CN115113676B - Reference circuit with temperature compensation function - Google Patents
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- CN115113676B CN115113676B CN202110291261.3A CN202110291261A CN115113676B CN 115113676 B CN115113676 B CN 115113676B CN 202110291261 A CN202110291261 A CN 202110291261A CN 115113676 B CN115113676 B CN 115113676B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a reference circuit with a temperature compensation function, wherein a current output circuit is designed to receive the reference voltage of a bias voltage generating circuit, generate two reference currents with opposite temperature variation characteristics, and then combine the two reference currents into an accurate current with a compensation temperature variation effect. In addition, the voltage output circuit is designed to receive the reference voltage of the bias voltage generating circuit, wherein the reference voltage comprises a plurality of field effect transistors which are all operated in a saturation region, the accurate voltage is enabled to rise along with the threshold voltage of the field effect transistors to compensate the temperature variation effect, and a resistor can be added or the size of the related field effect transistor can be adjusted to adjust the voltage value and the temperature variation characteristic of the output current and the output voltage.
Description
Technical Field
The present invention relates to a reference circuit, and more particularly to a reference circuit with temperature compensation function, which outputs stable voltage and current values when temperature changes.
Background
The reference circuit is widely used in various electronic devices for providing accurate voltage or current, for example, the comparator needs accurate reference voltage as a comparison standard, or the design of high-speed input/output circuit, USB interface and SATA interface all need to utilize accurate reference voltage and reference current for impedance matching. The ideal reference voltage and reference current are stable and will not change with the process, temperature and power supply voltage, and the smaller the power consumption of the reference circuit is, the better.
In taiwan patent No. I367412, a reference circuit for providing accurate voltage and accurate current simultaneously is disclosed, and the temperature variation effect is compensated by using a bandgap voltage reference circuit, a positive temperature coefficient correction circuit, a threshold voltage superposition circuit and an accurate current generation circuit. However, the bandgap reference circuit requires Bipolar Junction Transistors (BJTs) that consume more power than field effect transistors, and the positive temperature coefficient correction circuit includes an operational amplifier that requires a larger circuit area to implement.
In taiwan patent No. I485546, a reference circuit for providing accurate voltage is disclosed, which is formed by combining a plurality of field effect transistors and two resistors. However, no accurate current is provided, and a resistor is directly connected between the output voltage and ground, so that a large resistance value or current value is required to output an accurate voltage with a higher voltage value, which increases the circuit area or power consumption and introduces more noise interference.
In taiwan patent No. I521325, a reference circuit for providing accurate voltage and accurate current is disclosed, which is formed by combining a plurality of field effect transistors and three resistors. However, the precision voltage and the precision current cannot be adjusted separately. In addition, the same disadvantage as the taiwan patent No. I485546 is that a resistor is directly connected between the output voltage and the ground, and a large resistance value or current value is required to output the accurate voltage with a higher voltage value, so that the circuit area or power consumption is increased, and more noise interference is introduced. Based on the above-mentioned problems, the present invention provides a reference circuit capable of generating accurate voltage and accurate current simultaneously, and adjusting the values and temperature variation characteristics of the accurate voltage and accurate current respectively, and also has the advantages of saving circuit area and low power.
Disclosure of Invention
The invention discloses an accurate current reference circuit with a temperature compensation function, which is connected to a power supply and comprises a bias voltage generating circuit and a current output circuit. The bias voltage generating circuit is used for generating a first reference voltage and a second reference voltage, the current output circuit receives the first reference voltage by utilizing a field effect transistor, generates a first reference current with temperature variation characteristics consistent with the current of the bias voltage generating circuit, and receives the second reference voltage by utilizing a plurality of field effect transistors and a resistor, wherein the field effect transistors are all operated in a saturation region, and generate a second reference current, so that the current value of the second reference current and the threshold voltage of the field effect transistor are positively correlated, and the temperature variation characteristics are opposite to the current of the bias voltage generating circuit. The first reference current and the second reference current are combined into the accurate current, and the effect of compensating the temperature variation effect is achieved.
The above-mentioned accurate current reference circuit with temperature compensation function, wherein the bias voltage generating circuit comprises: a first resistor, one end of which is grounded; a first N-type field effect transistor having a source connected to the other end of the first resistor; a second NFET having a source connected to ground and having a gate and a drain both connected to the gate of the first NFET; a third NFET having a source connected to the drain of the first NFET; a fourth NFET having a source grounded and having a gate and a drain both connected to the gate of the third NFET; a first PFET having a source connected to the power source and having a gate and a drain both connected to the drain of the third NFET; a second PFET having a source connected to the power source, a gate connected to the gate of the first PFET, and a drain connected to the drain of the fourth NFET; the voltage of the gate electrode of the first PFET is the first reference voltage, and the voltage of the gate electrode of the third NFET is the second reference voltage.
The above-mentioned accurate current reference circuit with temperature compensation function, wherein the current output circuit comprises: a fifth PFET having a source connected to the power supply, a gate connected to the first reference voltage, and a drain generating a first reference current; a sixth NFET having a gate connected to the second reference voltage; a second resistor with one end grounded and the other end connected to the source of the sixth N-type field effect transistor; a sixth PFET having a source connected to the power source, a gate and a drain both connected to the drain of the sixth NFET; a seventh PFET having a source connected to the power supply, a gate connected to the gate of the sixth PFET, and a drain generating a second reference current and connected to the drain of the fifth PFET.
The size of the fifth, sixth or seventh pfets may be changed to adjust the first or second reference currents and to adjust the magnitude and temperature variation characteristics of the accurate current.
The accurate current reference circuit with the temperature compensation function further comprises a voltage output circuit for outputting accurate voltage, wherein the voltage output circuit comprises a plurality of field effect transistors, and the field effect transistors are used for receiving the first reference voltage or the second reference voltage to generate the accurate voltage; the field effect transistors are all operated in a saturation region, and the accurate voltage rises along with the threshold voltage of the field effect transistors so as to compensate the temperature variation effect.
The above-mentioned accurate current and accurate voltage reference circuit with temperature compensation function, the voltage output circuit includes: an eighth PFET having a source connected to the power supply and a gate connected to the first reference voltage; an eighth NFET having a source grounded, a gate and a drain both connected to the drain of the eighth PFET, and the junction between the eighth PFET and the eighth NFET being used as the precision voltage; the eighth NFET may be replaced by a ninth PFET having a source connected to the drain of the eighth PFET, a gate and a drain both connected to ground.
The above-mentioned accurate current and accurate voltage reference circuit with temperature compensation function, wherein the voltage output circuit further comprises a third resistor connected between the eighth PFET and the eighth NFET, or between the eighth PFET and the ninth PFET, or between the gate and drain of the eighth NFET, and the resistance value of the third resistor, the size of the eighth NFET, or the size of the ninth PFET can be adjusted to change the voltage value of the accurate voltage.
The invention discloses an accurate voltage reference circuit with a temperature compensation function, which comprises a bias voltage generating circuit for generating a first reference voltage; a voltage output circuit, which comprises a plurality of field effect transistors, receives the first reference voltage and generates the accurate voltage; the field effect transistors are all operated in a saturation region, and the accurate voltage rises along with the threshold voltage of the field effect transistors so as to compensate the temperature variation effect.
The above-mentioned accurate voltage reference circuit with temperature compensation function, wherein the bias voltage generating circuit comprises: a first resistor, one end of which is grounded; a first N-type field effect transistor having a source connected to the other end of the first resistor and having a gate and a drain; a second NFET having a source connected to ground and having a gate and a drain both connected to the gate of the first NFET; a first PFET having a source connected to the power source and having a gate and a drain both connected to the drain of the first NFET; a second PFET having a source connected to the power source, a gate connected to the gate of the first PFET, and a drain connected to the drain of the second NFET, wherein the gate voltage of one of the PFETs is the first reference voltage.
The above-mentioned accurate voltage reference circuit with temperature compensation function, wherein the bias voltage generating circuit further comprises: a third NFET having a source and a drain connected between the first NFET and the first PFET; a fourth NFET having a source and a drain connected between the second NFET and the second PFET, and having a gate connected to the drain of the second PFET and the gate of the third NFET.
The above-mentioned accurate voltage reference circuit with temperature compensation function, this voltage output circuit includes: an eighth PFET having a source connected to the power supply and a gate connected to the first reference voltage; an eighth NFET having a source grounded, a gate and a drain both connected to the drain of the eighth PFET, and the junction between the eighth PFET and the eighth NFET being used as the precision voltage; the eighth NFET may be replaced by a ninth PFET having a source connected to the drain of the eighth PFET, a gate and a drain both connected to ground.
The voltage output circuit further comprises a third resistor connected between the eighth P-type field effect transistor and the eighth N-type field effect transistor, or between the eighth P-type field effect transistor and the ninth P-type field effect transistor, or between the gate and the drain of the eighth N-type field effect transistor, and the voltage value of the accurate voltage can be changed by adjusting the resistance value of the third resistor, the size of the eighth N-type field effect transistor, or the size of the ninth P-type field effect transistor.
The reference circuit with temperature compensation function has the advantages of good power supply voltage rejection ratio (PSRR) compared with the prior art, namely, when the power supply is interfered by noise, the variation of the output reference voltage is smaller; in addition, the voltage regulator has a wide power supply voltage operation range, can operate in the range of 1.8V to 5.5V which are commonly used, and can adjust the output reference voltage and the reference current, for example, the commonly used reference voltage is 1.2V, and the output reference voltage can also be adjusted to be near the threshold voltage (Vth) of the field effect transistor. In addition, the structure can be realized by only using a field effect transistor, and compared with the prior art requiring a Bipolar Junction Transistor (BJT), the structure has simpler manufacturing process and can save the circuit area and the power consumption.
Extracting and compiling part of characteristics of the invention; other features will be described in subsequent paragraphs. It is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims.
Drawings
FIG. 1 is a schematic diagram of a precise current reference circuit with temperature compensation according to a first embodiment of the present invention.
FIG. 2 shows a schematic diagram of a precision current and precision voltage reference circuit with temperature compensation.
FIG. 3 shows a structure of an accurate voltage reference circuit with temperature compensation function.
FIG. 4 shows another aspect of the voltage output circuit of FIG. 3.
FIG. 5 shows another aspect of the voltage output circuit of FIG. 3.
FIG. 6 shows another aspect of the voltage output circuit of FIG. 4.
FIG. 7 shows another aspect of the bias generation circuit of FIG. 3.
Reference numerals illustrate: 10-a bias voltage generating circuit; 20-a current output circuit; 30-a voltage output circuit; mn 1-first N-type field effect transistor; mn 2-second N-type field effect transistor; mn 3-third N-type field effect transistor; mn 4-fourth N-type field effect transistor; mn 5-fifth N-type field effect transistor; mn 6-sixth N-type field effect transistor; mn 7-seventh N-type field effect transistor; mn 8-eighth N-type field effect transistor; mp 1-first P-type field effect transistor; mp 2-second P-type field effect transistor; mp 3-third P-type field effect transistor; mp 4-fourth P-type field effect transistor; mp 5-fifth P-type field effect transistor; mp 6-sixth P-type field effect transistor; mp 7-seventh P-type field effect transistor; mp 8-eighth P-type field effect transistor; mp 9-ninth P-type field effect transistor; r1-a first resistor; r2-a second resistor; r3-third resistor.
Detailed Description
The present invention will be more specifically described with reference to the following examples. Note that the following description of embodiments of the present invention is merely for descriptive purposes; it is not intended to be exhaustive or to limit the invention to the precise form disclosed.
Referring to fig. 1, an accurate current reference circuit with temperature compensation function is shown in a first embodiment of the present invention, which comprises a bias voltage generating circuit 10 and a current output circuit 20. The bias voltage generating circuit 10 is used for generating a first reference voltage Vref1 and a second reference voltage Vref2. The current output circuit 20 receives the first reference voltage Vref1 by a field effect transistor (fifth pft Mp 5), generates a first reference current Iref1 having a temperature variation characteristic consistent with the current of the bias voltage generating circuit 10, and receives the second reference voltage Vref1 by a plurality of pfts (sixth pft Mp6, seventh pft Mp7, sixth pft Mn 6) and a second resistor R2. The field effect transistors are all operated in the saturation region and generate a second reference current Iref2 such that the current value of the second reference current Iref2 and the threshold voltage (Vth) of the field effect transistor are positively correlated, and the temperature variation characteristic is opposite to the current of the bias voltage generating circuit 10. The first reference current Iref1 and the second reference current Iref2 are combined into the accurate current Icomp, and have the effect of compensating the temperature variation effect.
The above-mentioned accurate current reference circuit with temperature compensation function, wherein the bias voltage generating circuit 10 comprises: a first resistor R1, one end of which is grounded; a first N-type field effect transistor Mn1 having a source connected to the other end of the first resistor R1; a second N-type field effect transistor Mn2 having a source grounded and having a gate and a drain both connected to the gate of the first N-type field effect transistor Mn 1; a third N-type field effect transistor Mn3 having a source connected to the drain of the first N-type field effect transistor Mn 1; a fourth N-type field effect transistor Mn4 having a source grounded and having a gate and a drain both connected to the gate of the third N-type field effect transistor Mn 3; a first PFET Mp1 having a source connected to the power source and having a gate and a drain both connected to the drain of the third NFET Mn 3; a second P-type field effect transistor Mp2 having a source connected to the power source, a gate connected to the gate of the first P-type field effect transistor Mp1, and a drain connected to the drain of the fourth N-type field effect transistor Mn 4. The voltage of the gate of the first P-type field effect transistor Mp1 is the first reference voltage Vref1, and the voltage of the gate of the third N-type field effect transistor Mn3 is the second reference voltage.
The above-mentioned accurate current reference circuit with temperature compensation function, wherein the current output circuit 20 comprises: a fifth P-type field effect transistor Mp5 having a source connected to the power supply, a gate connected to the first reference voltage Vref1, and a drain generating a first reference current Iref1; a sixth N-type field effect transistor Mn6 having a gate connected to the second reference voltage Vref2; a second resistor R2 having one end grounded and the other end connected to the source of the sixth N-type field effect transistor Mn 6; a sixth P-type field effect transistor Mp6 having a source connected to the power source, a gate and a drain both connected to the drain of the sixth N-type field effect transistor Mn 6; a seventh PFET Mp7 having a source connected to the power supply, a gate connected to the gate of the sixth PFET Mp6, and a drain generating a second reference current Iref2 and connected to the drain of the fifth PFET Mp 5.
In the above-mentioned precise current reference circuit with temperature compensation function, the current of the fifth P-type field effect transistor Mp5 is the first reference current Iref1, and the current of the bias voltage generating circuit 10 has temperature variation characteristics that the current value increases with the temperature rise; the current of the sixth N-type field effect transistor Mn6 is the same as the current of the second resistor R2, denoted IR2, with the relation: vgsn1+vgsn3=vgsn6+ (IR 2R 2), where VGSN1 is the voltage between the gate and the source of the first N-type field effect transistor Mn1, and so on. The above relation can be organized as: in the case of "IR 2= (vgsn1+vgsn3-VGSN 6)/R2", VGSN1, VGSN3 and VGSN6 are all positively correlated with the threshold voltage (Vth) of the fet under the condition that other parameters are constant, but the threshold voltage (Vth) has a temperature variation characteristic that decreases with increasing temperature, so the current IR2 of the sixth N-type fet Mn6 and the second resistor R2 also has a temperature variation characteristic that decreases with increasing temperature, so that the currents of the sixth P-type fet Mp6 and the seventh P-type fet Mp7 (i.e., the second reference current Iref 2) also have a temperature variation characteristic that decreases with increasing temperature. In summary, the first reference current Iref1 and the second reference current Iref2 have opposite temperature variation characteristics, so that the precise current Icomp generated by the summation has the effect of compensating the temperature variation.
The size of the fifth pft Mp5, the sixth pft Mp6 or the seventh pft Mp7 can be changed, the size of the first reference current Iref1 or the second reference current Iref2 can be adjusted, and the size and the temperature variation characteristic of the accurate current Icomp can be adjusted.
The accurate current reference circuit with temperature compensation function further includes a voltage output circuit 30 for outputting the accurate voltage Vcomp, see FIG. 2. The voltage output circuit 30 includes a plurality of field effect transistors (eighth P-type field effect transistor Mp8 and eighth N-type field effect transistor Mn 8), and receives the first reference voltage Vref1 to generate the precise voltage Vcomp; the plurality of field effect transistors are all operated in a saturation region, and the accurate voltage Vcomp compensates for a temperature variation effect along with the rising of the threshold voltage (Vth) of the plurality of field effect transistors.
The voltage output circuit 30 described above first considers the condition (r3=0) of adding the third resistor R3, and the accurate voltage Vcomp is the voltage difference VGSN8 between the gate and the source of the eighth N-type field effect transistor Mn8, and the voltage value thereof is positively correlated with the current of the bias voltage generating circuit 10 and the threshold voltage (Vth) of the field effect transistor. Since the current of the bias voltage generating circuit 10 has a temperature variation characteristic that increases with an increase in temperature, and the threshold voltage (Vth) of the field effect transistor has a temperature variation characteristic that decreases with an increase in temperature, the temperature variation characteristic can be compensated by adding the physical quantities of the two opposite temperature variation characteristics. The third resistor R3 is added to adjust the voltage value of the precise voltage Vcomp.
Referring to fig. 3, an accurate voltage reference circuit with temperature compensation function is shown in a third embodiment of the present invention, which includes a bias voltage generating circuit 10 and a voltage output circuit 30. The bias voltage generating circuit 10 and the voltage output circuit 30 are the same as those of fig. 2, which is a diagram for explaining that the precise voltage Vcomp and the precise current Icomp can be respectively designed and adjusted, and based on the architecture of the diagram, various variations of the voltage output circuit 30 are explained.
Fig. 4 shows another aspect of the voltage output circuit 30 of fig. 3, in which the difference between the fig. 3 and the fig. 3 is that the positions of the eighth N-type field effect transistor Mn8 and the third resistor R3 are interchanged, and the precise voltage Vcomp also has the effect of compensating the temperature variation characteristic.
Fig. 5 shows another aspect of the voltage output circuit 30 of fig. 3, in which the difference between the eighth N-type field effect transistor Mn8 and the third resistor R3 is that the source of the eighth N-type field effect transistor Mn8 is grounded, the gate is connected to the drain of the eighth P-type field effect transistor Mp8, the drain is connected to one end of the third resistor R3, the other end of the third resistor R3 is connected to the gate of the eighth N-type field effect transistor Mn8, and the accurate voltage Vcomp is connected from the drain of the eighth N-type field effect transistor Mn 8.
Fig. 6 shows another aspect of the voltage output circuit 30 of fig. 4, in which the difference between the fig. 4 and the fig. 4 is that the eighth fet Mn8 is replaced by a ninth fet Mp9, the source of the ninth fet Mp9 is connected to the drain of the eighth fet Mp8, the gate and drain are connected to one end of the third resistor R3, and the ninth fet Mp9 and the third resistor R3 can be interchanged, so that the above connection method can make the accurate voltage Vcomp have the effect of compensating the temperature variation.
FIG. 7 illustrates another aspect of the bias generation circuit 10 of FIG. 3. Wherein the bias voltage generating circuit 10 comprises: a first resistor R1, one end of which is grounded; a first N-type field effect transistor Mn1 having a source connected to the other end of the first resistor R1, and having a gate and a drain; a second N-type field effect transistor Mn2 having a source grounded and having a gate and a drain both connected to the gate of the first N-type field effect transistor Mn 1; a first PFET Mp1 having a source connected to a power source and having a gate and a drain both connected to the drain of the first NFET Mn 1; a second PFET Mp2 having a source connected to the power source, a gate connected to the gate of the first PFET Mp1, and a drain connected to the drain of the second NFET Mn2, wherein the gate voltage of the first PFET Mp1 is the first reference voltage Vref1.
The voltage output circuit 30 can adjust the resistance of the third resistor R3, the size of the eighth N-type field effect transistor Mn8, or the size of the ninth P-type field effect transistor Mp9 to change the voltage value of the precise voltage Vcomp.
Although the present invention has been described with reference to the above embodiments, it should be understood that the invention is not limited thereto, but rather is capable of modification and variation without departing from the spirit and scope of the present invention.
Claims (11)
1. A reference circuit with temperature compensation function, connected to a power source, comprising:
a bias voltage generating circuit for generating a first reference voltage and a second reference voltage;
a current output circuit for receiving the first reference voltage by using a field effect transistor, generating a first reference current with temperature variation characteristics consistent with the current of the bias voltage generating circuit, and receiving the second reference voltage by using a plurality of field effect transistors and a resistor, wherein the field effect transistors are all operated in a saturation region and generate a second reference current, so that the current value of the second reference current and the threshold voltage of the field effect transistor are positively correlated, and the temperature variation characteristics are opposite to the current of the bias voltage generating circuit; the first reference current and the second reference current are combined into a precise current, and have the effect of compensating the temperature variation effect,
wherein the bias voltage generating circuit comprises:
a first resistor, one end of which is grounded;
a first N-type field effect transistor having a source connected to the other end of the first resistor;
a second NFET having a source connected to ground and having a gate and a drain both connected to the gate of the first NFET;
a third NFET having a source connected to the drain of the first NFET;
a fourth NFET having a source connected to the drain of the second NFET and having a gate and a drain both connected to the gate of the third NFET;
a first PFET having a source connected to the power source and having a gate and a drain both connected to the drain of the third NFET; and
a second PFET having a source connected to the power source, a gate connected to the gate of the first PFET, and a drain connected to the drain of the fourth NFET; the voltage of the gate electrode of the first PFET is the first reference voltage, and the voltage of the gate electrode of the third NFET is the second reference voltage.
2. The reference circuit of claim 1, wherein the current output circuit comprises:
a fifth PFET having a source connected to the power supply, a gate connected to the first reference voltage, and a drain generating a first reference current;
a sixth NFET having a gate connected to the second reference voltage;
a second resistor with one end grounded and the other end connected to the source of the sixth N-type field effect transistor;
a sixth PFET having a source connected to the power source, a gate and a drain both connected to the drain of the sixth NFET; and
a seventh PFET having a source connected to the power supply, a gate connected to the gate of the sixth PFET, and a drain generating a second reference current and connected to the drain of the fifth PFET.
3. The reference circuit of claim 2, wherein the size of the fifth, sixth, or seventh PFET can be varied, the magnitude of the first or second reference currents adjusted, and the magnitude and temperature variation characteristics of the precision current adjusted.
4. The reference circuit of claim 1, further comprising a voltage output circuit comprising a plurality of field effect transistors for receiving the first reference voltage or the second reference voltage to generate a precision voltage; the field effect transistors are all operated in a saturation region, and the accurate voltage is increased along with the threshold voltage of the field effect transistors to compensate the temperature variation effect.
5. The reference circuit of claim 4 wherein the voltage output circuit comprises:
an eighth PFET having a source connected to the power supply and a gate connected to the first reference voltage; and
an eighth NFET having a source grounded, a gate and a drain both connected to the drain of the eighth PFET, and the junction between the eighth PFET and the eighth NFET being used as the precision voltage.
6. The reference circuit of claim 5, wherein the voltage output circuit further comprises a third resistor connected between the eighth PFET and the eighth NFET or between the gate and drain of the eighth NFET, and the resistance of the third resistor and the size of the eighth NFET can be adjusted to change the voltage value of the precision voltage.
7. The reference circuit of claim 4 wherein the voltage output circuit comprises:
an eighth PFET having a source connected to the power supply and a gate connected to the first reference voltage; and
a ninth PFET having a source connected to the drain of the eighth PFET, a gate and a drain both connected to ground.
8. The reference circuit of claim 7, wherein the voltage output circuit further comprises a third resistor connected between the eighth and ninth PFETs, and capable of adjusting the resistance of the third resistor and the size of the ninth PFET to change the voltage value of the precision voltage.
9. A reference circuit with temperature compensation function, connected to a power source, comprising:
a bias voltage generating circuit for generating a first reference voltage; and
a voltage output circuit for receiving the first reference voltage and generating an accurate voltage, the voltage output circuit comprising:
an eighth PFET having a source connected to the power supply and a gate connected to the first reference voltage;
an eighth NFET having a source grounded and a gate connected to the drain of the eighth PFET; and
and a third resistor connected between the gate and drain of the eighth NFET, wherein the drain of the eighth NFET is used as the accurate voltage, and the resistance value of the third resistor and the size of the eighth NFET are adjusted to change the voltage value of the accurate voltage, wherein the eighth PFET and the eighth NFET are both operated in a saturation region, and the accurate voltage rises along with the threshold voltages of the eighth PFET and the eighth NFET to compensate the temperature variation effect.
10. The reference circuit of claim 9, wherein the bias generation circuit comprises:
a first resistor, one end of which is grounded;
a first N-type field effect transistor having a source connected to the other end of the first resistor and having a gate and a drain;
a second NFET having a source connected to ground and having a gate and a drain both connected to the gate of the first NFET;
a first PFET having a source connected to the power source and having a gate and a drain both connected to the drain of the first NFET; and
the second PFET has a source connected to the power source, a gate connected to the gate of the first PFET, and a drain connected to the drain of the second NFET, wherein the gate voltage of one of the first NFET, the second NFET, the first PFET and the second PFET is the first reference voltage.
11. The reference circuit of claim 10, wherein the bias generation circuit further comprises:
a third NFET having a source and a drain connected between the first NFET and the first PFET; and
a fourth NFET having a source and a drain connected between the second NFET and the second PFET, and having a gate connected to the drain of the second PFET and the gate of the third NFET.
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