402).
3. The environment-friendly plasma chemical vapor deposition device for diamond production according to claim 1, wherein a compression spring is sleeved on the compression block (802), and two ends of the compression spring are fixedly connected to the compression block (802) and the compression ring groove (8) respectively.
4. The environment-friendly plasma chemical vapor deposition device for diamond production according to claim 2, wherein a seal driving groove (305) is formed in the upper supporting plate (104), the seal driving groove (305) is communicated with the centrifugal groove (407), a seal rubber tube (303) is arranged between the fixed connection semi-ring (302) and the sliding connection semi-ring (5), the seal rubber tube (303) is communicated with the seal driving groove (305) through a seal connecting tube (304), and the seal connecting tube (304) is arranged on the upper supporting plate (104) and the fixed connection semi-ring (302).
5. The environment-friendly plasma chemical vapor deposition device for diamond production according to claim 1, wherein an air delivery disc (201) is fixedly connected to the air delivery tube (2), a plug board (203) is fixedly connected to the air delivery disc (201), a plug airbag (204) is connected to the plug board (203), a plug rubber tube (206) is fixedly connected to the air delivery disc (201), and the plug rubber tube (206) is communicated with the plug airbag (204) through a plug tube (205);
the gas receiving pipe (3) is fixedly connected with a gas receiving disc (202), a plug-in groove (207) matched with the plug-in plate (203) is arranged in the gas receiving disc (202), and a plug-in pressing plate (208) matched with the plug-in air bag (204) is arranged in the plug-in groove (207);
the plug-in sliding plate (209) is connected in the plug-in groove (207) in a sliding way, one end of the plug-in sliding plate (209) is fixedly connected with the extrusion spring (2092), and the other end of the extrusion spring (2092) is fixedly connected to the air receiving disc (202).
6. The environment-friendly plasma chemical vapor deposition device for diamond production according to claim 5, wherein an extrusion air bag (2091) is arranged in the inserting groove (207), and an extrusion connecting pipe (2093) is communicated with the extrusion air bag (2091);
an inflation ring groove (7) is formed in the driving rotating shaft (6), an inflation tube (701) communicated with the clamping rubber bulge (901) is fixedly connected to the sliding clamping rod (9), the other end of the inflation tube (701) is communicated with the inflation ring groove (7), and the extrusion connecting tube (2093) penetrates through the cover frame (10) and is communicated with the inflation ring groove (7).
7. The environment-friendly plasma chemical vapor deposition device for diamond production according to claim 1, wherein the lower end of the reaction furnace (1) is fixedly connected with an exhaust pipe (103).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210781970.4A CN115161622B (en) | 2022-07-05 | 2022-07-05 | Environment-friendly plasma chemical vapor deposition equipment for diamond production |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210781970.4A CN115161622B (en) | 2022-07-05 | 2022-07-05 | Environment-friendly plasma chemical vapor deposition equipment for diamond production |
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| CN115161622A CN115161622A (en) | 2022-10-11 |
| CN115161622B true CN115161622B (en) | 2023-09-05 |
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| CN115595662B (en) * | 2022-11-01 | 2023-11-14 | 江苏汉印机电科技股份有限公司 | Gas supply device of silicon carbide epitaxial chemical vapor deposition system |
| CN115852342B (en) * | 2023-03-02 | 2023-05-02 | 山西方维晟智能科技有限公司 | Diamond vapor deposition device |
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| US4838983A (en) * | 1986-07-03 | 1989-06-13 | Emcore, Inc. | Gas treatment apparatus and method |
| US6656284B1 (en) * | 2002-06-28 | 2003-12-02 | Jusung Engineering Co., Ltd. | Semiconductor device manufacturing apparatus having rotatable gas injector and thin film deposition method using the same |
| DE102008010041A1 (en) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Layer deposition apparatus, e.g. for epitaxial deposition of compound semiconductor layers, has segmented process gas enclosure in which substrate is moved relative to partition |
| CN108546928A (en) * | 2018-06-29 | 2018-09-18 | 中国建筑材料科学研究总院有限公司 | Chemical vapor deposition prepares the device of full depositing silicon silicon coating |
| CN113430499A (en) * | 2021-06-18 | 2021-09-24 | 湖南良诚新材料科技有限公司 | Equipment for microwave plasma vapor deposition of diamond |
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2022
- 2022-07-05 CN CN202210781970.4A patent/CN115161622B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4838983A (en) * | 1986-07-03 | 1989-06-13 | Emcore, Inc. | Gas treatment apparatus and method |
| US6656284B1 (en) * | 2002-06-28 | 2003-12-02 | Jusung Engineering Co., Ltd. | Semiconductor device manufacturing apparatus having rotatable gas injector and thin film deposition method using the same |
| DE102008010041A1 (en) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Layer deposition apparatus, e.g. for epitaxial deposition of compound semiconductor layers, has segmented process gas enclosure in which substrate is moved relative to partition |
| CN108546928A (en) * | 2018-06-29 | 2018-09-18 | 中国建筑材料科学研究总院有限公司 | Chemical vapor deposition prepares the device of full depositing silicon silicon coating |
| CN113430499A (en) * | 2021-06-18 | 2021-09-24 | 湖南良诚新材料科技有限公司 | Equipment for microwave plasma vapor deposition of diamond |
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| CN115161622A (en) | 2022-10-11 |
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