CN115036282B - High-resistance bonding silver wire and its preparation method and application - Google Patents

High-resistance bonding silver wire and its preparation method and application

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Publication number
CN115036282B
CN115036282B CN202210709144.9A CN202210709144A CN115036282B CN 115036282 B CN115036282 B CN 115036282B CN 202210709144 A CN202210709144 A CN 202210709144A CN 115036282 B CN115036282 B CN 115036282B
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silver
wire
resistance
cerium
nickel
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CN115036282A (en
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周钢
范传勇
张知行
郑华贵
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Shanghang Zijin Jiabo Electronic New Material Technology Co ltd
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Shanghang Zijin Jiabo Electronic New Material Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/016—Manufacture or treatment of strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Wire Bonding (AREA)

Abstract

The application is suitable for the technical field of bonding wires, and provides a high-resistance bonding silver wire and a preparation method and application thereof, wherein the high-resistance bonding silver wire comprises the following components, by weight, 1-5% of palladium, 0.001-0.01% of nickel, 0.0003-0.005% of cerium, 0.0005-0.005% of calcium, 0.0002-0.005% of aluminum, 0.1-0.3% of chromium, 0.5-3% of tin, and the balance of silver and unavoidable impurities, wherein the silver is not less than 91.5%. According to the application, the silver-based material is used as a main material, and nickel, cerium, calcium, aluminum, chromium and tin elements are doped according to a specific proportion to form a multi-element solid-melt structure, so that a synergistic promotion effect is generated among the elements in the structure, the mechanical property, the processing property and the chemical stability of the bonded silver wire are greatly improved, the addition of gold elements which are not separated from the traditional bonded wire for improving the performances in all aspects is abandoned, and the cost is greatly reduced.

Description

High-resistance bonding silver wire and preparation method and application thereof
Technical Field
The invention belongs to the technical field of bonding wires, and particularly relates to a high-resistance bonding silver wire as well as a preparation method and application thereof.
Background
Bond wires for semiconductor packaging are one of the basic materials in the packaging industry, which determines the development level of integrated circuits, and in recent years, due to the advanced development of integrated circuit technology, the demands for integration of integrated circuits are increasing, and the demands for chemical properties and mechanical properties of bond wire materials are also increasing.
In addition, since the bonding alloy wire is expensive, and in order to reduce the volume of the circuit board, it is necessary to study the high-resistance bonding silver wire, which aims to replace the resistance element on the circuit board and reduce the volume of the circuit board. Bonding silver wires have been widely used in LED packaging and IC packaging applications to reduce cost. However, the development of bonded silver wires has tended to be limited, and it is difficult to obtain excellent chemical stability and mechanical properties while ensuring high resistance due to the irrational nature of doping elements.
Disclosure of Invention
The embodiment of the invention provides a high-resistance bonding silver wire, which aims to solve the problems that the development of the existing bonding silver wire is limited by irrational doping elements, and excellent chemical stability and mechanical property are difficult to obtain while the high resistance is ensured.
The embodiment of the invention is realized in such a way that the bonding silver wire with high resistance comprises the following components in percentage by weight:
1 to 5 percent of palladium, 0.001 to 0.01 percent of nickel, 0.0003 to 0.005 percent of cerium, 0.0005 to 0.005 percent of calcium, 0.0002 to 0.005 percent of aluminum, 0.1 to 0.3 percent of chromium, 0.5 to 3 percent of tin, and the balance of silver and unavoidable impurities, wherein the silver is not less than 91.5 percent.
The embodiment of the invention also provides a preparation method of the high-resistance bonding silver wire, which comprises the following steps:
Uniformly mixing palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver, and then carrying out vacuum smelting treatment to obtain alloy melt;
the alloy melt is continuously fed into a crystallizer in a slow continuous casting mode of a guide rod, and is solidified to form continuous grains in the crystallizer, so that a silver alloy as-cast long-axis crystal bus is obtained;
Carrying out wiredrawing treatment on the silver alloy as-cast long-axis crystal bus, and preserving heat for 20-30min at 400-420 ℃ to obtain a silver alloy wire;
and annealing the silver alloy wire to obtain the high-resistance bonding silver wire.
The embodiment of the invention also provides application of the high-resistance bonding silver wire in the technical field of integrated circuit packaging.
According to the high-resistance bonding silver wire provided by the embodiment of the application, the doping element types of the silver-based material and the proportion of each doping element are determined through a large number of researches, the silver-based material is mainly doped with nickel, cerium, calcium, aluminum, chromium and tin elements according to a specific proportion to form a multi-element solid-melt structure, so that the synergistic promotion effect among the elements in the structure is facilitated, the mechanical property, the processing property and the chemical stability of the bonding silver wire are greatly improved, the traditional bonding wire is abandoned, the addition of gold elements is avoided for improving the properties in all aspects, the cost is greatly reduced, and meanwhile, the bonding silver wire obtained by the method has high resistance and the mechanical property and the chemical stability are superior to those of bonding gold wires with the same specification through verification.
Detailed Description
The present invention will be described in further detail with reference to specific embodiments in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The embodiment of the application provides the bonding silver wire with high resistance, aiming at solving the problems that the development of the existing bonding silver wire is limited by irrational property of doping elements, and is difficult to ensure high resistance and obtain excellent chemical stability and mechanical property, the doping element types of silver-based materials and the proportion of each doping element are determined through a great deal of researches, the silver-based materials are used as the main materials, nickel, cerium, calcium, aluminum, chromium and tin elements are doped according to a specific proportion to form a diversified solid-melt structure, the method is favorable for generating synergistic promotion effect among elements in the structure, thereby greatly improving the mechanical property, the processing property and the chemical stability of the bonding silver wire, discarding the addition of gold elements which are not needed for improving the properties of the traditional bonding wire, greatly reducing the cost, and meanwhile, the bonding silver wire obtained by the method has high resistance, and the mechanical property and the chemical stability are superior to those of bonding gold wires with the same specification.
Specifically, the high-resistance bonding silver wire comprises the following components in percentage by weight:
1 to 5 percent of palladium, 0.001 to 0.01 percent of nickel, 0.0003 to 0.005 percent of cerium, 0.0005 to 0.005 percent of calcium, 0.0002 to 0.005 percent of aluminum, 0.1 to 0.3 percent of chromium, 0.5 to 3 percent of tin, and the balance of silver and unavoidable impurities, wherein the silver is not less than 91.5 percent.
In a preferred embodiment of the application, the high resistance bonded silver wire comprises the following components in weight percent:
2-4% of palladium, 0.003-0.007% of nickel, 0.0015-0.0035% of cerium, 0.0015-0.0035% of calcium, 0.0025-0.0035% of aluminum, 0.15-0.25% of chromium, 1.5-2.5% of tin, and the balance of silver and unavoidable impurities, wherein the silver is not less than 91.5%.
In another preferred embodiment of the present application, the high resistance bonded silver wire comprises the following components in weight percent:
3% of palladium, 0.005% of nickel, 0.0025% of cerium, 0.0025% of calcium, 0.003% of aluminum, 0.2% of chromium, 2% of tin, and the balance of silver and unavoidable impurities, wherein the silver is not less than 91.5%.
In the early development process, the doping element types and the proportions of the doping elements of the silver-based material are determined through a large number of researches, and the multi-element compound addition is mainly used for improving the mechanical property, the processing property and the chemical stability of the bonded silver wire, but the element types and the proportions directly influence the properties of the bonded silver wire in all aspects.
The embodiment of the invention also provides a preparation method of the high-resistance bonding silver wire, which comprises the following steps:
Uniformly mixing palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver, and then carrying out vacuum smelting treatment to obtain alloy melt;
the alloy melt is continuously fed into a crystallizer in a slow continuous casting mode of a guide rod, and is solidified to form continuous grains in the crystallizer, so that a silver alloy as-cast long-axis crystal bus is obtained;
Carrying out wiredrawing treatment on the silver alloy as-cast long-axis crystal bus, and preserving heat for 20-30min at 400-420 ℃ to obtain a silver alloy wire;
and annealing the silver alloy wire to obtain the high-resistance bonding silver wire.
Wherein the vacuum smelting treatment condition is that the vacuum degree is 10 -5 Pa and the temperature is 1250-1300 ℃.
Wherein, the continuous casting mode is that the speed is controlled to be 30-35mm/min, and the cooling water temperature is controlled to be 20-30 ℃.
Wherein the annealing treatment condition is that the temperature is 500-550 ℃.
In addition, the parameters of the bonding silver wire are optimized and adjusted on the basis of the existing bonding silver wire preparation process, the specific process means can refer to the prior art, for example, the conventional wire drawing equipment is adopted for wire drawing in wire drawing treatment, and particularly, the method is favorable for forming continuous grains in a crystallizer by optimizing and adjusting the process parameter conditions of vacuum smelting treatment and continuous casting, so that long-axis crystals are obtained, the process parameter conditions of the vacuum smelting treatment and the continuous casting need to be strictly controlled, otherwise, the internal structure of an as-cast long-axis crystal bus of the silver alloy is influenced, the performances of the bonding silver wire obtained in the subsequent preparation are insufficient, the continuous casting speed is not suitable to be higher than 35mm/min, and the performances of the obtained bonding silver wire are obviously reduced when the smelting temperature is initially selected within the range of 1100-1200 ℃.
The application also provides application of the high-resistance bonding silver wire in the technical field of integrated circuit packaging.
The technical solutions of the embodiments of the present application will be clearly and completely described below in connection with the high-resistance bonding silver wire of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments.
In addition, it should be noted that the numerical values set forth in the following examples are as precise as possible, but those skilled in the art will understand that each numerical value should be construed as a divisor rather than an absolute precise numerical value due to measurement errors and experimental operation problems that cannot be avoided.
Example 1
In this embodiment, the bonded silver wire comprises the following components in weight percent:
palladium 1%, nickel 0.001%, cerium 0.0003%, calcium 0.0005%, aluminum 0.0002%, chromium 0.1%, tin 0.5%, silver 98.2%, the balance being unavoidable impurities.
Uniformly mixing palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver, and then carrying out vacuum smelting treatment to obtain alloy melt, wherein the vacuum smelting treatment condition is that the vacuum degree is 10 -5 Pa and the temperature is 1250 ℃. The continuous casting method is characterized in that the continuous casting method is that the speed is controlled to be 30mm/min, and the cooling water temperature is controlled to be 25 ℃. And carrying out wire drawing treatment on the silver alloy as-cast long-axis crystal bus, and preserving heat at the temperature of 410 ℃ for 25min to obtain a silver alloy wire, and carrying out annealing treatment on the silver alloy wire to obtain the high-resistance bonded silver wire, wherein the annealing treatment condition is that the temperature is 500 ℃.
Example 2
In this embodiment, the bonded silver wire comprises the following components in weight percent:
Palladium 2%, nickel 0.003%, cerium 0.0015%, calcium 0.0015%, aluminum 0.0025%, chromium 0.15%, tin 1.5%, silver 96.3%, and the balance unavoidable impurities.
Uniformly mixing palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver, and then carrying out vacuum smelting treatment to obtain alloy melt, wherein the vacuum smelting treatment condition is that the vacuum degree is 10 -5 Pa and the temperature is 1250 ℃. The continuous casting method is characterized in that the continuous casting method is that the speed is controlled to be 30mm/min, and the cooling water temperature is controlled to be 25 ℃. And carrying out wire drawing treatment on the silver alloy as-cast long-axis crystal bus, and preserving heat at the temperature of 410 ℃ for 25min to obtain a silver alloy wire, and carrying out annealing treatment on the silver alloy wire to obtain the high-resistance bonded silver wire, wherein the annealing treatment condition is that the temperature is 500 ℃.
Example 3
In this embodiment, the bonded silver wire comprises the following components in weight percent:
3% of palladium, 0.005% of nickel, 0.0025% of cerium, 0.0025% of calcium, 0.003% of aluminum, 0.2% of chromium, 2% of tin, 94.7% of silver and the balance of unavoidable impurities.
Uniformly mixing palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver, and then carrying out vacuum smelting treatment to obtain alloy melt, wherein the vacuum smelting treatment condition is that the vacuum degree is 10 -5 Pa and the temperature is 1250 ℃. The continuous casting method is characterized in that the continuous casting method is that the speed is controlled to be 30mm/min, and the cooling water temperature is controlled to be 25 ℃. And carrying out wire drawing treatment on the silver alloy as-cast long-axis crystal bus, and preserving heat at the temperature of 410 ℃ for 25min to obtain a silver alloy wire, and carrying out annealing treatment on the silver alloy wire to obtain the high-resistance bonded silver wire, wherein the annealing treatment condition is that the temperature is 500 ℃.
Example 4
In this embodiment, the bonded silver wire comprises the following components in weight percent:
4% of palladium, 0.007% of nickel, 0.0035% of cerium, 0.0035% of calcium, 0.0035% of aluminum, 0.25% of chromium, 2.5% of tin, 93.2% of silver and the balance of unavoidable impurities.
Uniformly mixing palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver, and then carrying out vacuum smelting treatment to obtain alloy melt, wherein the vacuum smelting treatment condition is that the vacuum degree is 10 -5 Pa and the temperature is 1250 ℃. The continuous casting method is characterized in that the continuous casting method is that the speed is controlled to be 30mm/min, and the cooling water temperature is controlled to be 25 ℃. And carrying out wire drawing treatment on the silver alloy as-cast long-axis crystal bus, and preserving heat at the temperature of 410 ℃ for 25min to obtain a silver alloy wire, and carrying out annealing treatment on the silver alloy wire to obtain the high-resistance bonded silver wire, wherein the annealing treatment condition is that the temperature is 500 ℃.
Example 5
In this embodiment, the bonded silver wire comprises the following components in weight percent:
Palladium 5%, nickel 0.01%, cerium 0.005%, calcium 0.005%, aluminum 0.005%, chromium 0.3%, tin 3%, silver 91.6%, and the balance unavoidable impurities.
Uniformly mixing palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver, and then carrying out vacuum smelting treatment to obtain alloy melt, wherein the vacuum smelting treatment condition is that the vacuum degree is 10 -5 Pa and the temperature is 1250 ℃. The continuous casting method is characterized in that the continuous casting method is that the speed is controlled to be 30mm/min, and the cooling water temperature is controlled to be 25 ℃. And carrying out wire drawing treatment on the silver alloy as-cast long-axis crystal bus, and preserving heat at the temperature of 410 ℃ for 25min to obtain a silver alloy wire, and carrying out annealing treatment on the silver alloy wire to obtain the high-resistance bonded silver wire, wherein the annealing treatment condition is that the temperature is 500 ℃.
The wire gauge of the bonded silver wires prepared in examples 1 to 5 was phi 0.02mm and the wire arc length was 2mm, and each bonded silver wire sample was tested for resistivity, bonding thrust, and mechanical properties (tensile strength, elongation), and the test results are shown in table 1.
TABLE 1
In addition, the present application was studied for doping elements and related process optimization during the early development, see in particular comparative examples 1-5 below.
Comparative example 1
In this comparative example, the bonded silver wire comprises the following components in weight percent:
3% of palladium, 0.005% of nickel, 0.0025% of cerium, 0.0025% of calcium, 0.003% of aluminum, 2% of tin, 94.9% of silver and the balance of unavoidable impurities.
Uniformly mixing palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver, and then carrying out vacuum smelting treatment to obtain alloy melt, wherein the vacuum smelting treatment condition is that the vacuum degree is 10 -5 Pa and the temperature is 1250 ℃. The continuous casting method is characterized in that the continuous casting method is that the speed is controlled to be 30mm/min, and the cooling water temperature is controlled to be 25 ℃. And carrying out wire drawing treatment on the silver alloy as-cast long-axis crystal bus, and preserving heat at the temperature of 410 ℃ for 25min to obtain a silver alloy wire, and carrying out annealing treatment on the silver alloy wire to obtain the high-resistance bonded silver wire, wherein the annealing treatment condition is that the temperature is 500 ℃.
Comparative example 2
In this comparative example, the bonded silver wire comprises the following components in weight percent:
3% of palladium, 0.005% of nickel, 0.0025% of cerium, 0.0025% of calcium, 0.003% of aluminum, 0.4% of chromium, 2% of tin, 94.5% of silver and the balance of unavoidable impurities.
Uniformly mixing palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver, and then carrying out vacuum smelting treatment to obtain alloy melt, wherein the vacuum smelting treatment condition is that the vacuum degree is 10 -5 Pa and the temperature is 1250 ℃. The continuous casting method is characterized in that the continuous casting method is that the speed is controlled to be 30mm/min, and the cooling water temperature is controlled to be 25 ℃. And carrying out wire drawing treatment on the silver alloy as-cast long-axis crystal bus, and preserving heat at the temperature of 410 ℃ for 25min to obtain a silver alloy wire, and carrying out annealing treatment on the silver alloy wire to obtain the high-resistance bonded silver wire, wherein the annealing treatment condition is that the temperature is 500 ℃.
Comparative example 3
In this comparative example, the bonded silver wire comprises the following components in weight percent:
3% of palladium, 0.015% of nickel, 0.0025% of cerium, 0.0025% of calcium, 0.003% of aluminum, 0.2% of chromium, 2% of tin, 94.69% of silver and the balance of unavoidable impurities.
Uniformly mixing palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver, and then carrying out vacuum smelting treatment to obtain alloy melt, wherein the vacuum smelting treatment condition is that the vacuum degree is 10 -5 Pa and the temperature is 1250 ℃. The continuous casting method is characterized in that the continuous casting method is that the speed is controlled to be 30mm/min, and the cooling water temperature is controlled to be 25 ℃. And carrying out wire drawing treatment on the silver alloy as-cast long-axis crystal bus, and preserving heat at the temperature of 410 ℃ for 25min to obtain a silver alloy wire, and carrying out annealing treatment on the silver alloy wire to obtain the high-resistance bonded silver wire, wherein the annealing treatment condition is that the temperature is 500 ℃.
Comparative example 4
In this embodiment, the bonded silver wire comprises the following components in weight percent:
3% of palladium, 0.005% of nickel, 0.0025% of cerium, 0.0025% of calcium, 0.003% of aluminum, 0.2% of chromium, 2% of tin, 94.7% of silver and the balance of unavoidable impurities.
And uniformly mixing palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver, and then carrying out vacuum smelting treatment to obtain alloy melt, wherein the vacuum smelting treatment condition is that the vacuum degree is 10 -5 Pa and the temperature is 1150 ℃. The continuous casting method is characterized in that the continuous casting method is that the speed is controlled to be 30mm/min, and the cooling water temperature is controlled to be 25 ℃. And carrying out wire drawing treatment on the silver alloy as-cast long-axis crystal bus, and preserving heat at the temperature of 410 ℃ for 25min to obtain a silver alloy wire, and carrying out annealing treatment on the silver alloy wire to obtain the high-resistance bonded silver wire, wherein the annealing treatment condition is that the temperature is 500 ℃.
Comparative example 5
In this embodiment, the bonded silver wire comprises the following components in weight percent:
3% of palladium, 0.005% of nickel, 0.0025% of cerium, 0.0025% of calcium, 0.003% of aluminum, 0.2% of chromium, 2% of tin, 94.7% of silver and the balance of unavoidable impurities.
Uniformly mixing palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver, and then carrying out vacuum smelting treatment to obtain alloy melt, wherein the vacuum smelting treatment condition is that the vacuum degree is 10 -5 Pa and the temperature is 1250 ℃. The alloy melt is continuously fed into a crystallizer in a slow continuous casting mode of a guide rod, and is solidified to form continuous grains in the crystallizer, so that a silver alloy as-cast long-axis crystal bus is obtained; the continuous casting mode is that the speed is controlled to be 40mm/min, and the cooling water temperature is controlled to be 25 ℃. And carrying out wire drawing treatment on the silver alloy as-cast long-axis crystal bus, and preserving heat at the temperature of 410 ℃ for 25min to obtain a silver alloy wire, and carrying out annealing treatment on the silver alloy wire to obtain the high-resistance bonded silver wire, wherein the annealing treatment condition is that the temperature is 500 ℃.
The wire gauge of the bonded silver wire prepared in comparative examples 1 to 5 was phi 0.02mm, the wire arc length was 2mm, and the test results of the mechanical properties and corrosion resistance (by using a sodium sulfide corrosion solution of 0.05mol/L, the sample was left in the interior for 30 minutes, and the surface corrosion discoloration condition was observed) were shown in Table 2 below.
TABLE 2
In summary, as can be seen from table 1, in embodiments 1-5 of the present application, by optimizing the doping element types of the silver-based material and the proportion of each doping element, the silver-based material is mainly doped with nickel, cerium, calcium, aluminum, chromium and tin elements according to a specific proportion to form a multi-element solid-melt structure, which is favorable for generating a synergistic promotion effect between each element in the structure, so that the mechanical property, the processing property and the chemical stability of the bonded silver wire are greatly improved, the traditional bonding wire is abandoned to improve the performances in all aspects without adding gold elements, the cost is greatly reduced, and meanwhile, the bonded silver wire obtained by the present application is verified to have high resistance, and the mechanical property and the chemical stability are superior to those of the bonding gold wire with the same specification.
In addition, as is clear from comparative examples 1 to 3, the kind and the proportion of the elements directly affect the mechanical properties and the chemical stability of the bonded silver wire, wherein experiments prove that the nickel element is not higher than 0.01%, and the chromium element has a significant influence on the mechanical properties of the bonded silver wire, but also directly affects the chemical stability of the bonded silver wire, and is not higher than 0.3%.
In addition, as is clear from comparative examples 4-5, the application is favorable for forming continuous grains of alloy melt in a crystallizer by optimizing and adjusting the technological parameter conditions of vacuum melting treatment and continuous casting, so that long-axis crystals are obtained, the technological parameter conditions of the vacuum melting treatment and the continuous casting need to be strictly controlled, otherwise, the internal structure of a bus bar of the long-axis crystals of the silver alloy as-cast state is influenced, the performances of the bonding silver wire obtained in the subsequent preparation are insufficient, particularly, the continuous casting speed is not higher than 35mm/min, and the performances of the bonding silver wire obtained in the aspects have a remarkable decline trend when the melting temperature is initially selected within the range of 1100-1200 ℃.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.

Claims (5)

1.一种高电阻的键合银丝，其特征在于，包括以下重量百分比的组分：1. A high-resistance silver bonding wire, characterized by comprising the following components in weight percentages: 钯1-5%、镍0.001-0.01%、铈0.0003-0.005%、钙0.0005-0.005%、铝 0.0002-0.005%、铬0.1-0.3%、锡 0.5-3%，其余量为银和不可避免的杂质，银不少于91.5%，所述高电阻的键合银丝的制备方法，包括：Palladium 1-5%, nickel 0.001-0.01%, cerium 0.0003-0.005%, calcium 0.0005-0.005%, aluminum 0.0002-0.005%, chromium 0.1-0.3%, tin 0.5-3%, the remainder being silver and unavoidable impurities, with silver being not less than 91.5%. The method for preparing the high-resistance silver bonding wire comprises: 将钯、镍、铈、钙、铝、铬、锡、银混合均匀后进行真空熔炼处理，真空熔炼处理条件为：真空度为10-5Pa，温度为1250-1300℃，得合金熔液；Palladium, nickel, cerium, calcium, aluminum, chromium, tin and silver are mixed uniformly and then subjected to vacuum melting treatment. The vacuum melting treatment conditions are: vacuum degree of 10 -5 Pa, temperature of 1250-1300 ° C, to obtain alloy melt; 采用引棒缓慢连续铸造的方式使所述合金熔液不断进入结晶器，连续铸造的方式条件为：速度控制为30-35mm/min，冷却水温控制为20-30℃，并在结晶器里不但凝固形成连续的晶粒，得银合金铸态长轴晶母线；The alloy melt is continuously fed into the crystallizer by a slow continuous casting method using a guide rod. The continuous casting conditions are: a speed controlled at 30-35 mm/min, a cooling water temperature controlled at 20-30° C., and the alloy melt solidifies in the crystallizer to form continuous grains and obtain a silver alloy cast long-axis crystal busbar. 对所述银合金铸态长轴晶母线进行拉丝处理，在400-420℃温度下保温20-30min，得到银合金线材；The silver alloy as-cast long-axis crystal busbar is subjected to wire drawing, and kept at a temperature of 400-420° C. for 20-30 minutes to obtain a silver alloy wire; 对所述银合金线材进行退火处理，得到高电阻的键合银丝。The silver alloy wire is annealed to obtain a high-resistance bonding silver wire. 2.如权利要求1所述的高电阻的键合银丝，其特征在于，所述高电阻的键合银丝包括以下重量百分比的组分：2. The high-resistance silver bonding wire according to claim 1, wherein the high-resistance silver bonding wire comprises the following components in weight percentage: 钯2-4%、镍0.003-0.007%、铈0.0015-0.0035%、钙0.0015-0.0035%、铝 0.0025-0.0035%、铬 0.15-0.25%、锡 1.5-2.5%，其余量为银和不可避免的杂质，银不少于91.5%。Palladium 2-4%, nickel 0.003-0.007%, cerium 0.0015-0.0035%, calcium 0.0015-0.0035%, aluminum 0.0025-0.0035%, chromium 0.15-0.25%, tin 1.5-2.5%, and the remainder is silver and unavoidable impurities, with silver not less than 91.5%. 3.如权利要求1所述的高电阻的键合银丝，其特征在于，所述高电阻的键合银丝包括以下重量百分比的组分：3. The high-resistance silver bonding wire according to claim 1 , wherein the high-resistance silver bonding wire comprises the following components in weight percentages: 钯3%、镍0.005%、铈0.0025%、钙0.0025%、铝 0.003%、铬 0.2%、锡 2%，其余量为银和不可避免的杂质，银不少于91.5%。Palladium 3%, nickel 0.005%, cerium 0.0025%, calcium 0.0025%, aluminum 0.003%, chromium 0.2%, tin 2%, the balance being silver and unavoidable impurities, with silver not less than 91.5%. 4.如权利要求1所述的高电阻的键合银丝，其特征在于，所述制备方法中退火处理条件：温度为500-550℃。4. The high-resistance bonding silver wire according to claim 1, wherein the annealing treatment condition in the preparation method is a temperature of 500-550°C. 5.一种如权利要求1-4任一所述的高电阻的键合银丝在集成电路封装技术领域中的应用。5. Application of the high-resistance silver bonding wire according to any one of claims 1 to 4 in the field of integrated circuit packaging technology.
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