CN115084293A - Heterojunction photoelectric detector - Google Patents
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- 230000010287 polarization Effects 0.000 claims abstract description 63
- 238000010521 absorption reaction Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 22
- 230000005684 electric field Effects 0.000 abstract description 12
- 238000005286 illumination Methods 0.000 abstract description 9
- 230000009471 action Effects 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 323
- 229910002704 AlGaN Inorganic materials 0.000 description 32
- 238000001514 detection method Methods 0.000 description 15
- 239000013078 crystal Substances 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 230000005533 two-dimensional electron gas Effects 0.000 description 8
- 239000004047 hole gas Substances 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910003363 ZnMgO Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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Abstract
The invention discloses a heterojunction photoelectric detector, which comprises a substrate and/or a buffer layer and a layer working device, wherein the working device comprises an interface lower layer and an interface upper layer which are sequentially arranged on the substrate and/or the buffer layer from bottom to top; the interface lower layer and/or the interface upper layer are/is provided with an anode contact electrode and a cathode contact electrode; the interface lower layer and the interface upper layer are of heterogeneous structures, and polarization charges are generated in the interface lower layer and the interface upper layer. The invention mainly utilizes the polarization charges in the upper layer and the lower layer of the heterojunction interface and the polarization electric field generated by the polarization charges to exhaust the thin film layer which is used as the absorption layer and the channel layer on one side of the heterojunction interface, so that the thin film layer is in a high resistance state under the condition of no illumination, and the detector has extremely low dark current; under illumination, photo-generated electrons and holes are separated, the depletion effect of a polarization electric field is weakened, namely the channel layer is gradually restored to be conductive under the action of photovoltage; at the same time, the retention of photogenerated minority induces photoconductive gain.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric detectors, in particular to a heterojunction photoelectric detector.
Background
The photoelectric detection technology has important application in various fields such as national defense, civil use, scientific research and the like. According to the difference of detection bands, the method can be divided into infrared detection, visible light detection, ultraviolet detection and the like, wherein the infrared detection is mainly applied to the aspects of infrared imaging, infrared light communication and the like; the visible light detection is mainly applied to the aspects of cameras, visible light communication, underwater light communication, automatic driving and the like; the ultraviolet detection is mainly applied to the aspects of flame alarm, ultraviolet measurement and the like.
Among various key indexes of the photoelectric detector, responsivity is an extremely important item, and determines the photoelectric conversion capability of the detector. The detector with high responsivity is very important for the application, especially for the application scene needing to sense weak light signals. In current photo-detection technology, the detector is required to have internal gain to realize high responsivity detection. Currently, photomultiplier tubes based on vacuum electrons and avalanche photodetectors based on semiconductors are the most widely used gain-type photodetectors. The photomultiplier has high photoelectric gain, but the device has large volume and high working voltage, and needs matched devices such as cooling devices, and the like, so the use is inconvenient; the avalanche photodetector belongs to a semiconductor device, is more portable and flexible, but has high requirements on the quality of semiconductor material crystals, so that the avalanche photodetector is greatly limited in material selection and application scenes. In addition, the photoconductive detector has a certain application range due to simple manufacture and internal gain, but the application of the photoconductive detector in the aspect of weak light signal detection is limited due to the problem of low detection degree caused by high dark current. Therefore, the development of a high-performance semiconductor photodetector with simple structure and fabrication process, low dark current and high gain is still an urgent need in various application fields.
Disclosure of Invention
The invention aims to overcome at least one defect (deficiency) of the prior art and provides a heterojunction photoelectric detector which has the advantages of simple manufacturing process and high responsivity.
In order to achieve the technical effect, the technical scheme adopted by the invention is as follows:
a heterojunction photoelectric detector comprises a substrate and/or a buffer layer and a working device, wherein the working device comprises an interface lower layer and an interface upper layer which are sequentially arranged on the substrate and/or the buffer layer from bottom to top;
the interface lower layer and/or the interface upper layer are/is provided with an anode contact electrode and a cathode contact electrode;
the interface lower layer and the interface upper layer are of heterogeneous structures, and polarization charges are generated in the interface lower layer and the interface upper layer.
In the technical scheme, the interface lower layer and the interface upper layer are designed into the heterostructure, so that a heterojunction interface is generated between the interface lower layer and the interface upper layer, and polarization charges are generated in the interface lower layer and the interface upper layer conveniently.
The invention mainly utilizes the polarization charges in the upper layer and the lower layer of the heterojunction interface and the polarization electric field generated by the polarization charges to exhaust the thin film layer which is used as the absorption layer and the channel layer on one side of the heterojunction interface, so that the thin film layer is in a high resistance state under the condition of no illumination, and the detector has extremely low dark current; under illumination, photo-generated electrons and holes are separated, the depletion effect of a polarization electric field is weakened, namely the channel layer is gradually restored to be conductive under the action of photovoltage; meanwhile, the detention of the photo-generated holes induces photoconductive gain, so that extremely high photocurrent gain and photo-dark current ratio are generated, and the photo-detector has the advantages of strong photoelectric gain and high detection sensitivity.
In one embodiment, the material of the semiconductor component is a polarized semiconductor material.
In one embodiment, the working device is fabricated on a polar or semi-polar face of the poled semiconductor material.
In the technical scheme, the polarized semiconductor material is provided with a polar surface or a semipolar surface, and the working device is prepared on the polar surface or the semipolar surface of the polarized semiconductor material so as to generate polarized charges in the lower interface layer and the upper interface layer. Wherein negative polarization charge or positive polarization charge can be generated at the interface of the interface lower layer and the interface upper layer. When negative polarization charges are generated at the interface, the electron potential near the interface is raised; when a positive polarization charge is generated at the interface, a decrease in the electron potential near the interface will result.
In one embodiment, a negative polarization charge or a positive polarization charge is generated at the interface of the lower interface layer and the upper interface layer;
when negative polarization charges are generated at the interface of the interface lower layer and the interface upper layer, the interface lower layer and the interface upper layer adopt conducting layers with n-type conducting types;
when positive polarization charges are generated at the interface of the interface lower layer and the interface upper layer, the interface lower layer and the interface upper layer adopt conductive layers with p-type conductivity types.
In the technical scheme, when negative polarization charges are generated between the interface lower layer and the interface upper layer, the negative polarization charges form an electron barrier at the interface and have a depletion effect on the n-type layers at the two sides of the interface, so that the n-type layers at the two sides of the interface become depletion layers with high resistance, namely very low dark current is formed. When light absorption is generated on the upper layer or the lower layer of the interface due to illumination, photoproduction holes and electrons are separated and drift under the action of a polarization electric field, the photoproduction holes are accumulated on the interface, so that potential barrier is reduced, the widths of depletion regions on two sides of the interface are reduced, the depletion layers on two sides of the interface are recovered or partially recovered to a neutral n-type layer conducting channel, a current conduction effect is generated between an anode contact electrode and a cathode contact electrode, and the holes accumulated on the interface bring photoconduction gain, so that extremely high photocurrent, photoelectric gain and light-dark current ratio are obtained.
When positive polarization charges are generated between the interface lower layer and the interface upper layer, the positive polarization charges of the interface form a hole barrier at the interface, and a depletion effect is generated on the p-type layers on the two sides of the interface, so that the p-type layers on the two sides of the interface are changed into depletion layers with high resistance, and a very low dark current is formed. When light absorption is generated on the upper layer or the lower layer of the interface due to illumination, photoproduction holes and electrons are separated and drift under the action of a polarization electric field, photoproduction electrons are accumulated on the interface, so that a hole potential barrier is reduced, the widths of depletion regions on two sides are reduced, the depletion layers on two sides of the interface are recovered or partially recovered into a conductive neutral p-type layer, a current conduction effect is generated, and meanwhile, the electrons accumulated on the interface bring photoconduction gain, so that extremely high photocurrent, photoelectric gain and light-dark current ratio are obtained.
Further, when negative polarization charges are generated between the interface lower layer and the interface upper layer, the material of the interface upper layer and the interface lower layer may be Al of (0001) crystal plane x Ga 1-x N/Al y Ga 1-y N；In y Ga 1-y N/In x Ga 1-x N; InGaN/AlGaN or ZnO/GaN; wherein x is more than or equal to 0<y is less than or equal to 0. Wherein, [0001 ]]Is a coordinate axis in the crystal material and represents the direction of the crystal; the polarization effect of the (0001) surface in the wurtzite structure is selected to be strongest, and the effect is better.
Further, when positive polarization charges are generated between the interface lower layer and the interface upper layer, the material of the interface upper layer and the interface lower layer may be Al of (0001) crystal plane x Ga 1-x N/Al y Ga 1-y N；In y Ga 1-y N/In x Ga 1-x N; AlGaN/InGaN, or GaN/ZnO; wherein x is more than or equal to 0<y≤0。
Further, when negative polarization charges are generated between the interface lower layer and the interface upper layer, and the interface upper layer and the interface lower layer are group iii nitride materials, the anode contact electrode and the cathode contact electrode may employ a Ti/Al/Ni/Au metal stack.
Further, when positive polarization charges are generated between the interface lower layer and the interface upper layer, and the interface upper layer and the interface lower layer are heterojunction of group iii nitride materials, Ni/Au can be used for the anode contact electrode and the cathode contact electrode.
Further, if the anode contact electrode and the cathode contact electrode are simultaneously formed on the interface upper layer, the interface lower layer is preferably intrinsically conductive or lowly doped, wherein, when the interface lower layer is lowly doped, the doping concentration is less than 5 × 10 17 cm -3 。
In one embodiment, the total amount of ionized impurities in at least one of the upper and lower interfacial layers is less than the polarization charge amount of the heterojunction interface.
In one embodiment, the interface upper layer is divided into an interface upper absorption layer and an interface upper channel layer, and the interface lower layer is divided into an interface lower absorption layer and an interface lower channel layer;
the interface upper channel layer/the interface lower channel layer are an n-type conducting layer/a p-type conducting layer which have the same conducting type as that of the interface upper layer/the interface lower layer;
the conduction type of the interface upper absorption layer/the interface lower absorption layer is intrinsic type, or the conduction type of the interface upper layer/the interface lower layer is the same as that of the interface upper layer/the interface lower layer, and the carrier concentration of the interface upper channel layer/the interface lower channel layer is lower than that of the interface upper channel layer/the interface lower channel layer.
The anode contact electrode and the cathode contact electrode are simultaneously prepared on the interface upper layer or the interface lower layer, and form ohmic contact or contact potential barrier with the contacted interface upper layer or the contacted interface lower layer, wherein the ohmic contact or the contact potential barrier is less than 0.5 eV.
Wherein, the anode contact electrode and the cathode contact electrode are preferably in ohmic contact with the contacted n-type layer; when the anode contact electrode and the cathode contact electrode have a contact barrier with the n-type layer in contact, the height of the contact barrier is less than 0.5 eV.
In one embodiment, if the anode contact electrode and the cathode contact electrode are fabricated on the interface upper layer at the same time, the interface upper layer is divided into an interface upper absorption layer and an interface upper channel layer, wherein the interface upper absorption layer is preferably intrinsic conductive or low doped; wherein, when the absorption layer on the interface is low doped, the doping concentration is lower than 5 × 10 17 cm -3 。
When negative polarization charges are generated between the interface lower layer and the interface upper layer, the interface upper channel layer of the interface upper layer is preferably high in mobility and low in resistivity, and specifically can be a single-layer uniform donor-doped n-type layer, a polarization-doped n-type layer or a two-dimensional electron gas channel layer.
When the channel layer on the interface of the upper layer of the interface is a single-layer uniform donor doped n-type layer, Si doping can be adopted, and the doping concentration is higher than 1 multiplied by 10 17 cm -3 Less than 5×10 19 cm -3 Preferably, so as not to affect the recovery of the n-type conductivity of the channel layer or to reduce the mobility affecting the optical gain; when the two-dimensional electron gas channel layer is selected as the channel layer on the interface of the interface upper layer, a layer of III-group nitride material with smaller in-plane lattice constant can be prepared on the absorption layer on the interface of the (0001) crystal face, so that a two-dimensional electron gas conducting channel is formed between the absorption layer on the interface and the channel layer on the interface.
When positive polarization charges are generated between the interface lower layer and the interface upper layer, the interface upper channel layer of the interface upper layer is preferably high in mobility and low in resistivity, and specifically can be a single-layer uniform donor-doped p-type layer, a polarization-doped p-type layer or a two-dimensional hole gas channel layer.
When the channel layer on the interface of the upper layer of the interface is a single-layer uniform donor doped p-type layer, Mg doping can be adopted, and the doping concentration is higher than 1 multiplied by 10 17 cm -3 Less than 5X 10 19 cm -3 Preferably, so as not to affect the recovery of p-type conductivity of the channel layer or to reduce mobility affecting optical gain; when the channel layer on the interface of the interface upper layer is the two-dimensional hole gas channel layer, a layer of III-group nitride material with larger in-plane lattice constant can be prepared on the absorption layer on the interface of the (0001) crystal face, so that a two-dimensional hole gas conducting channel is formed between the absorption layer on the interface and the channel layer on the interface.
In another embodiment, when the anode contact electrode and the cathode contact electrode are simultaneously formed on the interface lower layer, the interface upper layer is preferably intrinsically conductive or lowly doped, wherein when the interface upper layer is lowly doped, the doping concentration is less than 5 × 10 17 cm -3 。
Further, if the anode contact electrode and the cathode contact electrode are simultaneously prepared on the interface lower layer, the interface lower layer is divided into an interface lower absorption layer and an interface lower channel layer; wherein, the absorption layer under the interface is preferably intrinsic conductivity or low doping; wherein, when the absorption layer under the interface is low doped, the doping concentration is lower than 5 × 10 17 cm -3 。
When negative polarization charges are generated between the interface lower layer and the interface upper layer, the interface lower channel layer of the interface lower layer is preferably high in mobility and low in resistivity, and can be a single-layer uniform donor-doped n-type layer, a polarization-doped n-type layer or a two-dimensional electron gas channel layer.
Further, when the n-type layer is doped with a single uniform donor in the channel layer under the interface, Si doping may be used with a doping concentration higher than 1 × 10 17 cm -3 Less than 5X 10 19 cm -3 Preferably so as not to affect the recovery of the n-type conductivity of the channel layer or to reduce mobility affecting optical gain. When the lower interface channel layer of the lower interface layer is a two-dimensional electron gas channel layer, a layer of III-group nitride material with larger in-plane lattice constant can be prepared under the lower interface absorption layer of the (0001) crystal face, so that a two-dimensional electron gas conducting channel is formed between the lower interface absorption layer and the lower interface channel layer.
When positive polarization charges are generated between the interface lower layer and the interface upper layer, the interface lower channel layer of the interface lower layer is preferably high in mobility and can be a single-layer uniform donor-doped p-type layer, a polarization-doped p-type layer or a two-dimensional hole gas channel layer.
Further, when the lower channel layer of the interface lower layer is a single-layer uniform donor doped p-type layer, Mg doping may be used, and the doping concentration is higher than 1 × 10 17 cm -3 Less than 5X 10 19 cm -3 Preferably, so as not to affect the recovery of p-type conductivity of the channel layer or to reduce mobility affecting optical gain. When the lower channel layer of the interface lower layer is a two-dimensional hole gas channel layer, a layer of III-group nitride material with smaller in-plane lattice constant can be prepared under the lower absorption layer of the interface of the (0001) crystal face, so that a two-dimensional hole gas conducting channel is formed between the lower absorption layer of the interface and the lower channel layer of the interface.
In one embodiment, the interfacial upper channel layer and/or lower channel layer is a two-dimensional electron/hole gas channel formed by a channel layer/absorber layer heterostructure, a low-dimensional conductive channel composed of a two-dimensional semiconductor material (e.g., graphene, a single layer MoS2, etc.).
Compared with the prior art, the invention has the beneficial effects that:
the method mainly utilizes the polarization charges generated by the heterojunction interfaces of the upper layer and the lower layer of the interface and the corresponding polarization electric field to exhaust the absorption layer and the channel layer, so that the channel layer obtains extremely low dark current under the condition of no illumination; under illumination, minority carriers are transported to a heterojunction interface under an electric field to be accumulated, the depletion effect of a polarization electric field is weakened, the channel layer restores conduction, and meanwhile charges accumulated on the interface can cause photoconductive gain, so that extremely high photocurrent gain and light-dark current ratio are generated.
For example, according to the technical scheme, aiming at the group III nitride semiconductor with the wurtzite structure, two-dimensional polarization charges are generated by utilizing the polarization effect of a heterogeneous interface, and depletion effects are generated on semiconductor layers above and below the interface through the polarization charges without extra doping and applied voltage, so that the preparation process of the device is simplified, and the response speed, stability and repeatability of the device are improved.
According to the technical scheme, the semiconductor interface layer is depleted through the polarization charges formed on the heterojunction interface and the corresponding polarization electric field, the strong polarization electric field can rapidly separate photo-generated electrons and holes, recombination is reduced, and the quantum efficiency of the detector is improved.
According to the technical scheme, the conductivity of the channel layer is regulated and controlled by binding photo-generated electrons or holes through self-formation of polarized charges on a heterojunction interface, and non-equilibrium carriers at the interface are inhibited due to recombination, so that a longer service life can be obtained, effective accumulation is formed, and a very remarkable regulation and control effect of the channel layer potential and the carrier concentration is achieved, so that extremely high internal gain and responsivity are obtained, and the detection of weak light is facilitated.
The technical scheme is that non-equilibrium carriers are accumulated by self-forming potential wells of a heterojunction interface, and the conductivity of a channel layer is regulated and controlled; the high responsivity is obtained, meanwhile, the linear response to the light intensity can be realized in a larger light intensity range, and the method is very beneficial to various detection applications needing to accurately identify the signal intensity.
According to the technical scheme, the service life of the unbalanced carriers can be controlled by regulating and controlling the barrier height of the interface, so that the reduction of response speed caused by overhigh service life of the carriers can be avoided, and the balance and selection between high responsivity and high response speed can be conveniently made.
The polarized semiconductor material adopted by the photoelectric detector of the invention not only comprises a wurtzite structure polarized semiconductor material represented by III group nitride, zinc oxide and the like, but also comprises a polarized semiconductor material with other polarization effects except spontaneous polarization and piezoelectric polarization and a composite structure of a polarized semiconductor and a two-dimensional material; the corresponding detection wave band can cover the optical wave band corresponding to the forbidden bandwidth of the polarized semiconductor body, and has the advantages of strong material applicability, large wavelength selection range, strong photoelectric gain, high detection sensitivity and wide application range.
Drawings
FIG. 1 is a structural view of embodiment 1 of the present invention.
Fig. 2 is a structural view of embodiment 2 of the present invention.
Fig. 3 is a structural view of embodiment 5 of the present invention.
Fig. 4 is a structural view of embodiment 6 of the present invention.
Fig. 5 is a structural view of embodiment 7 of the present invention.
Fig. 6 is a structural view of embodiment 9 of the present invention.
Fig. 7 is a structural view of embodiment 10 of the present invention.
Fig. 8 is a structural view of embodiment 11 of the present invention.
Fig. 9 is a structural view of embodiment 12 of the present invention.
Fig. 10 is a structural view of embodiment 13 of the present invention.
Fig. 11 is a result of a light dark current test performed on the device prepared in example 1 in example 14 of the present invention.
Fig. 12 shows the results of the optical dark current test performed on the device prepared in example 2 in example 14 of the present invention.
Detailed Description
The drawings are only for purposes of illustration and are not to be construed as limiting the invention. For a better understanding of the following embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
In order to clearly and easily illustrate the application of the inventive technique, the embodiment is mainly given by taking the wurtzite structure semiconductor with spontaneous and piezoelectric polarization effect as an example, which does not represent the polarized semiconductor material without other structures.
Example 1
As shown in fig. 1, the present embodiment discloses an AlGaN-based heterojunction photodetector, which mainly includes a substrate layer 101, an interface lower layer 102, an interface upper layer 103, an anode contact electrode 104, and a cathode contact electrode 105, which are sequentially arranged from bottom to top.
Wherein the material of the substrate layer 101 is a c-plane sapphire substrate;
the interface lower layer 102 is (0001) oriented AlN material grown on the sapphire substrate, and comprises a low-temperature AlN buffer layer and a high-temperature AlN layer prepared on the buffer layer, wherein the doping type is unintentional doping, and the thickness is 400 nm;
the upper interface layer 103 is an AlGaN material with Al component of 40%, and is doped n-type with Si as doping impurity with a doping concentration of 1 × 10 18 cm -3 The thickness is 110 nm;
the anode contact electrode 104 and the cathode contact electrode 105 are both a Ti/Al/Ni/Au metal stack with a thickness of 15/80/20/60 nm.
In this embodiment, since a large amount of negative polarization charges are generated at the (0001) oriented AlGaN/AlN interface, the energy band at the interface between the interface lower layer 102 and the interface upper layer 103 is significantly raised to form an electron barrier, and due to the presence of negative charges at the interface, electrons in both the AlN layer below the interface and the AlGaN layer above the interface are depleted by the negative charges at the interface, so that the conductivity of the upper n-AlGaN layer changes from n-type conductivity to a high-resistance state. So that the current between the anode contact electrode and the cathode contact electrode is small at this time, i.e., the detector dark current is low. Under the irradiation of solar blind ultraviolet light, electron hole pairs generated by light absorption in the AlGaN depletion layer are separated and drifted under a polarization electric field, photogenerated holes flow to the AlGaN/GaN interface to be accumulated, and photogenerated electrons flow to the surface direction of the AlGaN layer to restore the conductivity of the AlGaN near the surface. At this time, a high on current is generated between the anode contact electrode and the cathode contact electrode due to the recovery of conductivity of AlGaN, that is, a high responsivity and a high light-dark current ratio are generated.
Example 2
As shown in fig. 2, the AlGaN-based heterojunction photodetector of the present embodiment mainly includes a substrate layer 201, an interface lower layer 202, an interface upper layer, an anode contact electrode 204, and a cathode contact electrode 205, which are sequentially arranged from bottom to top.
The difference between this embodiment and embodiment 1 is that the interface upper layer of this embodiment is subdivided into an interface upper absorption layer 203-1 and an interface upper channel layer 203-2, where the interface upper absorption layer 203-1 is intentionally doped AlGaN with 40% Al composition and has a thickness of 60nm, the interface upper channel layer 203-2 is Si doped AlGaN with n-type 40% composition and has a doping concentration of 2 × 10 18 cm -3 And the thickness is 35 nm. An anode contact electrode and a cathode contact electrode are prepared on the channel layer 203-2 on the interface.
Example 3
This example is different from example 2 in that the Al composition of the absorption layer 203-1 on the interface and the channel layer 203-2 on the interface is 60% and the anode contact electrode and the cathode contact electrode use a V/Al/V/Au metal stack.
Example 4
The present embodiment is different from embodiment 2 in that the Si doping concentration of the channel layer 203-2 on the interface of the present embodiment is 1 × 10 18 cm -3 And the thickness is 70 nm.
Example 5
As shown in fig. 3, the AlGaN-based heterojunction photodetector of the present embodiment mainly includes a substrate layer 301, a lower interface channel layer 302-2, a lower interface absorption layer 302-1, an upper interface absorption layer 303-1, an upper interface channel layer 303-2, an anode contact electrode 304, and a cathode contact electrode 305, which are sequentially disposed from bottom to top.
The difference between this example and example 2 is that the interface underlayer of this example is divided into an interface underlayer 302-1 and an interface underlayer channel layer 302-1, and the anode contact electrode and the cathode contact electrode are both prepared at 302-2On the layer. The lower interface absorption layer 302-1 and the lower interface channel layer 302-2 both adopt 60% AlGaN, and the conductivity types are respectively unintentional doping and 2 x 10 18 cm -3 The thickness of the n-type doped layer is respectively 100nm and 30nm, and the anode contact electrode and the cathode contact electrode adopt V/Al/V/Au metal lamination.
Example 6
As shown in fig. 4, the AlGaN-based heterojunction photodetector of the present embodiment mainly includes a substrate layer 401, a lower interface channel layer 402-2, a lower interface absorption layer 402-1, an upper interface absorption layer 403-1, an upper interface channel layer 403-2, an anode contact electrode 404, and a cathode contact electrode 405, which are sequentially disposed from bottom to top.
Wherein, the substrate 401 of the present embodiment employs
The GaN material of the surface can be a GaN bulk substrate or prepared by other methods
An oriented GaN buffer layer;
the lower channel layer 402-2 and the lower absorption layer 402-1 are made of GaN material with n-type doping concentration of 1 × 10 18 cm -3 60nm thick, the latter is unintentionally doped and 200nm thick;
20 percent of AlGaN material is adopted for the absorption layer 403-1 on the interface and the channel layer 403-2 on the interface, and the doping types are respectively unintentional doping and 3 multiplied by 10 18 cm -3 The thickness of the n-type doping is 120nm and 30nm respectively;
the anode contact electrode 404 and the cathode contact electrode 405 are both a Ti/Al/Ni/Au metal stack, 15/80/20/60nm thick, and are both fabricated on the interface above the channel layer 403-2.
Specifically, in this embodiment, the GaN buffer layer is prepared by the (000-1) plane, and the AlGaN/GaN is only required to generate negative polarization charges, so that the structure is simpler.
Example 7
As shown in fig. 5, the AlGaN-based heterojunction photodetector of the present embodiment mainly includes a substrate layer 501, an interface lower layer 502, interface upper layers 503-1 and 503-2, an anode contact electrode 504, and a cathode contact electrode 505, which are sequentially arranged from bottom to top.
The difference between the present embodiment and embodiment 2 is that the interface upper layer of the present embodiment is subdivided into an interface upper absorption layer 503-1 and an interface upper channel layer 503-2, the upper absorption layer 503-1 of the present embodiment is AlGaN with a thickness of 80nm and an Al composition of 40%, and the doping type is unintentional doping; the channel layer 503-2 on the interface is AlGaN with a thickness of 25nm and an Al composition of 60%, and the doping type is unintentional doping.
In the embodiment, the direct interface between the absorption layer 503-1 on the interface and the channel layer 503-2 on the interface generates positive polarization charges and corresponding two-dimensional electron gas due to polarization effect, and the electron gas is depleted by the interface charges between the absorption layer 503-1 on the interface and the channel layer 503-2 on the interface under dark condition, so as to form very low dark current. The electron gas at the interface of the absorber layer 503-1 at the interface and the channel layer 503-2 at the interface will resume conduction when light is applied. Since the two-dimensional electron gas mobility of the interface is higher than that of the n-type doped AlGaN material, the detector of the present embodiment can obtain higher photocurrent and gain effects than those of embodiment 2.
In addition, in the embodiment, all materials do not involve impurity doping, and all interface potential barriers and conductivity are realized by regulating and controlling the polarization effect between the materials, so that the crystal defect caused by impurity doping is avoided, and the stability and the high-speed response characteristic of the detector are ensured.
Example 8
This embodiment is different from embodiment 7 in that the channel layer 503-2 on the interface is replaced with non-uniformly doped AlGaN whose composition is gradually changed, Al composition is gradually changed from 40% to 60% from bottom to top, and the corresponding thickness is 20 nm. The layer of the gradient component layer can realize the effect of polarization doping, namely the n-type conductive characteristic is obtained by regulating and controlling the gradient of the component instead of impurity doping.
Example 9
As shown in fig. 6, the AlGaN-based heterojunction photodetector of the present embodiment mainly includes a substrate layer 601, an interface lower layer 602, a graded composition layer 606, interface upper layers 603-1 and 603-2, an anode contact electrode 604, and a cathode contact electrode 605, which are sequentially disposed from bottom to top.
The difference between this embodiment and embodiment 2 is that the interface upper layer of this embodiment is subdivided into the interface upper absorption layer 603-1 and the interface upper channel layer 603-2, and a gradual change component layer 606 is disposed between the interface lower layer 602 and the interface upper absorption layer 603-1 of this embodiment, where the Al component gradually changes from 100% to 40% and the thickness is 15nm, and the function of this embodiment is to change the abrupt interface into gradual change through the gradual change component layer 606, thereby avoiding stress release of the abrupt interface and corresponding defects. Wherein, the stress release can lead to the problems of reduced quantity of polarization charges and deterioration and depletion; defects generated by the abrupt interface easily cause the problem of the degradation of the response speed of the detector, and the two problems are effectively inhibited by adding the gradual composition layer 606.
Example 10
As shown in fig. 7, the GaN-based heterojunction photodetector of this embodiment mainly includes, from bottom to top, a substrate layer 701, a lower interface channel layer 702-2, a lower interface absorption layer 702-1, an upper interface absorption layer 703-1, an upper interface channel layer 703-2, an anode contact electrode 704, and a cathode contact electrode 705.
The substrate 701 is made of (0001) oriented GaN material, and can be a GaN bulk substrate or a (0001) oriented GaN buffer layer prepared in other ways;
the lower channel layer 702-2 of the interface adopts AlGaN materials with gradually changed components, the Al component is gradually changed from 0 to 30 percent, and the thickness is 30 nm;
the absorption layer 702-1 under the interface adopts uniform AlGaN which is not intentionally doped, the Al component is 24%, and the thickness is 80 nm;
the absorption layer 703-1 on the interface adopts unintentionally doped GaN material, and the thickness is 35 nm;
the channel layer 703-2 on the interface is made of n-type doped GaN material with a doping concentration of 3 × 10 18 cm -3 And the thickness is 15 nm.
The anode contact electrode 704 and the cathode contact electrode 805 are both a Ti/Al/Ni/Au metal stack, 15/80/20/60nm thick, and are both fabricated on the interface above the channel layer 703-2.
Example 11
As shown in fig. 8, the InGaN-based heterojunction photodetector of this embodiment mainly includes a substrate layer 801, an interface lower layer 802, an interface upper layer 803, and an anode contact electrode 804 and a cathode contact electrode 805, which are sequentially disposed from bottom to top.
Wherein the substrate layer 801 is a (0001) oriented GaN single crystal or buffer layer;
the interface underlayer 802 is an unintentionally doped GaN material with a thickness of not less than 100nm and a background electron concentration of about 5 × 10 16 cm -3 ；
The interfacial upper layer 803 is an unintentionally doped InGaN material with a thickness of 120nm and a background electron concentration of about 3 × 10 17 cm -3 ；
The anode contact electrode 804 and the cathode contact electrode 805 are both a Ti/Al/Ni/Au metal stack, 15/80/20/60nm thick, and are both prepared on the interface overlayer 803.
Example 12
As shown in fig. 9, the ZnO/ZnMgO-based heterojunction photodetector of this embodiment mainly includes a substrate layer 901, an interface lower layer 902, an interface upper layer 903, an anode contact electrode 904, and a cathode contact electrode 905, which are sequentially disposed from bottom to top.
The substrate layer 901 is made of a c-plane sapphire substrate;
the interface lower layer 902 is a ZnMgO layer with 30% of Mg component grown on the sapphire substrate, and is formed by adopting unintentional doping and with the thickness of 500 nm;
the upper layer 903 of the interface is ZnO layer and is doped unintentionally and has electron concentration of 5 × 10 17 cm -3 The thickness is 50 nm;
the anode contact electrode 904 and the cathode contact electrode 905 are both a Ti/Au metal stack.
Example 13
As shown in fig. 10, this embodiment discloses a p-channel AlGaN-based photodetector, which includes a substrate layer 1001, a lower interface channel layer 1002-2, a lower interface absorber layer 1002-1, an upper interface absorber layer 1003-1, an upper interface channel layer 1003-2, and an anode contact electrode 1004 and a cathode contact electrode 1005 disposed on the upper interface channel layer 1003-2, in this order from bottom to top.
The substrate 1001 is made of (0001) plane GaN material, and may be a GaN bulk substrate or a (0001) plane GaN buffer layer prepared in other ways;
the lower channel layer 1002-2 and the lower absorbing layer 1002-1 are made of GaN material with p-type doping concentration of 1 × 10 18 cm -3 60nm thick, the latter is unintentionally doped and 200nm thick;
the absorption layer 1003-1 on the interface and the channel layer 1003-2 on the interface both adopt AlGaN materials with 20 percent of components, and the doping types are respectively unintentional doping and 2 multiplied by 10 18 cm -3 The thicknesses of the p-type doping of (1) are respectively 120nm and 45 nm;
the anode contact electrode 1004 and the cathode contact electrode 1005, both of which are Ni/Au and 20/60nm thick, are fabricated on the interface above the channel layer 1003-2.
Example 14
This example performs detector characterization on the photodetectors prepared in examples 1 and 2.
As shown in fig. 11, which is a result of the dark light current test of the device prepared in example 1, the device maintains a low current of-pA magnitude under dark conditions, which is mainly a beneficial effect caused by depletion of the n-type AlGaN layer on the interface due to the negative polarization charges at the interface of the AlGaN/GaN heterojunction; and under ultraviolet irradiation (optical power density 138 muW/cm) 2 ) Then, due to the surface conduction channel recovery and photoconductive gain effect of the interface hole accumulation, extremely high photocurrent response is formed, and the corresponding light-dark current ratio reaches 10 8 And the photoelectric gain at 20V is 1.3 multiplied by 10 5 . Therefore, the photodetector obtained in this embodiment 1 has the advantageous effect of high conductance gain.
As fig. 12 is a result of the optical dark current test of the device fabricated in example 2, since the currents of the positive voltage and the negative voltage are almost symmetrical in the current-voltage test of the device, the figure gives only the current of the positive voltage, and the form is identical to that of the right half of fig. 11. As can be seen from FIG. 12, the device also maintained a low current on the order of pA under dark conditions, while under ultraviolet illumination (optical power density 138. mu.W/cm) 2 ) Next, a higher light-to-dark current ratio (10) was obtained 9 ) And higher photoelectric gain (photoelectric gain of 3.7X 10 at 10V) 5 ). Therefore, the photodetector obtained in this embodiment 2 has the advantageous effect of high photoelectric gain.
Similarly, in the dark current tests of examples 3 to 13, the beneficial effects of high dark current ratio and high photoelectric gain were obtained, and are not described herein again.
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the technical solutions of the present invention, and are not intended to limit the specific embodiments of the present invention. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention claims should be included in the protection scope of the present invention claims.
Claims (8)
1. The heterojunction photoelectric detector is characterized by comprising a substrate and/or a buffer layer and a working device, wherein the working device comprises an interface lower layer and an interface upper layer which are sequentially arranged on the substrate and/or the buffer layer from bottom to top;
the interface lower layer and/or the interface upper layer are/is provided with an anode contact electrode and a cathode contact electrode;
the interface lower layer and the interface upper layer are of heterogeneous structures, and polarization charges are generated in the interface lower layer and the interface upper layer.
2. A heterojunction photodetector as claimed in claim 1, wherein said semiconductor component is of a poled semiconductor material.
3. A heterojunction photodetector according to claim 2, wherein said working device is fabricated on the polar or semi-polar face of said poled semiconductor material.
4. A heterojunction photodetector according to claim 1, wherein negative polarization charge or positive polarization charge is generated at the interface of said interface lower layer and said interface upper layer;
when negative polarization charges are generated at the interface of the interface lower layer and the interface upper layer, the interface lower layer and the interface upper layer adopt conducting layers with n-type conducting types;
when positive polarization charges are generated at the interface of the interface lower layer and the interface upper layer, the interface lower layer and the interface upper layer adopt conductive layers with p-type conductivity types.
5. A heterojunction photodetector as claimed in claim 1, wherein the total amount of ionized impurities in at least one of said upper and lower interfacial layers is less than the amount of polarization charge at said heterojunction interface.
6. A heterojunction photodetector according to claim 1, wherein said interface upper layer is divided into an interface upper absorption layer and an interface upper channel layer, and said interface lower layer is divided into an interface lower absorption layer and an interface lower channel layer;
the interface upper channel layer/the interface lower channel layer are an n-type conducting layer/a p-type conducting layer which have the same conducting type as that of the interface upper layer/the interface lower layer;
the conduction type of the interface upper absorption layer/the interface lower absorption layer is intrinsic type, or the conduction type of the interface upper layer/the interface lower layer is the same as that of the interface upper layer/the interface lower layer, and the concentration of current carriers is lower than that of the interface upper channel layer/the interface lower channel layer, namely weak n type/weak p type.
7. A heterojunction photodetector according to claim 1, wherein said anode contact electrode and said cathode contact electrode are formed on the interface upper layer or the interface lower layer at the same time, and form an ohmic contact or a contact barrier with the contacted interface upper layer or interface lower layer less than 0.5 eV.
8. A heterojunction photodetector as claimed in claim 6, wherein said channel layer on the interface and the upper absorbing layer are of a homogeneous or heterogeneous material comprising a two-dimensional semiconductor material; the interface lower channel layer and the lower absorbing layer are homogeneous or heterogeneous materials and comprise two-dimensional semiconductor materials.
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