CN115084310A - LED for optical communication and preparation method thereof - Google Patents
LED for optical communication and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Abstract
The invention provides an LED for optical communication and a preparation method thereof, wherein the LED comprises a conductive substrate, a metal bonding layer, a metal reflecting layer, an n-type GaN-1 layer, an i-GaN layer, a p-type GaN layer, a multi-quantum well layer, an n-type GaN-2 layer and an insulating layer which are sequentially connected from bottom to top. The p-i-n structure GaN-based photoelectric device is added above the p-type GaN layer, so that more holes can be provided for the p-type GaN layer while ultraviolet light is detected, the carrier injection efficiency is improved, more balanced carrier concentration is realized, the carrier recombination efficiency is improved, and the device can be used in the field of visible light communication.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to an LED for optical communication and a preparation method thereof.
Background
LEDs are considered to be ideal light sources for Visible Light Communication (VLC) systems because of their excellent photovoltaic performance and physical characteristics of semiconductor devices that turn on and off flicker at high speed. In order to improve the communication speed and the communication quality of the whole communication system, under the condition of keeping a certain luminous power, the improvement of the modulation bandwidth (-3dB bandwidth) of the LED has very important significance. The modulation bandwidth of current commercial LEDs is usually only a few mhz to ten mhz, which is far from meeting the requirement of high-speed visible light communication. To achieve a more compact and efficient transceiver module, integration of multiple optoelectronic devices on a single chip can improve device performance, to overcome the fundamental limitations of materials and physical properties, to enable simultaneous implementation of detection, communication and illumination requirements, and to overcome the reduction in recombination efficiency caused by severe asymmetry of electron and hole concentrations.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art described above. To this end, the invention proposes, in a first aspect, an LED for optical communication, which integrates detection, communication and illumination.
The second aspect of the invention provides a preparation method of the LED for optical communication.
According to a first aspect of the invention, an LED for optical communication is provided, which comprises a conductive substrate, a metal bonding layer, a metal reflecting layer, an n-type GaN-1 layer, an i-GaN layer, a p-type GaN layer, a multi-quantum well layer, an n-type GaN-2 layer and an insulating layer which are sequentially connected from bottom to top; the LED further comprises an N electrode and a P electrode, wherein the N electrode penetrates from the N-type GaN-1 layer to the N-type GaN-2 layer and forms ohmic contact with the N-type GaN-2 layer, and the P electrode is in contact with the P-type GaN layer to form electric conduction.
According to the invention, the p-i-n structure GaN detector structure is added above the p-type GaN layer, so that ultraviolet light can be detected, more holes are provided for the p-type GaN layer after the ultraviolet light is injected, the carrier injection efficiency is improved, more balanced carrier concentration is realized, and the improvement of the carrier recombination efficiency is facilitated.
In some embodiments of the present invention, the conductive substrate is a Si substrate and has a thickness of 50 μm to 500 μm.
In some preferred embodiments of the present invention, the metal bonding layer comprises an alloy of at least one selected from Ni, Au, Sn, Ti; preferably, the thickness of the metal bonding layer is 0.5 μm to 5.0 μm.
In some more preferred embodiments of the present invention, the metal reflective layer is a Ag or Al metal layer having a thickness of 0.2 μm to 4.0 μm.
In some more preferred embodiments of the present invention, each of the n-type GaN-1 layer and the n-type GaN-2 layer has a thickness of 0.3 to 5 μm.
In some more preferred embodiments of the present invention, the i-GaN layer has a thickness of 10nm to 100 nm.
In some more preferred embodiments of the present invention, the p-type GaN layer has a thickness of 10nm to 300 nm.
In some more preferred embodiments of the present invention, the thickness of the multiple quantum well layer is 20nm to 100 nm.
In some more preferred embodiments of the present invention, the insulating layer is SiO 2 An insulating layer with a thickness of 100nm to 2000 nm.
In some more preferred embodiments of the invention, the electrode comprises an alloy of at least one of Ti, Al, Au, and Pt; preferably, the thickness of the electrode is 2 μm to 4 μm.
According to a second aspect of the present invention, there is provided a method for manufacturing the LED for optical communication, comprising the steps of:
s1: growing a buffer layer, an n-type GaN-2 layer, a multi-quantum well layer, a p-type GaN layer, an i-GaN layer and an n-type GaN-1 layer on an epitaxial substrate;
s2: depositing a metal reflecting layer on the N-type GaN-1 layer, arranging a groove penetrating through the N-type GaN-2 layer on the metal reflecting layer, depositing an N electrode in the groove to form ohmic contact with the N-type GaN-2 layer, depositing a metal bonding layer, and bonding a conductive substrate to obtain an epitaxial wafer;
s3: turning the epitaxial wafer upside down by 180 degrees in S2, and then stripping the epitaxial substrate and the buffer layer to expose the n-type GaN-2 layer;
s4: and depositing an insulating layer on the n-type GaN-2 layer exposed in the step S3, setting a step structure penetrating to the P-type GaN layer, and depositing a P electrode on the step structure to form ohmic contact with the P-type GaN layer.
In some embodiments of the present invention, in S3, the epitaxial substrate is stripped by any one of mechanical thinning, chemical polishing and laser stripping.
In some preferred embodiments of the present invention, in S3, the buffer layer is stripped using ICP dry etching.
In some more preferred embodiments of the present invention, in S4, the groove is prepared by photolithography stripping, ICP etching.
The invention has the beneficial effects that:
according to the invention, the p-i-n structure GaN-based photoelectric device is added above the p-type GaN layer, so that more holes can be provided for the p-type GaN layer while ultraviolet light is detected, the carrier injection efficiency is improved, more balanced carrier concentration is realized, the improvement of the carrier recombination efficiency is facilitated, and the photoelectric device can be used in the field of visible light communication.
Drawings
The invention is further described with reference to the following figures and examples, in which:
fig. 1 is a schematic sectional view of the structure of an LED chip for visible light communication according to embodiments 1 and 2 of the present invention.
FIG. 2 is a schematic cross-sectional view of a structure of an LED chip according to a comparative example of the present invention.
Reference numerals: 1. a conductive substrate; 2. a metal bonding layer; 3. a metal reflective layer; 4. an n-type GaN-1 layer; 5. an i-GaN layer; 6. a p-type GaN layer; 7. a multiple quantum well layer; 8. an n-type GaN-2 layer; 9. an insulating layer; 10. an N electrode; 11. a P electrode; 901. a first insulating layer; 902. a second insulating layer.
Detailed Description
The concept and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments to fully understand the objects, features and effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and those skilled in the art can obtain other embodiments without inventive effort based on the embodiments of the present invention, and all embodiments are within the protection scope of the present invention.
Example 1
In this embodiment, an LED for visible light communication is prepared, and a schematic structural diagram of the LED is shown in fig. 1, and includes a conductive substrate 1, a metal bonding layer 2, a metal reflective layer 3, an n-type GaN-1 layer 4, an i-GaN layer 5, a p-type GaN layer 6, a multi-quantum well layer 7, an n-type GaN-2 layer 8, and an insulating layer 9, which are sequentially connected from bottom to top; the LED further comprises an N electrode 10 and a P electrode 11, wherein the N electrode 10 penetrates from the N-type GaN-1 layer 4 to the N-type GaN-2 layer 8 and forms ohmic contact with the N-type GaN-2 layer 8, and the P electrode 11 is in contact with the P-type GaN layer 6 to form electric conduction.
The conductive substrate 1 is a Si substrate with the thickness of 400 μm; the metal bonding layer 2 is Ni/Au, and the thickness is 600 nm; the metal reflecting layer 3 is an Ag metal layer with the thickness of 400 nm; the thickness of the n-type GaN-1 layer 4 is 300 nm; the thickness of the i-GaN layer 5 is 10 nm; the thickness of the p-type GaN layer 6 is 200 nm; an InGaN/GaN MQW layer 7 of 50nm thickness; an n-type GaN-2 layer 8 with a thickness of 2 μm; the insulating layer 9 is SiO 400nm thick 2 An insulating layer; the LED further comprises an N electrode 10 and a P electrode 11, wherein the N electrode 10 penetrates from the N-type GaN-1 layer 4 to the N-type GaN-2 layer 8 and is in ohmic contact with the N-type GaN-2 layer 8, and the P electrode 11 is in contact with the P-type GaN layer 6 to be electrically conducted. The metal electrode is a composite electrode consisting of Ti/Al/Ti/Au.
The preparation method of the LED for visible light communication comprises the following steps:
s1: taking an epitaxial substrate (Si substrate), and growing an AlGaN buffer layer, an n-type GaN-2 layer 8, an InGaN/GaN multi-quantum well layer 7, a p-type GaN layer 6, an i-GaN layer 5 and a GaN-1 layer 4 on the Si substrate in sequence by adopting MOCVD equipment to obtain an LED epitaxial wafer;
s2: depositing a metal reflecting layer 3 on the N-type GaN-1 layer 4 by adopting electron beam evaporation equipment, preparing a groove-shaped structure penetrating through the N-type GaN-2 layer 8 by utilizing an etching process, depositing a metal N electrode 10 in the groove and forming ohmic contact with the N-type GaN-2 layer 8; depositing a metal bonding layer 2 by using electron beam evaporation equipment, bonding and connecting the metal bonding layer 2 with a conductive substrate 1 through a metal bonding process, applying pressure from the center of the conductive substrate 1 in the bonding process, gradually expanding towards the edge, bonding at the temperature of 300 ℃ for 2h after the bonding pressure reaches 2MPa, then annealing, taking out, sending into an annealing furnace, preserving heat at the temperature of 200 ℃ for 30min, and forming firm bonding between pre-bonded wafers;
s3: mechanically grinding an epitaxial substrate (Si substrate) in the wafer in the S2, immersing the epitaxial substrate in a mixed solution of hydrofluoric acid, glacial acetic acid and nitric acid, corroding until the epitaxial substrate disappears, and removing the AlGaN buffer layer by adopting ICP (inductively coupled plasma) etching to expose the n-type GaN-2 layer 8;
s4: growing an insulating layer 9 on the exposed n-type GaN-2 layer 8;
s5: and preparing a step structure penetrating through the P-type GaN layer 6 by using an etching process, and depositing a P electrode 11 on the step structure to form corresponding ohmic contact with the P-type GaN layer 6.
Example 2
In this example, an LED for visible light communication was prepared, which is different from example 1 in the growth sequence of the epitaxial material on the substrate, and the thickness of each layer was the same as that in example 1, and the specific preparation process was as follows:
s1: taking an epitaxial substrate (Si substrate), and growing an AlGaN buffer layer, a GaN-1 layer 4, an i-GaN layer 5, a p-type GaN layer 6, an InGaN/GaN multi-quantum well layer 7 and an n-type GaN-2 layer 8 on the Si substrate in sequence by adopting MOCVD equipment to obtain an LED epitaxial wafer;
s2: depositing a metal reflecting layer 3 on the N-type GaN-2 layer 8 by adopting electron beam evaporation equipment, preparing a groove-shaped structure penetrating through the N-type GaN-1 layer 4 by utilizing an etching process, and depositing a metal N electrode in the groove-shaped structure to form ohmic contact with the N-type GaN-1 layer 4;
s3: on the basis of S2, depositing a metal bonding layer 2 by using electron beam evaporation equipment, bonding and connecting the metal bonding layer 2 with a conductive substrate 1 through a metal bonding process, applying pressure from the center of the conductive substrate 1 in the bonding process, gradually expanding towards the edge, bonding for 2 hours at the temperature of 300 ℃ after the bonding pressure reaches 2MPa, then annealing, taking out, sending into an annealing furnace, preserving heat for 30 minutes at the temperature of 200 ℃, and forming firm bonding between pre-bonded wafers;
s4: mechanically grinding an epitaxial substrate (Si substrate) in the wafer in the S3, immersing the epitaxial substrate in a mixed solution of hydrofluoric acid, glacial acetic acid and nitric acid, corroding until the epitaxial substrate disappears, and removing the AlGaN buffer layer by adopting ICP (inductively coupled plasma) etching to expose the n-type GaN-1 layer 4;
s5: growing an insulating layer 9 on the n-type GaN-1 layer 4 by PECVD;
s6: and preparing a step structure penetrating through the P-type GaN layer 6 by using an etching process, depositing a P electrode 11 on the step structure, and forming corresponding ohmic contact with the P-type GaN layer 6.
Comparative example
This comparative example prepared an LED chip, as shown in fig. 2, which, from bottom to top, was in order: the multilayer substrate comprises a conductive substrate 1, a metal bonding layer 2, a first insulating layer 901, a metal reflecting layer 4, a p-type GaN layer 6, a multi-quantum well layer 7, an n-type GaN layer 8 and a second insulating layer 902; the LED further comprises an N electrode 10 and a P electrode 11, wherein the N electrode 10 penetrates through the N-type GaN layer 8 to form ohmic contact, and the P electrode 11 is located above the P-type GaN layer 6.
S1: taking an epitaxial substrate (Si substrate), and growing an AlGaN buffer layer, an n-type GaN layer 8, an InGaN/GaN multi-quantum well layer 7 and a p-type GaN layer 6 on the Si substrate in sequence by adopting MOCVD equipment to obtain an LED epitaxial wafer;
s2: depositing a metal reflecting layer 4 on the p-type GaN layer 6 by adopting electron beam evaporation equipment, preparing a groove-shaped structure penetrating through the N-type GaN layer 8 by utilizing an etching process, and depositing a metal N electrode 10 in the groove-shaped structure to form ohmic contact;
s3: on the basis of S2, respectively depositing a second insulating layer 902 and a metal bonding layer 2 by utilizing PECVD and electron beam evaporation equipment, bonding and connecting the second insulating layer 902 and the metal bonding layer 2 with a conductive substrate 1 through a metal bonding process, applying pressure from the center of the conductive substrate 1 in the bonding process, gradually expanding towards the edge, bonding for 2 hours at the temperature of 300 ℃ after the bonding pressure reaches 2MPa, then annealing, taking out, sending into an annealing furnace, preserving heat for 30 minutes at the temperature of 200 ℃, and forming firm bonding between pre-bonded wafers;
s4: mechanically grinding an epitaxial substrate (Si substrate) in the wafer in the S3, immersing the epitaxial substrate in a mixed solution of hydrofluoric acid, glacial acetic acid and nitric acid, corroding until the epitaxial substrate disappears, and removing the AlGaN buffer layer by adopting ICP (inductively coupled plasma) etching to expose the n-type GaN-2 layer 8;
s5: growing a first insulating layer 901 on the n-type GaN-2 layer 8 by PECVD;
s6: and preparing a step structure penetrating through the P-type GaN layer 6 by using an etching process, depositing a P electrode 11 on the step structure, and forming corresponding ohmic contact with the P-type GaN layer 6.
The LED chips prepared in example 1, example 2 and comparative example were subjected to a performance test by irradiating ultraviolet light while performing a 100mA current test, and the results are shown in table 1:
TABLE 1
| Item | Example 1 | Example 2 | Comparative example |
| Bandwidth (MHz) | 63 | 60 | 35 |
As shown in table 1, the modulation bandwidths of the LED chips of examples 1 and 2 are higher than those of the LED chips of the comparative example, and the main reason is that the carrier injection efficiency can be improved after the irradiation of the ultraviolet light, and the radiative recombination efficiency in the active region is improved.
The embodiments of the present invention have been described in detail, but the present invention is not limited to the embodiments, and various changes can be made without departing from the gist of the present invention within the knowledge of those skilled in the art. Furthermore, the embodiments of the present invention and features of the embodiments may be combined with each other without conflict.
Claims (10)
1. An LED for optical communications, characterized by: the LED chip comprises a conductive substrate, a metal bonding layer, a metal reflecting layer, an n-type GaN-1 layer, an i-GaN layer, a p-type GaN layer, a multi-quantum well layer, an n-type GaN-2 layer and an insulating layer which are sequentially connected from bottom to top; the LED further comprises an N electrode and a P electrode, wherein the N electrode penetrates from the N-type GaN-1 layer to the N-type GaN-2 layer and forms ohmic contact with the N-type GaN-2 layer, and the P electrode is in contact with the P-type GaN layer to form electric conduction.
2. The LED for optical communication of claim 1, wherein: the thickness of the n-type GaN-1 layer and the thickness of the n-type GaN-2 layer are both 0.3-5 mu m.
3. The LED for optical communication of claim 1, wherein: the thickness of the i-GaN layer is 10 nm-100 nm.
4. The LED for optical communication of claim 1, wherein: the thickness of the p-type GaN layer is 10 nm-300 nm.
5. The LED for optical communication of claim 1, wherein: the thickness of the multi-quantum well layer is 20 nm-100 nm.
6. The LED for optical communication of claim 1, wherein: the metal bonding layer comprises at least one alloy selected from Ni, Au, Sn and Ti; the thickness of the metal bonding layer is 0.5-5.0 μm.
7. The LED for optical communication of claim 1, wherein: the metal reflecting layer is an Ag or Al metal layer, and the thickness of the metal reflecting layer is 0.2-4.0 mu m.
8. The LED for optical communication of claim 1, wherein: the insulating layer is SiO 2 An insulating layer with a thickness of 100nm to 2000 nm.
9. A method for manufacturing the LED for optical communication according to any one of claims 1 to 8, wherein: the method comprises the following steps:
s1: growing a buffer layer, an n-type GaN-2 layer, a multi-quantum well layer, a p-type GaN layer, an i-GaN layer and an n-type GaN-1 layer on an epitaxial substrate;
s2: depositing a metal reflecting layer on the N-type GaN-1 layer, arranging a groove penetrating through the N-type GaN-2 layer on the metal reflecting layer, depositing an N electrode in the groove to form ohmic contact with the N-type GaN-2 layer, depositing a metal bonding layer, and bonding a conductive substrate to obtain an epitaxial wafer;
s3: turning the epitaxial wafer upside down by 180 degrees in S2, and then stripping the epitaxial substrate and the buffer layer to expose the n-type GaN-2 layer;
s4: and depositing an insulating layer on the n-type GaN-2 layer exposed in the step S3, setting a step structure penetrating to the P-type GaN layer, and depositing a P electrode on the step structure to form ohmic contact with the P-type GaN layer.
10. The method of claim 9, wherein: and in S4, preparing the groove by photoetching stripping and ICP etching.
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| US20020074553A1 (en) * | 2000-12-15 | 2002-06-20 | David Starikov | One-chip micro-integrated optoelectronic sensor |
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