CN115000057A - perovskite/GaAs two-end mechanical laminated solar cell of metal grid interconnection layer - Google Patents
perovskite/GaAs two-end mechanical laminated solar cell of metal grid interconnection layer Download PDFInfo
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Abstract
The invention provides a perovskite/GaAs two-end mechanical laminated solar cell with a metal grid interconnection layer and a preparation method thereof, wherein the interconnection of a perovskite top cell and a GaAs bottom cell is realized by taking a metal grid as the interconnection layer, so that the preparation process and the cost of the cell can be simplified while the optical parasitic absorption and the carrier non-radiative recombination are reduced, and further the optical and electrical coupling between the two is realized to obtain a two-end laminated solar cell device. The invention not only has the advantages of high efficiency and lower cost of the traditional perovskite/GaAs two-end laminated solar cell, but also can effectively reduce the rigorous requirements of optical and electrical properties of the interconnection layer, and simultaneously avoid the prominent difficult problem of damage of GaAs solar cells caused by high-temperature, solution and other processes, has the characteristics of high efficiency, simple preparation process, low cost and batch production, and shows remarkable industrialization advantages.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a perovskite/GaAs two-end mechanical laminated solar cell of a metal grid interconnection layer.
Background
Organic-inorganic hybrid perovskite materials attract extensive attention due to their excellent photoelectric characteristics and low-cost preparation methods, and are rapidly developed and applied, wherein in the application of solar cells, the unijunction efficiency reaches 25.7%, and approaches the highest efficiency of the current mainstream GaAs-based solar cells. However, the maximum efficiency of a single-junction cell is limited by the shokrill-quintet limit, so that the search of a lamination process becomes a necessary way for related work to further improve the efficiency of a solar cell, and the perovskite/GaAs lamination cell is in wide attention.
perovskite/GaAs tandem solar cells can be divided into two-terminal and four-terminal tandem cells, each with advantages between them. Among them, the four-terminal laminated cell requires two complete cell structures to be prepared and pressed together by pressure, which inevitably complicates the process and greatly increases the cost; meanwhile, too much and too thick stacked structure will bring extra light loss, and will have great influence on the efficiency of the battery. The two-end laminated cell is characterized in that a perovskite layer is directly prepared on a GaAs cell, although the structure effectively improves the problems of process, cost and efficiency loss caused by four-end lamination, micron-sized fluctuation on the surface of the GaAs cell brings a new problem for the preparation of the perovskite layer, in order to ensure the performance of the final laminated cell, a connecting layer needs to be prepared between the perovskite cell and the GaAs cell, and the design and optimization of the connecting structure become the difficulty of scientific research work; in addition, the efficiency impairment of GaAs cells caused by the high temperatures and solution conditions associated with the preparation of perovskite layers also pose a challenge to the two-terminal lamination process to some extent.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a perovskite/GaAs mechanical laminated solar cell based on a metal grid intermediate layer and a preparation method thereof. The perovskite/GaAs mechanical laminated solar cell based on the metal grid middle layer at the two ends effectively widens the spectrum utilization range and enhances the photoelectric conversion capability of the solar cell. The metal grid is used as the middle layer, so that the bonding tightness of the GaAs cell and the perovskite solar cell can be enhanced; the perovskite solar cell is connected with the GaAs cell in series in a mechanical stacking mode, so that the efficiency damage of high temperature and solution to the GaAs cell in the traditional two-end process is avoided.
To achieve the above object, the present invention is achieved by the following aspects.
In a first aspect, the invention provides a perovskite/GaAs two-end mechanical stacked solar cell of a metal grid interconnection layer, which includes a perovskite top cell, a metal grid interconnection layer and a GaAs cell, wherein the GaAs cell is located on the metal grid interconnection layer, the metal grid interconnection layer is located on the perovskite top cell, and the perovskite top cell and the GaAs cell are bonded through the metal grid interconnection layer, so that efficiency damage to the GaAs cell is reduced and current loss caused by micron-scale fluctuation of the surface of the GaAs cell is weakened.
Optionally, the metal grid interconnection layer realizes electrical interconnection and optical coupling between the perovskite top cell and the GaAs cell in a mechanical stacking manner.
Alternatively, the structure of the perovskite solar cell may be a formal or trans structure.
Optionally, the perovskite top cell comprises ITO conductive glass (1), an electron transport layer (2), a perovskite light absorption layer (3), a hole transport layer (4), MoO from bottom to top x The ITO conductive glass comprises a transmission buffer layer (5), an oxide transparent conductive film (6), an Ag gate electrode (7), a metal grid interconnection layer (8) and a GaAs battery (9), wherein an anode is arranged on the GaAs battery, and a cathode is arranged on the ITO conductive glass (1).
In a second aspect, the invention provides a method for preparing a perovskite/GaAs two-end mechanical tandem solar cell of a metal grid interconnection layer, which is used for preparing the perovskite/GaAs two-end mechanical tandem solar cell of the metal grid interconnection layer in the first aspect, and the method for preparing the perovskite/GaAs two-end mechanical tandem solar cell comprises:
step 1: obtaining an ITO substrate and cleaning;
step 2: preparing an electron transmission layer on the cleaned ITO substrate by spin coating;
and step 3: placing the structure formed in step 2 in a glove box N 2 In the environment, a spin coater PbI is used 2 /PbCl 2 The mixed solution is spin-coated on the electron transport layer, and then the MAI/FAI mixed solution is spin-coated to obtain a perovskite light absorption layer;
and 4, step 4: the structure formed in step 3 is placed in a glove box N 2 In the environment, spin-coating a Spiro-OMeTAD solution on the perovskite light absorption layer to obtain a hole transport layer;
and 5: MoO is deposited on the structure formed in step 4 by using an evaporation process x To obtain MoO x A transmission buffer layer;
step 6: depositing IZO conductive material on the structure formed in the step 5 by adopting a magnetron sputtering process to obtain an oxide transparent conductive film;
and 7: depositing an Ag electrode on the oxide transparent conductive film by using an evaporation process to finish the preparation of the perovskite solar cell;
and 8: depositing a metal grid on the perovskite solar cell to obtain a metal grid interconnection layer;
and step 9: and placing the GaAs battery anode on the metal grid interconnection layer, and curing by using ultraviolet curing adhesive to realize the bonding of the GaAs battery and the perovskite solar battery and complete the mechanical laminated bonding of the perovskite battery and the GaAs battery.
Optionally, step 1 includes:
sequentially putting the ITO glass substrate into a Decon-90 aqueous solution, deionized water and absolute ethyl alcohol, and respectively ultrasonically cleaning for 15-20 min;
and (3) treating the cleaned ITO substrate in UV-Ozone for 15-30 min.
Optionally, the step 2 includes:
80 μ L of SnO 2 And (3) directly spin-coating the sol on an ITO substrate treated by UV-Ozone for 30s at the rotating speed of 3000rpm in an air environment, placing the ITO substrate on a hot table, and annealing for 30min at the temperature of 150 ℃ in the air environment to obtain the electron transport layer.
Optionally, step 3 includes:
placing the structure formed in step 2 in a glove box N 2 In the environment, a spin coater is used for mixing PbI 2 /PbCl 2 The mixed solution is spin-coated on the perovskite light absorption layer; then, spin-coating by using an MAI/FAI mixed solution;
and placing the structure formed after spin coating on a hot table for annealing to obtain the hole transport layer.
Alternatively to this, the first and second parts may,
the ITO substrate comprises glass and an ITO conductive layer; the thickness of the glass is 0.5mm-1mm, and the thickness of the ITO conductive layer is 50-200 nm; the thickness of the electron transmission layer is 50nm-100 nm; the thickness of the perovskite light absorption layer is 100nm-800 nm; MoO x The thickness of the transmission buffer layer is 10nm-80 nm; the deposition thickness of the IZO conductive material is 50nm-200 nm; the thickness of the Ag electrode is 30nm-150 nm; the thickness of the metal grid interconnection layer is 10nm-300 nm.
Alternatively to this, the first and second parts may,
the efficiency of the mechanical laminated solar cell is improved by preparing a dielectric antireflection layer on the glass of the ITO substrate.
The invention has the following beneficial effects:
the invention is applied to perovskite/GaAs laminated solar cells, and the two-end mechanical laminated solar cells based on the metal grids are directly prepared on the perovskite solar cells, and the adoption of the mechanically stacked keys and the manner avoids additional processes on the GaAs cells in the traditional two-end laminated cell process, thereby greatly reducing the efficiency damage to the GaAs cells and providing an ideal way for improving the efficiency of the laminated cells. In addition, the metal grid is used as the middle layer, so that the GaAs cell and the perovskite solar cell are bonded more tightly, and the current loss caused by micron-scale fluctuation on the surface of the GaAs cell is weakened. The invention simultaneously considers the requirements of the preparation process and the cost, shows strong application potential, and is an ideal structure and process of the two-end mechanical laminated solar cell based on the metal grid, which has low cost, easy realization and easy repetition.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite/GaAs two-end mechanical tandem solar cell of a metal grid interconnection layer according to the present invention;
FIG. 2 is a schematic cross-sectional view of a perovskite/GaAs two-end mechanical stacked solar cell of a metal grid interconnection layer provided by the present invention;
fig. 3 is a process flow diagram for fabricating a metal grid based two-terminal mechanical tandem solar cell.
Detailed Description
The invention will be described in detail with reference to the drawings and specific embodiments, which are illustrative of the invention and are not to be construed as limiting the invention.
As shown in fig. 1, the perovskite/GaAs two-terminal mechanical tandem solar cell of a metal grid interconnection layer provided in the present invention includes a perovskite top cell, a metal grid interconnection layer, and a GaAs cell, where the GaAs cell is located on the metal grid interconnection layer, the metal grid interconnection layer is located on the perovskite top cell, and the perovskite top cell and the GaAs cell are bonded through the metal grid interconnection layer, so as to reduce efficiency damage to the GaAs cell and weaken current loss due to micron-scale fluctuation of a surface of the GaAs cell.
The metal grid interconnection layer realizes the electrical interconnection and optical coupling of the perovskite top battery and the GaAs battery in a mechanical stacking mode. The structure of the perovskite solar cell may be a formal or a trans structure.
Referring to fig. 2, the perovskite top cell includes an ITO conductive glass 1, an electron transport layer 2, a perovskite light absorption layer 3, a hole transport layer 4, MoO from bottom to top x A transmission buffer layer 5, an oxide transparent conductive film 6, an Ag gate electrode 7, a metal grid interconnection layer 8 and a GaAs battery 9, wherein an anode is arranged on the GaAs battery, and the ITO guideThe electric glass 1 is provided with a cathode.
According to the perovskite/GaAs mechanical laminated solar cell based on the metal grid intermediate layer, the metal grid is used as the interconnection layer, so that the bonding tightness between the GaAs cell and the perovskite solar cell can be enhanced; the perovskite solar cell is connected with the GaAs cell in series in a mechanical stacking mode, so that the efficiency damage of high temperature and solution to the GaAs cell in the traditional two-end process can be avoided, the spectrum utilization range is effectively widened, and the photoelectric conversion capability of the solar cell is enhanced.
Referring to fig. 3, the method for manufacturing a perovskite/GaAs two-end mechanical tandem solar cell of a metal grid interconnection layer according to the present invention includes:
step 1: obtaining an ITO substrate and cleaning;
the method comprises the following steps of sequentially putting an ITO glass substrate into a Decon-90 aqueous solution, deionized water and absolute ethyl alcohol, and respectively carrying out ultrasonic cleaning for 15-20 min; and (3) placing the cleaned ITO substrate in UV-Ozone for treatment for 15-30 min.
Step 2: preparing an electron transmission layer on the cleaned ITO substrate by spin coating;
80 mu L of SnO 2 And (3) directly spin-coating the sol on an ITO substrate treated by UV-Ozone for 30s at the rotating speed of 3000rpm in an air environment, placing the ITO substrate on a hot table, and annealing for 30min at the temperature of 150 ℃ in the air environment to obtain the electron transport layer.
And step 3: placing the structure formed in step 2 in a glove box N 2 In the environment, a spin coater PbI is used 2 /PbCl 2 The mixed solution is spin-coated on the electron transport layer, and then the MAI/FAI mixed solution is spin-coated to obtain a perovskite light absorption layer;
the invention places the structure formed in step 2 in a glove box N 2 In the environment, a spin coater is used for mixing PbI 2 /PbCl 2 The mixed solution is spin-coated on the perovskite light absorption layer; then, spin-coating by using an MAI/FAI mixed solution; annealing the spin-coated structure on a hot stage to obtain a cavityA transport layer.
PbI in this step 2 /PbCl 2 The dosage of the mixed solution is 80 mu L; PbI 2 /PbCl 2 The spin-coating speed of the mixed solution is 3000rpm, and the time is 45 s; the dosage of the MAI/FAI mixed solution is 80 mu L; the spin-coating speed of the MAI/FAI mixed solution is 3000rpm for 45 s. After the spin coating is finished, the substrate is placed on a hot bench at 100 ℃ for annealing for 10 min.
PbI of the present invention 2 /PbCl 2 The preparation process of the mixed solution comprises the following steps: taking PbI with the mass of 626.9mg 2 Powder and 66.7mgPbCl 2 The powder was dissolved in 1mL of DMF and stirred at 72 ℃ until completely dissolved to give PbI 2 /PbCl 2 The solution was mixed. The preparation process of the MAI/FAI mixed solution comprises the following steps: MAI (methyl amine iodide) powder and 30mg FAI (formamidine hydroiodide) powder, which were 70mg by mass, were dissolved in 1mL of a mixed solution of IPA (isopropyl alcohol) and 10. mu. LDMF, and the mixture was stirred at room temperature until completely dissolved to obtain an MAI/FAI mixed solution.
And 4, step 4: the structure formed in step 3 is placed in a glove box N 2 In the environment, spin-coating a Spiro-OMeTAD solution on the perovskite light absorption layer to obtain a hole transport layer;
illustratively, ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 The substrate was placed in a glove box N 2 Spin coating a Spiro-OMeTAD solution on the ITO/SnO in the environment 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 On the substrate, spin-coated ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 The substrate is placed at room temperature to obtain a Spiro-OMeTAD hole transport layer.
And 5: MoO is deposited on the structure formed in step 4 by using an evaporation process x To obtain MoO x A transmission buffer layer;
illustratively, the invention can adopt an evaporation process on ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 Deposition of MoO on/Spiro substrates x Transmitting the buffer layer to obtain ITO-SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro/MoO x A substrate.
And 6: depositing IZO conductive material on the structure formed in the step 5 by adopting a magnetron sputtering process to obtain an oxide transparent conductive film;
illustratively, the invention can adopt a magnetron sputtering process to perform the reaction on ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro/MoO x Depositing IZO conductive layer on the substrate to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro/MoO x a/IZO substrate.
The preparation process of the Spiro-OMeTAD solution comprises the following steps: Spiro-OMeTAD powder with a mass of 90mg was dissolved in a mixed solution of 1mL of CB (chlorobenzene), 45. mu. LLI salt (170mg/mL), 75. mu. LCo salt (100mg/mL) and 75. mu. LtBP, and stirred at room temperature until completely dissolved. The dose of the Spiro-OMeTAD solution was 80. mu.L, the spin speed was 4000rpm, and the time was 45 s.
And 7: depositing an Ag electrode on the oxide transparent conductive film by using an evaporation process to finish the preparation of the perovskite solar cell;
the invention can adopt an evaporation process on ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro/MoO x And depositing an Ag electrode on the/IZO substrate to finish the preparation of the perovskite solar cell.
And step 8: depositing a metal grid on the perovskite solar cell to obtain a metal grid interconnection layer;
the invention transfers the metal grid to the needed substrate by a roll-to-roll imprinting process, and the preparation process of the metal grid middle layer is a mature metal grid film preparation process, and the specific processes include but are not limited to nano-imprinting, ink-jet printing, photoetching and the like.
The invention can adopt a nano-imprinting method to prepare ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x IZO/Ag substrateDepositing metal grids to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x a/IZO/Ag/Ni substrate.
And step 9: and (3) placing the GaAs battery anode on the metal grid interconnection layer, and curing by using ultraviolet curing adhesive to realize the bonding of the GaAs battery and the perovskite solar battery and complete the mechanical laminated bonding of the perovskite battery and the GaAs battery.
The area of the GaAs cell is 0.1-1cm 2 A silver grid line is adopted as an electrode; the curing process by using the ultraviolet curing adhesive comprises the following steps: and (3) coating the ultraviolet curing adhesive on the periphery of the GaAs battery, and irradiating for 1-10 min by using ultraviolet light.
The ITO substrate comprises glass and an ITO conductive layer, wherein the thickness of the glass is 0.5mm-1mm, and the thickness of the ITO conductive layer is 50-200 nm; the electron transport layer is SnO 2 For example, but not limited thereto, the thickness is 50nm to 100 nm; the perovskite light absorption layer is made of MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 、FA 0.65 MA 0.2 Cs 0.15 Pb(I 0.8 Br 0.2 ) 3 For example, but not limited thereto, the thickness is 100nm to 800 nm; the hole transport layer material is exemplified by, but not limited to, Spiro-OMeTAD; the MoO x The thickness of the transmission buffer layer is 10nm-80 nm; the IZO conductive layer is made of IZO as an example, but not limited to IZO, and the thickness of the IZO conductive layer is 50nm to 200 nm; the Ag electrode material is Ag, but not limited to Ag, and the thickness of the Ag electrode material is 30nm-150 nm; the metal grid material is Ni, but not limited to Ni, and the thickness is 10nm-300 nm.
The invention can also improve the efficiency of the mechanical laminated solar cell by preparing the dielectric antireflection layer on the glass in the ITO substrate.
The invention uses ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x A manufacturing method of a two-end mechanical laminated solar cell based on a metal grid, taking an IZO/Ag/Ni/GaAs cell structure as an example.
Referring to fig. 3, the present invention is given as follows in three embodiments.
Example 1:
1) cleaning an ITO substrate: and sequentially putting the ITO glass substrate into a Decon-90 aqueous solution, deionized water and absolute ethyl alcohol, and respectively ultrasonically cleaning for 20 min.
2)UV-O 3 Processing the ITO substrate: and (3) treating the cleaned ITO substrate in UV-Ozone for 15-30 min.
3) Preparation of SnO 2 Electron transport layer: 80 μ L of SnO 2 The sol was directly spin-coated on the UV-Ozone treated ITO substrate at 3000rpm in air for 30s, and was placed on a hot stage and annealed at 150 ℃ for 30min in air.
4) Two-step method for preparing MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 Film formation: ITO/SnO treated by UV-Ozone 2 The substrate was placed in a glove box N 2 In the environment, a spin coater PbI is used 2 /PbCl 2 The mixed solution is coated on ITO/SnO in a spinning way 2 A substrate; then the MAI/FAI mixed solution is coated on ITO/SnO 2 A substrate. Finally, the ITO/SnO after spin coating 2 The substrate is placed on a hot bench for annealing to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 A substrate.
5) Preparing a spiroo hole transport layer: mixing ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 The substrate was placed in a glove box N 2 Spin coating a Spiro-OMeTAD solution on the ITO/SnO in the environment 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 On the substrate, the ITO/SnO after spin coating 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 And (3) placing the substrate at room temperature to obtain the Spiro-OMeTAD hole transport layer.
6) Preparation of MoO x A transmission buffer layer: by adopting the evaporation process, in ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 Deposition of 30nmMoO on a Spiro substrate x Transmitting the buffer layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro/MoO x A substrate.
7) Preparing an IZO conductive layer: adopts magnetron sputtering technology to perform reaction on ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro/MoO x Depositing 80nmIZO conductive layer on the substrate to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro/MoO x a/IZO substrate.
8) Preparing an Ag electrode: by adopting the evaporation process, in ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro/MoO x And depositing a 100nmAg electrode on the IZO substrate to finish the preparation of the perovskite solar cell.
9) Preparing a metal grid interlayer: by nanoimprint method on ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x Depositing 40nmNi metal grid on/IZO/Ag substrate to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x a/IZO/Ag/Ni substrate.
10) Mechanical stack of GaAs cells: and placing the GaAs battery anode on the metal grid intermediate layer, and curing by using ultraviolet curing adhesive to realize the bonding of the GaAs battery and the perovskite solar battery, thereby completing the mechanical lamination of the perovskite battery and the GaAs battery.
Example 2:
1) cleaning an ITO substrate: and sequentially placing the ITO glass substrate into a Decon-90 aqueous solution, deionized water and absolute ethyl alcohol, and respectively carrying out ultrasonic cleaning for 20 min.
2)UV-O 3 Processing the ITO substrate: and (3) placing the cleaned ITO substrate in UV-Ozone for treatment for 15-30 min.
3) Preparation of SnO 2 Electron transport layer: 80 μ L of SnO 2 The sol was spin-coated directly on the UV-Ozone treated ITO substrate in an air atmosphere at 3000rpm for 30s, and placed on a hot stage toAnnealing at 150 deg.C for 30min in air atmosphere.
4) Two-step method for preparing MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 Film formation: ITO/SnO treated by UV-Ozone 2 The substrate was placed in a glove box N 2 In the environment, a spin coater PbI is used 2 /PbCl 2 The mixed solution is coated on ITO/SnO in a spinning way 2 A substrate; then the MAI/FAI mixed solution is coated on ITO/SnO by spinning 2 On a substrate. Finally, the ITO/SnO after spin coating 2 The substrate is placed on a hot bench for annealing to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 A substrate.
5) Preparing a Spiro hole transport layer: mixing ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 The substrate was placed in a glove box N 2 Spin coating a Spiro-OMeTAD solution on the ITO/SnO in the environment 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 On the substrate, spin-coated ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 The substrate is placed at room temperature to obtain a Spiro-OMeTAD hole transport layer.
6) Preparation of MoO x A transmission buffer layer: by adopting the evaporation process, in ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 Deposition of 30nmMoO on a Spiro substrate x Transmitting the buffer layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro/MoO x A substrate.
7) Preparing an IZO conductive layer: adopts magnetron sputtering technology to perform reaction on ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro/MoO x Depositing 80nmIZO conductive layer on the substrate to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro/MoO x a/IZO substrate.
8) Preparing an Ag electrode: by adopting the evaporation process, the method has the advantages of simple process,in ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro/MoO x And depositing a 100nmAg electrode on the IZO substrate to finish the preparation of the perovskite solar cell.
9) Preparing a metal grid interlayer: by nanoimprint method on ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMETAD/MoO x Depositing 80nmNi metal grids on the/IZO/Ag substrate to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x a/IZO/Ag/Ni substrate.
10) Mechanical stack of GaAs cells: and placing the GaAs battery anode on the metal grid intermediate layer, and curing by using ultraviolet curing adhesive to realize the bonding of the GaAs battery and the perovskite solar battery, thereby completing the mechanical lamination of the perovskite battery and the GaAs battery.
Example 3:
1) cleaning an ITO substrate: and sequentially putting the ITO glass substrate into a Decon-90 aqueous solution, deionized water and absolute ethyl alcohol, and respectively ultrasonically cleaning for 20 min.
2)UV-O 3 Processing the ITO substrate: and (3) placing the cleaned ITO substrate in UV-Ozone for treatment for 15-30 min.
3) Preparation of SnO 2 Electron transport layer: 80 μ L of SnO 2 The sol was directly spin-coated on the UV-Ozone treated ITO substrate at 3000rpm in air for 30s, and was placed on a hot stage and annealed at 150 ℃ for 30min in air.
4) Preparation of FA by one-step method 0.83 Cs 0.17 PbI 3 -10％PbCl 2 Film formation: 142.8mgFAI and 461mgPbI 2 、44.2mgCsI、27.8mgPbCl 2 And 2.7609mgKPF 6 Dissolved in a mixed solvent of DMF and NMP (DMF: 500. mu.L; NMP: 96. mu.L) and stirred at room temperature for 6 hours for use. ITO/SnO treated by UV-Ozone 2 The substrate was placed in a glove box N 2 In the environment, 85 mu L of precursor solution is coated on the ITO/SnO in a spin coater at the rotating speed of 5000rpm for 50s 2 A substrate. Then, it is subjected to step annealingFirstly, the ITO/SnO is transferred to a hot bench at 70 ℃ for annealing for 5min, and then the ITO/SnO is obtained by transferring the ITO/SnO to an environment with the temperature of 25 ℃ and the relative humidity of 40% for annealing at 150 ℃ for 10min 2 /FA 0.83 Cs 0.17 PbI 3 -10％PbCl 2 A substrate.
5) Preparing a Spiro hole transport layer: mixing ITO/SnO 2 /FA 0.83 Cs 0.17 PbI 3 -10％PbCl 2 The substrate is placed in a glove box N 2 Spin coating a Spiro-OMeTAD solution on the ITO/SnO in the environment 2 /FA 0.83 Cs 0.17 PbI 3 -10％PbCl 2 On the substrate, spin-coated ITO/SnO 2 /FA 0.83 Cs 0.17 PbI 3 -10％PbCl 2 And (3) placing the substrate at room temperature to obtain the Spiro-OMeTAD hole transport layer.
6) Preparation of MoO x A transmission buffer layer: by adopting the evaporation process, in ITO/SnO 2 /FA 0.83 Cs 0.17 PbI 3 -10％PbCl 2 Deposition of 30nmMoO on/Spiro substrate x Transmitting the buffer layer to obtain ITO/SnO 2 /FA 0.83 Cs 0.17 PbI 3 -10％PbCl 2 /Spiro/MoO x A substrate.
7) Preparing an IZO conductive layer: adopts magnetron sputtering technology to perform reaction on ITO/SnO 2 /FA 0.83 Cs 0.17 PbI 3 -10％PbCl 2 /Spiro/MoO x Depositing 80nmIZO conductive layer on the substrate to obtain ITO/SnO 2 /FA 0.83 Cs 0.17 PbI 3 -10％PbCl 2 /Spiro/MoO x a/IZO substrate.
8) Preparing an Ag electrode: by adopting the evaporation process, in ITO/SnO 2 /FA 0.83 Cs 0.17 PbI 3 -10％PbCl 2 /Spiro/MoO x And depositing a 100nmAg electrode on the IZO substrate to finish the preparation of the perovskite solar cell.
9) Preparing a metal grid interlayer: by nano-imprinting method on ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x Depositing 40nmNi metal grid on/IZO/Ag substrate to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x a/IZO/Ag/Ni substrate.
10) Mechanical stack of GaAs cells: and placing the GaAs battery anode on the metal grid intermediate layer, and curing by using ultraviolet curing adhesive to realize the bonding of the GaAs battery and the perovskite solar battery, thereby completing the mechanical lamination of the perovskite battery and the GaAs battery.
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.
Claims (10)
1. The perovskite/GaAs two-end mechanical laminated solar cell is characterized by comprising a perovskite top cell, a metal grid interconnection layer and a GaAs cell, wherein the GaAs cell is positioned on the metal grid interconnection layer, the metal grid interconnection layer is positioned on the perovskite top cell, and the perovskite top cell is bonded with the GaAs cell through the metal grid interconnection layer so as to reduce the efficiency damage to the GaAs cell and weaken the current loss caused by micron-scale fluctuation on the surface of the GaAs cell.
2. The perovskite/GaAs two-terminal mechanical tandem solar cell of the metal grid interconnection layer of claim 1, wherein the metal grid interconnection layer achieves electrical interconnection and optical coupling of the perovskite top cell and the GaAs cell by means of mechanical stacking.
3. The perovskite/GaAs two-terminal mechanical tandem solar cell of the metal grid interconnection layer as claimed in claim 1, wherein the structure of the perovskite solar cell can be a formal or a trans structure.
4. Metal according to claim 1The perovskite/GaAs both ends mechanical stromatolite solar cell of net interconnection layer, its characterized in that, perovskite top cell includes ITO conductive glass (1), electron transport layer (2), perovskite light absorption layer (3), hole transport layer (4), MoO from bottom to top x The ITO conductive glass comprises a transmission buffer layer (5), an oxide transparent conductive film (6), an Ag gate electrode (7), a metal grid interconnection layer (8) and a GaAs battery (9), wherein an anode is arranged on the GaAs battery, and a cathode is arranged on the ITO conductive glass (1).
5. A method for preparing a perovskite/GaAs two-terminal mechanical tandem solar cell of a metal grid interconnection layer, the perovskite/GaAs two-terminal mechanical tandem solar cell of the metal grid interconnection layer as claimed in any one of claims 1 to 4, the method comprising:
step 1: obtaining an ITO substrate and cleaning;
step 2: preparing an electron transmission layer on the cleaned ITO substrate by spin coating;
and step 3: placing the structure formed in step 2 in a glove box N 2 In the environment, a spin coater PbI is used 2 /PbCl 2 The mixed solution is spin-coated on the electron transport layer, and then the MAI/FAI mixed solution is spin-coated to obtain a perovskite light absorption layer;
and 4, step 4: the structure formed in step 3 was placed in a glove box N 2 In the environment, spin-coating a Spiro-OMeTAD solution on the perovskite light absorption layer to obtain a hole transport layer;
and 5: MoO deposition on the structure formed in step 4 by means of an evaporation process x To obtain MoO x A transmission buffer layer;
step 6: depositing IZO conductive material on the structure formed in the step 5 by adopting a magnetron sputtering process to obtain an oxide transparent conductive film;
and 7: depositing an Ag electrode on the oxide transparent conductive film by using an evaporation process to finish the preparation of the perovskite solar cell;
and 8: depositing a metal grid on the perovskite solar cell to obtain a metal grid interconnection layer;
and step 9: and placing the GaAs battery anode on the metal grid interconnection layer, and curing by using ultraviolet curing adhesive to realize the bonding of the GaAs battery and the perovskite solar battery and complete the mechanical laminated bonding of the perovskite battery and the GaAs battery.
6. The method for preparing a perovskite/GaAs two-terminal mechanical tandem solar cell of a metal grid interconnection layer as claimed in claim 5, wherein said step 1 comprises:
sequentially putting the ITO glass substrate into a Decon-90 aqueous solution, deionized water and absolute ethyl alcohol, and respectively ultrasonically cleaning for 15-20 min;
and (3) treating the cleaned ITO substrate in UV-Ozone for 15-30 min.
7. The method for preparing a perovskite/GaAs two-terminal mechanical tandem solar cell of a metal grid interconnection layer as claimed in claim 5, wherein said step 2 comprises:
80 μ L of SnO 2 The sol is directly coated on an ITO substrate treated by UV-Ozone in a spinning way for 30s at the rotating speed of 3000rpm in an air environment, and then is placed on a hot table, and the annealing is carried out for 30min at the temperature of 150 ℃ in the air environment, so as to obtain the electron transmission layer.
8. The method for preparing a perovskite/GaAs two-terminal mechanical tandem solar cell of a metal grid interconnection layer as claimed in claim 5, wherein said step 3 comprises:
placing the structure formed in the step 2 in a glove box N 2 In the environment, a spin coater is used for mixing PbI 2 /PbCl 2 The mixed solution is spin-coated on the perovskite light absorption layer; then, spin-coating by using an MAI/FAI mixed solution;
and placing the formed structure after spin coating on a hot table for annealing to obtain the hole transport layer.
9. The method for preparing a perovskite/GaAs two-terminal mechanical tandem solar cell of a metal grid interconnection layer as claimed in claim 5, wherein,
ITO linerThe base substrate comprises glass and an ITO conducting layer; the thickness of the glass is 0.5mm-1mm, and the thickness of the ITO conductive layer is 50-200 nm; the thickness of the electron transmission layer is 50nm-100 nm; the thickness of the perovskite light absorption layer is 100nm-800 nm; MoO x The thickness of the transmission buffer layer is 10nm-80 nm; the deposition thickness of the IZO conductive material is 50nm-200 nm; the thickness of the Ag electrode is 30nm-150 nm; the thickness of the metal grid interconnection layer is 10nm-300 nm.
10. The method for preparing a perovskite/GaAs two-terminal mechanical tandem solar cell of a metal grid interconnection layer as claimed in claim 9, wherein,
the efficiency of the mechanical laminated solar cell is improved by preparing a dielectric antireflection layer on the glass of the ITO substrate.
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