CN115125501A - Target material assembly and preparation method thereof - Google Patents
Target material assembly and preparation method thereof Download PDFInfo
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- CN115125501A CN115125501A CN202210786593.3A CN202210786593A CN115125501A CN 115125501 A CN115125501 A CN 115125501A CN 202210786593 A CN202210786593 A CN 202210786593A CN 115125501 A CN115125501 A CN 115125501A
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- chamfer
- shaped chamfer
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- 238000002360 preparation method Methods 0.000 title abstract description 12
- 239000013077 target material Substances 0.000 title description 23
- 238000004544 sputter deposition Methods 0.000 claims abstract description 29
- 238000005488 sandblasting Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 25
- 239000010936 titanium Substances 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 24
- 238000005240 physical vapour deposition Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 238000003754 machining Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a target assembly and a preparation method thereof, wherein the target assembly comprises a target and a target back plate; the target comprises a circular arc chamfer and a groove positioned above the circular arc chamfer; a sand blasting area is arranged below the circular arc-shaped chamfer, a meltallizing area is arranged above the circular arc-shaped chamfer and a groove above the circular arc-shaped chamfer, the meltallizing layer completely covers the circular arc-shaped chamfer and the groove, and the circular arc-shaped chamfer is flush with the groove after being covered; the target improves the profile and the whole size of the target, adjusts the technological parameters during preparation, and comprehensively improves the uniformity of the target, thereby reducing the probability of Arbing phenomenon during sputtering of the target and improving the yield of products.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing, and particularly relates to a target assembly and a preparation method thereof.
Background
In the process of fabricating very large scale integrated circuits, magnetron sputtering (Physical vapor Deposition, PVD) is one of the main methods for depositing various metal films on the surface of a single crystal silicon wafer to construct various electronic components and devices to achieve specific functions. The PVD is mainly based on the principle that argon atoms in a vacuum chamber are changed into argon ions moving at a high speed after collision of high-energy electrons, the argon ions bombard the surface of a target material, and the target material atoms ejected by the bombardment are deposited on the surface of a silicon wafer to form a film.
The conventionally designed Versa Ti target has the defect of high incidence rate of Particle (falling small particles) phenomenon in PVD sputtering, and can not meet the requirement of advanced process on low defect rate.
CN113897572A discloses a target assembly and a method for manufacturing the target assembly, wherein the arc-shaped chamfer at the edge of the target is subjected to sand blasting treatment, so that the arc-shaped chamfer at the edge of the target is uneven, a rough surface is provided for the subsequent adhesion of the reverse sputtering layer, and the adsorption force between the arc-shaped chamfer and the reverse sputtering layer is enhanced. Because the arc-shaped chamfer has a larger stress concentration coefficient than the plane, when the radius of the arc-shaped chamfer is smaller, the stress concentration coefficient is larger, so that the adsorption force between the arc-shaped chamfer and the reverse sputtering layer is enhanced by performing sand blasting on the arc-shaped chamfer, and the problem of larger stress concentration coefficient caused by smaller part of the arc-shaped chamfer is solved, thereby effectively avoiding stripping of the reverse sputtering layer, reducing the thickness of the edge of a non-sputtering area of the target, reducing the cost of the target and reducing the use cost of the target.
CN215365965U provides a target assembly for avoiding abnormal discharge, which comprises a target and a backing plate arranged in a stacked manner: the center of the sputtering surface of the target is provided with a conical bulge: the edge of the target is of a transition chamfer structure: the transition chamfer structure comprises at least 2 inclined planes which are connected with each other. The target material assembly prevents the anti-sputtering material from falling off in the sputtering process, avoids the occurrence of abnormal discharge phenomenon, ensures the safety of the sputtering environment and improves the coating quality.
CN111408917A discloses a machining process for LCD planar target. A machining process of an LCD plane target comprises the following steps: 1) processing two surfaces of the LCD plane target blank: 2) carrying out semi-finish milling processing on the sputtering surface of the LCD plane target: 3) rough machining the side surface of the LCD plane target: 4) and (3) performing finish machining on the sputtering surface of the LCD plane target: 5) and performing finish machining on the side face and the arc angle of the LCD plane target. According to the machining process of the LCD plane target, disclosed by the invention, through the control of the machining process in each step, the abnormal discharge phenomena of the LCD plane target such as arc and splash and the like caused by stress residue can be effectively solved, the thickness of the stress layer on the surface of the machined target is effectively controlled, and the normal use of the target in the sputtering process is ensured.
The Particle phenomenon of the traditional design is considered in the scheme, so that the design that sand blasting is carried out on the basis of the conventional Versa Ti, the special concave-convex surface is arranged, the meltallizing range of the edge outline of the special concave-convex surface is extended and the like is carried out, although the probability of the Particle phenomenon is reduced, a new Arring (namely abnormal discharge) problem is generated, a large number of defects exist on a wafer due to the Arring phenomenon, the yield is greatly reduced, and the probability of scrapping is higher. Therefore, the target design needs to be optimized to improve the yield of the Versa Ti target.
Disclosure of Invention
Aiming at the problem that the yield of the target is affected by defects generated on a wafer due to the phenomenon of Particle generation, the phenomenon of arc generation and the like of the Ti target in the prior art, the invention provides the target assembly and the preparation method thereof, the edge profile of the target is designed, and the probability of abnormal phenomena is reduced.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a target assembly comprising a target and a target backing plate; the target comprises a circular arc chamfer and a groove positioned above the circular arc chamfer; the sand blasting area is arranged below the arc-shaped chamfer, the meltallizing area is arranged above the arc-shaped chamfer and in the groove above the arc-shaped chamfer, the meltallizing layer completely covers the arc-shaped chamfer and the groove, and the arc-shaped chamfer is parallel and level to the groove after being covered.
According to the target assembly provided by the invention, the sizes of the arc chamfer and the meltallizing groove are improved on the basis of the existing target profile design, so that the meltallizing layer can completely cover the arc chamfer and the groove, and the probability of generating an arc phenomenon due to surface defects or sharp parts is eliminated as much as possible when the target assembly is used in PVD sputtering; the proper change of the size of the target material also avoids the defect of excessive Particle phenomenon caused by redundant meltallizing layer or poor combination with a sharp part.
Preferably, the depth of the grooves is 0.01 to 0.2mm, and may be, for example, 0.01mm, 0.02mm, 0.05mm, 0.08mm, 0.1mm, 0.12mm, 0.15mm, 0.18mm or 0.2mm, but is not limited to the values recited, and other values not recited within the range of values are equally applicable.
Preferably, the arc radius of the arc-shaped chamfer is 0.5-0.7mm, and may be, for example, 0.5mm, 0.52mm, 0.55mm, 0.58mm, 0.6mm, 0.62mm, 0.65mm, 0.68mm or 0.7mm, but is not limited to the values listed, and other values not listed in this range of values are equally applicable.
The invention enlarges the arc radius of the arc chamfer on the traditional target material profile from about 0.2mm to 0.5-0.7mm, and aims to ensure that the profile is uniformly transited during machining, so that the arc chamfer is more round after machining, and the probability of Arring phenomenon is reduced.
Preferably, the edge of the target is in a transition chamfer structure.
Preferably, the target has a diameter of 441.75-443.65mm, preferably 442.75-443.65mm, more preferably 443.25-443.65mm, and may be, for example, 441.75mm, 442mm, 442.25mm, 442.5mm, 442.65mm, 442.75mm, 442.9mm, 443mm, 443.1mm, 443.25mm, 443.5mm or 443.65mm, but is not limited to the values listed, and other values not listed in this range are also applicable.
The invention adjusts the diameter of the traditional target, preferably reduces the diameter of the target by 0.01-0.2mm, and aims to increase the distance between the target and main parts in a PVD machine chamber and reduce the probability of Arcing caused by too close distance between the target and the main parts.
Preferably, the material of the target comprises titanium.
In a second aspect, the present invention further provides a method for preparing the target assembly according to the first aspect, the method comprising the following steps:
combining a bonding surface of a target with a target back plate, wherein the edge of a sputtering surface of the target is provided with an arc-shaped chamfer and a groove positioned above the arc-shaped chamfer; and carrying out meltallizing treatment on the meltallizing zone to form a meltallizing layer, wherein the arc-shaped chamfer angle is flush with the groove.
According to the preparation method of the target assembly, provided by the invention, on the premise of ensuring that the groove and the arc chamfer are completely covered, the parameters of the spray process are further adjusted, so that the uniformity after spray is improved, and the probability of the arc phenomenon is reduced.
Preferably, the position close to the joint and the position close to the joint of the target back plate are subjected to sand blasting treatment to form a sand blasting area.
Preferably, the current in the meltblowing process is 240-260A, such as 240A, 245A, 250A, 255A, or 260A, but is not limited to the recited values, and other values not recited within the range are equally applicable.
Preferably, the voltage in the meltblowing process is 34.5-35.5V, for example 34.5V, 34.8V, 35V, 35.2V or 35.5V, but is not limited to the values recited, and other values not recited within the range of values are equally applicable.
Preferably, the jet stream intensity in the meltblowing process is 35 to 45kPa, and may be, for example, 35kPa, 38kPa, 40kPa, 42kPa, or 45kPa, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the thickness of the meltblown layer is 0.01 to 0.2mm, and may be, for example, 0.01mm, 0.02mm, 0.05mm, 0.08mm, 0.1mm, 0.12mm, 0.15mm, 0.18mm or 0.2mm, but is not limited to the recited values, and other values not recited within the range of values are equally applicable.
The invention shortens the groove depth before the meltallizing, controls the meltallizing thickness to be 0.01-0.2mm, and uniformly covers the groove, so that the circular chamfer at the meltallizing edge disappears after being covered, and the arc phenomenon is fundamentally eliminated.
As a preferred technical solution of the present invention, the preparation method comprises the steps of:
combining a bonding surface of a target with a target back plate, wherein the edge of a sputtering surface of the target is provided with an arc-shaped chamfer and a groove positioned above the arc-shaped chamfer; and carrying out the meltallizing treatment on the meltallizing zone with the current of 240-260A, the voltage of 34.5-35.5V and the jet airflow strength of 35-45kPa to form a meltallizing layer with the thickness of 0.1-0.2mm, wherein the circular arc chamfer disappears after being covered.
Compared with the prior art, the invention has the beneficial effects that:
(1) according to the target assembly provided by the invention, the condition that the meltallizing layer of the traditional structure completely covers the arc-shaped chamfer and the groove is prolonged, so that the sharp R angle at the edge is uniformly covered and hidden, and the problem that the Arcing probability of a Ti target at the edge is too high is remarkably reduced;
(2) according to the target assembly provided by the invention, the size of the target is adjusted, the high Arring probability caused by too close distance between the target and a PVD part is reduced, and the Arring probability is reduced to 0 from 50% of that in the prior art;
(3) according to the preparation method of the target assembly, provided by the invention, parameters of a fusion injection process are adjusted, so that the uniformity after fusion injection is improved.
Drawings
Fig. 1 is a schematic cross-sectional view of an edge profile of a target assembly prior to being sintered according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view of an edge profile of a target assembly after meltdown according to an embodiment of the present invention.
FIG. 3 is a schematic diagram of a portion of a PVD tool with an enlarged target assembly according to an embodiment of the invention.
Fig. 4 is an SEM schematic view and a partial enlarged view of a target assembly provided in embodiment 1 of the present invention.
Fig. 5 is a cross-sectional view of a target assembly provided in embodiment 1 of the present invention.
Fig. 6 is a schematic cross-sectional view of an edge profile of a target assembly provided in comparative example 1 of the present invention after meltdown.
Fig. 7 is an SEM schematic view and a partially enlarged view of a target assembly provided in comparative example 1 of the present invention.
Fig. 8 is a cross-sectional view of a target assembly according to comparative example 1 of the present invention.
Wherein, 1, a target material; 2. a target backing plate; 3. arc chamfering; 4. a groove; 5. a sand blasting area; 6. a meltdown zone; 7. and (4) a spray coating layer.
Detailed Description
For the purpose of facilitating an understanding of the present invention, the present invention will now be described by way of examples. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
It is to be understood that in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be taken as limiting the present invention. It should be noted that, in the description of the present invention, unless otherwise explicitly specified or limited, the terms "disposed," "connected" and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
In one embodiment, the present invention provides a target assembly, as shown in fig. 1, comprising a target 1 and a target backing plate 2 prior to meltblowing; the target comprises an arc-shaped chamfer 3 with the arc radius of 0.5-0.7mm and a groove 4 which is positioned above the arc-shaped chamfer and has the depth of 0.01-0.2 mm; a sand blasting area 5 is arranged below the circular arc-shaped chamfer 3, a meltdown area 6 is arranged above the circular arc-shaped chamfer 3 and in a groove above the circular arc-shaped chamfer 3, as shown in fig. 2, after meltdown, a meltdown layer 7 completely covers the circular arc-shaped chamfer 3 and the groove 4, and the circular arc-shaped chamfer 3 is flush with the groove 4 after being covered; the target material comprises titanium, the edge of the target material is in a transition chamfer structure, the diameter is 441.75-443.65mm, preferably 442.75-443.65mm, and further preferably 443.25-443.65 mm. After the target assembly provided by the invention is processed, PVD sputtering is carried out, a schematic diagram of a local part in a PVD machine is shown in FIG. 3, the left side of FIG. 3 is the position of the target assembly in the machine in the sputtering process, and the right side of FIG. 3 is an enlarged structural schematic diagram of the target assembly.
In another embodiment, the present invention provides a method for preparing a target assembly as described above, comprising the steps of:
combining a bonding surface of a target with a target back plate, wherein the edge of a sputtering surface of the target is provided with an arc-shaped chamfer and a groove positioned above the arc-shaped chamfer; and carrying out the meltallizing treatment on the meltallizing zone at the current of 240-260A, the voltage of 34.5-35.5V and the jet gas flow intensity of 35-45kPa to form a meltallizing layer with the thickness of 0.1-0.2mm, wherein the circular arc chamfer disappears after being covered.
It is understood that processes or substitutions and variations of conventional data provided by embodiments of the present invention are within the scope and disclosure of the present invention.
Example 1
The present embodiment provides a target assembly, which includes a target and a target backing plate; the target comprises an arc-shaped chamfer with the arc radius of 0.6mm and a groove which is positioned above the arc-shaped chamfer and has the depth of 0.15 mm; a sand blasting area is arranged below the circular arc-shaped chamfer, a meltallizing area is arranged above the circular arc-shaped chamfer and a groove above the circular arc-shaped chamfer, the meltallizing layer completely covers the circular arc-shaped chamfer and the groove, and the circular arc-shaped chamfer is flush with the groove after being covered; the target material comprises titanium, the edge of the target material is of a transition chamfer structure, and the diameter of the target material is 443.25 mm.
The embodiment also provides a method for preparing the target assembly, which includes the following steps:
combining a bonding surface of a target with a target back plate, wherein the edge of a sputtering surface of the target is provided with an arc-shaped chamfer and a groove positioned above the arc-shaped chamfer; and carrying out the meltallizing treatment on the meltallizing zone at the current of 250A, the voltage of 35V and the jet airflow strength of 40kPa to form a meltallizing layer with the thickness of 0.1-0.2mm, wherein the circular arc chamfer disappears after being covered.
As shown in fig. 4, fig. 4 is an SEM image and a partial enlarged view of the target assembly provided in embodiment 1 after PVD sputtering, it can be seen that the SEM image of the target assembly has a smooth profile and no visible defects, and no trace of arc is found in the SEM partial enlarged view, which reflects that uniformity of the melting boundary is improved, and no other abnormal phenomenon occurs on the surface; as shown in fig. 5, fig. 5 is a physical diagram of the target assembly in example 1, and it can be seen that the arc-shaped chamfers of the meltalling edge are rounded and transitional, the meltalling layer 7 completely covers the arc-shaped chamfers (covered in the diagram), and the uniformity is obviously improved; the target material design of the invention is proved to improve the uniformity and obviously reduce the probability of the Arcing phenomenon.
In the target assembly obtained in this embodiment, the probability of the arc phenomenon is 0.
Example 2
The present embodiment provides a target assembly, which includes a target and a target backing plate; the target comprises an arc-shaped chamfer with the arc radius of 0.5mm and a groove which is positioned above the arc-shaped chamfer and has the depth of 0.1 mm; a sand blasting area is arranged below the circular arc-shaped chamfer, a meltallizing area is arranged above the circular arc-shaped chamfer and a groove above the circular arc-shaped chamfer, the meltallizing layer completely covers the circular arc-shaped chamfer and the groove, and the circular arc-shaped chamfer is flush with the groove after being covered; the target material comprises titanium, the edge of the target material is of a transition chamfer structure, and the diameter of the target material is 441.75 mm.
The embodiment also provides a method for preparing the target assembly, which includes the following steps:
combining a bonding surface of a target with a target back plate, wherein the edge of a sputtering surface of the target is provided with an arc-shaped chamfer and a groove positioned above the arc-shaped chamfer; and carrying out the meltallizing treatment on the meltallizing zone at the current of 240A, the voltage of 34.5V and the jet air flow intensity of 35kPa to form a meltallizing layer with the thickness of 0.1-0.2mm, wherein the circular arc chamfer disappears after being covered.
In the target assembly obtained in this embodiment, the probability of the arc phenomenon is 0.
Example 3
The present embodiment provides a target assembly, which includes a target and a target backing plate; the target comprises an arc-shaped chamfer with the arc radius of 0.7mm and a groove which is positioned above the arc-shaped chamfer and has the depth of 0.2 mm; a sand blasting area is arranged below the circular arc-shaped chamfer, a meltallizing area is arranged above the circular arc-shaped chamfer and a groove above the circular arc-shaped chamfer, the meltallizing layer completely covers the circular arc-shaped chamfer and the groove, and the circular arc-shaped chamfer is flush with the groove after being covered; the target material comprises titanium, the edge of the target material is of a transition chamfer structure, and the diameter of the target material is 443.65 mm.
The embodiment also provides a method for preparing the target assembly, which includes the following steps:
combining a bonding surface of a target with a target back plate, wherein the edge of a sputtering surface of the target is provided with an arc-shaped chamfer and a groove positioned above the arc-shaped chamfer; and carrying out the meltallizing treatment on the meltallizing zone at the current of 260A, the voltage of 35.5V and the jet air flow intensity of 45kPa to form a meltallizing layer with the thickness of 0.1-0.2mm, wherein the circular arc chamfer disappears after being covered.
In the target assembly obtained in this embodiment, the probability of the arc phenomenon is 0.
Example 4
This example provides a target assembly that differs from example 1 only in that the arc radius of the arc-shaped chamfer before meltblowing is 0.2 mm.
The target assembly obtained in this example had an arc phenomenon probability of 0, but a Particle phenomenon occurred, with a probability of 15.9%.
Example 5
This example provides a target assembly that differs from example 1 only in that the depth of the grooves prior to meltblowing was 0.35 mm.
The probability of the arc phenomenon of the target assembly obtained in this example was 17.1%.
Example 6
This example provides a target assembly which differs from example 1 only in that the target diameter is 443.75 mm.
The probability of the arc phenomenon of the target assembly obtained in this example was 2.3%.
Comparative example 1
The present comparative example provides a target assembly having a structure as shown in fig. 6, which is different from that of example 1 only in that the depth of the groove before meltallizing is 0.35mm, and the arc radius of the arc-shaped chamfer is 0.2 mm.
The target assembly comprises a target 1 and a target back plate 2; before the meltallizing, as shown in fig. 6, the target comprises a circular arc chamfer 3 with a circular arc radius of 0.2mm and a groove 4 which is positioned above the circular arc chamfer 3 and has a depth of 0.35 mm; a sand blasting area 5 is arranged below the circular arc-shaped chamfer 3, a meltdown area 6 is arranged above the circular arc-shaped chamfer 3 and in the groove above the circular arc-shaped chamfer 3, and after meltdown, as shown in fig. 8, the meltdown layer does not completely cover the circular arc-shaped chamfer 3, so that an obvious sharp-angled structure can be seen in the drawing.
The target assembly provided by the comparative example has a high probability of generating the arc phenomenon because the target assembly is not designed to improve the uniformity, as shown in fig. 7, fig. 7 is an SEM image and a partial enlarged image of the target assembly provided by the comparative example 1 after being subjected to PVD sputtering, and it can be seen that the SEM image of the target assembly has an obvious ridge-like undulation on the contour, which is a three-dimensional structure of an arc chamfer on a cross-sectional view, and the SEM partial enlarged image reflects that an obvious arc trace exists near the arc chamfer on the meltalligator boundary, which proves that the target contour has more uneven portions when the sizes of the groove and the arc chamfer are not adjusted, so that the arc phenomenon often occurs.
The target assembly obtained by the comparative example has a probability of the arc phenomenon of 50%.
The probability of the arc phenomenon in the target assemblies of examples 1 to 6 and comparative example 1 is obtained by dividing the number of targets where the arc phenomenon occurs by the total number of targets produced, and the machine will warn when the arc phenomenon occurs and will also observe traces of the arc phenomenon when the products are detected.
(1) It can be seen from the comprehensive examples 1-3 that the target assembly and the preparation method thereof provided by the invention can prevent the occurrence of the arc phenomenon under the optimal conditions, and the probability of the arc phenomenon is 0;
(2) as can be seen by combining examples 1 and 4, the arc radius of the arc-shaped chamfer before the meltalling of example 1 is 0.6mm, while the arc radius of the arc-shaped chamfer before the meltalling of example 4 is 0.2 mm; in example 4, although the arc phenomenon is eliminated, Particle problem is generated due to the excessively thick meltallizing layer; therefore, the arc radius of the arc chamfer needs to be in a proper range before the target material is subjected to melt injection, so that better product yield can be obtained;
(3) combining example 1 with example 5, it can be seen that the depth of the pre-meltblowing groove of example 1 is 0.35mm, while the depth of the pre-meltblowing groove of example 5 is 0.35 mm; the over-depth of the grooves in example 5 resulted in incomplete coverage, and the probability of the arching phenomenon, although reduced, could not be completely eradicated; therefore, the depth of the groove needs to be in a proper range before the target material is subjected to melt-injection, so that the Arcing phenomenon can be avoided;
(4) it can be seen from a combination of examples 1 and 6 that the target diameter of example 1 is 443.25mm, while the target diameter of example 6 is 443.75 mm; the diameter of the target in example 6 is the same as that of the existing design, and although the probability of the arc phenomenon is reduced, the arc phenomenon still occurs at a certain probability due to the close distance with the internal components of the sputtering chamber; therefore, the diameter of the target material is reduced to a certain range, which is beneficial to reducing the Arcing probability;
(5) it can be seen from the combination of the embodiment 1 and the comparative example 1 that the embodiment 1 simultaneously redesigns the shape of the existing target, namely, the depth of the groove before meltalling, the arc radius of the arc chamfer and the diameter of the target are preferably designed, so that the meltalling layer can cover the sharp corner structure of the target with proper thickness, thereby avoiding the occurrence of arc phenomenon and Particle phenomenon, while the target of the comparative example 1 has more uneven parts, so that the occurrence probability of the arc phenomenon is as high as 50%; thus, the present invention solves the Arcing problem of Versa Ti target.
In conclusion, the target assembly and the preparation method provided by the invention improve the profile and the overall size of the target, adjust the technological parameters during preparation, and comprehensively improve the uniformity of the target, thereby reducing the probability of generating the arc phenomenon during sputtering of the target and improving the yield of products.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (10)
1. A target assembly is characterized by comprising a target and a target back plate; the target comprises a circular arc chamfer and a groove positioned above the circular arc chamfer; the sand blasting area is arranged below the arc-shaped chamfer, the meltallizing area is arranged above the arc-shaped chamfer and in the groove above the arc-shaped chamfer, the meltallizing layer completely covers the arc-shaped chamfer and the groove, and the arc-shaped chamfer is parallel and level to the groove after being covered.
2. The target assembly of claim 1, wherein the grooves have a depth of 0.01-0.2 mm.
3. The target assembly of claim 1 or 2, wherein the arc radius of the arc-shaped chamfer is 0.5-0.7 mm.
4. The target assembly of any of claims 1-3, wherein the edges of the target are in a transition chamfer configuration.
5. The target assembly according to any of claims 1 to 4, wherein the target has a diameter of 441.75-443.65mm, preferably 442.75-443.65mm, more preferably 443.25-443.65 mm.
6. The target assembly of any of claims 1-5, wherein the material of the target comprises titanium.
7. A method for preparing the target assembly according to any one of claims 1 to 6, wherein the method comprises the steps of:
combining a bonding surface of a target with a target back plate, wherein the edge of a sputtering surface of the target is provided with an arc-shaped chamfer and a groove positioned above the arc-shaped chamfer; and carrying out spray treatment on the spray zone to form a spray layer, wherein the arc-shaped chamfer angle is parallel and level to the groove.
8. The method according to claim 7, wherein the joint and the target backing plate are sandblasted to form a sandblasted area.
9. The method as claimed in claim 7 or 8, wherein the current in the meltblowing process is 240-260A;
preferably, the voltage in the meltallizing treatment is 34.5-35.5V;
preferably, the intensity of the jet air flow in the meltallizing treatment is 35-45 kPa;
preferably, the thickness of the meltblown layer is 0.01 to 0.2 mm.
10. The method according to any one of claims 7 to 9, characterized by comprising the steps of:
combining a bonding surface of a target with a target back plate, wherein the edge of a sputtering surface of the target is provided with an arc-shaped chamfer and a groove positioned above the arc-shaped chamfer; and carrying out the meltallizing treatment on the meltallizing zone at the current of 240-260A, the voltage of 34.5-35.5V and the jet gas flow intensity of 35-45kPa to form a meltallizing layer with the thickness of 0.1-0.2mm, wherein the circular arc chamfer disappears after being covered.
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| JP2010274526A (en) * | 2009-05-28 | 2010-12-09 | Seiko Epson Corp | Head and device for ejecting liquid |
| CN104419902A (en) * | 2013-09-03 | 2015-03-18 | 宁波江丰电子材料股份有限公司 | Target treatment method |
| CN109385608A (en) * | 2017-08-08 | 2019-02-26 | 宁波江丰电子材料股份有限公司 | Target material assembly and its manufacturing method |
| CN213772195U (en) * | 2020-11-24 | 2021-07-23 | 宁波江丰电子材料股份有限公司 | Target assembly for preventing reverse sputtering object from peeling off |
| CN113897572A (en) * | 2021-10-11 | 2022-01-07 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010274526A (en) * | 2009-05-28 | 2010-12-09 | Seiko Epson Corp | Head and device for ejecting liquid |
| CN104419902A (en) * | 2013-09-03 | 2015-03-18 | 宁波江丰电子材料股份有限公司 | Target treatment method |
| CN109385608A (en) * | 2017-08-08 | 2019-02-26 | 宁波江丰电子材料股份有限公司 | Target material assembly and its manufacturing method |
| CN213772195U (en) * | 2020-11-24 | 2021-07-23 | 宁波江丰电子材料股份有限公司 | Target assembly for preventing reverse sputtering object from peeling off |
| CN113897572A (en) * | 2021-10-11 | 2022-01-07 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
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