CN115125500A

CN115125500A - Machine resetting method of ITO machine

Info

Publication number: CN115125500A
Application number: CN202210652107.9A
Authority: CN
Inventors: 洪加添; 翁晓佩; 李刚
Original assignee: Fujian Prima Optoelectronics Co Ltd
Current assignee: Fujian Prima Optoelectronics Co Ltd
Priority date: 2022-06-02
Filing date: 2022-06-09
Publication date: 2022-09-30
Anticipated expiration: 2042-06-09
Also published as: CN115125500B

Abstract

The invention discloses a resetting method of an ITO (indium tin oxide) machine table, which is characterized in that after the ITO machine table is maintained by opening a cavity, a preheating covering program is executed in the ITO machine table, in the process of executing the preheating covering program, argon flow of 90-110 sccm is introduced, and the direct current power supply power and the radio frequency power supply power during preheating covering are synchronously increased, so that the atmosphere environment of argon in a cavity can be effectively improved, and the cleanliness of a target surface and the cavity is kept. The total water temperature of the ITO machine is increased to 22 ℃ in the mass production process, the water flow of the target and the water flow of the workbench are set to be below 5L/min, high carrier mobility can be obtained in the whole mass production stage after machine resetting, effective diffusion of current is increased, and therefore the luminous efficiency is improved.

Description

Machine resetting method of ITO machine

Technical Field

The invention relates to the technical field of semiconductor electronics, in particular to a reset method of an ITO machine.

Background

An LED (light Emitting Diode) is a solid semiconductor device capable of converting electric energy into visible light. Because the ITO film has good conductivity and light transmittance, an ITO machine is usually used for growing an ITO film at the production end of an LED chip, and the luminous efficiency of the LED can be increased.

At present, the preparation of the ITO film adopts a direct current magnetron sputtering method and a corresponding ITO sputtering machine station. The growth of the ITO thin film needs to be carried out in a vacuum cavity, and the PM (equipment maintenance) of a machine table, the replacement of a lining plate in an open cavity and cleaning maintenance need to be carried out regularly (generally specified 300Run) along with the increase of the thickness of the ITO in the cavity. Because the ITO machine cavity needs to be broken in vacuum during maintenance, the ITO target and the cavity are in contact with air, and ITO has strong water absorption and can absorb moisture in the air to generate chemical reaction and change; and a new lining plate replaced during maintenance is not covered by the bottom membrane, so that the ITO target is cooled for a long time and the gas atmosphere of the cavity is changed, and long recovery time is needed to recover the atmosphere of the cavity and preheat the target after PM of the machine table every time. And the first 30Run times after maintenance can not obtain higher carrier mobility, which causes the problems of poor current expansion, influence on light extraction efficiency and the like.

Disclosure of Invention

The technical problem to be solved by the invention is as follows: the resetting method of the ITO machine can quickly reset and improve the light emitting efficiency of the chip after equipment maintenance.

In order to solve the technical problems, the invention adopts the technical scheme that:

a machine resetting method of an ITO machine table comprises the following steps:

s1, after cavity opening maintenance is carried out on the ITO machine, a preheating covering program is executed in the ITO machine, in the preheating covering program, argon gas of 90-110 sccm is continuously introduced into the cavity of the ITO machine for 9-11 minutes, a direct current power supply is set to be 390-410W, and a radio frequency power supply is set to be 590-610W;

and S2, increasing the total water temperature of the ITO machine to 22 ℃ in the mass production process, and setting the water flow of the target and the machine workbench to be below 5L/min.

The invention has the beneficial effects that: after the ITO machine is opened and maintained, a preheating covering program is executed in the ITO machine, argon gas flow of 90-110 sccm is introduced in the process of executing the preheating covering program, and direct-current power supply power and radio-frequency power supply power during preheating covering are synchronously increased, so that the atmosphere environment of argon gas in the cavity can be effectively improved, and the cleanliness of the target surface and the cavity is maintained. The total water temperature of the ITO machine table is improved to 22 ℃ in the mass production process, the water flow of the target and the water flow of the workbench are set to be below 5L/min, high carrier mobility can be obtained in the whole mass production stage after machine resetting, effective diffusion of current is increased, and therefore the luminous efficiency is improved.

Drawings

Fig. 1 is a flowchart of a recovery method for an ITO machine according to an embodiment of the present invention;

FIG. 2 is a flowchart illustrating a process of resetting an ITO bench in the prior art;

FIG. 3 is a flowchart of a recovery process of an ITO bench according to an embodiment of the present invention.

Detailed Description

In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.

Referring to fig. 1, an embodiment of the present invention provides a method for resetting an ITO machine, including:

As can be seen from the above description, the beneficial effects of the present invention are: after the ITO machine table is subjected to cavity opening maintenance, a preheating covering program is executed in the ITO machine table, argon flow of 90-110 sccm is introduced in the process of executing the preheating covering program, and direct-current power supply power and radio-frequency power supply power during preheating covering are synchronously increased, so that the argon atmosphere in the cavity can be effectively improved, and the cleanliness of a target surface and the cavity is kept. The total water temperature of the ITO machine is increased to 22 ℃ in the mass production process, the water flow of the target and the water flow of the workbench are set to be below 5L/min, high carrier mobility can be obtained in the whole mass production stage after machine resetting, effective diffusion of current is increased, and therefore the luminous efficiency is improved.

Further, in the step S1, argon gas of 100sccm is introduced into the cavity of the ITO stage for 10 minutes.

As can be seen from the above description, the introduction of 100sccm argon gas into the chamber for a period of 10 minutes can reduce the residual of the chamber gases.

Further, in the step S1, the dc power supply is set to 400W, and the rf power supply is set to 600W.

As can be seen from the above description, setting the DC power supply to 400W and the RF power supply to 600W can increase the sputtering cleaning effect on the surface of the target and the atmosphere coverage speed of the chamber.

Further, the executing the preheating covering program in the ITO machine includes:

after the ITO machine table is started, the cavity of the ITO machine table is vacuumized to 1.0E-6mbar, target preheating is carried out, and an ITO coating is loaded in the cavity of the ITO machine table.

According to the above description, after the ITO machine is opened for maintenance, the ITO machine is vacuumized and the preheating covering program is executed, so that the target can be preheated and the ITO coating can be used for covering the cavity, and the cavity atmosphere can be recovered.

Further, the step S1 is followed by:

and judging whether the thickness of the ITO coating layer after the preheating covering program meets the preset thickness or not, and if so, executing the step S2.

As can be seen from the above description, the film thickness verification of the ITO coating is performed after the preheating covering process, thereby ensuring the quality of the subsequent mass production operation.

Further, increasing the total water temperature of the ITO station to 22 ℃ comprises:

the water temperature of the target and the water temperature of the worktable of the machine are both increased to 22 ℃.

Further, in step S2, the water flow rate of the target material is 4.8L/min, and the water flow rate of the stage table is 1.0L/min.

According to the description, the heat effect and the substrate temperature of the target are changed by adjusting the total water temperature and the water flow of the target and the workbench, so that the high carrier mobility can be obtained in the whole mass production stage after the machine is reset, the resistivity of the film is reduced, the effective diffusion of current is increased, and the effective promotion of voltage and brightness is ensured.

The resetting method of the ITO machine table is suitable for resetting the ITO machine table in the preparation process of an ITO film of an LED, and is used for quickly resetting and improving the light emitting efficiency of a chip after equipment maintenance, and is explained by a specific implementation mode as follows:

example one

Referring to fig. 1, a method for resetting an ITO machine includes the steps of:

s1, after the ITO machine is maintained by opening the cavity, a preheating covering program is executed in the ITO machine, in the preheating covering program, argon gas of 90-110 sccm is continuously introduced into the cavity of the ITO machine for 9-11 minutes, a direct current power supply is set to be 390-410W, and a radio frequency power supply is set to be 590-610W.

Specifically, in step S1, 100sccm of argon gas is introduced into the cavity of the ITO stage for 10 minutes, and the dc power supply is set to 400W and the rf power supply is set to 600W.

The preheating covering procedure is to vacuumize the cavity of the ITO machine table to 1.0E-6mbar after the ITO machine table is started, preheat the target material and load the ITO coating in the cavity of the ITO machine table.

In the embodiment, the water temperature of the target and the water temperature of the machine table are both increased to 22 ℃ in the mass production process, and the water flow rate of the target is set to be 4.8L/min and the water flow rate of the machine table is set to be 1.0L/min.

Therefore, in this embodiment, after the ITO machine is opened for maintenance, the preheating covering procedure is performed in the ITO machine, and in the process of performing the preheating covering procedure, an argon flow of 100sccm is introduced, and the dc power and the rf power during the preheating covering are synchronously increased, so that the argon atmosphere in the cavity can be effectively improved, and the cleanliness of the target surface and the cavity can be maintained. And (4) verifying the film thickness of the ITO coating coated in the preheating covering program, and performing mass production when the film thickness meets the specified requirements. The total water temperature of the ITO machine is increased to 22 ℃ in the mass production process, the water flow of the target is set to be 4.8L/min, the water flow of the workbench is set to be 1.0L/min, high carrier mobility can be obtained in the whole mass production stage after machine resetting, effective diffusion of current is increased, and therefore the luminous efficiency is improved.

Example two

The difference between the embodiment and the first embodiment is that a specific ITO recovery process is provided, which specifically includes:

referring to fig. 2, in the conventional machine resetting process, an ITO machine after cavity opening maintenance needs to run a preheating covering program (Coating) 4 times, wherein each Coating needs to maintain 1 minute of 70sccm Ar, a Radio Frequency power supply (RF) 410W, a Direct Current power supply (DC) 300W, and the total duration is about 6 hours, so as to clean the surface of a target and form a film inside a cavity of the machine, thereby ensuring the cleanness of the target and the stability of the cavity atmosphere in the subsequent ITO operation, and then perform QC (Quality Control) film thickness verification, and verify whether a first furnace product meets the specified requirements according to the standard, so that the mass production operation can be performed, and the process is about 2 hours. And (5) verifying that the thickness of the ITO film is normal, and then carrying out the mass production process of the ITO film. However, in the conventional recovery process, the first 30run cannot effectively improve the unstable state of the carrier mobility in mass production.

Referring to fig. 3, in the present embodiment, the ITO recovery method includes the following steps:

(1) after the ITO machine table is opened and maintained, the ITO machine table is started to be vacuumized to 1.0E-6mbar for Coating, the target material is preheated, the ITO Coating is used for covering the cavity, the cavity atmosphere is recovered, Ar with the flow rate of 100sccm is introduced into the cavity, the numerical value is increased by 42% relative to the existing 70sccm, the ventilation time of 10 minutes is maintained, and the cavity miscellaneous gas residue is reduced. The regulated RF is increased from 410W to 600W by 46%, and the DC power supply is increased from 300W to 400W by 33%. Compared with the existing Coating preheating covering program, the method has the advantages that the sputtering cleaning effect on the surface of the target and the covering speed of the cavity atmosphere are increased, the duration is about 3 hours, the original 4-time preheating covering program is adjusted to be 1-time preheating covering program, 50% preheating covering time is saved, and multiple experiments prove that the improved Ar and power supply power has better effects on target cleaning and cavity covering.

(2) In the mass production process, the total water temperature of the machine TABLE, the target material and the TABLE (the vacuum state in the machine TABLE is used for placing the workbench of the to-be-sputtered film source) water flow are adjusted: the water temperature of the machine TABLE is increased from 21 ℃ to 22 ℃, the water temperature of the machine TABLE is increased by 4.7%, the water temperatures of the target material and the TABLE are simultaneously increased from 21 ℃ to 4.7% to 22 ℃, the water flow of the target material is reduced by 50% to 4.8L/min from 9L/min, the water flow of the TABLE is reduced by 1.0L/min from 9L/min, and the water flow is reduced by 88%; long-term experiments prove that the current expansion and brightness improvement effects under the new water flow are kept to be optimal.

In this embodiment, the chamber is filled with a large flow of Ar, and the flux is maintained for 10 minutes, so that the Ar component in the chamber atmosphere is sufficient, the chamber impurity gas residue is reduced, the lining plate and the target material which are newly replaced after maintenance are subjected to a contact reaction preferentially, the DC and RF power is improved, the sputtering rate of the target material is increased, the chamber atmosphere is quickly covered, meanwhile, the impurities remaining on the surface of the target material or the generated quality change is cleaned, the cleanliness of the target surface and the chamber is maintained, the poisoning of the target surface is reduced, and the influence on the resistivity is avoided. The total water temperature, the target material and TABLE water flow are adjusted, the heat effect and the substrate temperature of the target material are changed, so that the target material can obtain higher carrier mobility in the whole mass production stage after the machine is reset, the resistivity of the film is reduced, the effective diffusion of current is increased, and the effective improvement of voltage and brightness is ensured.

In summary, according to the ITO machine recovery method provided by the present invention, after the ITO machine recovery, a large flow Ar and high power recovery program is run, wherein the large flow Ar fills the cavity, so that the Ar component in the cavity atmosphere is sufficient, the cavity impurity gas residue is reduced, the liner plate and the target material which are newly replaced after maintenance are preferentially subjected to contact reaction, the DC and RF powers are simultaneously increased, the sputtering rate of the target material is increased, the residual impurities or the generated quality change on the surface of the target material is also cleaned while the cavity atmosphere is rapidly covered, the target surface poisoning is reduced, and the influence on the resistivity is avoided. The total water temperature is adjusted, the target material and TABLE water flow are changed, and the target material heat effect is changed, so that the target material can obtain higher carrier mobility in the whole mass production stage after the machine is reset, the resistivity of the film is reduced, the effective diffusion of current is increased, and the voltage stability and the brightness are ensured to be effectively improved.

The above description is only an embodiment of the present invention, and is not intended to limit the scope of the present invention, and all equivalent modifications made by the present invention and the contents of the accompanying drawings, which are directly or indirectly applied to the related technical fields, are included in the scope of the present invention.

Claims

1. A machine resetting method of an ITO machine is characterized by comprising the following steps:

s1, after the ITO board is maintained in an open cavity, a preheating covering program is executed in the ITO board, in the preheating covering program, argon gas of 90-110 sccm is continuously introduced into the cavity of the ITO board for 9-11 minutes, a direct current power supply is set to be 390-410W, and a radio frequency power supply is set to be 590-610W;

2. The method according to claim 1, wherein the step S1 is performed by flowing 100sccm of argon into the cavity of the ITO stage for 10 minutes.

3. The method according to claim 1, wherein the step S1 is to set the dc power supply at 400W and the rf power supply at 600W.

4. The method according to claim 1, wherein the performing the preheating overlay procedure in the ITO station comprises:

5. The method according to claim 4, wherein the step S1 is followed by:

6. The method for resetting the ITO machine of claim 1, wherein increasing the total water temperature of the ITO machine to 22 ℃ comprises:

7. The method according to claim 1, wherein in step S2, the water flow rate of the target is 4.8L/min, and the water flow rate of the stage is 1.0L/min.