CN115019912A - Method for controlling electron escape probability of NEA GaN photocathode in real time - Google Patents
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Abstract
The invention provides a method for controlling electron escape probability of a NEAGaN photocathode in real time, which comprises the following steps: establishing a formula model for temperature calibration; obtaining the wavelength lambda and the doping concentration n of the sample A And temperature T 0 Measuring T a plurality of times 0 Probability of electron escape under the conditions P 0 Fitting sample parameters according to the data; substituting the sample parameters and the target electron escape probability P into the formula model, and calculating the output temperature T 1 (ii) a Measurement of T 1 Electron escape probability under the condition of P 1 And determining P 1 Degree of deviation s of 1 If it is less than the set value, the output temperature T is equal to T 1 If not less than the set value, at T 1 Under the conditions according to P 1 Fitting the sample parameters again; recalculating the output temperature T from the new sample parameters and P 2 (ii) a Measurement of T 2 Probability of electron escape under the conditions P 2 And comparing the degrees of deviation s 2 And a set value; repeating the above steps until the deviation s n If the value is less than the set value, the cycle is ended and output is performedOptimum temperature T ═ T for P n . The method can realize real-time accurate control on electron escape probability of the NEAGaN photocathode by a self-calibration temperature method, and has the advantages of improving performance parameters such as quantum efficiency and stability and improving working performance of the NEAGaN photocathode.
Description
Technical Field
The invention relates to measurement and regulation of electron escape probability parameters of a GaN photocathode, in particular to a method for controlling electron escape probability of a NEAGaN photocathode in real time.
Technical Field
GaN is an extremely stable compound, has the characteristics of high hardness, high melting point, high ionization degree, and has the characteristics of large bandwidth, high breakdown electric field strength, high saturated electron drift velocity, high thermal conductivity, small dielectric constant, strong radiation resistance, good chemical stability and the like. The third generation semiconductor material GaN photocathode based on Negative Electron Affinity (NEA) has the advantages of high quantum efficiency, small dark emission, good stability, concentrated emitted electron energy distribution and the like, and is an ideal electron source material.
According to the existing technology, under the condition that the doping concentration and the wavelength of working incident light of a NEAGaN photocathode sample are both determined, the finally achieved quantum efficiency of the material can also be basically determined, if the experimental result is inconsistent with the requirement and the quantum efficiency needs to be regulated and controlled, the raw material needs to be replaced, and the material needs to be reactivated for carrying out the experiment. In the experimental process, the quantum efficiency cannot be controlled online in real time, which undoubtedly increases the experimental cost and causes low experimental efficiency.
Research shows that electron escape probability of the NEAGaN photocathode can influence the quantum efficiency and is an important parameter for measuring the characteristics of the GaN photocathode. In practical applications, an electron source is often required to achieve a specific quantum efficiency or maintain a specific quantum efficiency to improve the stability of the photocathode material, and the above objective can be achieved by adjusting the electron emission probability, so that the measurement and control of the electron emission probability of the NEAGaN photocathode are very important.
Disclosure of Invention
The invention aims to provide a method capable of controlling the escape probability of a NEAGaN photocathode electron source in real time, and the real-time accurate control of the electron escape probability of the NEAGaN photocathode is realized by a self-calibration temperature method. Compared with the prior art, the method provided by the invention has obvious advancement.
In order to achieve the purpose, the invention adopts the following technical scheme:
the method for controlling electron escape probability of the NEA GaN photocathode in real time provided by the invention comprises the following steps of firstly establishing a temperature calibration formula model related to the electron escape probability of the NEAGaN photocathode, wherein the formula model comprises the following steps:
where C is a normalization constant, determined by the normalization equation:
wherein E is thermalization electron energy, and is taken as E being 3.4 eV;
is the difference between the thermalized electron energy and the conduction band bottom level; e 0 And both alpha and beta are GaN forbidden band width E g Correlation constant of (E) 0 ＝3.4789eV，α＝ -9.39×10 -4 eV/K，β＝772K；ε 0 Is the vacuum dielectric constant ε 0 ＝8.854×10 -12 F/m; ε is the relative dielectric constant of GaN,. epsilon.8.9; n is A Is the doping concentration of GaN in cm -3 (ii) a e is the charge amount of electrons, e is 1.6 × 10 -19 C；L p Is the electron scattering mean free path, L p ＝30nm；ΔE p Is the average energy lost by the electron in each collisional scatter, where Δ E is taken p 35 meV; k is Boltzmann constant, k is 1.38 × 10 -23 J/K; m is electron mass, m is 9.109 × 10 -31 kg; h is Planck constant, h is 6.626 × 10 -34 J · s; the above-mentioned parameters are not affected by temperature variations.
After the formula model is established, the following steps are carried out:
(1) determination of the sample doping concentration n before the start of the experiment A And the wavelength lambda of the working incident light, and the two parameters are fixed and unchanged in the following experiment after being determined; simultaneously setting a target electron escape probability P and a deviation set value s;
(2)obtaining the temperature T under initial experimental conditions 0 Measuring T a plurality of times 0 The electron escape probability of the NEAGaN photocathode under the conditions as a data sample is marked as P 01 ,P 02 ,...,P 0m While fitting the sample parameter delta according to the obtained m sets of data s0 ,V 20 ,V 30 ,b 0 ；
(3) Doping the sample with a concentration n A Inputting the target electron escape probability P and the sample parameter calibration result into a formula model, and calculating the output temperature T 1 ；
(4) Measurement of T 1 Electron escape probability P of NEAGaN photocathode under the condition 11 ,P 12 ,...,P 1m Obtaining m sets of data and calculating P 1 Degree of deviation s of 1 ；
(5) Determining the degree of deviation s 1 Whether is less than the deviation set value s, if s 1 If less than s, the output temperature T is equal to T 1 If s is 1 Not less than s is at T 1 Under the condition, re-fitting the sample parameter delta according to the m groups of data obtained in the step (4) s1 ,V 21 ,V 31 ,b 1 ；
(6) Calculating output temperature T by combining new sample parameter calibration result and target electron escape probability P 2 ；
(7) Measurement of T 2 Electron escape probability P of NEAGaN photocathode under the condition 21 ,P 22 ,...,P 2m And continue to compare P 2 Degree of deviation s of 2 The magnitude relation with a deviation set value s;
(8) repeating the above process until P n Degree of deviation s from P n When the deviation degree is less than the set value s, the cycle is ended, and the optimal temperature T which corresponds to the P is output n 。
Further, the wavelength λ of the incident light is a working wavelength value set by the system, and a value of the working wavelength value is generally in a range from 100nm to 350 nm.
Further, the target electron escape probability P is a value which needs to be achieved in actual work, and the value of P is in the range of 0 to 0.8 in combination with existing data;
further, the deviation set value s is set according to the accuracy degree of the actual requirement, and the value of s is generally in the range of 0 to 0.1%;
further, the m groups of data are measured samples of electron escape probability under certain temperature conditions, and the sample size should be at least 100 groups because the formula model established by the invention has 4 sample parameters related to temperature.
Further, the method for measuring electron escape probability of the NEA GaN photocathode under a certain temperature condition mentioned in the step (2), the step (4) and the step (7) is to rapidly test a spectral response curve of the NEA GaN photocathode by a spectral response tester, and fit the height and the slope of the obtained experimental curve with a theoretical curve of quantum yield, thereby calculating the electron escape probability of the NEA GaN photocathode.
Further, the fitting process in step (2) and step (5) is: using m sets of measurement data (P) n ,T n ) And fitting the formula model to obtain a sample parameter delta s ,V 2 ,V 3 B, the calibration result of b, the sample parameters are respectively the band bending amount delta s Surface I and II barrier end height V 2 And V 3 Surface i barrier width b.
Further, the deviation s in the step (4), the step (7) and the step (8) n The calculation model of (a) is:
where n is the data sequence number, P n And m groups of samples of electron escape probability are obtained, m is the number of samples of the electron escape probability, and P is the target electron escape probability.
Further, the data generated in the above experiment steps can be used as the reference value initially set in the next experiment.
Furthermore, the method can accurately control the electron escape probability of the working NEA GaN photocathode in real time on line.
Further, the above measurement and calibrationThe process is automatically carried out by computer software and hardware, only the target electron escape probability P, the deviation set value s and the measurement sample number m need to be input, and the optimal temperature T ═ T can be output finally in the experiment n And actual degree of deviation s n 。
The invention has the advantages and beneficial effects that:
(1) the electron escape probability of the NEA GaN photocathode in any experiment or application scene and different requirements on the quantum efficiency of the NEA GaN photocathode are greatly met.
(2) The real-time accurate control of the electron escape probability greatly improves the stability and durability of the NEA GaN photocathode material and effectively improves the working performance of the NEA GaN photocathode.
(3) The device is simple, the operation is simple and convenient, the adverse factors are few, and the required cost is low.
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FIG. 1 is a flow chart of the method of the present invention.
Detailed Description
The present invention is further described in detail with reference to the following embodiments in order to explain technical features and advantages of the present invention more deeply. The specific embodiments of the present invention are merely illustrative of the present invention and should not be construed as limiting the scope of the present invention in any way.
Method flow diagram of the invention as shown in fig. 1, there are many possible ways of implementing the flow diagram, and two specific examples are given by way of example only.
Example one
In this embodiment, a thickness of 200nm and a doping concentration of 3.0 × 10 are selected -17 cm -3 And pure GaN material with doping element Mg, size of 10 × 10mm and substrate sapphire.
After the temperature calibration formula model of the present invention is established, the following steps are performed:
(1) determination of the sample doping concentration n before the start of the experiment A Is 3.0X 10 -17 cm -3 The wavelength lambda of the working incident light is 230nm, and the two parameters are fixed and unchanged in the next experiment after being determined; set the target electron escape probability P to 0.5, biasedThe set value s of the separation degree is 0.04 percent;
(2) obtaining the temperature T under initial experimental conditions 0 Measured as T 0 300K and measuring the temperature T 0 The electron escape probability of NEAGaN photocathode under 300K condition was used as a data sample, and 150 sets of data P were recorded 01 ＝0.3241,P 02 ＝0.3253,...,P 0150 0.3327; fitting the sample parameters delta to the 150 sets of data obtained s0 ,V 20 ,V 30 ,b 0 ；
(3) Doping the sample with a concentration n A ＝3.0×10 -17 cm -3 Target electron emission probability P is 0.5 and sample parameter δ s0 ,V 20 ,V 30 ,b 0 Inputting into a formula model, calculating output temperature T 1 ＝290K；
(4) Measuring the temperature T 1 The electron escape probability of NEA GaN photocathode under 290K condition was used as a data sample, and 150 sets of data P were recorded 11 ＝0.4025,P 12 ＝0.4074,...,P 1150 ＝0.3958；
(5) Calculating P 1 Degree of deviation s of 1 The result of the calculation is s 1 When it is 1.8622%, s is judged 1 Not less than s at a temperature T 1 290K according to the 150 sets of data (P) obtained in the previous step 11 ＝0.4025,P 12 ＝0.4074,...,P 1150 0.3958), the sample parameter δ is fit again s1 ,V 21 ,V 31 ,b 1 ；
(6) Combined with a new sample parameter delta s1 ,V 21 ,V 31 ,b 1 Calculating the output temperature T according to the target electron escape probability P being 0.5 2 The result of the calculation is T 2 ＝283K；
(7) Measuring the temperature T 2 The electron escape probability under 283K condition was used as a data sample, and 150 sets of data P were recorded 21 ＝0.4692,P 22 ＝0.4737,...,P 2150 0.4771 and continue to compare P 2 Degree of deviation s of 2 0.1354% in relation to the magnitude of the deviation set point s;
(8) the above-mentioned "measurement-calculation-judgment" process is repeated,to 5 th calibration delta s5 ,V 25 ,V 35 ,b 5 Then, combining the existing data and formula model to calculate T 6 271K and at a temperature T 6 150 sets of data P are measured under 271K conditions 61 ＝0.4823,P 62 ＝0.4902,...,P 6150 0.4885 to yield P 6 Degree of deviation s from P 6 When the average value is 0.0398%, s is judged 6 When the deviation set value s is less than 0.04%, the cycle ends and the optimum temperature T corresponding to P is output at 271K.
Specifically, the deviation s in step (4), step (7) and step (8) n The calculation model of (a) is:
where n is the data sequence number, P n Representing a sample of the probability of escape of 150 sets of electrons acquired.
Specifically, the data generated in the above experimental steps can be used as the reference value initially set in the next experiment.
Specifically, the method can accurately control the electron escape probability of the working NEA GaN photocathode in real time on line.
Specifically, the above measurement and calibration processes are automatically performed by computer software and hardware, and only the target electron escape probability P is required to be input to 0.5, the deviation set value s is required to be 0.04%, the obtained sample number m is required to be 150, and the experiment finally outputs the optimal temperature T to be 271K and the actual deviation s 6 ＝0.0398％。
Example two
The thickness of 200nm and the doping concentration of 1.6 × 10 are selected for this embodiment -18 cm -3 And pure GaN material with doping element Mg, size of 10 × 10mm and substrate sapphire.
After the temperature calibration formula model of the present invention is established, the following steps are performed:
(1) determining the doping concentration n of the sample before the start of the experiment A Is 1.6X 10 -18 cm -3 Incident light of operationThe wavelength λ is 300nm, and the two data do not change after the experiment starts; setting the target electron escape probability P to be 0.6 and the deviation set value s to be 0.01 percent;
(2) obtaining the temperature T under initial experimental conditions 0 Measured as T 0 300K and the temperature T is measured 0 The electron escape probability of NEAGaN photocathode under the condition of 300K is used as a data sample, and 200 groups of data P are recorded 01 ＝0.4358,P 02 ＝0.4432,...,P 0200 0.4329; fitting the sample parameter δ from the 200 sets of data obtained s0 ,V 20 ,V 30 ,b 0 ；
(3) Doping the sample with a concentration n A ＝1.6×10 -18 cm -3 Target electron escape probability P is 0.6 and sample parameter δ s0 ,V 20 ,V 30 ,b 0 Inputting into a formula model, calculating output temperature T 1 ＝286K；
(4) Measuring the temperature T 1 The electron escape probability of NEA GaN photocathode under 286K condition was used as a data sample, and 200 sets of data P were recorded 11 ＝0.5279,P 12 ＝0.5234,...,P 1200 ＝0.5318；
(5) Calculating P 1 Degree of deviation s of 1 The result of the calculation is s 1 When it is 0.8425%, s is judged 1 Not less than s at a temperature T 1 286K according to 200 groups of data (P) obtained in the previous step 11 ＝0.5279,P 12 ＝0.5234,...,P 1200 0.5318), the sample parameter δ is fit again s1 ,V 21 ,V 31 ,b 1 ；
(6) Combined with a new sample parameter delta s1 ,V 21 ,V 31 ,b 1 Calculating the output temperature T when the target electron escape probability P is 0.6 2 The result of the calculation is T 2 ＝277K；
(7) Measuring the temperature T 2 The electron escape probability under 277K condition was used as a data sample, and 200 sets of data P were recorded 21 ＝0.5524,P 22 ＝0.5437,...,P 2200 0.5516 and continue to compare P 2 Degree of deviation s of 2 0.4167% and degree of deviationFixing the magnitude relation of the values s;
(8) repeating the above process of measuring, calculating and judging to the 7 th calibration delta s7 ,V 27 ,V 37 ,b 7 Then, combining the existing data and formula model to calculate T 8 268K and at a temperature T 8 Measuring 200 groups of data P under 268K condition 81 ＝0.5937,P 82 ＝0.5941,...,P 8200 0.5895, yield P 8 Degree of deviation s from P 8 When the total content is 0.0098%, s is judged 8 When the deviation set value s is less than 0.01%, the cycle ends and the optimum temperature T corresponding to P is output at 268K.
Specifically, the deviation s in step (4), step (7) and step (8) n The calculation model of (a) is:
where n is the data sequence number, P n Representing a sample of 200 sets of electron escape probabilities obtained.
Specifically, the data generated in the above experimental steps can be used as the reference value initially set in the next experiment.
Specifically, the method can accurately control the electron escape probability of the working NEA GaN photocathode in real time on line.
Specifically, the above measurement and calibration processes are automatically performed by computer software and hardware, and only the target electron escape probability P is 0.6, the deviation set value s is 0.01%, and the number of acquired samples m is 200, and the experiment finally outputs the optimal temperature T268K and the actual deviation s 8 ＝0.0098％。
While particular embodiments of the present invention have been shown and described, the present invention is not limited by the foregoing embodiments. Those skilled in the art will appreciate that various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the spirit and scope of the invention, and that such changes fall within the scope of the claimed invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. A method for controlling electron escape probability of NEA GaN photocathode in real time is characterized in that a temperature calibration formula model about the electron escape probability of the NEA GaN photocathode is established, and the formula model is as follows:
where C is a normalization constant, determined by the normalization equation:
wherein E is thermalization electron energy, and E is taken as 3.4 eV;
is the difference between the thermalized electron energy and the conduction band bottom level; e 0 And both alpha and beta are GaN forbidden band width E g Related parameter of (E) 0 ＝3.4789eV，α＝-9.39×10 -4 eV/K，β＝772K；ε 0 Is the vacuum dielectric constant ε 0 ＝8.854×10 -12 F/m; ε is the relative dielectric constant of GaN,. epsilon.8.9; n is A Is the doping concentration of GaN in cm -3 (ii) a e is the charge amount of electrons, e is 1.6 × 10 -19 C；L p Is the electron scattering mean free path, L p ＝30nm；ΔE p Is the average energy lost by the electron in each collisional scatter, where Δ E is taken p 35 meV; k is Boltzmann constant, k is 1.38 × 10 -23 J/K; m is electron mass, m is 9.109 × 10 -31 kg; h is Planck constant, h is 6.626 × 10 -34 J·s。
2. The method of claim 1, wherein the step of modeling the equation is performed by:
(1) determination of the doping concentration n of a sample A And working incident light wavelength lambda, and setting a target electron escape probability P and a deviation set value s;
(2) obtaining a temperature T 0 Measuring T a plurality of times 0 Probability of electron escape under the conditions P 0 Fitting sample parameters according to the obtained m groups of data;
(3) doping the sample with a concentration n A Inputting the target electron escape probability P and the sample parameter into a formula model, and calculating the output temperature T 1 ；
(4) Multiple measurement of T 1 Electron escape probability under the condition of P 1 Obtaining m sets of data and calculating P 1 Degree of deviation s of 1 ；
(5) Determining the degree of deviation s 1 Whether is less than the deviation set value s, if s 1 If less than s, the output temperature T is equal to T 1 If s is 1 Not less than s is at T 1 Under the condition, fitting the sample parameters again according to the obtained m groups of data;
(6) calculating the output temperature T by combining the new sample parameter and the target electron escape probability P 2 ；
(7) Measurement of T 2 Probability of electron escape under the conditions P 2 And continue to compare P 2 Degree of deviation s of 2 And a deviation set value s;
(8) repeating the processes from the step (5) to the step (7) until P n Degree of deviation s from P n When the deviation degree is less than the set value s, the cycle is ended, and the optimal temperature T which corresponds to the P is output n 。
3. The method of claim 2, wherein the wavelength λ of the incident light is a working wavelength set by a system; the target electron escape probability P is a value which needs to be reached by actual work; the deviation degree set value s is set according to the accuracy degree of the actual requirement; the m groups of data are obtained samples of electron escape probability under certain temperature conditions.
4. The method for real-time control of electron escape probability of NEA GaN photocathode according to claim 2, wherein the method for measuring electron escape probability under certain temperature condition mentioned in step (2), step (4) and step (7): the spectral response curve of the NEA GaN photocathode is quickly tested by a spectral response tester, and the height and the slope of the obtained experimental curve are fitted by using a theoretical curve of quantum yield, so that the electron escape probability of the NEA GaN photocathode is calculated.
5. The method of claim 2, wherein the fitting process in the steps (2) and (5) is as follows: using m sets of measurement data (P) n ,T n ) And fitting the formula model to obtain a sample parameter delta s ,V 2 ,V 3 B, the calibration result of b, the sample parameter is respectively the energy band bending quantity delta s Surface I and II barrier end height V 2 And V 3 Surface i barrier width b.
6. The method for real-time control of electron escape probability of NEA GaN photocathode according to claim 2, wherein the deviation s in step (4), step (7) and step (8) n The calculation model of (a) is:
where n is the data sequence number, P n And m groups of obtained electron escape probability samples are represented, m is the number of samples of the electron escape probability, and P is the target electron escape probability.
7. The method of claim 2, wherein the data generated in the experiment steps can be used as the reference value initially set in the next experiment.
8. The method of claim 2, wherein the method can precisely control the electron escape probability of the working NEA GaN photocathode in real time on-line.
9. The method of claim 2, wherein the measurement and calibration are performed automatically by computer hardware and software, only the target electron escape probability P, the deviation set value s and the measurement sample number m are input, and the experiment can output the optimal temperature T and the actual deviation s n 。
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|---|---|---|---|---|
| CN102064206A (en) * | 2010-11-30 | 2011-05-18 | 南京理工大学 | Multi-component gradient-doping GaN UV (Ultraviolet) light cathode material structure and manufacture method thereof |
| US20160343532A1 (en) * | 2015-05-21 | 2016-11-24 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
| CN108267678A (en) * | 2017-08-28 | 2018-07-10 | 北京工业大学 | A kind of method for building up of diode junction temperature on-line measurement school temperature curve |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064206A (en) * | 2010-11-30 | 2011-05-18 | 南京理工大学 | Multi-component gradient-doping GaN UV (Ultraviolet) light cathode material structure and manufacture method thereof |
| US20160343532A1 (en) * | 2015-05-21 | 2016-11-24 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
| CN108267678A (en) * | 2017-08-28 | 2018-07-10 | 北京工业大学 | A kind of method for building up of diode junction temperature on-line measurement school temperature curve |
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| Title |
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| 王晓晖: "纤锌矿结构GaN（0001）面的光电发射性能研究", 《中国优秀博士学位论文全文数据库（信息科技辑）》, 15 January 2014 (2014-01-15), pages 1 - 60 * |
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