CN115155417A - Gas mixing device of semiconductor process equipment and semiconductor process equipment - Google Patents

Gas mixing device of semiconductor process equipment and semiconductor process equipment Download PDF

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Publication number
CN115155417A
CN115155417A CN202210769186.1A CN202210769186A CN115155417A CN 115155417 A CN115155417 A CN 115155417A CN 202210769186 A CN202210769186 A CN 202210769186A CN 115155417 A CN115155417 A CN 115155417A
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gas
gas mixing
cavity
chamber
mixing cavity
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CN115155417B (en
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吴浩鹏
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F33/00—Other mixers; Mixing plants; Combinations of mixers
    • B01F33/80—Mixing plants; Combinations of mixers
    • B01F33/82—Combinations of dissimilar mixers
    • B01F33/821—Combinations of dissimilar mixers with consecutive receptacles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B01F23/19—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F2101/00—Mixing characterised by the nature of the mixed materials or by the application field
    • B01F2101/58—Mixing semiconducting materials, e.g. during semiconductor or wafer manufacturing processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

The invention relates to a gas mixing device of semiconductor process equipment, which comprises: the cavity is provided with a second gas inlet, a gas outlet and a plurality of first gas inlets; a first gas mixing cavity and a second gas mixing cavity which are communicated with each other are arranged in the cavity, a first gas inlet is communicated with the first gas mixing cavity, a second gas inlet is communicated with the second gas mixing cavity, and a gas outlet is communicated with the second gas mixing cavity and used for outputting mixed gas formed after the process gas and the carrier gas are mixed; the flow equalizing plate is provided with a plurality of flow equalizing holes and is arranged between the first gas mixing cavity and the second gas mixing cavity; and the stirring assembly is rotatably arranged in the first gas mixing cavity and the second gas mixing cavity. The device can obtain the mist that has higher homogeneity, and the mist lets in reaction chamber under the condition of effective mixing, is favorable to improving the homogeneity of the reaction gas concentration of reaction chamber inside lining bottom surface.

Description

Gas mixing device of semiconductor process equipment and semiconductor process equipment
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a gas mixing device of semiconductor process equipment and the semiconductor process equipment.
Background
A CVD (chemical vapor deposition) silicon epitaxial apparatus is a device for growing a silicon film on the surface of a silicon substrate or the like by using a CVD technique. A general implementation of silicon epitaxy is: and controlling the process gas to flow through the heated substrate, wherein the process gas generates a chemical reaction on the surface of the substrate to generate silicon, and further a layer of silicon simple substance film is formed on the surface of the substrate.
The key point of the CVD epitaxial process lies in the control of a temperature field and a gas flow field; the process gas is used as a reaction medium, and the concentration and uniformity of the process gas have a particularly remarkable influence on the reaction effect. Generally, the CVD reaction chamber contains multiple gases, one of which is the primary gas, typically H, as the carrier gas 2 The function of transporting and diluting the process gas is achieved; in addition, two or more gases are used as process gases, and the concentration and uniformity of the process gases passing through the surface of the substrate affect the reaction efficiency, which in turn affects the uniformity of the epitaxial film. Therefore, it is desirable that the process gas and carrier gas are effectively mixed before entering the reaction chamber, become a uniform medium, and then enter the reaction chamber.
Fig. 1 shows a schematic view of a gas mixing process according to the prior art. As shown in FIG. 1, the process gases A and B are introduced into the carrier gas (e.g., H) through their respective conduits 2 ) After the line, mixing was carried out in the carrier gas line. Because the space in the gas carrying pipeline is limited, the gas mixing efficiency is lower; in addition, due to the different pressures of the different process gases and the different locations of the injected carrier gas lines, it is not possible to ensure that the concentration of the process gases in the carrier gas lines is completely uniform before entering the reaction chamber. The process gas is introduced into the reaction chamber under the condition that effective mixing cannot be realized, and when the process gas passes through the surface of the substrate in the reaction chamber, the concentration of the process gas on the surface of the substrate is inconsistent, the reaction efficiency of the surface of the substrate is inconsistent, and the uniformity of the epitaxial film is reduced.
Disclosure of Invention
The invention aims to provide a gas mixing device of semiconductor processing equipment and the semiconductor processing equipment comprising the gas mixing device, so as to overcome the problem that a plurality of process gases cannot be effectively mixed before entering a reaction chamber.
In order to achieve the above object, the present invention provides a gas mixing apparatus of a semiconductor process apparatus, comprising:
the gas source comprises a cavity, a gas inlet, a gas outlet and a plurality of first gas inlets, wherein the cavity is provided with the second gas inlet, the gas outlet and the plurality of first gas inlets; a first gas mixing cavity and a second gas mixing cavity which are communicated with each other are arranged in the cavity, the first gas inlet is communicated with the first gas mixing cavity and is used for introducing process gas into the first gas mixing cavity, the second gas inlet is communicated with the second gas mixing cavity and is used for introducing carrier gas into the second gas mixing cavity, and the gas outlet is communicated with the second gas mixing cavity and is used for outputting mixed gas formed by mixing the process gas and the carrier gas;
the flow equalizing plate is provided with a plurality of flow equalizing holes and is arranged between the first gas mixing cavity and the second gas mixing cavity;
an agitation assembly rotatably disposed in the first gas mixing chamber and the second gas mixing chamber.
Preferably, the gas mixing device still includes the even flow chamber, the even flow chamber is located first gas mixing chamber with between the second gas mixing chamber, the even flow board is located the even flow intracavity, and will the even flow chamber is separated for the first space and the second space of mutual intercommunication, first space with the second space respectively with first gas mixing chamber with the second gas mixing chamber intercommunication.
Preferably, along a direction perpendicular to the center lines of the first gas mixing cavity and the second gas mixing cavity, the cross-sectional areas of the first gas mixing cavity and the second gas mixing cavity are the same and are both S2, and the cross-sectional area S1 of the uniform flow cavity is larger than the cross-sectional area S2; and/or
The height of the first gas mixing cavity is the same as that of the second gas mixing cavity, the first gas mixing cavity and the second gas mixing cavity are both h2, and the height h1 of the uniform flow cavity is larger than or equal to the height h2.
Preferably, the sectional area S1 is 1.3 to 1.7 times the sectional area S2; and/or
The height h1 is 1 to 1.5 times the height h2.
Preferably, the stirring assembly comprises a rotating shaft, a plurality of first fan blades arranged in the first gas mixing cavity and a plurality of second fan blades arranged in the second gas mixing cavity, one end of the rotating shaft is connected with the plurality of first fan blades, and the other end of the rotating shaft is connected with the plurality of second fan blades;
the second fan blades are driven by the carrier gas flowing into the second gas mixing cavity from the second gas inlet to rotate, so that the rotating shaft and the first fan blades are driven to rotate.
Preferably, the rotating shaft penetrates through the flow homogenizing plate and is connected to the flow homogenizing plate through a bearing;
the rotating shaft is perpendicular to the uniform flow plate.
Preferably, the pressure in the first gas mixing cavity is a first pressure, and the pressure in the second gas mixing cavity is a second pressure; the second pressure is less than the first pressure.
Preferably, the plurality of first gas inlets are uniformly distributed on the side wall of the cavity and located on one side of the first gas mixing cavity far away from the uniform flow plate.
Preferably, the gas outlet and the second gas inlet are symmetrically arranged on the side wall of the cavity and located on one side of the second gas mixing cavity far away from the uniform flow plate.
The invention also provides semiconductor process equipment which comprises a reaction chamber, an air inlet pipeline and the gas mixing device, wherein the gas mixing device is arranged on the air inlet pipeline, and the reaction chamber is communicated with a gas outlet of the gas mixing device.
The invention has the beneficial effects that: the multiple process gases are firstly mixed in the first gas mixing cavity by the stirring component, then blocked by the uniform flow plate, the gases generate turbulent flow, are further uniformly mixed, and are finally mixed with the carrier gas in the second gas mixing cavity by the stirring component, so that the mixed gas with higher uniformity is obtained. The mixed gas is introduced into the reaction chamber under the condition of effective mixing, which is beneficial to improving the uniformity of the concentration of the process gas on the bottom surface of the lining of the reaction chamber.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings, wherein like reference numerals generally represent like parts in the exemplary embodiments of the present invention.
Fig. 1 shows a schematic view of a gas mixing method according to the prior art.
Fig. 2 shows a schematic structural diagram of a gas mixing device of a semiconductor processing apparatus according to an embodiment of the present invention.
Fig. 3 shows a block diagram of an uniform flow plate of a gas mixing device of a semiconductor processing apparatus according to an embodiment of the present invention.
FIG. 4 shows a top view of a gas mixing arrangement of a semiconductor processing apparatus according to one embodiment of the present invention.
Description of the reference numerals
1 a first gas mixing chamber; 2 a second gas mixing chamber; 3, a flow homogenizing cavity; 4, a flow homogenizing plate; 41 flow homogenizing holes; 5 a first fan blade; 6 a second fan blade; 7, a rotating shaft; 8, a bearing; 9 a first gas inlet; 10 a second gas inlet; 11 gas outlet.
Detailed Description
Preferred embodiments of the present invention will be described in more detail below. While the following describes preferred embodiments of the present invention, it should be understood that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
In the description of the present invention, the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; may be mechanically coupled, may be directly coupled, or may be indirectly coupled through an intermediary. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The embodiment of the invention provides a gas mixing device of semiconductor process equipment, which comprises:
the cavity is provided with a second gas inlet, a gas outlet and a plurality of first gas inlets; a first gas mixing cavity and a second gas mixing cavity which are communicated with each other are arranged in the cavity, a first gas inlet is communicated with the first gas mixing cavity and used for introducing process gas into the first gas mixing cavity, a second gas inlet is communicated with the second gas mixing cavity and used for introducing carrier gas into the second gas mixing cavity, and a gas outlet is communicated with the second gas mixing cavity and used for outputting mixed gas formed by mixing the process gas and the carrier gas;
the flow equalizing plate is provided with a plurality of flow equalizing holes and is arranged between the first gas mixing cavity and the second gas mixing cavity;
and the stirring assembly is rotatably arranged in the first gas mixing cavity and the second gas mixing cavity.
The gas mixing device is used for introducing mixed gas of process gas and carrier gas into the reaction chamber. Each process gas enters a first gas mixing cavity through a first gas inlet respectively, and is mixed in the first gas mixing cavity through a stirring assembly; and the carrier gas flowing at high speed enters the second gas mixing cavity through the second gas inlet, and the carrier gas flowing at high speed causes the pressure in the second gas mixing cavity to be reduced and is lower than the pressure in the first gas mixing cavity, so that power flowing into the second gas mixing cavity is provided for the process gas in the first gas mixing cavity. When the process gas flows from the first gas mixing cavity to the second gas mixing cavity through the flow equalizing plate, the process gas is blocked by the flow equalizing plate to form turbulent flow, so that the mixing uniformity of the process gas is improved. The process gas and the carrier gas flowing through the uniform flow plate are fully mixed in the second gas mixing cavity by the stirring component. After being mixed evenly, the mixed gas enters a reaction chamber with the pressure far lower than that of the mixer through a gas outlet.
In the embodiment of the invention, a plurality of process gases are firstly mixed in the first gas mixing cavity, then are further uniformly mixed by the uniform flow plate, and are finally mixed with the carrier gas in the second gas mixing cavity, so that the mixed gas with higher uniformity can be obtained. The mixed gas is introduced into the reaction chamber under the condition of effective mixing, which is beneficial to improving the uniformity of the concentration of the process gas on the surface of the substrate.
Fig. 2 is a schematic structural view showing a gas mixing device of a semiconductor process apparatus according to an embodiment of the present invention, fig. 3 is a structural view showing a flow equalizing plate of a gas mixing device of a semiconductor process apparatus according to an embodiment of the present invention, and fig. 4 is a plan view showing a gas mixing device of a semiconductor process apparatus according to an embodiment of the present invention.
Referring to fig. 2 to 4, the gas mixing apparatus of the semiconductor process apparatus includes:
the gas source comprises a cavity, wherein a second gas inlet 10, a gas outlet 11 and a plurality of first gas inlets 9 are formed in the cavity; a first gas mixing cavity 1 and a second gas mixing cavity 2 which are communicated with each other are arranged in the cavity, a first gas inlet 9 is communicated with the first gas mixing cavity 1 and is used for introducing process gas into the first gas mixing cavity 1, a second gas inlet 10 is communicated with the second gas mixing cavity 2 and is used for introducing carrier gas into the second gas mixing cavity 2, and a gas outlet 11 is communicated with the second gas mixing cavity 2 and is used for outputting mixed gas formed by mixing the process gas and the carrier gas;
the uniform flow plate 4 is provided with a plurality of uniform flow holes 41, and the uniform flow plate 4 is arranged between the first gas mixing cavity 1 and the second gas mixing cavity 2;
and the stirring assemblies are rotatably arranged in the first gas mixing cavity 1 and the second gas mixing cavity 2.
In this embodiment, the gas mixing device further comprises a uniform flow chamber 3, the uniform flow chamber 3 is arranged between the first gas mixing chamber 1 and the second gas mixing chamber 2, the uniform flow plate 4 is arranged in the uniform flow chamber 3 and separates the uniform flow chamber 3 into a first space and a second space which are communicated with each other, and the first space and the second space are respectively communicated with the first gas mixing chamber 1 and the second gas mixing chamber 2.
The process gas enters the first gas mixing chamber 1 and is blocked by the uniform flow plate 4 to form turbulent flow near the uniform flow plate, so that the mixing uniformity of the process gas is improved. A flow homogenizing chamber 3 for accommodating a flow homogenizing plate 4 is arranged between the first gas mixing chamber 1 and the second gas mixing chamber 2, so that the formation of turbulent flow is facilitated. In this embodiment, the flow equalizing plate 4 extends in a direction perpendicular to the center lines of the first gas mixing chamber 1 and the second gas mixing chamber 2, a plurality of flow equalizing holes 401 are formed in the flow equalizing plate 4, and the mixed process gas flows from the first space to the second space through the plurality of flow equalizing holes 401. The plurality of uniform flow holes 401 may be uniformly distributed or distributed on the uniform flow plate 4 in other ways as actually required. Preferably, the uniform flow plate 4 is arranged in the middle of the uniform flow cavity 3, namely, at the same distance from the first gas mixing cavity 1 and the second gas mixing cavity 2.
Referring to FIG. 2, two process gases (e.g., dichlorosilane and trichlorosilane) are illustratively used in this example. The two process gases are respectively introduced into the first gas mixing chamber 1 through respective pipelines through a first gas inlet 9 arranged in the side wall of the chamber, where they are mixed by the stirring assembly. A carrier gas (e.g., hydrogen) flowing at a high speed enters the second gas mixing chamber 2 through a second gas inlet 10 arranged on the side wall of the chamber body, so that the pressure in the second gas mixing chamber 2 is reduced and is lower than the pressure in the first gas mixing chamber 1, and the process gas in the first gas mixing chamber 1 is provided with a motive force for flowing into the second gas mixing chamber 2. The mixed process gas firstly enters the first space of the uniform flow cavity 3 under the action of the power, is blocked by the uniform flow plate 4 to generate turbulence, is fully and uniformly mixed, then enters the second space and the second gas mixing cavity 2 through the uniform flow hole 401, is fully mixed with carrier gas in the second gas mixing cavity 2 by the stirring component, and finally enters the reaction chamber through the gas outlet 11.
Preferably, the sectional areas of the first gas mixing chamber 1 and the second gas mixing chamber 2 are the same and are both S2 in a direction perpendicular to the center lines of the first gas mixing chamber 1 and the second gas mixing chamber 2 (in fig. 2, the center lines of the first gas mixing chamber 1 and the second gas mixing chamber 2 are in the vertical direction), and the sectional area S1 of the uniform flow chamber 3 is larger than the sectional area S2. The heights (in the vertical direction in fig. 2) of the first gas mixing cavity 1 and the second gas mixing cavity 2 are the same and are both h2, and the height h1 of the uniform flow cavity is greater than or equal to the height h2.
Further, in order to improve the uniform flow effect of the uniform flow plate 4, the process gas can fully form turbulent flow in the uniform flow cavity 3 to be uniformly mixed, and the sectional area S1 of the uniform flow cavity 3 is set to be 1.3-1.7 times of the sectional area S2 of the first gas mixing cavity 1 and the second gas mixing cavity 2; preferably, the sectional area S1 of the uniform flow chamber 3 is set to be 1.5 times the sectional area S2 of the first gas mixing chamber 1 and the second gas mixing chamber 2.
Similarly, in order to improve the flow equalizing effect of the flow equalizing plate 4, the height h1 of the flow equalizing chamber is set to be 1 to 1.5 times the height h2 of the first gas mixing chamber 1 and the second gas mixing chamber 2, and preferably, the height h1 is set to be 1 time the height h2.
In this embodiment, the stirring assembly includes a rotating shaft 7, a plurality of first blades 5 disposed in the first gas mixing chamber 1 and a plurality of second blades 6 disposed in the second gas mixing chamber 2, one end of the rotating shaft 7 is connected to the plurality of first blades 5, and the other end is connected to the plurality of second blades 6. The carrier gas with certain pressure and flowing at high speed flows into the second gas mixing cavity 2 through the second gas inlet 10 to impact the second fan blade 6, so that the second fan blade 6 rotates at high speed in a single direction under the driving of the carrier gas; the process gas enters the first gas mixing chamber 1 from all directions through the first gas inlets 9, and a unidirectional driving force is not easily formed on the first fan blades 5, so that the plurality of first fan blades 5 are driven by the second fan blades 6 and the rotating shaft 7 to rotate. The rotating shaft 7 penetrates through the flow equalizing plate 4 and is connected to the flow equalizing plate 4 through a bearing 8. The rotating shaft 7 is perpendicular to the uniform flow plate 4.
The rotation of the first fan blade 5 is beneficial to the full mixing of the process gas in the first gas mixing cavity 1, and the rotation of the second fan blade 6 is beneficial to the full mixing of the process gas and the carrier gas in the second gas mixing cavity 2, so as to form uniform mixed gas. In addition, the rotation of the second fan blade 6 causes the gas in the second gas mixing chamber 1 to flow at a high speed, so that negative pressure is formed in the second gas mixing chamber 2, the pressure in the second gas mixing chamber 2 is further reduced, and the pressure is lower than that in the first gas mixing chamber 1, thereby providing power for the process gas in the first gas mixing chamber 1 to flow into the second gas mixing chamber 2.
In this embodiment, the plurality of first gas inlets 9 are uniformly distributed on the outer sidewall of the first gas mixing chamber 1, and are located at one end of the first gas mixing chamber 1 far away from the uniform flow plate. Therefore, the process gas has a larger mixing space and a better mixing effect.
The gas outlet 12 and the second gas inlet 10 are symmetrically disposed on the sidewall of the second gas mixing chamber 2 with respect to the center of the second gas mixing chamber 2, so as to facilitate the sufficient mixing of the carrier gas and the process gas.
The embodiment of the invention also provides semiconductor equipment which comprises a reaction chamber, an air inlet pipeline and the gas mixing device, wherein the gas mixing device is arranged on the air inlet pipeline, and the reaction chamber is communicated with a gas outlet of the gas mixing device. The mixed gas with uniform concentration formed by the gas mixing device is supplied to the reaction chamber through the gas inlet pipeline.
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.

Claims (10)

1. A gas mixing apparatus for semiconductor processing equipment, comprising:
the gas source comprises a cavity, a gas inlet, a gas outlet and a plurality of first gas inlets, wherein the cavity is provided with the second gas inlet, the gas outlet and the plurality of first gas inlets; a first gas mixing cavity and a second gas mixing cavity which are communicated with each other are arranged in the cavity, the first gas inlet is communicated with the first gas mixing cavity and is used for introducing process gas into the first gas mixing cavity, the second gas inlet is communicated with the second gas mixing cavity and is used for introducing carrier gas into the second gas mixing cavity, and the gas outlet is communicated with the second gas mixing cavity and is used for outputting mixed gas formed by mixing the process gas and the carrier gas;
the flow equalizing plate is provided with a plurality of flow equalizing holes and is arranged between the first gas mixing cavity and the second gas mixing cavity;
an agitation assembly rotatably disposed in the first gas mixing chamber and the second gas mixing chamber.
2. The gas mixing device of semiconductor processing equipment according to claim 1, further comprising a flow equalizing chamber disposed between said first gas mixing chamber and said second gas mixing chamber, said flow equalizing plate being disposed in said flow equalizing chamber and dividing said flow equalizing chamber into a first space and a second space that are in communication with each other, said first space and said second space being in communication with said first gas mixing chamber and said second gas mixing chamber, respectively.
3. The gas mixing device of semiconductor processing equipment according to claim 2, wherein the first gas mixing chamber and the second gas mixing chamber have the same cross-sectional area S2 and the cross-sectional area S1 of the flow equalizing chamber is larger than the cross-sectional area S2 in a direction perpendicular to the center line of the first gas mixing chamber and the second gas mixing chamber; and/or
The heights of the first gas mixing cavity and the second gas mixing cavity are the same and are both h2, and the height h1 of the uniform flow cavity is greater than or equal to the height h2.
4. The gas mixing apparatus of semiconductor processing equipment according to claim 3, wherein the sectional area S1 is 1.3 to 1.7 times the sectional area S2; and/or
The height h1 is 1 to 1.5 times the height h2.
5. The gas mixing apparatus of claim 1, wherein the stirring assembly comprises a shaft, a plurality of first blades disposed in the first gas mixing chamber, and a plurality of second blades disposed in the second gas mixing chamber, one end of the shaft is connected to the plurality of first blades, and the other end of the shaft is connected to the plurality of second blades;
the second fan blades are driven by the carrier gas flowing into the second gas mixing cavity from the second gas inlet to rotate, so that the rotating shaft and the first fan blades are driven to rotate.
6. The gas mixing apparatus of semiconductor processing equipment according to claim 5, wherein the rotating shaft passes through the flow homogenizing plate and is connected to the flow homogenizing plate through a bearing;
the rotating shaft is perpendicular to the flow homogenizing plate.
7. The gas mixing apparatus of semiconductor processing equipment according to claim 5, wherein the pressure in the first gas mixing chamber is a first pressure and the pressure in the second gas mixing chamber is a second pressure; the second pressure is less than the first pressure.
8. The gas mixing device of claim 1, wherein the plurality of first gas inlets are uniformly distributed on the sidewall of the chamber and located on a side of the first gas mixing chamber away from the uniform flow plate.
9. The gas mixing apparatus of claim 1, wherein the gas outlet and the second gas inlet are symmetrically disposed on a side wall of the chamber and located on a side of the second gas mixing chamber away from the uniform flow plate.
10. Semiconductor processing equipment, characterized in that it comprises a reaction chamber, a gas inlet line and a gas mixing device according to any one of claims 1-9, said gas mixing device being arranged on said gas inlet line, said reaction chamber being in communication with a gas outlet of said gas mixing device.
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