CN115117190A - IBC battery and IBC battery pack - Google Patents
IBC battery and IBC battery pack Download PDFInfo
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- CN115117190A CN115117190A CN202210698233.8A CN202210698233A CN115117190A CN 115117190 A CN115117190 A CN 115117190A CN 202210698233 A CN202210698233 A CN 202210698233A CN 115117190 A CN115117190 A CN 115117190A
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- 230000000670 limiting effect Effects 0.000 claims abstract description 82
- 238000003466 welding Methods 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910000679 solder Inorganic materials 0.000 claims abstract description 16
- 230000000712 assembly Effects 0.000 claims description 4
- 238000000429 assembly Methods 0.000 claims description 4
- 230000014759 maintenance of location Effects 0.000 claims 1
- 238000010248 power generation Methods 0.000 abstract description 3
- 239000003990 capacitor Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The embodiment of the invention provides an IBC (intermediate bulk capacitor) battery and an IBC battery assembly, and relates to the technical field of photovoltaic power generation, wherein the IBC battery comprises a silicon substrate, a main grid and a limiting assembly; the main grid is arranged on the backlight surface of the silicon substrate; the limiting components are connected with the backlight surface and positioned on two sides of the main grid along the length direction of the main grid; along the vertical direction of the backlight surface, the height of the limiting component is greater than that of the main grid. Through set up spacing subassembly in main bars both sides, can form spacing space and carry out spacing fixed to the solder strip, promote the precision of counterpoint. The welding strip and the main grid can be prevented from being deviated, so that the situation that the IBC battery is short-circuited can be avoided, and the safety factor is improved.
Description
Technical Field
The invention relates to the technical field of photovoltaic power generation, in particular to an IBC battery and an IBC battery assembly.
Background
The IBC (Interdigitated back contact) cell is a back-junction back-contact solar cell structure in which positive and negative metal electrodes are arranged on the backlight surface of the cell in an interdigital manner. The backlight surface of the IBC battery is provided with a main grid, and the main grid is welded with the welding strip to realize current transmission and battery series connection.
In the prior art, when a main grid and a welding strip are welded, the problem that the main grid and the welding strip are not accurately aligned exists, and the IBC battery is easily short-circuited due to the fact that positive and negative metal electrodes of the IBC battery are on the backlight surface.
Disclosure of Invention
The invention provides an IBC (intermediate bulk capacitor) battery and an IBC battery assembly, which aim to solve the problem that in the prior art, when a main grid and a welding strip are welded, the main grid and the welding strip are not aligned accurately, and the IBC battery is easy to short circuit.
In order to solve the above problems, the present invention is realized by:
an embodiment of the present invention provides an IBC battery, including: the silicon substrate, the main grid and the limiting assembly;
the main grid is arranged on a backlight surface of the silicon substrate;
the limiting assemblies are connected with the backlight surface and are positioned on two sides of the main grid along the length direction of the main grid;
along the vertical direction of the backlight surface, the height of the limiting component is greater than that of the main grid.
Optionally, along the length direction of the main grid, the limiting assembly is of a continuous structure.
Optionally, the limiting assembly comprises a plurality of limiting members;
the limiting pieces are respectively connected with the backlight surface;
and the plurality of limiting parts are arranged at intervals along the length direction of the main grid.
Optionally, the limiting members are symmetrically distributed on two sides of the main grid along the length direction of the main grid.
Optionally, the IBC cell further comprises a plurality of pads;
the bonding pads are arranged at intervals along the length direction of the main grid;
the limiting assembly is bent at the welding pad to form an avoiding space, and the welding pad is located in the avoiding space.
Optionally, along a vertical direction of the backlight surface, the height of the limiting component is greater than the height of the pad.
Optionally, an end face of the limiting component on the side departing from the backlight surface is provided with a chamfer.
Optionally, the size of the stopper is 1 μm to 100 μm in a direction perpendicular to the backlight surface.
Optionally, the size of the stopper is 1 μm to 10 μm in the width direction of the main gate.
The embodiment of the invention also provides an IBC battery component which comprises the IBC battery.
In the embodiment of the invention, the IBC battery comprises a silicon substrate, a main grid and a limiting assembly; the main grid is arranged on the backlight surface of the silicon substrate; the limiting components are connected with the backlight surface and positioned on two sides of the main grid along the length direction of the main grid; along the vertical direction of the backlight surface, the height of the limiting component is greater than that of the main grid. Through set up spacing subassembly in main bars both sides, can form spacing space and carry out spacing fixed to the welding area, promote the precision of counterpointing. The welding strip and the main grid can be prevented from being deviated, so that the situation that the IBC battery is short-circuited can be avoided, and the safety factor is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 shows one of the schematic structural diagrams of an IBC cell according to an embodiment of the present invention;
FIG. 2 is a second schematic diagram of an IBC battery according to an embodiment of the present invention;
FIG. 3 is a third schematic diagram of an IBC battery according to an embodiment of the present invention;
FIG. 4 shows a cross-sectional view taken along the line A-A of FIG. 3 in accordance with an embodiment of the present invention;
FIG. 5 is a fourth schematic diagram of an IBC battery according to an embodiment of the present invention;
FIG. 6 shows a fifth exemplary IBC cell structure according to the present invention;
FIG. 7 shows a cross-sectional view taken along the line B-B in FIG. 5, in accordance with an embodiment of the present invention.
Description of reference numerals:
10-a silicon substrate; 20-a main gate; 30-a spacing assembly; 40-a pad; 301-a stop.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
Referring to fig. 1 to 2, an embodiment of the present invention provides an IBC battery, including: a silicon substrate 10, a main grid 20 and a limiting assembly 30; the main grid 20 is arranged on a backlight surface of the silicon substrate 10; the limiting component 30 is connected with the backlight surface, and the limiting component 30 is located on two sides of the main grid 20 along the length direction thereof; along the vertical direction of the backlight surface, the height of the limiting component 30 is greater than that of the main grid 20.
Specifically, as shown in fig. 1 to 2, the silicon substrate 10 includes a light-facing surface and a backlight surface that are arranged oppositely, and the light-facing surface is used for receiving light. The backlight surface is provided with a plurality of main grids 20 which are arranged in parallel and mainly play a role in current collection and transmission, and the main grids 20 can be manufactured through a screen printing process. In the series welding process of the battery, the welding strips weld the main grids 20 of the adjacent silicon substrates 10 together to realize series connection.
Limiting assemblies 30 are arranged on two sides of the main grate 20 along the length direction of the main grate, the limiting assemblies 30 form limiting spaces, and the main grate 20 is at least partially positioned in the limiting spaces. The limiting component 30 may be formed on the backlight surface of the silicon substrate 10 by using a paste, which may be a silver paste type metal paste, a polyimide type polymer paste, or an alumina type inorganic paste, and the limiting component 30 may be formed on both sides of the main gate 20.
The spacing assembly 30 may be divided into a first portion and a second portion, the first portion is located at the left side of the main grid 20 along the length direction thereof, the second portion is located at the right side of the main grid 20 along the length direction thereof, and the first portion and the second portion are arranged in parallel to sandwich the main grid 20. The first and second portions are each spaced from the main grid 20 by a distance selected based on the size of the main grid 20 and the solder ribbon.
Along the vertical direction of the backlight surface, namely the direction of height of the main grid 20, the height of the limiting component 30 is greater than the height of the main grid 20, when the welding strip is welded and attached to the main grid 20, at least part of the welding strip is embedded in a limiting space formed by the limiting component 30, therefore, the limiting component 30 can limit the two sides of the welding strip, the welding strip is prevented from deviating relative to the main grid 20, and short circuit of adjacent positive electrodes and negative electrodes is avoided.
In the embodiment of the present invention, the IBC cell includes a silicon substrate 10, a main grid 20, and a position limiting assembly 30; the main grid 20 is arranged on the backlight surface of the silicon substrate 10; the limiting components 30 are connected with the backlight surface, and the limiting components 30 are positioned on two sides of the main grid 20 along the length direction of the main grid; along the vertical direction of the backlight surface, the height of the limiting component 30 is greater than that of the main grid 20. Through set up spacing subassembly 30 in main bars 20 both sides, can form spacing space and carry out spacing fixed to the solder strip, promote the precision of counterpoint. The deviation between the welding strip and the main grid 20 can be avoided, so that the situation of short circuit of the IBC battery can be avoided, and the safety factor is improved.
Alternatively, referring to fig. 1 to 2, the limiting assembly 30 is a continuous structure along the length direction of the main grid 20.
Specifically, as shown in fig. 1 to 2, in one embodiment of the present invention, the position limiting assembly 30 includes a first portion and a second portion, the first portion is located at the left side of the main grid 20 along the length direction thereof, the second portion is located at the right side of the main grid 20 along the length direction thereof, and the first portion and the second portion are arranged in parallel to sandwich the main grid 20. The first and second portions are each of a continuous configuration, i.e., the length of the first and second portions is consistent with the length of the main grid 20. When welding the area and the laminating welding of main bars 20, spacing subassembly 30 all can realize limiting displacement on welding the area and the optional position of main bars 20 contact, has promoted spacing effect greatly, has promoted to weld the stability of taking the connection, is difficult for taking place the skew.
Optionally, referring to fig. 3 to 4, the limiting assembly 30 includes a plurality of limiting members 301; the limiting members 301 are respectively connected with the backlight surface; along the length direction of the main grid 20, a plurality of the stoppers 301 are disposed at intervals.
Specifically, as shown in fig. 3-4, in one embodiment of the present invention, the position limiting assembly 30 may also adopt a segmented structure. The limiting component 30 includes a plurality of limiting members 301, and the limiting members 301 are disposed at intervals along the length direction of the main grid 20. For example, ten limiting members 301 are distributed on the left side of the main grid 20, and ten limiting members 301 are also distributed on the right side of the main grid 20. The quantity of the limiting pieces 301 on the left side and the right side of the main grid 20 can be the same or different; the stoppers 301 may be symmetrically disposed on the left and right sides of the main grid 20, or alternatively disposed. The spacing distance between adjacent limiting members 301 may be selected according to the sizes of the solder strips and the main grid 20, which is not limited in the embodiment of the present invention.
Through setting up a plurality of spaced locating parts 301 at the length direction of main grid 20, when guaranteeing to take normal limit function to welding, can also reduce the use of thick liquids, be favorable to reduction in production cost, satisfied the lightweight design requirement of product simultaneously.
Optionally, as shown in fig. 3 to 4, the stoppers 301 are symmetrically distributed on both sides of the main grid 20 along the length direction thereof.
Specifically, the stoppers 301 may be symmetrically distributed on both left and right sides of the main grid 20, or may be distributed in a staggered manner. In the embodiment of the present invention, the position-limiting members 301 are symmetrically distributed on the left and right sides of the main grid 20. As shown in fig. 3 to 4, ten limiting members 301 are distributed on the left side of the main grid 20, ten limiting members 301 are distributed on the right side of the main grid 20, and the limiting members 301 on the left side and the right side are respectively arranged in a one-to-one correspondence and symmetrical manner.
The locating part 301 of symmetric distribution can all realize spacing fixedly to the left and right sides of welding the area same position, has promoted spacing effect greatly.
Optionally, as shown with reference to fig. 5-7, the IBC cell further comprises a plurality of bonding pads 40; the bonding pads 40 are arranged at intervals along the length direction of the main grid 20; the limiting assembly 30 is bent at the welding pad 40 to form an avoiding space, and the welding pad 40 is located in the avoiding space.
Specifically, as shown in fig. 5 to 7, in order to improve the stability of the bonding between the bonding tape and the main grid 20, a plurality of pads 40 are provided at intervals on the main grid 20, and the plurality of pads 40 are distributed at intervals along the longitudinal direction of the main grid 20. The width of the bonding pad 40 is greater than that of the main grid 20, so that when the bonding pad 40 is used for welding the main grid 20 and the welding strip, the welding area between the main grid 20 and the welding strip can be increased, and the welding stability is improved. The bonding pad 40 and the main grid 20 can be made of the same material, and the bonding pad 40 and the main grid 20 can be made by adopting an integral forming process.
After the first part of the limiting assembly 30, which is located on the left side of the main grid 20, is bent leftwards, the first part is extended by a preset length along the length direction of the main grid 20, and then is bent rightwards; the second portion of the limiting component 30 on the right side of the main grid 20 is bent rightwards, extends for a preset length along the length direction of the main grid 20, and then is bent leftwards, so that the limiting component 30 is bent at the pad 40 to form an avoiding space, and the pad 40 is located in the avoiding space.
When welding area and pad 40 when welding, weld the area and at least partly inlay and locate in the spacing space that spacing subassembly 30 formed to spacing subassembly 30 can realize spacingly to the both sides of welding the area, avoids welding the area and takes place the skew for main grid 20, thereby has avoided adjacent positive electrode and negative electrode short circuit to appear, has promoted factor of safety.
Optionally, as shown in fig. 5 to 7, along the vertical direction of the backlight surface, the height of the limiting component 30 is greater than the height of the pad 40.
Specifically, as shown in fig. 5 to 7, along the vertical direction of the backlight surface, that is, the height direction of the main grid 20, the height of the limiting component 30 is greater than the height of the pad 40, and when the solder strip is welded and attached to the pad 40, at least a part of the solder strip is embedded in the limiting space formed by the limiting component 30, so that the limiting component 30 can limit the two sides of the solder strip, and the solder strip is prevented from deviating from the pad 40, thereby preventing the adjacent positive electrode and negative electrode from short-circuiting.
Optionally, an end surface of the side of the limiting component 30 facing away from the backlight surface is provided with a chamfer.
Particularly, spacing subassembly 30 can be for approximate cuboid structure, in a set of opposite face of cuboid, one of them face and the contact of shady face, another face is provided with the chamfer, and the chamfer can be the fillet. When laying the solder strip, under the guiding action of the chamfer, the solder strip can be smoothly embedded into the limit space formed by the limit component 30, and the problem of solder strip jamming is avoided.
Optionally, the size of the position-limiting element 301 is 1 μm to 100 μm in the vertical direction of the backlight surface.
Specifically, the size of the spacer 301 is 1 μm to 100 μm in the vertical direction of the backlight surface, that is, in the height direction of the main grid 20. The size of the limiting member 301 cannot be too large, which may affect the flatness of the surface of the battery piece, and may cause the problem of hidden crack of the battery piece. The size of the stopper 301 cannot be too small, and the stopper cannot limit the weld zone well. In the embodiment of the invention, the size of the limiting piece 301 is 1 μm-100 μm, which not only ensures the flatness of the surface of the battery piece, but also has a good limiting effect on the solder strip.
Optionally, the size of the stopper 301 along the width direction of the main gate 20 is 1 μm to 10 μm.
Specifically, the size of the stopper 301 is 1 μm to 10 μm in the width direction of the main gate 20. The size of the limiting member 301 cannot be too large, so that too much surface area of the cell is occupied, and other components are not convenient to arrange. The size of the stopper 301 cannot be too small, and the stopper cannot perform a good stopper function on the welding belt. In the embodiment of the invention, the size of the limiting part 301 is 1 μm-100 μm, which does not occupy too much surface area of the battery piece and can also have a good limiting effect on the solder strip.
The embodiment of the invention also provides an IBC battery component which comprises the IBC battery.
Specifically, the IBC cell assembly is a photovoltaic power generation unit formed by connecting a plurality of IBC cells in series by solder ribbons. IBC cells can be classified into P-type IBC and N-type IBC according to doping type. The P-type IBC refers to an IBC cell with a P-type (boron or gallium doped) silicon wafer substrate; the N-type IBC refers to an IBC cell with an N-type (phosphorus-doped) silicon wafer substrate.
In the embodiment of the invention, the IBC battery assembly adopts the IBC battery described above, and the IBC battery includes a silicon substrate 10, a main grid 20 and a limiting assembly 30; the main grid 20 is arranged on the backlight surface of the silicon substrate 10; the limiting components 30 are connected with the backlight surface, and the limiting components 30 are positioned on two sides of the main grid 20 along the length direction of the main grid; along the vertical direction of the backlight surface, the height of the limiting component 30 is greater than that of the main grid 20. Through set up spacing subassembly 30 in main bars 20 both sides, can form spacing space and carry out spacing fixed to the solder strip, promote the precision of counterpoint. The deviation between the welding strip and the main grid 20 can be avoided, so that the situation of short circuit of the IBC battery can be avoided, and the safety factor is improved.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. An IBC cell, comprising: the silicon substrate, the main grid and the limiting assembly;
the main grid is arranged on a backlight surface of the silicon substrate;
the limiting assemblies are connected with the backlight surface and are positioned on two sides of the main grid along the length direction of the main grid;
along the vertical direction of the backlight surface, the height of the limiting component is larger than that of the main grid.
2. The IBC cell of claim 1, wherein the spacing assembly is a continuous structure along the length of the main grid.
3. The IBC cell of claim 1, wherein the limiting assembly comprises a plurality of limiting members;
the limiting pieces are respectively connected with the backlight surface;
and the plurality of limiting parts are arranged at intervals along the length direction of the main grid.
4. The IBC cell of claim 3, wherein the stoppers are symmetrically distributed on both sides of the main grid along its length.
5. The IBC cell of claim 1, further comprising a plurality of bonding pads;
the bonding pads are arranged at intervals along the length direction of the main grid;
the limiting assembly is bent at the welding pad to form an avoiding space, and the welding pad is located in the avoiding space.
6. The IBC battery of claim 5, wherein a height of the retention component is greater than a height of the solder pad in a direction perpendicular to the backlight side.
7. The IBC battery of claim 1, wherein an end surface of the limiting component on a side facing away from the backlight surface is provided with a chamfer.
8. The IBC cell of claim 3, wherein the stopper has a dimension of 1-100 μm in a direction perpendicular to the backlight surface.
9. The IBC cell according to claim 3, wherein the stopper has a dimension of 1-10 μm in a width direction of the main gate.
10. An IBC cell assembly comprising an IBC cell according to any one of claims 1 to 9.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN117133815A (en) * | 2023-09-21 | 2023-11-28 | 安徽华晟新能源科技有限公司 | Solar cell, preparation method thereof and solar cell module |
CN117238984A (en) * | 2023-11-14 | 2023-12-15 | 无锡华晟光伏科技有限公司 | Photovoltaic cell and photovoltaic module |
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2022
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117133815A (en) * | 2023-09-21 | 2023-11-28 | 安徽华晟新能源科技有限公司 | Solar cell, preparation method thereof and solar cell module |
CN117133815B (en) * | 2023-09-21 | 2024-03-15 | 安徽华晟新能源科技有限公司 | Solar cell, preparation method thereof and solar cell module |
CN117238984A (en) * | 2023-11-14 | 2023-12-15 | 无锡华晟光伏科技有限公司 | Photovoltaic cell and photovoltaic module |
CN117238984B (en) * | 2023-11-14 | 2024-03-29 | 无锡华晟光伏科技有限公司 | Photovoltaic cell and photovoltaic module |
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