CN115101404A - Two-dimensional tellurine local thinning method - Google Patents
Two-dimensional tellurine local thinning method Download PDFInfo
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- CN115101404A CN115101404A CN202210654988.8A CN202210654988A CN115101404A CN 115101404 A CN115101404 A CN 115101404A CN 202210654988 A CN202210654988 A CN 202210654988A CN 115101404 A CN115101404 A CN 115101404A
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- 238000000034 method Methods 0.000 title claims abstract description 54
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 119
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 58
- 238000002791 soaking Methods 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 230000001678 irradiating effect Effects 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 23
- 229910052737 gold Inorganic materials 0.000 claims description 23
- 239000010931 gold Substances 0.000 claims description 23
- 238000010894 electron beam technology Methods 0.000 claims description 11
- 238000002207 thermal evaporation Methods 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 9
- 238000000206 photolithography Methods 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 32
- 239000002184 metal Substances 0.000 abstract description 32
- 238000006555 catalytic reaction Methods 0.000 abstract description 6
- 238000007539 photo-oxidation reaction Methods 0.000 abstract description 5
- 230000003197 catalytic effect Effects 0.000 abstract description 4
- 230000005669 field effect Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 7
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 7
- -1 tellurite alkene Chemical class 0.000 description 7
- 229910052714 tellurium Inorganic materials 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000008213 purified water Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- FXADMRZICBQPQY-UHFFFAOYSA-N orthotelluric acid Chemical compound O[Te](O)(O)(O)(O)O FXADMRZICBQPQY-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The invention discloses a local thinning method of two-dimensional tellurine. The two-dimensional telluriene local thinning method comprises the following steps: providing two-dimensional telluroene to be thinned; preparing a platinum layer at one end of the two-dimensional tellurine; soaking the two-dimensional telluroene with the prepared platinum layer in water, and irradiating by adopting light; and soaking for a preset time under the condition of light irradiation, taking out and drying to obtain the locally thinned two-dimensional telluroene. The invention realizes the local thinning of the two-dimensional telluroene by utilizing the photo-oxidation reaction of the two-dimensional telluroene under the catalysis of the metal platinum. The thinning method disclosed by the invention has small damage to the residual two-dimensional telluroene. In addition, the thinning method is easy to control, and the thinned thickness can be controlled by controlling the soaking time. In addition, the invention utilizes the catalytic action of metal platinum to limit the thinning of the two-dimensional telluroene near the metal electrode, and the selective thinning of the two-dimensional telluroene can be realized by selecting the position of the metal electrode.
Description
Technical Field
The invention relates to the field of semiconductor materials, in particular to a two-dimensional tellurite alkene local thinning method.
Background
In recent years, two-dimensional atomic crystals have shown their excellent potential in the fields of nano devices, photoelectric devices and the like because of their excellent properties in the aspects of electricity, optics, mechanics and the like, and have become a hot point of research in the field of semiconductor materials. Among the numerous two-dimensional atomic crystals, the six main group of two-dimensional telluridines are stones due to their unique structures and propertiesGraphene is followed by yet another emerging single-element two-dimensional material. Two-dimensional telluriene is a P-type narrow bandgap semiconductor whose bandgap increases as the thickness of the telluriene decreases: the band gap of the crystal tellurium is about 0.31eV, and the band gap of the double-layer tellurium alkene can reach 1.17eV theoretically. The field effect transistor based on two-dimensional tellurine has a structure of 10 3 -10 6 And a switching ratio of 700cm 2 V -1 s -1 And good stability in air is maintained. These properties show the application prospect of the two-dimensional tellurine in the field of semiconductor materials.
Two-dimensional telluridines have a structure consisting of a helical chain and a hexagonal framework. Tellurium atoms form helical chains by covalent bonding, and these helical chains are further stacked by van der waals forces to form a two-dimensional tellurine in a hexagonal framework. Due to the chain structure, the tellurium nano material has growth anisotropy in the synthesis process, so that the final product can obtain one-dimensional structures such as tellurium nano-belts, nano-wires and the like. At present, a liquid phase method and a gas phase deposition method can prepare two-dimensional telluroene by optimizing growth parameters, but the obtained two-dimensional telluroene product has certain limitations in the aspects of thickness, size, crystallinity and the like. Controllable two-dimensional telluriene growth remains a significant challenge.
In order to obtain a two-dimensional tellurine with a suitable thickness, thinning a two-dimensional material is a common preparation method. The thinning of two-dimensional materials can be roughly divided into two types: one method is dry thinning of the surface of the two-dimensional material by using high energy such as laser, plasma and the like to etch; the other is wet thinning using a chemical reaction between a two-dimensional material and an etchant such as an organic molecule. Dry thinning, while enabling selective layer-by-layer thinning, uses high energy that can cause damage to the remaining two-dimensional material. The wet thinning adopts chemical reaction at normal temperature, has small damage, but can not realize local thinning. As a novel two-dimensional atomic crystal, a two-dimensional tellurium-alkene thinning method needs to be further researched.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a local thinning method of two-dimensional tellurine, and aims to solve the problem that the local thinning cannot be realized by the conventional thinning method.
The technical scheme of the invention is as follows:
the invention provides a local thinning method of two-dimensional tellurine, which comprises the following steps:
providing two-dimensional tellurite to be thinned;
preparing a platinum layer at one end of the two-dimensional tellurite alkene;
soaking the two-dimensional tellurine with the prepared platinum layer in water, and irradiating by adopting light;
and soaking for a preset time under the condition of light irradiation, taking out and drying to obtain the locally thinned two-dimensional telluroene.
Optionally, the thickness of the platinum layer is 10-15 nm.
Optionally, a position range of the platinum layer is determined by using a photolithography technique, and the platinum layer is prepared in the determined position range by using an electron beam thermal evaporation technique.
Alternatively, the platinum evaporation rate is 0.1-0.5 nm/s.
Optionally, the thinning speed is 0.3-0.4 nm/min.
Optionally, the light is natural light.
The second aspect of the present invention provides a two-dimensional tellurine local thinning method, wherein the method comprises the steps of:
providing two-dimensional tellurite to be thinned, wherein the two-dimensional tellurite to be thinned is positioned on the dielectric layer;
preparing platinum layers at two ends of the two-dimensional telluroene, and preparing gold layers on the platinum layers at the two ends;
soaking the two-dimensional telluroene with the platinum layer and the gold layer in water, and irradiating by light;
and soaking for a preset time under the condition of light irradiation, taking out and drying to obtain the locally thinned two-dimensional telluroene.
Optionally, the dielectric layer is a silicon oxide wafer or an aluminum oxide layer.
Optionally, the thickness of the platinum layer is 10-15nm, and the thickness of the gold layer is 30-50 nm.
Optionally, a position range of the platinum layer is determined by using a photolithography technique, and the platinum layer is prepared in the determined position range by using an electron beam thermal evaporation technique.
Optionally, a position range of the gold layer is determined by using a photolithography technique, and the gold layer is prepared in the determined position range by using an electron beam thermal evaporation technique.
Has the advantages that: the invention realizes the local thinning of the two-dimensional tellurite by utilizing the photo-oxidation reaction of the two-dimensional tellurite under the catalysis of metal platinum. Compared with other two-dimensional material thinning technologies, the invention has the following characteristics:
(1) the method adopted by the invention has lower requirements on operating equipment, simple operation process and high feasibility and universality of implementation.
(2) The invention adopts a chemical method to thin, and the damage to the residual two-dimensional telluroene is small.
(3) The method adopted by the invention is easy to control, and the reduced thickness can be controlled by controlling the soaking time.
(4) The invention utilizes the catalytic action of metal platinum, so that the thinning of the two-dimensional tellurine can be limited near the metal electrode. The selective thinning of the two-dimensional tellurine can be realized by selecting the position of the metal electrode.
(5) The thinning process adopted by the invention is compatible with the traditional device preparation process, and the local thinning can be carried out after the device is prepared, thereby optimizing the device performance.
Drawings
Fig. 1 is a schematic structural diagram of two-dimensional tellurine for thinning in example 1.
Fig. 2 is a plan optical photograph corresponding to fig. 1.
Fig. 3 is an optical photograph of the two-dimensional tellurine in fig. 2 after being soaked in water under natural illumination for 10 minutes.
Fig. 4 is a raman spectrum comparison of the two-dimensional tellurine in the two-dimensional tellurine thinned region and the two-dimensional tellurine in the two-dimensional tellurine non-thinned region in fig. 3.
FIG. 5 is an atomic force microscope photograph of the boundary between the two-dimensional tellurium-alkene thinned region and the non-thinned region in FIG. 3.
Fig. 6 is a schematic diagram of the two-dimensional tellurium reduction in example 1.
Fig. 7 is a schematic structural view of a two-dimensional tellurine-based field effect transistor in example 2.
Fig. 8 is a plan view photomicrograph of the two-dimensional tellurite-ene based field effect transistor of fig. 7.
Fig. 9 is a plan view optical photograph of the two-dimensional tellurine-based field effect transistor of fig. 8 after being soaked for 30 minutes.
Fig. 10 is a transfer curve of the field effect transistor based on two-dimensional tellurilene with different thicknesses obtained in example 2 under different soaking times.
Detailed Description
The invention provides a local thinning method of two-dimensional telluroene, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The embodiment of the invention provides a two-dimensional tellurine local thinning method, which comprises the following steps:
providing two-dimensional telluroene to be thinned;
preparing a platinum layer at one end of the two-dimensional tellurine;
soaking the two-dimensional telluroene with the prepared platinum layer in water, and irradiating by adopting light;
and soaking for a preset time under the condition of light irradiation, taking out and drying to obtain the locally thinned two-dimensional tellurine.
In this embodiment, a metal platinum (i.e., a platinum layer) is prepared at one end of a two-dimensional telluroene as a metal electrode, and then the two-dimensional telluroene with the metal electrode prepared is soaked in water and irradiated with natural light, so as to obtain a locally thinned two-dimensional telluroene. The thinning of the two-dimensional tellurine can be limited to the vicinity of the metal electrode. Wherein, the soaking time is determined according to the thickness needing to be thinned.
In this embodiment, the two-dimensional telluriene with a platinum metal electrode is soaked in water, and a natural light condition is given, so that the two-dimensional telluriene undergoes a photo-oxidation reaction under the catalysis of platinum, thereby realizing the local thinning of the two-dimensional telluriene. In conjunction with fig. 6, the properties of the two-dimensional narrow tellurine bandgap enable the generation of photogenerated electron-hole pairs under natural lighting conditions. The generated photo-generated electron-hole pairs are separated due to the difference of work functions between the platinum metal electrode and the two-dimensional telluroene. The photo-generated electrons are transferred to a platinum metal electrode and react with water to produce hydrogen under the catalysis of platinum, leaving hydroxide ions in the water. And the photo-generated holes are remained in the two-dimensional telluroene to react with the telluroene and hydroxide ions in water to obtain telluric acid products dissolved in water, so that the etching of the two-dimensional telluroene is realized. By adopting the local thinning method, the two-dimensional tellurine with proper thickness can be prepared for subsequent characterization or device application.
In the embodiment, the local thinning of the two-dimensional tellurite is realized by utilizing the photo-oxidation reaction of the two-dimensional tellurite under the catalysis of metal platinum. Compared with other two-dimensional material thinning technologies, the embodiment has the following characteristics:
(1) the method adopted by the embodiment has the advantages of low requirement on operating equipment, simple operation flow and high implementation feasibility and universality.
(2) In the embodiment, a chemical method is adopted for thinning, and the damage to the residual two-dimensional tellurine is small.
(3) The method adopted by the embodiment is easy to control, and the reduced thickness can be controlled by controlling the soaking time.
(4) The embodiment utilizes the catalytic action of metal platinum, so that the thinning of the two-dimensional tellurine can be limited near the metal electrode. The selective thinning of the two-dimensional tellurine can be realized by selecting the position of the metal electrode.
(5) The thinning process adopted by the embodiment is compatible with the traditional device preparation process, and the local thinning can be carried out after the device is prepared, so that the performance of the device is optimized.
In one embodiment, the platinum layer has a thickness of 10-15 nm.
In one embodiment, the platinum layer is located at a defined position by photolithography and is prepared at a defined position by electron beam thermal evaporation. Further, the evaporation rate of platinum is 0.1-0.5 nm/s.
In one embodiment, the thinning rate is 0.3-0.4 nm/min.
The embodiment of the invention also provides a local thinning method of the two-dimensional tellurine, which comprises the following steps:
providing two-dimensional telluroene to be thinned, wherein the two-dimensional telluroene to be thinned is positioned on the dielectric layer;
preparing platinum layers at two ends of the two-dimensional telluroene, and preparing gold layers on the platinum layers at the two ends;
soaking the two-dimensional telluroene with the platinum layer and the gold layer in water, and irradiating by light;
and soaking for a preset time under the condition of light irradiation, taking out and drying to obtain the locally thinned two-dimensional telluroene.
In this embodiment, for a two-dimensional telluriene located on a dielectric layer, a platinum layer and a gold layer are prepared at two ends of the two-dimensional telluriene, so as to obtain a back gate field effect transistor using platinum as a source/drain electrode, two-dimensional telluriene as a channel, and, for example, a silicon oxide wafer as a dielectric layer. The back gate field effect transistor is soaked in water, natural illumination conditions are given, and the two-dimensional telluroene is subjected to photo-oxidation reaction under the catalysis of platinum, so that the thinning of the channel two-dimensional telluroene is realized.
The gold has low chemical reaction activity and is suitable for being used as a metal electrode, and other active metals are not suitable for being used as the topmost layer of the electrode. And the gold does not influence the thinning of the two-dimensional tellurine.
In this embodiment, the two-dimensional tellurine to be thinned is located on the dielectric layer. Specifically, a hydrothermal reaction can be first adopted to prepare the two-dimensional telluroene, and then the two-dimensional telluroene is transferred onto the dielectric layer. Further, the thickness of the dielectric layer is 100-300 nm. Further, the dielectric layer may be a common dielectric layer such as a silicon oxide wafer or an aluminum oxide layer.
In one embodiment, the thickness of the platinum layer is 10-15nm and the thickness of the gold layer is 30-50 nm. Which is compatible with conventional device fabrication processes.
In one embodiment, the platinum layer is located at a defined position by photolithography and is prepared at a defined position by electron beam thermal evaporation. Furthermore, the evaporation rate of the metal is 0.1-0.5 nm/s.
In one embodiment, the gold layer is prepared in a defined position range by electron beam thermal evaporation. Furthermore, the evaporation rate of the metal is 0.1-0.5 nm/s.
In one embodiment, the thinning rate is 0.3-0.4 nm/min.
In one embodiment, the two-dimensional telluroene prepared with a platinum layer and a gold layer is irradiated with natural light.
The invention is further illustrated by the following specific examples.
Example 1
Referring to fig. 1, a two-dimensional tellurine on a dielectric layer is used as a thinning target. The position ranges of the platinum layer and the gold layer are determined by adopting a traditional photoetching technology, the platinum layer with the thickness of 15nm and the gold layer with the thickness of 40nm are sequentially prepared at one end of the two-dimensional telluridene by adopting an electron beam thermal evaporation technology to serve as metal electrodes, and the evaporation rates of platinum and gold are both 0.1 nm/s. The obtained sample is soaked in purified water and irradiated under the condition of natural light. The soaking time is 10 minutes, and then the sample is dried, so that the two-dimensional tellurine which is thinned by 3.5nm near the metal electrode can be obtained.
Fig. 2 is a plan optical photograph corresponding to fig. 1.
Fig. 3 is an optical photograph of the two-dimensional tellurine in fig. 2 after being soaked in water under natural illumination for 10 minutes. The color contrast change of the two-dimensional telluroene indicates that the thickness of the two-dimensional telluroene has changed, and it is understood from fig. 3 that the two-dimensional telluroene has been thinned near the metal electrode.
Fig. 4 is a comparison of raman spectra of the two-dimensional telluroene in the thinned region and the two-dimensional telluroene in the non-thinned region in fig. 3, and the shift of the raman peak indicates the thinning of the two-dimensional telluroene.
Fig. 5 is an atomic force microscope photograph of the boundary between the two-dimensional tellurium-alkene thinned region and the non-thinned region in fig. 3. The thickness of the thinned area is 7.7nm, and the thickness of the non-thinned area is 11.2 nm.
FIG. 6 is a schematic diagram of two-dimensional tellurium-alkene thinning.
Example 2
Two-dimensional telluroene is used as a channel material, a silicon oxide wafer with the thickness of 300nm is used as a dielectric layer, the position ranges of a platinum layer and a gold layer are determined by adopting the traditional photoetching technology, and a back gate field effect transistor with metal platinum with the thickness of 15nm and metal gold with the thickness of 40nm as source and drain electrodes is sequentially prepared in the determined position ranges by adopting an electron beam thermal evaporation technology. And soaking the obtained back gate field effect transistor in purified water, and irradiating under the condition of natural light. And soaking for 30 minutes to obtain the two-dimensional tellurium alkene field effect transistor with the thinned channel. And obtaining the two-dimensional tellurium alkene field effect transistors based on different thicknesses under different soaking time.
Fig. 7 is a schematic structural diagram of a two-dimensional telluriene-based field-effect transistor in example 2.
Fig. 8 is a plan view photomicrograph of the two-dimensional tellurite-ene based field effect transistor of fig. 7.
Fig. 9 is a plan view optical photograph of the two-dimensional tellurine-based field effect transistor of fig. 8 after being soaked for 30 minutes.
Fig. 10 is a transfer curve of the field effect transistor based on two-dimensional telluriene with different thicknesses obtained in example 2 under different soaking times.
In summary, according to the local thinning method for the two-dimensional telluroene provided by the invention, the two-dimensional telluroene with the locally thinned two-dimensional telluroene can be obtained by preparing metal platinum (namely a platinum layer) at one end of the two-dimensional telluroene to serve as a metal electrode, soaking the two-dimensional telluroene with the prepared metal electrode in water, and irradiating the two-dimensional telluroene with natural light. The thinning of the two-dimensional tellurine can be limited to the vicinity of the metal electrode. Wherein, the soaking time is determined according to the thickness needing to be thinned. Compared with other two-dimensional material thinning technologies, the invention has the following characteristics: (1) the method adopted by the invention has lower requirements on operating equipment, simple operation process and high feasibility and universality of implementation. (2) The invention adopts a chemical method to thin, and the damage to the residual two-dimensional telluridene is small. (3) The method adopted by the invention is easy to control, and the reduced thickness can be controlled by controlling the soaking time. (4) The invention utilizes the catalytic action of metal platinum, so that the thinning of the two-dimensional tellurine can be limited near the metal electrode. The selective thinning of the two-dimensional tellurine can be realized by selecting the position of the metal electrode. (5) The thinning process adopted by the invention is compatible with the traditional device preparation process, and the local thinning can be carried out after the device is prepared, thereby optimizing the device performance.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A two-dimensional tellurine local thinning method is characterized by comprising the following steps:
providing two-dimensional telluroene to be thinned;
preparing a platinum layer at one end of the two-dimensional tellurine;
soaking the two-dimensional telluroene with the prepared platinum layer in water, and irradiating by adopting light;
and soaking for a preset time under the condition of light irradiation, taking out and drying to obtain the locally thinned two-dimensional telluroene.
2. The local thinning method of the two-dimensional telluriene according to claim 1, wherein the thickness of the platinum layer is 10-15 nm.
3. The local thinning method of the two-dimensional telluriene as claimed in claim 1, wherein the position range of the platinum layer is determined by photolithography, and the platinum layer is prepared in the determined position range by electron beam thermal evaporation.
4. The local thinning method of two-dimensional telluriene as claimed in claim 3, wherein the evaporation rate of platinum is 0.1-0.5 nm/s.
5. The local thinning method of the two-dimensional tellurine according to claim 1, characterized in that the thinning speed is 0.3-0.4 nm/min.
6. The local thinning method of the two-dimensional telluriene according to claim 1, wherein the light is natural light.
7. A two-dimensional tellurine local thinning method is characterized by comprising the following steps:
providing two-dimensional telluroene to be thinned, wherein the two-dimensional telluroene to be thinned is positioned on the dielectric layer;
preparing platinum layers at two ends of the two-dimensional telluroene, and preparing gold layers on the platinum layers at the two ends;
soaking the two-dimensional telluroene with the platinum layer and the gold layer in water, and irradiating by light;
and soaking for a preset time under the condition of light irradiation, taking out and drying to obtain the locally thinned two-dimensional telluroene.
8. The local thinning method of two-dimensional telluriene according to claim 7, wherein said dielectric layer is a silicon oxide wafer or an aluminum oxide layer.
9. The local thinning method of the two-dimensional telluriene as claimed in claim 7, wherein the thickness of the platinum layer is 10-15nm, and the thickness of the gold layer is 30-50 nm.
10. The local thinning method of the two-dimensional telluriene as claimed in claim 7, characterized in that the position range of the platinum layer is determined by using a photolithography technique, and the platinum layer is prepared in the determined position range by using an electron beam thermal evaporation technique;
and determining the position range of the gold layer by adopting a photoetching technology, and preparing the gold layer in the determined position range by adopting an electron beam thermal evaporation technology.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117012812A (en) * | 2023-10-07 | 2023-11-07 | 之江实验室 | Method for etching two-dimensional tellurium alkene by combining wet method and dry method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117012812A (en) * | 2023-10-07 | 2023-11-07 | 之江实验室 | Method for etching two-dimensional tellurium alkene by combining wet method and dry method |
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