CN115021822A - Optical transmission system - Google Patents
Optical transmission system Download PDFInfo
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- CN115021822A CN115021822A CN202210512021.6A CN202210512021A CN115021822A CN 115021822 A CN115021822 A CN 115021822A CN 202210512021 A CN202210512021 A CN 202210512021A CN 115021822 A CN115021822 A CN 115021822A
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- isolator
- soa chip
- transmission system
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/564—Power control
Abstract
The invention discloses an optical transmission system, which comprises a polarization beam combining light path, a mutual excitation light path and two semiconductor optical amplification units, wherein each semiconductor optical amplification unit comprises a first lens, a semiconductor optical amplifier chip and a second lens which are sequentially arranged, the polarization beam combining light path is arranged on one side of the first lens, which is back to the semiconductor optical amplifier chip, the mutual excitation light path is arranged on one side of the second lens, which is back to the semiconductor optical amplifier chip, so that light beams output by the rear ends of the two semiconductor optical amplifier chips can be respectively input into the semiconductor optical amplifier chips which are respectively different from each other through the mutual excitation light path to form two beam gain light beams, and the two beam gain light beams are integrated into parallel light through the polarization beam combining light path and output devices.
Description
Technical Field
The present invention relates to the field of optical technologies, and in particular, to an optical transmission system.
Background
In the assembly of optical devices, due to insertion loss and coupling loss in an optical path, optical energy pair loss can be caused, signal quality is reduced, and the existing increasingly high requirements for communication equipment are difficult to meet.
Disclosure of Invention
The invention provides an optical transmission system, which can gain two beams of a semiconductor optical amplification unit by utilizing mutually excited optical paths to obtain two beams of gain beams, and then combine the two beams of gain beams together through a polarization beam combining optical path to form a beam of parallel light, so that the quality of the output beam of the parallel light is high, and the output power is doubled.
The invention provides an optical transmission system which comprises a polarization beam combining light path, a mutual excitation light path and two semiconductor optical amplification units, wherein each semiconductor optical amplification unit comprises a first lens, a semiconductor optical amplifier chip and a second lens which are sequentially arranged, the polarization beam combining light path is arranged on one side, back to the semiconductor optical amplifier chip, of the first lens, the mutual excitation light path is arranged on one side, back to the semiconductor optical amplifier chip, of the second lens, so that light beams output by the rear ends of the two semiconductor optical amplifier chips can be respectively input into the semiconductor optical amplifier chips which are respectively different from each other through the mutual excitation light path to form two gain light beams, and the two gain light beams are integrated into parallel light through the polarization beam combining light path and output to a device.
In the optical transmission system according to an embodiment of the present invention, the semiconductor optical amplifier chip is an SOA chip, and the first lens and the second lens are respectively disposed at a light inlet and a light outlet of the SOA chip and are configured to adjust divergent light emitted from two ends of the SOA chip into parallel light.
In the optical transmission system according to an embodiment of the present invention, the SOA chip includes a first SOA chip and a second SOA chip, the mutual excitation optical path includes a first excitation optical path, and a light beam output from a rear end of the first SOA chip passes through the first excitation optical path and is input to the second SOA chip to form one gain light beam.
In the optical transmission system according to an embodiment of the present invention, the first excitation optical path includes a first spectroscope, a second spectroscope, and a first isolator, and the first spectroscope and the second spectroscope are provided at both ends of the first isolator.
In the optical transmission system according to an embodiment of the present invention, the mutual excitation optical path includes a second excitation optical path, and a light beam output from a rear end of the second SOA chip passes through the second excitation optical path and is input to the first SOA chip to form another gain light beam.
In the optical transmission system according to an embodiment of the present invention, the second excitation optical path includes a first total reflection mirror, a second total reflection mirror, and a second isolator, and the first total reflection mirror and the second total reflection mirror are disposed at both ends of the second isolator.
In the optical transmission system according to an embodiment of the present invention, a mounting direction of the first isolator on the first excitation optical path is opposite to a mounting direction of the second isolator on the second excitation optical path.
In the optical transmission system according to an embodiment of the present invention, the first dichroic mirror on the first excitation optical path has a first dichroic ratio, the second dichroic mirror has a second dichroic ratio, and the sum of the first and second dichroic ratios is equal to 1.
In the optical transmission system according to an embodiment of the present invention, the polarization beam combiner includes a third total reflector and a polarization beam combiner, the polarization beam combiner is disposed at a front end of the first SOA chip and has a first side and a second side that are adjacent to each other, and the third total reflector is disposed at a front end of the second SOA chip, so that a gain beam emitted from the second SOA chip can be reflected by the third total reflector and input into the polarization beam combiner, and be combined with the gain beam emitted from the first SOA chip into a parallel beam.
In the optical transmission system according to an embodiment of the present invention, the polarization beam combiner includes a third isolator and a fourth isolator, the third isolator is disposed between the first SOA chip and the polarization beam combiner, and the fourth isolator is disposed between the second SOA chip and the third total reflection mirror.
The technical scheme provided by the embodiment of the application can have the following beneficial effects: the application designs an optical transmission system, including polarization beam combination light path, excitation light path and two way semiconductor light amplification unit each other, wherein, polarization beam combination light path sets up the front end at two way semiconductor light amplification unit, excitation light path sets up the rear end at two way semiconductor light amplification unit each other, so that can utilize the light path of exciting each other to gain and obtain two bundles of gain light beams to the light beam of two way semiconductor light amplification unit, then form a beam of parallel light with two bundles of gain light beam combination together through polarization beam combination light path, make the light beam quality of the parallel light of output higher while, output doubles.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an optical transmission system according to an embodiment of the present application;
FIG. 2 is a schematic view of the optical transmission system of FIG. 1 at another angle;
FIG. 3 is a schematic optical path diagram of the first excitation optical path of FIG. 1;
FIG. 4 is a schematic optical path diagram of a second excitation optical path of FIG. 1;
fig. 5 is a schematic diagram of the optical path of the polarization beam combiner of fig. 1.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Some embodiments of the invention are described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
As shown in fig. 1 to 5, an optical transmission system provided by the present application includes a polarization beam combining optical path 200, a mutual excitation optical path 100, and two semiconductor optical amplifying units, which are a first semiconductor optical amplifying unit 10 and a second semiconductor optical amplifying unit 20, respectively, wherein each semiconductor optical amplifying unit includes a first lens, a semiconductor optical amplifier chip, and a second lens, which are sequentially disposed, the polarization beam combining optical path is disposed on a side of the first lens facing away from the semiconductor optical amplifier chip, the mutual excitation optical path is disposed on a side of the second lens facing away from the semiconductor optical amplifier chip, so that light beams output from rear ends of the two semiconductor optical amplifier chips can be respectively input into different semiconductor optical amplifier chips through the mutual excitation optical paths to form two gain light beams, and then the two gain light beams are integrated into a parallel light beam through the polarization beam combining optical path 200 and output to a device, the output parallel light beam has high quality, and the output power can be doubled.
Illustratively, the semiconductor optical amplifier chip includes a first semiconductor optical amplifier chip 11 and a second semiconductor optical amplifier chip 21, the first lens includes a first chip lens 13 and a third chip lens 23, the second lens includes a second chip lens 12 and a fourth chip lens 22, the first semiconductor optical amplifier chip 11 is disposed between the first chip lens 13 and the second chip lens 12 to constitute the first semiconductor optical amplifying unit 10, the second semiconductor optical amplifier chip 21 is disposed between the third chip lens 23 and the fourth chip lens 22 to constitute the second semiconductor optical amplifying unit 20, the mutual excitation optical path 100 is disposed on a side of the second chip lens 12 and the fourth chip lens 22 facing away from the first semiconductor optical amplifier chip 11 and the second semiconductor optical amplifier chip 21, and the polarization beam combining optical path 200 is disposed on a side of the first chip lens 13 and the third chip lens 23 facing away from the first semiconductor optical amplifier chip 11 and the second optical amplifier chip 21 One side.
In an optional embodiment, the semiconductor optical amplifier chip is an SOA chip, and is capable of emitting ASE light, where the first lens and the second lens are respectively disposed at a light inlet and a light outlet of the SOA chip, and are used to adjust divergent light emitted from two ends of the SOA chip into parallel light.
Illustratively, the first semiconductor optical amplifier chip 11 and the second semiconductor optical amplifier chip 21 are both SOA chips, and the working principle thereof is the same as that of a semiconductor laser, and the semiconductor optical amplifier chip has the advantages of supporting high speed, high bandwidth, low power consumption, high gain, miniaturization, easy integration and the like. When the SOA chip is powered on, parallel light beams output from the rear end of the SOA chip can enter the mutual excitation optical path 100 through the second chip lens 12 or the fourth chip lens 22 and then are respectively input into different SOA chips to form gain light beams.
Specifically, when the first semiconductor optical amplifier chip 11 is powered on, the parallel light beam output from the rear end of the first semiconductor optical amplifier chip 11 can enter the mutual excitation optical path 100 after passing through the second chip lens 12, and enter the second semiconductor optical amplifier chip 21 after being refracted or reflected by the mutual excitation optical path 100 to form one gain light beam.
When the second semiconductor optical amplifier chip 21 is powered on, the parallel light beam output from the rear end of the second semiconductor optical amplifier chip 21 can enter the mutual excitation optical path 100 after passing through the fourth chip lens 22, and enter the first semiconductor optical amplifier chip 11 to form another gain light beam after being refracted or reflected by the mutual excitation optical path 100, and then the two gain light beams are output from the front ends of the first semiconductor optical amplifier chip 11 and the second semiconductor optical amplifier chip 21 and are integrated into a parallel light beam through the polarization beam combining optical path 200 and output to the device,
the first chip lens 13 and the second chip lens 12 are respectively disposed at the light inlet and the light outlet of the first semiconductor optical amplifier chip 11, and the third chip lens 23 and the fourth chip lens 22 are respectively disposed at the light inlet and the light outlet of the second semiconductor optical amplifier chip 21, so that divergent light emitted from two ends of the first semiconductor optical amplifier chip 11 and the second semiconductor optical amplifier chip 21 can be adjusted to be parallel light.
Illustratively, the SOA chip includes a first SOA chip and a second SOA chip, and the mutual excitation optical path 100 includes a first excitation optical path, where a light beam output from the rear end of the first SOA chip passes through the first excitation optical path and is input to the second SOA chip to form one of gain light beams, so as to amplify the light beam output from the rear end of the first SOA chip or provide a gain function.
Illustratively, the mutual excitation optical path further includes a second excitation optical path, and a light beam output by the rear end of the second SOA chip passes through the second excitation optical path and is input to the first SOA chip to form another beam of gain light beam, so as to amplify the light beam output by the rear end of the second SOA chip or provide a gain function.
In an alternative embodiment, the first excitation optical path includes a first beam splitter 31, a second beam splitter 32 and a first isolator 33, wherein the first beam splitter 31 and the second beam splitter 32 are disposed at two ends of the first isolator 33, the light beam output at the back end of the first SOA chip is split into two parallel lights with a certain power proportion by the first beam splitter 31, and a part of the parallel lights passes through the first isolator 33 and the second beam splitter 32 in sequence and then is input to the second SOA chip, because the first isolator 33 is an optical isolator, and the first SOA chip and the second SOA chip are two-end devices, both ends of which have noise light output and amplify the noise light, therefore, the first isolator 33 can isolate the reverse light of the second SOA chip, and the reverse light of the second SOA chip is prevented from affecting the light transmission of the second SOA chip, and the reverse light of the first SOA chip can be input to the second SOA chip by the first isolator 33 for amplification or gain, so as to realize signal amplification transmission without influencing the stability of the whole transmission system.
In an optional embodiment, the second excitation optical path includes a first total reflector 41, a second total reflector 42, and a second isolator 43, where the first total reflector 41 and the second total reflector 42 are disposed at two ends of the second isolator 43, and after a light beam output from a rear end of the second SOA chip is reflected by the first total reflector 41, a certain proportion of parallel light is input to the second total reflector 42 through the second isolator 43, and the light beam enters the first SOA chip after being reflected by the second total reflector 42 to be amplified or gained, where the second isolator 43 may partition reverse light of the first SOA chip, so as to avoid that the reverse light of the first SOA chip affects light transmission of the first SOA chip, so as to implement signal amplification transmission without affecting stability of the entire transmission system.
In an optional embodiment, the mounting direction of the first isolator 33 on the first excitation light path is opposite to the mounting direction of the second isolator 43 on the second excitation light path, so that part of light on the first SOA chip can be input into the second SOA chip through the first isolator 33, and another part of light on the first SOA chip is isolated by the reverse isolation function of the second isolator 43 after passing through the second isolator 43 and cannot be input into the second SOA chip; similarly, part of the light on the second SOA chip can be input into the first SOA chip through the second isolator 43, and another part of the light on the second SOA chip is isolated by the reverse isolation function of the first isolator 33 and cannot be input into the first SOA chip.
In an alternative embodiment, the first beam splitter 31 on the first excitation optical path has a first beam splitting ratio, the second beam splitter 32 has a second beam splitting ratio, and the sum of the first beam splitting ratio and the second beam splitting ratio is equal to 1. After the light output from the rear end of the first SOA chip is passed through the first beam splitter 31, the first isolator 33 and the second beam splitter 32, the maximum input value thereof is the optical power output when the first SOA chip operates at the current, the first optical splitting efficiency is the coupling efficiency of the optical path.
In an alternative embodiment, the polarization beam combiner 200 includes a third total reflector 52 and a polarization beam combiner 51, where the polarization beam combiner 51 is disposed at the front end of the first SOA chip and has a first side and a second side adjacent to each other, the third total reflector 52 is disposed at the front end of the second SOA chip, so that the gain beam emitted from the second SOA chip can be reflected by the third total reflector 52 and input into the polarization beam combiner 51 from the first side, the gain beam emitted from the first SOA chip is input into the polarization beam combiner 51 from the second side, and the two gain beams are combined into one parallel beam, so that the output power is doubled while the beam quality of the output parallel beam is high.
In an alternative embodiment, the polarization beam combiner 200 includes a third isolator 53 and a fourth isolator 54, where the third isolator 53 is disposed between the first SOA chip and the polarization beam combiner 51, and the fourth isolator 54 is disposed between the second SOA chip and the third total reflection mirror 52, and they mainly use the first SOA chip and the second SOA chip in the optical transmission system to perform mutual excitation, and then generate two gain beams or gain amplified beams, and then polarize and combine the two gain beams through the polarization beam combiner 51, so as to obtain an ASE optical power output greater than 18 dBm.
Specifically, at present, manufacturers of SOA chips hardly make the ASE optical power output of a single chip level larger than 18dBm, and considering the reduction of Ripple influence, the output of the SOA chips is far lower than 18 dBm. Especially in the assembly of the device, the final total output optical power of the device is far lower than 18dBm and higher due to insertion loss and coupling loss in the optical path, and can only reach about 15dBm basically.
The first SOA chip and the second SOA chip are assembled in parallel in the device, and then two spectroscopes and two total reflection mirrors with certain light splitting ratios are assembled at the rear ends of the first SOA chip and the second SOA chip respectively, so that two mutually-excited light paths are formed. Isolators are respectively added in the polarization beam combination light path 200 and the mutual excitation light path 100 of the first SOA chip and the second SOA chip, so that the standing wave problem caused by back-and-forth reflection of light beams is prevented.
By selecting a beam splitter with a suitable splitting ratio, the optical power input from the mutual excitation optical path 100 to the first SOA chip or the second SOA chip can be controlled, and the maximum input optical power of the first SOA chip or the second SOA chip is prevented from being exceeded. When the first SOA chip and the second SOA chip are powered on to emit light, in the two mutually-excited optical paths 100, the ASE light emitted from the rear end of one semiconductor optical amplifier chip is input into the other semiconductor optical amplifier chip, the input light is subjected to gain amplification in the semiconductor optical amplifier chip, the amplified ASE light is emitted from the front end of the semiconductor optical amplifier chip, and finally, the two gain light beams of the polarization beam combiner 200 are combined into one beam through the third total reflector 52 and the polarization beam combiner 51 and are output, so that the output ASE light power can meet the optical power requirement of more than 18 dBm.
In the description of the present invention, it should be noted that the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected unless otherwise explicitly stated or limited. Either mechanically or electrically. Either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The above disclosure provides many different embodiments, or examples, for implementing different features of the invention. The foregoing description of specific example components and arrangements has been presented to simplify the present disclosure. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
In the description of the present specification, reference to the description of the terms "one embodiment", "some embodiments", "an illustrative embodiment", "an example", "a specific example", or "some examples", etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. An optical transmission system is characterized by comprising a polarization beam combining light path, a mutual excitation light path and two semiconductor light amplification units, wherein each semiconductor light amplification unit comprises a first lens, a semiconductor light amplifier chip and a second lens which are sequentially arranged, the polarization beam combining light path is arranged on one side, back to the semiconductor light amplifier chip, of the first lens, the mutual excitation light path is arranged on one side, back to the semiconductor light amplifier chip, of the second lens, so that light beams output by the rear ends of the two semiconductor light amplifier chips can be respectively input into the semiconductor light amplifier chips which are respectively different from each other through the mutual excitation light path to form two beams of gain light beams, and one beam of the two beams of gain light beams are integrated into parallel light through the polarization beam combining light path and output to a device.
2. The optical transmission system according to claim 1, wherein the semiconductor optical amplifier chip is an SOA chip, and the first lens and the second lens are respectively disposed at a light entrance and a light exit of the SOA chip and configured to adjust divergent light emitted from both ends of the SOA chip into parallel light.
3. The optical transmission system according to claim 2, wherein the SOA chip includes a first SOA chip and a second SOA chip, the mutual excitation optical path includes a first excitation optical path, and the optical beam output from the rear end of the first SOA chip passes through the first excitation optical path and then is input to the second SOA chip to form one of the gain optical beams.
4. The optical transmission system according to claim 3, wherein the first excitation optical path includes a first spectroscope, a second spectroscope, and a first isolator, and the first spectroscope and the second spectroscope are provided at both ends of the first isolator.
5. The optical transmission system according to claim 3, wherein the mutual excitation optical path includes a second excitation optical path, and the optical beam output from the rear end of the second SOA chip passes through the second excitation optical path and then is input to the first SOA chip to form another gain optical beam.
6. The optical transmission system according to claim 5, wherein the second excitation optical path includes a first total reflection mirror, a second total reflection mirror, and a second isolator, the first total reflection mirror and the second total reflection mirror being provided at both ends of the second isolator.
7. The optical transmission system of claim 6, wherein the first isolator is mounted on the first excitation optical path in a direction opposite to a direction in which the second isolator is mounted on the second excitation optical path.
8. The optical transmission system according to claim 6, wherein the first dichroic mirror on the first excitation optical path has a first dichroic ratio, the second dichroic mirror has a second dichroic ratio, and a sum of the first and second dichroic ratios is equal to 1.
9. The optical transmission system according to claim 5, wherein the polarization beam combiner comprises a third total reflector and a polarization beam combiner, the polarization beam combiner is disposed at a front end of the first SOA chip and has a first side and a second side which are adjacent to each other, and the third total reflector is disposed at a front end of the second SOA chip, so that the gain beam emitted from the second SOA chip can be reflected by the third total reflector to be input into the polarization beam combiner and combined with the gain beam emitted from the first SOA chip into a parallel beam.
10. The optical transmission system according to claim 9, wherein the polarization beam combiner path includes a third isolator and a fourth isolator, the third isolator being disposed between the first SOA chip and the polarization beam combiner, the fourth isolator being disposed between the second SOA chip and a third total reflection mirror.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4995696A (en) * | 1988-05-20 | 1991-02-26 | Oki Electric Industry Co., Ltd. | Optical amplifier module |
| JP2007104064A (en) * | 2005-09-30 | 2007-04-19 | Nippon Telegr & Teleph Corp <Ntt> | Optical communication system and semiconductor optical amplifier unit |
| CN101013247A (en) * | 2007-02-07 | 2007-08-08 | 福州高意通讯有限公司 | High-performance free space fibre-optical amplifier module |
| US20100007944A1 (en) * | 2008-07-10 | 2010-01-14 | Fujitsu Limited | Optical semiconductor device and manufacturing method therefor |
| CN205280985U (en) * | 2015-11-18 | 2016-06-01 | 深圳新飞通光电子技术有限公司 | Parallel emission of light subassembly of multichannel wavelength |
| CN108259088A (en) * | 2016-12-29 | 2018-07-06 | 华为技术有限公司 | Optical modulator and light emission system |
| CN108352902A (en) * | 2015-09-25 | 2018-07-31 | 阿尔卡特朗讯 | The amplifying device with amplifying stage and process level of the tool through polarization SOA for amplifying the optical signal in WDM emission systems |
| CN110718855A (en) * | 2019-09-18 | 2020-01-21 | 深圳市星汉激光科技有限公司 | Semiconductor laser device |
| CN212304190U (en) * | 2020-07-10 | 2021-01-05 | 河北工业大学 | All-solid-state group beam laser |
| CN114019617A (en) * | 2021-10-19 | 2022-02-08 | 昂纳信息技术（深圳）有限公司 | Optical signal transmission system |
| CN114415295A (en) * | 2022-01-17 | 2022-04-29 | 成都市德科立菁锐光电子技术有限公司 | Light emitting device, optical module and method for improving optical power |
-
2022
- 2022-05-12 CN CN202210512021.6A patent/CN115021822B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4995696A (en) * | 1988-05-20 | 1991-02-26 | Oki Electric Industry Co., Ltd. | Optical amplifier module |
| JP2007104064A (en) * | 2005-09-30 | 2007-04-19 | Nippon Telegr & Teleph Corp <Ntt> | Optical communication system and semiconductor optical amplifier unit |
| CN101013247A (en) * | 2007-02-07 | 2007-08-08 | 福州高意通讯有限公司 | High-performance free space fibre-optical amplifier module |
| US20100007944A1 (en) * | 2008-07-10 | 2010-01-14 | Fujitsu Limited | Optical semiconductor device and manufacturing method therefor |
| CN108352902A (en) * | 2015-09-25 | 2018-07-31 | 阿尔卡特朗讯 | The amplifying device with amplifying stage and process level of the tool through polarization SOA for amplifying the optical signal in WDM emission systems |
| CN205280985U (en) * | 2015-11-18 | 2016-06-01 | 深圳新飞通光电子技术有限公司 | Parallel emission of light subassembly of multichannel wavelength |
| CN108259088A (en) * | 2016-12-29 | 2018-07-06 | 华为技术有限公司 | Optical modulator and light emission system |
| CN110718855A (en) * | 2019-09-18 | 2020-01-21 | 深圳市星汉激光科技有限公司 | Semiconductor laser device |
| CN212304190U (en) * | 2020-07-10 | 2021-01-05 | 河北工业大学 | All-solid-state group beam laser |
| CN114019617A (en) * | 2021-10-19 | 2022-02-08 | 昂纳信息技术（深圳）有限公司 | Optical signal transmission system |
| CN114415295A (en) * | 2022-01-17 | 2022-04-29 | 成都市德科立菁锐光电子技术有限公司 | Light emitting device, optical module and method for improving optical power |
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