CN115117284A - Preparation method of zinc oxide nanoparticle solution, preparation method of zinc oxide film, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode - Google Patents
Preparation method of zinc oxide nanoparticle solution, preparation method of zinc oxide film, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode Download PDFInfo
- Publication number
- CN115117284A CN115117284A CN202110301125.8A CN202110301125A CN115117284A CN 115117284 A CN115117284 A CN 115117284A CN 202110301125 A CN202110301125 A CN 202110301125A CN 115117284 A CN115117284 A CN 115117284A
- Authority
- CN
- China
- Prior art keywords
- zinc oxide
- preparation
- nanoparticle solution
- oxide nanoparticle
- quantum dot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
Abstract
The application relates to the technical field of nano materials, in particular to a preparation method of a zinc oxide nanoparticle solution, a preparation method of a zinc oxide film, a quantum dot light-emitting diode and a preparation method thereof. The preparation method of the zinc oxide nanoparticle solution comprises the following steps: providing an initial zinc oxide nanoparticle solution; and adding an acetate metal salt solution into the initial zinc oxide nanoparticle solution to obtain the zinc oxide nanoparticle solution. The zinc oxide nanoparticle solution prepared by the preparation method has obviously improved stability, and the surface defects of the zinc oxide nanoparticles in the solution are passivated, so that the zinc oxide nanoparticle solution is prepared into a zinc oxide film, and when the zinc oxide film is used for preparing a quantum dot light-emitting diode, the luminous efficiency of a device of the quantum dot light-emitting diode can be improved, and the service life of the device can be prolonged.
Description
Technical Field
The application belongs to the technical field of nano materials, and particularly relates to a preparation method of a zinc oxide nanoparticle solution, a preparation method of a zinc oxide film, a quantum dot light-emitting diode and a preparation method thereof.
Background
Quantum Dots (QDs) have become the research focus of the next generation of display technology due to their advantages of tunable wavelength, high color saturation, high material stability, low preparation cost, etc. With the development of the last twenty years, the external quantum efficiency of the quantum dot light emitting diode (QLED) has been improved to over 20% by 0.01%, and the quantum dot light emitting diode has been quite close to the Organic Light Emitting Diode (OLED) in terms of device efficiency. However, despite the advantages of quantum dot devices, the performance of the devices has not yet fully reached the requirements of industrialization, especially for blue QLED devices.
The structure of the device of the QLED is similar to that of the OLED at present, a sandwich structure similar to a p-i-n junction is formed by a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and the like, and the effect of high-efficiency light emission is achieved by balancing the injection of electrons and holes. Because the band gap of the blue quantum dot is wider than that of the red and green quantum dots, electron holes are more difficult to inject, the starting voltage is further increased, the interface charge accumulation is more serious, and the service life and the efficiency of the device are greatly influenced. Because a charge transfer phenomenon exists between the zinc oxide and the quantum dot interface and the electron binding capacity of the quantum dot is lower than that of the quantum dot to the hole, the serious charge transfer phenomenon occurs at the zinc oxide and quantum dot interface, and the charge transfer is more serious along with the improvement of the conduction band energy level of the blue quantum dot. The transfer of excited electrons between interfaces not only causes the charge accumulation at the interfaces, but also greatly improves the probability of nonradiative Auger recombination, and seriously influences the efficiency and the service life of the device.
The complex interaction between the quantum dot light emitting layer and the zinc oxide electron transport layer, including energy level difference at the QD/ZnO interface, exciton transfer and electron transfer, has effects closely related to the oxygen vacancy concentration, conduction band position and electron transport rate in ZnO, and the effects change in the storage aging process of the device. The reaction between the zinc oxide electron transport layer and the cathode can also generate metal oxide, so that the interface potential barrier is improved; it is also possible to increase the oxygen vacancy concentration of ZnO. Thus, the stability of zinc oxide is critical to the efficiency and lifetime of the device. However, the stability of zinc oxide is still to be improved.
Disclosure of Invention
The application aims to provide a preparation method of a zinc oxide nanoparticle solution, a preparation method of a zinc oxide film, a quantum dot light-emitting diode and a preparation method thereof, so as to solve the technical problem of instability of zinc oxide nanoparticles.
In order to achieve the purpose of the application, the technical scheme adopted by the application is as follows:
in a first aspect, the present application provides a method for preparing a zinc oxide nanoparticle solution, comprising the steps of:
providing an initial zinc oxide nanoparticle solution;
and adding an acetate metal salt solution into the initial zinc oxide nanoparticle solution to obtain the zinc oxide nanoparticle solution.
The application provides a preparation method of zinc oxide nanoparticle solution, add the metal acetate solution to mix in the original zinc oxide nanoparticle solution, the metal acetate in the solution will modify original zinc oxide nanoparticle, after the metal acetate dissolves, the carboxyl can replace the partial hydroxyl on original zinc oxide nanoparticle surface, the cohesion of carboxyl and zinc oxide nanoparticle is stronger, and has higher solubility, can obviously improve the zinc oxide nanoparticle and deposit stability in the solution, and the carboxyl can better blunt the surface defect of zinc oxide nanoparticle, the zinc oxide nanoparticle solution that obtains if prepare into the zinc oxide film like this, and when using for quantum dot emitting diode, can improve quantum dot emitting diode's device luminous efficacy and life.
In a second aspect, the present application provides a method for preparing a zinc oxide thin film, comprising the following steps:
providing a zinc oxide nanoparticle solution obtained by the preparation method;
and spin-coating the zinc oxide nanoparticle solution on a substrate, and then carrying out heating treatment to obtain the zinc oxide film.
The preparation method of the zinc oxide film is obtained by spin coating the zinc oxide nanoparticle solution obtained by the preparation method specific to the application, and the prepared zinc oxide film has good prospect when used for quantum dot light-emitting diodes because the zinc oxide nanoparticle solution has good stability and low particle surface defects.
In a third aspect, the present application provides a method for manufacturing a quantum dot light emitting diode, comprising the following steps:
providing a substrate;
the preparation method of the zinc oxide film is adopted to prepare the zinc oxide film on the substrate to obtain the electron transmission layer.
According to the preparation method of the quantum dot light-emitting diode, the prepared electron transmission layer is the zinc oxide film obtained by the preparation method of the zinc oxide film, so that the preparation method of the quantum dot light-emitting diode can improve the luminous efficiency and prolong the service life of a device.
In a fourth aspect, the present application further provides a quantum dot light emitting diode, which is prepared by the above quantum dot light emitting diode preparation method. The device has good luminous efficiency and service life.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for preparing a zinc oxide nanoparticle solution provided in an embodiment of the present application;
fig. 2 is a schematic flow chart of a method for preparing a zinc oxide thin film according to an embodiment of the present disclosure;
fig. 3 is a schematic flow chart of a method for manufacturing a quantum dot light emitting diode according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a quantum dot light emitting diode provided in an embodiment of the present application.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application more clearly apparent, the present application is further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In this application, the term "and/or" describes an association relationship of associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a is present alone, A and B are present simultaneously, and B is present alone. Wherein A and B can be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship. In the present application, "at least one" means one or more, "a plurality" means two or more.
In a first aspect of the embodiments of the present application, a method for preparing a solution of zinc oxide nanoparticles is provided, as shown in fig. 1, the method including the steps of:
s01: providing an initial zinc oxide nanoparticle solution;
s02: and adding an acetate metal salt solution into the initial zinc oxide nanoparticle solution to obtain the zinc oxide nanoparticle solution.
The application provides a method for preparing zinc oxide nano-particle solution, adding acetate metal salt solution into initial zinc oxide nano-particle solution for mixing, thus the acetate metal salt in the solution modifies the initial zinc oxide nano-particle, after the acetate metal salt is dissolved, carboxyl can replace partial hydroxyl on the surface of the initial zinc oxide nano-particle, the bonding force of the carboxyl and the zinc oxide nano-particle is stronger, and the carboxyl and the zinc oxide nano-particle have higher solubility, meanwhile, metal ions in the acetate metal salt solution can replace partial zinc ions on the surface of zinc oxide, the electronic structure of the zinc oxide nano-particle is adjusted, the agglomeration phenomenon of the obtained zinc oxide nano-particle solution in the storage process is reduced, the stability and the electrical property are obviously improved, when the zinc oxide nano-particle solution is prepared into a zinc oxide film and used for a quantum dot light-emitting diode, the stability of the device can be improved, the fluorescence quenching at the interface of the electron dot light-emitting layer and the electron transport layer is reduced, the light-emitting efficiency of the device is improved, and the service life of the device is prolonged.
In the above step, the initial zinc oxide nanoparticle solution is a solution containing initial zinc oxide nanoparticles, and may be a solution obtained by dissolving initial zinc oxide nanoparticles purchased from the market in a solvent, or an initial zinc oxide nanoparticle solution obtained by directly performing a sol-gel reaction using zinc salt as a raw material. The solvent in the solution of the initial zinc oxide nanoparticles is an alcohol solvent, and the alcohol solvent can better disperse the initial zinc oxide nanoparticles.
In one embodiment, the molar ratio of zinc ions in the initial zinc oxide nanoparticle solution to metal acetate salts in the metal acetate salt solution is (2-10): 1. within the range of the molar ratio, the metal acetate can not only well modify the zinc oxide nano-particles, but also can not excessively consume materials.
In one embodiment, the concentration of the initial zinc oxide nanoparticles in the initial zinc oxide nanoparticle solution is 10-60 mg/mL. Within the concentration range, the initial zinc oxide nano particles are uniformly dispersed and can fully react with an acetate solution.
In one embodiment, the solvent in the metal acetate solution is an alcohol solvent, which is the same as the solvent system of the initial zinc oxide nanoparticle solution, so as not to affect the modification of the initial zinc oxide nanoparticles by the metal acetate.
Further, the metal acetate salt in the metal acetate salt solution includes, but is not limited to, at least one of magnesium acetate, aluminum acetate, sodium acetate, potassium acetate and zinc acetate, and in one embodiment, when the metal ions in the metal acetate salt are not zinc ions (such as magnesium ions, aluminum ions, potassium ions or sodium ions), part of the zinc ions on the surface of the original zinc oxide nanoparticles can be replaced, so that the electronic structure of the zinc oxide can be adjusted to some extent, and the electrical properties of the zinc oxide can be optimized.
In one embodiment, the method for preparing the zinc oxide nanoparticle solution further comprises: and washing the initial zinc oxide nanoparticle solution added with the metal acetate solution by using ethanol and/or ethyl acetate, and dissolving the washed zinc oxide nanoparticles in an alcohol solvent to obtain the zinc oxide nanoparticle solution, so that the film can be prepared. Carboxyl in the metal acetate can well passivate the surface defects of the zinc oxide nanoparticles, improve the stability of the zinc oxide nanoparticles and reduce the agglomeration of a zinc oxide nanoparticle solution in the storage process, so that the zinc oxide nanoparticle solution has better stability, a zinc oxide film with good stability can be obtained when the zinc oxide nanoparticle solution is used for forming a film, and the zinc oxide nanoparticle solution is used as an electron transport layer of a quantum dot light-emitting diode and also improves the stability of zinc oxide in a device.
Herein, the above alcohol solvent is selected from at least one of methanol, ethanol and propanol. The alcohol solvent in the metal acetate solution, the alcohol solvent in the initial zinc oxide nanoparticle solution and the alcohol solvent in which the washed zinc oxide nanoparticles are dissolved can be selected from the same single-component alcohol solvent or different single-component alcohol solvents, or two of the alcohol solvents are selected from the same single-component alcohol solvent, the other alcohol solvent is different single-component alcohol solvents, and any combination of the same or different alcohol solvents can be used. The alcohol solvent can well disperse the zinc oxide nano-particles and can dissolve the metal acetate, and the metal acetate can fully modify the surfaces of the initial zinc oxide nano-particles in the alcohol solvent system; finally obtaining the stable zinc oxide nano-particle solution.
In a second aspect of the embodiments of the present application, as shown in fig. 2, a method for preparing a zinc oxide thin film includes the following steps:
e01: providing a zinc oxide nanoparticle solution obtained by the preparation method;
e02: and spin-coating the zinc oxide nanoparticle solution on a substrate, and then performing heating treatment to obtain the zinc oxide film.
The preparation method of the zinc oxide film is obtained by spin coating the zinc oxide nanoparticle solution obtained by the preparation method specific to the application, and the prepared zinc oxide film has good prospect when used for quantum dot light-emitting diodes because the zinc oxide nanoparticle solution has good stability and low particle surface defects.
Further, the temperature of the heating treatment is 60-100 ℃, and the time of the heating treatment is 10-30 min. The zinc oxide film can be formed better under the conditions.
A third aspect of the embodiments of the present application provides a method for manufacturing a quantum dot light emitting diode, as shown in fig. 3, the method includes the following steps:
t01: providing a substrate;
t02: the preparation method of the zinc oxide film is adopted to prepare the zinc oxide film on the substrate to obtain the electron transmission layer.
The stability of zinc oxide has a great influence on the performance of devices, and is divided into the storage stability of zinc oxide solutions and the influence of zinc oxide on the stability of devices. In this application, the initial zinc oxide nanoparticle solution is modified by the metal acetate salt, part of hydroxyl can be replaced by carboxyl, the binding force of the carboxyl and the zinc oxide nanoparticles is stronger, and the solution has higher solubility, the storage stability of the zinc oxide nanoparticle solution can be obviously improved, the stability of the carboxyl is higher than that of the hydroxyl, the surface defects of the zinc oxide can be better passivated, the defect energy level of the zinc oxide is eliminated, the fluorescence quenching of quantum dots and zinc oxide interfaces is reduced, and the luminous efficiency of devices is improved. The metal ions in the metal acetate such as sodium ions, potassium ions, aluminum ions or magnesium ions can also replace the zinc ions on the surface part of the zinc oxide, so that the electronic structure of the zinc oxide nano particles is regulated to a certain degree, and the electrical property of the zinc oxide is optimized. According to the preparation method of the quantum dot light-emitting diode, the prepared electron transmission layer is the zinc oxide film obtained by the preparation method of the zinc oxide film, so that the preparation method of the quantum dot light-emitting diode can improve the luminous efficiency and prolong the service life of a device.
In one embodiment, the qd-led is a positive device, and the preparation method thereof may include the following steps:
providing a substrate; preparing an anode on a substrate; preparing a quantum dot light-emitting layer on the anode; preparing a zinc oxide film on the surface of the quantum dot light emitting layer on the substrate by adopting the preparation method of the zinc oxide film to obtain an electron transmission layer; a cathode is prepared on the electron transport layer. Further, before the quantum dot light emitting layer is prepared on the anode, a hole functional layer (for example, a hole transport layer is prepared, or a stacked hole injection layer and a hole transport layer are sequentially prepared) may be prepared on the anode, and then the quantum dot light emitting layer is prepared on the hole functional layer. Further, before the cathode is fabricated on the electron transport layer, an electron injection layer may be fabricated on the electron transport layer, and then the anode may be fabricated on the electron injection layer.
In another embodiment, the quantum dot light emitting diode is an inverted device, and the preparation method thereof may include the following steps:
providing a substrate; preparing a cathode on a substrate; preparing a zinc oxide film on the surface of the cathode on the substrate by adopting the preparation method of the zinc oxide film to obtain an electron transmission layer; preparing a quantum dot light-emitting layer on the electron transport layer; and preparing an anode on the quantum dot light-emitting layer. Further, before the anode is prepared on the quantum dot light emitting layer, a hole functional layer (for example, a hole transport layer is prepared, or a stacked hole transport layer and a hole injection layer are sequentially prepared) may be prepared on the quantum dot light emitting layer, and then the anode is prepared on the hole functional layer. Further, before the electron transport layer is prepared on the cathode of the substrate, an electron injection layer may be prepared on the cathode, and then the electron transport layer may be prepared on the electron injection layer.
In a fourth aspect of the embodiments of the present application, there is provided a quantum dot light emitting diode, which is prepared by the above method for preparing a quantum dot light emitting diode. The device has good luminous efficiency and service life.
Specifically, the quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode, wherein an electron transmission layer is arranged between the cathode and the quantum dot light-emitting layer, and the electron transmission layer is the zinc oxide film obtained by the preparation method of the zinc oxide film. Further, in the quantum dot light emitting diode of the present embodiment, an electron injection layer may be further disposed between the electron transport layer and the cathode. Or a hole transport layer can be arranged between the anode and the quantum dot light-emitting layer, and further a hole injection layer can be arranged between the anode and the hole transport layer.
The following description will be given with reference to specific examples.
Example 1
Preparation of zinc oxide nanoparticle solution
(1) Adding 5mL of magnesium acetate ethanol solution (20mg/mL) into 10mL of initial zinc oxide nanoparticle ethanol solution (zinc oxide concentration is 40mg/mL), and stirring for 10min to obtain a mixed solution;
(2) and adding ethyl acetate into the mixed solution for precipitation and cleaning, dissolving the precipitate into ethanol again after centrifugal separation, and repeating the step once again to obtain the modified zinc oxide nanoparticle solution.
Example 2
The preparation of the zinc oxide film comprises the following steps:
the zinc oxide nanoparticle solution (concentration of 30mg/mL) in example 1 was spin-coated on a substrate; wherein the spin-coating speed is 3000 rpm, and the spin-coating time is 30 s;
and after the spin coating is finished, heating at 80 ℃ for 20min to obtain the zinc oxide film.
Example 3
The preparation of the quantum dot light-emitting diode comprises the following steps:
(1) and evaporating ITO (indium tin oxide) on the substrate to form an anode, wherein the thickness of the ITO is 40nm, then cleaning for 15min by UVO (ultraviolet ozone), and improving the surface wettability and the work function of the ITO while cleaning the surface.
(2) PSS is taken as a hole injection layer, the spin coating speed is 4000 rpm, the spin coating is 40s, then the annealing is carried out for 15min at 150 ℃, and the whole step is carried out in the air.
(3) And (3) spin-coating a layer of TFB on the hole injection layer to form a hole transport layer, wherein the TFB is dissolved in chlorobenzene and has the concentration of 8mg/mL, the spin-coating rotating speed of 3000 r/min and the spin-coating time of 30s, then annealing at 150 ℃ for 20min, and the whole step is carried out in a glove box.
(4) And (3) spin-coating a quantum dot light-emitting layer on the hole transport layer, wherein the quantum dots are dissolved in n-octane, the concentration is 20mg/mL, the rotating speed is 3000 rpm, the spin-coating is carried out for 30s, and then the heating is carried out for 20min at 100 ℃, and the step is carried out in a glove box.
(5) Spin coating an electron transport layer on the quantum dot light emitting layer:
the zinc oxide nanoparticle solution (concentration of 30mg/mL) in example 1 was spin-coated at a spin speed of 3000 rpm for 30s, followed by heating at 80 ℃ for 20min, which was carried out in a glove box.
(6) And evaporating Al with the thickness of 100nm on the zinc oxide electron transport layer to be used as a cathode.
Example 4
The preparation of the quantum dot light-emitting diode comprises the following steps:
(1) and evaporating ITO (indium tin oxide) on the substrate to form an anode, wherein the thickness of the ITO is 40nm, then cleaning for 15min by UVO (ultraviolet ozone), and improving the surface wettability and the work function of the ITO while cleaning the surface.
(2) PSS is taken as a hole injection layer, the spin coating speed is 4000 rpm, the spin coating is 40s, then the annealing is carried out for 15min at 150 ℃, and the whole step is carried out in the air.
(3) And (3) spin-coating a layer of TFB on the hole injection layer to form a hole transport layer, wherein the TFB is dissolved in chlorobenzene and has the concentration of 8mg/mL, the spin-coating rotating speed of 3000 r/min and the spin-coating time of 30s, then annealing at 150 ℃ for 20min, and the whole step is carried out in a glove box.
(4) And (3) spin-coating a quantum dot light-emitting layer on the hole transport layer, wherein the quantum dots are dissolved in n-octane, the concentration is 20mg/mL, the rotating speed is 3000 rpm, the spin-coating is carried out for 30s, and then the heating is carried out for 20min at 100 ℃, and the step is carried out in a glove box.
(5) Spin coating an electron transport layer on the quantum dot light emitting layer:
the zinc oxide nanoparticle solution (concentration of 30mg/mL) in example 1 was stored in a refrigerator at 5 ℃ for 14 days and then spin-coated at 3000 rpm for 30s, followed by heating at 80 ℃ for 20min, which was carried out in a glove box.
(6) And evaporating 100nm of Al on the electron transport layer to form an anode.
Example 5
A quantum dot light emitting diode is shown in FIG. 4, from bottom to top: the light-emitting diode comprises a substrate 10, an anode 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light-emitting layer 4, an electron transport layer 5 and a cathode 6.
This device was prepared using the procedure of example 3.
Example 6
A quantum dot light emitting diode is shown in FIG. 4, from bottom to top: the light-emitting diode comprises a substrate 10, an anode 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light-emitting layer 4, an electron transport layer 5 and a cathode 6.
This device was prepared using the procedure of example 4.
Comparative example
A quantum dot light emitting diode is shown in FIG. 4, from bottom to top: the light-emitting diode comprises a substrate 10, an anode 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light-emitting layer 4, an electron transport layer 5 and a cathode 6.
The device was fabricated by the same procedure as in example 3, except that the unmodified ethanol solution of the starting zinc oxide nanoparticles (30 mg/mL) in example 1 was used for the fabrication of the electron transport layer.
Performance testing
(1) The zinc oxide nanoparticle solution prepared in example 1 was subjected to particle size measurement, and the specific measurement method was: the zinc oxide nanoparticle solution was tested by a laser particle size distribution tester by a scattering method to obtain particle sizes, and the results are shown in table 1:
TABLE 1
(2) The devices of examples 5-6 and comparative examples were tested for external quantum efficiency and lifetime performance by the following specific test methods: the external quantum efficiency of the device is obtained by testing JVL efficiency testing equipment, the service life of the device is obtained by accelerated testing and then conversion of service life testing equipment under high current, and the result is shown in Table 2:
TABLE 2
| Item group classification | External Quantum Efficiency (EQE) | T95(1000nit) |
| Example 5 | 19.5％ | 7410h |
| Example 6 | 20.1％ | 6300h |
| Comparative example | 17.1％ | 2100h |
As can be seen from the data in tables 1 and 2, the preparation method of the invention can obviously improve the storage stability of the zinc oxide nanoparticle solution, and the zinc oxide nanoparticle solution can be used for the electron transport layer of the quantum dot light-emitting diode, thereby improving the luminous efficiency and the service life of the device.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A preparation method of zinc oxide nanoparticle solution is characterized by comprising the following steps:
providing an initial zinc oxide nanoparticle solution;
and adding an acetate metal salt solution into the initial zinc oxide nanoparticle solution to obtain the zinc oxide nanoparticle solution.
2. The method of claim 1, wherein the molar ratio of zinc ions in the initial zinc oxide nanoparticle solution to metal acetate salts in the metal acetate salt solution is (2-10): 1; and/or the presence of a gas in the gas,
the concentration of the initial zinc oxide nanoparticle solution is 10-60 mg/mL.
3. The method of claim 1, wherein the metal acetate salt in the metal acetate salt solution is at least one selected from the group consisting of magnesium acetate, aluminum acetate, sodium acetate, and potassium acetate.
4. The method of claim 1, wherein the solvent of the initial zinc oxide nanoparticle solution is an alcohol solvent and the solvent of the metal acetate salt solution is an alcohol solvent.
5. The method of any one of claims 1 to 4, wherein the method further comprises: and cleaning the initial zinc oxide nanoparticle solution added with the metal acetate solution by adopting ethanol and/or ethyl acetate, and dissolving the cleaned zinc oxide nanoparticles in an alcohol solvent to obtain the zinc oxide nanoparticle solution.
6. The method for preparing a solution of zinc oxide nanoparticles according to claim 5, wherein the alcohol solvent is at least one selected from the group consisting of methanol, ethanol and propanol.
7. The preparation method of the zinc oxide film is characterized by comprising the following steps:
providing a zinc oxide nanoparticle solution obtained by the production method according to any one of claims 1 to 6;
and spin-coating the zinc oxide nanoparticle solution on a substrate, and then carrying out heating treatment to obtain the zinc oxide film.
8. The method for preparing a zinc oxide thin film according to claim 7, wherein the temperature of the heat treatment is 60 to 100 ℃; and/or the presence of a gas in the gas,
the time of the heating treatment is 10-30 min.
9. A preparation method of a quantum dot light-emitting diode is characterized by comprising the following steps:
providing a substrate;
preparing a zinc oxide thin film on the substrate by using the method for preparing a zinc oxide thin film according to claim 7 or 8 to obtain an electron transport layer.
10. A quantum dot light-emitting diode prepared by the preparation method of claim 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110301125.8A CN115117284A (en) | 2021-03-22 | 2021-03-22 | Preparation method of zinc oxide nanoparticle solution, preparation method of zinc oxide film, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode |
| PCT/CN2021/129006 WO2022199037A1 (en) | 2021-03-22 | 2021-11-05 | Method for preparing zinc oxide nanoparticle solution, method for preparing zinc oxide thin film, and method for preparing quantum dot light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110301125.8A CN115117284A (en) | 2021-03-22 | 2021-03-22 | Preparation method of zinc oxide nanoparticle solution, preparation method of zinc oxide film, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115117284A true CN115117284A (en) | 2022-09-27 |
Family
ID=83323650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110301125.8A Pending CN115117284A (en) | 2021-03-22 | 2021-03-22 | Preparation method of zinc oxide nanoparticle solution, preparation method of zinc oxide film, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115117284A (en) |
| WO (1) | WO2022199037A1 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109148695B (en) * | 2017-06-28 | 2020-06-23 | Tcl科技集团股份有限公司 | Preparation method of metal oxide nanoparticle film and electrical device |
| CN108807685A (en) * | 2018-08-10 | 2018-11-13 | 佛山腾鲤新能源科技有限公司 | A kind of preparation method of densification coating modification type solar cell interface material |
| CN112390280A (en) * | 2019-08-19 | 2021-02-23 | Tcl集团股份有限公司 | Preparation method of zinc oxide nano material, electron transport material and quantum dot light-emitting diode |
| CN112447919A (en) * | 2019-08-30 | 2021-03-05 | 三星电子株式会社 | Light emitting device and display apparatus including the same |
-
2021
- 2021-03-22 CN CN202110301125.8A patent/CN115117284A/en active Pending
- 2021-11-05 WO PCT/CN2021/129006 patent/WO2022199037A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022199037A1 (en) | 2022-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Xiong et al. | Realizing 17.0% external quantum efficiency in red quantum dot light-emitting diodes by pursuing the ideal inkjet-printed film and interface | |
| CN104823295B (en) | The transition metal oxide of solution processing | |
| CN112538163A (en) | Composite material, preparation method thereof and quantum dot light-emitting diode | |
| Chen et al. | Color Revolution: Prospects and Challenges of Quantum‐Dot Light‐Emitting Diode Display Technologies | |
| CN112635674B (en) | Organic solar cell with ZnO film doped with biological material GHK-Cu as electron transport layer and preparation method thereof | |
| CN113838985B (en) | Zinc oxide nano material, preparation method thereof and luminescent device | |
| CN115117284A (en) | Preparation method of zinc oxide nanoparticle solution, preparation method of zinc oxide film, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode | |
| CN113948647A (en) | Nano material, preparation method thereof and quantum dot light-emitting diode | |
| CN109326743B (en) | Preparation method of light-emitting diode based on nano tungsten bronze | |
| CN112349850A (en) | Inorganic semiconductor material and preparation method thereof | |
| CN114039002B (en) | Electron transport ink, electron transport film, electroluminescent diode, and display device | |
| CN113120947A (en) | Composite material, preparation method thereof and quantum dot light-emitting diode | |
| US20240076197A1 (en) | Composite electron transport material and preparation method therefor, and light-emitting diode | |
| CN112625674B (en) | Composite material, quantum dot light-emitting diode and preparation method thereof | |
| CN114649490A (en) | Treatment method of quantum dot light-emitting layer, electroluminescent device and preparation method thereof | |
| WO2022227661A1 (en) | Quantum dot film and preparation method therefor, and preparation method for quantum dot light-emitting diode | |
| CN109935732A (en) | Hole mobile material, QLED device and preparation method thereof | |
| CN109713152B (en) | Thin film, preparation method thereof and QLED device | |
| CN114695826A (en) | Method for regulating and controlling electron mobility of zinc oxide | |
| CN113809247A (en) | Zinc oxide film, preparation method thereof and quantum dot light-emitting diode | |
| CN104953033B (en) | A kind of organic solar batteries of light wave conversion and absorbing material blending | |
| CN116156928A (en) | Nano material, preparation method of nano material and electroluminescent device | |
| CN117264463A (en) | Zinc oxide nanoparticle composite ink and application thereof in quantum dot electroluminescent diode | |
| WO2023070737A1 (en) | Electroluminescent device and preparation method therefor | |
| CN116769479A (en) | Preparation method of luminescent material based on blue perovskite quantum dots and electroluminescent device thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |