CN115101404B - Local thinning method of two-dimensional tellurium alkene - Google Patents
Local thinning method of two-dimensional tellurium alkene Download PDFInfo
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- 229910052714 tellurium Inorganic materials 0.000 title claims abstract description 130
- -1 tellurium alkene Chemical class 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 54
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 123
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 60
- 238000002791 soaking Methods 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000001035 drying Methods 0.000 claims abstract description 7
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 24
- 239000010931 gold Substances 0.000 claims description 24
- 229910052737 gold Inorganic materials 0.000 claims description 24
- 238000005516 engineering process Methods 0.000 claims description 13
- 238000010894 electron beam technology Methods 0.000 claims description 11
- 238000002207 thermal evaporation Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 32
- 239000002184 metal Substances 0.000 abstract description 32
- 238000006555 catalytic reaction Methods 0.000 abstract description 6
- 238000007539 photo-oxidation reaction Methods 0.000 abstract description 5
- 230000003197 catalytic effect Effects 0.000 abstract description 4
- 230000005669 field effect Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001237 Raman spectrum Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000008213 purified water Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- FXADMRZICBQPQY-UHFFFAOYSA-N orthotelluric acid Chemical compound O[Te](O)(O)(O)(O)O FXADMRZICBQPQY-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Catalysts (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The invention discloses a local thinning method of two-dimensional tellurium alkene. The local thinning method of the two-dimensional tellurium alkene comprises the following steps: providing a two-dimensional tellurium alkene to be thinned; preparing a platinum layer at one end of the two-dimensional tellurium alkene; immersing the two-dimensional tellurium alkene with the platinum layer in water, and irradiating with light; and (3) soaking for a preset time under the condition of light irradiation, taking out and drying to obtain the locally thinned two-dimensional tellurium alkene. The invention realizes the local thinning of the two-dimensional tellurium by utilizing the photooxidation reaction of the two-dimensional tellurium under the catalysis of the metal platinum. The thinning method has little damage to residual two-dimensional tellurium. In addition, the thinning method is easy to control, and the thickness of thinning can be controlled by controlling the soaking time. In addition, the invention utilizes the catalytic action of the metal platinum to ensure that the thinning of the two-dimensional tellurium can be limited near the metal electrode, and the selective thinning of the two-dimensional tellurium can be realized by selecting the position of the metal electrode.
Description
Technical Field
The invention relates to the field of semiconductor materials, in particular to a local thinning method of two-dimensional tellurium alkene.
Background
In recent years, two-dimensional atomic crystals have shown excellent potential in the fields of nano devices, photoelectric devices and the like because of excellent performances in the aspects of electricity, optics, mechanics and the like, and become a research hot spot in the field of semiconductor materials. Among the numerous two-dimensional atomic crystals, the two-dimensional tellurium of the sixth main group becomes a new single element two-dimensional material after the graphene due to the unique structure and performance. Two-dimensional tellurium is a P-type narrow bandgap semiconductor whose bandgap increases as the thickness of the tellurium decreases: the band gap of the crystal tellurium is about 0.31eV, and the band gap of the double-layer tellurium alkene can reach 1.17eV theoretically. The two-dimensional tellurium-based field effect transistor has a switching ratio of up to 10 3-106 and a hole mobility of 700cm 2V-1s-1, and maintains good stability in air. These properties show promise for application of two-dimensional tellurins in the field of semiconductor materials.
Two-dimensional tellurienes have a structure consisting of a helical chain and a hexagonal framework. Tellurium atoms form helical chains through covalent bonding, and these helical chains are further stacked in a hexagonal frame by van der Waals forces to form two-dimensional tellurium olefins. Due to the chain structure, the tellurium nano material has the growth anisotropy in the synthesis process, so that the final product can obtain one-dimensional structures such as tellurium nanobelts, nanowires and the like. At present, a liquid phase method and a vapor phase deposition method can prepare two-dimensional tellurium by optimizing growth parameters, but the obtained two-dimensional tellurium product has certain limitations in thickness, size, crystallinity and the like. Controllable two-dimensional tellurium-ene growth still presents a significant challenge.
In order to obtain two-dimensional tellurium with proper thickness, thinning of the two-dimensional material is a common preparation method. The thinning of two-dimensional materials can be broadly divided into two types: one of the methods is dry thinning by etching the surface of the two-dimensional material with high energy such as laser and plasma; another is wet thinning, which uses chemical reactions between two-dimensional materials and etchants such as organic molecules. Dry thinning, while capable of selective layer-by-layer thinning, uses high energy that can damage the remaining two-dimensional material. The wet thinning adopts chemical reaction at normal temperature, so that the damage is small, but the local thinning cannot be realized. As a novel two-dimensional atomic crystal, a method for thinning two-dimensional tellurium alkene is still to be further studied.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide a local thinning method of two-dimensional tellurium alkene, which aims to solve the problem that the existing thinning method cannot realize local thinning.
The technical scheme of the invention is as follows:
in a first aspect of the present invention, a method for locally thinning two-dimensional tellurium is provided, comprising the steps of:
providing a two-dimensional tellurium alkene to be thinned;
Preparing a platinum layer at one end of the two-dimensional tellurium alkene;
Immersing the two-dimensional tellurium alkene with the platinum layer in water, and irradiating with light;
And (3) soaking for a preset time under the condition of light irradiation, taking out and drying to obtain the locally thinned two-dimensional tellurium alkene.
Optionally, the thickness of the platinum layer is 10-15nm.
Optionally, the platinum layer is located in a range determined by photolithography, and the platinum layer is prepared in the determined range of positions by electron beam thermal evaporation.
Alternatively, the platinum vapor deposition rate is 0.1-0.5nm/s.
Optionally, the thinning speed is 0.3-0.4nm/min.
Optionally, the light is natural light.
In a second aspect of the present invention, a method for locally thinning two-dimensional tellurium is provided, wherein the method comprises the steps of:
Providing two-dimensional tellurium to be thinned, wherein the two-dimensional tellurium to be thinned is positioned on the dielectric layer;
Preparing platinum layers at two ends of the two-dimensional tellurium alkene, and preparing gold layers on the platinum layers at two ends;
Immersing the two-dimensional tellurium alkene prepared with the platinum layer and the gold layer in water, and irradiating with light;
And (3) soaking for a preset time under the condition of light irradiation, taking out and drying to obtain the locally thinned two-dimensional tellurium alkene.
Optionally, the dielectric layer is a silicon oxide wafer or an aluminum oxide layer, etc.
Optionally, the thickness of the platinum layer is 10-15nm, and the thickness of the gold layer is 30-50nm.
Optionally, determining a position range of the platinum layer by using a photolithography technique, and preparing the platinum layer in the determined position range by using an electron beam thermal evaporation technique.
Optionally, determining a position range of the gold layer by adopting a photoetching technology, and preparing the gold layer in the determined position range by adopting an electron beam thermal evaporation technology.
The beneficial effects are that: the invention realizes the local thinning of the two-dimensional tellurium by utilizing the photooxidation reaction of the two-dimensional tellurium under the catalysis of the metal platinum. Compared with other two-dimensional material thinning technologies, the method has the following characteristics:
(1) The method adopted by the invention has lower requirements on operation equipment, simple operation flow and high feasibility and universality of implementation.
(2) The invention adopts a chemical method to thin, and has small damage to the residual two-dimensional tellurium alkene.
(3) The method adopted by the invention is easy to control, and the thickness of the thinning can be controlled by controlling the soaking time.
(4) The invention utilizes the catalytic action of the metal platinum to ensure that the thinning of the two-dimensional tellurium can be limited near the metal electrode. By selecting the position of the metal electrode, the two-dimensional tellurium alkene can be selectively thinned.
(5) The thinning process adopted by the invention is compatible with the traditional device preparation process, and can realize the local thinning after the device preparation, thereby optimizing the device performance.
Drawings
Fig. 1 is a schematic structural diagram of a two-dimensional tellurium alkene for thinning of example 1.
Fig. 2 is a planar optical photograph corresponding to fig. 1.
FIG. 3 is an optical photograph of the two-dimensional tellurium alkene of FIG. 2 after being immersed in water for 10 minutes under natural illumination.
Fig. 4 is a raman spectrum comparison of two-dimensional tellurium olefins in the thinned region and the non-thinned region of fig. 3.
Fig. 5 is an atomic force microscope photograph of the boundary of the two-dimensional tellurium-thinned region and the non-thinned region of fig. 3.
Fig. 6 is a schematic diagram of two-dimensional tellurium alkene thinning in example 1.
Fig. 7 is a schematic structural diagram of a field effect transistor based on two-dimensional tellurium in example 2.
Fig. 8 is a planar optical photograph of the two-dimensional tellurium-based field effect transistor of fig. 7.
Fig. 9 is a planar optical photograph of the two-dimensional tellurium-based field effect transistor of fig. 8 after 30 minutes of soaking.
Fig. 10 is a graph showing the transfer curves of field effect transistors based on two-dimensional tellurions of different thicknesses obtained at different soaking times in example 2.
Detailed Description
The invention provides a local thinning method of two-dimensional tellurium alkene, which is used for making the purposes, technical schemes and effects of the invention clearer and more definite, and is further described in detail below. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The embodiment of the invention provides a local thinning method of two-dimensional tellurium alkene, which comprises the following steps:
providing a two-dimensional tellurium alkene to be thinned;
Preparing a platinum layer at one end of the two-dimensional tellurium alkene;
Immersing the two-dimensional tellurium alkene with the platinum layer in water, and irradiating with light;
And (3) soaking for a preset time under the condition of light irradiation, taking out and drying to obtain the locally thinned two-dimensional tellurium alkene.
In this embodiment, a metal platinum (i.e., a platinum layer) is prepared at one end of a two-dimensional tellurium as a metal electrode, and then the two-dimensional tellurium with the metal electrode is immersed in water, and natural light is given to the two-dimensional tellurium, so that a locally thinned two-dimensional tellurium can be obtained. The thinning of the two-dimensional tellurium-ene may be localized near the metal electrode. Wherein, the soaking time is determined by the thickness which is required to be reduced.
In the embodiment, the two-dimensional tellurium with the platinum metal electrode is soaked in water, natural illumination conditions are given, and the two-dimensional tellurium is subjected to photooxidation reaction under the catalysis of platinum, so that the local thinning of the two-dimensional tellurium is realized. The narrow bandgap characteristics of the two-dimensional tellurium are shown in conjunction with fig. 6 to enable it to generate photo-generated electron hole pairs under natural light conditions. The generated photo-generated electron hole pairs are separated due to the difference of work functions between the platinum metal electrode and the two-dimensional tellurium alkene. The photogenerated electrons transfer to the platinum metal electrode and react with the water to produce hydrogen under the catalysis of platinum, leaving hydroxyl ions in the water. The photo-generated holes are left in the two-dimensional tellurium and react with the tellurium and hydroxyl ions in water to obtain a water-soluble telluric acid product, so that the etching of the two-dimensional tellurium is realized. By adopting the local thinning method, the two-dimensional tellurium alkene with proper thickness can be prepared for subsequent characterization or device application.
In the embodiment, local thinning of the two-dimensional tellurium is realized by utilizing photooxidation reaction of the two-dimensional tellurium under the catalysis of metal platinum. Compared with other two-dimensional material thinning technologies, the embodiment has the following characteristics:
(1) The method adopted by the embodiment has low requirements on operation equipment, simple operation flow and high feasibility and universality of implementation.
(2) In the embodiment, the thinning is performed by adopting a chemical method, and the damage to the residual two-dimensional tellurium alkene is small.
(3) The method adopted by the embodiment is easy to control, and the thickness of the thinning can be controlled by controlling the soaking time.
(4) The embodiment utilizes the catalytic action of the metal platinum, so that the thinning of the two-dimensional tellurium can be limited to the vicinity of the metal electrode. By selecting the position of the metal electrode, the two-dimensional tellurium alkene can be selectively thinned.
(5) The thinning process adopted in the embodiment is compatible with the traditional device preparation process, and the partial thinning can be performed after the device preparation, so that the device performance is optimized.
In one embodiment, the platinum layer has a thickness of 10-15nm.
In one embodiment, the platinum layer is defined using photolithographic techniques and the platinum layer is prepared using electron beam thermal evaporation techniques at the defined location. Further, the evaporation rate of platinum is 0.1-0.5nm/s.
In one embodiment, the thinning speed is 0.3-0.4nm/min.
The embodiment of the invention also provides a local thinning method of the two-dimensional tellurium alkene, which comprises the following steps:
Providing two-dimensional tellurium to be thinned, wherein the two-dimensional tellurium to be thinned is positioned on the dielectric layer;
Preparing platinum layers at two ends of the two-dimensional tellurium alkene, and preparing gold layers on the platinum layers at two ends;
Immersing the two-dimensional tellurium alkene prepared with the platinum layer and the gold layer in water, and irradiating with light;
And (3) soaking for a preset time under the condition of light irradiation, taking out and drying to obtain the locally thinned two-dimensional tellurium alkene.
In this embodiment, for two-dimensional tellurium on a dielectric layer, a platinum layer and a gold layer are prepared at two ends of the two-dimensional tellurium, so as to obtain a back gate field effect transistor using platinum as a source/drain electrode, two-dimensional tellurium as a channel, and a silicon oxide wafer as a dielectric layer. The back gate field effect transistor is soaked in water, natural illumination conditions are given, and the two-dimensional tellurium is subjected to photooxidation reaction under the catalysis of platinum, so that the thinning of the two-dimensional tellurium of the channel is realized.
Wherein, the gold has low chemical reactivity, is suitable for being used as a metal electrode, and other active metals are not suitable for being used as the top layer of the electrode. And the thinning of the two-dimensional tellurium alkene is not influenced by gold.
In this embodiment, the two-dimensional tellurium to be thinned is located on the dielectric layer. Specifically, a two-dimensional tellurium can be prepared by adopting a hydrothermal reaction, and then the two-dimensional tellurium is transferred onto the dielectric layer. Further, the thickness of the dielectric layer is 100-300nm. Further, the dielectric layer may be a common dielectric layer such as a silicon oxide wafer or an aluminum oxide layer.
In one embodiment, the platinum layer has a thickness of 10-15nm and the gold layer has a thickness of 30-50nm. The method can be compatible with the traditional device preparation process.
In one embodiment, the platinum layer is defined using photolithographic techniques and the platinum layer is prepared using electron beam thermal evaporation techniques at the defined location. Further, the evaporation rate of the metal is 0.1-0.5nm/s.
In one embodiment, the gold layer is defined using photolithography techniques and the gold layer is prepared at the defined location using electron beam thermal evaporation techniques. Further, the evaporation rate of the metal is 0.1-0.5nm/s.
In one embodiment, the thinning speed is 0.3-0.4nm/min.
In one embodiment, the two-dimensional tellurium alkene prepared with a platinum layer and a gold layer is irradiated with natural light.
The invention is further illustrated by the following specific examples.
Example 1
As shown in connection with fig. 1, a two-dimensional tellurium alkene on a dielectric layer is taken as a thinning object. The range of the platinum layer and the gold layer is determined by adopting the traditional photoetching technology, and a platinum layer with the thickness of 15nm and a gold layer with the thickness of 40nm are sequentially prepared at one end of the two-dimensional tellurium alkene by adopting the electron beam thermal evaporation technology to serve as metal electrodes, wherein the evaporation rates of the platinum and the gold are both 0.1nm/s. The obtained sample was immersed in purified water and irradiated with natural light. The soaking time is 10 minutes, and then the sample is dried, so that the two-dimensional tellurium alkene with the thickness of 3.5nm is thinned near the metal electrode.
Fig. 2 is a planar optical photograph corresponding to fig. 1.
FIG. 3 is an optical photograph of the two-dimensional tellurium alkene of FIG. 2 after being immersed in water for 10 minutes under natural illumination. The change in color contrast of the two-dimensional tellurium is indicative of the change in thickness of the two-dimensional tellurium, and it is apparent from fig. 3 that the thinning of the two-dimensional tellurium occurs in the vicinity of the metal electrode.
FIG. 4 is a Raman spectrum comparison of two-dimensional tellurium in the thinned region and the non-thinned region of the two-dimensional tellurium of FIG. 3, and the shift of the Raman peak indicates the thinning of the two-dimensional tellurium.
Fig. 5 is an atomic force microscope photograph of the boundary of the two-dimensional tellurium-thinned region and the non-thinned region of fig. 3. The thickness of the thinned region was 7.7nm, and the thickness of the non-thinned region was 11.2nm.
Fig. 6 is a schematic diagram of two-dimensional tellurium alkene thinning.
Example 2
A two-dimensional tellurium alkene is used as a channel material, a 300nm thick silicon oxide wafer is used as a dielectric layer, a traditional photoetching technology is adopted to determine the position range of a platinum layer and a gold layer, and an electron beam thermal evaporation technology is adopted to sequentially prepare a back gate field effect transistor with 15nm thick metal platinum and 40nm thick metal gold as source and drain electrodes in the determined position range. The obtained back gate field effect transistor is soaked in purified water and irradiated under the condition of natural light. The soaking time is 30 minutes, and the two-dimensional tellurium-alkene field effect transistor with the thinned channel can be obtained. And obtaining the two-dimensional tellurium-alkene field effect transistor based on different thicknesses under different soaking times.
Fig. 7 is a schematic structural diagram of a field effect transistor based on two-dimensional tellurium in example 2.
Fig. 8 is a planar optical photograph of the two-dimensional tellurium-based field effect transistor of fig. 7.
Fig. 9 is a planar optical photograph of the two-dimensional tellurium-based field effect transistor of fig. 8 after 30 minutes of soaking.
Fig. 10 is a graph showing the transfer curves of field effect transistors based on two-dimensional tellurions of different thicknesses obtained at different soaking times in example 2.
In summary, according to the method for locally thinning the two-dimensional tellurium provided by the invention, the metal platinum (namely, the platinum layer) is prepared at one end of the two-dimensional tellurium as the metal electrode, then the two-dimensional tellurium with the metal electrode is soaked in water, and natural light irradiation is given to the two-dimensional tellurium, so that the locally thinned two-dimensional tellurium can be obtained. The thinning of the two-dimensional tellurium-ene may be localized near the metal electrode. Wherein, the soaking time is determined by the thickness which is required to be reduced. Compared with other two-dimensional material thinning technologies, the method has the following characteristics: (1) The method adopted by the invention has lower requirements on operation equipment, simple operation flow and high feasibility and universality of implementation. (2) The invention adopts a chemical method to thin, and has small damage to the residual two-dimensional tellurium alkene. (3) The method adopted by the invention is easy to control, and the thickness of the thinning can be controlled by controlling the soaking time. (4) The invention utilizes the catalytic action of the metal platinum to ensure that the thinning of the two-dimensional tellurium can be limited near the metal electrode. By selecting the position of the metal electrode, the two-dimensional tellurium alkene can be selectively thinned. (5) The thinning process adopted by the invention is compatible with the traditional device preparation process, and can realize the local thinning after the device preparation, thereby optimizing the device performance.
It is to be understood that the invention is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.
Claims (8)
1. The local thinning method of the two-dimensional tellurium alkene is characterized by comprising the following steps of:
providing a two-dimensional tellurium alkene to be thinned;
Preparing a platinum layer at one end of the two-dimensional tellurium alkene;
Immersing the two-dimensional tellurium alkene with the platinum layer in water, and irradiating with light;
Soaking for a preset time under the condition of light irradiation, taking out and drying to obtain locally thinned two-dimensional tellurium alkene;
the thinning speed is 0.3-0.4nm/min;
The light is natural light.
2. The method for locally thinning two-dimensional tellurium according to claim 1, wherein the thickness of the platinum layer is 10-15nm.
3. The method for locally thinning a two-dimensional tellurium alkene according to claim 1, wherein, and determining the position range of the platinum layer by adopting a photoetching technology, and preparing the platinum layer in the determined position range by adopting an electron beam thermal evaporation technology.
4. A method of locally thinning a two-dimensional tellurium alkene according to claim 3, wherein the evaporation rate of platinum is 0.1-0.5nm/s.
5. The local thinning method of the two-dimensional tellurium alkene is characterized by comprising the following steps of:
Providing two-dimensional tellurium to be thinned, wherein the two-dimensional tellurium to be thinned is positioned on the dielectric layer;
Preparing platinum layers at two ends of the two-dimensional tellurium alkene, and preparing gold layers on the platinum layers at two ends;
Immersing the two-dimensional tellurium alkene prepared with the platinum layer and the gold layer in water, and irradiating with light;
Soaking for a preset time under the condition of light irradiation, taking out and drying to obtain locally thinned two-dimensional tellurium alkene;
the thinning speed is 0.3-0.4nm/min;
The light is natural light.
6. The method of claim 5, wherein the dielectric layer is a silicon oxide wafer or an aluminum oxide layer.
7. The method for locally thinning two-dimensional tellurium according to claim 5, wherein the thickness of the platinum layer is 10-15nm and the thickness of the gold layer is 30-50nm.
8. The method for locally thinning the two-dimensional tellurium alkene according to claim 5, wherein a position range of the platinum layer is determined by a photolithography technique, and the platinum layer is prepared in the determined position range by an electron beam thermal evaporation technique;
And determining the position range of the gold layer by adopting a photoetching technology, and preparing the gold layer in the determined position range by adopting an electron beam thermal evaporation technology.
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