CN115000118A - Micro LED cellular structure with active addressing, preparation method thereof and micro LED device - Google Patents
Micro LED cellular structure with active addressing, preparation method thereof and micro LED device Download PDFInfo
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Abstract
The invention discloses an active addressing micro LED cellular structure, which comprises: the CMOS wafer substrate is arranged in an anode through hole in the CMOS wafer substrate, a two-color light-emitting unit or a three-color light-emitting unit is formed on the anode through hole, and the heights of the light-emitting units are sequentially increased or decreased; the light emitting unit consists of a CMOS drive circuit layer and light emitting layers arranged on the CMOS drive circuit layer, and a common cathode is arranged on each light emitting layer. And (3) performing single-chip integration by adopting anodes with different heights in batches to form R, G, B sub-pixels with different heights, and finishing color display.
Description
Technical Field
The invention belongs to the technical field of Micro OLED, and particularly relates to an active addressing Micro LED cellular structure, a preparation method thereof and a Micro LED device.
Background
Micro Light emitting diodes (Micro LEDs) are a new generation of display technology, and have self-luminous display characteristics, and compared with the existing Organic Light-emitting diode (OLED) technology, the Micro LED display device has a series of advantages of higher brightness and stability, better Light emitting efficiency, lower power consumption, faster response time, and the like. The display principle of the Micro LED display device is that the LED structure is designed to be thinned, miniaturized and arrayed, and the size of the Micro LED display device is only about 1-10 um grade; the display is then formed by methods such as monolithic integration or bulk transfer.
At present, single-color devices are mostly formed through a mass transfer scheme, the transfer efficiency and the yield of the existing mass transfer scheme can not reach the mass production standard, if full-color display is carried out, three times of mass transfer are needed, or two times of transfer (R, G; R, B; G, B) are needed to form color display, so the technical difficulty is further increased; in addition, the manufacturing cost is high.
Disclosure of Invention
The invention provides an active addressing micro LED cellular structure, aiming at improving the problems.
The invention is realized in such a way that an actively addressed micro LED cell structure, which comprises:
the CMOS wafer substrate is arranged in an anode through hole in the CMOS wafer substrate, a two-color light-emitting unit or a three-color light-emitting unit is formed on the anode through hole, and the heights of the light-emitting units are sequentially increased or decreased;
the light emitting unit consists of a CMOS drive circuit layer and light emitting layers arranged on the CMOS drive circuit layer, and a common cathode is arranged on each light emitting layer.
Further, the three light emitting units are sequentially a first light emitting unit, a second light emitting unit, and a third light emitting unit, wherein,
the first light-emitting unit consists of a first CMOS driving circuit layer, a first anode and a first light-emitting layer from bottom to top in sequence;
the second light-emitting unit consists of a first CMOS drive circuit layer, a first anode, a second CMOS drive circuit layer, a second anode and a second light-emitting layer from bottom to top in sequence;
the third light-emitting unit is sequentially composed of a first CMOS drive circuit layer, a first anode, a second CMOS drive circuit layer, a second anode, a third CMOS drive circuit layer, a third anode and a third light-emitting layer from bottom to top.
Further, the two light emitting units are a first light emitting unit and a second light emitting unit in sequence, wherein,
the first light-emitting unit consists of a first CMOS drive circuit layer, a first anode and a first light-emitting layer from bottom to top in sequence; the second light-emitting unit is sequentially composed of a first CMOS drive circuit layer, a first anode, a second CMOS drive circuit layer, a second anode and a second light-emitting layer from bottom to top.
Further, the cellular structure further includes:
and a high-temperature filling layer arranged between the adjacent light emitting units.
Further, the cellular structure further includes:
and the passivation repairing layer is arranged on the high-temperature filling layer and the side walls of the two light-emitting units connected with the high-temperature filling layer and is positioned below the common cathode.
Furthermore, the light-emitting layer sequentially consists of a P-type layer, an MQW layer and an N-type layer from bottom to top.
The invention is thus achieved, an actively addressed micro LED device, said device comprising:
the micro LED light source comprises a plurality of micro LED cellular structures with active addressing, wherein a packaging filling layer and a protective layer are sequentially arranged on a common cathode of all the micro LED cellular structures.
The invention is realized in such a way that a preparation method of an active addressing micro LED cellular structure specifically comprises the following steps:
s11, depositing a first CMOS driving circuit layer on the surface of the CMOS driving backboard, depositing anodes on three light-emitting LED epitaxial wafers, wherein the light-emitting LED epitaxial wafers sequentially comprise a substrate and a light-emitting layer;
s12, bonding the first CMOS driving circuit layer on the surface of the CMOS driving backboard and the first anode of the first light-emitting LED epitaxial wafer, wherein FIG. 5 is a schematic structural diagram of the bonded CMOS driving backboard and the first light-emitting LED epitaxial wafer,
s13, removing the functional substrate layer on the first light-emitting LED epitaxial wafer, and removing the first light-emitting layer on the second growth area and the third growth area;
s14, growing a second CMOS driving circuit layer on the second growing area and the third growing area, and bonding a second anode on the second light-emitting LED epitaxial wafer to the second CMOS driving circuit layer;
s15, removing the functional substrate on the second light-emitting LED epitaxial wafer, removing the second light-emitting layers in the first growth area and the third growth area, and removing the second anode in the first growth area;
s16, growing a third CMOS drive circuit layer in the third growing region, and bonding a third anode on the third light-emitting LED epitaxial wafer to the third CMOS drive circuit layer;
s17, removing the functional substrate on the third light-emitting LED epitaxial wafer, and removing the third light-emitting layer and the third anode in the first growth area and the second growth area;
s18, preparing a common cathode on the first light emitting layer, the second light emitting layer and the third light emitting layer.
Further, after the step S17 and before the step S18, the method further includes:
s1, etching the joint of the two growth areas until the CMOS driving back plate forms a gap, and filling high-temperature fillers into the gap to form a high-temperature filling layer between the light-emitting units;
and S2, forming a passivation repairing layer on the side walls of the two light-emitting units connected by the high-temperature filling layer and the high-temperature filling layer, and forming a common cathode on the light-emitting layer after the passivation repairing layer is formed.
The invention is realized in such a way, and provides a preparation method of an active addressing micro LED cellular structure, which comprises the following steps:
s21, depositing a first CMOS driving circuit layer on the surface of the CMOS driving backboard, depositing anodes on two light-emitting LED epitaxial wafers, wherein the light-emitting LED epitaxial wafers sequentially comprise a substrate and a light-emitting layer;
s22, bonding a first CMOS driving circuit layer on the surface of the CMOS driving backboard and a first anode of the first light-emitting LED epitaxial wafer;
s23, removing a functional substrate layer (first functional substrate) on the first light-emitting LED epitaxial wafer, and removing the first light-emitting layer in the second growth area;
s24, growing a second CMOS drive circuit layer in the second growing region, and bonding a second anode on the second light-emitting LED epitaxial wafer to the second CMOS drive circuit layer;
s25, removing the functional substrate on the second light-emitting LED epitaxial wafer, and removing the second light-emitting layer and the second anode in the first growth area;
s26, preparing a common cathode on the first light emitting layer and the second light emitting layer.
The micro LED cellular structure with active addressing provided by the invention has the following beneficial technical effects:
(1) adopting anodes with different heights to carry out single-chip integration in batches to form R, G, B sub-pixels with different heights so as to finish color display;
(2) the proposed micro LED device structure completely adopts a semiconductor process; meanwhile, due to the adoption of the vertical structure chip, the anode part is positioned at the bottom of the device, so that the shielding of the electrode part is avoided, and the pixel density of the display device is improved.
Drawings
Fig. 1 is a schematic diagram of a CMOS driving backplane after deposition of a CMOS driving circuit layer according to an embodiment of the present invention;
fig. 2 is a schematic view of a light-emitting LED epitaxial wafer after an anode is deposited according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a CMOS driving backplane shown in fig. 1 and a light-emitting LED epitaxial wafer shown in fig. 2 after bonding according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a method for removing a functional substrate in a light LED epitaxial wafer according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a structure after three light emitting units are integrated according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a surface passivation repair structure according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a structure after completion of a common cathode provided in an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a completed package filling according to an embodiment of the present invention;
FIG. 9 is an enlarged view of a portion of area A of FIG. 8 according to an embodiment of the present invention;
FIG. 10 is an enlarged view of a portion of the area B in FIG. 9 according to an embodiment of the present invention;
a CMOS wafer substrate; 2. an anode via hole; 3, a CMOS driving circuit layer; 31. a first CMOS driver circuit layer; 32. a second CMOS drive circuit layer; 33. a third CMOS driver circuit layer; 4. a high temperature fill layer; 5. passivating the repair layer; 6. a common cathode; 7. packaging the filling layer; 8. a protective layer; a. a functional substrate; b. a light emitting layer; b1.p type layer; b2.MQW layer; b3.N type layer; c. an anode; c1. a first anode; c2. a second anode; c3. a third anode.
Detailed Description
The following detailed description of the embodiments of the present invention will be given in order to provide those skilled in the art with a more complete, accurate and thorough understanding of the inventive concept and technical solutions of the present invention.
Fig. 7 is a schematic diagram of a structure of an actively addressed micro LED unit cell provided by an embodiment of the present invention, and for convenience of description, only a part related to the embodiment of the present invention is shown.
The cellular structure includes:
the CMOS wafer substrate is arranged on an anode through hole in the CMOS wafer substrate, a two-color light-emitting unit or a three-color light-emitting unit is formed on the anode through hole, and the height of the light-emitting unit is increased or decreased progressively; the light emitting unit consists of a CMOS driving circuit layer and light emitting layers arranged on the CMOS driving circuit layer, and a common cathode is arranged on each light emitting layer.
The three-color light-emitting unit mentioned in the present invention refers to a red light-emitting unit, a green light-emitting unit and a blue light-emitting unit, and the two-color light-emitting unit refers to two light-emitting units of the three-color light-emitting units.
The anode via holes are used for providing current driving signals for the CMOS driving circuit layer, the CMOS driving circuit layer provides driving currents for the light emitting layers based on the current driving signals, each light emitting unit corresponds to one anode via hole, independent control of the light emitting units can be achieved, and for example, a red light emitting unit, a green light emitting unit and a blue light emitting unit are driven simultaneously when full-color display is to be achieved. The common cathode is made of a conductive transparent material, such as a metal oxide material such as ITO or IZO, or a metal material such as Al or Ag, but may be a multi-layer structure made of the above materials, and the light emitting unit emits light by supplying a driving current between the common cathode and the anode.
In another embodiment of the present invention, if the cellular structure includes three light emitting units, which are a first light emitting unit, a second light emitting unit and a third light emitting unit in sequence, the first light emitting unit is composed of a first CMOS driving circuit layer, a first anode and a first light emitting layer from bottom to top in sequence; the second light-emitting unit consists of a first CMOS drive circuit layer, a first anode, a second CMOS drive circuit layer, a second anode and a second light-emitting layer from bottom to top in sequence; the third light emitting unit is sequentially composed of a first CMOS driving circuit layer, a first anode, a second CMOS driving circuit layer, a second anode, a third CMOS driving circuit layer, a third anode and a third light emitting layer from bottom to top, as shown in fig. 9.
If the cellular structure comprises two light-emitting units, namely a first light-emitting unit and a second light-emitting unit, the first light-emitting unit consists of a first CMOS driving current layer, a first anode and a first light-emitting layer from bottom to top in sequence; the second light-emitting unit is sequentially composed of a first CMOS drive circuit layer, a first anode, a second CMOS drive circuit layer, a second anode and a second light-emitting layer from bottom to top.
In an embodiment of the present invention, the cell structure further includes:
the high temperature filling layer that sets up between adjacent luminescence unit, the material of high temperature filling layer can be organic material like Polyimide (PI), Polydimethylsiloxane (PDMS), photoresist etc, also can be inorganic material like SiO, SiN, one or more materials such as AlO constitute, a luminous layer for connecting two adjacent luminescence unit, make the comparatively gentle transition in two luminous layer surfaces, the preparation of the follow-up technology of being convenient for, in addition, the existence of high temperature filling layer also makes the cell structure more firm, the mechanical strength of cell structure has been increased simultaneously.
In another embodiment of the present invention, the cell structure further includes:
the passivation repairing layer is arranged on the high-temperature filling layer and the side walls of the two light emitting units connected with the high-temperature filling layer, can avoid electric leakage caused by foreign matters existing on the side walls of the light emitting layers, and can repair damage to the light emitting layers in a dry etching process; it is necessary to supplement that the passivation repairing layer can cover the edge of the upper surface of the light emitting layer to prevent the side wall of the light emitting layer from being not completely covered in the production process and influencing the function realization of the passivation repairing layer, and the passivation repairing layer is made of SiO 2 Or Ti 2 O 3 。
In the embodiment of the invention, the light-emitting layer is composed of a P-type layer, an MQW layer and an N-type layer from bottom to top in sequence, as shown in fig. 10.
The invention also provides an actively addressed micro LED device comprising:
the micro LED cell structures with the active addressing function are characterized in that a packaging filling layer and a protective layer are sequentially arranged on a common cathode of all the micro LED cell structures. Mainly for preventing optical crosstalk, an encapsulation filling material is poured on the surface of the common cathode and planarized, the encapsulation filling material may be an organic material such as high-temperature resin, high-temperature photoresist, and the like, and then a protective layer (for example, a cover glass is attached) is provided, so that the whole device is protected by the cover glass, as shown in fig. 8.
The preparation method of the micro LED cellular structure with the active addressing provided by the embodiment of the invention specifically comprises the following steps:
s11, depositing a first CMOS driving circuit layer on the surface of the CMOS driving backboard, depositing anodes on three light-emitting LED epitaxial wafers, wherein the light-emitting LED epitaxial wafers sequentially comprise a substrate and a light-emitting layer;
fig. 1 is a schematic diagram of a CMOS driving backplane after deposition of a CMOS driving circuit layer, the CMOS driving backplane comprising: the CMOS wafer substrate and an anode through hole arranged in the CMOS wafer substrate are disclosed, wherein 1 represents the CMOS wafer substrate, 2 represents the anode through hole, and 3 represents a first CMOS driving circuit layer; the common anode through hole 2 is a tungsten hole, Cr/Pt/Au (20nm/50nm/1000nm) is deposited and laminated on the CMOS wafer substrate to form a first CMOS drive circuit layer, and the laminated structures of the second CMOS drive circuit layer and the third CMOS drive circuit layer are the same as those of the first CMOS drive circuit layer.
Fig. 2 is a schematic diagram of a light-emitting LED epitaxial wafer after anode deposition, the LED epitaxial wafer sequentially including: the LED epitaxial wafer comprises a functional substrate, a luminous layer and an anode, wherein three luminous LED epitaxial wafers are a first luminous LED epitaxial wafer, a second luminous LED epitaxial wafer and a third luminous LED epitaxial wafer, the three luminous LED epitaxial wafers are correspondingly luminous LED epitaxial wafers with three colors, namely a red LED epitaxial wafer, a blue LED epitaxial wafer and a green LED epitaxial wafer, and functional layers in the LED epitaxial wafers with different colors emit light with different colors, wherein a is the functional substrate, b is the luminous layer, and c is the anode; the first light-emitting LED epitaxial wafer sequentially comprises: the first functional substrate, the first luminescent layer and the first anode, the second luminescent LED epitaxial wafer sequentially comprises: second function substrate, second luminescent layer and second positive pole, the luminous LED epitaxial wafer of third includes in proper order: a third functional substrate, a third light-emitting layer and a third anode. ITO/Cr/Al/Pt/Au (50nm/20nm/200nm/50nm/1000nm) is laminated and deposited on the light-emitting layers of the three light-emitting LED epitaxial wafers, and a first anode c1, a second anode c2 and a third anode c3 are formed.
S12, bonding the first CMOS driving circuit layer on the surface of the CMOS driving backboard and the first anode of the first light-emitting LED epitaxial wafer, wherein FIG. 3 is a schematic structural diagram of the bonded CMOS driving backboard and the first light-emitting LED epitaxial wafer,
s13, removing the functional substrate layer (the first functional substrate, as shown in fig. 4) on the first light-emitting LED epitaxial wafer, and removing the first light-emitting layer on the second growth region and the third growth region;
the first growth area, the second growth area and the third growth area are used for growing three light-emitting units, photoetching is carried out on a first light-emitting layer in the first growth area, and the first light-emitting layer outside the first growth area is etched and removed to form a pixel pattern;
s14, growing a second CMOS driving circuit layer on the second growing area and the third growing area, and bonding a second anode on the second light-emitting LED epitaxial wafer to the second CMOS driving circuit layer;
in order to bond the second anode on the second light-emitting LED epitaxial wafer to the second CMOS drive circuit layer, the second CMOS drive circuit layer is prepared to be thicker than the first light-emitting layer.
S15, removing the functional substrate on the second light-emitting LED epitaxial wafer, removing the second light-emitting layers in the first growth area and the third growth area, and removing the second anode in the first growth area;
photoetching the second light-emitting layer in the second growth area, and etching the second light-emitting layer outside the second growth area to remove the second light-emitting layer to form a pixel pattern;
s16, growing a third CMOS drive circuit layer in the third growing region, and bonding a third anode on the third light-emitting LED epitaxial wafer to the third CMOS drive circuit layer;
in order to bond the third anode on the third light emitting LED epitaxial wafer to the third CMOS drive circuit layer, the third CMOS drive circuit layer is thus prepared to be thicker than the second light emitting layer.
S17, removing the functional substrate on the third light-emitting LED epitaxial wafer, and removing the third light-emitting layer and the third anode in the first growth region and the second growth region, as shown in fig. 5;
photoetching the third light-emitting layer in the third growth area, and etching the third light-emitting layer outside the third growth area to remove the third light-emitting layer to form a pixel pattern;
s18, preparing a common cathode on the first light emitting layer, the second light emitting layer and the third light emitting layer, as shown in fig. 7, thereby completing the preparation of the micro LED cell structure of the three light emitting units.
In the embodiment of the present invention, if the light emitted by the two light emitting units (red light and blue light, red light and green light, and green light and blue light) is combined, the preparation method thereof is specifically as follows:
s21, depositing a first CMOS driving circuit layer on the surface of the CMOS driving backboard, depositing anodes on two light-emitting LED epitaxial wafers, wherein the light-emitting LED epitaxial wafers sequentially comprise a substrate and a light-emitting layer;
s22, bonding a first CMOS driving circuit layer on the surface of the CMOS driving backboard and a first anode of the first light-emitting LED epitaxial wafer;
s23, removing a functional substrate layer (first functional substrate) on the first light-emitting LED epitaxial wafer, and removing the first light-emitting layer in the second growth area;
and the first growth area and the second growth area are used for growing two light-emitting units, and the first light-emitting layer outside the first growth area is etched and removed to form a pixel pattern.
S24, growing a second CMOS drive circuit layer in the second growing region, and bonding a second anode on the second light-emitting LED epitaxial wafer to the second CMOS drive circuit layer;
in order to bond the second anode on the second light-emitting LED epitaxial wafer to the second CMOS drive circuit layer, the second CMOS drive circuit layer is thus prepared to be thicker than the first light-emitting layer.
S25, removing the functional substrate on the second light-emitting LED epitaxial wafer, and removing the second light-emitting layer and the second anode in the first growth area;
photoetching the second light-emitting layer in the second growth area, and etching the second light-emitting layer outside the second growth area to remove the second light-emitting layer to form a pixel pattern;
and S26, preparing a common cathode on the first light-emitting layer and the second light-emitting layer, namely completing the preparation of the micro LED unit cell structure of the two light-emitting units.
In the embodiment of the invention, the micro LED cellular structures of the two light-emitting units and the micro LED cellular structures of the two light-emitting units are the same in the subsequent preparation process; further comprising after step S25 before step S26 or after step S17 before step S18:
s1, etching the joint of the two growth areas until the CMOS driving back plate forms a gap, filling high-temperature fillers into the gap to form a high-temperature filling layer between the light-emitting units, and filling the high-temperature fillers into the gap by an ink-jet printing method.
In the embodiment of the present invention, after step S1, the method further includes:
s2, forming a passivation repair layer on the sidewalls of the two light emitting cells connected by the high temperature filling layer and the high temperature filling layer, and forming a common cathode on the light emitting layer after forming the passivation repair layer as shown in fig. 6.
The invention has been described by way of example, and it is to be understood that its specific implementation is not limited to the details of construction and arrangement shown, but is within the scope of the invention.
Claims (10)
1. An actively addressed micro LED cell structure, characterized in that the cell structure comprises:
the CMOS wafer substrate is arranged in an anode through hole in the CMOS wafer substrate, a two-color light-emitting unit or a three-color light-emitting unit is formed on the anode through hole, and the heights of the light-emitting units with different colors are different;
the light emitting unit consists of a CMOS drive circuit layer and light emitting layers arranged on the CMOS drive circuit layer, and a common cathode is arranged on each light emitting layer.
2. The actively addressed micro LED cell structure of claim 1, wherein the three light emitting units are a first light emitting unit, a second light emitting unit and a third light emitting unit in this order, wherein,
the first light-emitting unit consists of a first CMOS drive circuit layer, a first anode and a first light-emitting layer from bottom to top in sequence;
the second light-emitting unit consists of a first CMOS drive circuit layer, a first anode, a second CMOS drive circuit layer, a second anode and a second light-emitting layer from bottom to top in sequence;
the third light-emitting unit is sequentially composed of a first CMOS drive circuit layer, a first anode, a second CMOS drive circuit layer, a second anode, a third CMOS drive circuit layer, a third anode and a third light-emitting layer from bottom to top.
3. The actively addressed micro LED cell structure of claim 1, wherein two light emitting units are a first light emitting unit and a second light emitting unit in sequence, wherein,
the first light-emitting unit consists of a first CMOS drive circuit layer, a first anode and a first light-emitting layer from bottom to top in sequence; the second light-emitting unit is sequentially composed of a first CMOS drive circuit layer, a first anode, a second CMOS drive circuit layer, a second anode and a second light-emitting layer from bottom to top.
4. The actively addressed micro LED cell structure according to claim 1, wherein the cell structure further comprises:
and a high-temperature filling layer arranged between the adjacent light emitting units.
5. The actively addressed micro LED cell structure according to claim 1, wherein the cell structure further comprises:
and the passivation repairing layer is arranged on the high-temperature filling layer and the side walls of the two light-emitting units connected with the high-temperature filling layer and is positioned below the common cathode.
6. The actively addressed micro LED cell structure as claimed in claim 1, wherein the light emitting layer is composed of a P-type layer, a MQW layer and an N-type layer in this order from bottom to top.
7. An actively addressed micro LED device, characterized in that the device comprises:
a plurality of micro LED cellular structures with active addressing according to any of claims 1 to 6, wherein an encapsulation filling layer and a protection layer are sequentially arranged on the common cathode of all micro LED cellular structures.
8. A preparation method of an active addressing micro LED cellular structure is characterized by comprising the following steps:
s11, depositing a first CMOS driving circuit layer on the surface of the CMOS driving backboard, depositing anodes on three light-emitting LED epitaxial wafers, wherein the light-emitting LED epitaxial wafers sequentially comprise a substrate and a light-emitting layer;
s12, bonding the first CMOS driving circuit layer on the surface of the CMOS driving backboard and the first anode of the first light-emitting LED epitaxial wafer, wherein FIG. 5 is a schematic structural diagram of the bonded CMOS driving backboard and the first light-emitting LED epitaxial wafer,
s13, removing the functional substrate layer on the first light-emitting LED epitaxial wafer, and removing the first light-emitting layer on the second growth area and the third growth area;
s14, growing a second CMOS driving circuit layer on the second growing area and the third growing area, and bonding a second anode on the second light-emitting LED epitaxial wafer to the second CMOS driving circuit layer;
s15, removing the functional substrate on the second light-emitting LED epitaxial wafer, removing the second light-emitting layers in the first growth area and the third growth area, and removing the second anode in the first growth area;
s16, growing a third CMOS drive circuit layer in the third growing region, and bonding a third anode on the third light-emitting LED epitaxial wafer to the third CMOS drive circuit layer;
s17, removing the functional substrate on the third light-emitting LED epitaxial wafer, and removing the third light-emitting layer and the third anode in the first growth area and the second growth area;
s18, preparing a common cathode on the first light emitting layer, the second light emitting layer and the third light emitting layer.
9. The method for preparing an actively addressed micro LED cell structure according to claim 8, wherein the step S17 is followed by the step S18 and further comprising:
s1, etching the joint of the two growth areas until the CMOS driving back plate forms a gap, and filling high-temperature fillers into the gap to form a high-temperature filling layer between the light-emitting units;
and S2, forming a passivation repairing layer on the side walls of the two light-emitting units connected by the high-temperature filling layer and the high-temperature filling layer, and forming a common cathode on the light-emitting layer after the passivation repairing layer is formed.
10. A preparation method of an active addressing micro LED cellular structure is characterized by comprising the following steps:
s21, depositing a first CMOS driving circuit layer on the surface of the CMOS driving backboard, depositing anodes on two light-emitting LED epitaxial wafers, wherein the light-emitting LED epitaxial wafers sequentially comprise a substrate and a light-emitting layer;
s22, bonding a first CMOS driving circuit layer on the surface of the CMOS driving backboard and a first anode of the first light-emitting LED epitaxial wafer;
s23, removing the functional substrate layer on the first light-emitting LED epitaxial wafer, and removing the first light-emitting layer in the second growth area;
s24, growing a second CMOS drive circuit layer in the second growing region, and bonding a second anode on the second light-emitting LED epitaxial wafer to the second CMOS drive circuit layer;
s25, removing the functional substrate on the second light-emitting LED epitaxial wafer, and removing the second light-emitting layer and the second anode in the first growth area;
s26, preparing a common cathode on the first light emitting layer and the second light emitting layer.
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