CN115001436A - Acoustic wave resonator based on non-coplanar non-coincident interdigital electrodes - Google Patents
Acoustic wave resonator based on non-coplanar non-coincident interdigital electrodes Download PDFInfo
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- CN115001436A CN115001436A CN202210662349.6A CN202210662349A CN115001436A CN 115001436 A CN115001436 A CN 115001436A CN 202210662349 A CN202210662349 A CN 202210662349A CN 115001436 A CN115001436 A CN 115001436A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02062—Details relating to the vibration mode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02685—Grating lines having particular arrangements
- H03H9/02724—Comb like grating lines
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
Abstract
The invention discloses an acoustic wave resonator based on non-coplanar non-coincident interdigital electrodes, which comprises a piezoelectric thin plate, a first interdigital electrode and a second interdigital electrode, wherein the first interdigital electrode is arranged on the front surface of the piezoelectric thin plate, and the number of the first interdigital electrodes is at least one; the second interdigital electrode is arranged on the back surface opposite to the front surface of the piezoelectric thin plate, and the number of the second interdigital electrodes is at least one; and the projections of the first interdigital electrode and the second interdigital electrode in the thickness direction of the piezoelectric sheet are not overlapped with each other. Compared with the traditional structural device, the novel acoustic wave resonator based on the non-coplanar interdigital electrode structure has the advantages that the wavelength of the device is reduced by one time under the same finger width condition, and a brand-new ultrahigh frequency acoustic wave device is expected to be developed based on the novel acoustic wave resonator; in some embodiments, if a proper piezoelectric film tangential direction is selected, a device with an electromechanical coupling coefficient larger than 20% can be obtained, so that the development of a high-bandwidth filter is supported.
Description
Technical Field
The invention relates to the technical field of filters, in particular to an acoustic wave resonator based on non-coplanar and non-coincident interdigital electrodes.
Background
With the development of wireless communication technology, a radio frequency front-end system puts higher technical requirements on the development of the existing acoustic wave filter; however, at present, the SAW filter, the FBAR filter or the emerging XBAR filter have some defects when facing high index requirements; the traditional SAW filter adopts a coplanar interdigital electrode structure, the width of an interdigital electrode needs to be reduced to be less than 100nm to realize the working frequency higher than 10GHz, the Q value of a device is reduced due to the excessively small interdigital width, the power capacity is reduced, the requirements of low insertion loss and high power capacity of the acoustic wave filter are difficult to meet, the electromechanical coupling coefficient of the traditional SAW filter is not high, and the requirement of high bandwidth of a high-frequency filter is difficult to meet. For the FBAR filter, to realize a resonant frequency above 10GHz, the thickness of the core structure layer of the device needs to be reduced to below 300nm, which is difficult to implement in the process, and for the FBAR filter based on AlN or doped AlN, when the thickness of the film is thin, the internal defects of the piezoelectric thin plate increase, which will cause the Q value of the device to be reduced, and meanwhile, the relative bandwidth that the FBAR device based on AlN or doped AlN can support is less than 10%, which is difficult to meet the requirement of broadband application. For the XBAR filter, to realize high frequency, the thickness of the piezoelectric thin plate needs to be very thin, meanwhile, the existing XBAR device usually works based on higher harmonics, and other harmonics exist in the low frequency band, and the filter developed based on the existing XBAR device will have some passbands in the low frequency band, which will affect the final filtering effect. In general, based on the existing SAW, FBAR and XBAR technologies, it is difficult to develop a filter capable of satisfying ultra-high frequency (greater than 10GHz), high bandwidth (greater than 10%), high power capacity (greater than 30 dBm).
Disclosure of Invention
Based on the defects of the prior art, the invention aims to provide an acoustic wave resonator based on non-coplanar and non-coincident interdigital electrodes.
The specific content is as follows: an acoustic wave resonator based on non-coplanar non-coincident interdigital electrodes, comprising:
a piezoelectric sheet;
the first interdigital electrode is arranged on the front surface of the piezoelectric thin plate, and the number of the first interdigital electrodes is at least one;
the second interdigital electrode is arranged on the back surface opposite to the front surface of the piezoelectric thin plate, and the number of the second interdigital electrodes is at least one; and the projections of the first interdigital electrode and the second interdigital electrode in the thickness direction of the piezoelectric sheet are not overlapped with each other.
As a further improvement of the invention, the front surface of the piezoelectric thin plate is provided with at least one first metal reflecting grating.
As a further improvement of the present invention, the back surface of the piezoelectric thin plate is provided with at least one second metal reflective grating.
As a further improvement of the invention, the minimum finger width of the first interdigital electrode is 100nm-1000nm, and the thickness is 20nm-500 nm; the minimum finger width of the second interdigital electrode is 100nm-1000nm, and the thickness of the second interdigital electrode is 20nm-500 nm.
As a further improvement of the invention, the thickness of the piezoelectric thin plate is 100nm-2000 nm.
As a further improvement of the present invention, the finger end of the first interdigital electrode is provided with a first dummy finger separated therefrom, and the finger end of the second interdigital electrode is also provided with a second dummy finger separated therefrom.
As a further improvement of the present invention, the front surface or the back surface of the piezoelectric thin plate is provided with a temperature compensation layer.
As a further improvement of the present invention, the piezoelectric sheet is further provided with an electrical structure, the electrical structure includes a first electrode and a second electrode respectively disposed on the front surface and the back surface of the piezoelectric sheet, and the first electrode and the second electrode are electrically connected.
As a further improvement of the present invention, the piezoelectric thin plate is provided with a through hole penetrating along the thickness direction thereof, and two ends of the through hole are respectively electrically connected with the first electrode and the second electrode through metal filled in the through hole.
As a further improvement of the invention, the piezoelectric sheet is further provided with a support structure, the support structure is connected with the back surface of the piezoelectric sheet through a plurality of bonding layers, and an air layer is arranged between the piezoelectric sheet and the support structure.
The invention has the beneficial effects that: the invention is an acoustic wave resonator based on non-coplanar non-coincident interdigital electrodes, compared with the traditional structural device, the wavelength of the device is reduced by one time under the same finger width condition, and a brand new ultrahigh frequency acoustic wave device is expected to be developed based on the invention; the invention proposesBased on non-coplanar interdigital electrode and preferred tangential LiNbO 3 The novel acoustic wave resonator of the single crystal film can also obtain a device with electromechanical coupling coefficient more than 20 percent, thereby supporting the development of a large-bandwidth filter and being expected to meet the severe challenge of the development of the existing acoustic wave filter; based on the invention, a brand-new ultrahigh frequency acoustic wave device is expected to be developed, and a solid foundation is laid for the development of a high-performance ultrahigh frequency acoustic wave filter; based on the invention, a brand-new sound wave filter technology is expected to be developed, technical support is provided for a front-end system of 5G or even 6G terminal equipment, the development of the next-generation sound wave technology is led, and the progress of the wireless communication technology is promoted.
Drawings
FIG. 1 is a schematic diagram of a main structure of an acoustic wave resonator based on non-coplanar non-coincident interdigital electrodes;
FIG. 2 is a front sectional view of an acoustic resonator based on non-coplanar and non-coincident interdigital electrodes in accordance with the present invention;
FIG. 3 is a top view of an acoustic wave resonator based on non-coplanar non-coincident interdigital electrodes;
FIG. 4 is a diagram illustrating the geometry of a first interdigitated electrode in accordance with an embodiment of the present invention;
FIG. 5 is a diagram illustrating the geometry of a first interdigitated electrode in accordance with yet another embodiment of the present invention;
FIG. 6 is a diagram illustrating the geometry of a front comb-structured electrode with a dummy finger structure according to another embodiment of the present invention;
FIG. 7 is an illustration of a geometry of a front comb-structured electrode with a dummy finger structure according to yet another embodiment of the present invention;
FIG. 8 is a cross-sectional view of the present invention including a temperature compensation layer;
FIG. 9 is a cross-sectional view of an embodiment of the present invention including a support structure;
FIG. 10 is a cross-sectional view of yet another embodiment of the present invention including a support structure;
FIG. 11 is a simulation comparison diagram of different interdigital electrode structure devices via FEM;
the reference numbers in the figures illustrate: 1. a piezoelectric sheet; 2. a first interdigital electrode; 3. a second interdigital electrode; 4. a first metal reflective gate; 5. a second metal reflective gate; 6. a first artificial finger; 61. a second artificial finger; 7. a temperature compensation layer; 8. a second electrode; 9. a through hole; 10. a first electrode; 11. an adhesive layer; 12. a support structure; 13. an air layer.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
In a first embodiment, referring to fig. 1 to 11, an acoustic resonator based on non-coplanar misaligned interdigital electrodes, based on a pseudo-piezoelectric effect, the acoustic resonator of the present invention employs comb interdigital electrodes in a non-coplanar misaligned structure to convert electrical energy into acoustic energy, or conversely, convert acoustic energy into electrical energy according to a reverse piezoelectric effect, and includes:
a piezoelectric sheet 1, the thickness of the piezoelectric sheet 1 is 100nm-2000nm, and thin films of lithium niobate, lithium tantalate and the like with different Euler angles can be adopted, such as 128 degrees YX lithium niobate with corresponding Euler angles of (0,38 degrees, 0); single crystal piezoelectric materials such as lithium niobate, lithium tantalate, single crystal aluminum nitride, quartz, etc. may also be used; or polycrystalline piezoelectric films such as polycrystalline aluminum nitride, zinc oxide, and the like; the single crystal piezoelectric film can be manufactured by adopting an ion slicing or grinding and thinning process. The piezoelectric sheet 1 may also be a polycrystalline piezoelectric film in some embodiments, including but not limited to aluminum nitride, doped aluminum nitride, zinc oxide, lead zirconate titanate, gallium nitride, and the like; further, single crystal aluminum nitride, single crystal doped aluminum nitride, single crystal zinc oxide, single crystal lead zirconate titanate, single crystal gallium nitride, or the like may be used as the piezoelectric layer. The polycrystalline or single crystal aluminum nitride, doped aluminum nitride, zinc oxide, lead zirconate titanate, gallium nitride and the like can be prepared by adopting magnetron Sputtering (Sputtering), Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), monolayer deposition (ALD) and other processes.
The first interdigital electrode 2 is comb-shaped and is used for exciting the sound wave of the piezoelectric film under the action of external excitation, the first interdigital electrode 2 is arranged on the front surface of the piezoelectric thin plate 1, and the number of the first interdigital electrode 2 is at least one; the strength of the excited acoustic wave signal increases with the number of the interdigital electrodes, the number of the first interdigital electrode 2 is 5-100, and the material for manufacturing the first interdigital electrode 2 includes, but is not limited to, metals such as aluminum, gold, copper, silver, platinum, molybdenum, titanium, tungsten, and the like.
And the second interdigital electrode 3 has the same function as the first interdigital electrode 2, is comb-shaped, and excites the acoustic wave propagating along the piezoelectric sheet 1 under the action of external excitation, the strength of the excited acoustic wave signal increases with the increase of the number of the interdigital electrodes, the number of the second interdigital electrodes 3 is 5-100, and the material for manufacturing the second interdigital electrode 3 includes but is not limited to metals such as aluminum, gold, copper, silver, platinum, molybdenum, titanium, tungsten and the like. The second interdigital electrodes 3 are arranged on the back surface opposite to the front surface of the piezoelectric sheet 1, and the number of the second interdigital electrodes 3 is at least one; the projections of the first interdigital electrode 2 and the second interdigital electrode 3 in the thickness direction of the piezoelectric sheet 1 are not overlapped with each other, and a plate capacitor is not formed between the first interdigital electrode and the second interdigital electrode; as shown in fig. 2, which is a cross-sectional view of the device body structure, it can be seen that in the cross-sectional direction, the two interdigital electrodes are not located together, and there is no overlapping region in the longitudinal direction. Fig. 3 is a front plan view of the resonator body structure, and as shown in the figure, the first interdigital electrode 2 or the second interdigital electrode 3 on one side of the piezoelectric sheet 1 can be seen when the device is viewed from directly above or directly below; if the piezoelectric sheet 1 is transparent, the first interdigital electrode 2 and the second interdigital electrode 3 can be seen at the same time.
In a specific embodiment, the two interdigital electrodes are manufactured step by step, and when a Layout (Layout) is designed, the first interdigital electrode 2 and the second interdigital electrode 3 are strictly ensured not to be overlapped. In some embodiments, the piezoelectric sheet 1 is partially etched by a wet or dry etching process to expose the second interdigital electrode 3 on the back surface for electrical connection, and the first interdigital electrode 2 and the second interdigital electrode 3 do not overlap to excite the acoustic wave signal propagating along the surface of the piezoelectric sheet 1, which can suppress the generation of the longitudinal wave.
The front surface of the piezoelectric thin plate 1 is provided with at least one first metal reflecting grid 4; in some embodiments, a device scheme without a reflective grating may be used, in some embodiments the reflective grating may be located on a single side of the first interdigitated electrode 2; the back of the piezoelectric thin plate 1 is provided with at least one second metal reflective grating 5, in some embodiments, a device scheme without a reflective grating can be adopted, and in some embodiments, the reflective grating can be positioned on a single side of the second interdigital electrode 3; the two metal reflecting grids can reflect the acoustic wave signals generated by the interdigital electrodes, so that the acoustic wave signals are accumulated in the interdigital electrode area, energy loss is reduced, and the two metal reflecting grids, the piezoelectric thin plate 1, the first interdigital electrode 2 and the second interdigital electrode 3 jointly form a high-performance resonator, so that a higher quality factor, namely a higher Q value, is obtained.
The minimum finger width of the first interdigital electrode 2 is 100nm-1000nm, and the thickness is 20nm-500 nm; the minimum finger width of the second interdigital electrode 3 is 100nm-1000nm, and the thickness is 20nm-500 nm.
As shown in fig. 4, in some embodiments, for the first interdigital electrode 2 and the second interdigital electrode 3, in the case of multiple pairs, the width of each electrode may be equal, which is a, the inter-electrode distance is equal, the value is b, the length of each electrode is also equal, and the length is w; furthermore, in this kind of embodiments, the first interdigital electrode 2 and the second interdigital electrode 3 have the same size, and the period λ of the device formed by the two interdigital electrodes is a + b.
In yet another embodiment, as shown in fig. 5, the width of each of the first interdigital electrode 2 and the second interdigital electrode 3 may not be equal, but it is necessary to ensure that the following relationship is satisfied between adjacent fingers and spaces: i.e., a + b + c + d + e + f … λ, where λ is the period length between adjacent pairs of fingers; by the finger width changing design method, the generation of surface noise can be inhibited, and the impedance characteristic of the device can be changed.
As shown in fig. 6, in an embodiment, there is also a finger structure at both ends of the first interdigital electrode 2 and the second interdigital electrode 3, that is, the finger end of the first interdigital electrode 2 is provided with a first finger 6 separated therefrom, and the finger end of the second interdigital electrode 3 is also provided with a second finger 61 separated therefrom; the finger structures are separated from the comb-shaped finger strips, and each finger has the same length and the same width as the width of the finger at the closest position. Further, as shown in fig. 7, the lengths of the artificial finger structures may not be equal; this type of finger distribution is equally applicable to the second interdigital electrode 3 located on the other side of the piezoelectric sheet 1. The transverse wave interference between the resonance points (fr) and (fa) can be suppressed by adding the dummy finger, and the boundary echo signal generated by the periodic boundary can be suppressed by adopting the design of the weighting structure with different lengths of the finger strips of the interdigital electrode, so that the influence of the boundary echo is reduced.
As shown in fig. 7, in some embodiments, the front surface or the back surface of the piezoelectric sheet 1 is provided with a temperature compensation layer 7, and the thickness of the temperature compensation layer 7 is 50nm to 500 nm. Since the piezoelectric thin plate 1 usually has a negative temperature coefficient, in order to ensure the temperature stability of the product in actual operation, the temperature drift characteristics of the device can be compensated by introducing the temperature compensation layer 7 with the positive temperature coefficient, and the temperature compensation layer 7 to be introduced with the positive temperature coefficient material includes, but is not limited to, silicon oxide, silicon oxyfluoride, barium titanate, and the like.
Further, the temperature compensation layer 7 shown in fig. 8 can also be used as a supporting layer of a floating structure, and the supporting layer material includes but is not limited to silicon nitride, aluminum nitride, gallium nitride, zinc oxide, hafnium oxide, etc. The supporting layer can increase the structural strength of the core functional structure on one hand, and can also be used as a back etching stop layer in the actual device manufacturing process, so that the integrity of the main body structure is ensured.
In addition to the main structure, in the embodiment of the present invention, an electrical structure is further disposed on the piezoelectric sheet 1, the electrical structure includes a first electrode 10 and a second electrode 8 respectively disposed on the front surface and the back surface of the piezoelectric sheet 1, and the first electrode 10 is electrically connected to the second electrode 8; the piezoelectric thin plate 1 is provided with a through hole 9 penetrating along the thickness direction of the piezoelectric thin plate, and two ends of the through hole 9 are respectively and electrically connected with the first electrode 10 and the second electrode 8 through metal filled in the through hole.
As shown in fig. 9, the piezoelectric sheet 1 is further provided with a supporting structure 12, the thickness of the supporting structure 12 is 100 micrometers-1000 micrometers, and the used materials include, but are not limited to, silicon, glass, single crystal quartz, sapphire, silicon carbide, lithium niobate, lithium tantalate, and the like. The support structure 12 is connected to the back surface of the piezoelectric sheet 1 through a plurality of adhesive layers 11, specifically, the support structure 12 can be tightly connected to the top piezoelectric sheet 1 through silicon oxide, further, in this embodiment, the thickness of the adhesive layer 11 is 500nm to 10 μm, and the used materials include, but are not limited to, silicon oxide, silicon nitride, gold, aluminum, copper, photoresist, BCB glue, etc. An air layer 13 is arranged between the piezoelectric thin plate 1 and the supporting structure 12, and the depth of the air layer 13 is 500 nanometers-10 micrometers.
As shown in fig. 10, in some embodiments, the supporting structure 12 under the main structure of the piezoelectric sheet 1 is completely hollowed out, forming a back cavity connected to the atmosphere, which may be referred to as an air layer 13; the back cavity can be manufactured by a Deep Reactive Ion Etching (DRIE) or wet etching process; the support material undercut thickness is equal to the support material thickness, the back support structure 12 can cause resonator frequency changes and can also change device temperature characteristics; typically, the resonator containing support structure 12 has a lower frequency and the frequency decreases as the thickness of support structure 12 increases, and support structure 12 can function to simultaneously tune the frequency and temperature of the device.
As shown in fig. 11, it is a comparison of device performance of the acoustic wave resonator adopting the non-coplanar interdigital electrode structure of the present invention and the acoustic wave resonator adopting the conventional coplanar interdigital electrode structure by using FEM; in the embodiment, when the thickness of the ZX tangential lithium niobate piezoelectric thin plate 1 is 400 nanometers and the finger width of the comb-shaped interdigital electrode is 200nm, the frequency of the device can be effectively improved by adopting the design scheme of the device, and compared with the traditional structure, the frequency of the device is improved by nearly 2 times; meanwhile, the electromechanical coupling coefficient of the device is improved to a certain extent.
Compared with the traditional structural device, the wavelength of the device is doubled under the same finger width condition, and a brand-new ultrahigh frequency acoustic wave device is expected to be developed based on the invention; the novel acoustic wave resonator based on the non-coplanar interdigital electrode and the preferred tangential LiNbO3 single crystal film can also obtain a device with an electromechanical coupling coefficient of more than 20 percent, thereby supporting the development of a large-bandwidth filter and being expected to meet the severe challenge of the development of the existing acoustic wave filter; based on the invention, a brand-new ultrahigh frequency acoustic wave device is expected to be developed, and a solid foundation is laid for the development of a high-performance ultrahigh frequency acoustic wave filter; based on the invention, a brand-new sound wave filter technology is expected to be developed, technical support is provided for a front-end system of 5G or even 6G terminal equipment, the development of the next-generation sound wave technology is led, and the progress of the wireless communication technology is promoted.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (10)
1. An acoustic resonator based on non-coplanar non-coincident interdigital electrodes, comprising:
a piezoelectric sheet;
the first interdigital electrode is arranged on the front surface of the piezoelectric thin plate, and the number of the first interdigital electrodes is at least one;
the second interdigital electrode is arranged on the back surface opposite to the front surface of the piezoelectric thin plate, and the number of the second interdigital electrodes is at least one; and the projections of the first interdigital electrode and the second interdigital electrode in the thickness direction of the piezoelectric sheet are not overlapped with each other.
2. The non-coplanar non-coincident interdigital electrode-based acoustic resonator according to claim 1, wherein the front surface of said piezoelectric sheet is provided with at least one first metal reflective grating.
3. The non-coplanar non-coincident interdigital electrode-based acoustic resonator according to claim 1, wherein the back surface of said piezoelectric sheet is provided with at least one second metal reflective grating.
4. The non-coplanar non-coincident interdigital electrode-based acoustic resonator according to claim 1, wherein the first interdigital electrode has a minimum finger width of 100nm to 1000nm and a thickness of 20nm to 500 nm; the minimum finger width of the second interdigital electrode is 100nm-1000nm, and the thickness of the second interdigital electrode is 20nm-500 nm.
5. The non-coplanar non-coincident interdigital electrode-based acoustic resonator according to claim 1, wherein the thickness of said piezoelectric sheet is in the range of 100nm to 2000 nm.
6. The non-coplanar non-coincident interdigital electrode-based acoustic wave resonator according to claim 1, wherein the finger end of said first interdigital electrode is provided with a first dummy finger separated therefrom, and the finger end of said second interdigital electrode is also provided with a second dummy finger separated therefrom.
7. The non-coplanar non-coincident interdigital electrode-based acoustic resonator according to claim 1, wherein the piezoelectric sheet is provided with a temperature compensation layer on the front surface or the back surface.
8. The non-coplanar non-coincident interdigital electrode-based acoustic resonator according to claim 1, wherein the piezoelectric sheet further comprises an electrical structure, the electrical structure comprises a first electrode and a second electrode respectively disposed on the front surface and the back surface of the piezoelectric sheet, and the first electrode and the second electrode are electrically connected.
9. The acoustic resonator based on non-coplanar and non-coincident interdigital electrodes according to claim 8, wherein the piezoelectric sheet is provided with a through hole penetrating along the thickness direction thereof, and two ends of the through hole are electrically connected to the first electrode and the second electrode respectively through the metal filled in the through hole.
10. The acoustic resonator based on non-coplanar and non-coincident interdigital electrodes according to claim 1, wherein the piezoelectric sheet further comprises a support structure, the support structure is connected to the back surface of the piezoelectric sheet through a plurality of adhesive layers, and an air layer is disposed between the piezoelectric sheet and the support structure.
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