CN114999753A - Manganese/lanthanum/iron modified tungsten oxide based negative temperature coefficient thermistor material - Google Patents
Manganese/lanthanum/iron modified tungsten oxide based negative temperature coefficient thermistor material Download PDFInfo
- Publication number
- CN114999753A CN114999753A CN202210739541.0A CN202210739541A CN114999753A CN 114999753 A CN114999753 A CN 114999753A CN 202210739541 A CN202210739541 A CN 202210739541A CN 114999753 A CN114999753 A CN 114999753A
- Authority
- CN
- China
- Prior art keywords
- temperature
- ntc
- thermistor
- temperature coefficient
- ntc thermistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 48
- 229910052748 manganese Inorganic materials 0.000 title claims abstract description 14
- 229910052742 iron Inorganic materials 0.000 title claims abstract description 13
- 229910052746 lanthanum Inorganic materials 0.000 title claims abstract description 12
- -1 iron modified tungsten oxide Chemical class 0.000 title claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 title description 20
- 239000011572 manganese Substances 0.000 title description 14
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 title description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 title description 3
- 239000002994 raw material Substances 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000009472 formulation Methods 0.000 claims 1
- 229910017053 inorganic salt Inorganic materials 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 19
- 238000005245 sintering Methods 0.000 abstract description 16
- 238000001354 calcination Methods 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 8
- 238000002156 mixing Methods 0.000 abstract description 7
- 238000009529 body temperature measurement Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910018553 Ni—O Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005469 granulation Methods 0.000 description 3
- 230000003179 granulation Effects 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 description 3
- 229910002480 Cu-O Inorganic materials 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910020647 Co-O Inorganic materials 0.000 description 1
- 229910020704 Co—O Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000004643 material aging Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
Abstract
The present invention provides a Negative Temperature Coefficient (NTC) thermistor material having high temperature sensitivity. The NTC thermistor is prepared from oxides with chemical compositions containing four metal elements of W, Mn, La and Fe by a ceramic preparation process of raw material mixing, calcining, granulating, forming and sintering. The electrical property of the NTC thermistor material can meet the following parameter requirements: resistivity at room temperature ρ 25 7.44-20.66 k Ω · cm, material constant B 25/85 4123-4587K, temperature coefficient of resistance TCR 25 -4.64 to-5.17%/K. The NTC thermal sensitive ceramic resistor related by the invention has wide raw material sources, and the room temperature resistivity of the thermal sensitive ceramic resistor element and the material constant and the resistance temperature coefficient with high temperature sensitivity are adjusted by adjusting the contents of Mn, La and Fe elements. The NTC thermistor material is suitable for NTC thermistor application in the fields of temperature measurement, temperature control and the like.
Description
Technical Field
The invention relates to a thermistor material with Negative Temperature Coefficient (NTC) effect, which is a temperature sensitive element suitable for the fields of temperature measurement, temperature control, surge current suppression, line compensation, infrared near-infrared detection and the like.
Background
The normal temperature type NTC thermal sensitive ceramic resistor is a semiconductor thermal sensitive material which is most widely applied, the working environment temperature range is-60 ℃ to 300 ℃, the NTC thermal sensitive ceramic resistor is generally composed of two or more transition metal oxides, and the NTC thermal sensitive resistor mainly comprises a spinel structure system composed of a Mn-Cu-O, Mn-Co-O binary system, a Mn-Co-Ni-O, Mn-Cu-Ni-O ternary system, a Mn-Co-Ni-Cu-O quaternary system and the like.
The room temperature resistivity of the thermal sensitive ceramic is in the range of 10 omega cm-10M omega cm, the material constant B value is changed in the range of 2000-5000K, and the resistance temperature coefficient is in the range of-1%/K-6%/K. For example, the NTC heat-sensitive material which is disclosed by Chinese invention patent CN108033774B and takes nitrates of Ni and Mn as raw materials and adopts a sol-gel method to synthesize the NTC heat-sensitive material with the grain diameter less than 500nm, the resistivity at room temperature is about 3100 omega cm, and the material constant is more than 4000K; the Chinese invention patent CN109734423A relates to a Cu and Ca Co-doped modified Mn-Co-Ni-O system negative temperature coefficient film thermosensitive material, the room temperature resistance value ranges from 82K omega to 180K omega, the thermosensitive constant is about 3400K, and the aging rate can be reduced from 47.6 percent to 21.1 percent by doping calcium with different contents; the invention patent US8547198B2 discloses a Mn, Ni and Fe-containing semiconductor ceramic for NTC thermistors, which has good controllability and aging performance. The traditional NTC thermistors contain two or more transition metal oxides, are simple in manufacturing process and low in cost, but have the defects that low-melting-point components volatilize in the sintering process, products in the same batch are poor in consistency, and structural relaxation is easy to occur in the working process to cause material aging.
The NTC thermistor element has key functions of temperature measurement, temperature compensation and control, surge current suppression and the like, and the electronic element is widely applied to the fields of automobiles, electronics, communication, power transmission and transformation engineering, air conditioner fan heater engineering, low-energy-consumption safety household appliances, demagnetization, overcurrent protection, overheat protection, near infrared detection, aerospace and the like. With the stricter requirements on the stability and the accuracy of the NTC thermistor in the fields of electronic information, household appliances, new energy automobiles, aerospace and the like, the development of the NTC thermistor with high accuracy and strong reliability has very important practical significance.
WO 3 Is a typical transition metal oxide, and can adjust WO in a large range through doping modification 3 Room temperature resistivity of thermistor base (university of Chinese university, 1999 (05): 104-. In the past against WO 3 Mainly focuses on the fields of pigment, photocatalysis, gas sensors and electrochromism, for example, the Chinese patent CN105642274B relates to WO 3 Used for photocatalytic degradation of organic pollutants; the Chinese invention patent CN104458827B designs a hollow-basedSpherical WO 3 NO of 2 A gas sensor; chinese invention patent CN104178731A relates to an electrochromic WO 3 And (3) controllable preparation of the film. Although some documents or patents have been reported about tungsten element as NTC thermistor material, for example, Chinese patent CN107129284A discloses a WO 3 4-12% of high-performance multi-temperature-zone thermistor material with complex components and a preparation method thereof; a formula disclosed by Chinese patent CN103011811B is CaWCeTi y O 2y-x+6 And is covered with WO 3 The heat-sensitive material is a tungsten source, and the molar ratio of Ca, Ce, Ti and W in the formula is 1: x: y: 1, wherein x is more than or equal to 0.2 and less than or equal to 0.5, and y is more than or equal to 1 and less than or equal to 3. However, WO has not been found yet 3 A material as a main component is reported for NTC thermistor applications. By adding small amounts of metal oxides to the WO 3 The base ceramic realizes excellent NTC characteristic and meets the application requirement of the NTC thermal sensitive ceramic resistor. Thus, WO was developed 3 The NTC thermistor material has innovativeness and practical application value.
Disclosure of Invention
The invention provides a WO 3 A NTC-based thermistor material. The NTC thermistor material comprises Mn x La y Fe z WO 3+δ Wherein x is more than or equal to 0.001 and less than or equal to 0.1, y is more than or equal to 0.001 and less than or equal to 0.1, z is more than or equal to 0.001 and less than or equal to 0.1, and delta is the number of oxygen ions which is changed along with the doping amount of Mn, La and Fe elements. The formula of the NTC thermistor contains W, Mn, La and Fe elements, and the raw materials can be simple substances, oxides, inorganic salts or organic salt compounds containing the elements.
The invention uses WO 3 The thermistor material system with perfect NTC effect and high temperature sensitivity is obtained by doping a small amount of Mn, La and Fe elements as main components, and the thermistor material system is simple in material components, rich in raw materials, non-toxic, environment-friendly, stable in performance and high in reliability
In the material composition system, the content of Mn, La and Fe doped elements can be changed to adjust the room temperature resistivity of the thermistor element and the material constant for showing the temperature sensitive characteristic. The Mn, La and Fe doping elements have a semiconducting effect and all have an acceptor doping effect. The element lanthanum is used for adjusting the room temperature resistivity of the thermistor element; the element manganese can adjust the room temperature resistivity and the material constant of the thermistor element; the element iron can reduce the sintering temperature and improve the sintering property of the material.
The electrical property of the NTC thermistor material can meet the following parameter requirements: resistivity at room temperature ρ 25 7.44-20.66 k Ω · cm, material constant B 25/85 4123-4587K, temperature coefficient of resistance TCR 25 ＝-4.64～-5.17％/K。
The NTC thermistor material has the characteristics and advantages that: the material composition is simple; the sintering temperature is low; the NTC thermistor is suitable for production of ceramic, thick film, thin film and multilayer film NTC thermistor elements; the room temperature resistance value of the thermistor element can be adjusted in a large range by adjusting the content of the element, and higher material constant and temperature coefficient are kept.
The present invention is further illustrated by the following examples. In the embodiment of the NTC thermistor ceramic, tungsten trioxide, lanthanum trioxide, ferric oxide and manganese dioxide are used as raw materials and are prepared by grinding, calcining, granulating, molding, sintering and electrode coating and sintering processes. The following examples are merely examples consistent with the technical disclosure of the present invention, and do not illustrate that the present invention is limited to the following examples. The invention is characterized in that the NTC thermistor material has a component formula, and the raw materials, the process method, the preparation and the production steps can be correspondingly adjusted according to actual production conditions, so that the flexibility is high. For example, the raw material may be selected from simple substances, oxides, inorganic salts or organic salts containing these elements; the synthesis method can adopt a solid state reaction method, a coprecipitation method, a sol-gel method, a vapor deposition method or other preparation methods of ceramic materials; the NTC heat-sensitive ceramic element, the heat-sensitive thin film element and the heat-sensitive thick film element can be prepared by the ingredient formula designed by the invention.
Drawings
FIG. 1 is a characteristic diagram of the change of resistivity with temperature (resistivity-inverse temperature) of the thermosensitive ceramic resistance material in the example. The figure illustrates that all materials exhibit typical NTC characteristics.
Detailed Description
Example 1
An embodiment of the present invention provides a WO 3 The preparation method of the NTC thermistor material comprises the following steps:
step 1: is Mn according to chemical composition 0.03 La 0.03 Fe 0.09 WO 3.24 Mixing materials with MnO as raw material 2 、La 2 O 3 、Fe 2 O 3 、WO 3 5.7963g of WO are weighed out using an analytical balance 3 0.1222g La 2 O 3 0.0652g of MnO 2 0.1797g of Fe 2 O 3 ；
Step 2: putting the powder weighed in the step 1 into an agate mortar for hand milling for 30min, uniformly mixing the raw materials, and then drying at 120 ℃;
and 3, step 3: calcining the dry powder obtained in the step 2 in an air environment, wherein the heating rate is 5 ℃/min, the calcining temperature is 700 ℃, and the temperature is kept for 300 min;
and 4, step 4: adding PVA aqueous solution into the powder calcined in the step 3 as a binder for granulation, and pressing into a cylindrical blank with the diameter of 12mm and the thickness of 2-3 mm;
and 5: and (4) sintering the blank obtained in the step (4), wherein the temperature is controlled as follows: firstly, heating to 800 ℃, and keeping the temperature for 60 min; then, the temperature is raised to 980 ℃ and the temperature is kept for 90 min. The heating rate is 5 ℃/min, and the obtained product is cooled along with the furnace after sintering is finished to obtain WO 3 A base NTC thermal sensitive ceramic sheet;
and 6: subjecting the WO obtained in step 5 3 Grinding the surface layers of two sides of the NTC thermosensitive ceramic wafer by using abrasive paper, flattening the two sides, coating silver paste, sintering and curing at 600 ℃ to manufacture an ohmic electrode;
and 7: and (4) measuring the resistance-temperature characteristic of the sample obtained in the step (6) to obtain the room temperature resistance and the data of the resistance of the thermistor element along with the temperature change.
The resistance-temperature characteristic of the prepared material with the logarithm of the resistivity and the reciprocal of the temperature is shown in figure 1, the room-temperature resistivity is 20655 omega-cm, the material constant B value is 4123K, and the temperature coefficient is-4.64%/K.
Example 2
An embodiment of the present invention provides a WO 3 The preparation method of the NTC thermistor material comprises the following steps:
step 1: is Mn according to chemical composition 0.05 La 0.03 Fe 0.09 WO 3.28 Mixing materials with MnO as raw material 2 、La 2 O 3 、Fe 2 O 3 、WO 3 5.7963g of WO are weighed out using an analytical balance 3 0.1222g La 2 O 3 0.1087g of MnO 2 0.1797g of Fe 2 O 3 ；
Step 2: putting the powder weighed in the step 1 into an agate mortar for hand milling for 30min, uniformly mixing the raw materials, and then drying at 120 ℃;
and step 3: calcining the dry powder obtained in the step 2 in an air environment, wherein the heating rate is 5 ℃/min, the calcining temperature is 700 ℃, and the temperature is kept for 300 min;
and 4, step 4: adding PVA aqueous solution into the powder calcined in the step 3 as a binder for granulation, and pressing into a cylindrical blank with the diameter of 12mm and the thickness of 2-3 mm;
and 5: and (4) sintering the blank obtained in the step (4), wherein the temperature is controlled as follows: firstly, heating to 800 ℃, and keeping the temperature for 60 min; then, the temperature is raised to 970 ℃, and the temperature is kept for 90 min. The heating rate is 5 ℃/min, and the obtained product is cooled along with the furnace after sintering is finished to obtain WO 3 A base NTC thermal sensitive ceramic plate;
step 6: subjecting the WO obtained in step 5 3 Grinding the surface layers of two sides of the NTC thermosensitive ceramic wafer by using abrasive paper, flattening the two sides, coating silver paste, sintering and curing at 600 ℃ to manufacture an ohmic electrode;
and 7: and (4) measuring the resistance-temperature characteristic of the sample obtained in the step (6) to obtain the data of the room-temperature resistance and the resistance variation along with the temperature of the thermistor element.
The resistivity logarithm of the prepared material-the resistance-temperature characteristic of the reciprocal temperature are shown in figure 1, the room temperature resistivity is 14344 omega cm, the material constant B value is 4587K, and the temperature coefficient is-5.17%/K.
Example 3
An embodiment of the present invention provides a WO 3 The preparation method of the NTC thermistor material comprises the following steps:
step 1: is Mn according to chemical composition 0.07 La 0.03 Fe 0.09 WO 3.32 Mixing materials with MnO as raw material 2 、La 2 O 3 、Fe 2 O 3 、WO 3 5.7963g of WO are weighed out using an analytical balance 3 0.1222g La 2 O 3 0.1521g of MnO 2 0.1797g of Fe 2 O 3 ；
And 2, step: putting the powder weighed in the step 1 into an agate mortar for hand milling for 30min, uniformly mixing the raw materials, and then drying at 120 ℃;
and step 3: calcining the dry powder obtained in the step 2 in an air environment, wherein the heating rate is 5 ℃/min, the calcining temperature is 700 ℃, and the temperature is kept for 300 min;
and 4, step 4: adding PVA aqueous solution into the powder calcined in the step 3 as a binder for granulation, and pressing into a cylindrical blank with the diameter of 12mm and the thickness of 2-3 mm;
and 5: and (4) sintering the blank obtained in the step (4), wherein the temperature is controlled as follows: firstly, heating to 800 ℃, and keeping the temperature for 60 min; then, the temperature is raised to 970 ℃, and the temperature is kept for 90 min. The heating rate is 5 ℃/min, and the obtained product is cooled along with the furnace after sintering is finished to obtain WO 3 A base NTC thermal sensitive ceramic sheet;
and 6: subjecting the WO obtained in step 5 3 Grinding the surface layers of two sides of the NTC thermosensitive ceramic wafer by using abrasive paper, flattening the two sides, coating silver paste, sintering and curing at 600 ℃ to manufacture an ohmic electrode;
and 7: and (4) measuring the resistance-temperature characteristic of the sample obtained in the step (6) to obtain the data of the room-temperature resistance and the resistance variation along with the temperature of the thermistor element.
The resistivity logarithm of the prepared material-the resistance-temperature characteristic of the reciprocal temperature are shown in figure 1, the room temperature resistivity is 7440 omega cm, the material constant B value is 4520K, and the temperature coefficient is-5.09%/K.
Claims (2)
1. A negative-temp-coefficient thermistor material is prepared from Mn x La y Fe z WO 3+δ Wherein x is more than or equal to 0.001 and less than or equal to 0.1, y is more than or equal to 0.001 and less than or equal to 0.1, z is more than or equal to 0.001 and less than or equal to 0.1, and delta is the number of oxygen ions which is changed along with the doping amount of Mn, La and Fe elements.
2. The NTC thermistor material according to claim 1, wherein the formulation for preparing the NTC thermistor contains W, Mn, La, and Fe, and the raw material may be simple substance, oxide, inorganic salt, or organic salt compound containing these elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210739541.0A CN114999753A (en) | 2022-06-28 | 2022-06-28 | Manganese/lanthanum/iron modified tungsten oxide based negative temperature coefficient thermistor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210739541.0A CN114999753A (en) | 2022-06-28 | 2022-06-28 | Manganese/lanthanum/iron modified tungsten oxide based negative temperature coefficient thermistor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114999753A true CN114999753A (en) | 2022-09-02 |
Family
ID=83036558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210739541.0A Pending CN114999753A (en) | 2022-06-28 | 2022-06-28 | Manganese/lanthanum/iron modified tungsten oxide based negative temperature coefficient thermistor material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114999753A (en) |
-
2022
- 2022-06-28 CN CN202210739541.0A patent/CN114999753A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107056279B (en) | Single donor doping positive temperature coefficient thermal sensitive ceramic and preparation method thereof | |
| CN105967656B (en) | Novel NTC thermistor material based on nickel oxide | |
| US10622124B2 (en) | High temperature negative temperature coefficient thermistor material and preparation method thereof | |
| CN105967655B (en) | Lithium iron doped nickel oxide negative temperature coefficient thermistor material | |
| CN110903087B (en) | Low-B high-resistance wide-temperature-zone high-temperature thermistor material and preparation method and application thereof | |
| CN108546114B (en) | Wide-temperature-zone negative temperature coefficient thermal sensitive ceramic material and preparation method thereof | |
| Yang et al. | Influence of B 3+-and Na+-ions on electrical property and temperature sensitivity of NiO-based ceramics | |
| CN105967677A (en) | Novel zinc-nickel oxide NTC (negative temperature coefficient) thermosensitive resistor material | |
| CN108329015B (en) | Doped modified nickel oxide-based NTC (negative temperature coefficient) thermistor material and preparation method thereof | |
| CN104987059B (en) | A kind of new NTC Thermistor Materials based on copper oxide | |
| CN112876238B (en) | Stannate system negative temperature coefficient thermistor material and preparation method thereof | |
| Fang et al. | Aging of nickel manganite NTC ceramics | |
| CN112694325A (en) | PTC thermistor ceramic material and preparation method and application thereof | |
| CN114999753A (en) | Manganese/lanthanum/iron modified tungsten oxide based negative temperature coefficient thermistor material | |
| CN104310984A (en) | Thermal sensitive ceramic material and preparation method thereof | |
| Qu et al. | Microstructures and electrical properties of Mn/Co/Ni-doped BaBiO 3 perovskite-type NTC ceramic systems | |
| CN101412625A (en) | High-curie point lead-free PTC thermal sensitive ceramic resistor material | |
| CN111533552B (en) | TiO 22NTC-based thermistor material and preparation method thereof | |
| CN110642603A (en) | Novel high-precision NTC (negative temperature coefficient) thermistor material based on nickel oxide | |
| CN112759391A (en) | Ytterbium-doped NTC (negative temperature coefficient) type high-temperature thermistor ceramic material as well as preparation method and application thereof | |
| CN108863350B (en) | Bismuth titanate-based perovskite phase thermal sensitive ceramic composite material and preparation method and application thereof | |
| CN112939597A (en) | PTCR thermal sensitive ceramic material and preparation method thereof | |
| CN101792316B (en) | High-Curie-point lead-free PTCR (Positive Temperature Coefficient of Resistance) thermo-sensitive ceramic material | |
| CN115043652A (en) | Negative temperature coefficient thermistor material suitable for medium and low temperature sintering | |
| CN114956789B (en) | Linear wide-temperature-area high-temperature-sensitive resistor material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination |