CN115020444A - Fabric memristor with high stability and ultralow operating voltage and preparation method thereof - Google Patents

Fabric memristor with high stability and ultralow operating voltage and preparation method thereof Download PDF

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CN115020444A
CN115020444A CN202210544287.9A CN202210544287A CN115020444A CN 115020444 A CN115020444 A CN 115020444A CN 202210544287 A CN202210544287 A CN 202210544287A CN 115020444 A CN115020444 A CN 115020444A
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fabric
memristor
operating voltage
ultra
high stability
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陈培宁
周旭峰
彭慧胜
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Fudan University
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Fudan University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • D—TEXTILES; PAPER
    • D03—WEAVING
    • D03D—WOVEN FABRICS; METHODS OF WEAVING; LOOMS
    • D03D1/00—Woven fabrics designed to make specified articles
    • D03D1/0088—Fabrics having an electronic function
    • D—TEXTILES; PAPER
    • D03—WEAVING
    • D03D—WOVEN FABRICS; METHODS OF WEAVING; LOOMS
    • D03D15/00—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used
    • D03D15/20—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used characterised by the material of the fibres or filaments constituting the yarns or threads
    • D03D15/242—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used characterised by the material of the fibres or filaments constituting the yarns or threads inorganic, e.g. basalt
    • D03D15/25—Metal
    • D—TEXTILES; PAPER
    • D03—WEAVING
    • D03D—WOVEN FABRICS; METHODS OF WEAVING; LOOMS
    • D03D15/00—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used
    • D03D15/20—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used characterised by the material of the fibres or filaments constituting the yarns or threads
    • D03D15/242—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used characterised by the material of the fibres or filaments constituting the yarns or threads inorganic, e.g. basalt
    • D03D15/25—Metal
    • D03D15/258—Noble metal
    • D—TEXTILES; PAPER
    • D03—WEAVING
    • D03D—WOVEN FABRICS; METHODS OF WEAVING; LOOMS
    • D03D15/00—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used
    • D03D15/20—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used characterised by the material of the fibres or filaments constituting the yarns or threads
    • D03D15/283—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used characterised by the material of the fibres or filaments constituting the yarns or threads synthetic polymer-based, e.g. polyamide or polyester fibres
    • D—TEXTILES; PAPER
    • D03—WEAVING
    • D03D—WOVEN FABRICS; METHODS OF WEAVING; LOOMS
    • D03D15/00—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used
    • D03D15/40—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used characterised by the structure of the yarns or threads
    • D03D15/47—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used characterised by the structure of the yarns or threads multicomponent, e.g. blended yarns or threads
    • D—TEXTILES; PAPER
    • D03—WEAVING
    • D03D—WOVEN FABRICS; METHODS OF WEAVING; LOOMS
    • D03D15/00—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used
    • D03D15/50—Woven fabrics characterised by the material, structure or properties of the fibres, filaments, yarns, threads or other warp or weft elements used characterised by the properties of the yarns or threads
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06M—TREATMENT, NOT PROVIDED FOR ELSEWHERE IN CLASS D06, OF FIBRES, THREADS, YARNS, FABRICS, FEATHERS OR FIBROUS GOODS MADE FROM SUCH MATERIALS
    • D06M11/00—Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereof; Such treatment combined with mechanical treatment, e.g. mercerising
    • D06M11/51—Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereof; Such treatment combined with mechanical treatment, e.g. mercerising with sulfur, selenium, tellurium, polonium or compounds thereof
    • D06M11/53—Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereof; Such treatment combined with mechanical treatment, e.g. mercerising with sulfur, selenium, tellurium, polonium or compounds thereof with hydrogen sulfide or its salts; with polysulfides
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
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    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
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    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • D—TEXTILES; PAPER
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    • D10B—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
    • D10B2101/00—Inorganic fibres
    • D10B2101/20—Metallic fibres
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    • D10B—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
    • D10B2321/00—Fibres made from polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • D10B2321/10—Fibres made from polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds polymers of unsaturated nitriles, e.g. polyacrylonitrile, polyvinylidene cyanide
    • D—TEXTILES; PAPER
    • D10—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
    • D10B—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
    • D10B2331/00—Fibres made from polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds, e.g. polycondensation products
    • D10B2331/02—Fibres made from polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds, e.g. polycondensation products polyamides
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    • D10B2331/00—Fibres made from polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds, e.g. polycondensation products
    • D10B2331/02—Fibres made from polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds, e.g. polycondensation products polyamides
    • D10B2331/021—Fibres made from polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds, e.g. polycondensation products polyamides aromatic polyamides, e.g. aramides
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    • D10—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
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    • D10B2331/00—Fibres made from polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds, e.g. polycondensation products
    • D10B2331/04—Fibres made from polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds, e.g. polycondensation products polyesters, e.g. polyethylene terephthalate [PET]

Abstract

The invention relates to a fabric memristor with high stability and ultralow operating voltage and a preparation method thereof, wherein a resistance change active material film with a nanometer pore channel structure is prepared on the surface of a high-curvature fiber electrode by a chemical bath liquid deposition method, and a pore channel structure with the size of 0-200 nanometers and a uniform film with the thickness of 50-200 nanometers can be obtained by accurately regulating and controlling the components and reaction conditions of a precursor solution, so that a high-performance flexible resistance change composite fiber electrode is finally obtained. The functional unit of the fabric memristor shows ultra-low operating voltage, tiny voltage fluctuation, high-stability multi-resistance-state storage characteristics and the like. In addition, the constructed fabric memristor interweaving array shows 100% of device yield, lower writing voltage fluctuation and good bending stability, and lays a foundation for constructing a high-performance fabric information storage and processing system.

Description

Fabric memristor with high stability and ultralow operating voltage and preparation method thereof
Technical Field
The invention relates to the technical field of flexible wearable and semiconductor information correlation, in particular to a fabric memristor with high stability and ultralow operating voltage and a preparation method thereof.
Background
The rapid development of important emerging fields such as artificial intelligence, big data, Internet of things and the like provides new functional requirements for future intelligent electronic fabrics. The information storage and processing functions become core functions of the flexible intelligent electronic fabric system, and are the basis for constructing a full closed-loop system for realizing signal induction, transmission, logic feedback and instruction issuing. However, in the past reports, information storage and processing devices constructed based on rigid planar substrates were attached to fabric surfaces and connected to other fabric devices through complicated external circuit designs to form electronic fabric systems. However, as electronic fabrics are rapidly developed toward high integration, the volume of the block circuit system is increasingly large, the required circuit connection is also increasingly complex, and the application requirements of the intelligent electronic fabrics cannot be met. Meanwhile, a rigid block planar device is generally difficult to realize effective mechanical matching with a fabric, and is easy to damage a circuit connection interface and attenuate the performance of the device even lose the function in complex deformation environments such as stretching, compressing and twisting. Therefore, if a flexible information storage and processing device of a fiber or fabric can be developed through a brand-new device structure design, the organic integration of the flexible information storage and processing device, a fabric structure and a weaving method is realized, and the development requirements of integration and intellectualization of electronic fabrics in the future are effectively met.
The memristor has excellent information storage and processing characteristics, and has a device structure with two vertically stacked ends and a transversely-longitudinally staggered integrated architecture similar to a fabric. Therefore, the memristor is expected to be a basic unit for constructing a flexible information storage and processing system based on a fabric interweaving structure. Although memristors have many unique advantages in device structure and function, the following challenges are still faced to obtain high performance fabric memristors: firstly, a memristor functional layer is usually composed of a homogeneous material with a compact and randomly-packed structure, which causes a higher ion migration energy barrier and a tortuous ion migration path, thereby causing the memristor to show a higher operating voltage and a poorer cycling stability in performance; secondly, in a wearing application scene, the fiber electrode is randomly bent along with the fabric to cause instability of an interweaving interface, and instability of the device is aggravated.
In summary, poor stability and high operating voltage become bottleneck problems that limit the fabric memristor to be applied. Therefore, development of an oriented synthesis and assembly method of an active material suitable for the surface of a high-curvature fiber is urgently needed, and accurate design and regulation of an interface microstructure of an active layer on a fiber electrode are achieved, so that a fabric memristor with high stability and ultralow voltage is obtained.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a fabric memristor which can show 100% of device yield, lower writing voltage fluctuation and good bending stability, has high stability and ultra-low operating voltage, and a preparation method thereof.
The purpose of the invention can be realized by the following technical scheme:
a preparation method of a fabric memristor with high stability and ultra-low operating voltage comprises the following steps:
(1) depositing the precursor solution on the surface of the fiber electrode by adopting a chemical bath liquid phase deposition method to obtain a composite fiber electrode with a nano-pore structure resistance change active layer;
(2) the composite fiber electrode and the polymer fiber are used as warp threads, the silver wires and the polymer fiber are used as weft threads, and the fabric memristor with high stability and ultralow operating voltage is obtained through warp and weft weaving.
Further, the precursor solution comprises a component A and a component B; component A comprises zinc acetate dihydrate with a concentration of not more than 100mM, copper sulfate pentahydrate with a concentration of not more than 500mM and ethylenediaminetetraacetic acid disodium salt dihydrate with a concentration of not more than 19mM, and component B comprises thioacetamide with a concentration of not more than 1.0M. The formation of the nano-pore structure is determined by key material, namely, the dihydrate edetate is less than 19mM, and the nano-pore structure can be produced.
Further, the specific process of the step (1) is as follows:
s1: firstly, ultrasonically cleaning the fiber electrode, and then suspending and fixing the fiber electrode on the glass substrate.
S2: the substrate on which the fiber electrode is fixed is immersed into component a, followed by addition of component B, and reaction is stirred with heating.
S3: and ultrasonically cleaning the composite fiber electrode deposited with the active material, and heating and drying.
Further, the heating temperature is 40-80 ℃, the stirring speed is 200-2000rpm, and the reaction time is 30-120 min.
Further, the material of the resistive active layer is CuS, ZnS or CuZnS.
Further, the film thickness of the resistive active layer is 50-200nm, and the pore size of the nanometer pore channel is less than 200 nm.
Furthermore, the fiber electrode is a platinum wire, a silver wire, a gold wire, an aluminum wire or an iron wire, and the diameter of the fiber electrode is 10-200 mu m.
Further, the polymer fiber is polyester fiber, aramid fiber, polyamide fiber or acrylic fiber, and the diameter of the polymer fiber is 10-200 mu m.
Further, the diameter of the silver wire is 50-100 μm.
A fabric memristor with high stability and ultra-low operating voltage prepared by the method is disclosed.
Compared with the prior art, the invention has the following advantages:
(1) based on a chemical bath liquid phase deposition method, a resistive active thin layer with a nano-pore structure can be uniformly deposited on the surface of a high-curvature fiber electrode by adjusting the proportion of a precursor solution and the reaction conditions, and the size (0-200 nm) of the nano-pore and the thickness (50-200 nm) of the resistive active thin layer can be accurately regulated and controlled;
(2) the fabric memristor unit constructed by a simple warp and weft weaving method shows ultralow operating voltage (0.089V), tiny operating voltage fluctuation (less than 5.6 percent) and high-stability multi-resistance storage characteristics;
(3) the fabric memristor array constructed exhibited 100% device yield, lower write voltage fluctuation (< 10%), and good bending stability.
Drawings
FIG. 1 is a schematic diagram of a fabric memristor and functional unit in the present invention;
FIG. 2 is a schematic illustration of a chemical bath liquid deposition process and precursor solution composition in accordance with the present invention;
FIG. 3 is an electron micrograph of CuZnS thin films of different nanopore structures of examples 1-3;
FIG. 4 is an electrical property characterization of a CuZnS fabric memristor element in examples 1-3;
FIG. 5 is an electrical characteristic and bending stability characterization of a 5 × 5 fabric memristor array in example 2;
fig. 6 is a schematic view of ion migration.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments. The present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a specific operation process are given, but the protection scope of the present invention is not limited to the following embodiments.
A method for preparing a fabric memristor with high stability and ultra-low operating voltage, referring to fig. 1-2, the method comprises the following steps:
(1) depositing the precursor solution on the surface of the fiber electrode by adopting a chemical bath liquid phase deposition method to obtain a composite fiber electrode with a nano-pore structure resistance change active layer; the material of the resistive active layer is CuS, ZnS or CuZnS. The film thickness of the resistive active layer is 50-200nm, and the pore size of the nanometer pore channel is less than 200 nm. The precursor solution comprises a component A and a component B; component A comprises zinc acetate dihydrate with a concentration of not more than 100mM, copper sulfate pentahydrate with a concentration of not more than 500mM and ethylenediaminetetraacetic acid disodium salt dihydrate with a concentration of not more than 19mM, and component B comprises thioacetamide with a concentration of not more than 1.0M.
S1: firstly, ultrasonically cleaning the fiber electrode, and then suspending and fixing the fiber electrode on the glass substrate. The fiber electrode is made of platinum wire, silver wire, gold wire, aluminum wire or iron wire, and the diameter is 10-200 μm.
S2: the substrate on which the fiber electrode is fixed is immersed into component a, followed by addition of component B, and reaction is stirred with heating. The heating temperature is 40-80 ℃, the stirring speed is 200-2000rpm, and the reaction time is 30-120 min.
S3: and ultrasonically cleaning the composite fiber electrode deposited with the active material, and heating and drying.
(2) The composite fiber electrode and the polymer fiber are used as warp threads, the silver wires and the polymer fiber are used as weft threads, and the fabric memristor with high stability and ultralow operating voltage is obtained through warp and weft weaving. The polymer fiber is polyester fiber, aramid fiber, polyamide fiber or acrylic fiber, and has a diameter of 10-200 μm. The diameter of the silver wire is 50-100 μm.
In the invention, the room temperature means that the ambient temperature is 10-30 ℃.
The reagents used in the following examples are all purchased from outsourced reagents, wherein various solvents are purchased from pharmaceutical chemicals, ltd. In the examples the various devices were purchased from commercial equipment.
Example 1:
a fabric memristor and a preparation method thereof are disclosed, and the method comprises the following steps:
(1) the composite fiber electrode is prepared by depositing a CuZnS film without a nano-pore structure on the surface of the fiber electrode by adopting a chemical bath liquid phase deposition method (figure 2): 5 platinum wires of 50 μm diameter were ultrasonically cleaned in sequence with acetone, isopropanol, and deionized water, and then fixed on a glass substrate (5 cm wide by 10 cm long) at 5mm intervals. The glass substrate with the platinum wire fixed thereto was put into the precursor aqueous solution a (75 ml), followed by adding the precursor aqueous solution B (25 ml), and heated and stirred at 500 revolutions per minute at 80 degrees celsius for one hour. Finally, a thin film of CuZnS without a nanoporous structure was deposited on the surface of a platinum wire (fig. 3a, 3b) to obtain a CuZnS/Pt composite fiber electrode, which was ultrasonically cleaned and dried at 80 degrees celsius for one hour. Wherein solution A contains 10.0mM of copper sulfate pentahydrate, 65mM of zinc acetate dihydrate and 20.0mM of disodium ethylenediaminetetraacetate dihydrate. Solution B contained 200mM thioacetamide.
(2) Preparing a CuZnS fabric memristor without a nano-channel structure: and (2) taking the CuZnS/Pt composite fiber electrode obtained in the step (1) and cotton threads with the diameter of 100 microns as warps, and weaving the silver threads with the diameter of 50 microns and the cotton threads with the diameter of 100 microns by warps and wefts to obtain the CuZnS fabric memristor without a nano-channel structure. The average operating voltage of the fabric memristor constructed was 0.380V, and the standard deviation of the voltage was 0.213V (fig. 4 b).
Example 2:
a preparation method of a fabric memristor with high stability and ultra-low operating voltage comprises the following steps:
(1) depositing a CuZnS film with a 17-nanometer pore channel structure on the surface of the fiber electrode by adopting a chemical bath liquid phase deposition method to prepare the composite fiber electrode (figure 2): 5 platinum wires of 100 μm diameter were ultrasonically cleaned in sequence with acetone, isopropanol, and deionized water, and then fixed on a glass substrate (5 cm wide by 10 cm long) at 5mm intervals. The glass substrate with the platinum wire fixed thereto was put into the precursor aqueous solution a (75 ml), followed by adding the precursor aqueous solution B (25 ml), and heated and stirred at 800 rpm at 70 degrees celsius for half an hour. Finally, a CuZnS film with a 17-nanometer pore channel structure is deposited on the surface of a platinum wire (figures 3c and 3d) to obtain a CuZnS/Pt composite fiber electrode, and the composite fiber electrode is ultrasonically cleaned and dried at 80 ℃ for one hour. Wherein solution A contained 5.0mM of copper sulfate pentahydrate, 61.7mM of zinc acetate dihydrate and 18.7mM of disodium ethylenediaminetetraacetate dihydrate. Solution B contained 160mM thioacetamide.
(2) Preparing a CuZnS fabric memristor with a 17-nanometer-sized channel structure: and (2) taking the CuZnS/Pt composite fiber electrode obtained in the step (1) and a cotton thread with the diameter of 150 microns as warps, and weaving the silver thread with the diameter of 100 microns and the cotton thread with the diameter of 150 microns by warps and wefts to obtain the CuZnS fabric memristor without a nano-channel structure. The constructed fabric memristor exhibited ultra-low average operating voltage of 0.089V, a slight standard deviation of voltage of 0.005V, slight voltage fluctuations of less than 5.6%, and resistive memory characteristics of 5 resistive states (fig. 4a and c). In addition, the constructed 5 × 5 fabric memristor array exhibited 100% device yield, lower write voltage fluctuation (< 10%), and good bending stability (fig. 5).
Example 3:
a preparation method of a fabric memristor with high stability and ultra-low operating voltage comprises the following steps:
(1) the CuZnS film with a pore channel structure with the size of 50 nanometers is deposited on the surface of the fiber electrode by adopting a chemical bath liquid phase deposition method so as to prepare the composite fiber electrode (figure 2): 5 platinum wires of 25 μm diameter were ultrasonically cleaned with acetone, isopropanol, and deionized water in this order, and then fixed on a glass substrate (5 cm wide and 10 cm long) at 5mm intervals. The glass substrate with the platinum wire fixed thereto was put into the precursor aqueous solution a (75 ml), followed by adding the precursor aqueous solution B (25 ml), and heated and stirred at 1000 revolutions per minute at 60 degrees celsius for one hour. Finally, a CuZnS film with a pore channel structure of 50 nanometers is deposited on the surface of a platinum wire (FIGS. 3e and 3f) to obtain a CuZnS/Pt composite fiber electrode, and the composite fiber electrode is ultrasonically cleaned and dried at 80 ℃ for one hour. Wherein solution A contains 20.0mM of copper sulfate pentahydrate, 40mM of zinc acetate dihydrate and 15.0mM of disodium ethylenediaminetetraacetate dihydrate. Solution B contained 200mM thioacetamide.
(2) Preparing a CuZnS fabric memristor with a 50-nanometer-sized channel structure: and (2) taking the CuZnS/Pt composite fiber electrode obtained in the step (1) and cotton threads with the diameter of 100 microns as warps, and weaving the silver threads with the diameter of 50 microns and the cotton threads with the diameter of 100 microns by warps and wefts to obtain the CuZnS fabric memristor with a 50-nanometer-sized channel structure.
FIG. 3 is an electron microscope photograph of CuZnS thin films with different nanopore structures. Wherein, a and b are CuZnS films without a nano-pore structure. c and d are CuZnS films with 17-nanometer-size pore channel structures. e and f are CuZnS films with 50-nanometer-size pore channel structures.
FIG. 4 is an electrical property characterization of a CuZnS fabric memristor cell. Wherein a is a current-voltage characteristic curve of the CuZnS memristor unit with the nanometer pore structure under 50 cycles. b is a current-voltage characteristic curve of the CuZnS memristor unit without the nano-pore structure under 50 cycles. And c is the multi-resistance state storage characteristic of the CuZnS memristor unit with the nanometer pore structure.
Fig. 5 is an electrical characteristic and bending stability characterization of a 5 x 5 fabric memristor array. Wherein a is a schematic diagram of the fabric memristor array before and after bending. b is an operating voltage distribution diagram of the fabric memristor array before bending. And c is an operating voltage distribution diagram of the fabric memristor array after bending.
In the present invention, the operating voltage and stability of the memristor are generally determined by the ion mobility and the conductive filament formation process. The CuZnS thin film without a nano-pore structure is a homogeneous material with a compact and random packing structure, and can cause a higher ion migration energy barrier and a tortuous ion migration path. The nano-pore with the uniform and oriented structure can provide a fixed and shortest path for ion migration, and the loose amorphous area on the inner surface of the nano-pore provides a fast and high-density ion transmission rate. And the peripheral dense crystalline region plays a role in inhibiting ion diffusion and confining the ion diffusion in the pore channel. The design of the nanopore with the oriented heterostructure enables ions to be rapidly and efficiently transmitted only inside the nanopore, so that the memristor with the structure has an ultra-low writing voltage and stable resistance transition performance, as shown in fig. 6.
Therefore, the resistance change active material film with the nanometer pore channel structure is prepared on the surface of the high-curvature fiber electrode through a chemical bath liquid phase deposition method, the pore channel structure with the size of 0-200 nanometers and the uniform film with the thickness of 50-200 nanometers can be obtained through accurately regulating and controlling the components and reaction conditions of the precursor solution, and finally the high-performance flexible resistance change composite fiber electrode is obtained. The composite fiber electrode and the other fiber electrode are woven in a warp-weft mode to obtain the fabric memristor, each interweaving point is a functional unit, and the fabric memristor can be used for information storage and processing. The fabric memristor functional unit shows ultra-low operation voltage (0.089V), tiny voltage fluctuation (< 5.6%), high-stability multi-resistance-state storage characteristics and the like. In addition, the constructed fabric memristor interweaving array shows 100% of device yield, lower writing voltage fluctuation (< 10%) and good bending stability, and lays a foundation for constructing a high-performance fabric information storage and processing system.
The foregoing is directed to preferred embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow. However, any simple modification, equivalent change and modification of the above embodiments according to the technical essence of the present invention are within the protection scope of the technical solution of the present invention.

Claims (10)

1. A preparation method of a fabric memristor with high stability and ultra-low operating voltage is characterized by comprising the following steps:
(1) depositing the precursor solution on the surface of the fiber electrode by adopting a chemical bath liquid phase deposition method to obtain a composite fiber electrode with a nano-pore structure resistance change active layer;
(2) the composite fiber electrode and the polymer fiber are used as warp threads, the silver wires and the polymer fiber are used as weft threads, and the fabric memristor with high stability and ultralow operating voltage is obtained through warp and weft weaving.
2. The method for preparing a high-stability and ultra-low operating voltage fabric memristor according to claim 1, wherein the precursor solution comprises a component A and a component B;
component A comprises zinc acetate dihydrate with a concentration of not more than 100mM, copper sulfate pentahydrate with a concentration of not more than 500mM and ethylenediaminetetraacetic acid disodium salt dihydrate with a concentration of not more than 19mM, and component B comprises thioacetamide with a concentration of not more than 1.0M.
3. The preparation method of the fabric memristor with high stability and ultra-low operating voltage according to claim 2, wherein the specific flow of the step (1) is as follows:
s1: firstly, ultrasonically cleaning the fiber electrode, and then suspending and fixing the fiber electrode on the glass substrate.
S2: the substrate on which the fiber electrode is fixed is immersed into component a, followed by addition of component B, and reaction is stirred with heating.
S3: and ultrasonically cleaning the composite fiber electrode deposited with the active material, and heating and drying.
4. The preparation method of the fabric memristor with high stability and ultralow operating voltage as claimed in claim 3, wherein the heating temperature is 40-80 ℃, the stirring speed is 200-2000rpm, and the reaction time is 30-120 min.
5. The method for preparing a fabric memristor with high stability and ultra-low operating voltage according to claim 1, wherein the material of the resistive switching active layer is CuS, ZnS or CuZnS.
6. The preparation method of the fabric memristor with high stability and ultra-low operating voltage according to claim 1, wherein the film thickness of the resistive switching active layer is 50-200nm, and the pore size of a nanometer pore is smaller than 200 nm.
7. The method for preparing a fabric memristor with high stability and ultra-low operating voltage according to claim 1, wherein the fiber electrode is platinum wire, silver wire, gold wire, aluminum wire or iron wire, and the diameter is 10-200 μm.
8. The method for preparing a fabric memristor with high stability and ultra-low operating voltage according to claim 1, wherein the polymer fiber is polyester fiber, aramid fiber, polyamide fiber or acrylic fiber, and the diameter is 10-200 μm.
9. The method for preparing a high-stability and ultra-low operating voltage fabric memristor according to claim 1, wherein the diameter of the silver wire is 50-100 μm.
10. A high stability and ultra-low operating voltage fabric memristor made by the method of any of claims 1-9.
CN202210544287.9A 2022-05-18 2022-05-18 Fabric memristor with high stability and ultralow operating voltage and preparation method thereof Pending CN115020444A (en)

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