CN115020436A - Wafer bonding method and method for forming backside illuminated image sensor - Google Patents

Wafer bonding method and method for forming backside illuminated image sensor Download PDF

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Publication number
CN115020436A
CN115020436A CN202210850573.8A CN202210850573A CN115020436A CN 115020436 A CN115020436 A CN 115020436A CN 202210850573 A CN202210850573 A CN 202210850573A CN 115020436 A CN115020436 A CN 115020436A
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wafer
bonding
layer
bonding layer
device wafer
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陶磊
郭育清
张燚
王厚有
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Nexchip Semiconductor Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention provides a wafer bonding method and a forming method of a back-illuminated image sensor, wherein the wafer bonding method comprises the following steps: providing a wafer bonding structure, wherein the wafer bonding structure comprises a device wafer and a bearing wafer, the device wafer comprises a first substrate and a first bonding layer positioned on the first substrate, the bearing wafer comprises a second substrate and a second bonding layer positioned on the second substrate, and the first bonding layer is bonded with the second bonding layer; checking the bubbles in the wafer bonding structure and judging whether the bubbles are qualified or not; if not, performing bonding removal processing on the wafer bonding structure to obtain a separated device wafer and a separated bearing wafer; removing a surface layer portion of the first bonding layer; and re-bonding the device wafer and the bearing wafer. In the rework flow, by removing the surface layer portion having a higher water content in the first bonding layer, bubbles after re-bonding are reduced, and a flat bonding surface is obtained.

Description

Wafer bonding method and method for forming backside illuminated image sensor
Technical Field
The present invention relates to the field of semiconductor technology, and more particularly, to a wafer bonding method and a method for forming a backside illuminated image sensor.
Background
The CMOS image sensor may be classified into a front-illuminated image sensor and a back-illuminated image sensor according to a position to receive light. Compared with the front-illuminated image sensor, the back-illuminated image sensor has the greatest optimization that the structure inside the element is changed, namely the incident light path of the element of the photosensitive layer is turned, so that light can enter the back from the direct incidence, the influence of the structure and the thickness between the micro lens and the photodiode on the light in the front-illuminated image sensor is avoided, and the light receiving efficiency is improved.
In the manufacturing process of the back side illumination type image sensor, the front side of a device wafer with a pattern formed inside and a carrier wafer are subjected to wafer bonding, if bubbles are detected to exceed the specification, a wafer bonding structure needs to be reworked, but the problem of insufficient bonding force is caused.
Disclosure of Invention
The invention aims to provide a wafer bonding method to solve the problem that the bonding force of a wafer bonding structure which is bonded again is insufficient after the wafer bonding structure is reworked.
To solve the above technical problem, the present invention provides a wafer bonding method, including:
providing a wafer bonding structure, wherein the wafer bonding structure comprises a device wafer and a bearing wafer, the device wafer comprises a first substrate and a first bonding layer positioned on the first substrate, the bearing wafer comprises a second substrate and a second bonding layer positioned on the second substrate, and the first bonding layer is bonded with the second bonding layer;
performing bubble inspection on the wafer bonding structure, and judging whether bubbles are qualified or not; and if the wafer bonding structure is unqualified, performing bonding removal treatment on the wafer bonding structure to obtain a device wafer and a carrier wafer which are separated, removing the surface layer part of the first bonding layer, and then re-bonding the device wafer and the carrier wafer.
Optionally, a chemical mechanical polishing process is used to remove a surface layer portion of the first bonding layer.
Optionally, the thickness of the surface layer part of the first bonding layer is removed is 180-220 angstroms.
Optionally, after the wafer bonding structure is subjected to the debonding process and before the device wafer and the carrier wafer are re-bonded, the roughness and the curvature of the device wafer and the carrier wafer are inspected.
Optionally, after the device wafer and the carrier wafer are bonded again, the wafer bonding structure is subjected to bubble inspection.
Optionally, the first bonding layer is an oxide layer.
Optionally, a PECVD process is used to form the first bonding layer.
Optionally, the second bonding layer is an oxide layer.
Optionally, the second bonding layer is formed by a thermal oxidation process.
Based on the same inventive concept, the invention also provides a forming method of the back-illuminated image sensor, which comprises the step of bonding by using the wafer bonding method.
In the wafer bonding method provided by the invention, whether bubbles of a wafer bonding structure are qualified or not is checked, if not, before re-bonding, a surface layer part of a first bonding layer of a device wafer is removed, so that a layer of water molecules on the surface of the first bonding layer in the device wafer is reduced, because when the device wafer and the bearing wafer are heated, water vapor is generated between the two wafers, when the two wafers are directly and comprehensively attached and subjected to pressure bonding, the water vapor cannot be discharged in time, and when the temperature of the two wafers is reduced, a bubble defect is left between the two wafers; therefore, in the rework process, by removing the thickness of the surface layer part of the first bonding layer, a layer of water molecules on the surface of the first bonding layer of the device wafer is reduced, air bubbles after re-bonding are reduced, and the bonding force of the re-bonded wafer bonding structure is improved; when the debonding is performed, the surface state of the first bonding layer of the device wafer may be damaged, a dangling bond is generated, a part of the thickness of the surface of the first bonding layer is removed, the damaged surface state is removed, a flat bonding surface is obtained, the bonding force of the rebonded wafer bonding structure is improved, and therefore the problem that the bonding force of the rebonded wafer bonding structure is insufficient after the wafer bonding structure is reworked can be solved.
Drawings
Fig. 1 is a flowchart of a wafer bonding method according to an embodiment of the invention.
Fig. 2 is a schematic diagram of a first bonding layer formed on a device wafer according to an embodiment of the invention.
Fig. 3 is a schematic diagram of a structure of forming a second bonding layer on a carrier wafer according to an embodiment of the invention.
FIG. 4 is a schematic structural diagram of a device wafer undergoing a plasma activation process according to an embodiment of the invention.
FIG. 5 is a schematic diagram of a structure for forming dangling bonds in a plasma activation process according to an embodiment of the present invention.
FIG. 6 is a schematic diagram illustrating the structure of the example of the present invention for making DIW surface hydrophilic.
Fig. 7 is a schematic structural diagram of a carrier wafer bonded to a device wafer according to an embodiment of the present invention.
Fig. 8 is a schematic diagram of chemical bonds after bonding the carrier wafer and the device wafer according to an embodiment of the invention.
Fig. 9 is a schematic structural diagram of a wafer bonding structure after debonding according to an embodiment of the present invention.
Fig. 10 is a schematic diagram of a wafer bonding structure according to an embodiment of the present invention after re-bonding.
In the figure, the position of the upper end of the main shaft,
10-a device wafer; 11-a first substrate; 12-a first bonding layer; 20-carrying the wafer; 21-a second substrate; 22-a second bonding layer.
Detailed Description
The wafer bonding method proposed by the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is provided for the purpose of facilitating and clearly illustrating embodiments of the present invention.
The inventor researches and finds that in the manufacturing process of the back-illuminated image sensor, the front surface of a device wafer with a pattern formed inside and a bearing wafer are bonded with the wafer, if bubbles are detected to exceed the specification, the bonded wafer needs to be reworked, but the bonded structure of the wafer bonded with the bonding force is insufficient.
Based on the method, the invention provides a novel wafer bonding method, whether bubbles in a wafer bonding structure are qualified or not is checked, and if the bubbles are not qualified, the surface layer part of the first bonding layer of the device wafer is removed before re-bonding is carried out, so that water molecules in a surface layer in the first bonding layer in the device wafer are reduced. The reason is that when the device wafer and the bearing wafer are heated, water vapor is generated between the two wafers, the water vapor cannot be discharged in time when the two wafers are directly and comprehensively attached and are subjected to pressure bonding, and when the temperature of the two wafers is reduced, a bubble defect is left between the two wafers, so that in a rework process, by removing the thickness of the surface layer part of the first bonding layer, a layer of water molecules on the surface of the first bonding layer of the device wafer is reduced, bubbles after re-bonding are reduced, and the bonding force of the wafer bonding structure after re-bonding is improved; when the debonding is performed, the surface state of the first bonding layer of the device wafer may be damaged, a dangling bond is generated, a part of the thickness of the surface of the first bonding layer is removed, the damaged surface state is removed, a flat bonding surface is obtained, the bonding force of the rebonded wafer bonding structure is improved, and therefore the problem that the bonding force of the rebonded wafer bonding structure is insufficient after the wafer bonding structure is reworked can be solved.
Specifically, please refer to fig. 1, which is a flowchart illustrating a wafer bonding method according to an embodiment of the present invention; as shown in fig. 1, the present invention provides a wafer bonding method, including:
step S10, providing a wafer bonding structure, where the wafer bonding structure includes a device wafer and a carrier wafer, the device wafer includes a first substrate and a first bonding layer located on the first substrate, the carrier wafer includes a second substrate and a second bonding layer located on the second substrate, and the first bonding layer is bonded to the second bonding layer;
step S20, performing bubble inspection on the wafer bonding structure and judging whether bubbles are qualified or not;
step S30, if the wafer bonding structure is unqualified, performing de-bonding processing on the wafer bonding structure to obtain a device wafer and a carrier wafer which are separated;
step S40, removing a surface layer portion of the first bonding layer;
step S50, re-bonding the device wafer and the carrier wafer.
The wafer bonding method according to the embodiment of the invention is described in detail below with reference to fig. 2 to 10.
Referring to fig. 2 and fig. 8, in step S10, a wafer bonding structure is provided, where the wafer bonding structure includes a device wafer 10 and a handle wafer 20, the device wafer 10 includes a first substrate 11 and a first bonding layer 12 located on the first substrate, the handle wafer 20 includes a second substrate 21 and a second bonding layer 22 located on the second substrate, and the first bonding layer 12 is bonded to the second bonding layer 22.
Specifically, the process of forming the wafer bonding structure includes the steps of:
in step S11, referring to fig. 2, a first bonding layer 12 is formed on the first substrate 11, and the first bonding layer 12 may be formed by a Chemical Vapor Deposition (CVD) process, such as a PECVD process. The first bonding layer 12 is, for example, an oxide layer, and the oxide layer is used as a bonding layer, so that the bonding force can be improved. In this embodiment, the first bonding layer 12 is deposited using a low power PETEOS process, which is a dielectric layer process used as an intermetallic in PECVD and has material sources including TEOS and O 2 The material source enters the vacuum process cavity in the form of gas, and under the condition of specific vacuum pressure and Radio Frequency (RF) power, the reaction gases (TEOS and O) 2 ) Activation energy is obtained from glow discharge (plasma field), and chemical reaction is activated and enhanced, thereby realizing chemical vapor deposition. The power of the PETEOS process is, for example, 300W-400W, and the thickness of the first bonding layer 12 is, for example, 16000 angstroms-20000 angstroms.
Step S12, an annealing process is performed on the first bonding layer 12 to remove moisture in the first bonding layer 12.The gas of the annealing process is, for example, N 2 . The process gas of the annealing process is, for example, hydrogen, and the process temperature of the annealing process is, for example, 350 ℃ to 450 ℃.
Step S13, removing a portion of the thickness of the first bonding layer 12. Because the first bonding layer 12 is formed by PECVD deposition, the first bonding layer 12 has loose texture and more internal water content, water vapor is generated between the two wafers when the device wafer 10 and the carrier wafer 20 are heated, the water vapor cannot be discharged in time when the two wafers are directly and comprehensively attached and subjected to pressure bonding, and after the temperature of the two wafers is reduced, a bubble defect is left between the two wafers, so that the part of the first bonding layer 12 on the surface layer with higher water content needs to be removed. In this embodiment, a chemical mechanical polishing process is used to remove a portion of the first bonding layer 12, a thickness of the removed portion of the first bonding layer 12 is, for example, 5000 angstroms to 7000 angstroms, and a remaining thickness of the first bonding layer 12 is, for example, 11000 angstroms to 13000 angstroms.
In specific implementation, the first bonding layer 12 of the device wafer 10 may be formed through one cycle of steps S11 to S13, and the first bonding layer 12 of the device wafer 10 may also be formed through multiple cycles of steps S11 to S13, that is, the first bonding layer 12 with a certain thickness is formed first, an annealing process is performed, a portion of the surface layer of the first bonding layer 12 with a higher water content is removed, then the first bonding layer 12 with a certain thickness is formed again, an annealing process is performed, and a portion of the surface layer of the first bonding layer 12 with a higher water content is removed, so that the first bonding layer 12 with a lower water content may be obtained, and bubbles may be reduced during bonding.
In step S14, please refer to fig. 3, a second bonding layer 22 is formed on the second substrate 21. The second bonding layer 22 is, for example, an oxide layer, in this embodiment, a thermal oxidation process is used to form the second bonding layer 22, and a thickness of the second bonding layer 22 is, for example, 180 angstroms to 220 angstroms. Next, a patterned photoresist (not shown) may be formed on the second bonding layer 22, and the second bonding layer 22 is dry-etched using the patterned photoresist as a mask to form an alignment mark (not shown) on the second bonding layer 22.
Step S15, please refer to fig. 4, in which a plasma activation process is performed on the first bonding layer 12 of the device wafer and the second bonding layer 22 of the carrier wafer, where the power of the plasma activation process is, for example, greater than 0 and less than 200W, please refer to fig. 5, which is a schematic structural diagram of the plasma activation process of the device wafer, and a dangling bond on the surface of the first bonding layer 12 is formed by the plasma activation process. Similarly, a dangling bond is formed on the surface of the second bonding layer 22 by performing a plasma activation process.
In step S16, a Deionized water cleaning (Deionized water cleaning) process is performed on the device wafer 10 and the carrier wafer 20. The water flow rate in the deionized water cleaning process is, for example, 100ml/min to 1000 ml/min. As shown in fig. 6, after deionized water cleaning, the surface of the first bonding layer 11 is hydrophilized, and the dangling bond on the surface of the first bonding layer 11 is repaired.
Step S17, referring to fig. 7, the device wafer 10 and the carrier wafer 20 are placed in a bonding machine, the alignment marks of the device wafer 10 and the carrier wafer 20 are aligned, and then pressure is applied to the carrier wafer 20 to bond the device wafer 10 and the carrier wafer 20, so as to form a wafer bonding structure. Preferably, applying pressure to the handle wafer 20, rather than to the device wafer 10, prevents damage to the device wafer 20. The pressure applied to the carrier wafer 20 is, for example, greater than 0mN and less than 3000 mN. Chemical bonding of the wafer bonding structure as shown in fig. 8, the chemical bond of the first bonding layer 12 and the chemical bond of the second bonding layer 22 are bonded together. In the manufacturing process of the backside illuminated image sensor, the first substrate of the device wafer needs to be thinned, and the pressure applied to the carrier wafer 20 is, for example, greater than 0mN and less than 3000 mN. Therefore, it is necessary to bond the device wafer 10 and the carrier wafer 20, and the carrier wafer 20 is used to support the device wafer 10 when the device wafer 10 is subjected to substrate thinning.
In step S20, a bubble check is performed on the wafer bonding structure to determine whether the bubble is acceptable. In this embodiment, the qualification criteria for the bubble inspection are: the size of the bubbles is less than 2mm and the number of the bubbles is less than 1000, or the size of the bubbles is more than 2mm and the number of the bubbles is 0. If the bubble check is qualified, step S21 is performed to thin the first substrate 11 of the device wafer. If the bubble check fails, step S30 is executed.
Referring to fig. 9, in step S30, if the size or the number of the bubbles is not qualified, the wafer bonding structure is debonded to obtain a separated device wafer 10 and a carrier wafer. In this embodiment, the wafer bonding structure is placed in a debonding tool for debonding, and the debonding tool and the bonding tool may be the same tool.
In a preferred scheme, after the wafer bonding structure is subjected to the debonding treatment, the roughness and the bending degree of the device wafer and the carrier wafer need to be checked. The qualified standard of the bending degree of the device wafer and the bearing wafer is 30-100 mu m, and the qualified standard of the roughness of the device wafer and the bearing wafer is 0.3-1.0 nm. And if the roughness and the curvature of the device wafer and the bearing wafer meet the qualified standards, carrying out chemical mechanical polishing process treatment, and if the roughness and the curvature of the device wafer and the bearing wafer do not meet the qualified standards, further treating the device wafer and the bearing wafer so as to enable the roughness and the curvature of the device wafer and the bearing wafer to meet the qualified standards.
In step S40, a surface layer portion of the first bonding layer is removed. In this embodiment, a chemical mechanical polishing process is used to remove a surface layer portion of the first bonding layer 12. Optionally, the thickness of the surface layer part of the first bonding layer is removed, for example, 180 angstroms to 220 angstroms. When the device wafer 10 and the carrier wafer 20 are heated, water vapor is generated between the two wafers, and when the two wafers are directly and comprehensively attached and pressed and bonded, the water vapor cannot be discharged in time, and when the temperatures of the two wafers are reduced, a bubble defect is left between the two wafers; moreover, the first bonding layer 12 is formed by a PECVD process, the first bonding layer 12 has a loose texture and a high internal water content, and particularly the top of the first bonding layer 12 has a high water content, so that in a rework process, a part with a high surface water content of the first bonding layer 12 is removed by a chemical mechanical polishing process, moisture in the first bonding layer is reduced, bubbles after re-bonding are reduced, and a bonding force of a re-bonded wafer bonding structure is improved; when the debonding is carried out, the surface state of the first bonding layer of the device wafer may be damaged to generate a dangling bond, and the damaged surface of the first bonding layer is removed by a chemical mechanical polishing process to obtain a flat bonding surface, so that the bonding force of the bonded structure of the wafer to be rebonded is improved, and the product rejection rate of the wafer to be rebonded is reduced.
In a preferred scheme, before wafer re-bonding, the roughness and the bending degree of the device wafer and the bearing wafer are also checked. The qualified standard of the bending degree of the device wafer and the bearing wafer is 30-100 mu m, and the qualified standard of the roughness of the device wafer and the bearing wafer is 0.3-1.0 nm. And performing a re-bonding process after the bending degree and the roughness of the device wafer 10 and the carrier wafer 20 meet qualified standards.
Referring to fig. 10, in step S50, the device wafer 10 and the carrier wafer 20 are rebonded. And bonding the device wafer 10 and the carrier wafer 20 by applying pressure to the carrier wafer in a bonding machine. It will be appreciated that disposing the handle wafer 20 above the device wafer 10 and applying pressure to the handle wafer advantageously protects the device wafer 10 from damage.
Preferably, after the device wafer and the carrier wafer are bonded again, the wafer bonding structure is subjected to bubble inspection.
The present embodiment also provides a method for forming a backside illuminated image sensor, including: and bonding by adopting the wafer bonding method. And thinning the substrate of the device wafer after the wafer bonding and the bubble inspection are qualified.
In summary, in the wafer bonding method provided by the embodiment of the present invention, a wafer bonding structure is provided, whether bubbles of the wafer bonding structure are qualified or not is checked, and if the bubbles of the wafer bonding structure are not qualified, the surface layer part of the first bonding layer of the device wafer is removed before re-bonding, so that water molecules on one layer of the surface in the first bonding layer of the device wafer are reduced; therefore, in the rework process, by removing the thickness of the surface layer part of the first bonding layer, a layer of water molecules on the surface of the first bonding layer of the device wafer is reduced, air bubbles after re-bonding are reduced, and the bonding force of the re-bonded wafer bonding structure is improved; when the debonding is carried out, the surface state of the first bonding layer of the device wafer may be damaged, a dangling bond is generated, part of the thickness of the surface of the first bonding layer is removed, the damaged surface state is removed, a flat bonding surface is obtained, and the bonding force of the rebonded wafer bonding structure is improved, so that the problem that the bonding force of the rebonded wafer bonding structure is insufficient after the wafer bonding structure is reworked can be solved, and the product rejection rate of the rebonded wafer is reduced.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.

Claims (10)

1. A wafer bonding method, comprising:
providing a wafer bonding structure, wherein the wafer bonding structure comprises a device wafer and a bearing wafer, the device wafer comprises a first substrate and a first bonding layer positioned on the first substrate, the bearing wafer comprises a second substrate and a second bonding layer positioned on the second substrate, and the first bonding layer is bonded with the second bonding layer;
carrying out bubble inspection on the wafer bonding structure and judging whether bubbles are qualified or not; and if the wafer bonding structure is not qualified, performing bonding removal treatment on the wafer bonding structure to obtain a device wafer and a carrier wafer which are separated, removing the surface layer part of the first bonding layer, and then re-bonding the device wafer and the carrier wafer.
2. The wafer bonding method of claim 1, wherein a chemical mechanical polishing process is used to remove a surface layer portion of the first bonding layer.
3. The wafer bonding method of claim 1, wherein the thickness of the surface layer portion of the first bonding layer removed is 180-220 angstroms.
4. The wafer bonding method according to claim 1, wherein the device wafer and the carrier wafer are inspected for roughness and bending after the wafer bonding structure is debonded and before the device wafer and the carrier wafer are rebonded.
5. The wafer bonding method of claim 1, wherein after the device wafer and the carrier wafer are rebonded, the wafer bonding structure is bubble inspected.
6. The wafer bonding method of claim 1, wherein the first bonding layer is an oxide layer.
7. The wafer bonding method of claim 1 or 6, wherein the first bonding layer is formed using a PECVD process.
8. The wafer bonding method of claim 1, wherein the second bonding layer is an oxide layer.
9. The wafer bonding method of claim 1 or 8, wherein the second bonding layer is formed using a thermal oxidation process.
10. A method of forming a backside illuminated image sensor, comprising: bonding is performed using the wafer bonding method of any of claims 1-9.
CN202210850573.8A 2022-07-20 2022-07-20 Wafer bonding method and method for forming backside illuminated image sensor Pending CN115020436A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115881622A (en) * 2023-01-29 2023-03-31 合肥晶合集成电路股份有限公司 Wafer bonding method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115881622A (en) * 2023-01-29 2023-03-31 合肥晶合集成电路股份有限公司 Wafer bonding method

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