CN115084811B - Ultra-wideband suspension film attenuator - Google Patents
Ultra-wideband suspension film attenuator Download PDFInfo
- Publication number
- CN115084811B CN115084811B CN202210926510.6A CN202210926510A CN115084811B CN 115084811 B CN115084811 B CN 115084811B CN 202210926510 A CN202210926510 A CN 202210926510A CN 115084811 B CN115084811 B CN 115084811B
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- microstrip line
- substrate
- ultra
- wideband
- section
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- 239000000725 suspension Substances 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/22—Attenuating devices
- H01P1/227—Strip line attenuators
Abstract
An ultra-wideband suspension film attenuator comprises a substrate, a pair of press belts, a pair of resistors, an input microstrip line and an output microstrip line, wherein the substrate is positioned between an upper air cavity and a lower air cavity; the pressing belts are symmetrically arranged on two sides of the top surface of the substrate; the input microstrip line and the output microstrip line are spaced and symmetrically arranged and are positioned between the press belts, and a preset interval is reserved between the sides of the input microstrip line and the output microstrip line and the inner side of the press belts; the square resistor is symmetrically arranged and perpendicular to the pressing belt, the square resistor comprises a first section located at the interval and a second section connected with the first section and located at the preset interval, the first sections of the pair of square resistors are separated by a preset distance, one side of the first section is connected with the input microstrip line, the other side of the first section is connected with the output microstrip line, and the second section is connected to the pressing belt. The ultra-wideband 3dB attenuator with DC-40G is realized in a suspension mode, the side surfaces are pressed and fixed, and the middle equivalent pi-shaped attenuation sheet resistance mode has higher attenuation precision and good standing wave performance.
Description
Technical Field
The application belongs to the technical field of radio frequency microwave passive devices, and relates to an ultra-wideband suspension film attenuator applied to a radio frequency microwave circuit.
Background
The attenuator is used as a passive device and is commonly applied to the field of modern radio frequency microwaves, plays a very important role in adjusting the level of an input signal and not distorting the signal, and the microstrip thin film attenuator mainly realizes attenuation by converting the absorption power of a resistive thin film material into heat.
In the current thin film attenuator, a physical substrate is mostly adopted, for example, high-resistance silicon is adopted as a substrate in CN105098305A, and GaAs (gallium arsenide) is adopted as a substrate in CN 113268912A. Such a physical substrate has a certain limitation in special applications, such as partial application of a thin film attenuator in a mechanical attenuator module, and the input/output reed needs to be switched between thin film attenuators with different attenuation amounts, so that the scheme of the physical substrate cannot meet the application of the scene.
Disclosure of Invention
In order to solve the application limitation of the related prior art aiming at different scenes, the ultra-wideband suspension thin film attenuator is provided, is arranged in a suspension mode, is fixed by side lamination, takes air as a substrate, realizes the ultra-wideband 3dB attenuator of DC-40G in a mode of middle equivalent pi-shaped attenuation sheet resistance, and has higher attenuation precision and good standing wave performance.
In order to achieve the above object, the present invention adopts the following technique:
an ultra-wideband suspension film attenuator comprises a substrate, a pair of press belts, a pair of resistors, an input microstrip line and an output microstrip line, wherein the substrate is positioned between an upper air cavity and a lower air cavity;
the pressing belts are symmetrically arranged on two sides of the top surface of the substrate;
the input microstrip line and the output microstrip line are spaced and symmetrically arranged and are positioned between the press belts, and a preset interval is reserved between the sides of the input microstrip line and the output microstrip line and the inner side of the press belts;
the square resistor is symmetrically arranged and perpendicular to the pressing belt, the square resistor comprises a first section located at the interval and a second section connected with the first section and located at the preset interval, the first sections of the pair of square resistors are separated by a preset distance, one side of the first section is connected with the input microstrip line, the other side of the first section is connected with the output microstrip line, and the second section is connected to the pressing belt.
Further, the width of the first section is greater than the width of the second section.
Further, the attenuator is arranged in the metal cavity, the two side walls of the metal cavity are provided with concave grooves, two sides of the substrate are assembled in the concave grooves, partial areas of the pressing belts are abutted against the inner walls of the concave grooves and are electrically communicated, the inner areas of the metal cavity above the substrate are upper air cavities, and the inner areas of the metal cavity below the substrate are lower air cavities.
Further, the surfaces of the laminated strip, the input microstrip line and the output microstrip line are plated with gold.
The invention has the beneficial effects that:
the ultra-wideband 3dB attenuator is different from the film attenuator in the prior art, the substrate and the pressing belt are arranged in a suspension mode through a simple structure, the substrate and the pressing belt are positioned between the upper air cavity and the lower air cavity, the substrate and the pressing belt are protruded out of the air cavity to realize suspension assembly and grounding with the metal cavity, the intermediate equivalent pi-shaped square resistor is arranged through the position and the shape of the square resistor, the ultra-wideband 3dB attenuator of DC-40G is finally realized, the attenuation precision and the good standing wave performance are high, and the limitation of the prior art to special application scenes is broken through.
Drawings
Fig. 1 is a perspective view of an ultra-wideband suspended membrane attenuator of an embodiment of the present application.
Fig. 2 is a perspective view of an ultra-wideband suspended membrane attenuator substrate in accordance with an embodiment of the present application.
Fig. 3 is an enlarged view of a portion a in fig. 2.
Fig. 4 is a top view of an ultra-wideband suspended thin film attenuator substrate according to an embodiment of the present application.
Fig. 5 is a partial cross-sectional view of an ultra-wideband suspended membrane attenuator of an embodiment of the present application in a metal cavity.
Fig. 6 is an enlarged view of the portion B in fig. 5.
Fig. 7 is a simulation plot of an ultra-wideband suspended membrane attenuator in an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings, but the described embodiments of the present invention are some, but not all embodiments of the present invention.
The embodiment of the application provides an ultra-wideband suspension film attenuator, which adopts a mode that two independent square resistors are adopted, and side surfaces are connected with gold-plated surfaces; then calculating the resistance value of the sheet resistance to be 100 omega, and designing an equivalent model; finally, setting variables for simulation, and finding an optimal scheme.
Specifically, as shown in fig. 1 and 5, the ultra-wideband suspension film attenuator of the present embodiment is located in a metal cavity 10, and includes an upper air cavity 11 and a lower air cavity 12 formed in the metal cavity 10, a substrate 2 arranged between the upper air cavity 11 and the lower air cavity 12 in a suspension manner, a pair of press-fit strips 3 arranged on the top surface of the substrate 2, a pair of resistors 5, an input microstrip line 41 and an output microstrip line 42, wherein an inner area of the metal cavity 10 above the substrate 2 is the upper air cavity 11, and an inner area of the metal cavity 10 below the substrate 2 is the lower air cavity 12.
Specifically, the substrate 2 is a ceramic substrate, and AL is used 2 O 3 As a medium.
Specifically, as shown in fig. 5 to 6, concave grooves 10 are formed on two side walls of the metal cavity 1 and used for suspending the mounting substrate 2, and two sides of the substrate 2 are assembled in the concave grooves 10, so that at least partial areas of two sides of the substrate 2 protrude out of the upper air cavity 11 and the lower air cavity 12, suspension arrangement is realized, and the pressing belt 3 is convenient to ground.
As shown in fig. 1-4, the surface of the pressing belt 3 is gold-plated, and symmetrically disposed on two sides of the top surface of the substrate 2, and a part of the area of the pressing belt 3 is located outside the upper air chamber 11, and is abutted against and electrically connected to the inner wall of the recess 10 to achieve grounding, and the other area is located inside the upper air chamber 11. In this example, the laminating belt 3 is arranged along the length direction of the substrate 2.
As shown in fig. 1 to 4, the input microstrip line 41 and the output microstrip line 42 are arranged at intervals and symmetrically, and are located between the laminated strips 3. The surfaces of the input microstrip line 41 and the output microstrip line 42 are gold-plated. Alternatively, one end of the input microstrip line 41 is disposed flush with one end of the substrate 2, one end of the output microstrip line 42 is disposed flush with the other end of the substrate 2, and the other end of the input microstrip line 41 has a predetermined gap with the other end of the output microstrip line 42. As can be seen from fig. 4, in this example, the widths and lengths of the input microstrip line 41 and the output microstrip line 42 are matched, and the widths of the input microstrip line 41 and the output microstrip line 42 are significantly larger than the width of the bonding tape 3, and the sides of the input microstrip line 41 and the output microstrip line 42 have a predetermined spacing from the inner side of the bonding tape 3, and the predetermined spacing from both sides are equal. The input microstrip line 41 and the output microstrip line 42 are respectively connected to the outside through gold wires.
Specifically, in this example, the sheet resistor 5 is symmetrically disposed and perpendicular to the laminating belt 3, specifically disposed in the middle of the substrate 2, and disposed in the width direction, as shown in fig. 1 to 4, the sheet resistor 5 includes a first section 51 located at a gap between the input microstrip line 41 and the output microstrip line 42, and a second section 52 connected to the first section 51 and located at the predetermined distance. The first sections 51 of the pair of resistors 5 are spaced apart by a predetermined distance, one side of the first sections 51 is connected to the input microstrip line 41, the other side is connected to the output microstrip line 42, and the second sections 52 are connected to the laminated strip 3. The width of the first section 51 is greater than the width of the second section 52.
In this example, different attenuation values can be set by the setting of the gap between the input microstrip line 41 and the output microstrip line 42, and the arrangement position, shape, and size setting of different sections of the sheet resistor 5. The strip 3 is not only spaced from the intermediate input and output microstrip lines 41 and 42, but also has a second section 52 of sheet resistance connected thereto, respectively, and allows a partial area to be brought into contact with the metal cavity 1 for grounding by means of the suspension mounting described above.
In some examples, the thickness of the substrate 2 may be 10 mils.
Fig. 6 is a simulation graph of the ultra-wideband suspended membrane attenuator of the present embodiment, in which: s21 is an attenuation value, S11 is an input standing wave, S22 is an output standing wave, and it can be seen that the attenuation value S21 ranges from-3 dB to-3.28 dB in the ultra-wide bandwidth of DC-40G, so that the high accuracy is achieved; the worst value of the return loss S22 is hostile-27 dB, and the standing wave converted by the return loss S22 is not more than 1.09, so that the excellent standing wave characteristic is realized.
The foregoing is merely a preferred embodiment of the present application and is not intended to limit the present application, and it will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit and scope of the present application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.
Claims (7)
1. An ultra-wideband suspension film attenuator is characterized by comprising a substrate (2) positioned between an upper air cavity (11) and a lower air cavity (12), a pair of pressing belts (3) arranged on the top surface of the substrate (2), a pair of resistors (5), an input microstrip line (41) and an output microstrip line (42);
the pressing belts (3) are symmetrically arranged on two sides of the top surface of the base plate (2);
the input microstrip line (41) and the output microstrip line (42) are arranged at intervals and symmetrically and are positioned between the press belts (3), and a preset interval is reserved between the sides of the input microstrip line (41) and the output microstrip line (42) and the inner sides of the press belts (3);
the sheet resistors (5) are symmetrically arranged and perpendicular to the press-fit belt (3), the sheet resistors (5) comprise first sections (51) positioned at the intervals and second sections (52) connected with the first sections (51) and positioned at the preset intervals, the first sections (51) of the pair of sheet resistors (5) are at preset distances, one side of each first section (51) is connected with an input microstrip line (41), the other side of each first section is connected with an output microstrip line (42), the second sections (52) are connected to the press-fit belt (3), and the width of each first section (51) is larger than that of each second section (52);
the attenuator is arranged in the metal cavity (1), concave grooves (10) are formed in two side walls of the metal cavity (1), two sides of the substrate (2) are assembled in the concave grooves (10), partial areas of the pressing belts (3) are in contact with the inner walls of the concave grooves (10) and are electrically conducted, an upper air cavity (11) is arranged in an inner area of the metal cavity (1) above the substrate (2), and a lower air cavity (12) is arranged in an inner area of the metal cavity (1) below the substrate (2).
2. Ultra wideband suspended membrane attenuator according to claim 1, characterized in that one end of the input microstrip line (41) is flush with one end of the substrate (2), one end of the output microstrip line (42) is flush with the other end of the substrate (2), the other end of the input microstrip line (41) has a predetermined gap with the other end of the output microstrip line (42), and the first section (51) is located at the predetermined gap.
3. Ultra-wideband suspension membrane attenuator according to claim 1, characterized in that at least part of the areas on both sides of the substrate (2) protrude outside the upper air chamber (11) and the lower air chamber (12), part of the area of the press-fit belt (3) is located outside the upper air chamber (11), and the rest of the area is located inside the upper air chamber (11).
4. An ultra wideband suspended membrane attenuator according to claim 3, characterized in that the area of the laminating belt (3) located outside the upper air chamber (11) is larger than the area of the area located inside the upper air chamber (11).
5. Ultra-wideband suspended membrane attenuator according to claim 1, characterized in that the surfaces of the press-fit strip (3), the input microstrip line (41) and the output microstrip line (42) are gold-plated.
6. Ultra-wideband suspended membrane attenuator according to claim 1, characterized in that the substrate (2) is a ceramic substrate.
7. Ultra-wideband suspended membrane attenuator according to claim 1, characterized in that the input microstrip line (41) and the output microstrip line (42) are each intended to be connected to the outside by gold wires.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210926510.6A CN115084811B (en) | 2022-08-03 | 2022-08-03 | Ultra-wideband suspension film attenuator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210926510.6A CN115084811B (en) | 2022-08-03 | 2022-08-03 | Ultra-wideband suspension film attenuator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115084811A CN115084811A (en) | 2022-09-20 |
| CN115084811B true CN115084811B (en) | 2023-07-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210926510.6A Active CN115084811B (en) | 2022-08-03 | 2022-08-03 | Ultra-wideband suspension film attenuator |
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| Country | Link |
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| CN (1) | CN115084811B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114142196A (en) * | 2021-11-29 | 2022-03-04 | 中国电子科技集团公司第四十三研究所 | Resistance type attenuator |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003273606A (en) * | 2002-03-14 | 2003-09-26 | Mitsubishi Electric Corp | Suspended line resistor circuit |
| US6646527B1 (en) * | 2002-04-30 | 2003-11-11 | Agilent Technologies, Inc. | High frequency attenuator using liquid metal micro switches |
| CN201804989U (en) * | 2010-07-30 | 2011-04-20 | 合肥佰特微波技术有限公司 | Rectangular cavity fixed attenuator |
| CN105703046A (en) * | 2016-04-27 | 2016-06-22 | 镇江南方电子有限公司 | Ultra broadband medium cavity attenuator |
| CN108767384A (en) * | 2018-08-30 | 2018-11-06 | 安徽禄讯电子科技有限公司 | A kind of high power ultra wide band diectric attenuation device |
| CN209592281U (en) * | 2019-05-29 | 2019-11-05 | 四川省天亚通科技有限公司 | A kind of suspension micro-strip attenuator |
| CN112003570B (en) * | 2020-08-31 | 2022-07-19 | 中电科思仪科技股份有限公司 | Millimeter wave noise source with high-frequency broadband and preparation method thereof |
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- 2022-08-03 CN CN202210926510.6A patent/CN115084811B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114142196A (en) * | 2021-11-29 | 2022-03-04 | 中国电子科技集团公司第四十三研究所 | Resistance type attenuator |
Non-Patent Citations (3)
| Title |
|---|
| Qi Zhong ; Xiaotong Liang ; Zewen Liu.Design of single thin film resistor network as 20dB attenuator for DC-20GHz application.《2015 16th International Conference on Electronic Packaging Technology (ICEPT)》.2015,297-300. * |
| 基于π型多晶硅电阻网络的片上衰减器;郭昕；李孟委；龚著浩；刘泽文;《清华大学学报（自然科学版）》;第55卷(第11期);1264-1268 * |
| 薄膜衰减器的设计及性能研究;冯毅龙; 杨俊锋; 丁明建; 庄严;《广东化工》;第44卷(第351期);227-229 * |
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| CN115084811A (en) | 2022-09-20 |
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Denomination of invention: A Ultra Wideband Suspended Thin Film Attenuator Granted publication date: 20230721 Pledgee: Chengdu Rural Commercial Bank Co.,Ltd. Jinquan Branch Pledgor: Chengdu Weibin Technology Co.,Ltd. Registration number: Y2024980012461 |