CN115020608A

CN115020608A - Light emitting device

Info

Publication number: CN115020608A
Application number: CN202210615492.XA
Authority: CN
Inventors: 康建喜; 朱映光; 张国辉; 鲁天星; 谢静; 胡永岚
Original assignee: Guan Yeolight Technology Co Ltd
Current assignee: Guan Yeolight Technology Co Ltd
Priority date: 2022-05-31
Filing date: 2022-05-31
Publication date: 2022-09-06

Abstract

The invention discloses a light emitting device, comprising: the packaging structure comprises a substrate, a light emitting structure layer arranged on one side of the substrate and a packaging layer arranged on one side of the light emitting structure layer far away from the substrate; the packaging layer comprises at least one first inorganic layer and at least one second inorganic layer, the first inorganic layer and the second inorganic layer are alternately stacked, the first inorganic layer is arranged on one side, adjacent to the light-emitting structure layer, of the packaging layer, and the second inorganic layer is made of inorganic materials with reticular chemical bonds; the packaging layer also comprises a third inorganic layer, and the third inorganic layer is arranged on one side, far away from the substrate, of the laminated structure of the first inorganic layer and the second inorganic layer; the sum of the total thickness of the at least one first inorganic layer and the thickness of the third inorganic layer is less than or equal to the total thickness of the at least one second inorganic layer. The embodiment of the invention reduces the manufacturing cost of the light-emitting device, ensures that the prepared packaging layer has fewer defects, and has better water resistance and lower overall stress.

Description

Light emitting device

Technical Field

The invention relates to the technical field of display, in particular to a light-emitting device.

Background

An Organic Light-Emitting Diode (OLED) is a photoelectric device that emits Light by carrier injection and recombination. The specific process is that electrons are injected through a cathode and are transmitted to a light-emitting layer through an electron transmission material, holes are injected through an anode and are transmitted to the light-emitting layer through a hole transmission material, the electrons and the holes are combined in the light-emitting layer to form excitons, and the excitons are de-excited to emit light. Light-emitting devices comprising OLEDs have characteristics of good uniformity of light emission, being light and thin, being bendable, flexible, stretchable, and the like, and thus are receiving much attention.

However, since the OLED is extremely sensitive to water and oxygen, the OLED needs to be packaged, a currently mainstream packaging method is thin-film packaging, a main structure of the thin-film packaging is inorganic-organic, and the packaging structure needs to use expensive inkjet printing equipment, so that the manufacturing cost of the OLED light-emitting device is high, and the water blocking capability of the organic material is weak.

Disclosure of Invention

The invention provides a light-emitting device, which aims to reduce the manufacturing cost of the light-emitting device and ensure that a prepared packaging layer has fewer defects, better water resistance and lower overall stress.

According to an aspect of the present invention, there is provided a light emitting device including:

the packaging structure comprises a substrate, a light emitting structure layer arranged on one side of the substrate and a packaging layer arranged on one side of the light emitting structure layer far away from the substrate;

the packaging layer comprises at least one first inorganic layer and at least one second inorganic layer, the first inorganic layer and the second inorganic layer are alternately stacked, the first inorganic layer is arranged on one side, adjacent to the light emitting structure layer, of the packaging layer, and the second inorganic layer is made of inorganic materials with reticular chemical bonds;

the packaging layer further comprises a third inorganic layer, and the third inorganic layer is arranged on one side, away from the substrate, of the laminated structure of the first inorganic layer and the second inorganic layer;

the first inorganic layer covers the light emitting structure layer, and the vertical projection of the second inorganic layer on the substrate at least covers the light emitting structure layer; a vertical projection of the third inorganic layer on the substrate covers the first inorganic layer;

the sum of the total thickness of the at least one first inorganic layer and the thickness of the third inorganic layer is less than or equal to the total thickness of the at least one second inorganic layer.

Optionally, the package layer further includes a barrier adhesive layer and a barrier film layer, and the barrier film layer is disposed on one side of the barrier adhesive layer away from the substrate; the barrier adhesive layer covers the third inorganic layer; the barrier adhesive layer and the barrier film layer are used for blocking water and oxygen;

the roughness of the surface of the third inorganic layer adjacent to the blocking glue layer is larger than a preset value.

Optionally, the roughness of the surface of the third inorganic layer adjacent to the barrier glue layer is greater than or equal to 1nm and less than or equal to 50 nm.

Optionally, a boundary of a vertical projection of the second inorganic layer on the substrate is a first boundary, a boundary of a vertical projection of the first inorganic layer adjacent to the second inorganic layer and located on a side of the second inorganic layer adjacent to the substrate is a second boundary, and the first boundary is located between the second boundary and the light emitting structure layer.

Optionally, the material used for the barrier adhesive layer includes polyolefin or rubber, and the material used for the barrier adhesive layer also includes a water-absorbing material;

the water absorbing material comprises at least one of metal oxides such as calcium oxide, barium oxide, sodium oxide and magnesium oxide;

the barrier film layer comprises a metal foil or a plastic water-resistant film.

Optionally, the thickness of the first inorganic layer ranges from 10nm to 2 μm, and the thickness of the third inorganic layer ranges from 50nm to 500 nm.

Optionally, the encapsulation layer includes a first inorganic layer, a second inorganic layer and a third inorganic layer,

or the packaging layer comprises a first inorganic layer, a second inorganic layer, a first inorganic layer and a third inorganic layer which are stacked;

alternatively, the encapsulation layer includes a first inorganic layer, a second inorganic layer, and a third inorganic layer, which are stacked.

Optionally, the film stress of the encapsulation layer is greater than or equal to-100 Mpa, less than or equal to 100Mpa, and greater than or equal to-100 Mpa.

Optionally, the materials used for the first inorganic layer and the third inorganic layer each include at least one of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, and titanium oxide.

In this embodiment, the encapsulation layer includes at least one first inorganic layer, at least one second inorganic layer and a third inorganic layer, the material adopted by the second inorganic layer includes an inorganic material with a mesh chemical bond, the second inorganic layer can play a role in blocking water and oxygen and buffering stress between adjacent inorganic layers, and the total thickness of the at least one first inorganic layer and the thickness of the third inorganic layer is set to be less than or equal to the total thickness of the at least one second inorganic layer, so that the prepared encapsulation layer has fewer defects, better water blocking performance and lower overall stress. And the second inorganic layer can be prepared by the same equipment as the first inorganic layer and the third inorganic layer, expensive equipment such as ink-jet printing and the like is not required to be additionally arranged, and the process cost is reduced.

It should be understood that the statements in this section are not intended to identify key or critical features of the embodiments of the present invention, nor are they intended to limit the scope of the invention. Other features of the present invention will become apparent from the following description.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic view of a light-emitting device according to an embodiment of the present invention;

fig. 2 is a schematic view of another light-emitting device provided in an embodiment of the present invention;

FIG. 3 is a schematic diagram of another light-emitting device provided by an embodiment of the present invention;

fig. 4 is a schematic view of another light-emitting device provided by an embodiment of the invention;

fig. 5 is a schematic view of another light-emitting device according to an embodiment of the present invention.

Detailed Description

In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

The present embodiment provides a light emitting device, and fig. 1 is a schematic diagram of a light emitting device provided in an embodiment of the present invention, and referring to fig. 1, the light emitting device includes:

the light emitting diode package structure comprises a substrate 10, a light emitting structure layer 20 arranged on one side of the substrate 10 and a packaging layer 30 arranged on one side of the light emitting structure layer 20 far away from the substrate 10;

the encapsulation layer 30 includes at least one first inorganic layer 31 and at least one second inorganic layer 32, the first inorganic layer 31 and the second inorganic layer 32 are alternately stacked, and the first inorganic layer 31 is disposed on a side of the encapsulation layer 30 adjacent to the light emitting structure layer 20, and the second inorganic layer 32 is made of an inorganic material having a network chemical bond;

the encapsulation layer 30 further includes a third inorganic layer 33, where the third inorganic layer 33 is disposed on a side of the laminated structure of the first inorganic layer 31 and the second inorganic layer 32 away from the substrate 10;

the first inorganic layer 31 covers the light emitting structure layer 20, and the second inorganic layer 32 at least covers the light emitting structure layer 20 in a vertical projection on the substrate 10; the vertical projection of the third inorganic layer 33 on the substrate 10 covers the first inorganic layer 31;

the sum of the total thickness of the at least one first inorganic layer 31 and the thickness of the third inorganic layer 33 is less than or equal to the total thickness of the at least one second inorganic layer 32.

The substrate 10 may be a flexible substrate or a rigid substrate. The flexible substrate can be made of organic polymer materials such as PET, PEN and PI, and the rigid substrate can be a glass substrate. The light emitting structure layer 20 includes at least one OLED, and each OLED may include an anode layer, a first functional layer, an organic light emitting layer, a second functional layer, and a cathode layer, which are sequentially stacked. The first functional layer may include at least one of a hole injection layer, a hole transport layer, and an electron blocking layer, and the second functional layer may include at least one of a hole blocking layer, an electron transport layer, and an electron injection layer. The material of the anode layer comprises ITO and/or IZO; the material of the cathode layer comprises Ag and/or Al. The encapsulation layer 30 is used to block water and oxygen, and prevent water vapor and oxygen from entering the light emitting device to corrode the light emitting structure layer.

The number of the first inorganic layer 31 in the encapsulation layer 30 may be one, two or more, and the number of the second inorganic layer 32 may also be one, two or more. Illustratively, the encapsulation layer 30 includes a first inorganic layer 31, a second inorganic layer 32, a first inorganic layer 31, and a third inorganic layer 33, which are sequentially stacked. The first inorganic layer 31 and the third inorganic layer 33 both have a function of blocking water and oxygen, and the first inorganic layer 31 and the third inorganic layer 33 may be made of inorganic materials. The material used for the second inorganic layer 32 includes an inorganic material having a network chemical bond, and the inorganic material has the related characteristics of an organic material due to the network chemical bond, so that the second inorganic layer 32 has a lower stress and a stronger step coverage, and the characteristics of the second inorganic layer 32 are between those of the organic layer and the inorganic layer, for example, the second inorganic layer 32 may be made of silicon nitride having a network chemical bond, and the characteristics of the second inorganic layer 32 are between those of the organic layer and the silicon nitride.

By arranging the encapsulation layer 30 to include the second inorganic layer 32, the second inorganic layer 32 can buffer the stress of other adjacent inorganic layers and can block water and oxygen, so that the encapsulation layer 30 has a stronger water and oxygen blocking capability, and the second inorganic layer 32 can be prepared by using the preparation process of the inorganic layer, for example, the second inorganic layer 32 can be prepared by using the Plasma Enhanced Chemical Vapor Deposition (PECVD) and other processes, that is, the second inorganic layer 32 can be prepared by using the same equipment as the first inorganic layer 31 and the third inorganic layer 33, and the expensive inkjet printing process is not required, thereby reducing the process cost.

In addition, the inventors found through research that the thickness distribution of the first inorganic layer 31, the second inorganic layer 32 and the third inorganic layer 33 affects the overall film forming quality of the encapsulation layer 30, and when the total thickness of the at least one first inorganic layer 31 and the thickness of the third inorganic layer 33 is set to be less than or equal to the total thickness of the at least one second inorganic layer 32, the prepared encapsulation layer 30 has fewer defects, better water blocking performance and lower overall stress.

In this embodiment, the encapsulation layer 30 includes at least one first inorganic layer 31, at least one second inorganic layer 32, and a third inorganic layer 33, the material used for the second inorganic layer 32 includes an inorganic material with a network chemical bond, the second inorganic layer 32 can play a role in blocking water and oxygen and buffering stress between adjacent inorganic layers, and the sum of the total thickness of the at least one first inorganic layer 31 and the thickness of the third inorganic layer 33 is set to be less than or equal to the total thickness of the at least one second inorganic layer 32, so that the prepared encapsulation layer has fewer defects, better water blocking performance, and lower overall stress. And the second inorganic layer can be prepared by the same equipment as the first inorganic layer and the third inorganic layer, expensive equipment such as ink-jet printing and the like is not required to be additionally arranged, and the process cost is reduced.

Fig. 2 is a schematic view of another light emitting device provided in an embodiment of the present invention, and optionally, referring to fig. 2, the encapsulation layer 30 further includes a barrier adhesive layer 34 and a barrier film layer 35, where the barrier film layer 35 is disposed on a side of the barrier adhesive layer 34 away from the substrate 10; the barrier adhesive layer 34 covers the third inorganic layer 33; the barrier adhesive layer 34 and the barrier film layer 35 are used for blocking water and oxygen;

the roughness of the surface of the third inorganic layer 33 adjacent to the barrier rubber layer 34 is greater than a preset value.

Specifically, the preset value may be set according to the adhesion of the barrier adhesive layer 34, the difficulty of the preparation process of the third inorganic layer 33, and the like, and an exemplary preset value may be greater than or equal to 1 nm. The barrier adhesive layer 34 has a certain adhesiveness for attaching the barrier film layer 35 to the surface of the third inorganic layer 33. The surface of the third inorganic layer 33 adjacent to the blocking adhesive layer 34 has relatively large roughness, so that the adhesion between the blocking adhesive layer 34 and the third inorganic layer 33 is relatively good, the surface of the blocking adhesive layer 34 and the surface of the third inorganic layer 33 are combined more tightly, the difficulty of water and oxygen entering the inside of the light-emitting device through the interface between the blocking layer 34 and the third inorganic layer 33 is increased, and the side water blocking performance of the packaging layer 30 is improved.

In addition, the barrier glue layer 34 may cover the third inorganic layer 33 and the area of the substrate 10 not covered by the third inorganic layer 33, and the barrier film layer 35 may cover the entire surface of the barrier glue layer 34 away from the substrate 10.

Optionally, the roughness of the surface of the third inorganic layer 33 adjacent to the barrier glue layer 34 is greater than or equal to 1nm and less than or equal to 50 nm.

Specifically, when the surface roughness of the third inorganic layer 33 adjacent to the blocking adhesive layer 34 is too small, the improvement degree of the adhesion between the blocking adhesive layer 34 and the third inorganic layer 33 is limited, and when the surface roughness is too large, the water and oxygen blocking of the third inorganic layer 33 is not facilitated, and by arranging that the roughness of the surface of the third inorganic layer 33 adjacent to the blocking adhesive layer 34 is greater than or equal to 1nm and less than or equal to 50nm, the adhesion between the blocking adhesive layer 34 and the third inorganic layer 33 is better, and meanwhile, the third inorganic layer 33 is ensured to have stronger water and oxygen blocking performance. Illustratively, the roughness of the surface of the third inorganic layer 33 adjacent to the barrier glue layer 34 may be 5nm, 10nm, 20nm, 50nm, or the like.

Fig. 3 is a schematic diagram of another light emitting device according to an embodiment of the present invention, and optionally, referring to fig. 3, a boundary of a vertical projection of the second inorganic layer 32 on the substrate 10 is a first boundary, and a boundary of a vertical projection of the first inorganic layer 31 adjacent to the second inorganic layer 32 and located on a side of the second inorganic layer 32 adjacent to the substrate 10 is a second boundary, where the first boundary is located between the second boundary and the light emitting structure layer 20.

With this arrangement, the second inorganic layer 32 does not extend to the edge of the first inorganic layer 31 adjacent to the second inorganic layer 32 and located on the side adjacent to the substrate 10, and the second inorganic layer 32 covers only a partial region of the first inorganic layer 31, so that the number of interfaces existing in the edge region of the light-emitting device is reduced, the path of water and oxygen entering the light-emitting device through the lateral boundary of the light-emitting device is reduced, and the water and oxygen blocking performance of the encapsulation layer 30 is further improved.

Optionally, the material used for the barrier adhesive layer 34 includes polyolefin or rubber, and the material used for the barrier adhesive layer 34 also includes a water-absorbing material;

the barrier film layer 35 comprises a metal foil or a plastic water barrier film.

Specifically, the water-absorbing material may include at least one of metal oxides such as calcium oxide, barium oxide, sodium oxide, magnesium oxide, and the like, and by providing the water-absorbing material in the barrier adhesive layer 34, when external water enters the barrier adhesive layer 34, the water-absorbing material in the barrier adhesive layer 34 locks the water, thereby preventing the water from further entering the light-emitting device, and further improving the barrier water-oxygen performance of the encapsulation layer 30.

In addition, the metal foil may be made of metal such as titanium, aluminum, copper, iron, or metal alloy, the plastic water blocking film may include an organic material layer and an inorganic material layer deposited on the organic material layer, the organic material layer may be made of organic material such as PET, PI, PEN, or the like, and the inorganic material layer may be made of inorganic material such as aluminum oxide, titanium oxide, silicon nitride, or silicon oxynitride.

Alternatively, the thickness of the first inorganic layer 31 is in the range of 10nm to 2 μm, and the thickness of the third inorganic layer 33 is in the range of 50 to 500 nm.

Specifically, the too small thickness of the first inorganic layer 31 may affect the water and oxygen blocking capability, the too large thickness has large stress, and the thickness range of the first inorganic layer 31 is set to 10nm to 2 μm, so that the first inorganic layer 31 has small stress while the first inorganic layer 31 has high water and oxygen blocking capability. In addition, the first inorganic Layer 31 may be prepared by a PECVD process, Atomic Layer Deposition (ALD), sputtering, or the like, and when the first inorganic Layer 31 is prepared by PECVD, the thickness of the first inorganic Layer 31 ranges from 500nm to 2 μm, and the first inorganic Layer 31 prepared by PECVD has a good ability of blocking water and oxygen, and does not cause excessive stress of the film Layer during the manufacturing process due to the excessive thickness of the film Layer.

When the first inorganic layer 31 is prepared using the ALD process, the thickness of the first inorganic layer 31 ranges from 10nm to 500 nm. The first inorganic layer 31 with the thickness in the range prepared by the ALD process has good film forming quality and good water and oxygen blocking capability, does not form crystals during manufacturing due to too thick film layer to influence the film forming quality, and ensures that the first inorganic layer 31 has small stress.

In addition, too small thickness of the third inorganic layer 33 may affect the water and oxygen blocking capability thereof, and may limit the surface roughness thereof, too large thickness of the third inorganic layer 33 may cause too large stress of the film layer thereof, and by setting the thickness of the third inorganic layer 33 to be in the range of 50-500nm, while ensuring that the third inorganic layer 33 has higher water and oxygen blocking capability, the third inorganic layer 33 may have smaller stress, and the surface of the third inorganic layer 33 may be provided with larger roughness. The third inorganic layer 33 may be prepared by a PECVD process or a sputtering process.

Alternatively, referring to fig. 1 to 3, the encapsulation layer 30 includes a first inorganic layer 31, a second inorganic layer 32, and a third inorganic layer 33 that are stacked. By such an arrangement, the encapsulation layer 30 has a relatively small thickness while having a relatively good water and oxygen blocking capability, so that the whole light-emitting device has a relatively small thickness.

Fig. 4 is a schematic diagram of another light-emitting device according to an embodiment of the present invention, and optionally, referring to fig. 4, the encapsulation layer includes a first inorganic layer 31, a second inorganic layer 32, a first inorganic layer 31, and a third inorganic layer 33, which are stacked.

Specifically, since the encapsulation layer 30 includes two first inorganic layers 31, the water and oxygen blocking capability of the encapsulation layer 30 is further improved, and since the first inorganic layer 31 is thinner, the increase of the thickness of the encapsulation layer 30 by the two first inorganic layers 31 is limited, and the whole light-emitting device can also be ensured to have a thinner thickness.

Fig. 5 is a schematic diagram of another light-emitting device provided by an embodiment of the present invention, and optionally, referring to fig. 5, the encapsulation layer includes a first inorganic layer 31, a second inorganic layer 32, and a third inorganic layer 33, which are stacked.

Specifically, the second inorganic layer 32 can play a role in buffering stress and blocking water and oxygen, the encapsulation layer 30 includes two first inorganic layers 31 and two second inorganic layers 32, the water and oxygen blocking capability of the encapsulation layer 30 is further improved, the second inorganic layers 32 are arranged between the two adjacent first inorganic layers 31 and between the adjacent first inorganic layers 31 and the adjacent third inorganic layers 33, the second inorganic layers 32 can better buffer stress between the first inorganic layers 31 and the third inorganic layers 33, and the encapsulation layer 30 has smaller stress.

Further, when the encapsulation layer 30 includes one first inorganic layer 31, one second inorganic layer 32, and one third inorganic layer 33, the thickness of the second inorganic layer 32 may range from 60nm to 3 μm, when the encapsulation layer 30 includes two first inorganic layers 31, one second inorganic layer 32, and one third inorganic layer 33, the thickness of the second inorganic layer 32 may range from 70nm to 5 μm, and when the encapsulation layer 30 includes two first inorganic layers 31, two second inorganic layers 32, and one third inorganic layer 33, the sum of the thicknesses of the two second inorganic layers 32 may range from 70nm to 5 μm.

In addition, when the encapsulation layer 30 includes two or more second inorganic layers 32, each second inorganic layer 32 may be disposed to cover the first inorganic layer 31 corresponding to the second inorganic layer 32; the first inorganic layer 31 corresponding to the second inorganic layer 32 is the first inorganic layer 31 adjacent to the second inorganic layer 32 and located on the substrate side of the second inorganic layer 32. It may also be arranged that the boundary of the vertical projection of each second inorganic layer 32 on the substrate 10 is located between the boundary of the vertical projection of its corresponding first inorganic layer 31 on the substrate 10 and the light emitting structure layer 20; it may be further provided that a portion of the second inorganic layer 32 is located between the boundary of the vertical projection of the substrate 10 and the light emitting structure layer 20 of the corresponding first inorganic layer 31, and a portion of the second inorganic layer 32 covers the corresponding first inorganic layer 31.

Optionally, the film stress of the encapsulation layer 30 is greater than or equal to-100 Mpa and less than or equal to 100Mpa, so that the encapsulation layer 30 has smaller stress, and the influence of cracks and the like on the water and oxygen blocking performance of the encapsulation layer 30 due to larger stress is avoided.

Specifically, the film stress of the encapsulation layer 30 can be calculated by the following formula:

wherein n is the total number of the film layers of the encapsulation layer 30, Ei is the elastic modulus of the ith film layer, C is the strain of the light-emitting device after the encapsulation layer 30 is prepared, α i is the linear expansion coefficient of the ith film layer, Δ T represents the temperature during film formation and the temperature during actual use, and Ti is the thickness of the ith film layer.

Illustratively, when the encapsulation layer 30 includes three layers of the first inorganic layer 31, the second inorganic layer 32, and the third inorganic layer 33, the encapsulation layer 30 satisfies: -100 MPa.ltoreq.E 1 (C-. alpha.1. DELTA.T) T1+ E2 (C-. alpha.2. DELTA.T) T2+ E3 (C-. alpha.3. DELTA.T) T3.ltoreq.100 MPa; where E1, E2, and E3 are elastic moduli of the first inorganic layer 31, the second inorganic layer 32, and the third inorganic layer 33, respectively, α 1, α 2, and α 3 are linear expansion coefficients of the first inorganic layer 31, the second inorganic layer 32, and the third inorganic layer 33, respectively, Δ T represents a temperature difference between a film formation time and an actual use time, and T1, T2, and T3 are thicknesses of the first inorganic layer 31, the second inorganic layer 32, and the third inorganic layer 33, respectively.

Optionally, the materials used for the first inorganic layer 31 and the third inorganic layer 33 each include at least one of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, and titanium oxide; the material used for the second inorganic layer 32 includes inorganic materials and

wherein the R1 radical is

The R2 radical being

And one or more of O, n is a positive integer greater than or equal to 1, x is H, SiH ₃ And NH ₂ One or more of; the inorganic material comprises at least one of silicon nitride, silicon oxide and silicon oxynitride.

Specifically, the first inorganic layer 31 and the third inorganic layer 33 may both include one or two or more of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, and titanium oxide, and the first inorganic layer 31 and the third inorganic layer 33 are made of the above materials, which have better water and oxygen barrier properties and lower material cost.

In addition, the second inorganic layer 32 is easily prepared to obtain a stable second inorganic layer 32 using the above materials.

It should be understood that various forms of the flows shown above may be used, with steps reordered, added, or deleted. For example, the steps described in the present invention may be executed in parallel, sequentially, or in different orders, and are not limited herein as long as the desired results of the technical solution of the present invention can be achieved.

The above-described embodiments should not be construed as limiting the scope of the invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made in accordance with design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A light-emitting device, comprising:

the first inorganic layer covers the light emitting structure layer, and the vertical projection of the second inorganic layer on the substrate at least covers the light emitting structure layer; the third inorganic layer covers the first inorganic layer in a perpendicular projection of the substrate.

2. The lighting device of claim 1, wherein:

3. The lighting device of claim 1, wherein:

the packaging layer further comprises a blocking adhesive layer and a blocking film layer, and the blocking film layer is arranged on one side of the blocking adhesive layer, which is far away from the substrate; the barrier adhesive layer covers the third inorganic layer; the barrier adhesive layer and the barrier film layer are used for blocking water and oxygen;

4. The lighting device according to claim 3, wherein:

the roughness of the surface of the third inorganic layer adjacent to the barrier glue layer is greater than or equal to 1nm and less than or equal to 50 nm.

5. The lighting device of claim 1, wherein:

the boundary of the vertical projection of the second inorganic layer on the substrate is a first boundary, the boundary of the vertical projection of the first inorganic layer adjacent to the second inorganic layer and positioned at one side of the second inorganic layer adjacent to the substrate is a second boundary, and the first boundary is positioned between the second boundary and the light emitting structure layer.

6. The lighting device according to claim 3, wherein:

the material adopted by the barrier adhesive layer comprises polyolefin or rubber, and the material adopted by the barrier adhesive layer also comprises a water-absorbing material;

7. The lighting device of claim 1, wherein:

the thickness of the first inorganic layer ranges from 10nm to 2 μm, and the thickness of the third inorganic layer ranges from 50 to 500 nm.

8. The lighting device of claim 1, wherein:

the encapsulation layer comprises a first inorganic layer, a second inorganic layer and a third inorganic layer which are arranged in a stacking way,

9. The lighting device of claim 1, wherein:

the film stress of the packaging layer is greater than or equal to-100 Mpa and less than or equal to 100 Mpa.

10. The lighting device of claim 1, wherein:

the first inorganic layer and the third inorganic layer are made of at least one of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide and titanium oxide.