CN115101607B - Solar cell - Google Patents
Solar cell Download PDFInfo
- Publication number
- CN115101607B CN115101607B CN202210663869.9A CN202210663869A CN115101607B CN 115101607 B CN115101607 B CN 115101607B CN 202210663869 A CN202210663869 A CN 202210663869A CN 115101607 B CN115101607 B CN 115101607B
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- China
- Prior art keywords
- strip
- grid line
- solar cell
- adjacent
- doped region
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- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solar cell, which comprises a crystalline silicon substrate layer and a doped layer formed on the crystalline silicon substrate layer, wherein the doped layer comprises a first doped region and a plurality of second doped regions formed in a grid-shaped arrangement in the first doped region, each second doped region is provided with a second strip electrode, and a first strip electrode is formed on the first doped region relatively close to the length edge of the second doped region; the two adjacent ends of the two adjacent first strip electrodes are connected through a first anti-breaking grid line, the first anti-breaking grid line is close to the edge of the doping layer relative to the end of the second strip electrode, the two adjacent ends of the two adjacent second strip electrodes are connected through a second anti-breaking grid line, the second anti-breaking grid line and the first strip electrodes are mutually intersected and insulated, and the second anti-breaking grid line is far away from the edge of the doping layer relative to the first anti-breaking grid line. The invention reduces the probability of grid breakage of the solar cell.
Description
Technical Field
The invention relates to the technical field of photovoltaic power generation, in particular to a solar cell with an anti-breaking gate electrode structure.
Background
With the continuous progress of the photovoltaic power generation technology, the photoelectric conversion efficiency of the solar cell is greatly improved. Particularly in the full back electrode contact crystalline silicon solar cell, positive and negative electrodes are all concentrated on the back surface, the front surface of the cell is free from shielding, and the photoelectric conversion efficiency is further increased. However, since both the positive and negative electrodes are concentrated on the back surface of the battery, the design of the anti-breakage gate circuit of the gate electrode is relatively complex.
Disclosure of Invention
In view of the shortcomings of the prior art, the invention provides a solar cell, which comprises a crystalline silicon substrate layer and a doped layer formed on the crystalline silicon substrate layer, wherein the doped layer comprises a first doped region and a plurality of second doped regions formed in a grid-shaped arrangement in the first doped region, each second doped region is provided with a second strip electrode, and a first strip electrode is formed on the first doped region relatively close to the length edge of the second doped region; the two adjacent ends of the first strip-shaped electrodes are connected through a first anti-breaking grid line, the first anti-breaking grid line is close to the edge of the doping layer relative to the end of the second strip-shaped electrode, the two adjacent ends of the second strip-shaped electrodes are connected through a second anti-breaking grid line, the second anti-breaking grid line and the first strip-shaped electrode are mutually intersected and insulated, and the second anti-breaking grid line is far away from the edge of the doping layer relative to the first anti-breaking grid line.
Preferably, the end of the first strip electrode is close to the edge of the doped layer relative to the end of the second strip electrode.
Preferably, the first break-preventing grid line comprises a plurality of first conducting wires spaced from each other, and the plurality of first conducting wires are respectively connected between the relatively close ends of two adjacent first strip-shaped electrodes.
Preferably, two adjacent first wires are connected to each other by a first connection.
Preferably, the second anti-breaking gate line includes a plurality of second wires spaced apart from each other, the plurality of second wires being respectively connected between relatively close ends of two adjacent second strip-shaped electrodes, the plurality of second wires crossing each other and being insulated from each other between the first strip-shaped electrodes.
Preferably, two adjacent second wires are connected to each other through a second connection line, and the second connection line and the first stripe-shaped electrode are spaced apart from each other.
The solar cell structure provided by the invention has the edge anti-breaking gate loop, so that the possibility of breaking the gate of the solar cell is reduced, and the quality of the solar cell is improved.
Drawings
Fig. 1a and 1b are schematic structural views of a solar cell according to an embodiment of the present invention;
fig. 2 is a schematic structural view of a solar cell according to another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are merely exemplary and the invention is not limited to these embodiments.
It should be noted here that, in order to avoid obscuring the present invention due to unnecessary details, only structures and/or processing steps closely related to the solution according to the present invention are shown in the drawings, while other details not greatly related to the present invention are omitted.
Example 1
The present embodiment provides a solar cell, which includes a crystalline silicon substrate layer 1 and a doped layer 2 formed on the crystalline silicon substrate layer 1, as shown in fig. 1a (side view of the solar cell) and fig. 1b (back view of the solar cell). The doped layer 2 includes a first doped region 21 and a plurality of second doped regions 22 formed in a grid-shaped arrangement in the first doped region 21, wherein a second stripe-shaped electrode 22a is formed on each second doped region 22, and a first stripe-shaped electrode 21a is formed on the first doped region 21 relatively close to the length edge of the second doped region 22. The end of the first strip electrode 21a is close to the edge of the doped layer 2 with respect to the end of the second strip electrode 22 a.
Wherein, the relatively close ends of two adjacent first strip-shaped electrodes 21a are connected by a first anti-breaking grid line 21b, the first anti-breaking grid line 21b is close to the edge of the doped layer 2 relative to the end of the second strip-shaped electrode 22a, the relatively close ends of two adjacent second strip-shaped electrodes 22a are connected by a second anti-breaking grid line 22b, the second anti-breaking grid line 22b and the first strip-shaped electrode 21a are mutually intersected and insulated, and the second anti-breaking grid line 22b is far away from the edge of the doped layer 2 relative to the first anti-breaking grid line 21 b.
The solar cell structure provided by the embodiment has the anti-breaking gate loop with the edge, so that the possibility of breaking the gate of the solar cell is reduced, and the quality of the solar cell is improved.
Optionally, a tunneling passivation layer may be disposed between the crystalline silicon substrate layer 1 and the doped layer 2.
Example 2
The solar cell provided in this example is a further improvement of the solar cell based on example 1. As shown in fig. 2, in the present embodiment, the first break preventing gate line 21b includes a plurality of first conductive lines 21c spaced apart from each other. The plurality of first wires 21c are connected between the relatively close ends of the adjacent two first strip electrodes 21a, respectively.
The second anti-breaking gate line 22b includes a plurality of second conductive wires 22c spaced apart from each other, the plurality of second conductive wires 22c are respectively connected between relatively close ends of two adjacent second strip-shaped electrodes 22a, and the plurality of second conductive wires 22c are mutually intersected with and insulated from the first strip-shaped electrodes 21a.
The first and second anti-breaking gate lines 21b and 22b of the present embodiment include a plurality of first conductive lines 21c and a plurality of second conductive lines 22c, respectively, so that even if one of the conductive lines breaks, two adjacent strip electrodes are connected to each other through the other conductive lines, thereby reducing the probability of breaking between the two adjacent strip electrodes.
Alternatively, two adjacent first wires 21c are connected to each other by a first connection (not shown), and two adjacent second wires 22c are connected to each other by a second connection (not shown), which is spaced apart from the first strip electrode 21a. The first wiring and the second wiring can be arranged in a plurality, so that the probability of grid breakage between two strip-shaped electrodes can be further reduced.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The solar cell is characterized by comprising a crystalline silicon substrate layer and a doped layer formed on the crystalline silicon substrate layer, wherein the doped layer comprises a first doped region and a plurality of second doped regions formed in a grid-shaped arrangement in the first doped region, each second doped region is provided with a second strip-shaped electrode, and a first strip-shaped electrode is formed on the first doped region relatively close to the length edge of the second doped region; the two adjacent ends of the first strip-shaped electrodes are connected through a first anti-breaking grid line, the first anti-breaking grid line is close to the edge of the doping layer relative to the end of the second strip-shaped electrode, the two adjacent ends of the second strip-shaped electrodes are connected through a second anti-breaking grid line, the second anti-breaking grid line and the first strip-shaped electrode are mutually intersected and insulated, and the second anti-breaking grid line is far away from the edge of the doping layer relative to the first anti-breaking grid line.
2. The solar cell of claim 1, wherein an end of the first strip electrode is proximate to an edge of the doped layer relative to an end of the second strip electrode.
3. The solar cell of claim 1, wherein the first break-preventing grid line comprises a plurality of first wires spaced apart from each other, the plurality of first wires being connected between relatively close ends of adjacent two of the first strip-shaped electrodes, respectively.
4. A solar cell according to claim 3, wherein two adjacent first wires are connected to each other by a first connection.
5. The solar cell according to claim 3, wherein the second break-preventing grid line includes a plurality of second conductive lines spaced apart from each other, the plurality of second conductive lines being connected between relatively close ends of two adjacent second strip-shaped electrodes, respectively, the plurality of second conductive lines intersecting with each other and being insulated from each other.
6. The solar cell according to claim 5, wherein two adjacent second wires are connected to each other by a second wire, and the second wire and the first stripe-shaped electrode are spaced apart from each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210663869.9A CN115101607B (en) | 2022-06-10 | 2022-06-10 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210663869.9A CN115101607B (en) | 2022-06-10 | 2022-06-10 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115101607A CN115101607A (en) | 2022-09-23 |
| CN115101607B true CN115101607B (en) | 2023-11-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210663869.9A Active CN115101607B (en) | 2022-06-10 | 2022-06-10 | Solar cell |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111477718A (en) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | Simple IBC battery electrode manufacturing process |
| CN114023830A (en) * | 2021-09-01 | 2022-02-08 | 普乐新能源科技(徐州)有限公司 | IBC solar cell structure with TOPCon back passivation contact structure and preparation method thereof |
| CN215771169U (en) * | 2021-04-28 | 2022-02-08 | 湖南红太阳新能源科技有限公司 | Crystalline silicon solar cell main grid screen pattern integrated with anti-breaking grid line design |
| CN216311797U (en) * | 2021-06-04 | 2022-04-15 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | Solar cell with anti-breaking grid design |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI497737B (en) * | 2010-12-02 | 2015-08-21 | Au Optronics Corp | Solar cell and manufacturing method thereof |
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2022
- 2022-06-10 CN CN202210663869.9A patent/CN115101607B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111477718A (en) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | Simple IBC battery electrode manufacturing process |
| CN215771169U (en) * | 2021-04-28 | 2022-02-08 | 湖南红太阳新能源科技有限公司 | Crystalline silicon solar cell main grid screen pattern integrated with anti-breaking grid line design |
| CN216311797U (en) * | 2021-06-04 | 2022-04-15 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | Solar cell with anti-breaking grid design |
| CN114023830A (en) * | 2021-09-01 | 2022-02-08 | 普乐新能源科技(徐州)有限公司 | IBC solar cell structure with TOPCon back passivation contact structure and preparation method thereof |
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| Publication number | Publication date |
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| CN115101607A (en) | 2022-09-23 |
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