CN113991315B - On-chip quadrilateral resonator based on artificial surface plasmon - Google Patents
On-chip quadrilateral resonator based on artificial surface plasmon Download PDFInfo
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- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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Abstract
The invention provides an on-chip quadrilateral resonator based on artificial surface plasmons, which is produced by adopting an on-chip process design and consists of an inner ring resonator and an outer ring resonator. The outer ring resonator metal grating is connected to the quadrilateral metal outer ring and extends inwards for a certain distance, the inner ring resonator metal grating is connected to the quadrilateral metal inner ring and extends outwards for a certain distance, the extension length of the metal grating connected with the outer ring is gradually reduced from the middle to two sides, and the resonator is excited by the microstrip line and the impedance matching branch in a coupling mode. By adjusting the structural parameters of the resonator and the positions and the number of the resonator in the chip structure, the frequency point, the intensity and the Q value of each resonance mode can be adjusted. The resonator has the advantages of simple structure, high resonance strength, high quality factor and strong field binding property, accords with various chip process design rules of CMOS, gallium arsenide, indium phosphide and the like, and can realize a high-Q-value resonator of microwave bands, millimeter wave bands and terahertz wave bands by scaling in equal proportion.
Description
Technical Field
The invention relates to an on-chip process quadrilateral resonator, in particular to an on-chip quadrilateral coupling resonator based on artificial surface plasmons.
Background
The semiconductor industry develops to the present, the restriction of the traditional microwave circuit structure on the integration level and the high-frequency performance of a chip is more and more obvious, and the development of the microwave integrated circuit urgently needs a new structure with the performance capable of breaking through the restriction of the traditional microwave circuit and adds new vitality. With the continuous improvement of the attention of related fields of metamaterials, more and more research researchers begin to research and explore various metamaterials, and various specific electromagnetic materials begin to be gradually applied to various related subject fields.
The surface plasmon is an electromagnetic oscillation mode existing at an interface between metal and a medium in the field of metamaterials, has the excellent characteristics of strong field constraint, short working wavelength, high-frequency cutoff and the like, but the surface plasmon in the nature exists in high-frequency bands such as near infrared bands and optical bands. The design and the proposal of the artificial surface plasmon extend the concept of the artificial surface plasmon to low-frequency bands such as microwave and millimeter waves, and the excellent performance displayed by the surface plasmon can be simulated through the artificially designed structural unit. The local artificial surface plasmon is one kind of artificial surface plasmon, has the excellent characteristics of compact structure, small electrical size and the like, can present the resonance characteristic of high quality factor through structural design, and has wide application in the fields of resonators, filters, sensors and the like.
More and more researchers at present try to apply the artificial surface plasmon structure to the semiconductor integrated circuit, so that the constraint of the traditional microwave integrated circuit is broken, the semiconductor integrated circuit is made to have higher frequency band, smaller size and more excellent performance, the crosstalk loss of the integrated circuit is reduced, and the integration level is improved.
Disclosure of Invention
The technical problem is as follows: the invention aims to provide an on-chip quadrilateral resonator based on artificial surface plasmons, which adopts the design concept of coupling of an inner resonant ring and an outer resonant ring, applies an artificial surface plasmonic structure to chip processes such as CMOS (complementary metal oxide semiconductor), gallium arsenide and indium phosphide and realizes a high-frequency resonator with small size, high quality factor and easy integration.
The technical scheme is as follows: the invention relates to an on-chip quadrilateral resonator based on artificial surface plasmons, which comprises a square metal outer ring resonator, a square metal inner ring resonator, an impedance matching stub and a fifty-ohm microstrip line; the square metal outer ring resonator comprises a square metal outer ring and metal outer ring gratings, wherein the metal outer ring gratings are connected to four edges in the square metal outer ring; the square metal inner ring resonator comprises a square metal inner ring and metal inner ring gratings, and the metal inner ring gratings are connected to four edges outside the square metal inner ring; the square metal inner ring resonator is positioned in the square metal outer ring resonator, and the metal outer ring grating and the metal inner ring grating are arranged in a staggered mode, so that a resonator structure is formed; two impedance matching branches are symmetrically distributed on two sides outside the square metal outer ring resonator, the outer side of each impedance matching branch is connected with a fifty-ohm microstrip line, and a metal plane is covered below the whole on-chip quadrilateral resonator structure and serves as a metal structure ground.
Wherein the content of the first and second substances,
the outer end of the metal outer ring grating is connected to the inner sides of the four edges of the square metal outer ring, and the inner end of the metal outer ring grating is perpendicular to the side edge of the square metal outer ring and extends inwards for a certain distance.
The length of the metal outer ring grating is symmetrically and progressively reduced from the center of the side length to two sides on the inner side of the square metal outer ring, so that the metal outer ring gratings connected to two adjacent sides of the square metal outer ring are prevented from being contacted with each other.
The inner end of the metal inner ring grating is connected to the outer sides of the four sides of the square metal inner ring, the outer end of the metal inner ring grating is perpendicular to the side edge of the square metal inner ring and extends outwards for a distance, and the lengths of the gratings of the metal inner ring grating are the same.
The middle part of the impedance matching branch is connected with the inner end of the fifty-ohm microstrip line to form a feed structure, the impedance matching branches are symmetrically distributed on two sides outside the square metal outer ring resonator, and a section of interval with adjustable width is arranged between the impedance matching branches and the square metal outer ring resonator; and an external signal enters one end of the resonator structure through the fifty-ohm microstrip line and the impedance matching stub in a coupling mode, and the other end of the resonator structure is symmetrically coupled out of the impedance matching stub and is led out through the fifty-ohm microstrip line.
The side length of the square metal outer ring, the number, the length and the width of the metal outer ring gratings and the grating interval are adjustable; the frequency point, the intensity and the resonance quality factor of each resonance mode can be adjusted by changing the structural parameters.
The side length of the square metal inner ring, the number, the length and the width of the metal inner ring gratings and the grating interval are adjustable; the frequency point, the intensity and the resonance quality factor of each resonance mode can be adjusted by changing the structural parameters.
The length, the width and the interval between the impedance matching branch and the square metal outer ring are changed, so that the resonance strength and the resonance quality factor of each resonance mode can be adjusted.
The square metal outer ring resonator and the square metal inner ring resonator can be positioned on the same layer and can realize coupling resonance on different layers by utilizing a multi-layer metal structure of an on-chip process.
Has the advantages that: the on-chip quadrilateral resonator based on the artificial surface plasmon has the following beneficial effects:
1. the resonator has small electric size, two square annular artificial surface plasmon resonance structures which are mutually coupled are introduced into the resonator, the path length of surface current is compressed to be far smaller than the size of the resonator, and the size of the resonator can reach about one fifth of thirteen points of working wavelength.
2. The invention adopts the local artificial surface plasmon structure as the resonator structure, greatly improves the constraint capacity to the electromagnetic field, reduces the crosstalk loss of the integrated circuit, is beneficial to enhancing the resonance strength and improves the integration level.
3. The invention accords with the design rule of semiconductor process, the traditional artificial surface plasmon polariton structure is round, the invention is square, accords with the design rule of CMOS, gallium arsenide, indium phosphide and other processes, and realizes the excellent performance of the artificial surface plasmon polariton resonator in the chip process.
4. The invention has high resonance quality factor under the condition of high frequency, eight resonance modes m1-m8 work at 175.6GHz, 266.8GHz, 455.1GHz, 548GHz, 626.6GHz, 731GHz, 897.1GHz and 976.4GHz respectively in a CMOS process, wherein Q values are m 1: 21. m 2: 27.7, m 3: 23.2, m 4: nul, m 5: 25.3, m 6: 36.6, m 7: 47.3 and m 8: 31, much higher than other existing passive resonator structures of the same type.
5. The invention has simple structure and easy integration, the inner and outer resonance rings can work under different metal layers of a semiconductor, the same-layer coupling or interlayer coupling is realized by utilizing the advantages of multilayer metals in the semiconductor process, and the inner and outer resonance rings can work in microwave, millimeter wave and terahertz frequency bands by equal scaling.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of the outer ring resonator structure of the present invention;
FIG. 3 is a schematic diagram of the inner ring resonator structure of the present invention;
FIG. 4 is a scattering parameter of the present invention
A simulation result schematic diagram;
fig. 5 is a diagram illustrating the measurement results of the near-field electric field at eight resonance frequency points (m 1, m2, m3, m4, m5, m6, m7, m 8) in fig. 4 according to the present invention.
The figure shows that: the device comprises a square metal outer ring resonator 1, a square metal inner ring resonator 2, an impedance matching branch 3, a fifty-ohm microstrip line 4, a square metal outer ring 11, a metal outer ring grating 12, a square metal inner ring 21 and a metal inner ring grating 22.
Detailed Description
The present invention is further illustrated by the following specific examples, which are intended to be illustrative, not limiting and are not intended to limit the scope of the invention.
As shown in fig. 1, the on-chip quadrilateral resonator based on artificial surface plasmons of the present invention includes a square metal outer ring resonator 1, a square metal inner ring resonator 2, an impedance matching stub 3, and a fifty-ohm microstrip line 4; the square metal outer ring resonator 1 comprises a square metal outer ring 11, a metal outer ring grating 12 and a metal outer ring grating 12
Are connected on four sides in the square metal outer ring 11; the square metal inner ring resonator 2 comprises a square metal inner ring 21 and metal inner ring gratings 22, and the metal inner ring gratings 22 are connected to four edges outside the square metal inner ring 21; the square metal inner ring resonator 2 is positioned in the square metal outer ring resonator 1, and the metal outer ring gratings 12 and the metal inner ring gratings 22 are arranged in a staggered mode, so that a resonator structure is formed; two impedance matching branches 3 are symmetrically distributed on two sides outside the square metal outer ring resonator 1, the outer side of each impedance matching branch 3 is connected with a fifty-ohm microstrip line 4, and a metal plane is covered below the whole on-chip quadrilateral resonator structure and serves as a metal structure ground. Electromagnetic signals are introduced into the system through the fifty-ohm microstrip line and are coupled into the resonator structure through the impedance matching stub 3.
As shown in fig. 2, which is a detailed view of the structure of the square metal outer ring resonator 1, one end of the metal outer ring grating 12 is connected inside the square metal outer ring 11, and the other end of the metal outer ring grating extends inwards for a certain distance perpendicular to the side of the square metal outer ring 11, and due to the limitation of the square metal outer ring 11, the length of the metal outer ring grating 12 is symmetrically and progressively reduced from the center of the side length to the two sides, so that the metal gratings connected on the two adjacent sides of the square metal outer ring 11 are ensured not to contact.
As shown in fig. 3, which is a detailed view of the structure of the square metal inner ring resonator 2, one end of the metal inner ring grating 22 is connected to the outside of the square metal inner ring 21, and the other end extends outwards for a distance perpendicular to the side of the square metal inner ring 21. Since the square metal inner ring 21 is much smaller than the square metal outer ring 11, the metal to which the square metal inner ring resonator 2 is connected
The number of the inner ring gratings 22 is small, and the grating length can be kept unchanged.
The resonator has adjustable structural parameters, and the structural parameters comprise the side length and the ring width of the square metal outer ring 11 and the square metal inner ring 21, the number, the length, the width and the interval of the metal outer ring gratings 12 and the metal inner ring gratings 22, the interval and the staggered length between the metal outer ring gratings 12 and the metal inner ring gratings 22, the length and the width of the impedance matching branch 3 and the fifty ohm microstrip line 4, and the distance between the impedance matching branch 3 and the square metal outer ring 11. By changing
The frequency, strength and Q value of each resonance mode can be adjusted according to the parameters.
The metal outer ring grating 12 and the metal inner ring grating 22 connected to the square metal outer ring 11 and the square metal inner ring 21 can form an equivalent medium, and can form a surface plasmon mode after coupling feed through the microstrip line and the impedance matching branch, and when the path of the surface current on the resonator structure is equal to the integral multiple of the wavelength of the surface wave, standing waves can be formed, and resonance is generated.
The square metal outer ring resonator 1 and the square metal inner ring resonator 2 are mutually staggered and coupled, and when the resonance modes of the two resonance structures are the same and the resonance phases are opposite, the field modes are mutually superposed, so that a hybrid resonance mode with a higher Q value can be formed.
The resonant circuit is designed aiming at the semiconductor integrated circuit process, and the structure line width, the line spacing, the metal area and the like all accord with the semiconductor process design rules of CMOS, gallium arsenide, indium phosphide and the like. Under different chip technologies, the advantages of multilayer metal in the technology can be exerted, the inner ring resonator and the outer ring resonator are designed in the same or different metal layers allowed by the technology, a single-layer coupling structure and a multilayer coupling structure are designed, and coupling resonance based on artificial surface plasmons under terahertz frequency bands is realized under different technologies.
FIG. 4 shows the simulated scattering parameters of the resonator implemented in CMOS process
The results are shown schematically, eight resonant modes m1-m8 operating at 175.6GHz, 266.8GHz, 455.1GHz, 548GHz, 626.6GHz, 731GHz, 897.1GHz, and 976.4GHz, respectively, with Q values m 1: 21. m 2: 27.7, m 3: 23.2, m 4: nul, m 5: 25.3, m 6: 36.6, m 7: 47.3 and m 8: 31. under the CMOS process, the on-chip quadrilateral resonator based on the artificial surface plasmon can reduce the m1 mode resonance frequency to 175.6GHz under the diameter of 126um, and the wavelength of the on-chip quadrilateral resonator is compressed by 13.5 times.
As shown in fig. 5, the near-field electric field distribution diagram of eight resonant modes of the resonator realized in the CMOS process of the present invention can clearly observe different resonant characteristics of different modes, and particularly can clearly observe that the modes between the inner ring resonator and the outer ring resonator are the same and the phases are opposite, thereby exhibiting hybrid resonant characteristics, so that the properties of the artificial surface plasmon resonator are completely reflected.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (7)
1. The utility model provides a quadrilateral resonator on piece based on artificial surface plasmon which characterized in that: the resonator comprises a square metal outer ring resonator (1), a square metal inner ring resonator (2), an impedance matching stub (3) and a fifty-ohm microstrip line (4); the square metal outer ring resonator (1) comprises a square metal outer ring (11) and metal outer ring gratings (12), wherein the metal outer ring gratings (12) are connected to four edges in the square metal outer ring (11); the square metal inner ring resonator (2) comprises a square metal inner ring (21) and metal inner ring gratings (22), wherein the metal inner ring gratings (22) are connected to four edges outside the square metal inner ring (21); the square metal inner ring resonator (2) is positioned in the square metal outer ring resonator (1), and the metal outer ring gratings (12) and the metal inner ring gratings (22) are arranged in a staggered mode, so that a resonator structure is formed; two impedance matching branches (3) are symmetrically distributed on two sides outside the square metal outer ring resonator (1), the outer side of each impedance matching branch (3) is connected with a fifty-ohm microstrip line (4), and a metal plane is covered below the whole on-chip quadrilateral resonator structure and serves as a metal structure ground;
the outer end of the metal outer ring grating (12) is connected to the inner sides of four sides of the square metal outer ring (11), and the inner end of the metal outer ring grating (12) is perpendicular to the side edge of the square metal outer ring (11) and extends inwards for a certain distance;
the length of the metal outer ring grating (12) is symmetrically and progressively reduced from the center of the side length to two sides on the inner side of the square metal outer ring (11), so that the metal outer ring gratings (12) connected to two adjacent sides of the square metal outer ring (11) are prevented from being contacted with each other.
2. The artificial surface plasmon based on-chip quadrilateral resonator as claimed in claim 1, wherein the inner end of the metal inner ring grating (22) is connected to the outer side of four sides of the square metal inner ring (21), the outer end of the metal inner ring grating (22) is perpendicular to the side of the square metal inner ring (21) and extends outwards for a distance, and the lengths of the gratings of the metal inner ring grating (22) are the same.
3. The on-chip quadrilateral resonator based on artificial surface plasmons of claim 1, characterized in that the middle part of the impedance matching stub (3) is connected with the inner end of the fifty-ohm microstrip line (4) to form a feed structure, the impedance matching stub (3) is symmetrically distributed on two sides outside the square metal outer ring resonator (1), and a section of interval with adjustable width is arranged between the impedance matching stub and the square metal outer ring resonator (1); external signals enter one end of the resonator structure through the fifty-ohm microstrip line (4) and then the impedance matching stub (3) in a coupling mode, the impedance matching stub (3) is symmetrically coupled out of the other end of the resonator structure, and the external signals are led out through the fifty-ohm microstrip line (4).
4. The artificial surface plasmon based on-chip quadrilateral resonator as claimed in claim 1, characterized in that the side length of the square metal outer ring (11), the number of the metal outer ring gratings (12), the length, the width and the grating interval are adjustable; the frequency point, the intensity and the resonance quality factor of each resonance mode can be adjusted by changing the structural parameters.
5. The artificial surface plasmon based on-chip quadrilateral resonator of claim 1, characterized in that the side length of the square metal inner ring (21), the number of the metal inner ring gratings (22), the length, the width and the grating interval are adjustable; the frequency point, the intensity and the resonance quality factor of each resonance mode can be adjusted by changing the structural parameters.
6. The artificial surface plasmon-based on-chip quadrilateral resonator of claim 1, wherein the impedance matching branches (3), varying their length, width and spacing from the square metal outer ring (11), can adjust the resonance strength and resonance quality factor of each resonance mode.
7. The artificial surface plasmon based on-chip quadrilateral resonator according to claim 1, wherein the square metal outer ring resonator (1) and the square metal inner ring resonator (2) can be located on the same layer or can realize coupling resonance on different layers by using a multi-layer metal structure of an on-chip process.
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| CN202111607960.0A CN113991315B (en) | 2021-12-27 | 2021-12-27 | On-chip quadrilateral resonator based on artificial surface plasmon |
| PCT/CN2022/095581 WO2023123853A1 (en) | 2021-12-27 | 2022-05-27 | On-chip quadrilateral resonator based on spoof surface plasmon polaritons |
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| CN114623850B (en) * | 2022-03-15 | 2024-01-26 | 东南大学 | Resonance enhanced passive coupling sensing structure |
| CN114883771B (en) * | 2022-05-26 | 2024-02-02 | 东南大学 | On-chip passive quadrilateral split coupling resonator based on artificial surface plasmon |
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| CN102394328A (en) * | 2011-07-19 | 2012-03-28 | 西安电子科技大学 | Microstrip bimodule band-pass filter based on DGS (defected ground structure) square-ring resonator |
| CN110165346A (en) * | 2019-04-29 | 2019-08-23 | 东南大学 | A kind of reconfigurable filter based on the artificial local surface phasmon of open loop |
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| US6792299B2 (en) * | 2001-03-21 | 2004-09-14 | Conductus, Inc. | Device approximating a shunt capacitor for strip-line-type circuits |
| CN103779639B (en) * | 2014-01-15 | 2015-11-18 | 西安理工大学 | The square ring bimodulus double frequency filter that minor matters load |
| CN104810579A (en) * | 2015-05-12 | 2015-07-29 | 中国矿业大学 | Tunable bandstop filter based on artificial surface plasmon |
| CN106486729B (en) * | 2016-09-29 | 2021-05-04 | 东南大学 | Compact closed-loop resonator based on artificial surface plasmon |
| JP6998595B2 (en) * | 2018-03-05 | 2022-01-18 | 国立大学法人京都工芸繊維大学 | Orbital angular momentum mode Pseudo-progressive wave resonator and orbital angular momentum antenna device |
| KR102098861B1 (en) * | 2018-03-30 | 2020-04-08 | 국방과학연구소 | A device and a method for generating light carrying orbital angular momentum |
| CN109309286B (en) * | 2018-08-23 | 2021-06-08 | 南京邮电大学 | Polarization-insensitive ultra-wideband terahertz wave absorber with multilayer structure |
| CN110658240A (en) * | 2019-10-29 | 2020-01-07 | 贵州民族大学 | Toxic and harmful gas detection sensor and detection method |
| CN111129685B (en) * | 2019-12-31 | 2021-03-19 | 东南大学 | Artificial plasmon resonator with deep subwavelength and high quality factor |
| CN111224208B (en) * | 2020-01-10 | 2021-03-19 | 东南大学 | Sub-wavelength orbital angular momentum resonator |
| CN113991315B (en) * | 2021-12-27 | 2022-03-11 | 东南大学 | On-chip quadrilateral resonator based on artificial surface plasmon |
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| CN102394328A (en) * | 2011-07-19 | 2012-03-28 | 西安电子科技大学 | Microstrip bimodule band-pass filter based on DGS (defected ground structure) square-ring resonator |
| CN110165346A (en) * | 2019-04-29 | 2019-08-23 | 东南大学 | A kind of reconfigurable filter based on the artificial local surface phasmon of open loop |
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