CN114999987A - Chuck, substrate holding device, substrate processing device, and method for manufacturing article - Google Patents
Chuck, substrate holding device, substrate processing device, and method for manufacturing article Download PDFInfo
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- CN114999987A CN114999987A CN202210197923.5A CN202210197923A CN114999987A CN 114999987 A CN114999987 A CN 114999987A CN 202210197923 A CN202210197923 A CN 202210197923A CN 114999987 A CN114999987 A CN 114999987A
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- convex portion
- chuck
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Abstract
The invention provides a chuck, a substrate holding device, a substrate processing device and a method for manufacturing an article, wherein the substrate twisting can be reduced by making the heights of a convex part on the inner circumference side and a convex part on the outer circumference side have a specified relation. The chuck is a chuck for holding a substrate by suction, and is characterized by comprising: a plurality of projections which abut against the back surface of the substrate held by suction; an annular partition wall; and a bottom portion on which a plurality of convex portions and partition walls are arranged, the plurality of convex portions being formed of a plurality of groups in which a first convex portion arranged outside the partition wall and a second convex portion arranged inside the partition wall and at a position adjacent to the first convex portion with the partition wall interposed therebetween are formed into one group, and hi > ho being satisfied when the height of the first convex portion included in each of the plurality of groups is ho and the height of the second convex portion included in each of the plurality of groups is hi.
Description
Technical Field
The invention relates to a chuck, a substrate holding device, a substrate processing device and a method for manufacturing an article.
Background
In recent years, a reduction projection exposure apparatus used for manufacturing a semiconductor device or the like has been increased in NA in order to cope with miniaturization of the device. By increasing NA, resolution is improved, but effective depth of focus is reduced. Therefore, in order to ensure a sufficient practical depth while maintaining the resolution, improvements in the flatness of the wafer (flatness of the substrate surface) such as reduction of the field curvature of the projection optical system, improvement of the thickness unevenness of the wafer (substrate), and improvement of the flatness accuracy of the chuck for holding the wafer by suction are sought.
As a cause of lowering the flatness of the substrate surface, foreign matter may be interposed between the chuck and the substrate. If a foreign object is caught, the following may occur: the substrate with the sandwiched portion is deformed in a bulging manner, and a pattern formed on the substrate is poorly formed, thereby reducing the yield. In order to avoid such a reduction in yield due to foreign matter with a high probability, a pin contact chuck (pin chuck) using so-called pins (protrusions) is used, which significantly reduces the contact rate between the chuck and the substrate.
When the pin chuck is used, the substrate is deformed by the vacuum suction force between the convex portions and is bent (twisted), and the substrate is deformed, and the flatness of the substrate surface may be lowered.
For example, in japanese patent No. 4298078, an annular partition wall (barrier) surrounding a plurality of convex portions is provided in a pin chuck, and the partition wall is disposed between the convex portion on the outer circumferential side and the convex portion on the inner circumferential side, which is a convex portion adjacent to the convex portion on the outer circumferential side. The partition is disposed as close to the convex portion on the outer peripheral side as possible.
In japanese patent application laid-open No. 2001-185607, the partition wall is disposed at a position outside the convex portion disposed on the outermost periphery side, or between the convex portion on the outermost periphery side and the convex portion on the inner periphery side adjacent to the convex portion on the outermost periphery side. The partition wall is disposed at a position within a predetermined range in the outer circumferential direction from the center of the distance between the outermost convex portion and the inner convex portion adjacent to the outermost convex portion.
When the substrate is vacuum-sucked, the inner side of the partition wall is kept at substantially vacuum pressure and suction force is generated, but the outer side of the partition wall becomes atmospheric pressure and suction force is not substantially generated. In japanese patent 4298078 and japanese patent laid-open nos. 2001-185607, the partition walls are arranged at positions close to the outer peripheral side convex portions in order to make the adsorption force act on the outer side of the substrate as much as possible. However, since the suction force acts on the outer side of the substrate, there is a problem that the flatness of the substrate surface is reduced and the warpage (distortion) of the substrate becomes large.
Disclosure of Invention
In the present invention, it is an object to provide a chuck capable of reducing warpage of a substrate by setting the heights of a convex portion on the inner peripheral side and a convex portion on the outer peripheral side to a predetermined relationship, for example.
A chuck according to an aspect of the present invention includes: a plurality of projections which abut against the back surface of the substrate held by suction; an annular partition wall; and a bottom portion in which a plurality of convex portions and partition walls are arranged, the plurality of convex portions being formed of a plurality of groups in which a first convex portion arranged outside the partition wall and a second convex portion arranged inside the partition wall and at a position adjacent to the first convex portion with the partition wall interposed therebetween are formed into one group, and hi > ho being satisfied when the height of the first convex portion included in each of the plurality of groups is ho and the height of the second convex portion included in each of the plurality of groups is hi.
Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings.
Drawings
Fig. 1 is a schematic diagram illustrating the configuration of an exposure apparatus of example 1.
Fig. 2 is a diagram illustrating a material mechanics model of a unilaterally fixed and unilaterally free beam subjected to a uniformly distributed load.
Fig. 3A and 3B are diagrams illustrating a substrate holding apparatus of embodiment 1.
Fig. 4 is a diagram illustrating a material mechanics model of a cantilever beam.
Fig. 5 is a diagram illustrating a cross-sectional view of a chuck of example 1.
Fig. 6A and 6B are diagrams illustrating a substrate holding apparatus of embodiment 3.
Fig. 7 is a flowchart illustrating a manufacturing process of the device.
Fig. 8 is a flow chart illustrating a wafer process.
Fig. 9A and 9B are diagrams illustrating a pin chuck used in a general substrate holding apparatus.
Detailed Description
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings by way of examples and drawings. In the drawings, the same members or elements are denoted by the same reference numerals, and redundant description is omitted or simplified.
(example 1)
Fig. 1 is a configuration diagram schematically illustrating the configuration of an exposure apparatus 100 according to example 1. The exposure apparatus 100 is an apparatus capable of irradiating and curing a resist with light (exposure light) irradiated from a light source, and forming a pattern of a cured product to which the pattern formed on the reticle 104 is transferred.
Hereinafter, a direction parallel to the optical axis of light irradiated to the resist on the substrate 110 is referred to as a Z-axis direction, and 2 directions orthogonal to each other in a plane perpendicular to the Z-axis direction are referred to as an X-axis direction and a Y-axis direction. The exposure apparatus 100 according to embodiment 1 can be applied to an apparatus that sequentially drives and focuses a plurality of pattern formation regions (exposure regions), an apparatus that sequentially performs exposure (a projection exposure apparatus, a substrate processing apparatus), and the like. The exposure apparatus 100 of example 1 is described below with reference to fig. 1. The exposure apparatus 100 of example 1 is described as a step-and-repeat exposure apparatus.
The substrate (wafer) 110 is a substrate to be processed having a surface coated with a photosensitive agent (resist) that efficiently causes a chemical reaction by exposure light. The substrate 110 is made of glass, ceramic, metal, silicon, resin, or the like, and a member made of a material different from that of the substrate 110 may be formed on the surface thereof as needed. The substrate 110 may be a gallium arsenide wafer, a composite bonded wafer, a glass wafer made of a material containing quartz, a liquid crystal panel substrate, a reticle, or other various substrates, or may have an outer shape not only circular but also square.
The reticle (original plate) 104 is mounted on a reticle stage 103, and the reticle stage 103 is configured to be movable in a plane orthogonal to the optical axis of the projection optical system 106 and in the optical axis direction. The reticle 104 has a rectangular outer peripheral shape and has a pattern portion having a three-dimensional pattern (an uneven pattern to be transferred onto a substrate such as a circuit pattern) formed on a surface (pattern surface) facing the substrate 110. The reticle 104 is made of a material that can transmit light, for example, quartz.
The exposure apparatus 100 according to embodiment 1 also functions as a substrate processing apparatus, and includes a substrate holding apparatus 101, a substrate mounting table 102, a reticle mounting table 103, an illumination optical system 105, a projection optical system 106, an off-axis mirror 107, a measurement unit 108, and a control unit 109.
The substrate holding apparatus 101 includes: a chuck 1 for holding the substrate 110 by suction; a suction unit (not shown) as a vacuum source for sucking (exhausting) a space between the back surface of the substrate 110 and the chuck 1; and a control unit, not shown, for controlling the suction unit. The substrate holding apparatus 101 of embodiment 1 will be described in detail later.
The substrate mounting table 102 includes: a θ Z tilt table for holding the substrate 110 via the substrate holding device 101; an XY stage, not shown, for supporting the θ Z tilt stage; and a base, not shown, for supporting the XY stage. The substrate mounting table 102 is driven by a driving device (not shown) such as a linear motor. The driving device can be driven in the 6 axial directions X, Y, Z, θ X, θ Y, and θ Z, and is controlled by the control unit 109 to be described later. Further, although the driving device can drive in 6 axial directions, it may be able to drive in any one of 1 axial direction to 6 axial directions.
The reticle stage 103 is movable in a plane perpendicular to an optical axis of a projection optical system 106 to be described later, that is, an XY plane, and is rotatable in the θ Z direction, for example. The reticle stage 103 is driven by a driving device (not shown) such as a linear motor, and the driving device can be driven in 3 axial directions of X, Y and θ Z and is controlled by a control unit 109 to be described later. In addition, although the driving device can drive in 3 axial directions, it may be able to drive in any one of 1 axial direction to 6 axial directions.
The illumination optical system 105 includes a light source (not shown) and illuminates the reticle 104 on which a circuit pattern for transfer (reticle pattern) is formed. As the light source included in the light source, for example, a laser is used. The lasers that can be used are ArF excimer laser having a wavelength of about 193nm, KrF excimer laser having a wavelength of about 248nm, F2 excimer laser having a wavelength of about 157nm, and the like. The type of laser is not limited to an excimer laser, and for example, a YAG laser may be used, and the number of lasers is not limited. When a laser is used as the light source unit, a beam shaping optical system for shaping a parallel light beam from the laser light source into a desired beam shape or an incoherent optical system for incoherent drying a coherent laser is preferably used. The light source that can be used is not limited to a laser, and one or more lamps such as a mercury lamp and a xenon lamp can be used.
Further, although not shown, the illumination optical system 105 includes a lens, a mirror, a light integrator, an aperture, and the like. Generally, the internal optical system is arranged in the order of a condenser lens, a fly eye, an aperture stop, a condenser lens, a slit, and an imaging optical system. In this case, the light integrator includes an integrator or the like configured by overlapping a fly-eye lens and two sets of cylindrical lens array plates.
The projection optical system 106 forms diffracted light of a pattern on the reticle 104 illuminated with the exposure light from the illumination optical system 105 on the substrate 110 at a predetermined magnification (for example, 1/2, 1/4, or 1/5) to cause interference. The interference image formed on the substrate 110 forms substantially the same image as the reticle pattern. The interference image is generally referred to as an optical image, and the shape of the optical image determines the line width formed on the substrate 110. The projection optical system 106 can employ an optical system composed of only a plurality of optical elements, or an optical system (catadioptric optical system) composed of a plurality of optical elements and at least one concave mirror. Alternatively, as the projection optical system 106, an optical system including a plurality of optical elements and at least one diffractive optical element such as a kinoform, a total reflection mirror type optical system, or the like can be used.
The off-axis mirror 107 is used to position the substrate 110 and to detect the positions of the plurality of patterning regions of the substrate 110. The relative positions of the reference mark disposed on the substrate mounting base 102 and the mark formed on the substrate 110 mounted on the substrate mounting base 102 can be detected and measured. The measurement unit (surface position measurement means) 108 is a measurement device capable of aligning the focus of the projection optical system 106 with the exposure target region of the substrate 110, and constitutes a focusing device for aligning the focus of the projection optical system 106 with the substrate surface.
The control unit 109 includes a CPU, a memory (storage unit), and the like, is configured by at least one computer, and is connected to each component of the exposure apparatus 100 via a line. The control unit 109 also collectively controls operations, adjustments, and the like of the respective components of the entire exposure apparatus 100 in accordance with a program stored in the memory. The control unit 109 may be configured integrally with (in a common housing) other parts of the exposure apparatus 100, may be configured separately from (in a different housing) other parts of the exposure apparatus 100, or may be provided at a different location from the exposure apparatus 100 and remotely controlled.
Here, the exposure sequence of the exposure apparatus 100 is described below. The operations (processes) shown in the exposure sequence are controlled by the control unit 109 executing a computer program. When the exposure sequence is started, the operation of the exposure apparatus 100 is started in accordance with an exposure start command from a state in which the substrate 110 is set in the exposure apparatus 100 automatically or by the hand of the operator.
First, the first substrate 110 to be exposed first is carried into a substrate carrier in the exposure apparatus 100 by a carrying mechanism (not shown) (carrying-in step). Next, the substrate 110 is carried by the carrying mechanism to the chuck 1 mounted on the substrate mounting base 102, and is sucked and held by the substrate holding device 101 (substrate holding step).
Next, a plurality of marks formed on the substrate 110 are detected by the off-axis mirror 107 mounted on the exposure apparatus 100, and the magnification, rotation, and offset amounts in the X-axis and Y-axis directions of the substrate 110 are specified, and position correction is performed (position alignment step).
Next, the substrate mounting table 102 moves the substrate 110 so that a predetermined pattern forming region of the mounted substrate 110 to be exposed first is aligned with the exposure position of the exposure apparatus 100. Next, after focusing is performed by the measuring unit 108, light is irradiated from a light source, and the light is reduced at a predetermined magnification by the projection optical system 106 via the illumination optical system 105 and the reticle (pattern forming unit) 104, and then the resist applied on the substrate 110 is irradiated. The resist applied in the predetermined pattern forming region is exposed for a predetermined time (exposure step). The exposure time is, for example, about 0.2 seconds.
Next, the substrate mounting table 102 moves (step-by-step moves) the substrate 110 to the next pattern forming region, and performs exposure on the substrate 110 in the same manner as described above. The same pattern forming process is sequentially repeated until the exposure is completed in all the pattern forming regions where the exposure is performed. This enables formation of a pattern formed on the reticle 104 on 1 substrate 110. Then, the substrate 110, which is transferred from the chuck 1 to a recovery transfer hand (not shown), is returned to the substrate carrier in the exposure apparatus 100 (carrying-out step). After the substrate 110 is carried out, the substrate 110 is subjected to a treatment such as etching, the substrate 110 is processed (processing step), and unnecessary cured products and the like are removed from the processed substrate 110, whereby an article can be manufactured.
In embodiment 1, the step-and-repeat exposure apparatus is assumed as described above, but the present invention is not limited thereto, and can be applied to a scanning type exposure apparatus. When applied to a scanning exposure apparatus, the original plate 104 and the substrate 110 are scanned in synchronization with each other based on the exposure magnification, and exposure is performed during scanning.
In addition, the substrate holding apparatus 101 of embodiment 1 is not limited to use in the exposure apparatus 100. For example, the present invention can also be used for manufacturing a substrate processing apparatus including an imprint apparatus (lithography apparatus) or the like, a liquid crystal substrate manufacturing apparatus, a magnetic head manufacturing apparatus, a semiconductor inspection apparatus, a liquid crystal substrate inspection apparatus, a magnetic head inspection apparatus, a micromachine, and the like.
Here, when the chuck 1 is caused to hold the substrate 110 by suction, foreign matter may be interposed between the substrate 110 and the chuck 1. For example, even if a foreign substance of about several μm is present, if the foreign substance is sandwiched, the substrate 110 in the sandwiched portion is deformed and partially rises, and a pattern forming failure may occur. For example, the effective focal depth may be 1 μm or less.
In order to avoid such foreign matter entrapment, a so-called pin contact chuck (hereinafter referred to as a chuck) in which a portion abutting the back surface of the substrate 110 is formed as a pin-shaped convex portion is used, and a contact area with the substrate 110 is significantly reduced. Next, a chuck used in a conventional general substrate holding apparatus will be described with reference to fig. 9.
Fig. 9 is a diagram illustrating a chuck 200 used in a general substrate holding apparatus. Fig. 9A is a plan view of the chuck 200 viewed from the + Z direction. Fig. 9B is a partial cross-sectional view of the chuck 200 shown in fig. 9A. The substrate holding apparatus illustrated in fig. 9 includes a chuck 200, a convex portion 201, a partition 204, and a suction port 205.
The convex portion 201 functions as a contact surface (a support surface that supports the substrate after the substrate is placed) that contacts the back surface of the substrate 110. The plurality of pin-shaped protrusions 201 include a pin-shaped protrusion (outer circumferential protrusion) 202, a pin-shaped protrusion (inner circumferential protrusion) 203, and a plurality of pin-shaped protrusions different from the outer circumferential protrusion 202 and the inner circumferential protrusion 203.
The partition wall 204 is annularly provided at the bottom of the chuck 200 so as to be located inward of the outer peripheral convex portion 202. The height of the partition 204 is about 1 to 2 μm lower than the upper surface of the outer peripheral convex part 202. The suction port 205 is a through hole formed in the bottom of the chuck 200, and is connected to a flow path formed by a pipe or the like communicating with a vacuum source (suction portion) not shown.
The outer peripheral side projection 202 is disposed outside the partition wall 204 so as to abut against the rear surface of the substrate 110 in the outer peripheral direction. The outer circumferential protrusions 202 are arranged in plural on the outer circumference having the same radius as the substrate 110. The outer peripheral convex portion 202 illustrated in fig. 9 is a convex portion disposed on the outermost periphery (outermost periphery) of the chuck 200. The inner peripheral protrusion 203 is disposed on the inner side of the partition 204 so as to abut against the inner peripheral rear surface of the substrate 110. A plurality of inner peripheral protrusions 203 are arranged on the inner periphery having the same radius as the substrate 110. The inner circumferential protrusion 203 illustrated in fig. 9 is disposed adjacent to the outer circumferential protrusion 202 disposed at the bottom of the outermost circumference with a partition 204 interposed therebetween. The plurality of pin-shaped protrusions 201 of the chuck 200 are arranged in a grid pattern at predetermined intervals (intervals, periods, widths). Further, an outer-peripheral-side convex portion 202 disposed outside the partition wall 204 and an inner-peripheral-side convex portion 203 disposed inside the partition wall 204 and adjacent to the outer-peripheral-side convex portion 202 via the partition wall 204 are configured as a set. The plurality of convex portions formed of the outer-peripheral convex portions 202 and the inner-peripheral convex portions 203 are formed of a plurality of groups including the respective groups.
Hereinafter, a method of sucking the substrate 110 by the chuck 200 configured as described above will be described. First, the substrate 110 is placed on the convex portion 201 of the chuck 200. Thereby, the back surface of the substrate 110 abuts on the plurality of convex portions 201. Next, the substrate 110 is vacuum-sucked through the suction port 205 by the operation of a vacuum source, not shown, and the substrate 110 is supported by the convex portion 201 of the chuck 200 and is sucked and held. At this time, the substrate 110 is deformed and deflected between the convex portions 201 by the vacuum suction force. The substrate 110 is bent, whereby the flatness of the substrate 110 is lowered, and so-called wafer distortion (hereinafter referred to as distortion) occurs. This reduces the flatness of the substrate 110.
Next, the flatness and the amount of distortion of the substrate 110 at the outer circumferential convex portion 202 will be described with reference to fig. 2, which shows an example of the arrangement position of the partition wall 204 illustrated in fig. 9B, based on a material mechanics model. Fig. 2 is a diagram illustrating a material mechanics model of a unilaterally fixed and unilaterally free beam subjected to a uniformly distributed load. The material mechanics model of the deflected state of the substrate 110 in the outer peripheral region (outer peripheral portion) of the chuck 200 is applied to the model illustrated in fig. 2. As illustrated in fig. 9B, the partition 204 is disposed closer to the outer-peripheral-side convex portion 202 than the inner-peripheral-side convex portion 203.
The young's modulus of the substrate 110 is denoted as E, and the thickness of the substrate 110 is denoted as h. Next, the distance between the outer-peripheral-side convex portion 202 and the inner-peripheral-side convex portion 203 included in the plurality of groups is set to L. The urging force per unit length is denoted by w, the deflection amount is denoted by y, and the radial position with respect to the inner peripheral side convex portion 203 is denoted by x. The distance L may be an average value of the distances between the outer-peripheral-side convex portions 202 and the inner-peripheral-side convex portions 203 of each of the plurality of groups.
The gradient dy/dx in the above formula (1) is the largest when x is L, and is represented by the following formula (2).
Here, the sign in the above equation (2) indicates that the inclination dy/dx is the rotation direction around the counterclockwise direction (CCW). When the suction pressure of the vacuum source is set to the suction pressure Pv and the depth is set to b, the force w per unit length is expressed by the following equation (3).
w＝Pvb (3)
Here, the second moment of area E of the one-sided free beam is 1/12bh 3 If the above formula (3) is substituted into the above formula (2), the following formula (4) is obtained.
Mathematical formula 4
The distortion dx is expressed by the following formula (5).
Strictly speaking, the outer peripheral side convex portion 202 supports the substrate 110 not at the center portion of the outer peripheral side convex portion 202 (the support surface on the central axis of the outer peripheral side convex portion) but at a corner portion deviated from the center portion due to deformation of the substrate 110 when a load is applied to the substrate 110 by suction or the like. Therefore, strictly speaking, the distance l (mm) in this case is a distance from a corner of the outer-peripheral convex portion 202 with respect to the center direction of the substrate 110 to the central axis of the inner-peripheral convex portion 203 disposed adjacent to the outer-peripheral convex portion with the partition wall 204 interposed therebetween. In calculating the distortion, the distance L is used in the calculation of the distortion because the longer the distance in the distance L, the larger the distortion.
In general chuck design values, when E is 160GPa, Pv is 0.1MPa, L is 2mm, and h is 0.7mm, the value of dx is 1.29 nm. For example, if the tolerance of the overlay error with respect to the reference of the ideal level is 1.5nm as an example, only 0.29nm remains. Further, even if the tolerance of the overlay error with respect to the reference of the ideal level is, for example, 3nm or 5nm, the distortion of 1.29nm has a large influence on the process of forming a pattern on the substrate. Therefore, after the substrate 110 is sucked and held, the substrate 110 needs to be sucked and held in a state where distortion is reduced in order to perform processing such as pattern formation.
Therefore, in example 1, it is possible to provide a chuck capable of reducing distortion by setting the heights of the inner circumferential convex portions 4 and the outer circumferential convex portions 3 to be described later to a predetermined relationship. Next, the substrate holding apparatus 101 of embodiment 1 will be described in detail with reference to fig. 3, 4, and 5.
Fig. 3 is a diagram illustrating the substrate holding apparatus 101 of embodiment 1. Fig. 3A is a plan view of the substrate holding apparatus 101 viewed from the + Z direction. Fig. 3B is a partial sectional view of the substrate holding device 101 of fig. 3A. Next, the substrate holding apparatus 101 of embodiment 1 will be described in detail with reference to fig. 3. The substrate holding apparatus 101 of embodiment 1 includes a chuck 1, and a suction unit and a control unit, which are not shown.
The chuck 1 is formed in a circular shape having a diameter smaller than that of the substrate 110, and includes a plurality of pin-shaped protrusions 2, partition walls (first partition walls) 5, and suction ports (first suction ports) 6. The chuck 1 is disposed on the substrate mounting table 102.
The convex portions 2 are pin-shaped convex portions arranged in plural at the bottom of the chuck 1, and when the substrate 110 is placed on the chuck 1, the back surface of the substrate 110 abuts on the upper surface of the convex portions 2. The protrusions 2 are arranged in a grid pattern at the bottom of the chuck 1 at a predetermined distance l (mm). The diameter of the projection 2 varies depending on the specification of the chuck 1, but is generally about 0.2 mm. The convex portions 2 may be arranged not only in a lattice shape but also in concentric circles or in an angled shape, for example, in a 60-degree staggered manner in a lattice shape. Further, the array may be a random array, or an array in which these are combined.
The convex portions 2 include a plurality of pin-shaped convex portions (outer-peripheral convex portions, first convex portions) 3, a plurality of pin-shaped convex portions (inner-peripheral convex portions, second convex portions) 4, and a plurality of pin-shaped convex portions (third convex portions) different from the outer-peripheral convex portions 3 and the inner-peripheral convex portions 4. The outer peripheral side projection 3 is disposed outside the partition wall 5 so as to abut against the rear surface of the substrate 110 in the outer peripheral direction. The outer-peripheral-side convex portion 3 is a plurality of convex portions arranged on the outer periphery having the same radius as the substrate 110. The outer peripheral convex portion 3 illustrated in fig. 3 is disposed on the outermost periphery (outermost periphery) of the chuck 1. The inner peripheral protrusion 4 is disposed inside the partition wall 5 so as to abut against the inner peripheral rear surface of the substrate 110. A plurality of inner peripheral protrusions 4 are arranged on the inner periphery having the same radius as the substrate 110. Further, the inner peripheral side projection 4 is disposed adjacent to the outer peripheral side projection 3 disposed at the bottom portion on the outermost periphery side via the partition wall 5. In example 1, the plurality of convex portions 2 other than the third convex portions are constituted by a plurality of groups including, as one group, outer-peripheral-side convex portions 3 disposed outside the bulkheads 5 and inner-peripheral-side convex portions 4 disposed inside the bulkheads 5 and adjacent to the outer-peripheral-side convex portions 3 with the bulkheads 5 interposed therebetween. As described later, the outer-peripheral-side convex portions 3 included in each of the plurality of groups are formed to have a lower height than the inner-peripheral-side convex portions 4.
At least one partition wall 5 is disposed in an annular shape at the bottom of the chuck 1 so as to surround a part of the plurality of protrusions 2. The suction port 6 is a through hole formed in the chuck 1, and in embodiment 1, a suction portion described later functions as a suction port when sucking (exhausting) a space between the back surface of the substrate 110 and the chuck 1. In addition, although only one suction port 6 is provided in fig. 3, the present invention is not limited to this, and one or more suction ports 6 may be formed in the chuck 1.
The suction unit is a vacuum source, not shown, configured to be capable of sucking a space between the back surface of the substrate 110 and the chuck 1 by vacuum suction or the like. The suction unit starts operation in response to a signal from the control unit 109, and sucks the space between the back surface of the substrate 110 and the chuck 1 through a flow path such as a pipe connected to the suction unit and the suction port 6, thereby allowing the substrate 110 to be sucked onto the chuck 1. The suction unit is not limited to being disposed on the substrate holding apparatus 101, and may be disposed outside the substrate holding apparatus 101 or outside the exposure apparatus 100.
Next, the height of the outer circumferential convex portion 3 included in each of the plurality of groups (hereinafter referred to as a plurality of groups) is represented by ho. The height of the inner peripheral side projection 4 included in each of the plurality of groups is denoted by hi, and a desired ho value will be described below with reference to fig. 4 and 5. In example 1, ho is the average height of the outer-peripheral-side protrusions 3 included in each of the plurality of groups, and hi is the average height of the inner-peripheral-side protrusions 4 included in each of the plurality of groups. Fig. 4 is a diagram illustrating a mechanical model of a cantilever beam in the case where the outer peripheral side convex portion 3 of example 1 is not provided. Fig. 5 is a diagram illustrating a cross-sectional view of the chuck 1 of embodiment 1.
Fig. 5 shows a flexural mode 2min of the substrate 110 and a flexural mode 2j of the substrate 110 when ho is hi in the case where the outer-peripheral-side convex portion 3 is not present as shown in fig. 4.
Here, the inclination of the deflection model illustrated in fig. 5 is dy/dx, the degree of deflection is y, the radial position of the inner circumferential protrusion 4 as a reference is x, and the distance between the outer circumferential protrusion 3 and the inner circumferential protrusion 4 included in each of the plurality of groups is L. Thus, the inclination dy/dx with respect to u ═ x/L can be expressed by the following formula (6), and the degree of flexibility y can be expressed by the following formula (7).
Mathematical formula 6
When u is 1, ymax can be represented by the following formula (8).
Mathematical formula 7
The above formula (8) indicates that when ho is less than hi- (PvL) 4 )/(Eh 3 ) The back surface of the substrate 110 does not contact the support surface of the outer peripheral convex portion 3. Therefore, by satisfying the following expression (9), the inclination dy/dx can be reduced as compared with the case where hi is ho, and distortion can be reduced.
The height of the partition wall 5 is set to be lower than the inner circumferential protrusions 4 included in each of the plurality of groups and equal to or lower than the outer circumferential protrusions 3 included in each of the plurality of groups. This is because if the partition walls 5 are made higher than the outer circumferential-side convex portions 3 included in each of the plurality of groups, the partition walls 5 perform the same function as the outer circumferential-side convex portions 3 included in each of the plurality of groups. The partition wall 5 is disposed at a position closer to the outer-peripheral-side convex portions 3 included in each of the plurality of groups than to the inner-peripheral-side convex portions 4 included in each of the plurality of groups. The arrangement position of the partition walls 5 at this time is arranged after comparing the average values of the positions of the convex portions included in each of the plurality of groups. It is preferable that the barrier ribs 5 be disposed at positions as close as possible to the outer circumferential convex portions 3 included in the plurality of groups, and in example 1, the barrier ribs 5 are disposed so as to have u ≈ 1.
As described above, in example 1, the composition was prepared so as to satisfy hi-ho < (PvL) 4 )/(Eh 3 ) The method of (1) can reduce distortion by setting the height of hi relative to ho. This makes it possible to provide a card capable of holding the substrate 110 by suction in an optimum state after performing a process such as pattern formationAnd (4) a disc.
When the formula (8) is substituted with Pv of 0.1013MPa, L of 2mm, and E of 160GPa, for example, the ymax of h of 0.7mm is 44.3 nm. In this case, the distortion can be reduced by designing hi-ho to be smaller than about 45nm, for example.
(example 2)
The substrate holding apparatus 101 of example 2 is a substrate holding apparatus in which the cross-sectional area of the outer-peripheral convex portions 3 included in each of the plurality of groups (hereinafter, referred to as a plurality of groups) shown in example 1 is smaller than the cross-sectional area of the inner-peripheral convex portions 4 included in each of the plurality of groups. The configuration of the substrate holding apparatus 101 is the same as that of the substrate holding apparatus 101 of embodiment 1, and therefore, the description of the overlapping portions is omitted.
In example 2, when the cross-sectional area of the outer-peripheral-side convex portions 3 included in each of the plurality of groups is So and the cross-sectional area of the inner-peripheral-side convex portions 4 included in each of the plurality of groups is Si, the outer-peripheral-side convex portions 3 and the inner-peripheral-side convex portions 4 are designed and processed So as to make Si > So. This reduces the machining resistance of the outer circumferential convex portion 3 during machining, and facilitates machining of the convex portion. In example 2, So represents an average value of the cross-sectional areas of the outer-peripheral convex portions 3 included in each of the plurality of groups, and Si represents an average value of the cross-sectional areas of the inner-peripheral convex portions 4 included in each of the plurality of groups.
Further, by reducing the machining resistance, the removal amount of the outer-peripheral-side convex portions 3 included in each of the plurality of groups increases, and as a result, it contributes to hi > ho. The rigidity in the vertical direction of the outer peripheral side convex portions 3 included in each of the plurality of groups is smaller than the rigidity in the vertical direction of the inner peripheral side convex portions 4 included in each of the plurality of groups. This increases the amount of compression in the vertical direction of the substrate 110 when suction is performed by the suction unit, and as a result, contributes to hi > ho. Further, as the processing of the convex portion 2, for example, processing by polishing is considered, but the processing is not limited thereto, and processing may be performed by other methods as long as processing such as Si > So can be performed.
As described above, in example 2, the outer-peripheral-side convex portions 3 included in each of the plurality of groups and the inner-peripheral-side convex portions 4 included in each of the plurality of groups were processed So as to make Si > So. This can improve the machining accuracy and shorten the machining time. Further, distortion can be reduced as in example 1. This makes it possible to provide a chuck that can hold the substrate 110 by suction in an optimum state after performing a process such as pattern formation.
(example 3)
The substrate holding apparatus 101 of example 3 is a substrate holding apparatus further provided with an auxiliary partition wall (second partition wall) 7 as a partition wall different from the partition wall 5 in the chuck 1 of example 1, and a suction port (second suction port) 8 as a suction port different from the suction port 6. That is, in example 3, the first partition wall is formed of the adjacent double-layered partition walls, and the partition wall on the outer side of the double-layered partition wall is referred to as an auxiliary partition wall (second partition wall). Next, a substrate holding apparatus 101 according to embodiment 3 will be described with reference to fig. 6. Fig. 6 is a diagram illustrating the substrate holding device 101 of example 3. Fig. 6A is a plan view of the substrate holding apparatus 101 viewed from the + Z direction. Fig. 6B is a partial sectional view of the substrate holding device 101 of fig. 6A. Since the structure of the substrate holding apparatus 101 of embodiment 3 is the same as that of the substrate holding apparatus 101 of embodiment 1, a description of the overlapping portions will be omitted.
The chuck 1 of example 3 includes a plurality of pin-shaped protrusions 2, partition walls 5, and suction ports 6, as in example 1, and further includes auxiliary partition walls 7 and suction ports 8.
The auxiliary bulkhead 7 is disposed between the bulkhead 5 and the inner peripheral side protrusion 4 disposed at a position adjacent to the inner peripheral side of the bulkhead 5. The auxiliary bulkhead 7 is preferably disposed at a position closer to the inner peripheral side protrusion 4 disposed at a position adjacent to the inner peripheral side of the bulkhead 5 than the center position of the distance L. For example, it is configured to satisfy u < 0.5. Further, u ≈ 1 is arranged as the arrangement position of the partition wall 5, which is the same as example 1.
The height of the auxiliary partition wall 7 is formed to be lower than the height of the inner peripheral side protrusions 4 included in each of the plurality of groups. The height of the inner peripheral side protrusion 4 included in each of the plurality of groups is, for example, an average height. The height of the inner peripheral protrusions 4 may be lower than the height of a specific inner peripheral protrusion 4, for example, the inner peripheral protrusion 4 having the lowest height among the inner peripheral protrusions 4 included in each of the plurality of groups. The height of the auxiliary partition 7 may be about 1 to 2 μm lower than the upper surface of the plurality of projections 2. Even if the vacuum pressure is lowered by about 1 to 2 μm, the vacuum pressure is slightly lowered when the suction unit sucks the space (region) between the back surface of the substrate 110 and the chuck 1 in the gap of about 1 to 2 μm and holds the substrate 110 by suction, which is not problematic. In addition, even if foreign matters such as dust and particles having a diameter less than a difference of about 1 to 2 μm are attached to the auxiliary partition walls 7, the probability that the attached foreign matters come into contact with the back surface of the substrate 110 is very low. Therefore, the height of the auxiliary barrier 7 is formed to be lower by about 1 to 2 μm than the upper surfaces of the plurality of projections 2, which is not problematic.
The suction port 8 has the same function as the suction port 6 of embodiment 1, and is formed between the partition wall 5 and the auxiliary partition wall 7. The suction port 8 is connected to the suction portion through a flow path such as a pipe, similarly to the suction port 6 of example 1. The suction unit in the substrate holding apparatus 101 according to example 3 includes valves (switching valves), not shown, for opening and closing the flow paths for suction in the flow paths connecting the suction ports 6 and 8 and the suction unit. In example 3, the valve disposed between the suction port 6 and the suction portion is a first valve, and the valve disposed between the suction port 8 and the suction portion is a second valve.
In example 3, when the substrate 110 is held by suction by the chuck 1, suction is performed through the suction ports 6 and 8. Next, the suction process of the substrate 110 in example 3 will be described. The suction process is controlled by a computer program executed by a control unit, not shown, of the substrate holding apparatus 101.
First, the control unit (not shown) sends an operation command to the suction unit to start suction (exhaust). The suction is started by the suction unit, and the space between the back surface of the substrate 110 and the chuck 1 is sucked through the suction ports 6 and 8. This causes the area of the substrate 110 inside the partition wall 5 to be a suction area, which generates a larger suction force and enables the substrate with a large warpage to be corrected. In addition, distortion occurs at the time when the warpage of the substrate 110 is corrected and the suction is completed.
Subsequently, the control unit, not shown, controls the second valve to stop the suction through the area of the suction port 8. Thus, the space between the partition wall 5 and the auxiliary partition wall 7 is opened to the atmosphere from the suction port 8, and the sucked region shifts to a region inside the substrate 110 from the auxiliary partition wall 7 as a region passing through the suction port 6, thereby reducing distortion. Various controls in these suction processes may be performed by the control unit 109.
Even if the suction force on the outer peripheral side (outer peripheral portion) of the substrate 110 is stopped or reduced, the probability that the once-corrected substrate 110 returns to the original state is low. Thus, distortion remains small.
As described above, in example 3, as in example 1, the distortion is reduced, and the warpage of the substrate 110 can be reduced. This makes it possible to provide a chuck that can hold the substrate 110 by suction in an optimum state after performing a process such as pattern formation.
In addition, in the substrate 110 having a large warpage in a part thereof, the warpage is not rarely recovered when the suction port 8 is opened to the atmosphere. In this case, depending on the warpage of the substrate 110, a negative pressure of about α × negative 1 atmosphere (α is an integer less than 1) may be applied from the suction portion through the suction port 8. Alternatively, before the space between the back surface of the substrate 110 and the chuck 1 is sucked by the suction unit, the pressure from the suction port 8 is set to a negative pressure of about 1 atmosphere, and the pressure from the suction port 8 is set to a negative pressure of α × negative 1 atmosphere (α is an integer smaller than 1). Therefore, it is not necessary to switch between before and after the correction of the substrate 110, and the warp is not recovered.
For example, the substrate holding apparatus 101 of embodiment 2 may be combined with the substrate holding apparatus 101 of embodiment 3, or the substrate holding apparatus 101 of embodiment 3 may be combined with the substrate holding apparatus 101 of embodiment 2.
In the above embodiments, the convex portions 2 are arranged in a grid pattern at a predetermined distance from the bottom of the chuck 1, but the present invention is not limited thereto. For example, the distance between the convex portions 2 may be arbitrarily set on the inner and outer circumferential sides of the substrate 110. The distance of the convex portion 2 does not need to be a uniform distance, and may be a non-uniform distance.
Further, the chuck 1 in each of the above embodiments employs a vacuum suction method, but is not limited thereto, and for example, an electrostatic chuck method may be employed, and other methods such as a vacuum suction method and an electrostatic chuck method may be used in combination. In these cases, the vacuum pressure P in each example may be replaced with another type of suction force or a combination of applying a vacuum pressure thereto.
The chuck 1 in each of the above embodiments uses a pin type chuck, but is not limited thereto, and may have another shape. For example, a so-called annular chuck may be configured such that concentric annular concave portions as the suction grooves and concentric annular convex portions as the substrate supporting surface are alternately formed. The partition walls are not limited to the partition wall 5 and the auxiliary partition wall 7, and partition walls other than the partition wall 5 and the auxiliary partition wall 7 may be disposed on the chuck 1.
(examples of the method for producing an article)
Next, an example of a method for manufacturing a device using the exposure apparatus 100 of each of the above embodiments will be described. Fig. 7 shows a flow of manufacturing microdevices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin film magnetic heads, micromachines, and the like). The pattern design of the device is performed in step 1 (circuit design).
In step 2 (mask fabrication), a mask (mold, die) having a designed pattern formed thereon is fabricated. On the other hand, in step 3 (wafer fabrication), a wafer (substrate) is fabricated using a material such as silicon or glass. Step 4 (wafer process) is called a pre-process, and actual circuits are formed on the wafer by a photolithography technique using the mask and the wafer prepared as described above.
Step 5 (assembly) is hereinafter referred to as a post-process, and is a process of converting the wafer produced in step 4 into a semiconductor chip, and includes assembly processes (punching, bonding), packaging processes (chip sealing), and the like. In step 6 (inspection), the semiconductor device manufactured in step 5 is subjected to an inspection such as an operation check test and a durability test. After the above steps, the semiconductor device is completed and shipped (step 7).
Fig. 8 shows a detailed flow of the wafer process. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12(CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by evaporation. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a resist is applied on the wafer. In step 16 (exposure), the circuit pattern of the mask is arranged on a plurality of pattern forming regions of the wafer by the projection exposure apparatus and exposure is performed. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after the end of etching is removed. By repeating these steps, a multilayer circuit pattern is formed on the wafer.
As described above, according to the method for manufacturing a device using the chuck 1 of the present embodiment, since the substrate is suppressed from being distorted or warped, the accuracy, yield, and the like of the device are improved, and therefore, a device with high integration, which has been difficult to manufacture conventionally, can be stably manufactured at low cost.
The present invention has been described in detail based on the preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and various modifications can be made based on the gist of the present invention, and these modifications are not excluded from the scope of the present invention.
Further, a computer program that realizes a part or all of the functions of the above-described embodiments of the control in the above-described embodiments may be supplied to the substrate holding apparatus 101, the substrate processing apparatus, and the like via a network or various storage media. The program may be read and executed by a computer (or a CPU, MPU, or the like) in the substrate holding apparatus 101, the substrate processing apparatus, or the like. In this case, the program and the storage medium storing the program constitute the present invention.
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.
This application claims priority from japanese patent application No. 2021-032667, filed on 3/2/2021, which is hereby incorporated by reference in its entirety.
Claims (17)
1. A chuck for holding a substrate by suction, characterized in that,
the chuck includes:
a plurality of projections which abut against the back surface of the substrate held by suction;
an annular partition wall; and
a bottom portion on which the plurality of convex portions and the partition wall are arranged,
the plurality of convex portions are composed of a plurality of groups in which a first convex portion arranged outside the partition wall and a second convex portion arranged inside the partition wall and adjacent to the first convex portion with the partition wall interposed therebetween are formed as one group,
when the height of the first convex portion included in each of the plurality of groups is ho and the height of the second convex portion included in each of the plurality of groups is hi, hi > ho is satisfied.
2. The chuck according to claim 1,
the first convex portion included in each of the plurality of groups is a convex portion disposed on an outermost periphery side among the plurality of convex portions disposed on the bottom portion.
3. The chuck according to claim 1,
the height of the partition is lower than the height of the second convex portion included in each of the plurality of groups.
4. The chuck according to claim 1,
the height of the partition is equal to or less than the height of the second convex portion included in each of the plurality of groups.
5. The chuck according to claim 1,
when the cross-sectional area of the first convex portion included in each of the plurality of groups is So and the cross-sectional area of the second convex portion included in each of the plurality of groups is Si,
si > So.
6. The chuck according to claim 1,
the partition is disposed at a position closer to the first convex portion included in each of the plurality of groups than the second convex portion included in each of the plurality of groups.
7. The chuck according to claim 1,
the partition walls are formed of adjacent double-layered partition walls.
8. The chuck according to claim 7,
the height of the outer partition wall in the double-layered partition wall is lower than the height of the second convex portion included in each of the plurality of groups.
9. The chuck according to claim 4,
the bottom portion is provided with a first suction port for sucking the inner peripheral side of the partition wall.
10. The chuck according to claim 7,
the bottom portion is provided with a second suction port for sucking a region between the double-layer partition walls.
11. The chuck according to claim 1,
the partition wall has a diameter smaller than that of the substrate.
12. The chuck according to claim 1,
the chuck has a third convex portion which is a convex portion different from the plurality of convex portions.
13. A substrate holding apparatus is characterized in that,
the substrate holding apparatus has the chuck according to claim 1, and the substrate is suction-held by sucking a region of an inner periphery of the partition wall using the chuck.
14. The substrate holding apparatus according to claim 13,
the substrate holding device includes: a valve for opening and closing a flow path for sucking a region on the inner periphery of the partition wall; and a control unit for controlling the valve.
15. The substrate holding apparatus according to claim 13,
when the height of the first convex portion included in each of the plurality of groups is ho, the height of the second convex portion included in each of the plurality of groups is hi, the young's modulus of the substrate is E, the thickness of the substrate is h, the suction pressure to the substrate is Pv, and the distance between the first convex portion and the second convex portion included in each of the plurality of groups is L,
satisfies hi-ho < (PvL) 4 )/(Eh 3 )。
16. A substrate processing apparatus is characterized in that,
the substrate processing apparatus includes a pattern forming unit that forms a pattern on the substrate sucked and held by the substrate holding apparatus according to claim 13.
17. A method of manufacturing an article, characterized in that,
the method of manufacturing the article includes:
a pattern forming step of forming a pattern on the substrate by processing the substrate using the substrate processing apparatus according to claim 16;
a processing step of processing the substrate after the pattern is formed in the pattern forming step; and
and a step of manufacturing an article from the substrate processed in the processing step.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021032667A JP2022133783A (en) | 2021-03-02 | 2021-03-02 | Chuck, substrate holding device, substrate processing apparatus, and method for manufacturing article |
| JP2021-032667 | 2021-03-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114999987A true CN114999987A (en) | 2022-09-02 |
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ID=83023450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210197923.5A Pending CN114999987A (en) | 2021-03-02 | 2022-03-02 | Chuck, substrate holding device, substrate processing device, and method for manufacturing article |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2022133783A (en) |
| KR (1) | KR20220124089A (en) |
| CN (1) | CN114999987A (en) |
| TW (1) | TW202236496A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210320027A1 (en) * | 2020-04-09 | 2021-10-14 | Applied Materials, Inc. | Systems and methods for substrate support temperature control |
-
2021
- 2021-03-02 JP JP2021032667A patent/JP2022133783A/en active Pending
-
2022
- 2022-02-10 TW TW111104893A patent/TW202236496A/en unknown
- 2022-02-21 KR KR1020220021882A patent/KR20220124089A/en unknown
- 2022-03-02 CN CN202210197923.5A patent/CN114999987A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210320027A1 (en) * | 2020-04-09 | 2021-10-14 | Applied Materials, Inc. | Systems and methods for substrate support temperature control |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202236496A (en) | 2022-09-16 |
| JP2022133783A (en) | 2022-09-14 |
| KR20220124089A (en) | 2022-09-13 |
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