CN115051681A - Low-clutter lithium niobate thin-film surface acoustic wave filter and preparation method thereof - Google Patents
Low-clutter lithium niobate thin-film surface acoustic wave filter and preparation method thereof Download PDFInfo
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- CN115051681A CN115051681A CN202210788708.2A CN202210788708A CN115051681A CN 115051681 A CN115051681 A CN 115051681A CN 202210788708 A CN202210788708 A CN 202210788708A CN 115051681 A CN115051681 A CN 115051681A
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- 239000010409 thin film Substances 0.000 title claims abstract description 85
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000003989 dielectric material Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 25
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000002131 composite material Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 6
- 230000004044 response Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention belongs to the technical field of filters, and particularly relates to a low-clutter lithium niobate thin film surface acoustic wave filter and a preparation method thereof; the method comprises the following steps: the device comprises a supporting substrate, a dielectric layer, a lithium niobate thin film and an interdigital transducer; the medium layer comprises a dielectric film layer and an embedded dielectric material, the embedded dielectric material is embedded in the lithium niobate film and is periodically distributed, the dielectric film layer is arranged between the support substrate and the lithium niobate film, and the dielectric film layer is adjacent to the embedded dielectric material; according to the invention, the dielectric material is embedded in the piezoelectric thin film layer, namely the dielectric thin film layer, so that clutter signals are inhibited, clutter interference of the passband of the broadband single crystal thin film surface acoustic wave filter is reduced, the flatness of the passband of the filter is improved, the integral performance of the single crystal thin film surface acoustic wave filter is improved, and the practicability is high.
Description
Technical Field
The invention belongs to the technical field of filters, and particularly relates to a low-clutter lithium niobate thin-film surface acoustic wave filter and a preparation method thereof.
Background
The surface acoustic wave filter is widely applied to the fields of mobile communication and the like. In recent years, due to the trend of high-speed and large-capacity development of communication technology, the demand of a communication system for a SAW filter with a large bandwidth and a low loss is sharply increased. With the progress of the preparation capability of the piezoelectric single crystal thin film device, the surface acoustic wave filter based on the silicon-based piezoelectric single crystal thin film is developed, and has better filtering performance compared with the traditional surface acoustic wave filter based on piezoelectric single crystal materials such as lithium niobate, lithium tantalate and the like.
The surface acoustic wave filter based on the silicon-based lithium niobate film is suitable for application with large bandwidth and low loss. However, the existing surface acoustic wave filter of the silicon-based lithium niobate thin film is easy to excite rayleigh clutter while exciting a main mode, so that the frequency response of the filter is influenced, the passband ripple of the filter is enlarged, the flatness of the passband of the filter is seriously deteriorated, and the existing surface acoustic wave filter cannot be accepted in practical use.
Therefore, a surface acoustic wave filter which can suppress clutter signals, reduce stray interference of the passband of the silicon-based lithium niobate thin film surface acoustic wave filter and improve the flatness of the passband of the filter is needed.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a low-clutter lithium niobate thin-film surface acoustic wave filter and a preparation method thereof, wherein the method comprises the following steps: a support substrate (11), a dielectric layer (12), a lithium niobate thin film (13) and an interdigital transducer (14); the dielectric layer (12) comprises a dielectric thin film layer (121) and embedded dielectric materials (122), the embedded dielectric materials (122) are embedded into the lithium niobate thin film (13) and are distributed periodically, the dielectric thin film layer (121) is arranged between the supporting substrate (11) and the lithium niobate thin film (13), and the dielectric thin film layer (121) is adjacent to the embedded dielectric materials (122).
Preferably, the pre-buried dielectric material (122) is located directly below a gap between two adjacent electrode fingers of the interdigital transducer (14).
Preferably, the ratio of the distribution period of the pre-buried dielectric material (122) to the distribution period of the electrode fingers of the interdigital transducer (14) is a positive integer multiple of 1.
Preferably, the ratio of the width of the pre-buried dielectric material (122) to the width of the gap between two adjacent electrode fingers of the interdigital transducer (14) is in a range of 0.8-2.
Preferably, the ratio of the height of the pre-buried dielectric material (122) to the height of the lithium niobate thin film (13) is in the range of 0.3-0.7.
Preferably, the material of the support substrate (11) is silicon or silicon carbide.
Preferably, the material of the dielectric layer (12) is one of silicon dioxide, aluminum nitride or silicon nitride.
A preparation method of a low-clutter lithium niobate thin-film surface acoustic wave filter, which is used for preparing the low-clutter lithium niobate thin-film surface acoustic wave filter as claimed in any one of claims 1 to 7, and comprises the following steps:
s1: obtaining a support substrate;
s2: manufacturing a dielectric film layer on a support substrate;
s3: obtaining a piezoelectric material;
s4: performing ion implantation on the piezoelectric material;
s5: coating photoresist on the surface of the piezoelectric material, carrying out exposure development, carrying out high-temperature curing on the photoresist after the exposure development, and then carrying out etching treatment to etch a groove;
s6: manufacturing a pre-buried dielectric material in the groove;
s7: bonding the dielectric film layer and the piezoelectric material to obtain a composite structure;
s8: peeling the composite structure to obtain a lithium niobate film on the uppermost layer of the composite structure;
s9: and manufacturing an interdigital transducer on the lithium niobate thin film to obtain the low-clutter lithium niobate thin film surface acoustic wave filter.
The invention has the beneficial effects that: according to the low-clutter lithium niobate thin film surface acoustic wave filter designed by the invention, the dielectric material is embedded in the piezoelectric thin film layer, namely the dielectric thin film layer, so that clutter signals are inhibited, clutter interference of the passband of the broadband single crystal thin film surface acoustic wave filter is reduced, the flatness of the passband of the filter is improved, the overall performance of the single crystal thin film surface acoustic wave filter is improved, and the practicability is high.
Drawings
FIG. 1 is a schematic structural diagram of a low-noise lithium niobate thin-film surface acoustic wave filter according to the present invention;
FIG. 2 is a flow chart of the process for manufacturing the low-clutter lithium niobate thin-film surface acoustic wave filter according to the present invention;
FIG. 3 is a graph of the resonator response of a comparative filter;
FIG. 4 is a graph of the filter response of a comparative filter;
FIG. 5 is a graph of the resonator response of a preferred embodiment of the present invention;
FIG. 6 is a graph of the filter response of a preferred embodiment of the present invention;
FIG. 7 is a graph of resonator response for different embedded silicon dioxide dielectric material depths in accordance with a preferred embodiment of the present invention;
FIG. 8 is a graph of resonator response for different widths of embedded silicon dioxide dielectric material in accordance with a preferred embodiment of the present invention;
in the figure: 11. a support substrate; 12. a dielectric layer; 121. a dielectric thin film layer; 122. pre-burying a dielectric material; 13. a lithium niobate thin film; 14. an interdigital transducer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a low-clutter lithium niobate thin film surface acoustic wave filter, as shown in figure 1, the filter comprises:
a support substrate 11, a dielectric layer 12, a lithium niobate thin film 13 and an interdigital transducer 14; the dielectric layer 12 comprises a dielectric thin film layer 121 and an embedded dielectric material 122, the embedded dielectric material 122 is embedded in the lithium niobate thin film 13 and is distributed periodically, the dielectric thin film layer 121 is arranged between the support substrate 11 and the lithium niobate thin film 13, and the dielectric thin film layer 121 is adjacent to the embedded dielectric material 122.
The pre-buried dielectric material 122 is located directly below the gap between two adjacent electrode fingers of the interdigital transducer 14,
the ratio of the distribution period λ 2 of the pre-buried dielectric material 122 to the electrode finger distribution period λ 1 of the interdigital transducer 14
Is a positive integer multiple of 1.
Through the setting of the pre-buried dielectric material, the effect of restraining Rayleigh waves can be improved.
The ratio of the width W2 of the pre-buried dielectric material 122 to the width W1 of the gap between two adjacent electrode fingers of the interdigital transducer 14
The range of (1) is 0.8-2; in the present invention, in the case of the present invention,
less than 0.8 reduces the effect of suppressing Rayleigh waves, and more than 2 increases the filter loss and reduces the bandwidth, and thus
The optimal value range of (A) is 0.8-2.
The ratio of the height h1 of the embedded dielectric material 122 to the height h2 of the lithium niobate thin film 13
The range of (A) is 0.3 to 0.7; in the present invention, it is preferable that,
less than 0.3 reduces the effect of suppressing Rayleigh waves, and more than 0.7 increases the filter loss and reduces the bandwidth, and thus
The optimal value range of (A) is 0.3-0.7.
Preferably, the material of the support substrate 11 is silicon or silicon carbide.
Preferably, the material of the dielectric layer 12 is one of silicon dioxide, aluminum nitride or silicon nitride.
A preparation method of a low-clutter lithium niobate thin-film surface acoustic wave filter is used for preparing the low-clutter lithium niobate thin-film surface acoustic wave filter, and as shown in figure 2, the method comprises the following steps:
s1: obtaining a support substrate;
manufacturing a supporting substrate by adopting silicon or silicon carbide;
s2: manufacturing a dielectric film layer on a support substrate;
manufacturing a dielectric film layer on a supporting substrate by adopting one material of silicon dioxide, aluminum nitride and silicon nitride;
s3: obtaining a piezoelectric material;
the piezoelectric material is lithium niobate;
s4: performing ion implantation on the piezoelectric material;
he or H ions are injected into the piezoelectric material, and in the actual injection process, the He or H ions need to gradually penetrate downwards from the upper surface of the crystal;
s5: coating photoresist on the surface of the piezoelectric material, carrying out exposure development, carrying out high-temperature curing on the photoresist after the exposure development, and then carrying out etching treatment to etch a groove;
s5: manufacturing a pre-buried dielectric material in the groove;
manufacturing a pre-buried dielectric material in the groove by adopting one of silicon dioxide, aluminum nitride and silicon nitride;
s6: bonding the dielectric film layer and the piezoelectric material to obtain a composite structure;
the piezoelectric material after ion implantation is turned over by 180 degrees and is bonded to the dielectric film layer, namely, the dielectric film layer and the surface of the piezoelectric material are attached and extruded to obtain a composite structure;
s7: peeling off the composite structure to obtain a lithium niobate film on the uppermost layer of the composite structure; after the surfaces of the dielectric thin film layer and the piezoelectric material are attached, firstly, the surfaces are maintained for a certain time at a specific temperature, the interface bonding force is enhanced, simultaneously, the injected ionic layer is bubbled, the ionic layer and the non-ionic layer are gradually separated, finally, the ionic layer and the non-ionic layer are peeled off by mechanical equipment, then, the temperature is gradually reduced to the room temperature, the whole annealing and peeling process is completed, and the lithium niobate thin film is obtained on the uppermost layer of the composite structure.
S8: and manufacturing an interdigital transducer on the lithium niobate thin film to obtain the low-clutter lithium niobate thin film surface acoustic wave filter.
In some embodiments, the low-clutter lithium niobate thin-film surface acoustic wave filter disclosed by the invention is characterized in that a supporting substrate is made of silicon, a dielectric thin-film layer is made of silicon dioxide, the thickness of the dielectric thin-film layer is 500mm, a lithium niobate thin-film is arranged above the dielectric thin-film layer and has a thickness of 700nm, an embedded dielectric material is arranged in the lithium niobate thin-film, the embedded dielectric material is made of silicon dioxide, the ratio of the height of the embedded dielectric material to the height of the lithium niobate thin-film is 0.4, the ratio of the distribution period of the embedded dielectric material to the electrode finger distribution period of an interdigital transducer is 2, and the ratio of the width of the embedded dielectric material to the width of a gap between two adjacent electrode fingers of the interdigital transducer is 1.2.
The invention is evaluated, a contrast filter is arranged, the contrast filter is a common monocrystal thin film surface acoustic wave filter, a supporting substrate is made of silicon, a dielectric thin film layer is made of silicon dioxide, the thickness of the dielectric thin film layer is 500mm, a lithium niobate thin film is arranged above the dielectric thin film layer, and the thickness of the lithium niobate thin film is 700 nm.
As shown in fig. 3, the resonance point frequency of the contrast filter is 1332MHz, the anti-resonance point frequency is 1552MHz, and an obvious clutter exists between the resonance point and the anti-resonance point, where the clutter is a rayleigh wave. As shown in fig. 4, where graph (a) is an overall graph of the contrast filter response and graph (b) is a detailed graph of the contrast filter response; as can be seen from fig. 4, the ripple amplitude is from 2dB to 10dB, which severely affects the passband performance of the filter, compared to 4 significant ripples in the passband of the filter. As shown in fig. 5, in the preferred embodiment of the present invention, the resonance point frequency is 1314MHz, the anti-resonance point frequency is 1528MHz, and there is no rayleigh clutter between the resonance point and the anti-resonance point. FIG. 6 is a graph showing an overall filter response of an embodiment of the present invention, and a detailed filter response of an embodiment of the present invention; as can be seen from fig. 6, in the preferred embodiment of the present invention, the passband of the filter is smoothed, and the rayleigh clutter is significantly suppressed, and the structure of the preferred embodiment of the present invention effectively improves the passband performance of the filter. As shown in fig. 7, in the preferred embodiment of the present invention, the rayleigh amplitude gradually decreases as the depth of the embedded silicon dioxide dielectric material increases. When the ratio of the depth of the pre-buried silicon dioxide dielectric material to the thickness of the lithium niobate thin film is 0.3-0.7, Rayleigh waves are completely inhibited. As shown in fig. 8, in the preferred embodiment of the present invention, the rayleigh amplitude gradually decreases as the width of the pre-buried silicon dioxide dielectric material increases. When the ratio of the width w2 of the pre-buried silicon dioxide dielectric material to the gap width w1 of two adjacent electrode fingers of the interdigital transducer is in the range of 0.8-2, Rayleigh waves are completely inhibited.
In summary, the low-clutter lithium niobate thin film surface acoustic wave filter designed by the invention has the advantages that the dielectric material is embedded in the piezoelectric thin film layer, namely the dielectric thin film layer, so that clutter signals are inhibited, clutter interference of the passband of the broadband single crystal thin film surface acoustic wave filter is reduced, the flatness of the passband of the filter is improved, the integral performance of the single crystal thin film surface acoustic wave filter is improved, and the practicability is high.
The above-mentioned embodiments, which further illustrate the objects, technical solutions and advantages of the present invention, should be understood that the above-mentioned embodiments are only preferred embodiments of the present invention, and should not be construed as limiting the present invention, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A low clutter lithium niobate thin film surface acoustic wave filter, comprising: a support substrate (11), a dielectric layer (12), a lithium niobate thin film (13) and an interdigital transducer (14); the dielectric layer (12) comprises a dielectric thin film layer (121) and embedded dielectric materials (122), the embedded dielectric materials (122) are embedded into the lithium niobate thin film (13) and are distributed periodically, the dielectric thin film layer (121) is arranged between the supporting substrate (11) and the lithium niobate thin film (13), and the dielectric thin film layer (121) is adjacent to the embedded dielectric materials (122).
2. The low-noise lithium niobate thin-film surface acoustic wave filter according to claim 1, wherein the pre-buried dielectric material (122) is located right below a gap between two adjacent electrode fingers of the interdigital transducer (14).
3. The low-noise lithium niobate thin-film surface acoustic wave filter according to claim 1, wherein a ratio of a distribution period of the pre-buried dielectric material (122) to a distribution period of electrode fingers of the interdigital transducer (14) is a positive integer multiple of 1.
4. The low-noise lithium niobate thin-film surface acoustic wave filter according to claim 1, wherein a ratio of a width of the pre-buried dielectric material (122) to a width of a gap between two adjacent electrode fingers of the interdigital transducer (14) is in a range of 0.8 to 2.
5. The low-noise lithium niobate thin-film surface acoustic wave filter according to claim 1, wherein a ratio of a height of the pre-buried dielectric material (122) to a height of the lithium niobate thin film (13) is in a range of 0.3 to 0.7.
6. The low-noise lithium niobate thin-film surface acoustic wave filter according to claim 1, wherein the material of the supporting substrate (11) is silicon or silicon carbide.
7. The low-noise lithium niobate thin-film surface acoustic wave filter according to claim 1, wherein the material of the dielectric layer (12) is one of silicon dioxide, aluminum nitride or silicon nitride.
8. A preparation method of a low-clutter lithium niobate thin-film surface acoustic wave filter, which is used for preparing the low-clutter lithium niobate thin-film surface acoustic wave filter of any one of claims 1 to 7, and comprises the following steps:
s1: obtaining a support substrate;
s2: manufacturing a dielectric film layer on a support substrate;
s3: obtaining a piezoelectric material;
s4: performing ion implantation on the piezoelectric material;
s5: coating photoresist on the surface of the piezoelectric material, carrying out exposure development, carrying out high-temperature curing on the photoresist after the exposure development, and then carrying out etching treatment to etch a groove;
s6: manufacturing a pre-buried dielectric material in the groove;
s7: bonding the dielectric film layer and the piezoelectric material to obtain a composite structure;
s8: peeling off the composite structure to obtain a lithium niobate film on the uppermost layer of the composite structure;
s9: and manufacturing an interdigital transducer on the lithium niobate thin film to obtain the low-clutter lithium niobate thin film surface acoustic wave filter.
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|---|---|---|---|---|
| JP2010258555A (en) * | 2009-04-22 | 2010-11-11 | Murata Mfg Co Ltd | Method for manufacturing elastic boundary wave device |
| JP2010268429A (en) * | 2009-04-14 | 2010-11-25 | Murata Mfg Co Ltd | Elastic boundary wave device |
| CN110601674A (en) * | 2019-09-27 | 2019-12-20 | 中国科学院上海微系统与信息技术研究所 | High-frequency acoustic wave resonator and preparation method thereof |
| CN113794458A (en) * | 2021-09-16 | 2021-12-14 | 无锡市好达电子股份有限公司 | Surface acoustic wave device with composite film layer |
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- 2022-07-06 CN CN202210788708.2A patent/CN115051681A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010268429A (en) * | 2009-04-14 | 2010-11-25 | Murata Mfg Co Ltd | Elastic boundary wave device |
| JP2010258555A (en) * | 2009-04-22 | 2010-11-11 | Murata Mfg Co Ltd | Method for manufacturing elastic boundary wave device |
| CN110601674A (en) * | 2019-09-27 | 2019-12-20 | 中国科学院上海微系统与信息技术研究所 | High-frequency acoustic wave resonator and preparation method thereof |
| CN113794458A (en) * | 2021-09-16 | 2021-12-14 | 无锡市好达电子股份有限公司 | Surface acoustic wave device with composite film layer |
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Application publication date: 20220913 |