CN115110023A - Film coating method for surface of touch screen - Google Patents
Film coating method for surface of touch screen Download PDFInfo
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- CN115110023A CN115110023A CN202110311799.6A CN202110311799A CN115110023A CN 115110023 A CN115110023 A CN 115110023A CN 202110311799 A CN202110311799 A CN 202110311799A CN 115110023 A CN115110023 A CN 115110023A
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000007888 film coating Substances 0.000 title abstract description 6
- 238000009501 film coating Methods 0.000 title abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims abstract description 40
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000004140 cleaning Methods 0.000 claims abstract description 34
- 230000007704 transition Effects 0.000 claims abstract description 34
- 239000011737 fluorine Substances 0.000 claims abstract description 30
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 30
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 24
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052786 argon Inorganic materials 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 238000001035 drying Methods 0.000 claims abstract description 15
- 238000000992 sputter etching Methods 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- -1 fluorine ions Chemical class 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 40
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 abstract description 11
- 230000002209 hydrophobic effect Effects 0.000 abstract description 6
- 238000002834 transmittance Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical group CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OTYYBJNSLLBAGE-UHFFFAOYSA-N CN1C(CCC1)=O.[N] Chemical compound CN1C(CCC1)=O.[N] OTYYBJNSLLBAGE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000006058 strengthened glass Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a film coating method for the surface of a touch screen, which comprises the following steps: pre-cleaning a base material of the touch screen, and drying; placing the dried base material into a vacuum chamber, and etching and cleaning the base material by adopting an ion beam etching method; starting a silicon target, sputtering for a preset time length, and depositing a transition layer on the surface of the etched and cleaned base material; introducing argon into the vacuum chamber, controlling the air pressure in the vacuum chamber to be 2-5 Pa, applying current and voltage on the base material, and performing ion etching on the surface of the transition layer; controlling the air pressure in the vacuum chamber to be 2.5X 10 ‑4 Pa, using radio-frequency chemical vapor phaseA deposition method, wherein fluorine ions are doped on the surface of the transition layer by zero bias voltage, and a fluorine-containing doping layer is correspondingly formed; wherein the doping gas is CF 4. The invention can improve the binding force between the film and the base material by increasing the transition layer, and the protective film has high hardness, scratch resistance, wear resistance, high contact angle, good hydrophobic and oleophobic properties, high light transmittance and ultrathin thickness.
Description
Technical Field
The invention relates to the technical field of thin film materials, in particular to a film coating method for the surface of a touch screen.
Background
Touch screens of electronic devices such as mobile phones and flat panels are low in hardness, and are easily scratched and abraded by keys or hard objects such as sand in the environment in daily use and carrying processes, so that scratches are left and even directly fail; in addition, in frequent touch use, grease and fingerprints on the skin of a user are easy to remain on the surface of the touch screen, which affects the visual definition and the picture effect of the touch screen, thereby reducing the pleasure of the user experience.
In order to solve the above problems, it is effective to cover a uniform and dense protective film on the surface of the touch screen, and the protective film needs to have the following four characteristics: (1) the adhesive has good bonding force with a base material; (2) high hardness, scratch resistance and wear resistance; (3) high contact angle, good hydrophobic and oleophobic property; (4) however, although the technical solution provided by the prior art can plate a protective film on the surface of the substrate, the above four characteristics cannot be satisfied at the same time.
Disclosure of Invention
The technical problem to be solved by the embodiments of the present invention is to provide a method for coating a film on a surface of a touch screen, which can improve the bonding force between the film and a substrate by adding a transition layer, and the protective film has high hardness, scratch resistance, wear resistance, a high contact angle, good hydrophobic and oleophobic properties, high light transmittance and ultra-thin thickness.
In order to solve the above technical problem, an embodiment of the present invention provides a method for coating a film on a surface of a touch screen, including:
pre-cleaning a base material of the touch screen, and drying the pre-cleaned base material;
placing the dried base material into a vacuum chamber, and etching and cleaning the base material by adopting an ion beam etching method;
starting a silicon target, sputtering for a preset time length, and depositing a transition layer on the surface of the etched and cleaned base material; wherein the deposition rate is
The thickness of the transition layer is
Within the range;
introducing argon into the vacuum chamber, controlling the air pressure in the vacuum chamber to be 2-5 Pa, applying current and voltage on the base material, and performing ion etching on the surface of the transition layer; wherein the applied current is 5A, the applied voltage is 1500V-2000V, and the ion etching time is 200 s-300 s;
controlling the air pressure in the vacuum chamber to be 2.5X 10 -4 Pa, doping fluorine ions on the surface of the transition layer by adopting a radio frequency chemical vapor deposition method under zero bias voltage to correspondingly form a fluorine-containing doped layer; wherein the doping gas is CF4, the flow rate of CF4 is 80sccm, the ion energy is 200eV, and the ion beam density is 50 muA/cm 2 The deposition rate of fluorine is
The doping time was 15 min.
Further, the pre-cleaning of the substrate of the touch screen and the drying of the pre-cleaned substrate specifically include:
carrying out ultrasonic cleaning on a substrate of the touch screen; wherein, the cleaning solvent is NMP and IPA, and the ultrasonic cleaning time is 30 min;
and drying the substrate after ultrasonic cleaning.
Further, the step of placing the dried substrate into a vacuum chamber, and performing etching cleaning on the substrate by using an ion beam etching method includes:
placing the dried substrate in a vacuum chamber, and controlling the pressure in the vacuum chamber to 3.0 × 10 -3 Pa；
Introducing argon into the vacuum chamber, and etching and cleaning the base material by adopting an ion beam etching method when the air pressure in the vacuum chamber reaches 2-3 Pa; wherein the incidence angle of the argon ion beam is 30 degrees, the rotating speed of the base material is 20r/s, and the etching rate is
Further, the flow rate of argon gas introduced was 90 sccm.
Further, the etching cleaning time is 10 min.
Further, the preset time length is 100 s.
Compared with the prior art, the embodiment of the invention provides a film coating method for the surface of a touch screen, which comprises the following steps: pre-cleaning a base material of the touch screen, and drying the pre-cleaned base material; placing the dried base material into a vacuum chamber, and etching and cleaning the base material by adopting an ion beam etching method; starting a silicon target, sputtering for a preset time length, and depositing a transition layer on the surface of the etched and cleaned base material; wherein the deposition rate is
The thickness of the transition layer is within
Within the range; introducing argon into the vacuum chamber, controlling the air pressure in the vacuum chamber to be 2-5 Pa, applying current and voltage on the base material, and performing ion etching on the surface of the transition layer; wherein the applied current is 5A, the applied voltage is 1500V-2000V, and the ion etching time is 200 s-300 s; controlling the air pressure in the vacuum chamber to be 2.5 x 10 -4 Pa, doping fluorine ions on the surface of the transition layer by adopting a radio frequency chemical vapor deposition method under zero bias voltage to correspondingly form a fluorine-containing doped layer; wherein the doping gas is CF4, the flow rate of CF4 is 80sccm, the ion energy is 200eV, and the ion beam density is 50 muA/cm 2 The deposition rate of fluorine is
The doping time is 15 min; thereby can improve the cohesion of membrane and substrate through increasing the transition layer to the protection film has high hardness, prevents scraping wear-resisting, has high contact angle, and good hydrophobic oleophobic nature has high luminousness and ultra-thin thickness.
Drawings
Fig. 1 is a flowchart of a method for coating a surface of a touch screen according to a preferred embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a method for coating a touch screen surface, which is a flowchart of a preferred embodiment of the method for coating a touch screen surface provided by the present invention, as shown in fig. 1, and the method includes steps S11 to S15:
step S11, pre-cleaning the base material of the touch screen, and drying the pre-cleaned base material;
step S12, placing the dried base material into a vacuum chamber, and etching and cleaning the base material by adopting an ion beam etching method;
step S13, starting a silicon target, sputtering for a preset time length, and depositing a transition layer on the surface of the etched and cleaned base material; wherein the deposition rate is
The thickness of the transition layer is
Within the range;
step S14, introducing argon into the vacuum chamber, controlling the air pressure in the vacuum chamber to be 2 Pa-5 Pa, applying current and voltage on the base material, and carrying out ion etching on the surface of the transition layer; wherein, the applied current is 5A, the applied voltage is 1500V-2000V, and the ion etching time is 200 s-300 s;
step S15, controlling the air pressure in the vacuum chamber to be 2.5 multiplied by 10 -4 Pa, doping fluorine ions on the surface of the transition layer by adopting a radio frequency chemical vapor deposition method under zero bias to correspondingly form a fluorine-containing doped layer; wherein the doping gas is CF4, the flow rate of CF4 is 80sccm, the ion energy is 200eV, and the ion beam density is 50 muA/cm 2 The deposition rate of fluorine is
The doping time was 15 min.
As a modification of the above, the flow of argon was introduced at 90 sccm.
As a modification of the above, the preset time period is 100 s.
In specific implementation, firstly, pre-cleaning a substrate of a touch screen to be coated, and drying the pre-cleaned substrate; then, putting the dried base material into a vacuum chamber, and etching and cleaning the dried base material by adopting an ion beam etching method; then, starting the silicon target, sputtering the silicon target for a preset time (preferably 100 seconds), stabilizing the generated silicon ion beam, and depositing a transition layer on the surface of the substrate after etching and cleaning, wherein the deposition rate of the silicon is
The thickness of the deposited transition layer is within
Within the range; then, introducing argon gas into the vacuum chamber at a flow rate of 90sccm, controlling the air pressure in the vacuum chamber to be stabilized within a range of 2 Pa-5 Pa in a vacuumizing mode, applying 5A current and 1500V-2000V voltage on the base material, and performing ion etching on the surface of the transition layer, wherein the duration time of the ion etching is within a range of 200 seconds-300 seconds, so that a rough surface is formed on the surface of the transition layer, and fluorine ions in the next step are better attached to the surface of the transition layer; finally, the pressure in the vacuum chamber was controlled to 2.5X 10 -4 Pa, doping fluorine ions on the surface of the transition layer with zero bias by Radio Frequency Chemical Vapor Deposition (Radio Frequency Chemical Vapor Deposition), and forming a fluorine-containing doped layer correspondingly, wherein the doping gas is CF4, the flow rate of CF4 is 80sccm, the ion energy is 200eV, and the ion beam density is 50 μ A/cm 2 The deposition rate of fluorine is
In the range, the doping duration is 15 minutes.
The deposited transition layer is a silicon oxide protective film and mainly has the function of forming the transition layer between the base material and fluorine to increase the bonding force, otherwise, the fluorine is easy to fall off from the surface of the base material.
The current is applied to the substrate to draw the current, and glow discharge is formed on the surface of the protective film (in this case, the substrate and the protective film may be considered as a single body).
The fluorine-containing doping layer can improve the hydrophobic and oleophobic performance of the protective film, when fluorine ions are doped on the surface of the transition layer under zero bias, because CF4 is selected as the doping gas, a diamond-like film layer can be correspondingly formed on the surface of the transition layer in the actual deposition process, a fluorine-containing layer is doped on the surface of the diamond-like film layer, and fluorine is doped under zero bias, and the zero bias is selected to be only deposited without etching, so that the etching of the deposited diamond-like film layer by the fluorine ions can be avoided.
It should be noted that the substrate of the touch screen may be one of glass, strengthened glass, sapphire, ceramic, polymer, metal or metal oxide, and the like, and the substrate is usually made of a single material, and the composition is rarely selected; the transition layer may be one or a combination of materials of silicon (Si), silicon oxide (SiO2), silicon nitride (SiN), metallic titanium (Ti), chromium (Cr), copper (Cu), metal oxides thereof, and the like.
In another preferred embodiment, the pre-cleaning the substrate of the touch screen, and the drying the pre-cleaned substrate specifically include:
carrying out ultrasonic cleaning on a substrate of the touch screen; wherein, the cleaning solvent is NMP and IPA, and the ultrasonic cleaning time is 30 min;
and drying the substrate after ultrasonic cleaning.
Specifically, with reference to the above embodiment, during the pre-cleaning, the substrate of the touch screen is ultrasonically cleaned by using ultrasonic waves, NMP (nitrogen methyl pyrrolidone) and IPA (isopropyl alcohol) are used as cleaning solvents, the duration of the ultrasonic cleaning is 30 minutes, and then the substrate after the ultrasonic cleaning is subjected to a drying treatment, such as drying, or the substrate after the ultrasonic cleaning is placed in a sealed box and naturally dried for one hour.
In another preferred embodiment, the step of placing the dried substrate into a vacuum chamber and performing etching cleaning on the substrate by using an ion beam etching method specifically includes:
placing the dried substrate in a vacuum chamber, and controlling the pressure in the vacuum chamber to 3.0 × 10 -3 Pa；
Introducing argon into the vacuum chamber, and etching and cleaning the base material by adopting an ion beam etching method when the air pressure in the vacuum chamber reaches 2-3 Pa; wherein the incidence angle of the argon ion beam is 30 degrees, the rotating speed of the base material is 20r/s, and the etching rate is
As a modification of the above, the flow of argon was introduced at 90 sccm.
As an improvement of the scheme, the etching cleaning time is 10 min.
Specifically, in combination with the above embodiment, during the etching cleaning, the substrate after the drying treatment is placed in the vacuum chamber, and the vacuum in the vacuum chamber is pumped to 3.0 × 10 -3 Introducing argon into the vacuum chamber at a flow rate of 90sccm after Pa, cleaning the substrate by adopting an Ion Beam Etching (Ion Beam Etching) method when the air pressure in the vacuum chamber reaches a range of 2 Pa-3 Pa, and Etching the surface of the substrate by using the generated plasma under the argon atmosphere to achieve the purpose of cleaning, wherein the incident angle of the argon Ion Beam is 30 degrees, the rotating speed of the substrate is 20r/s, and the Etching rate is 20r/s
The duration of the etching cleaning is 10 min.
In summary, according to the film coating method for the surface of the touch screen provided by the embodiment of the invention, the bonding force between the film and the substrate can be improved by adding the transition layer between the substrate of the touch screen and the fluorine-containing doped layer; the fluorine-containing doped layer is used as a protective film of the outer layer, has high hardness, and is scratch-resistant and wear-resistant; in the fluorine doping process, the etching effect of fluorine ions on the deposited diamond-like carbon film is small, so that the fluorine-containing doping layer has a high contact angle and good hydrophobic and oleophobic properties; and the protective film plated on the surface of the base material has small light loss, high light transmittance (95%) and ultrathin thickness.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (6)
1. A method for coating a film on a surface of a touch screen is characterized by comprising the following steps:
pre-cleaning a base material of the touch screen, and drying the pre-cleaned base material;
placing the dried base material into a vacuum chamber, and etching and cleaning the base material by adopting an ion beam etching method;
starting a silicon target, sputtering for a preset time length, and depositing a transition layer on the surface of the etched and cleaned base material; wherein the deposition rate is
The thickness of the transition layer is within
Within the range;
introducing argon into the vacuum chamber, controlling the air pressure in the vacuum chamber to be 2-5 Pa, applying current and voltage on the base material, and performing ion etching on the surface of the transition layer; wherein the applied current is 5A, the applied voltage is 1500V-2000V, and the ion etching time is 200 s-300 s;
controlling the air pressure in the vacuum chamber to be 2.5X 10 -4 Pa, doping fluorine ions on the surface of the transition layer by adopting a radio frequency chemical vapor deposition method under zero bias voltage to correspondingly form a fluorine-containing doped layer; wherein the doping gas is CF4, the flow rate of CF4 is 80sccm, the ion energy is 200eV, and the ion beam density is 50 muA/cm 2 The deposition rate of fluorine is
The doping time was 15 min.
2. The method for coating a surface of a touch screen according to claim 1, wherein the pre-cleaning of the substrate of the touch screen and the drying of the pre-cleaned substrate comprise:
carrying out ultrasonic cleaning on a substrate of the touch screen; wherein, the cleaning solvent is NMP and IPA, and the ultrasonic cleaning time is 30 min;
and drying the substrate after ultrasonic cleaning.
3. The method for coating a surface of a touch screen according to claim 1, wherein the step of placing the dried substrate in a vacuum chamber and etching and cleaning the substrate by an ion beam etching method comprises:
placing the dried substrate in a vacuum chamber, and controlling the pressure in the vacuum chamber to 3.0 × 10 -3 Pa；
Introducing argon into the vacuum chamber, and etching and cleaning the base material by adopting an ion beam etching method when the air pressure in the vacuum chamber reaches 2-3 Pa; wherein the incidence angle of the argon ion beam is 30 degrees, the rotating speed of the base material is 20r/s, and the etching rate is
4. The method as claimed in any one of claims 1 to 3, wherein the flow of argon gas is 90 sccm.
5. The method for coating a surface of a touch screen according to any one of claims 1 to 3, wherein the etching cleaning time is 10 min.
6. The method as claimed in claim 1, wherein the predetermined time period is 100 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110311799.6A CN115110023A (en) | 2021-03-23 | 2021-03-23 | Film coating method for surface of touch screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110311799.6A CN115110023A (en) | 2021-03-23 | 2021-03-23 | Film coating method for surface of touch screen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115110023A true CN115110023A (en) | 2022-09-27 |
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| CN202110311799.6A Pending CN115110023A (en) | 2021-03-23 | 2021-03-23 | Film coating method for surface of touch screen |
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