CN115000667B - On-chip resonant sensor based on artificial surface plasmon - Google Patents
On-chip resonant sensor based on artificial surface plasmon Download PDFInfo
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- CN115000667B CN115000667B CN202210924738.1A CN202210924738A CN115000667B CN 115000667 B CN115000667 B CN 115000667B CN 202210924738 A CN202210924738 A CN 202210924738A CN 115000667 B CN115000667 B CN 115000667B
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- H01P7/08—Strip line resonators
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Abstract
The invention provides an on-chip resonant sensor based on artificial surface plasmons, wherein a metal ring (1) of the sensor is positioned in the middle of the sensor, metal gratings (2) are arranged on the inner side of the metal ring (1), and the inner ends of the metal gratings (2) are connected together in pairs through trapezoidal connecting metal blocks (3); feed metal arcs (4) are symmetrically distributed on the left side and the right side outside the metal circular ring (1), and the feed metal arcs (4) are connected with the signal bonding pad (6) through fifty ohm microstrip lines (5); the first grounding pad (7) and the second grounding pad (8) are respectively positioned at two sides of the signal pad (6) and connected with the metal layer (11) through the photoresist (9) and the substrate (10). The sensor is high in quality factor and sensitive to the surrounding environment, and the working frequency can be expanded to microwave, millimeter wave and terahertz frequency bands by scaling the artificial surface plasmon structure in an equal proportion.
Description
Technical Field
The invention relates to an on-chip sensor, in particular to an on-chip resonant sensor based on artificial surface plasmons, belonging to the technical field of microelectronic integrated circuit device manufacturing.
Background
With the rapid development of technology, the demand for high performance chips has increased dramatically. An important factor restricting the performance improvement of the integrated circuit such as the improvement of the integration level, the reduction of the loss, the reduction of the crosstalk and the like is that the passive microwave integrated circuit device, which is taken as an indispensable chip component, often occupies most of the area, and the miniaturization design, the structural innovation and the performance improvement of the passive microwave integrated circuit are urgent.
The surface plasmon is an electromagnetic oscillation mode existing at the interface of metal and medium, has strong constraint on an electromagnetic field, can effectively reduce circuit crosstalk, compresses working wavelength, and has excellent high-frequency cutoff characteristic. In order to realize the excellent characteristics of the surface plasmons in a lower frequency band, the artificial surface plasmons are provided and successfully verified, the transmission or resonance characteristics of the surface plasmons can be simulated through different arrangement modes by designing a unit structure with a specific size, and the artificial surface plasmons have huge application potential in the design of devices such as high-performance transmission lines, couplers, power dividers, filters, resonators and sensors, and are beneficial to improving the propagation efficiency, improving the circuit integration level and realizing high-performance sensing detection.
The artificial surface plasmon has a wide application prospect in the field of semiconductor integrated circuits due to excellent electromagnetic performance, is expected to break through the defect that the high-frequency performance of the traditional microwave integrated circuit is seriously reduced, enables the chip to have higher frequency, smaller size and higher performance, and plays a great role in the fields of communication, quantum computing, medical detection and the like.
Disclosure of Invention
The technical problem is as follows: the invention aims to provide an artificial surface plasmon-based on-chip resonant sensor with high quality factor and high sensitivity, which adopts the idea of open pore coupling of the traditional artificial local surface plasmon polariton grating, utilizes a microstrip line and a microstrip coupling branch to feed power, applies an artificial local surface plasmon polariton structure to semiconductor processes of gallium arsenide, indium phosphide and the like, and realizes a miniaturized, easily integrated, high-Q-value and high-sensitivity high-frequency on-chip sensor.
The technical scheme is as follows: the invention discloses an on-chip resonant sensor based on artificial surface plasmons, which comprises a metal ring, a metal grating, a trapezoidal connecting metal block, a feed metal arc, a fifty-ohm microstrip line, a signal pad, a first grounding pad, a second grounding pad, photoresist, a substrate and a metal layer, wherein the metal ring is made of a metal material; the metal ring is positioned in the middle of the sensor, the metal grating is arranged on the inner side of the metal ring, the outer end of the metal grating is connected with the inner side of the metal ring, and the inner ends of the metal grating are connected together in pairs through trapezoidal connecting metal blocks; feed metal arcs are symmetrically distributed on the left side and the right side outside the metal circular ring and are connected with the signal bonding pad through fifty ohm microstrip lines; the first grounding bonding pad and the second grounding bonding pad are respectively positioned at two sides of the signal bonding pad and are connected with the metal layer by penetrating through the photoresist and the substrate;
on the aspect structure, a metal ring, a metal grating, a trapezoidal connecting metal block, a feed metal arc, a fifty-ohm microstrip line and a signal pad are arranged on the upper portion of photoresist, a substrate is arranged on the lower portion of the photoresist, a metal layer is arranged on the lower portion of the substrate, and the metal layer is used as a metal structure ground covering the back face of the whole structure.
The inner end of the metal grating extends towards the direction of the circle center and is arranged periodically along the inner circumference of the metal ring.
The trapezoid connecting metal blocks are connected between two adjacent metal gratings at intervals, and the inner ends of the two adjacent metal gratings are connected together, so that a trapezoid hole is formed between the two adjacent metal gratings and the trapezoid connecting metal blocks in the inner side of the metal ring.
The feed metal arc is positioned on the outer side of the metal ring and is provided with a section of gap, and the arc of the feed metal arc corresponds to the outer circumference of the metal ring.
Fifty ohm microstrip lines outside the feed metal arc are arranged along the diameter direction of the metal ring in the length direction.
The metal ring, the metal grating and the trapezoidal connecting metal block increase the resonant frequency by reducing the diameter of the metal ring and the length of the metal grating; through increasing the trapezoidal hole area between metal ring, metal grating and the trapezoidal metal block of connecting, improve resonance intensity and resonance Q value.
The metal ring, the metal grating, the trapezoidal connecting metal block and the feed metal arc are provided with a sample to be detected on the upper surface, the change of the dielectric constant of the sample to be detected can shift the frequency point of the resonance mode, thereby calculating the sensitivity of the resonance type sensor to the change of the sample to be detected
And sensitivity value
(ii) a Wherein
，
Wherein
In order to obtain the frequency offset of the resonance frequency point,
for refractive index change, refractive index
As the dielectric constant of the sample, the dielectric constant,
of 3dB bandwidth for the resonance peak
。
And the tail end of the fifty-ohm microstrip line has a section of width gradually transited through a fold line until the width of the fifty-ohm microstrip line is the same as that of the signal pad, and the fifty-ohm microstrip line are connected together.
The feed metal arc changes the length, the width and the distance between the feed metal arc and the metal ring, and adjusts the feed efficiency, thereby adjusting and controlling the resonance strength and the resonance quality factor of the resonance mode.
The first grounding bonding pad and the second grounding bonding pad are of metal columnar structures, a gap is formed between the first grounding bonding pad and the signal bonding pad, the upper surfaces of the first grounding bonding pad and the second grounding bonding pad are flush with the upper surface of the signal bonding pad, and the lower surfaces of the first grounding bonding pad and the second grounding bonding pad are connected with the metal layer.
Has the advantages that: the on-chip resonant sensor based on the artificial surface plasmon has the beneficial effects that:
1. the electrical dimensions of the present invention are small. In the invention, a grating hole opening mode is introduced into the artificial local surface plasmon polariton structure in the middle of the structure, the middle part of the wider grating is made into a hole-shaped structure, and the path length of the surface current is compressed to be far smaller than the size of the artificial surface plasmon polariton structure. The size of the resonator structure can reach about one eleventh of the working wavelength.
2. The invention adopts the local artificial surface plasmon structure as the resonator structure, has strong field constraint capability, localizes the electromagnetic field around the structure, improves the circuit integration level and is highly sensitive to the surrounding environment of the sensor.
3. According to the invention, the resonator with the holes formed in the local artificial surface plasmon polariton grating is adopted, the magnetic coupling characteristic is introduced, the coupling between the metal grating and the metal grating is mutually enhanced, an electromagnetic field is further bound around the resonator structure, and the intensity and the Q value of the resonator resonance mode are improved.
4. The invention accords with the design rules of gallium arsenide, indium phosphide and other semiconductor processes, applies the traditional artificial surface plasmon circular structure to the on-chip process, and can exert the excellent performances of high Q value, miniaturization and the like of the artificial surface plasmon resonator to a greater extent compared with a linear structure.
5. The invention has high quality factor. The Q values of the dipole, the quadrupole and the hexapole in three resonance modes are respectively 25, 47 and 64, and compared with the same type of existing structure, the resonance Q value of the passive resonator is higher, so that the passive resonator has great feasibility in designing a high-Q-value passive resonator.
6. The invention has high sensitivity. When the dielectric constant around the sensor changes, the sensing sensitivity values FoM of the dipole, the quadrupole and the hexapole of the invention in three resonance modes are respectively 1
、3
And 7
. Compared with the existing structure of the same type, the terahertz wave sensor is more sensitive to the change of the dielectric constant of the surrounding environment under the high-frequency condition, so that the terahertz wave sensor has great feasibility in the aspect of designing the terahertz wave sensor with high sensitivity.
7. The invention has simple structure, can realize miniaturization and easy integration, can realize interlayer grating coupling and same-layer grating coupling by utilizing the advantages of multilayer metal in a semiconductor process, and can work in terahertz, microwave and millimeter wave frequency bands by scaling in equal proportion.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a transmission parameter of the present invention
A simulation result schematic diagram;
FIG. 3 is a schematic diagram of the near field electric field measurements of the present invention;
FIG. 4 is a schematic view of the structure of the present invention as a sensor in example 2;
FIG. 5 shows the transmission parameters of the present invention as a sensor in example 2
A simulation result schematic diagram;
the figure shows that: the device comprises a metal ring 1, a metal grating 2, a trapezoidal connecting metal block 3, a feed metal arc 4, a fifty-ohm microstrip line 5, a signal pad 6, a first grounding pad 7, a second grounding pad 8, photoresist 9, a substrate 10, a metal layer 11 and a sample to be tested 12. Dipole m1, quadrupole m2, hexapole m3.
Detailed Description
The present invention is further illustrated by the following specific examples, which are intended to be illustrative, not limiting and are not intended to limit the scope of the invention.
Example 1: embodiment 1 is an application of the artificial surface plasmon-based on-chip resonant sensor of the present invention as a single resonator.
As shown in fig. 1, the microstrip line antenna comprises a metal ring 1 at the center, a metal grating 2, a trapezoidal connection metal block 3, a feed metal arc 4, a fifty-ohm microstrip line 5, a signal pad 6, a first grounding pad 7, a second grounding pad 8, a photoresist 9, a substrate 10 and a metal layer 11; the metal grating is arranged on the inner side of the metal ring 1, the tail ends of the metal gratings 2 are connected together in pairs through trapezoidal connecting metal blocks 3, and two feed metal arcs 4, fifty-ohm microstrip lines 5, signal pads 6, first grounding pads 7 and second grounding pads 8 are symmetrically distributed on the left side and the right side of the metal ring 1; the first grounding pad 7 and the second grounding pad 8 penetrate through the photoresist 9 and the substrate 10 to be connected with the metal layer 11, other metal structures are arranged on the upper portion of the photoresist 9, the substrate 10 is arranged on the lower portion of the photoresist 9, the metal layer 11 is arranged on the lower portion of the substrate 10, and the metal layer 11 is used as a metal structure ground covering the back face of the whole structure.
The metal ring 1, the metal grating 2 and the trapezoidal connecting metal block 3 have adjustable structural parameters, the structural parameters comprise the inner radius and the outer radius of the metal ring 1, the length, the width, the distance and the number of the metal grating 2, the height and the upper and lower bottom side lengths of the trapezoidal connecting metal block 3, and the frequency, the intensity and the Q value of each resonance mode and the sensitivity to the surrounding environment can be adjusted by changing the parameters.
The feed metal arc 4 is connected with the fifty-ohm microstrip line 5 to serve as a feed structure of the sensor structure, the tail end of the fifty-ohm microstrip line 5 is connected with the signal pad 6, the first grounding pad 7 and the second grounding pad 8 serve as probe needle points to introduce electromagnetic signals, the electromagnetic signals are coupled into the sensor structure through the feed metal arc 4 and then output from the other end of the sensor through the same feed structure.
The metal grating 2 on the metal ring 1 and the trapezoidal connecting metal block 3 can form an equivalent medium, and after excitation is applied through the feed metal arc 4 and the fifty-ohm microstrip line 5, a local artificial surface plasmon can be formed. At resonance, the surface current on the sensor structure flows along a circular trajectory when the circumference of the circle is equal to an integer multiple of the wavelength of the surface wave, i.e. when the circumference of the circle is equal to an integer multiple of the wavelength of the surface wave
Then, standing waves can be formed to generate resonance. Wherein the content of the first and second substances,
is the equivalent radius of the surface current,
is the equivalent wavelength of the surface wave.
As shown in FIG. 2, the scattering parameters are simulated after applying an excitation source at signal pad 6 and first and second ground pads 7, 8
Appear
、
、
Three resonance modes are a dipole resonance mode, a quadrupole resonance mode and a hexapole resonance mode respectively, the resonance frequencies are 72.1GHz, 129.2 GHz and 160.56 GHz respectively, the resonance intensities are-3.3 dB, -4.3dB and-11.3dB respectively, and the Q values are 25, 47 and 64 respectively.
As shown in FIG. 3, local artificial surface plasmon modes consisting of a metal ring 1, a metal grating 2 and a trapezoidal connecting metal block 3 can be observed at each resonance mode shown in FIG. 2, and are respectively dipoles
Quadrupole, quadrupole
And hexa-pole
Three resonance modes, wherein obvious phase inversion phenomenon in the grating open pore structure can be observed, which is beneficial to improving the resonance quality factor.
Example 2: embodiment 2 is a sensing application of an artificial surface plasmon-based on-chip resonant sensor of the present invention.
As shown in fig. 4, the microstrip line antenna comprises a metal ring 1 at the center, a metal grating 2, a trapezoid connecting metal block 3, a feed metal arc 4, a fifty-ohm microstrip line 5, a signal pad 6, a first ground pad 7, a second ground pad 8, a photoresist 9, a substrate 10 and a metal layer 11; the metal grating is arranged on the inner side of the metal ring 1, the tail ends of the metal gratings 2 are connected together in pairs through trapezoidal connecting metal blocks 3, and two feed metal arcs 4, fifty-ohm microstrip lines 5, signal pads 6, a first grounding pad 7 and a second grounding pad 8 are symmetrically distributed on the left side and the right side of the metal ring 1; two metal columnar first grounding pads 7 and second grounding pads 8 penetrate through the photoresist 9 and the substrate 10 to be connected with a metal layer 11, other metal structures are arranged on the upper portion of the photoresist 9, the substrate 10 is arranged on the lower portion of the photoresist 9, the metal layer 11 is arranged on the lower portion of the substrate 10, and the metal layer 11 is used as a metal structure ground covering the back face of the whole structure; the sensor is similar to the sensor in the embodiment 1, and the difference is that the sample 12 to be measured is introduced, and the sample 12 to be measured is tightly attached to the metal ring 1, the metal grating 2, the trapezoidal connecting metal block 3 and the feeding metal arc 4.
By changing the electromagnetic characteristics such as the dielectric constant of the sample 12 to be measured, the change of the surrounding environment of the sensor can be simulated, the frequency point of the resonance mode is shifted, and the sensitivity of the sensor to the sample to be measured can be calculated
And sensitivity value
(ii) a Wherein the sensitivity is
，
Wherein
Is the frequency offset of the frequency point,
refractive index change, which can be expressed as
As the dielectric constant of the sample, the dielectric constant,
3dB bandwidth for the resonance peak.
The sensor is very sensitive to a sample to be detected, and can realize a resonator function of a terahertz high Q value on a sensor plane structure or a sensor function of the terahertz high Q value high sensitivity. The sensor can work in microwave, millimeter wave and terahertz wave bands through equal scaling, and the sensor structure can realize sensor design in different frequency ranges through parameter design and optimization in semiconductor processes such as a PCB substrate, gallium arsenide and indium phosphide.
As shown in fig. 5, when the dielectric constant of the sample 12 to be measured changes, the resonance mode remains unchanged, the resonance frequency regularly shifts, and as the dielectric constant of the sample 12 to be measured increases, the resonance frequency point also shifts in red. Dipole when dielectric constant is changed from 4 to 7
Quadrupole with resonant frequency shift of 1.96GHz
Six-pole antenna with resonance frequency shifted by 5.6GHz
The resonance frequency shifts by 12.6GHz; dipole
Is/are as follows
Is 0.99
Four poles
Is/are as follows
Is 2.9
Six poles
Is
Is 5.92
. Dipole when dielectric constant is changed from 7 to 10
Quadrupole with resonant frequency shifted by 1.68GHz
Six-pole with resonance frequency shifted by 5.04GHz
The resonance frequency shifts by 10.08GHz; dipole
Is/are as follows
Is 1.01
Four poles
Is/are as follows
Is 3.2
Six poles
Is
Is 7.05
The sensing detection sensitivity value reaches a very high level in the high-frequency terahertz range.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (7)
1. An on-chip resonant sensor based on artificial surface plasmons is characterized by comprising a metal ring (1), a metal grating (2), a trapezoidal connecting metal block (3), a feed metal arc (4), a fifty-ohm microstrip line (5), a signal pad (6), a first grounding pad (7) and a second grounding pad (8), photoresist (9), a substrate (10) and a metal layer (11); the sensor comprises a sensor body, a metal ring (1), a metal grating (2), trapezoidal connecting metal blocks (3), a metal grating (2) and a metal grating sensor, wherein the metal ring (1) is positioned in the middle of the sensor body, the metal grating (2) is arranged on the inner side of the metal ring (1), the outer end of the metal grating (2) is connected with the inner side of the metal ring (1), and the inner ends of the metal grating (2) are connected together in pairs through the trapezoidal connecting metal blocks (3); feed metal arcs (4) are symmetrically distributed on the left side and the right side outside the metal circular ring (1), and the feed metal arcs (4) are connected with the signal bonding pad (6) through fifty-ohm microstrip lines (5); the first grounding pad (7) and the second grounding pad (8) are respectively positioned at two sides of the signal pad (6) and connected with the metal layer (11) through the photoresist (9) and the substrate (10);
on the layer structure, a metal ring (1), a metal grating (2), a trapezoidal connecting metal block (3), a feed metal arc (4), a fifty ohm microstrip line (5) and a signal pad (6) are arranged on the upper part of a photoresist (9), a substrate (10) is arranged on the lower part of the photoresist (9), a metal layer (11) is arranged on the lower part of the substrate (10), and the metal layer (11) is used as a metal structure ground covering the back surface of the whole structure;
the inner end of the metal grating (2) extends towards the direction of the circle center and is periodically arranged along the inner circumference of the metal ring (1);
the trapezoid connecting metal blocks (3) are connected between two adjacent metal gratings (2) at intervals, and the inner ends of the two adjacent metal gratings (2) are connected together, so that a trapezoid hole is formed between the two adjacent metal gratings (2) and the trapezoid connecting metal blocks (3) in the inner side of the metal ring (1);
the feed metal arc (4) is positioned on the outer side of the metal circular ring (1) and a gap is reserved, and the arc of the feed metal arc (4) corresponds to the outer circumference of the metal circular ring (1).
2. The artificial surface plasmon based on chip resonance sensor according to claim 1, wherein a fifty ohm microstrip line (5) outside the feed metal arc (4) has its length direction arranged along the diameter direction of the metal ring (1).
3. The artificial surface plasmon based on chip resonance type sensor according to claim 1, wherein the metal ring (1), the metal grating (2) and the trapezoidal connecting metal block (3) increase the resonance frequency by reducing the diameter of the metal ring (1) and the length of the metal grating (2); through increasing the trapezoidal hole area between metal ring (1), metal grating (2) and trapezoidal connection metal piece (3), improve resonance intensity and resonance Q value.
4. The artificial surface plasmon based on-chip resonant sensor according to claim 1, wherein the metal ring (1), the metal grating (2), the trapezoidal connecting metal block (3) and the feed metal arc (4) are provided with a sample (12) to be measured on the upper surface thereof, and the change of the dielectric constant of the sample (12) to be measured can shift the frequency point of the resonant mode, thereby calculating the sensitivity S (f) and the sensitivity FoM of the resonant sensor to the change of the sample to be measured; wherein
Wherein, delta f is the frequency offset of the resonance frequency point, delta n is the refractive index change and the refractive index
ε is the dielectric constant of the sample,. DELTA.f 3dB Δ f, which is the 3dB bandwidth of the resonance peak.
5. The artificial surface plasmon based on chip resonance type sensor according to claim 1, wherein the fifty ohm microstrip line (5) has a section of gradually changing width through a broken line at the end, and the section of gradually changing width is connected with the signal pad (6) until the width is the same.
6. The artificial surface plasmon based on chip resonance sensor according to claim 1, wherein the feeding metal arc (4) changes its length, width and distance from the metal ring (1) to adjust the feeding efficiency, thereby regulating the resonance strength and quality factor of the resonance mode.
7. The artificial surface plasmon based on chip resonance type sensor according to claim 1, wherein the first ground pad (7) and the second ground pad (8) are metal columnar structures, a gap is formed between the first ground pad and the signal pad (6), the upper surfaces of the first ground pad (7) and the second ground pad (8) are flush with the upper surface of the signal pad (6), and the lower surfaces of the first ground pad and the second ground pad are connected with the metal layer (11).
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| CN105738324A (en) * | 2016-02-21 | 2016-07-06 | 上海大学 | Grooved annular structure sensor based on microstrip line excitation |
| CN110364793A (en) * | 2019-06-13 | 2019-10-22 | 中国人民解放军国防科技大学 | Hybrid SIW and SLSP structure broadband cavity filter |
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| JP4649468B2 (en) * | 2007-12-20 | 2011-03-09 | 日本航空電子工業株式会社 | Surface plasmon sensor |
| CN106469855B (en) * | 2015-08-20 | 2021-01-15 | 深圳光启高等理工研究院 | Terahertz metamaterial |
| US10551334B1 (en) * | 2018-08-09 | 2020-02-04 | William N. Carr | Impedance spectrometer with metamaterial radiative filter |
| CN109085668B (en) * | 2018-08-01 | 2021-04-20 | 中国航空工业集团公司雷华电子技术研究所 | Localized surface plasmon resonator |
| CN110165346B (en) * | 2019-04-29 | 2021-07-27 | 东南大学 | Reconfigurable filter based on open-loop artificial local surface plasmon |
| CN113097035B (en) * | 2021-03-05 | 2021-12-28 | 北京大学 | Artificial local surface plasmon cyclotron electronic exciter and implementation method thereof |
| CN113991274B (en) * | 2021-12-24 | 2022-03-22 | 东南大学 | High Q value resonator based on artificial surface plasmon |
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| CN105738324A (en) * | 2016-02-21 | 2016-07-06 | 上海大学 | Grooved annular structure sensor based on microstrip line excitation |
| CN110364793A (en) * | 2019-06-13 | 2019-10-22 | 中国人民解放军国防科技大学 | Hybrid SIW and SLSP structure broadband cavity filter |
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