CN115000218A - Ultrathin crystalline silicon solar cell and preparation method thereof - Google Patents
Ultrathin crystalline silicon solar cell and preparation method thereof Download PDFInfo
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- CN115000218A CN115000218A CN202210623080.0A CN202210623080A CN115000218A CN 115000218 A CN115000218 A CN 115000218A CN 202210623080 A CN202210623080 A CN 202210623080A CN 115000218 A CN115000218 A CN 115000218A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
- 239000010703 silicon Substances 0.000 claims abstract description 100
- 229910001080 W alloy Inorganic materials 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000005498 polishing Methods 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 238000002844 melting Methods 0.000 claims abstract description 11
- 230000008018 melting Effects 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- 239000006004 Quartz sand Substances 0.000 claims abstract description 5
- 239000000571 coke Substances 0.000 claims abstract description 5
- 238000010891 electric arc Methods 0.000 claims abstract description 5
- 238000000746 purification Methods 0.000 claims abstract description 5
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 claims description 27
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 27
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 27
- 239000002313 adhesive film Substances 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 18
- 238000003723 Smelting Methods 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 7
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 6
- 239000005049 silicon tetrachloride Substances 0.000 claims description 6
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 6
- 239000005052 trichlorosilane Substances 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H01L31/042—PV modules or arrays of single PV cells
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Abstract
The invention relates to the technical field of photovoltaics, and discloses an ultrathin crystalline silicon solar cell and a preparation method thereof, wherein the ultrathin crystalline silicon solar cell comprises the following steps: the method comprises the following steps: preparing coarse silicon with lower purity in an electric arc furnace by using quartz sand and coke, purifying the coarse silicon by an industrial purification method to prepare high-purity monocrystalline silicon for later use, selecting a tungsten alloy plate with larger surface area, and polishing one side surface of the tungsten alloy plate until the tungsten alloy plate is in a mirror smooth state; and melting high-purity monocrystalline silicon in the matrix, placing the monocrystalline silicon in a melting furnace, and locking the polished tungsten alloy plate by using a special lifting clamp. According to the invention, the tungsten alloy plate with one polished surface meeting the same precision requirement as the silicon film is adopted, so that the tungsten alloy plate is close to the surface of the molten silicon and is in contact with the smooth surface of the tungsten alloy plate, then the silicon film is precipitated by cooling and attached to the surface of the tungsten alloy plate, fine bubbles cannot exist on the surface of the tungsten alloy plate due to contact with air, only the other surface of the silicon film needs to be polished, and the manufacturing process and the cost are reduced.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to an ultrathin crystalline silicon solar cell and a preparation method thereof.
Background
At present, solar energy is inexhaustible renewable energy which is also clean energy, does not produce any environmental pollution and is effectively utilized by people; solar photovoltaic utilization is one of the most spotlighted projects in the most rapid and active research field in recent years, and therefore, solar cells are developed and developed, and the solar cells are mainly manufactured based on semiconductor materials.
Typical crystalline silicon solar cells are fabricated on high quality silicon wafers of thickness 350-450 μm, sawed from a pulled or cast silicon ingot. Therefore, more silicon materials are consumed actually, and a process capable of manufacturing an ultrathin silicon wafer is needed to save materials, so that the materials are saved.
In the prior art, an ultrathin silicon film is prepared by a liquid phase epitaxy method, the principle is that silicon is melted in a matrix, the temperature is reduced to precipitate a silicon film, the silicon film precipitated after the temperature is reduced is attached to the surface of the molten liquid, the upper layer of the silicon film is in direct contact with air, fine bubbles are easy to exist on the surface in the precipitation forming process, the surface quality of the silicon film is affected, and extra polishing is needed to increase the process and the cost. Therefore, an ultrathin crystalline silicon solar cell and a preparation method thereof are provided.
Disclosure of Invention
The invention aims to provide an ultrathin crystalline silicon solar cell and a preparation method thereof, wherein a tungsten alloy plate with one polished surface meeting the precision requirement of silicon film polishing is adopted to be close to the surface of molten silicon and to be in contact with the smooth surface of the tungsten alloy plate, then the silicon film is separated out by cooling and attached to the surface of the tungsten alloy plate, fine bubbles cannot exist on the surface of the tungsten alloy plate due to the contact with air, only the other surface of the silicon film needs to be polished, the manufacturing process and the cost are reduced, and the problems in the background art are solved.
In order to achieve the purpose, the invention provides the following technical scheme: an ultrathin crystalline silicon solar cell and a preparation method thereof comprise a frame, a crystalline silicon cell piece, an EVA adhesive film, a back film and glass; a clamping groove is formed in the inner portion of the frame in a surrounding mode, and the crystalline silicon battery piece, the EVA adhesive film, the back film and the glass are clamped in the clamping groove in the inner ring of the frame; the EVA adhesive film is provided with two layers, the two layers of EVA adhesive films are respectively attached to two surfaces of the crystalline silicon battery piece, a back film is attached to the surface of the EVA adhesive film on one surface of the crystalline silicon battery piece, and glass is attached to the surface of the EVA adhesive film on the other surface of the crystalline silicon battery piece; the edge surfaces of the glass and the back film are abutted against the surfaces of the clamping grooves on the inner side of the frame.
In a preferred embodiment of the present invention, a junction box is attached and fixed to the middle of the surface of the back film, and wires inside the junction box are connected to the crystalline silicon battery cell by welding.
As a preferred embodiment of the present invention, the method comprises the following steps:
the method comprises the following steps: preparing coarse silicon with lower purity in an electric arc furnace by using quartz sand and coke, purifying the coarse silicon by an industrial purification method to prepare high-purity monocrystalline silicon for later use, selecting a tungsten alloy plate with larger surface area, and polishing one side surface of the tungsten alloy plate until the tungsten alloy plate is in a mirror smooth state;
step two: melting high-purity monocrystalline silicon in the matrix, placing the fused monocrystalline silicon in a smelting furnace, locking the polished tungsten alloy plate through a special lifting clamp, and placing the silicon surface with the smooth surface parallel to the molten state right above the smelting furnace;
step three: controlling the descending height of the tungsten alloy plate to be close to the molten silicon surface, enabling the smooth surface of the tungsten alloy plate to be in contact with the molten silicon surface, utilizing a smelting furnace to carry out cooling treatment on the molten silicon, further enabling the molten silicon surface to separate out a silicon film and to be adsorbed on the smooth tungsten alloy plate surface, then enabling the tungsten alloy plate to be driven to rise and carry the silicon film to rise, arranging a base at the bottom of the tungsten alloy plate, and enabling the formed silicon film to be separated from the tungsten alloy plate and fall to the base surface;
step four: polishing the other surface of the contact surface of the silicon film and the tungsten alloy plate to ensure that both surfaces of the silicon film are in a smooth state, and then processing the silicon film by adopting the technologies of surface texturing, emitter region passivation, partition doping and the like to prepare a crystalline silicon cell;
step five: after performance detection is carried out on the crystalline silicon battery piece, the qualified crystalline silicon battery piece is taken to be packaged, so that the crystalline silicon battery piece is arranged between two layers of EVA (ethylene vinyl acetate) adhesive films, and is locked in a clamping groove of a frame through glass and a back film, and meanwhile, the crystalline silicon battery piece is welded with a junction box.
In a preferred embodiment of the invention, in the first step, the crude silicon is converted into volatile silicon tetrachloride or trichlorosilane which is easy to purify, then the silicon tetrachloride or trichlorosilane is purified by a rectification method, and the silicon is reduced by hydrogen in an electric furnace to obtain silicon with higher purity.
In a preferred embodiment of the present invention, in the first step, the tungsten alloy plate is polished by stepwise polishing, and the polishing precision is not lower than 1 μm.
As a preferred embodiment of the present invention, the melting temperature of silicon in the second step is 1600-1800 ℃.
As a preferred embodiment of the present invention, the temperature reduction in the third step is 1100-1300 ℃.
As a preferred embodiment of the present invention, the chemical formula of the crude silicon prepared in the first step is: SiO2+3C → SiC +2CO and 2SiC + SiO2 → 3Si +2CO, with heating.
In a preferred embodiment of the invention, the polishing precision in the fourth step is not less than 1 μm, and the silicon film is made into a crystalline silicon cell by one or more of surface texturing, emitter passivation and zone doping.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the ultrathin crystalline silicon solar cell and the preparation method thereof, the tungsten alloy plate with one polished surface meeting the same precision requirement as that of silicon film polishing is adopted, the tungsten alloy plate is close to the surface of molten silicon and is in contact with the smooth surface of the tungsten alloy plate, then the silicon film is precipitated by cooling and attached to the surface of the tungsten alloy plate, fine bubbles cannot exist on the surface of the tungsten alloy plate due to contact with air, only the other surface of the silicon film needs to be polished, and the manufacturing process and the cost are reduced.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic overall structure diagram of an ultrathin crystalline silicon solar cell and a preparation method thereof according to the present invention;
FIG. 2 is a flow chart of the preparation of the ultrathin crystalline silicon solar cell and the preparation method thereof.
In the figure: 1. a frame; 2. a card slot; 3. a crystalline silicon cell; 4. an EVA adhesive film; 5. glass; 6. a back film; 7. a junction box.
Detailed Description
Referring to fig. 1-2, the present invention provides a technical solution: an ultrathin crystalline silicon solar cell and a preparation method thereof are disclosed, wherein the ultrathin crystalline silicon solar cell comprises a frame 1, a crystalline silicon cell piece 3, an EVA adhesive film 4, a back film 6 and glass 5; the inside of the frame 1 is provided with clamping grooves 2 in a surrounding manner, and the crystalline silicon battery piece 3, the EVA adhesive film 4, the back film 6 and the glass 5 are clamped in the clamping grooves 2 of the inner ring of the frame 1;
the EVA adhesive film 4 is provided with two layers, the two EVA adhesive films 4 are respectively attached to two surfaces of the crystalline silicon battery piece 3, a back film 6 is attached to the surface of the EVA adhesive film 4 on one surface of the crystalline silicon battery piece 3, and glass 5 is attached to the surface of the EVA adhesive film 4 on the other surface of the crystalline silicon battery piece 3;
the edge surfaces of the glass 5 and the back membrane 6 are abutted against the surface of the clamping groove 2 on the inner side of the frame 1.
In an optional embodiment, a junction box 7 is fixedly attached to the middle of the surface of the back film 6, and a wire inside the junction box 7 is connected to the crystallized silicon battery piece 3 by welding, in this embodiment (see fig. 1), the purpose of connecting the crystallized silicon battery piece 3 to a circuit is achieved through the junction box 7.
In an alternative embodiment, the method comprises the following steps:
the method comprises the following steps: preparing coarse silicon with lower purity in an electric arc furnace by using quartz sand and coke, purifying the coarse silicon by an industrial purification method to prepare high-purity monocrystalline silicon for later use, selecting a tungsten alloy plate with larger surface area, and polishing one side surface of the tungsten alloy plate until the tungsten alloy plate is in a mirror smooth state;
step two: melting high-purity monocrystalline silicon in the matrix, placing the fused monocrystalline silicon in a smelting furnace, locking the polished tungsten alloy plate through a special lifting clamp, and placing the silicon surface with the smooth surface parallel to the molten state right above the smelting furnace;
step three: controlling the descending height of the tungsten alloy plate to be close to the silicon surface in a molten state, enabling the smooth surface of the tungsten alloy plate to be in contact with the silicon surface in the molten state, utilizing a smelting furnace to carry out cooling treatment on the silicon in the molten state, further enabling the silicon surface in the molten state to separate out a silicon film and be adsorbed on the surface of the smooth tungsten alloy plate, then driving the tungsten alloy plate to be lifted and carrying the silicon film to be lifted, arranging a base at the bottom of the tungsten alloy plate, and enabling the formed silicon film to be separated from the tungsten alloy plate and fall to the surface of the base;
step four: polishing the other surface of the contact surface of the silicon film and the tungsten alloy plate to ensure that both surfaces of the silicon film are in a smooth state, and then processing the silicon film by adopting the technologies of surface texturing, emitter region passivation, partition doping and the like to prepare a crystalline silicon cell;
step five: after performance detection is carried out on the crystalline silicon battery piece, the qualified crystalline silicon battery piece is taken to be packaged, so that the crystalline silicon battery piece is arranged between the two layers of EVA adhesive films, and is locked in the clamping groove of the frame through glass and the back film, and meanwhile, welding connection of the crystalline silicon battery piece and the junction box is completed.
In an alternative embodiment, in the first step, the crude silicon is converted into volatile silicon tetrachloride or trichlorosilane which is easy to purify, then the silicon tetrachloride or trichlorosilane is purified by a rectification method, and the crude silicon is reduced by hydrogen in an electric furnace to obtain silicon with higher purity.
In an optional embodiment, in the first step, the tungsten alloy plate is polished by a step-by-step polishing mode, and the polishing precision is not lower than 1 μm.
In an alternative embodiment, the melting temperature of silicon in the second step is 1600-1800 ℃.
In an alternative embodiment, the temperature reduction temperature in the third step is 1100-.
In an alternative embodiment, the chemical formula of the crude silicon prepared in the first step is: SiO2+3C → SiC +2CO and 2SiC + SiO2 → 3Si +2CO, the reaction conditions are heating.
In an alternative embodiment, the polishing precision in the fourth step is not lower than 1 μm, and the silicon film is made into a crystalline silicon cell by one or more of surface texturing, emitter passivation and zone doping.
When the ultra-thin crystalline silicon solar cell and the preparation method thereof are implemented, firstly, quartz sand and coke are utilized to prepare coarse silicon with lower purity in an electric arc furnace, then the coarse silicon is purified by an industrial purification method to prepare high-purity monocrystalline silicon for standby, a tungsten alloy plate with larger surface area is selected, and one side surface of the tungsten alloy plate is polished until the tungsten alloy plate is in a mirror smooth state; melting high-purity monocrystalline silicon in the matrix, placing the matrix in a melting furnace, locking the polished tungsten alloy plate by a special lifting fixture, and placing the silicon surface with the smooth surface parallel to the molten state right above the melting furnace; then controlling the descending height of the tungsten alloy plate to be close to the silicon surface in the molten state, enabling the smooth surface of the tungsten alloy plate to be in contact with the silicon surface in the molten state, utilizing a smelting furnace to carry out cooling treatment on the silicon in the molten state, further enabling the silicon surface in the molten state to separate out a silicon film and be adsorbed on the surface of the smooth tungsten alloy plate, then driving the tungsten alloy plate to be lifted and carrying the silicon film to be lifted, arranging a base at the bottom of the tungsten alloy plate, and enabling the formed silicon film to be separated from the tungsten alloy plate and fall to the surface of the base; then, polishing the other surface of the contact surface of the silicon film and the tungsten alloy plate to ensure that both surfaces of the silicon film are in a smooth state, and then processing the silicon film by adopting the technologies of surface texturing, emitter region passivation, partition doping and the like to prepare a crystalline silicon cell; and finally, after the performance of the crystalline silicon battery piece is detected, the qualified crystalline silicon battery piece is taken for packaging treatment, so that the crystalline silicon battery piece is arranged between the two layers of EVA adhesive films, and is locked in the clamping groove of the frame through glass and the back film, and meanwhile, the crystalline silicon battery piece is welded with the junction box.
The ultrathin crystalline silicon solar cell comprises a frame 1, a clamping groove 2, a crystalline silicon cell piece 3, an EVA (ethylene vinyl acetate) adhesive film 4, glass 5, a back film 6 and a junction box 7, wherein all the components are universal standard components or components known by a person skilled in the art, and the structure and the principle of the ultrathin crystalline silicon solar cell can be known by the person skilled in the art through technical manuals or conventional experimental methods.
Claims (9)
1. An ultrathin crystalline silicon solar cell is characterized by comprising a frame (1), a crystalline silicon cell (3), an EVA (ethylene vinyl acetate) adhesive film (4), a back film (6) and glass (5); the inside of the frame (1) is provided with clamping grooves (2) in a surrounding manner, and the crystalline silicon battery piece (3), the EVA adhesive film (4), the back film (6) and the glass (5) are clamped in the clamping grooves (2) of the inner ring of the frame (1);
the EVA adhesive film (4) is provided with two layers, the two layers of EVA adhesive films (4) are respectively attached to two surfaces of the crystalline silicon battery piece (3), a back film (6) is attached to the surface of the EVA adhesive film (4) on one surface of the crystalline silicon battery piece (3), and glass (5) is attached to the surface of the EVA adhesive film (4) on the other surface of the crystalline silicon battery piece (3);
the edge surfaces of the glass (5) and the back film (6) are abutted against the surface of the clamping groove (2) on the inner side of the frame (1).
2. The ultra-thin crystalline silicon solar cell and the preparation method thereof according to claim 1, wherein: the middle part of the surface of the back film (6) is attached and fixed with a junction box (7), and wires inside the junction box (7) are connected with the crystalline silicon battery piece (3) in a welding mode.
3. The preparation method of the ultrathin crystal silicon solar cell applied to any one of claims 1-2 is characterized by comprising the following steps:
the method comprises the following steps: preparing coarse silicon with lower purity in an electric arc furnace by using quartz sand and coke, purifying the coarse silicon by an industrial purification method to prepare high-purity monocrystalline silicon for later use, selecting a tungsten alloy plate with larger surface area, and polishing one side surface of the tungsten alloy plate until the tungsten alloy plate is in a mirror smooth state;
step two: melting high-purity monocrystalline silicon in the matrix, placing the fused monocrystalline silicon in a smelting furnace, locking the polished tungsten alloy plate through a special lifting clamp, and placing the silicon surface with the smooth surface parallel to the molten state right above the smelting furnace;
step three: controlling the descending height of the tungsten alloy plate to be close to the silicon surface in a molten state, enabling the smooth surface of the tungsten alloy plate to be in contact with the silicon surface in the molten state, utilizing a smelting furnace to carry out cooling treatment on the silicon in the molten state, further enabling the silicon surface in the molten state to separate out a silicon film and be adsorbed on the surface of the smooth tungsten alloy plate, then driving the tungsten alloy plate to be lifted and carrying the silicon film to be lifted, arranging a base at the bottom of the tungsten alloy plate, and enabling the formed silicon film to be separated from the tungsten alloy plate and fall to the surface of the base;
step four: polishing the other surface of the contact surface of the silicon film and the tungsten alloy plate to ensure that both surfaces of the silicon film are in a smooth state, and then processing the silicon film by adopting the technologies of surface texturing, emitter region passivation, partition doping and the like to prepare a crystalline silicon cell;
step five: after performance detection is carried out on the crystalline silicon battery piece, the qualified crystalline silicon battery piece is taken to be packaged, so that the crystalline silicon battery piece is arranged between the two layers of EVA adhesive films, and is locked in the clamping groove of the frame through glass and the back film, and meanwhile, welding connection of the crystalline silicon battery piece and the junction box is completed.
4. The method for manufacturing an ultrathin crystal silicon solar cell according to claim 3, wherein the method comprises the following steps: in the first step, the crude silicon is converted into volatile and easily purified silicon tetrachloride or trichlorosilane, then the silicon tetrachloride or trichlorosilane is purified by a rectification method, and the silicon with higher purity is obtained by reduction with hydrogen in an electric furnace.
5. The method for manufacturing an ultrathin crystal silicon solar cell according to claim 3, wherein the method comprises the following steps: and in the first step, the tungsten alloy plate is polished in a step-by-step polishing mode, and the polishing precision is not lower than 1 mu m.
6. The method for manufacturing an ultrathin crystal silicon solar cell according to claim 3, wherein the method comprises the following steps: the melting temperature of the silicon in the second step is 1600-1800 ℃.
7. The method for manufacturing an ultrathin crystal silicon solar cell according to claim 3, wherein the method comprises the following steps: the temperature of the third step is 1100-1300 ℃.
8. The method for manufacturing an ultrathin crystal silicon solar cell according to claim 3, wherein the method comprises the following steps: the chemical formula of the crude silicon prepared in the first step is as follows: SiO2 2 +3C → SiC +2CO and 2SiC + SiO 2 → 3Si +2CO, the reaction conditions are heating.
9. The method for manufacturing an ultra-thin crystalline silicon solar cell according to claim 3, wherein: and the polishing precision in the fourth step is not lower than 1 mu m, and the silicon film is made into a crystalline silicon cell through one or more of surface texturing, emitter region passivation and partition doping.
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