CN115101613A - Amorphous silicon laminated solar cell and manufacturing method thereof - Google Patents
Amorphous silicon laminated solar cell and manufacturing method thereof Download PDFInfo
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- CN115101613A CN115101613A CN202211038151.7A CN202211038151A CN115101613A CN 115101613 A CN115101613 A CN 115101613A CN 202211038151 A CN202211038151 A CN 202211038151A CN 115101613 A CN115101613 A CN 115101613A
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 239000010410 layer Substances 0.000 claims abstract description 87
- 239000011521 glass Substances 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 77
- 238000006243 chemical reaction Methods 0.000 claims abstract description 40
- 239000011241 protective layer Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000004891 communication Methods 0.000 claims abstract description 13
- 238000005452 bending Methods 0.000 claims abstract description 7
- 238000009434 installation Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 15
- 238000005520 cutting process Methods 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 6
- -1 heating to be molten Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000003698 laser cutting Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 239000002313 adhesive film Substances 0.000 claims description 3
- 239000003431 cross linking reagent Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 210000000438 stratum basale Anatomy 0.000 claims 3
- 230000006872 improvement Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to the technical field of solar cells, in particular to an amorphous silicon tandem solar cell and a manufacturing method thereof. The photovoltaic cell comprises a substrate layer, a conversion layer and a protective layer, wherein the conversion layer is arranged on the top of the substrate layer, the protective layer is arranged on the top of the conversion layer, the conversion layer comprises a plurality of cell pieces and an amorphous silicon layer arranged between the cell pieces, a plurality of communication rods are arranged between the substrate layer and the protective layer, and the communication rods penetrate through the conversion layer. According to the invention, the relative position of the metal sheet and the transparent glass sheet can be kept unchanged through the communicating rod with two ends respectively clamped in the clamping grooves of the metal sheet and the transparent glass sheet, so that the overlarge position deviation of the metal sheet and the transparent glass sheet caused by the bending of the photovoltaic cell is avoided, and the tight fit of each component in the photovoltaic cell is ensured, thereby facilitating the change of the shape of the photovoltaic cell, facilitating the installation of a building roof in a complex environment and facilitating the application of the solar cell.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to an amorphous silicon tandem solar cell and a manufacturing method thereof.
Background
The solar cell is a device for generating power by using solar energy, the solar cell is a plurality of semiconductor photodiodes connected in series or in parallel, when sunlight irradiates on the photodiodes, the photodiodes can convert the solar energy into electric energy to generate current, the service life of the solar cell is long, the solar cell can be used for a long time by one-time investment as long as the sun exists, and the solar cell does not cause environmental pollution compared with thermal power generation and nuclear power generation.
The crystalline silicon solar cell is mainly made of silicon materials, the shape of the crystalline silicon solar cell is fixed and cannot be changed due to the forming structure of silicon, the construction difficulty and the cost for installing the solar cell on a building roof with a complex environment are high, and the application of the solar cell is not convenient to popularize, so that the amorphous silicon laminated solar cell and the manufacturing method thereof are provided.
Disclosure of Invention
The present invention is directed to an amorphous silicon tandem solar cell and a method for fabricating the same, so as to solve the problems mentioned in the background art.
In order to achieve the above object, the present invention provides an amorphous silicon tandem solar cell, including a photovoltaic cell, where the photovoltaic cell includes a substrate layer, a conversion layer and a protective layer, the conversion layer is disposed on the top of the substrate layer, the protective layer is disposed on the top of the conversion layer, the conversion layer includes a plurality of cell sheets and an amorphous silicon layer disposed between the cell sheets, a plurality of communication rods are disposed between the substrate layer and the protective layer, the communication rods penetrate through the conversion layer, and the conversion layer is configured to convert light energy into electrical energy.
As a further improvement of the technical scheme, the battery piece is a plurality of PN junction semiconductor substrates which are connected in series and provided with EVA battery adhesive films on the outer surfaces.
As a further improvement of the technical solution, the substrate layer includes a metal sheet, the protective layer includes a transparent glass sheet, and conductive films are disposed on the surfaces of the metal sheet and the transparent glass sheet, and the conductive films are in contact with the surface of the battery sheet.
As a further improvement of the technical scheme, the metal sheet and the transparent glass sheet are close to a clamping groove is formed in the surface of one side of the battery sheet, clamping heads are symmetrically arranged at the upper end and the lower end of the connecting rod, and the clamping heads are in clamping fit with the clamping groove.
As a further improvement of the technical scheme, a plurality of through grooves are formed in the surfaces of the metal sheet and the transparent glass sheet, which are close to one side of the battery sheet.
A method for fabricating an amorphous silicon tandem solar cell as described above, comprising the steps of:
s1, mixing the electrode and the glass adhesive to form plasma, respectively coating the plasma on the surfaces of the metal sheet and the transparent glass sheet in a screen printing mode, and drying the metal sheet and the transparent glass sheet to remove redundant liquid;
s2, forming a plurality of clamping grooves on the surfaces of the metal sheet and the transparent glass sheet, forming through grooves on the surfaces of the metal sheet and the transparent glass sheet at equal intervals, and plating a layer of conductive film on the surfaces of the metal sheet and the transparent glass sheet by a magnetron sputtering method;
s3, mixing the EVA rubber material with the cross-linking agent, heating to be molten, coating the molten EVA rubber material on the surface of the battery piece, and drying to form an EVA rubber film;
s4, sequentially stacking a plurality of battery pieces, positioning the four corners of each battery piece, inserting an amorphous silicon layer between every two adjacent battery pieces, positioning the four corners of each amorphous silicon layer, and aligning and bonding the battery pieces and the amorphous silicon layers up and down to form a conversion layer;
s5, placing the conversion layer between the metal sheet and the transparent glass sheet, rotating and moving the metal sheet and the transparent glass sheet, aligning the clamping grooves of the metal sheet with the clamping grooves of the transparent glass sheet and keeping the metal sheet and the transparent glass sheet on the same vertical surface, penetrating the communication rod through the conversion layer, respectively attaching the metal sheet and the transparent glass sheet to the upper surface and the lower surface of the conversion layer, and respectively clamping the clamping heads at the upper end and the lower end of the communication rod into the clamping grooves of the metal sheet and the transparent glass sheet to form the photovoltaic cell;
and S6, marking the surface of the photovoltaic cell, cutting the photovoltaic cell along the mark by laser, bending the cut photovoltaic cell, and keeping the bent shape.
As a further improvement of the present technical solution, in S1, the plasma screen printing method includes that the mesh of the printed screen pattern part penetrates through the paste, a scraper applies a certain pressure to the paste part of the screen, and the paste moves towards the other end of the screen, the paste is pressed onto the surfaces of the metal sheet and the transparent glass sheet from the mesh of the pattern part by the scraper during the movement, the print is fixed in a certain range due to the viscous action of the paste, the scraper is always in linear contact with the screen plate, the metal sheet and the transparent glass sheet during the printing, the contact line moves along with the movement of the scraper, thereby completing the printing process, and realizing the combined installation of the electrode, the metal sheet and the transparent glass sheet.
As a further improvement of the technical solution, in S2, the method for coating the amorphous silicon layer includes placing the metal sheet and the transparent glass sheet in a vacuum environment, filling a proper amount of argon gas, using a metal material as a target cathode, applying a direct current voltage of 200V or more between the target cathode and the metal sheet and the transparent glass sheet, ionizing the argon gas, accelerating and bombarding argon ions to the surface of the target cathode by the cathode, and sputtering atoms on the surface of the target cathode to deposit the atoms on the surfaces of the metal sheet and the transparent glass sheet to form a thin film.
As a further improvement of the technical scheme, in S4, the specific process of the vertical alignment and lamination includes firstly taking a picture with a looking-up camera, then taking a picture with a looking-down camera, respectively positioning four corners of the battery piece and the amorphous silicon layer, then performing alignment calculation, calculating the offset of the battery piece and the amorphous silicon layer, and correspondingly moving the battery piece and the amorphous silicon layer according to the offset, so that the battery piece and the amorphous silicon layer are aligned and laminated.
As a further improvement of the present invention, in S6, the cutting is performed by using a laser cutter in a way of marking the surface of the photovoltaic cell, and a high-pressure gas is blown onto the surface of the photovoltaic cell during the cutting.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the amorphous silicon laminated solar cell and the manufacturing method thereof, the connecting rod is clamped, so that when the photovoltaic cell is bent and deformed, clamping heads at two ends of the connecting rod are clamped in clamping grooves of the metal sheet and the transparent glass sheet respectively, the relative positions of the metal sheet and the transparent glass sheet are kept unchanged, the phenomenon that the position deviation of the metal sheet and the transparent glass sheet is too large due to the bending of the photovoltaic cell is avoided, and all parts in the photovoltaic cell are tightly attached is ensured.
2. According to the amorphous silicon laminated solar cell and the manufacturing method thereof, through the through grooves, the metal sheet and the transparent glass sheet can be bent conveniently, and when the photovoltaic cell is bent, the deformation parts of all the components in the photovoltaic cell can enter the through grooves along with the current, so that the situation that all the components in the photovoltaic cell are not attached due to deformation is avoided.
Drawings
FIG. 1 is an overall block diagram of the present invention;
FIG. 2 is an overall cross-sectional block diagram of the present invention;
FIG. 3 is a cross-sectional view of a base layer of the present invention;
FIG. 4 is a diagram of a translation layer structure according to the present invention;
FIG. 5 is a cross-sectional view of the protective layer of the present invention;
FIG. 6 is a view of the structure of the communication rod of the present invention;
FIG. 7 is a manufacturing flow chart of the present invention.
The various reference numbers in the figures mean:
1. a photovoltaic cell; 11. a base layer; 111. a metal sheet; 112. a conductive film; 113. a card slot; 114. a through groove; 12. a translation layer; 121. a battery piece; 122. an amorphous silicon layer; 13. a protective layer; 131. a transparent glass sheet; 14. a communication rod.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the equipment or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Example 1
Referring to fig. 1 to 7, an object of the present embodiment is to provide an amorphous silicon tandem solar cell, which includes a photovoltaic cell 1, the photovoltaic cell 1 includes a substrate layer 11, a conversion layer 12 and a protective layer 13, the conversion layer 12 is disposed on the top of the substrate layer 11, the protective layer 13 is disposed on the top of the conversion layer 12, the conversion layer 12 includes a plurality of cells 121 and an amorphous silicon layer 122 disposed between the cells 121, a plurality of connection rods 14 are disposed between the substrate layer 11 and the protective layer 13, the surfaces of the cells 121 and the amorphous silicon layer 122 are correspondingly formed with through holes, the connection rods 14 pass through the conversion layer 12, the conversion layer 12 is used for converting light energy into electrical energy, the connection rods 14 are used for maintaining the communication of carriers of the multi-layer cells 121, external sunlight penetrates into the conversion layer 12 through the protective layer 13, based on the photovoltaic effect of a semiconductor, when the sunlight irradiates the conversion layer 12, the conversion layer 12 absorbs light energy to generate a photo-generated electron-hole pair, under the action of a built-in electric field in the conversion layer 12, photo-generated electrons and holes are separated, the holes drift to the P side, electrons drift to the N side to form photo-generated electromotive force, the photo-generated electromotive force is opposite to the potential of the built-in electric field, when an external circuit is switched on, the maximum photocurrent is formed, and when a load is added to the external circuit, the photo-voltage and the photocurrent are maintained unchanged, so that solar energy is converted into electric energy and output.
When the photovoltaic cell is used specifically, external sunlight penetrates into the cell 121 through the transparent glass sheet 131, so that a photovoltaic effect is generated in the cell 121, a photoelectron-hole pair is generated in a PN junction of the cell 121, a photogenerated electromotive force and a built-in electric field are generated in the cell 121 due to the movement of a carrier, when the photovoltaic cell 1 is connected with an external load, electric energy can be continuously output, the cell 121 can be bent due to the serial strip-shaped structure of the cell 121, in addition, the through grooves 114 are formed in the metal sheet 111 and the inner surface of the transparent glass sheet 131, so that parts of the components inside the photovoltaic cell 1, which deform due to deflection, enter the through grooves 114 when the photovoltaic cell 1 is bent, and the relative positions of the metal sheet 111 and the transparent glass sheet 131 are unchanged through the clamped connecting rods 14, so that the bonding of the components in the photovoltaic cell 1 is ensured, and the corresponding adjustment of the shape of the photovoltaic cell 1 according to an installation environment is facilitated, facilitating the installation of the photovoltaic cell 1.
In this embodiment, the cell 121 is a plurality of PN junction semiconductor substrates connected in series and having an EVA film on the outer surface, the PN junction semiconductor substrates are in a strip structure, the cell 121 is configured as a plurality of strip PN junction semiconductor substrates connected in series so as to facilitate bending deformation of the cell 121, in addition, through the PN junction of the cell 121, when sunlight is incident into the cell 121, after the PN junction of the cell 121 forms a space charge region, an internal electric field is formed in the space charge region due to interaction between positive and negative charges, and this electric field will drift minority carrier holes in the N region to the P region, so that minority carrier electrons in the P region drift to the N region, the direction of drift motion is just opposite to the direction of diffusion motion, the holes drifting from the N region to the P region complement the holes lost in the P region on the original interface, the electrons drifting from the P region to the N region complement the electrons lost in the N region on the original interface, this reduces the space charge, weakens the internal electric field, narrows the space charge region as a result of drift motion, enhances diffusion motion, and seals the cell 121 by providing an EVA cell adhesive film on the surface of the cell 121 to improve the light transmittance of the cell 121.
The base layer 11 comprises a metal sheet 111, the protective layer 13 comprises a transparent glass sheet 131, the surfaces of the metal sheet 111 and the transparent glass sheet 131 are both provided with a conductive film 112, the conductive film 112 is in surface contact with the cell sheet 121, the conductive film 112 can be used as a transparent electrode of the cell sheet 121, the reflection of sunlight is reduced, and the conversion efficiency of the cell sheet 121 is improved.
The metal sheet 111 and the transparent glass sheet 131 are close to the surface of one side of the battery sheet 121, the clamping groove 113 is formed in a groove of a T-shaped cylinder, clamping heads are symmetrically arranged at the upper end and the lower end of the connecting rod 14 and are positioned in the T-shaped cylinder, the clamping heads are positioned in the clamping groove 113 and are in clamping fit with the clamping groove 113, the connecting rod 14 is provided with the clamping heads, so that the photovoltaic battery 1 is bent and deformed, the clamping heads at the two ends of the connecting rod 14 are respectively clamped in the clamping grooves 113 of the metal sheet 111 and the transparent glass sheet 131, the relative positions of the metal sheet 111 and the transparent glass sheet 131 are kept unchanged, the position deviation of the metal sheet 111 and the transparent glass sheet 131 caused by bending of the photovoltaic battery 1 is avoided to be too large, and all parts in the photovoltaic battery 1 are ensured to be tightly attached.
The metal sheet 111 and the transparent glass sheet 131 are close to the surface of one side of the battery piece 121 and are provided with a plurality of through grooves 114, the through grooves 114 are concave grooves, so that the metal sheet 111 and the transparent glass sheet 131 are bent, when the photovoltaic battery 1 is bent, the deformation parts of the parts in the photovoltaic battery 1 can enter the through grooves 114 in a homeotropic manner, and the parts in the photovoltaic battery 1, which are caused by deformation, are prevented from being not attached.
A method for fabricating an amorphous silicon tandem solar cell as described above, comprising the steps of:
s1, mixing the electrode and the glass adhesive to form plasma, respectively coating the plasma on the surfaces of the metal sheet 111 and the transparent glass sheet 131 in a screen printing mode, and drying the metal sheet 111 and the transparent glass sheet 131 to remove redundant liquid;
s2, forming a plurality of clamping grooves 113 on the surfaces of the metal sheet 111 and the transparent glass sheet 131, forming through grooves 114 on the surfaces of the metal sheet 111 and the transparent glass sheet 131 at equal intervals, and plating a conductive film 112 on the surfaces of the metal sheet 111 and the transparent glass sheet 131 by a magnetron sputtering method;
s3, mixing the EVA rubber material and the cross-linking agent, heating to be molten, coating the molten EVA rubber material on the surface of the battery piece 121, and drying to form an EVA rubber film;
s4, stacking the plurality of battery pieces 121 in sequence, positioning the battery pieces 121 at four corners, inserting the amorphous silicon layer 122 between the adjacent battery pieces 121, positioning the amorphous silicon layer 122 at four corners, and vertically aligning and bonding the battery pieces 121 and the amorphous silicon layer 122 to form the conversion layer 12;
s5, placing the conversion layer 12 between the metal sheet 111 and the transparent glass sheet 131, rotationally moving the metal sheet 111 and the transparent glass sheet 131, aligning the clamping grooves 113 of the metal sheet 111 with the clamping grooves 113 of the transparent glass sheet 131 and keeping the metal sheet and the transparent glass sheet on the same vertical plane, penetrating the communication rod 14 through the conversion layer 12, respectively attaching the metal sheet 111 and the transparent glass sheet 131 to the upper surface and the lower surface of the conversion layer 12, and respectively clamping the clamping heads at the upper end and the lower end of the communication rod 14 into the clamping grooves 113 of the metal sheet 111 and the transparent glass sheet 131 to form the photovoltaic cell 1;
and S6, marking the surface of the photovoltaic cell 1 according to the roof environment of the building, carrying out laser cutting along the mark, bending the cut photovoltaic cell 1, and keeping the bent shape to adapt to the roof environment of the building, thereby facilitating the installation.
In S1, the plasma screen printing method includes penetrating a paste through a mesh of a pattern portion of a screen to be printed, moving the screen toward the other end of the screen while applying a certain pressure to a paste portion of the screen by a squeegee, pressing the paste from the mesh of the pattern portion to surfaces of the metal plate 111 and the transparent glass plate 131 by the squeegee during the movement, fixing a print within a certain range due to the adhesive effect of the paste, wherein the squeegee is in linear contact with the screen plate and the metal plate 111 and the transparent glass plate 131 during the printing, and the contact line moves with the movement of the squeegee to complete a printing stroke, thereby realizing the combined mounting of the electrode with the metal plate 111 and the transparent glass plate 131.
In S2, the amorphous silicon layer 122 is coated by placing the metal sheet 111 and the transparent glass sheet 131 in a vacuum environment, charging a suitable amount of argon, using a metal material as a target cathode, applying a dc voltage of 200V or more between the target cathode and the metal sheet 111 and the transparent glass sheet 131, ionizing the argon, accelerating argon ions by the cathode and bombarding the surface of the target cathode, sputtering out atoms on the surface of the target cathode and depositing the atoms on the surfaces of the metal sheet 111 and the transparent glass sheet 131 to form a thin film, wherein the magnetron sputtering method has the advantages of strong bonding force between a plated film and a substrate, compact and uniform plated film, and the like.
In S4, the specific process of vertical alignment and lamination includes taking a picture with a downward camera, positioning the four corners of the cell 121 and the amorphous silicon layer 122, calculating the alignment, calculating the offset of the cell 121 and the amorphous silicon layer 122, and moving the cell 121 and the amorphous silicon layer 122 according to the offset to align and laminate the cell 121 and the amorphous silicon layer 122.
And S6, cutting the surface of the photovoltaic cell 1 by using a laser cutting machine in a way of marking the surface of the photovoltaic cell 1, blowing high-pressure gas to the surface of the photovoltaic cell 1 during cutting to blow vaporized debris and cool the cut part, and cutting by using the laser cutting machine, wherein the cut seam is narrow and has no cutting burr, and the processing precision is high without damaging the surface of the material.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. An amorphous silicon tandem solar cell, characterized in that: including photovoltaic cell (1), photovoltaic cell (1) includes stratum basale (11), conversion layer (12) and protective layer (13), stratum basale (11) top is equipped with conversion layer (12), conversion layer (12) top is equipped with protective layer (13), conversion layer (12) include a plurality of battery pieces (121) and set up amorphous silicon layer (122) between battery piece (121), stratum basale (11) with be equipped with a plurality of intercommunication stick (14) between protective layer (13), intercommunication stick (14) pass conversion layer (12), conversion layer (12) are used for converting light energy into electric energy.
2. The amorphous silicon tandem solar cell of claim 1 wherein: the battery pieces (121) are a plurality of PN junction semiconductor substrates which are connected in series and provided with EVA battery adhesive films on the outer surfaces.
3. The amorphous silicon tandem solar cell of claim 1, wherein: the base layer (11) comprises a metal sheet (111), the protective layer (13) comprises a transparent glass sheet (131), conductive films (112) are arranged on the surfaces of the metal sheet (111) and the transparent glass sheet (131), and the conductive films (112) are in surface contact with the battery sheet (121).
4. The amorphous silicon tandem solar cell of claim 3 wherein: the metal sheet (111) with clear glass piece (131) are close to draw-in groove (113) have been seted up to battery piece (121) one side surface, both ends symmetry is equipped with the dop about communicating bar (14), the dop with draw-in groove (113) joint cooperation.
5. The amorphous silicon tandem solar cell of claim 3, wherein: a plurality of through grooves (114) are formed in the surfaces of the metal sheet (111) and the transparent glass sheet (131) close to one side of the battery piece (121).
6. A method for fabricating an amorphous silicon tandem solar cell according to claims 1-5, comprising the steps of:
s1, mixing the electrode and the glass adhesive to form plasma, respectively coating the plasma on the surfaces of the metal sheet (111) and the transparent glass sheet (131) in a screen printing mode, and drying the metal sheet (111) and the transparent glass sheet (131) to remove redundant liquid;
s2, forming a plurality of clamping grooves (113) on the surfaces of the metal sheet (111) and the transparent glass sheet (131), forming through grooves (114) on the surfaces of the metal sheet (111) and the transparent glass sheet (131) at equal intervals, and plating a conductive film (112) on the surfaces of the metal sheet (111) and the transparent glass sheet (131) by a magnetron sputtering method;
s3, mixing the EVA rubber material with the cross-linking agent, heating to be molten, coating the molten EVA rubber material on the surface of the battery piece (121), and drying to form an EVA rubber film;
s4, sequentially stacking a plurality of battery pieces (121), positioning the four corners of each battery piece (121), inserting an amorphous silicon layer (122) between the adjacent battery pieces (121), positioning the four corners of each amorphous silicon layer (122), and aligning and bonding the battery pieces (121) and the amorphous silicon layers (122) up and down to form a conversion layer (12);
s5, placing the conversion layer (12) between the metal sheet (111) and the transparent glass sheet (131), rotationally moving the metal sheet (111) and the transparent glass sheet (131), aligning the clamping grooves (113) of the metal sheet (111) with the clamping grooves (113) of the transparent glass sheet (131) and keeping the metal sheet and the transparent glass sheet on the same vertical plane, penetrating the communication rod (14) through the conversion layer (12), respectively attaching the metal sheet (111) and the transparent glass sheet (131) to the upper surface and the lower surface of the conversion layer (12), and respectively clamping the clamping heads at the upper end and the lower end of the communication rod (14) into the clamping grooves (113) of the metal sheet (111) and the transparent glass sheet (131) to form the photovoltaic cell (1);
and S6, marking the surface of the photovoltaic cell (1), cutting the photovoltaic cell (1) along the mark by laser, bending the cut photovoltaic cell (1), and keeping the bent shape.
7. The method of claim 6, wherein the method comprises: in the step S1, the plasma screen printing method includes that the printed screen pattern part meshes penetrate through the paste, a scraper is used for applying a certain pressure on the paste part of the screen, the paste moves towards the other end of the screen, the paste is extruded to the surfaces of the metal sheet (111) and the transparent glass sheet (131) from the meshes of the pattern part by the scraper in the moving process, the marks are fixed in a certain range due to the viscosity of the paste, the scraper is in linear contact with the screen printing plate, the metal sheet (111) and the transparent glass sheet (131) all the time in the printing process, the contact line moves along with the movement of the scraper, the printing process is completed, and the combined installation of the electrode, the metal sheet (111) and the transparent glass sheet (131) is realized.
8. The method of claim 6, wherein the method comprises: in S2, the amorphous silicon layer (122) is coated by placing the metal sheet (111) and the transparent glass sheet (131) in a vacuum environment, charging an appropriate amount of argon gas, using a metal material as a target cathode, applying a dc voltage of 200V or more between the target cathode and the metal sheet (111) and the transparent glass sheet (131), ionizing the argon gas, accelerating and bombarding argon ions to the surface of the target cathode by the cathode, and sputtering atoms on the surface of the target cathode to deposit the atoms on the surfaces of the metal sheet (111) and the transparent glass sheet (131) to form a thin film.
9. The method of claim 6, wherein the method comprises: in S4, the specific process of vertical alignment bonding includes taking a picture with a top-view camera, positioning the four corners of the cell (121) and the amorphous silicon layer (122), calculating the offset of the cell (121) and the amorphous silicon layer (122), and moving the cell (121) and the amorphous silicon layer (122) according to the offset to align and bond the cell (121) and the amorphous silicon layer (122).
10. The method of claim 6, wherein: in the step S6, the cutting is carried out by using a laser cutting machine in a way of marking the surface of the photovoltaic cell (1), and high-pressure gas is blown to the surface of the photovoltaic cell (1) during the cutting.
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Application publication date: 20220923 |