CN115085684A - Power amplifier module packaging structure and packaging method thereof - Google Patents
Power amplifier module packaging structure and packaging method thereof Download PDFInfo
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- CN115085684A CN115085684A CN202210840033.1A CN202210840033A CN115085684A CN 115085684 A CN115085684 A CN 115085684A CN 202210840033 A CN202210840033 A CN 202210840033A CN 115085684 A CN115085684 A CN 115085684A
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- China
- Prior art keywords
- power amplifier
- substrate
- solder mask
- filter chip
- exposable
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
Abstract
The invention discloses a power amplifier module packaging structure and a packaging method thereof, and the power amplifier module packaging structure comprises a substrate, a solder mask layer which is positioned on the front side of the substrate and is provided with an opening, a filter chip which is inversely arranged on the front side of the substrate and is positioned at the opening of the solder mask layer, a power amplifier which is electrically connected with the front side of the substrate, and an exposable isolating film which avoids the connection part of the power amplifier and the substrate and covers the filter chip and the solder mask layer, wherein convex points for transmitting signals are uniformly distributed on one side surface of the filter chip facing to the substrate, a certain distance is arranged between the lower surface of the filter chip and the front side of the substrate, and a sealed cavity is formed among the filter chip, the solder mask layer, the isolating film and the substrate. The invention is provided with the exposable isolation film, so that the power amplifier can be directly and electrically connected with the substrate, thereby realizing the characteristics of low cost of bare chip packaging and meeting the high heat dissipation requirement of the power amplifier element.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a power amplifier module packaging structure and a packaging method thereof.
Background
The power amplifier module needs to be composed of a sound meter filter, a power amplifier and other elements, the heat productivity of the power amplifier module is high in the working process, and the power amplifier elements generally need to be connected through a wire bonding process. Therefore, the current industry packaging scheme: the method comprises the steps of firstly mounting the packaged filter element and other elements on a substrate, then fixing the filter element and other elements through reflow soldering, then mounting an amplifier on a carrier plate through die bonder, then connecting the amplifier and the substrate through a wire bonding process, and finally completing the packaging through an injection molding process. And because the prior art requires WLP or CSP packaging of the surface acoustic filter elements, the manufacturing cost is increased.
Therefore, it is desired to solve the above problems.
Disclosure of Invention
The invention aims to: a first objective of the present invention is to provide a power amplifier module package structure that effectively solves the problems of wire collapse and heat dissipation.
The second objective of the present invention is to provide a packaging method for a power amplifier module package structure.
The technical scheme is as follows: in order to achieve the purpose, the invention discloses a power amplifier module packaging structure which comprises a substrate, a solder mask layer, a filter chip, a power amplifier and an exposable isolating film, wherein the solder mask layer is positioned on the front side of the substrate and provided with an opening, the filter chip is inversely arranged on the front side of the substrate and positioned at the opening of the solder mask layer, the power amplifier is electrically connected with the front side of the substrate, the exposable isolating film avoids the connection part of the power amplifier and the substrate and covers the filter chip and the solder mask layer, bumps for transmitting signals are uniformly distributed on one side surface of the filter chip facing the substrate, a certain distance is arranged between the lower surface of the filter chip and the front side of the substrate, and a sealed cavity is formed among the filter chip, the solder mask layer, the exposable isolating film and the substrate.
Moreover, the solid film is made of epoxy resin containing photosensitive polyimide, the ductility of the epoxy resin meets the requirements that the minimum distance between adjacent elements which can be filled is 100um, the thermal expansion coefficient is less than 100 ppm/DEG C, and the corrosion resistance can resist the high temperature of maximum 450 ℃.
Further, the exposable barrier film is formed by coating a photoresist.
Preferably, the resist properties of the photoresist are resistant to high temperatures up to 450 ℃.
Furthermore, the thickness of the exposable isolation film is 10-50 um.
And the injection molding layer covers the exposable isolation film, the substrate and the power amplifier.
The invention relates to a packaging method of a power amplifier module packaging structure, which comprises the following steps:
s1, paving a solder mask on the substrate, wherein a first solder mask opening is formed at the position where the filter chip is correspondingly arranged, and the first solder mask opening has a center retraction distance larger than 10um relative to the designed size of the filter chip; a second solder mask layer opening is formed at the position where the power amplifier is correspondingly arranged;
s2, preparing a filter chip with a salient point, wherein the height of the salient point is higher than that of the solder mask layer;
s3, soldering the filter chip with the salient points to the front surface of the substrate at the opening of the first solder mask layer through reflow soldering, wherein a certain distance is reserved between the lower surface of the filter chip and the front surface of the substrate;
s4, pasting an exposable isolation film on the upper surfaces of the substrate, the solder mask layer and the filter chip, controlling the thickness of the exposable isolation film to be between 10 and 50 microns, and forming a sealed cavity among the filter chip, the solder mask layer, the exposable isolation film and the substrate;
s5, removing the exposable isolating film at the opening of the second solder mask layer correspondingly provided with the power amplifier through exposure and development to expose the area of the substrate where die bonding and wire bonding are needed;
s6, mounting a power amplifier on the exposed area of the substrate through a die bonding process, and realizing the connection between the power amplifier and the substrate through a wire bonding process;
and S7, performing injection molding packaging to form an injection molding layer covering the filter chip, the solder mask and the power amplifier.
In step S3, the bumps are melted at high temperature, and the height of the bumps is reduced to make the lower surface of the filter chip overlap with the upper surface of the adjacent solder mask, so that a sealed cavity is formed between the filter chip, the solder mask and the substrate.
Further, the exposable barrier film is a solid film or is formed by coating a photoresist.
Has the advantages that: compared with the prior art, the invention has the following remarkable advantages:
(1) the invention is provided with the exposable isolation film, so that the power amplifier can be directly and electrically connected with the substrate, the low cost of bare chip packaging is realized, and the characteristic of high heat dissipation requirement of the power amplifier element is met;
(2) the invention adopts the solid film or the photoresist coating to form the exposable isolating film, can randomly select the surface covering area of the element, can give consideration to the cavity requirement when the bare chip of the filter is packaged, and can realize the requirement that the surface of the element of the power amplifier is not covered; therefore, the reliability requirement of the power amplifier is ensured while the low cost of bare filter chip packaging is realized;
(3) according to the invention, the upper surface of the opening of the solder mask layer is lapped with the lower surface of the filter chip, so that a sealed cavity is formed among the filter chip, the solder mask layer and the substrate, thus not only ensuring the existence of the cavity at the bottom of the filter chip, but also having the advantages of low cost and high reliability;
(4) the packaging method has the advantages of relatively simple process and low cost compared with the current mainstream process.
Drawings
Fig. 1(a) to fig. 1(e) are schematic views illustrating steps of the packaging method of the present invention.
Detailed Description
The technical scheme of the invention is further explained by combining the attached drawings.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
Spatial relational terms such as "under," "below," "under," "above," "over," and the like may be used herein for convenience in describing the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
As shown in fig. 1(e), the power amplifier module package structure of the present invention includes a substrate 1, a solder mask layer 2, a filter chip 3, a power amplifier 4, an isolation film 5, a bump 6, and an injection molding layer 7, wherein the injection molding layer 7 covers the exposable isolation film 5, the substrate 1, and the power amplifier 4. The solder mask layer 2 is positioned on the front surface of the substrate, different openings are formed in the solder mask layer 2, and the substrate is exposed at the openings, so that the filter chip 3 and the power amplifier 4 are conveniently and correspondingly arranged. The filter chip 3 is evenly provided with salient points 6 facing one side of the substrate, the salient points are solder balls and are used for transmitting signals, the filter chip 3 is connected with the front side of the substrate through the salient points 6, and a certain distance is arranged between the lower surface of the filter chip and the front side of the substrate. The power amplifier 4 is electrically connected to the front surface of the substrate by a wire, wherein the filter chip 3 and the power amplifier 4 are arranged side by side on the front surface of the substrate 1.
The position, where the power amplifier is avoided from being connected with the substrate, of the upper portion of the substrate 1 is provided with an isolation film 5, the isolation film covers the filter chip and the solder mask layer, a sealed cavity is formed among the filter chip 3, the solder mask layer 2, the isolation film 5 and the substrate 1, and the injection molding layer 7 avoids the sealed cavity. The isolation film (5) can be selected from an exposable solid film. The exposable solid film can be made of epoxy resin (PET & PP) containing photosensitive polyimide, generally requires better extensibility, the extensibility can meet the requirement that the minimum distance between adjacent elements which can be filled is 100um, and simultaneously requires lower thermal expansion coefficient, the thermal expansion coefficient is less than 100 ppm/DEG C, better corrosion resistance and corrosion resistance can resist the high temperature of maximum 450 ℃. Or the isolation film 5 is formed by coating a photoresist, the photoresist needs higher viscosity, adhesiveness and surface tension, so that the filter chip element can be completely protected and a bottom cavity can be formed, and meanwhile, the isolation film needs higher corrosion resistance, the corrosion resistance can resist the high temperature of 450 ℃ at most, so that the stability under the subsequent welding and reliability requirements can be ensured. The thickness of the isolation film is 10-50 um, if the isolation film is too thin, the isolation film is easy to break in a subsequent injection molding process, if the isolation film is too thick, the heat dissipation effect of an element is poor, and meanwhile, the bump is easy to break in the reliability process due to the fact that the thermal expansion coefficient of the thicker isolation film is larger. The invention is provided with the exposable isolation film, so that the power amplifier can be directly and electrically connected with the substrate, thereby realizing the characteristics of low cost of bare chip packaging and meeting the high heat dissipation requirement of the power amplifier element.
The invention relates to a packaging method of a power amplifier module packaging structure, which comprises the following steps:
s1, paving a solder mask on the substrate, wherein a first solder mask opening is formed at the position where the filter chip is correspondingly arranged, and the first solder mask opening has a center retraction distance larger than 10um relative to the designed size of the filter chip; a second solder mask layer opening is formed at the position where the power amplifier is correspondingly arranged;
s2, preparing a filter chip with bumps, wherein the bumps are higher than the solder mask, as shown in figure 1 (a);
s3, soldering the filter chip with salient points to the front surface of the substrate at the opening of the first solder mask layer by reflow soldering, wherein a certain distance is arranged between the lower surface of the filter chip and the front surface of the substrate; the bumps are melted under the action of high temperature, the height of the bumps is reduced, so that the lower surface of the filter chip is in lap joint with the upper surface of the adjacent solder mask, and a sealed cavity is formed among the filter chip, the solder mask and the substrate;
s4, pasting an exposable isolation film or coating photoresist on the upper surfaces of the substrate, the solder mask layer and the filter chip to form an isolation film, wherein the thickness of the isolation film is controlled to be 10-50 um, and a sealed cavity is formed among the filter chip, the solder mask layer, the isolation film and the substrate, as shown in figure 1 (b);
s5, removing the exposable isolation film or the photoresist at the opening of the second solder mask layer corresponding to the power amplifier by exposure and development to expose the area of the substrate where die attach bonding wires are required, as shown in fig. 1 (c);
s6, mounting a power amplifier on the exposed area of the substrate by a die bonding process, and connecting the power amplifier and the substrate by a wire bonding process, as shown in fig. 1 (d);
and S7, performing injection molding packaging to form an injection molding layer covering the filter chip, the solder mask layer and the power amplifier, as shown in figure 1 (e).
Claims (10)
1. A kind of power amplifier module encapsulated structure, characterized by that: including base plate (1), be located the base plate openly and have open-ended solder mask (2), flip-chip in the base plate openly and be located filter chip (3) of solder mask opening part and with the base plate openly power amplifier (4) of being connected of electricity and avoid power amplifier and base plate junction and cover exposable barrier film (5) on filter chip and solder mask, filter chip has bump (6) that are used for transmission signal towards base plate side equipartition, and there is the certain distance at the interval between filter chip lower surface and the base plate openly, and forms sealed cavity between filter chip (3), solder mask (2), barrier film (5) and the base plate (1).
2. The power amplifier module package of claim 1, wherein: the exposable isolating film (5) is a solid film.
3. The power amplifier module package of claim 2, wherein: the solid film is made of epoxy resin containing photosensitive polyimide, the ductility of the epoxy resin meets the requirements that the minimum distance between adjacent elements which can be filled is 100um, the thermal expansion coefficient is less than 100 ppm/DEG C, and the corrosion resistance can resist the high temperature of 450 ℃ at most.
4. The power amplifier module package of claim 1, wherein: the exposable isolating film (5) is formed by coating photoresist.
5. The power amplifier module package of claim 4, wherein: the corrosion resistance of the photoresist can resist the high temperature of 450 ℃ at most.
6. The power amplifier module package of claim 1, wherein: the thickness of the exposable isolation film is 10-50 um.
7. The power amplifier module package of claim 1, wherein: the device also comprises an injection molding layer (7) covering the exposable isolation film (5), the substrate (1) and the power amplifier (4).
8. A method for packaging the power amplifier module package structure according to claims 1-7, comprising the steps of:
s1, paving a solder mask on the substrate, wherein a first solder mask opening is formed at the position where the filter chip is correspondingly arranged, and the first solder mask opening has a center retraction distance larger than 10um relative to the designed size of the filter chip; correspondingly arranging a power amplifier and arranging a second solder mask opening;
s2, preparing a filter chip with a salient point, wherein the height of the salient point is higher than that of the solder mask layer;
s3, soldering the filter chip with the salient points to the front surface of the substrate at the opening of the first solder mask layer through reflow soldering, wherein a certain distance is reserved between the lower surface of the filter chip and the front surface of the substrate;
s4, pasting an exposable isolation film on the upper surfaces of the substrate, the solder mask layer and the filter chip, controlling the thickness of the exposable isolation film to be between 10 and 100 microns, and forming a sealed cavity among the filter chip, the solder mask layer, the exposable isolation film and the substrate;
s5, removing the exposable isolating film at the opening of the second solder mask layer correspondingly provided with the power amplifier through exposure and development to expose the area of the substrate where die bonding and wire bonding are needed;
s6, mounting a power amplifier on the exposed area of the substrate through a die bonding process, and realizing the connection between the power amplifier and the substrate through a wire bonding process;
and S7, performing injection molding packaging to form an injection molding layer covering the filter chip, the solder mask and the power amplifier.
9. The method for packaging a power amplifier module package structure as recited in claim 8, wherein the bumps are melted at a high temperature in step S3, and the height of the bumps is decreased to make the lower surface of the filter chip overlap the upper surface of the adjacent solder mask, so that a sealed cavity is formed between the filter chip, the solder mask and the substrate.
10. The packaging method of the power amplifier module packaging structure as claimed in claim 8, wherein the exposable isolation film is a solid film or is formed by coating a photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210840033.1A CN115085684A (en) | 2022-07-18 | 2022-07-18 | Power amplifier module packaging structure and packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210840033.1A CN115085684A (en) | 2022-07-18 | 2022-07-18 | Power amplifier module packaging structure and packaging method thereof |
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| Publication Number | Publication Date |
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| CN115085684A true CN115085684A (en) | 2022-09-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210840033.1A Pending CN115085684A (en) | 2022-07-18 | 2022-07-18 | Power amplifier module packaging structure and packaging method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115881655A (en) * | 2023-02-16 | 2023-03-31 | 成都频岢微电子有限公司 | Radio frequency front end module packaging process structure |
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2022
- 2022-07-18 CN CN202210840033.1A patent/CN115085684A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115881655A (en) * | 2023-02-16 | 2023-03-31 | 成都频岢微电子有限公司 | Radio frequency front end module packaging process structure |
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