CN114993151A - Measuring device and measuring method - Google Patents
Measuring device and measuring method Download PDFInfo
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- CN114993151A CN114993151A CN202210546950.9A CN202210546950A CN114993151A CN 114993151 A CN114993151 A CN 114993151A CN 202210546950 A CN202210546950 A CN 202210546950A CN 114993151 A CN114993151 A CN 114993151A
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- seed crystal
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- distance
- silicon melt
- crucible
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 87
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- 239000007788 liquid Substances 0.000 claims abstract description 19
- 230000006698 induction Effects 0.000 claims abstract description 12
- 238000012545 processing Methods 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000691 measurement method Methods 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Radar Systems Or Details Thereof (AREA)
Abstract
The invention relates to a measuring device comprising: a furnace body; a crucible containing a silicon melt therein; the magnetic field generating structure is arranged at the periphery of the furnace body and used for outputting a magnetic field to the crucible, and the magnetic field generating structure comprises a first end surface far away from the silicon melt; the seed crystal lifting structure is used for controlling the lifting motion of the seed crystal; the first induction structure is arranged on the furnace body and used for sending a first signal when the seed crystal descends to pass through a first position; the second induction structure is arranged on the furnace body and used for sending a second signal when the seed crystal descends to a second position, and the second position is a position flush with the liquid level of the silicon melt; and the processing structure is used for acquiring a second distance b between the first position and the second position according to the first signal and the second signal and acquiring a first distance MP according to the second distance b, wherein MP is a + d-b, a is the distance between the first end face and the first position, and d is the distance between the first end face and the Gaussian face with the strongest magnetic field. The invention also relates to a measuring method.
Description
Technical Field
The invention relates to the technical field of silicon product manufacturing, in particular to a measuring device and a measuring method.
Background
MGP is the strongest horizontal Gaussian surface of the magnetic field, the distance between the MGP and the surface of the silicon melt is a very important crystal pulling process parameter, the distance between the strongest Gaussian surface and the liquid level of the silicon melt determines the convection of the silicon melt and controls the effective precipitation of oxygen, and the distribution condition of crystal defects in a crystal bar and the distribution uniformity of oxygen content are determined to a great extent. The uniformity of oxygen largely affects the uniformity of BMD (bulk Micro Defect). It is important how to measure this parameter accurately.
Disclosure of Invention
In order to solve the technical problem, the invention provides a measuring device and a measuring method, which improve the accuracy of measuring the distance between the strongest Gaussian plane and the liquid level of silicon melt.
In order to achieve the purpose, the embodiment of the invention adopts the technical scheme that: a measuring device for measuring a first distance MP between a gaussian surface of strongest magnetic field and a liquid level of a silicon melt in a first direction, the first direction being perpendicular to the liquid level of the silicon melt, the measuring device comprising:
a furnace body;
a crucible located within the furnace body, the crucible containing a silicon melt therein;
the magnetic field generating structure is arranged at the periphery of the furnace body and used for outputting a magnetic field to the crucible, and the magnetic field generating structure comprises a first end surface far away from the silicon melt in the first direction;
the seed crystal lifting structure is used for controlling the seed crystal to carry out lifting motion in the first direction;
the first induction structure is arranged on the furnace body, is positioned at a first position of the furnace body in the first direction, and is used for sending a first signal when the seed crystal pulling structure controls the seed crystal to descend through the first position. Wherein the second position is a position flush with the liquid level of the silicon melt;
the second induction structure is arranged on the furnace body and used for sending a second signal when the seed crystal pulling structure controls the seed crystal to descend to a second position;
and the processing structure is used for acquiring a second distance b of the first position and the second position in the first direction according to the first signal and the second signal, and acquiring the first distance MP according to the second distance b, wherein MP is a + d-b, a is the distance between the first end face and the first position in the first direction, and d is the distance between the first end face and the Gaussian surface with the strongest magnetic field in the first direction.
Optionally, the first sensing structure includes a correlation sensor, and a signal transmitting portion and a signal receiving portion of the correlation sensor are located on two opposite sides of the furnace body.
Optionally, the oven body includes a main body and a cover, and the signal transmitting portion and the signal receiving portion are located on opposite sides of the cover.
Optionally, the second sensing structure includes a current detection element, one end of the current detection element is connected to the seed crystal pulling structure, the other end of the current detection element is immersed in the silicon melt, and the second sensing structure is configured to send the second signal when the seed crystal pulling structure controls the seed crystal to descend until the seed crystal contacts with the silicon melt.
Optionally, the seed crystal pulling structure includes a seed chuck and a seed crystal fixed on the seed chuck, and one end of the current detection element is connected to the seed chuck.
Optionally, the crucible comprises a quartz crucible and a graphite crucible located outside the quartz crucible, and the bottom of the graphite crucible is supported and fixed by a crucible shaft.
Optionally, a crucible tray is arranged between the graphite crucible and the crucible shaft.
The embodiment of the present invention further provides a measuring method, which measures a first distance MP between a gaussian surface with the strongest magnetic field and a liquid level of a silicon melt in a first direction by using the measuring apparatus, including:
when the seed crystal pulling structure controls the seed crystal to descend to pass through the first position, a first signal is sent out;
when the seed crystal pulling structure controls the seed crystal to descend to a second position, a second signal is sent out;
and acquiring a second distance b of the first position and the second position in the first direction according to the first signal and the second signal, and acquiring the first distance MP according to the second distance b, wherein MP is a + d-b, a is a distance between the first end face and the first position in the first direction, and d is a distance between the first end face and a Gaussian face with the strongest magnetic field in the first direction.
Optionally, the second induction structure comprises a current detection element, one end of the current detection element is connected with the seed crystal pulling structure, and the other end of the current detection element is immersed in the silicon melt;
when the seed crystal pulling structure controls the seed crystal to descend to a second position, a second signal is sent out; the method specifically comprises the following steps:
and sending the second signal when the seed crystal pulling structure controls the seed crystal to descend until the seed crystal is contacted with the silicon melt.
The invention has the beneficial effects that: the distance from the strongest Gaussian plane to the liquid level of the silicon melt is accurately measured, so that the convection of the silicon melt is accurately controlled in the crystal pulling process, the effective precipitation of oxygen is controlled, the distribution condition of crystal defects and the distribution uniformity of oxygen content in the crystal bar are determined to a great extent, and the production of the crystal bar with high quality, uniform oxygen and uniform BMD is facilitated.
Drawings
FIG. 1 is a schematic view showing a structure of a measuring apparatus according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of a measurement method in the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It should be apparent that the described embodiments are only some of the embodiments of the present invention, and not all of them. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
As shown in fig. 1, the present embodiment provides a measuring apparatus for measuring a first distance MP between a gaussian surface with the strongest magnetic field and a liquid level of a silicon melt in a first direction, the first direction being a direction perpendicular to the liquid level of the silicon melt, the measuring apparatus comprising:
a furnace body;
a crucible located within the furnace body, the crucible containing a silicon melt therein;
the magnetic field generating structure is arranged at the periphery of the furnace body and used for outputting a magnetic field to the crucible, and the magnetic field generating structure comprises a first end surface far away from the silicon melt in the first direction;
the seed crystal lifting structure is used for controlling the seed crystal to carry out lifting motion in the first direction;
the first induction structure is arranged on the furnace body, is positioned at a first position of the furnace body in the first direction, and is used for sending a first signal when the seed crystal pulling structure controls the seed crystal to descend through the first position. Wherein the second position is a position flush with the liquid level of the silicon melt;
the second induction structure is arranged on the furnace body and used for sending a second signal when the seed crystal pulling structure controls the seed crystal to descend to a second position;
and the processing structure is used for acquiring a second distance b of the first position and the second position in the first direction according to the first signal and the second signal, and acquiring the first distance MP according to the second distance b, wherein MP is a + d-b, a is the distance between the first end face and the first position in the first direction, and d is the distance between the first end face and the Gaussian surface with the strongest magnetic field in the first direction.
And recording information, such as time, speed and the like, of the seed crystal passing through the first position and the second position in the descending process through the arrangement of the first induction structure and the second induction structure respectively so as to obtain a second distance b between the first end surface and the first position in the first direction, wherein the distance a between the first end surface and the first position can be obtained through direct measurement, the position of the magnetic field generating structure is fixed, therefore, the strongest Gaussian plane is fixed, and the distance d between the first end surface and the strongest Gaussian plane in the first direction can be obtained according to the first end surface of the magnetic field generating structure, so that the distance MP between the strongest Gaussian plane and the silicon melt can be obtained as a + d-b. By adopting the scheme, the distance MP between the strongest Gaussian plane and the silicon melt is obtained, the accuracy of the parameter is improved, and the method is simple and rapid.
The first sensing structure may have various specific structural forms, and exemplarily, the first sensing structure includes a correlation sensor, and a signal transmitting portion and a signal receiving portion of the correlation sensor are located at two opposite sides of the furnace body.
The positions of the signal emitting part and the signal receiving part in the first direction are both located at the first position, so that the first signal can be emitted when the seed crystal passes through the first position accurately.
The arrangement position of the correlation sensor can be set according to actual needs, that is, the first position can be set according to actual needs as long as the first position is located above the crucible in the furnace body, illustratively, the furnace body comprises a main body and a cover body, and the signal emitting part and the signal receiving part are located on two opposite sides of the cover body.
The correlation sensor may be disposed on an outer surface of the cover, which may avoid an influence on devices in the furnace body.
The second sensing structure may have various specific structural forms as long as the second signal can be sent when the seed crystal contacts the liquid level of the silicon melt, and exemplarily, the second sensing structure includes a current detection element, one end of the current detection element is connected to the seed crystal pulling structure, and the other end of the current detection element is immersed in the silicon melt, and the second sensing structure is used for sending the second signal when the seed crystal pulling structure controls the seed crystal to descend to the contact of the seed crystal and the silicon melt.
When the head of the seed crystal is contacted with the liquid level of the silicon melt, the seed crystal pulling structure and the silicon melt form a loop, the resistance value changes (the current changes), and the processing structure receives the second signal and obtains the distance between the first position and the second position in the first direction according to the first signal.
It should be noted that, the second sensing structure may further include a monitoring element, configured to monitor a change of the current detection element, and send the second signal when the current of the current detection element is monitored to be changed, but the disclosure is not limited thereto.
The monitoring element may include a switch circuit and a position information obtaining structure, when the head of the seed crystal contacts with the liquid level of the silicon melt, the seed crystal pulling structure and the silicon melt form a loop, the resistance value changes (the current changes), the switch circuit is closed, and a signal is sent to the position information obtaining structure, so that the position information obtaining structure obtains the distance between the first position and the second position according to the information such as the moving speed of the seed crystal and the time required for moving from the first position to the second position, but not limited thereto.
Illustratively, the seed crystal pulling structure comprises a seed crystal chuck and a seed crystal fixed on the seed crystal chuck, and one end of the current detection element is connected with the seed crystal chuck.
Illustratively, the crucible comprises a quartz crucible and a graphite crucible positioned outside the quartz crucible, and the bottom of the graphite crucible is supported and fixed by a crucible shaft.
Illustratively, a crucible tray is disposed between the graphite crucible and the crucible shaft.
The embodiment of the present invention further provides a measuring method, which measures a first distance MP between a gaussian surface with the strongest magnetic field and a liquid level of a silicon melt in a first direction by using the measuring apparatus, including:
when the seed crystal pulling structure controls the seed crystal to descend to pass through the first position, a first signal is sent out;
when the seed crystal pulling structure controls the seed crystal to descend to a second position, a second signal is sent out;
and acquiring a second distance b of the first position and the second position in the first direction according to the first signal and the second signal, and acquiring the first distance MP according to the second distance b, wherein MP is a + d-b, a is a distance between the first end face and the first position in the first direction, and d is a distance between the first end face and a Gaussian face with the strongest magnetic field in the first direction.
Exemplarily, the second sensing structure comprises a current detection element, one end of the current detection element is connected to the seed crystal pulling structure, and the other end of the current detection element is immersed in the silicon melt;
when the seed crystal pulling structure controls the seed crystal to descend to a second position, a second signal is sent out; the method specifically comprises the following steps:
and sending the second signal when the seed crystal pulling structure controls the seed crystal to descend until the seed crystal is contacted with the silicon melt.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (9)
1. A measuring device for measuring a first distance MP between a gaussian surface of strongest magnetic field and a liquid level of a silicon melt in a first direction, the first direction being perpendicular to the liquid level of the silicon melt, the measuring device comprising:
a furnace body;
a crucible located within the furnace body, the crucible containing a silicon melt therein;
the magnetic field generating structure is arranged at the periphery of the furnace body and used for outputting a magnetic field to the crucible, and the magnetic field generating structure comprises a first end surface far away from the silicon melt in the first direction;
the seed crystal lifting structure is used for controlling the seed crystal to carry out lifting motion in the first direction;
the first induction structure is arranged on the furnace body, is positioned at a first position of the furnace body in the first direction, and is used for sending a first signal when the seed crystal pulling structure controls the seed crystal to descend through the first position;
the second induction structure is arranged on the furnace body and used for sending a second signal when the seed crystal pulling structure controls the seed crystal to descend to a second position, wherein the second position is a position flush with the liquid level of the silicon melt;
and the processing structure is used for acquiring a second distance b of the first position and the second position in the first direction according to the first signal and the second signal, and acquiring the first distance MP according to the second distance b, wherein MP is a + d-b, a is the distance between the first end face and the first position in the first direction, and d is the distance between the first end face and the Gaussian surface with the strongest magnetic field in the first direction.
2. The measuring device of claim 1, wherein the first sensing structure comprises a correlation sensor having a signal emitting portion and a signal receiving portion located on opposite sides of the furnace body.
3. The measuring apparatus according to claim 2, wherein the furnace body includes a main body and a cover, and the signal emitting portion and the signal receiving portion are located on opposite sides of the cover.
4. A measuring apparatus as set forth in claim 1 wherein the second sensing structure comprises a current sensing element having one end connected to the seed crystal pulling structure and the other end submerged in the silicon melt, the second sensing structure being configured to issue the second signal when the seed crystal pulling structure controls the seed crystal to be lowered into contact with the silicon melt.
5. A measuring apparatus according to claim 4, wherein the seed crystal pulling mechanism comprises a seed chuck and a seed crystal fixed to the seed chuck, and one end of the current detecting element is connected to the seed chuck.
6. The measuring apparatus according to claim 1, wherein the crucible comprises a quartz crucible and a graphite crucible located outside the quartz crucible, and a bottom of the graphite crucible is supported and fixed by a crucible shaft.
7. A measuring device according to claim 6, characterized in that a crucible tray is arranged between the graphite crucible and the crucible shaft.
8. A measuring method for measuring a first distance MP between a Gaussian surface with the strongest magnetic field and a liquid level of a silicon melt in a first direction by using the measuring device of any one of claims 1 to 7, comprising:
when the seed crystal pulling structure controls the seed crystal to descend to pass through the first position, a first signal is sent out;
when the seed crystal pulling structure controls the seed crystal to descend to a second position, a second signal is sent out;
and acquiring a second distance b of the first position and the second position in the first direction according to the first signal and the second signal, and acquiring the first distance MP according to the second distance b, wherein MP is a + d-b, a is a distance between the first end surface and the first position in the first direction, and d is a distance between the first end surface and a gaussian surface with the strongest magnetic field in the first direction.
9. The measurement method according to claim 8, wherein the second induction structure comprises a current detection element, one end of the current detection element is connected with the seed crystal pulling structure, and the other end of the current detection element is immersed in the silicon melt;
when the seed crystal pulling structure controls the seed crystal to descend to a second position, a second signal is sent out; the method specifically comprises the following steps:
and sending the second signal when the seed crystal pulling structure controls the seed crystal to descend until the seed crystal is contacted with the silicon melt.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210546950.9A CN114993151B (en) | 2022-05-18 | Measuring device and measuring method | |
| TW111139986A TWI812517B (en) | 2022-05-18 | 2022-10-21 | Measuring device and measuring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210546950.9A CN114993151B (en) | 2022-05-18 | Measuring device and measuring method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114993151A true CN114993151A (en) | 2022-09-02 |
| CN114993151B CN114993151B (en) | 2024-10-22 |
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