CN108329015B - Doped modified nickel oxide-based NTC (negative temperature coefficient) thermistor material and preparation method thereof - Google Patents
Doped modified nickel oxide-based NTC (negative temperature coefficient) thermistor material and preparation method thereof Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 80
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical class [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 title abstract description 4
- 238000002360 preparation method Methods 0.000 title description 17
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 238000005245 sintering Methods 0.000 claims abstract description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 27
- 239000002994 raw material Substances 0.000 claims description 22
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 11
- 150000003839 salts Chemical class 0.000 claims description 8
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 7
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 claims description 7
- 238000005303 weighing Methods 0.000 claims description 7
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 239000012153 distilled water Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 238000001354 calcination Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 238000003760 magnetic stirring Methods 0.000 claims description 2
- 239000005416 organic matter Substances 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052731 fluorine Inorganic materials 0.000 abstract description 7
- 239000011737 fluorine Substances 0.000 abstract description 7
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 5
- 238000005259 measurement Methods 0.000 abstract description 5
- 238000009529 body temperature measurement Methods 0.000 abstract description 3
- 229910000480 nickel oxide Inorganic materials 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 239000007858 starting material Substances 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052596 spinel Inorganic materials 0.000 description 4
- 239000011029 spinel Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000001308 synthesis method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KFDQGLPGKXUTMZ-UHFFFAOYSA-N [Mn].[Co].[Ni] Chemical compound [Mn].[Co].[Ni] KFDQGLPGKXUTMZ-UHFFFAOYSA-N 0.000 description 2
- 238000000975 co-precipitation Methods 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011573 trace mineral Substances 0.000 description 2
- 235000013619 trace mineral Nutrition 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910017135 Fe—O Inorganic materials 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910002328 LaMnO3 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910015382 Ni0.98Al0.02 Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910009567 YMnO3 Inorganic materials 0.000 description 1
- FIERVQVZJPYIIV-UHFFFAOYSA-N [Mn].[Co].[Ni].[Fe].[Cu] Chemical class [Mn].[Co].[Ni].[Fe].[Cu] FIERVQVZJPYIIV-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 description 1
- 229910001981 cobalt nitrate Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229910000360 iron(III) sulfate Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
The invention relates to a semiconductor ceramic material, in particular to a semiconductor ceramic material which is suitable for preparing a thermistor material with negative temperature coefficient of resistance (NTC). The NTC thermistor material provided by the invention is mainly composed of nickel oxide, the room temperature resistivity of the thermistor element can be adjusted by adjusting the content of trace semiconductive doping element fluorine, and the room temperature resistivity and the constant value of the NTC material can be further adjusted by adding trace modified element aluminum. The NTC thermistor material is suitable for sintering and molding of thermosensitive ceramic elements, thin-film thermosensitive elements and low-temperature co-fired laminated thermosensitive elements. The thermistor material has the characteristics of good stability, good consistency and good repeatability, has the characteristics of controllable electrical characteristics such as resistance value, material constant, resistance temperature coefficient and the like, and is suitable for the fields of temperature measurement, temperature control and line compensation, protection of circuits and electronic elements, and instruments and application of flow velocity, flow and ray measurement.
Description
Technical Field
The present invention relates to a Negative Temperature Coefficient (NTC) thermistor material for manufacturing a thermistor element having an NTC effect. The temperature control device is suitable for the fields of temperature measurement, temperature control, line compensation, protection of circuits and electronic elements, flow velocity, flow and ray measurement instruments and application.
Background
The thermistor is a device made by using the property of material resistivity varying with temperature, and includes a Positive Temperature Coefficient (PTC) thermistor in which the resistivity increases with increasing temperature or a Negative Temperature Coefficient (NTC) thermistor element in which the resistivity decreases with increasing temperature. NTC thermistor elements and devices have been widely used in temperature measurement, control, temperature compensation, surge current suppression, protection of circuits and electronic elements, and related instruments and applications for flow rate, flow and ray measurement. NTC thermistors and NTC temperature sensors have a large market demand and are widely used in the fields of communications, medical treatment, computers, automobiles, electronics, home appliances, and the like. With the rapid development of the global and domestic electronic information industry, the great demand and development of the NTC thermistor and the NTC temperature sensor are further driven.
In the normal temperature NTC thermistor, transition metals of manganese and nickel are mainly adoptedAnd NTC thermistor elements of spinel structure made of oxides of cobalt, iron and copper, which have been widely researched and applied. For example, the NTC thermistor material disclosed in chinese patent CN1332405C is synthesized by a liquid-phase coprecipitation method using nitrates of manganese, nickel, magnesium, and aluminum as raw materials; the Co-Mn-Fe-O NTC thermal sensitive ceramic material is prepared by taking cobalt nitrate, manganese nitrate and ferric sulfate as raw materials and is disclosed in Chinese invention patent CN 100395849C; CoO-Co published in Chinese invention patent CN1006667B2O3-Fe2O3A ceramic-based NTC thermosensitive material; us patent 6861622 discloses a manganese-nickel-cobalt-iron-copper series NTC heat sensitive material as described in the patent. The common feature of these NTC thermistor materials is that they contain oxides of at least two transition metals and are composed of a spinel-type cubic crystal structure as a main crystal phase.
In the NTC thermistor material with spinel structure made of transition metal oxides of manganese, nickel, cobalt, iron and copper, because the volatilization temperature of the transition metal oxides is low, the volatilization of raw material components is easy to generate in the preparation and sintering process of the NTC thermistor element, so that the final components of the product, the consistency of the product and the repeatability of different production batches are difficult to control. The NTC ceramic with the spinel structure has large room temperature resistivity, and the resistance value is not easy to regulate and control; reducing the resistivity of the material often results in a reduction in the temperature coefficient, which affects the NTC properties of the thermistor. Meanwhile, in the manganese-nickel-cobalt compound with a spinel structure, cations in the tetrahedron and octahedron of the manganese-nickel-cobalt compound are slowly redistributed along with time within the temperature range of 200-400 ℃ to cause structure relaxation. The relaxation phenomenon causes the instability of the electrical property of the NTC ceramic material, easily causes the aging of the material, and influences the property and the service life of the material.
In recent years, in order to develop a novel oxide-based NTC thermistor material, scientists have also developed some new material systems, such as hexagonal BaTiO3The system (Chinese patent ZL 200910043274.8; Chinese patent ZL 200910303525.1) and rutile type SnO2Ceramics (electronic components and Materials, 2009(6): 56-59; Journal of Materials Science-Materials in EleFirst, LaCoO was found in ctronics, 2014,25(12):5552-3The perovskite-based Ceramic has excellent NTC characteristics (Journal of the European Ceramic Society,2000,20(14-15):2367-3、BaBiO3、SrTiO3、YMnO3And LaMnO3NTC thermal sensitive ceramics (Journal of the American Ceramic Society,1997,80(8): 2153-. With the increasing requirement of industries such as air conditioners, refrigerators, microwave devices, automobiles and the like on the stability of NTC thermistors, it is very important to improve the existing component system or develop a novel component system.
In view of the above situation, the present invention adopts a material modified by doping trace elements with nickel oxide as a main component to obtain a thermistor material system with a good NTC effect, and the room temperature resistivity of the thermistor element and the temperature constant of the material can be adjusted by changing the trace elements.
Disclosure of Invention
It is an object of the present invention to provide an NTC thermistor material system capable of producing NTC thermistor materials having a negative temperature coefficient of resistance effect. The thermistor material can adjust the room temperature resistivity of the thermistor element and the temperature constant of the material by changing the trace doping element.
The NTC thermistor material comprises the following components: ni1-xAlxO1-yFyWherein x is 0.0001 to 0.1; y is 0.0001 to 0.1.
The key component of the NTC material of the invention is Ni1-xAlxO1-yFyThe components of the formula contain nickel, aluminum, oxygen and fluorine elements, the raw materials Ni and Al for preparing the thermistor can be simple substances, oxides, inorganic salts or organic salts containing the elements, and the raw material of the element F can be acid containing F and fluorineCompound, organic matter containing F. The semiconductive element fluorine is used for adjusting the room temperature resistivity of the thermistor element, the element aluminum is used for adjusting the room temperature resistivity of the thermistor element and a material constant and a temperature coefficient which show the thermosensitive property, and meanwhile, the sintering property of the thermistor can be enhanced due to the introduction of the aluminum.
The preparation method of the embodiment of the invention can obtain the phase composition of high-purity single phase, and the prepared NTC thermistor element has stable and high performance and reliability.
The main key point of the invention is the ingredient formula of the thermistor material, and the synthesis method and the production process can be correspondingly adjusted according to requirements in the practical application process, so that the invention has high flexibility. For example, the raw material may be selected from compounds containing simple substances, oxides, inorganic salts, or organic salts of these elements; the synthesis method can be realized by adopting a solid-state reaction method, a sol-gel method, a coprecipitation method, a vapor deposition method or other synthesis methods of ceramic materials.
The invention relates to a method for detecting the characteristics of a thermistor material, which adopts coated silver paste as an electrode to measure the room temperature resistance and the resistance-temperature characteristic of an element. Other electrode materials such as aluminum electrodes, In-Ga alloy electrodes or nickel electrode materials can be selected for practical production.
The NTC thermistor material has the following characteristics and advantages: the material has simple components, rich raw materials and environmental protection; the sintering temperature is low in the preparation process, and the preparation method is suitable for production of NTC thermistor elements such as ceramic elements and films; using anion fluorine as a semiconductive doping element; fourthly, the room temperature resistance value of the thermistor element can be adjusted in a large range by adjusting the content of the semiconductive doping element fluorine; the material constant and temperature coefficient of the thermosensitive element can be adjusted in a large range by adjusting the content of aluminum in the composition.
The electrical property of the NTC thermistor material can meet the following parameter requirements: resistivity at room temperature ρ25=1Ω·cm-1~1MΩ·cm-1The material constant B is 1000-6000K.
The invention is further illustrated by the following examples. The following embodiments are merely examples consistent with the technical contents of the present invention, and do not illustrate that the present invention is limited to the contents described in the following examples. The invention is characterized by the ingredient formula, the raw materials, the process method and the steps can be correspondingly adjusted according to the actual production conditions, and the flexibility is high.
Drawings
FIG. 1 is a resistance-temperature characteristic curve of different aluminum contents in the NTC thermal sensitive ceramic resistance material in the embodiment. The figure illustrates that all materials exhibit typical NTC properties and that the trace introduction of aluminium can significantly alter the resistivity of the material and the NTC material constant.
FIG. 2 is a graph of the room temperature resistivity of the NTC thermal sensitive ceramic resistance material and the variation of the material constant with the aluminum content in the embodiment. The trace introduction of Al can obviously change the resistivity of the material and the NTC material constant.
FIG. 3 is a thermistor material (Ni) prepared in example 60.97Al0.03O0.95F0.05) Resistance-temperature dependence of repeated measurements from room temperature to 300 ℃. The material has good temperature cycle stability.
FIG. 4 shows the room temperature resistivity with fluorine content (Ni) in the NTC thermistor material of the present invention0.98Al0.01O1-yFy) A curve of variation. The figure shows that the room temperature resistivity of the NTC thermistor material can be effectively adjusted by introducing the fluorine in a trace amount.
Detailed Description
Example 1
This example shows the formula Ni1-xAlxO1-yFyAnd (3) preparing materials, wherein x is 0 and y is 0.04. The starting material is selected from basic nickel carbonate NiCo3·2Ni(OH)2·4H2O, ammonium fluoride NH4F. The material preparation was carried out according to the following experimental process steps:
(1) the initial raw material is mixed with NiO0.96F0.04Proportioning and weighing NiCO3·2Ni(OH)2·4H2O 62.7050g、NH4F 0.7408g;
(2) Respectively dissolving the raw materials weighed in the previous step: NiCo3·2Ni(OH)2·4H2Dissolving O in dilute nitric acid, and then dropwise adding ammonia water to adjust the pH value to about 8; NH (NH)4Dissolving F in distilled water;
(3) mixing the two solutions prepared in the previous step together, stirring and uniformly mixing by using a magnetic stirring heater, and heating and drying;
(4) calcining the powder prepared in the last step at 850 ℃, and keeping the temperature for 5 hours;
(5) mixing the powder prepared in the last step with 5-8 ml of polyvinyl alcohol aqueous solution per 100 g of the powder, granulating and pressing into a blank; the blank body is in a disc shape, the diameter of the disc is 15 mm, and the thickness of the disc is 3.5-4.0 mm;
(6) sintering the blank obtained in the last step, wherein the sintering temperature is 1300 ℃, the heat preservation is carried out for 1 hour, and the heating and cooling rates are both 5 ℃ per minute, so as to obtain the NTC heat-sensitive ceramic chip;
(7) grinding two surfaces of the NTC thermal sensitive ceramic chip prepared in the last step, coating silver paste, and curing at 600 ℃ to prepare an electrode;
(8) and (4) carrying out resistance-temperature characteristic measurement on the NTC thermistor element prepared in the last step.
The properties of the prepared material are shown in table 1, fig. 1 and fig. 2.
Example 2
This example shows the formula Ni1-xAlxO1-yFyAnd (3) preparing materials, wherein x is 0.003 and y is 0.04. The starting material is selected from basic nickel carbonate NiCo3·2Ni(OH)2·4H2O, ammonium fluoride NH4F. Aluminium isopropoxide C9H21AlO3. The material preparation was carried out according to the following experimental process steps:
(1) mixing the initial raw material with Ni0.997Al0.003O0.96F0.04Preparing materials according to a formula, and weighing NiCO3·2Ni(OH)2·4H2O 62.5169g、NH4F 0.7408g、C9H21AlO3 0.3064g;
(2) Respectively dissolving the raw materials weighed in the previous step, wherein NiCO is3·2Ni(OH)2·4H2Dissolving O in dilute nitric acid, adding ammonia water to regulate pH value to about 8, and adding NH4F in distilled water, C9H21AlO3Dissolving in ethanol;
(3) the preparation process was the same as in steps (3) to (8) of example 1
The properties of the prepared material are shown in table 1, fig. 1 and fig. 2.
Example 3
This example is represented by the formula Ni1-xAlxO1-yFyAnd (3) preparing materials, wherein x is 0.005 and y is 0.04. The starting material is selected from basic nickel carbonate NiCo3·2Ni(OH)2·4H2O, ammonium fluoride NH4F. Aluminium isopropoxide C9H21AlO3. . The material preparation was carried out according to the following experimental process steps:
(1) mixing the initial raw material with Ni0.995Al0.005O0.96F0.04Preparing materials according to a formula, and weighing NiCO3·2Ni(OH)2·4H2O 62.3915g、NH4F 0.7408g、C9H21AlO3 0.5106g;
(2) The preparation process is the same as the steps (2) to (3) in example 2.
The properties of the prepared material are shown in table 1, fig. 1 and fig. 2.
Example 4
This example is represented by the formula Ni1-xAlxO1-yFyAnd (3) preparing materials, wherein x is 0.01, and y is 0.04. The starting material is selected from basic nickel carbonate NiCo3·2Ni(OH)2·4H2O, ammonium fluoride NH4F. Aluminium isopropoxide C9H21AlO3. . The material preparation was carried out according to the following experimental process steps:
(1) mixing the initial raw material with Ni0.99Al0.01O0.96F0.04Preparing materials according to a formula, and weighing NiCO3·2Ni(OH)2·4H2O 62.0780g、NH4F 0.7408g、C9H21AlO3 1.0213g;
(2) The preparation process is the same as the steps (2) to (3) in example 2.
The properties of the prepared material are shown in table 1, fig. 1 and fig. 2.
Example 5
This example is represented by the formula Ni1-xAlxO1-yFyAnd (3) preparing materials, wherein x is 0.02, and y is 0.04. The starting material is selected from basic nickel carbonate NiCo3·2Ni(OH)2·4H2O, ammonium fluoride NH4F. Aluminium isopropoxide C9H21AlO3. . The material preparation was carried out according to the following experimental process steps:
(1) mixing the initial raw material with Ni0.98Al0.02O0.96F0.04Preparing materials according to a formula, and weighing NiCO3·2Ni(OH)2·4H2O 61.4509g、NH4F 0.7408g、C9H21AlO3 2.0425g;
(2) The preparation process is the same as the steps (2) to (3) in example 2.
The properties of the prepared material are shown in table 1, fig. 1 and fig. 2.
Example 6
This example is represented by the formula Ni1-xAlxO1-yFyAnd (3) preparing materials, wherein x is 0.03 and y is 0.05. The starting material is selected from basic nickel carbonate NiCo3·2Ni(OH)2·4H2O, ammonium fluoride NH4F. Aluminum isopropoxide C9H21AlO 3. . The material preparation was carried out according to the following experimental process steps:
(1) mixing the initial raw material with Ni0.97Al0.03O0.95F0.05Preparing materials according to a formula, and weighing NiCO3·2Ni(OH)2·4H2O 60.8239g、NH4F 0.926g、C9H21AlO3 3.0638g;
(2) The preparation process is the same as the steps (2) to (3) in example 2.
The properties of the prepared materials are shown in table 1, fig. 2 and fig. 3.
TABLE 1 index of Material Properties of examples
Claims (3)
1. A negative temp coefficient thermistor material is composed of Ni x1-Al x O1-yF y Whereinx= 0.0001~0.1,y = 0.0001~0.1。
2. The negative temperature coefficient thermistor material of claim 1, wherein the element Ni of the thermistor is prepared from the raw materials including simple substances, oxides, inorganic salts, organic salts; the raw material of the element Al for preparing the thermistor can be simple substances, oxides, inorganic salts and organic salts containing the elements; the raw material of element F for preparing the thermistor can be F-containing acid, fluoride and F-containing organic matter.
3. The negative temperature coefficient thermistor material according to claim 1, which is prepared by the following process:
(1) with basic nickel carbonate NiCO3•2Ni(OH)2•4H2O, ammonium fluoride NH4F. Aluminium isopropoxide C9H21AlO3As raw material, the raw material is mixed with Ni x1-Al x O1-yF y Preparing materials according to a formula, and weighing NiCO with corresponding weight3•2Ni(OH)2•4H2O、NH4F、C9H21AlO3;
(2) Respectively dissolving the raw materials weighed in the previous step, wherein NiCO is3•2Ni(OH)2•4H2Dissolving O in dilute nitric acid, and adding ammonia water to regulate pH value to 8, NH4F in distilled water, C9H21AlO3Dissolving in ethanol;
(3) mixing the three solutions prepared in the previous step together, stirring and uniformly mixing by using a magnetic stirring heater, and heating and drying;
(4) calcining the powder prepared in the last step at 850 ℃, and keeping the temperature for 5 hours;
(5) mixing the powder prepared in the last step with 5-8 ml of polyvinyl alcohol aqueous solution per 100 g of the powder, granulating and pressing into a blank; the blank body is in a disc shape, the diameter of the disc is 15 mm, and the thickness of the disc is 3.5-4.0 mm;
(6) sintering the blank obtained in the last step, wherein the sintering temperature is 1300 ℃, the heat preservation is carried out for 1 hour, and the heating and cooling rates are both 5 ℃ per minute, so as to obtain the NTC heat-sensitive ceramic chip;
and (3) grinding two surfaces of the NTC thermosensitive ceramic chip prepared in the last step, coating silver paste, and curing at 600 ℃ to prepare an electrode, thereby obtaining the NTC thermosensitive resistance element.
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