CN114989826A - Etching solution for controlling metal layer and semiconductor layer morphology and application thereof - Google Patents

Etching solution for controlling metal layer and semiconductor layer morphology and application thereof Download PDF

Info

Publication number
CN114989826A
CN114989826A CN202210629068.0A CN202210629068A CN114989826A CN 114989826 A CN114989826 A CN 114989826A CN 202210629068 A CN202210629068 A CN 202210629068A CN 114989826 A CN114989826 A CN 114989826A
Authority
CN
China
Prior art keywords
acid
etching solution
etching
mass
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210629068.0A
Other languages
Chinese (zh)
Inventor
邵振
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Heda Electronic Technology Co ltd
Original Assignee
Jiangsu Heda Electronic Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Heda Electronic Technology Co ltd filed Critical Jiangsu Heda Electronic Technology Co ltd
Priority to CN202210629068.0A priority Critical patent/CN114989826A/en
Publication of CN114989826A publication Critical patent/CN114989826A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers
    • H01L21/47635—After-treatment of these layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

The invention discloses an etching solution for controlling the morphology of a metal layer and a semiconductor layer, which comprises the following components in part by weight: inorganic acid accounting for 5-20% of the etching solution by mass, organic acid accounting for 8-15% of the etching solution by mass, alkaline substance accounting for 8-15% of the etching solution by mass, additive accounting for 4-8% of the etching solution by mass, hydrogen peroxide accounting for 6-9% of the etching solution by mass, and water accounting for 40-60% of the etching solution by mass; the etching solution can etch the metal layer and the semiconductor layer simultaneously, shortens the etching time, further shortens the production period of the liquid crystal panel, and improves the productivity of the liquid crystal panel.

Description

Etching solution for controlling metal layer and semiconductor layer morphology and application thereof
Technical Field
The invention relates to the field of etching solutions, and further relates to an etching solution for controlling the forms of a metal layer and a semiconductor layer and application thereof.
Background
Indium Gallium Zinc Oxide (IGZO) is prepared from indium oxide (In) 2 O 3 ) Gallium oxide (Ga) 2 O 3 ) And zinc oxide (ZnO), the oxygen content of which has an important influence on the film characteristics of the oxide semiconductor, and Ga 2 O 3 The ionic bond with strong action can inhibit the formation of oxygen vacancy defects; in 2 O 3 Compared with covalent semiconductors such as amorphous silicon and the like, the solid core cubic ferromanganese structure with stable structure at room temperature can form an expansion state at the bottom of a conduction band, so that more free electrons are generated, and the mobility of the electrons is improved; zn in ZnO 2+ Can form a stable wurtzite tetrahedral structure, so that the metal oxide IGZO forms a stable amorphous structure.
The thin film transistor liquid crystal display uses a thin film transistor technology to realize color image display with high capacity, high definition and high resolution, and is mainly applied to the fields of computers, televisions, mobile phones, wearable electronic equipment and the like. A thin film transistor is an insulated gate field effect transistor made of a semiconductor material, and is generally composed of a semiconductor thin film material and a side insulating layer. Therefore, the choice of semiconductor thin film material is critical to the imaging quality of the display. Metal oxides have the characteristics of high mobility, good flexibility, high stability, high transparency and the like, and thus, in recent years, the metal oxides rapidly become the key point of research and development in the display field.
When the metal etching is applied to the manufacturing process of the liquid crystal display, a composite metal layer composed of metal niobium (Nb), molybdenum (Mo), copper (Cu), titanium (Ti) and the like, and a metal oxide layer composed of Indium Tin Oxide (ITO), Indium Gallium Zinc Oxide (IGZO) and the like need to be etched, so that a conductive lead is finally formed, and the metal etching is also applied to the manufacturing of a metal interconnection line in the manufacturing process of a semiconductor.
In the existing metal etching operation, different etching solutions are used for etching a certain metal independently, but when the types of the metals are more, the etching operation process is complex, and the production period is longer. Therefore, a new formula of composite etching solution is needed to meet the requirement of etching various metals and metal oxides simultaneously, and achieve the purposes of releasing productivity and shortening production cycle.
Disclosure of Invention
The invention aims to provide an etching solution for controlling the forms of a metal layer and a semiconductor layer, which has a proper etching speed, higher etching precision and higher bearing capacity when etching the metal layer and the semiconductor layer, so that the etching solution can further shorten the production period of a liquid crystal panel and improve the productivity of the liquid crystal panel.
It is a further object of the present invention to provide the use of an etching solution for morphology control of metal and semiconductor layers.
In order to achieve the above object, the present invention provides an etching solution for morphology control of a metal layer and a semiconductor layer, the etching solution comprising the following components:
the etching solution comprises, by mass, 5-20% of inorganic acid, 8-15% of organic acid, 8-15% of alkaline substance, 4-8% of additive, 6-9% of hydrogen peroxide and 40-60% of water.
The alkaline substance of the present invention comprises a first main group metal hydroxide
The additive comprises a semiconductor corrosion inhibitor, wherein the semiconductor corrosion inhibitor accounts for 0.3-0.8% of the etching solution by mass.
The etching solution provided by the invention can be used for simultaneously etching the metal layer and the semiconductor layer by virtue of the synergistic cooperation of the components, so that the balance of the etching speed and the etching precision is realized, and a proper etching inclination angle (taper angle) is obtained.
The metal layer of the present invention may be a single layer or a plurality of layers.
In some embodiments of the invention, the metal layer comprises an elemental metal layer formed from one of niobium (Nb), molybdenum (Mo), copper (Cu), or titanium (Ti).
In some embodiments of the invention, the metal layer comprises an alloy layer of at least two metals selected from niobium (Nb), molybdenum (Mo), copper (Cu), or titanium (Ti).
When the metal layer is a single layer, the metal layer may be a simple substance metal layer or an alloy layer.
When the metal layer is a multilayer, the metal layer may be a multilayer composed of a simple substance metal layer, a multilayer composed of an alloy layer, or a multilayer composed of a simple substance metal layer and an alloy layer.
It should be noted that, the simple metal layer refers to a metal layer composed of only one metal; the alloy layer means a metal layer composed of at least two metals.
In some embodiments of the invention, the metal layer comprises at least an elemental metal copper layer.
In some embodiments of the invention, the metal layer comprises an elemental metal molybdenum layer and an elemental metal copper layer.
In some embodiments of the invention, the metal layer comprises an elemental metal niobium layer and an elemental metal copper layer.
In some embodiments of the invention, the metal layer comprises an elemental metal titanium layer and an elemental metal copper layer. In some embodiments of the invention, the metal layer comprises an elemental metal molybdenum layer, an elemental metal titanium layer, and an elemental metal copper layer.
In some embodiments of the invention, the metal layer comprises an elemental metal molybdenum layer, an elemental metal niobium layer, and an elemental metal copper layer.
In some embodiments of the invention, the metal layer comprises an elemental metal titanium layer, an elemental metal niobium layer, and an elemental metal copper layer.
The semiconductor layer is composed of metal oxide selected from Indium Tin Oxide (ITO) or Indium Gallium Zinc Oxide (IGZO).
In some embodiments of the invention, the metal oxide is selected from Indium Tin Oxide (ITO).
In some embodiments of the invention, the metal oxide is selected from Indium Gallium Zinc Oxide (IGZO).
The thickness of the metal layer is
Figure BDA0003679104330000031
Further preferred is
Figure BDA0003679104330000032
Further preferably
Figure BDA0003679104330000033
The thickness of the semiconductor layer is
Figure BDA0003679104330000034
Further preferably
Figure BDA0003679104330000035
Further preferred is
Figure BDA0003679104330000036
In some embodiments of the invention, the thicknesses of the metal layer and the semiconductor layer are combined to be
Figure BDA0003679104330000037
And
Figure BDA0003679104330000038
when the thicknesses of the metal layer and the semiconductor layer are within the range, the etching solution can obtain relatively better etching effect.
In some embodiments of the present invention, the metal layer may have a thickness selected to be
Figure BDA0003679104330000039
Figure BDA00036791043300000310
Or
Figure BDA00036791043300000311
In some embodiments of the invention, the thickness of the semiconductor layer is selected to be
Figure BDA00036791043300000312
Figure BDA00036791043300000313
Figure BDA00036791043300000314
Or
Figure BDA00036791043300000315
In the etching solution, the inorganic acid accounts for 5-20% of the etching solution by mass.
In some embodiments of the present invention, the percentage of the inorganic acid in the etching solution by mass may be preferably 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%. The etching solution disclosed by the invention achieves the purpose of regulating and controlling the etching speed and the etching precision of the etching solution by selecting the type of a proper inorganic acid and accurately controlling the addition amount of each inorganic acid to be matched with other components of the etching solution, the inventor of the application finds that when the addition amount of the inorganic acid is less than 5% of the total mass of the etching solution, the etching speed of the etching solution is too slow, the etching precision is poor, when the inorganic acid accounts for no more than 20% of the mass of the etching solution, the etching solution is favorable for obtaining the proper etching speed and the etching precision meeting the production requirement, the inventor further finds that when the mass percentage of the inorganic acid in the etching solution is preferably 6-14%, the better etching speed and etching precision can be obtained, and further, when the mass percentage of the inorganic acid in the etching solution is preferably 9-14%, the etching solution can obtain the better etching speed and etching precision And (4) etching precision.
In the etching solution of the present invention, the inorganic acid is selected from one or more of sulfuric acid, hydrochloric acid, nitric acid, iodic acid, perchloric acid, phosphoric acid, boric acid, bromic acid, xenon acid, orthosilicic acid, metaphosphoric acid, and hydrofluoric acid.
In some embodiments of the invention, the inorganic acid is selected from the group consisting of one or more of nitric acid, perchloric acid, phosphoric acid, iodic acid, bromic acid, or metaphosphoric acid.
In some embodiments of the invention, the inorganic acid comprises at least two of nitric acid, hydrochloric acid, perchloric acid, phosphoric acid, boric acid, bromic acid, hydrofluoric acid.
In some embodiments of the invention, the inorganic acid comprises two of nitric acid, hydrochloric acid, perchloric acid, phosphoric acid, boric acid, bromic acid, hydrofluoric acid.
In some embodiments of the invention, the inorganic acid comprises a group consisting of nitric acid and hydrochloric acid.
In some embodiments of the invention, the inorganic acid comprises a group consisting of nitric acid and hydrofluoric acid.
In some embodiments of the invention, the inorganic acid comprises a group consisting of perchloric acid and hydrochloric acid.
In some embodiments of the invention, the inorganic acid comprises a group consisting of perchloric acid and hydrofluoric acid.
The etching liquid can adjust the etching speed of metal and metal oxide by matching two or more inorganic acids.
In some embodiments of the invention, when the nitric acid is included in the combination of two inorganic acids, the nitric acid accounts for 2% to 7% by mass of the etching solution, and may be 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%, 5.5%, 6%, 6.5%, 7%; when the combination of the two inorganic acids contains perchloric acid, the perchloric acid accounts for 4-6% of the etching solution by mass, and can be 4%, 4.5%, 5%, 5.5% and 6%; when the combination of the two inorganic acids contains hydrochloric acid, the mass percentage of the hydrochloric acid in the etching solution is 1-5%, and can be 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%; when hydrofluoric acid is contained in the combination of the two inorganic acids, the mass percentage of hydrofluoric acid in the etching solution is 1-2%, and may be 1%, 1.2%, 1.4%, 1.6%, 1.8%, or 2%.
In some embodiments of the invention, the inorganic acid comprises at least three of nitric acid, hydrochloric acid, perchloric acid, phosphoric acid, boric acid, bromic acid, hydrofluoric acid.
In some embodiments of the invention, the inorganic acid comprises a group consisting of nitric acid, hydrochloric acid, perchloric acid, phosphoric acid, boric acid, bromic acid, hydrofluoric acid.
In some embodiments of the invention, the inorganic acid comprises a group consisting of nitric acid, hydrochloric acid, and hydrofluoric acid.
In some embodiments of the invention, the inorganic acid comprises a group consisting of nitric acid, hydrochloric acid, and boric acid. In some embodiments of the invention, the inorganic acid comprises a member of the group consisting of perchloric acid, hydrochloric acid and hydrofluoric acid.
In some embodiments of the present invention, when the group of three inorganic acids includes nitric acid, the nitric acid accounts for 2% to 7% by mass of the etching solution of the present invention, and further, the nitric acid may account for 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%, 5.5%, 6%, 6.5%, and 7% by mass of the etching solution of the present invention.
In some embodiments of the present invention, when perchloric acid is included in the group consisting of three inorganic acids, the perchloric acid accounts for 4% to 6% by mass of the etching solution of the present invention, and further, the perchloric acid accounts for 4%, 4.5%, 5%, 5.5%, 6% by mass of the etching solution of the present invention.
In some embodiments of the present invention, when hydrochloric acid is included in the group consisting of three inorganic acids, the hydrochloric acid accounts for 1 to 5% by mass of the etching solution of the present invention, and further, the hydrochloric acid may account for 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5% by mass of the etching solution of the present invention.
In some embodiments of the present invention, when hydrofluoric acid is included in the group consisting of three inorganic acids, the content of hydrofluoric acid in the etching solution of the present invention is 1 to 2% by mass, and further, the content of hydrofluoric acid in the etching solution of the present invention is 1%, 1.2%, 1.4%, 1.6%, 1.8%, or 2% by mass.
In some embodiments of the present invention, when boric acid is included in the group consisting of the three inorganic acids, the boric acid accounts for 1 to 3% by mass of the etching solution of the present invention, and further, the boric acid may account for 1%, 1.2%, 1.4%, 1.6%, 1.8%, 2%, 2.5%, 3% by mass of the etching solution of the present invention.
In some embodiments of the present invention, preferably, the inorganic acid comprises a group consisting of nitric acid, hydrochloric acid and hydrofluoric acid.
In some embodiments of the invention, the mass percentages of the group consisting of nitric acid, hydrochloric acid and hydrofluoric acid are (2-7): (1-5): (1-2).
In some embodiments of the invention, the mass percentages of the group consisting of nitric acid, hydrochloric acid and hydrofluoric acid are (3-5): (4-5): (1.5-2).
In some embodiments of the invention, the inorganic acid comprises a group consisting of nitric acid, hydrochloric acid, and boric acid.
In some embodiments of the invention, the nitric acid, hydrochloric acid and boric acid are in the group consisting of (2-7) by mass: (1-5): (1-3).
In some embodiments of the invention, the nitric acid, hydrochloric acid and boric acid are in the group consisting of (3-5) by mass: (3-5): (1.5-2.5).
In some embodiments of the invention, the inorganic acid comprises a group consisting of perchloric acid, hydrochloric acid and hydrofluoric acid.
In some embodiments of the invention, the perchloric acid, hydrochloric acid and hydrofluoric acid are present in the group consisting of (4-6) by mass: (1-5): (1-2).
In some embodiments of the invention, the perchloric acid, hydrochloric acid and hydrofluoric acid are present in the group consisting of (4-5) by mass: (3-5): (1.5-2).
The organic acid accounts for 8-15% of the etching solution by mass. In some embodiments of the present invention, the organic acid may account for 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15% by weight of the etching solution of the present invention, and after a lot of experiments and verifications, the inventors of the present invention found that the combination of the organic acid and the inorganic acid of the present invention has a good etching effect on some specific metals such as copper, molybdenum, and niobium, and in particular, by screening the type and content of the organic acid and matching with the type and content of the inorganic acid after screening, the etching rate of the metal can be effectively and precisely adjusted.
In some embodiments of the present invention, the mass percentage ratio of the inorganic acid to the organic acid is (5-20): (8-15), further preferably: (8-12): (8-11)
The organic acid is selected from one or more of propionic acid, malonic acid, succinic acid, malic acid, alanine, citric acid, 2-methylbenzoic acid, phthalic acid and 1,2, 4-benzene tricarboxylic acid.
In some embodiments of the present invention, the organic acid is selected from the group consisting of one or more of malonic acid, succinic acid, malic acid or citric acid, and can be used in combination with an inorganic acid to adjust the etching rate of copper, molybdenum, niobium, etc.;
in some embodiments of the invention, the organic acid is selected from the group consisting of at least two of malonic acid, succinic acid, malic acid, or citric acid.
In some embodiments of the invention, the organic acid is selected from the group consisting of two, three, or four of malonic acid, succinic acid, malic acid, or citric acid.
In some embodiments of the present invention, when the organic acid includes malonic acid, the malonic acid accounts for 6 to 9% by mass of the etching solution of the present invention.
In some embodiments of the present invention, the content of the malonic acid in the etching solution of the present invention may be 6%, 6.5%, 7%, 7.5%, 8%, 8.5%, 9% by mass.
In some embodiments of the present invention, when the organic acid includes succinic acid, the succinic acid accounts for 2 to 8% by mass of the etching solution of the present invention.
In some embodiments of the present invention, the content of the succinic acid in the etching solution of the present invention may be 2%, 3%, 4%, 5%, 6%, 7%, 8% by mass.
In some embodiments of the present invention, when the organic acid comprises malic acid, the malic acid accounts for 1-3% by mass of the etching solution.
In some embodiments of the present invention, the malic acid may be 1%, 1.5%, 2%, 2.5%, 3% by mass of the etching solution of the present invention.
In some embodiments of the invention, when the organic acid comprises citric acid, the citric acid accounts for 4-6% of the etching solution by mass.
In some embodiments of the present invention, the citric acid may be 4%, 4.5%, 5%, 5.5%, 6% by weight of the etching solution of the present invention.
In some embodiments of the invention, the organic acid comprises the group consisting of malonic acid and malic acid.
In some embodiments of the invention, the ratio of the mass percentages of the malonic acid and the malic acid is (6-9) to (1-3).
In some embodiments of the invention, the ratio of the mass percentages of the malonic acid and the malic acid is (7-8) to (1-3).
In some embodiments of the invention, the organic acid comprises a combination of succinic acid and malic acid.
In some embodiments of the invention, the ratio of the mass percentages of the succinic acid and the malic acid is (2-8) to (1-3).
In some embodiments of the invention, the ratio of the mass percentages of the succinic acid and the malic acid is (5-6) to (1-3).
In some embodiments of the invention, the organic acid is a fatty acidIncludedMalonic acid and citric acid.
In some embodiments of the invention, the ratio of the mass percent of the malonic acid to the mass percent of the citric acid is (1-9) to (1-4).
In some embodiments of the invention, the ratio of the mass percentages of the malonic acid and the citric acid is (6-8): 4.
The alkaline substance accounts for 8-15% of the etching solution by mass.
In some embodiments of the present invention, the alkaline substance may account for 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15% by mass of the etching solution of the present invention.
The alkaline substance of the present invention includes a hydroxide of a first main group metal, and the inventors of the present invention have found that when the hydroxide of a first main group metal is used in combination with the inorganic acid and the organic acid of the present invention, etching of a semiconductor layer composed of an IGZO or ITO metal oxide can be promoted, and that the hydroxide of a first main group metal can clean grease-like impurities remaining on glass.
The hydroxide of the first main group metal accounts for 1-3% of the etching solution by mass.
In some embodiments of the present invention, the content of the hydroxide of the first main group metal in the etching solution of the present invention may be 1%, 1.5%, 2%, 2.5%, 3% by mass.
In some embodiments of the invention, the hydroxide of the first main group metal comprises one or more of lithium hydroxide, sodium hydroxide, potassium hydroxide, rubidium hydroxide.
In the etching solution of the present invention, the alkaline substance further includes one or more of organic base, α -amino acid, and ferric hydroxide.
On one hand, the alkaline substance can keep the pH value of the etching solution stable, so that the pH value of the etching solution is in the range of 1-4, the etching solution has better stability, and the etching effect is more stable; on the other hand, the etching speed can be further adjusted.
At least one of the organic base, the alpha-amino acid and the ferric hydroxide accounts for 6-13% of the etching solution by mass.
In some embodiments of the present invention, the group consisting of one or more of the organic base, the α -amino acid, and the ferric hydroxide may be present in an amount of 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13% by mass of the etching solution of the present invention. When the content of one or more of the organic base, the alpha-amino acid and the ferric hydroxide in the etching solution is less than 6% by mass, the bearing capacity of the etching solution is reduced, and when the content of the organic base, the alpha-amino acid and the ferric hydroxide exceeds 13%, the pH value of the etching solution is increased, and the etching speed of the etching solution is reduced.
In some embodiments of the invention, the organic base comprises one or more of the group consisting of aqueous ammonia, tetramethylammonium hydroxide, dimethylethanolamine, ethylenediaminetetraacetic acid.
The etching solution provided by the invention can further improve the bearing capacity of the etching solution by screening the selection and content of the organic base.
The organic alkali accounts for 8 to 13 percent of the etching solution by mass,
in some embodiments of the present invention, the organic base may account for 8%, 9%, 10%, 11%, 12%, 13% by mass of the etching solution of the present invention.
In some embodiments of the present invention, the mass ratio of the organic base to the total addition amount of the inorganic acid and the organic acid is (5-13): (15-22).
In some embodiments of the present invention, the α -amino acid includes one or more of glycine, methionine, proline, alanine, valine, glutamine, leucine, isoleucine, tryptophan, tyrosine, cysteine, phenylalanine, asparagine, threonine and serine, and the addition of the α -amino acid can further improve the load bearing capacity of the etching solution.
The mass percentages of the hydroxide of the first main group metal and the organic base are (1-3): (8-12).
The semiconductor corrosion inhibitor is selected from organic compounds containing sulfydryl.
In some embodiments of the present invention, the thiol-group-containing organic compound is selected from at least one of dimercaprol, mercaptobenzothiazole.
The semiconductor corrosion inhibitor accounts for 0.3-0.8% of the etching solution by mass.
In some embodiments of the invention, the content of the semiconductor corrosion inhibitor in the etching solution of the invention may be 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8% by mass. The sulfydryl and metal ions have strong binding capacity and can form a slow release layer around the semiconductor layer, so that the etching speed and the form of the semiconductor layer can be controlled by controlling the type and the content of an organic compound containing sulfydryl, wherein the mass percentage of the organic compound containing sulfydryl to the group consisting of organic acid and inorganic acid is (0.3-0.7): (15-22) otherwise incomplete etching of the metal layer may result.
The additive also comprises a metal corrosion inhibitor and a hydrogen peroxide stabilizer, so that the etching speed and the etching precision of metal can be further adjusted, the etching deviation is reduced, the stability of an etching solution can be improved, and the storage time is prolonged.
The metal corrosion inhibitor comprises one or more of 2, 5-dimethyl o-phenylenediamine, glycerol, benzotriazole, 5-octyl-1, 2, 3-benzotriazole, 5-methyl-1, 2, 3-benzotriazole, 5-mercapto-1-methyltetrazole and the like.
The metal corrosion inhibitor accounts for 0.6-1.2% of the etching solution by mass.
In some embodiments of the present invention, the metal corrosion inhibitor may be 0.6%, 0.7%, 0.8%, 0.9%, 1.0%, 1.1%, 1.2% by mass of the etching solution of the present invention. The metal corrosion inhibitor can form a corrosion-inhibiting layer on the surface of the metal layer, so as to further adjust the etching speed and precision of the metal.
The hydrogen peroxide stabilizer comprises phenylurea.
The hydrogen peroxide stabilizer accounts for 6-9% of the etching solution in percentage by mass.
In some embodiments of the present invention, the hydrogen peroxide stabilizer may account for 6%, 6.5%, 7%, 7.2%, 7.5%, 7.8%, 8%, 8.5%, 9% of the etching solution according to the present invention by mass.
In some embodiments of the invention, the hydrogen peroxide stabilizer accounts for 7.5-8% of the etching solution by mass.
The invention also provides an etching process of the etching solution, which comprises the following steps:
according to the etching process of the etching solution, the use temperature of the etching solution is 31 +/-1 ℃.
The etching process of the etching solution adopts a spraying type etching mode, and the flow speed is not less than 20m 3 /h。
In the etching process of the etching solution, the etching time of the etching solution is 30-70s, and more preferably 60-70 s.
According to the etching process of the etching solution, the pressure range of the etching solution is 0.001-0.003 MPa when the etching solution is used.
Compared with the prior art, the etching solution provided by the invention has the following beneficial effects:
1. the etching solution provided by the invention can realize synchronous etching of the metal layer and the semiconductor layer through the synergistic effect of the components, and the production period of the liquid crystal panel is greatly shortened.
2. The etching solution can control the etching speed and the etching form of the metal layer and the semiconductor layer in the etching process, the etching deviation (CD-bias) value is controlled to be 0.9-1.8 mu m, the etching inclination angle (Taper angle) is controlled to be 42-52 degrees, the copper ion bearing capacity of the etching solution can reach more than 4000ppm, and the service cycle of the etching solution is prolonged.
3. The etching solution provided by the invention can achieve the same etching effect for metal layers and semiconductor layers with different thicknesses and composed of simple substance metals and/or alloy layers by screening the types and the contents of all components.
Detailed Description
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, so as to understand the technical solutions of the present invention specifically and in detail, but not to be understood as the limitation of the protection scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. It should be understood that the technical solutions provided by the present invention, which are obtained by logical analysis, reasoning or limited experiments, are within the scope of the appended claims. Therefore, the protection scope of the patent of the invention is subject to the content of the appended claims, and the description can be used for explaining the content of the claims.
Example 1
The etching solution is used for etching a metal layer and a semiconductor layer, the semiconductor layer is an IGZO layer, and the thickness of the semiconductor layer is
Figure BDA0003679104330000111
The metal layer is formed by compounding a metal molybdenum layer and a metal copper layer, wherein the thicknesses of the molybdenum layer and the copper layer are respectively
Figure BDA0003679104330000112
And
Figure BDA0003679104330000113
the etching solution comprises the following components in percentage by mass:
Figure BDA0003679104330000114
Figure BDA0003679104330000121
in this embodiment, the etching temperature of the etching solution is 31 ℃, the spraying etching is adopted, and the flow rate of the etching solution is 20m 3 The etching time is 68s, and the pressure of the etching solution is controlled to be 0.001MPa when the etching solution is used.
Example 2
The etching solution is used for etching a metal layer and a semiconductor layer, the semiconductor layer is an IGZO layer, and the thickness of the semiconductor layer is
Figure BDA0003679104330000122
The metal layer is formed by compounding a metal molybdenum layer and a metal copper layer, wherein the thicknesses of the molybdenum layer and the copper layer are respectively
Figure BDA0003679104330000123
And
Figure BDA0003679104330000124
the etching solution comprises the following components in percentage by mass:
water (W) 61.3
Hydrochloric acid 1
Nitric acid 3
Hydrofluoric acid 2
Malonic acid 7
Malic acid 2
Aqueous ammonia 6
Sodium hydroxide 2
Tetramethyl ammonium hydroxide 3
5-octyl-1, 2, 3-benzotriazole 1.2
Mercaptobenzothiazoles 0.5
Phenyl ureas 3
Hydrogen peroxide solution 8
Total up to 100
In this embodiment, the etching temperature of the etching solution is 31 deg.C, the flow rate of the etching solution is 20m, and spray etching is adopted 3 The etching time is 68s, and the pressure of the etching solution is controlled to be 0.001MPa when the etching solution is used
Example 3
The etching solution is used for etching a metal layer and a semiconductor layer, wherein the semiconductor layer is IA GZO layer, the thickness of the semiconductor layer is
Figure BDA0003679104330000125
The metal layer is formed by compounding a metal molybdenum layer and a metal copper layer, wherein the thicknesses of the molybdenum layer and the copper layer are respectively
Figure BDA0003679104330000126
And
Figure BDA0003679104330000127
the etching solution comprises the following components in percentage by mass:
water (W) 52.7
Hydrochloric acid 5
Nitric acid 2
Hydrofluoric acid 2
Malonic acid 9
Malic acid 3
Aqueous ammonia 7
Sodium hydroxide 1
Tetramethyl ammonium hydroxide 5
5-octyl-1, 2, 3-benzotriazole 0.8
Mercaptobenzothiazoles 0.5
Phenyl ureas 4
Hydrogen peroxide solution 8
Is totaled 100
In this embodiment, the etching temperature of the etching solution is 31 ℃, the spraying etching is adopted, and the flow rate of the etching solution is 20m 3 The etching time is 68s, and the pressure of the etching solution is controlled to be 0.001MPa when the etching solution is used.
Example 4
The etching solution is used for etching a metal layer and a semiconductor layer, the semiconductor layer is an IGZO layer, and the thickness of the semiconductor layer is
Figure BDA0003679104330000131
The metal layer is formed by compounding a metal molybdenum layer and a metal copper layer, wherein the thicknesses of the molybdenum layer and the copper layer are respectively
Figure BDA0003679104330000132
And
Figure BDA0003679104330000133
the etching solution comprises the following components in percentage by mass:
water (W) 53.5
Hydrochloric acid 5
Nitric acid 4
Hydrofluoric acid 1
Malonic acid 7
Malic acid 3
Aqueous ammonia 5
Sodium hydroxide 2
Tetramethyl ammonium hydroxide 6
5-octyl-1, 2, 3-benzotriazole 1.2
Mercaptobenzothiazoles 0.5
Phenyl ureas 4
Hydrogen peroxide solution 7.8
Total up to 100
In this embodiment, the etching temperature of the etching solution is 31 deg.C, the flow rate of the etching solution is 20m, and spray etching is adopted 3 The etching time is 68s, and the pressure of the etching solution is controlled to be 0.001MPa when the etching solution is used.
Comparative example 1
The etching solution of the comparative example is used for etching a metal layer and a semiconductor layer, wherein the semiconductor layer is an IGZO layer, and the thickness of the semiconductor layer is
Figure BDA0003679104330000141
The metal layer is formed by compounding a metal molybdenum layer and a metal copper layer, wherein the thicknesses of the molybdenum layer and the copper layer are respectively
Figure BDA0003679104330000142
And
Figure BDA0003679104330000143
the etching solution comprises the following components in percentage by mass:
water (I) 56.3
Hydrochloric acid 4
Nitric acid 4
Hydrofluoric acid 2
Malonic acid 7
Malic acid 2
Ammonia water 6
Sodium hydroxide 2
Tetramethyl ammonium hydroxide 4
5-octyl-1, 2, 3-benzotriazole 1
Mercaptobenzothiazoles 0.9
Phenyl ureas 3
Hydrogen peroxide solution 7.8
Is totaled 100
In this embodiment, the etching temperature of the etching solution is 31 ℃, the spraying etching is adopted, and the flow rate of the etching solution is 20m 3 The etching time is 68s, and the pressure of the etching solution is controlled to be 0.001MPa when the etching solution is used. Comparative example 1 differs from example 1 only in the amount of added mercaptobenzothiazole, a semiconductor corrosion inhibitor.
Example 5
The etching solution is used for etching a metal layer and a semiconductor layer, the semiconductor layer is an IGZO layer, and the thickness of the semiconductor layer is
Figure BDA0003679104330000144
The metal layer is formed by compounding a metal molybdenum layer and a metal copper layer, wherein the thicknesses of the molybdenum layer and the copper layer are respectively
Figure BDA0003679104330000145
And
Figure BDA0003679104330000146
the etching solution comprises the following components in percentage by mass:
Figure BDA0003679104330000147
Figure BDA0003679104330000151
in this embodiment, the etching temperature of the etching solution is 31 ℃, the spraying etching is adopted, and the flow rate of the etching solution is 20m 3 The etching time is 68s, and the pressure of the etching solution is controlled to be 0.001MPa when the etching solution is used.
Example 6
The etching solution is used for etching metal layers and semiconductor layersThe semiconductor layer is an IGZO layer, and the thickness of the semiconductor layer is
Figure BDA0003679104330000152
The metal layer is formed by compounding a metal molybdenum layer and a metal copper layer, wherein the thicknesses of the molybdenum layer and the copper layer are respectively
Figure BDA0003679104330000153
And
Figure BDA0003679104330000154
the etching solution comprises the following components in percentage by mass:
water (W) 48.1
Hydrochloric acid 5
Nitric acid 7
Hydrofluoric acid 2
Malonic acid 6
Malic acid 2
Aqueous ammonia 7
Sodium hydroxide 2
Tetramethyl ammonium hydroxide 6
5-octyl-1, 2, 3-benzotriazole 0.6
Mercaptobenzothiazoles 0.3
Phenyl ureas 5
Hydrogen peroxide solution 9
Is totaled 100
In this embodiment, the etching temperature of the etching solution is 31 ℃, the spraying etching is adopted, and the flow rate of the etching solution is 20m 3 The etching time is 68s, and the pressure of the etching solution is controlled to be 0.001MPa when the etching solution is used.
Example 7
The etching solution is used for etching a metal layer and a semiconductor layer, the semiconductor layer is an IGZO layer, and the thickness of the semiconductor layer is
Figure BDA0003679104330000155
The metal layer is formed by compounding a metal molybdenum layer and a metal copper layer, wherein the thicknesses of the molybdenum layer and the copper layer are respectively
Figure BDA0003679104330000156
And
Figure BDA0003679104330000157
the etching solution comprises the following components in percentage by mass:
water (W) 50.9
Hydrochloric acid 5
Nitric acid 6
Hydrofluoric acid 2
Malonic acid 7
Malic acid 2
Aqueous ammonia 6
Sodium hydroxide 3
Tetramethyl ammonium hydroxide 5
5-octyl-1, 2, 3-benzotriazole 0.7
Mercaptobenzothiazoles 0.4
Phenyl ureas 4
Hydrogen peroxide solution 8
Total up to 100
In this embodiment, the etching temperature of the etching solution is 31 ℃, the spraying etching is adopted, and the flow rate of the etching solution is 20m 3 The etching time is 68s, and the pressure of the etching solution is controlled to be 0.001MPa when the etching solution is used.
Comparative example 2
The etching solution of the comparative example is used for etching a metal layer and a semiconductor layer, wherein the semiconductor layer is an IGZO layer, and the thickness of the semiconductor layer is
Figure BDA0003679104330000161
The metal layer is formed by compounding a metal molybdenum layer and a metal copper layer, wherein the thicknesses of the molybdenum layer and the copper layer are respectively
Figure BDA0003679104330000162
And
Figure BDA0003679104330000163
the etching solution comprises the following components in percentage by mass:
water (I) 57.9
Hydrochloric acid 5
Nitric acid 6
Hydrofluoric acid 2
Malonic acid 7
Malic acid 2
Aqueous ammonia 2
Sodium hydroxide (NaOH) 2
Tetramethyl ammonium hydroxide 3
5-octyl-1, 2, 3-benzotriazole 0.7
Mercaptobenzothiazoles 0.4
Phenyl urea 4
Hydrogen peroxide solution 8
Total up to 100
In this embodiment, the etching temperature of the etching solution is 31 ℃, the spraying etching is adopted, and the flow rate of the etching solution is 20m 3 The etching time is 68s, and the pressure of the etching solution is controlled to be 0.001MPa when the etching solution is used. Comparative example 2 differs from example 7 in the total amount of alkaline material added.
Comparing the etched panels of examples 1 to 7 and comparative examples 1 to 2, the panels were observed by Scanning Electron Microscopy (SEM) to observe etching deviation, etching tilt angle, and residual condition of the metal layer or the semiconductor layer:
1) etch bias (CD-bias): the etching deviation value of 0.9-1.8 μm meets the requirement of etching precision;
2) etch dip (Taper angle): the etching inclination angle is 47 +/-5 degrees, and the etching speed meets the requirement;
3) metal layer or semiconductor layer residual state: no metal or metal oxide residue is denoted by "no".
And (3) testing the bearing capacity: and (3) testing the concentration of copper ions when the etching solution fails by using a spectrophotometer, wherein the concentration of the copper ions is required to be more than or equal to 4000ppm when the etching solution fails.
The observation results are shown in table 1 below:
TABLE 1
Figure BDA0003679104330000171
As can be seen from table 1, the etching solutions described in embodiments 1 to 7 can achieve synchronous etching of the metal layer and the semiconductor layer, and when the etching solution of the present invention is used for etching the metal layer and the semiconductor layer, CD-bias can be controlled within a range of 0.9 to 1.8 μm, so as to achieve ideal etching precision of the metal layer and the semiconductor layer, a taper angle can be controlled within 47 ± 5 °, so as to achieve an appropriate etching speed of the metal layer and the semiconductor layer, a bearing capacity of copper ions can reach more than 4000ppm, and a service cycle of the etching solution is longer.
Comparative example 1 compared with example 1, the amount of the semiconductive corrosion inhibitor added is too high to exceed 0.8%, resulting in molybdenum metal residue, and it can be seen that the semiconductive corrosion inhibitor of the present invention plays a role in metal etching regulation.
Comparative example 2, compared with example 7, in which the total amount of alkaline substance added was too low, the taper angle after etching was 41 ° and below 42 °, and the bearing capacity of copper ions was also reduced to 1500ppm, which is a criterion far below 4000ppm, it can be seen that the alkaline substance plays an important role in controlling the etching rate and the bearing capacity of the etching solution.
In conclusion, the etching solution can be used for simultaneously carrying out a plurality of metal layers (copper, titanium, molybdenum and niobium) and semiconductor layers (IGZO or ITO), controlling the shapes of the metal layers and the semiconductor layers and keeping high bearing capacity of the etching solution, and particularly in the aspect of etching a liquid crystal panel, the etching solution can remarkably shorten the production period of the liquid crystal panel and improve the productivity of the liquid crystal panel.
The applicant states that the etching solution and the application thereof of the present invention are described by the above embodiments, but the present invention is not limited to the above embodiments, i.e., the present invention is not limited to the above embodiments. It will be apparent to those skilled in the art that any modification of the present invention, equivalent substitutions of selected materials and additions of auxiliary components, selection of specific modes and the like, which are within the scope and disclosure of the present invention, are contemplated by the present invention.

Claims (10)

1. An etching solution for morphology control of metal layers and semiconductor layers, the etching solution comprising:
inorganic acid accounting for 5-20% of the etching liquid by mass, organic acid accounting for 8-15% of the etching liquid by mass, alkaline substance accounting for 8-15% of the etching liquid by mass, additive accounting for 4-8% of the etching liquid by mass, hydrogen peroxide accounting for 6-9% of the etching liquid by mass, and water accounting for 40-60% of the etching liquid by mass;
wherein the basic substance comprises a first main group metal hydroxide; the additive comprises a semiconductor corrosion inhibitor, and the mass percentage of the semiconductor corrosion inhibitor in the etching solution is 0.3-0.8%.
2. The etching solution of claim 1, wherein the inorganic acid comprises one or more selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, iodic acid, perchloric acid, phosphoric acid, boric acid, bromic acid, xenon acid, orthosilicic acid and metaphosphoric acid, and preferably, the inorganic acid comprises one or more selected from the group consisting of nitric acid, perchloric acid, phosphoric acid, iodic acid, bromic acid and metaphosphoric acid.
3. The etching solution of claim 1, wherein the organic acid comprises one or more of propionic acid, malonic acid, succinic acid, malic acid, alanine, citric acid, 2-methylbenzoic acid, phthalic acid, and 1,2, 4-benzenetricarboxylic acid.
4. The etching solution of claim 4, wherein the organic acid comprises at least two of malonic acid, succinic acid, malic acid, or citric acid.
5. The etching solution of claim 1, wherein the alkaline substance further comprises at least one of an organic base, an α -amino acid, and ferric hydroxide.
6. The etching solution of claim 1, wherein the additive further comprises at least one of a metal corrosion inhibitor and a hydrogen peroxide stabilizer.
7. The etching solution of claim 1, wherein the first main group metal hydroxide comprises one or more of lithium hydroxide, sodium hydroxide, potassium hydroxide and rubidium hydroxide.
8. The etching solution of claim 1, wherein the semiconductor corrosion inhibitor comprises at least one of dimercaprol and mercaptobenzothiazole.
9. A method for etching with the etching solution according to claim 1,
the using temperature of the etching solution is 31 +/-1 ℃;
the etching solution adopts a spraying type etching mode, and the flow rate is not less than 20m 3 /h；
The etching time of the etching solution is 30-70 s;
the pressure range of the etching solution is 0.001MPa-0.003MPa when in use.
10. Use of the etching solution according to claim 1.
CN202210629068.0A 2022-06-06 2022-06-06 Etching solution for controlling metal layer and semiconductor layer morphology and application thereof Pending CN114989826A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210629068.0A CN114989826A (en) 2022-06-06 2022-06-06 Etching solution for controlling metal layer and semiconductor layer morphology and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210629068.0A CN114989826A (en) 2022-06-06 2022-06-06 Etching solution for controlling metal layer and semiconductor layer morphology and application thereof

Publications (1)

Publication Number Publication Date
CN114989826A true CN114989826A (en) 2022-09-02

Family

ID=83030380

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210629068.0A Pending CN114989826A (en) 2022-06-06 2022-06-06 Etching solution for controlling metal layer and semiconductor layer morphology and application thereof

Country Status (1)

Country Link
CN (1) CN114989826A (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105648439A (en) * 2014-11-27 2016-06-08 三菱瓦斯化学株式会社 Liquid composition and etching method therewith
CN110219003A (en) * 2019-07-01 2019-09-10 江苏和达电子科技有限公司 For etching the etching solution and its application of the metal layer being made of layers of copper and molybdenum layer
CN110396693A (en) * 2018-04-25 2019-11-01 达兴材料股份有限公司 Etchant and engraving method and manufacture display device or method for semiconductor containing IGZO using it
TW201945520A (en) * 2018-03-27 2019-12-01 日商三菱瓦斯化學股份有限公司 Etchant capable of suppressing damage to IGZO
WO2020042206A1 (en) * 2018-08-30 2020-03-05 深圳市华星光电技术有限公司 Etching solution and etching method for copper-molybdenum metal coating
CN111808612A (en) * 2020-07-08 2020-10-23 江苏和达电子科技有限公司 Etching solution and etching supplementary solution for copper/molybdenum (niobium)/IGZO film layer, and preparation method and application thereof
CN111902569A (en) * 2018-03-26 2020-11-06 三菱瓦斯化学株式会社 Etching solution
CN113106454A (en) * 2021-03-24 2021-07-13 Tcl华星光电技术有限公司 Etching solution and etching method of copper/molybdenum metal wire
CN113529085A (en) * 2021-07-15 2021-10-22 深圳市华星光电半导体显示技术有限公司 Etching solution and etching method

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105648439A (en) * 2014-11-27 2016-06-08 三菱瓦斯化学株式会社 Liquid composition and etching method therewith
CN111902569A (en) * 2018-03-26 2020-11-06 三菱瓦斯化学株式会社 Etching solution
TW201945520A (en) * 2018-03-27 2019-12-01 日商三菱瓦斯化學股份有限公司 Etchant capable of suppressing damage to IGZO
CN110396693A (en) * 2018-04-25 2019-11-01 达兴材料股份有限公司 Etchant and engraving method and manufacture display device or method for semiconductor containing IGZO using it
WO2020042206A1 (en) * 2018-08-30 2020-03-05 深圳市华星光电技术有限公司 Etching solution and etching method for copper-molybdenum metal coating
CN110219003A (en) * 2019-07-01 2019-09-10 江苏和达电子科技有限公司 For etching the etching solution and its application of the metal layer being made of layers of copper and molybdenum layer
CN111808612A (en) * 2020-07-08 2020-10-23 江苏和达电子科技有限公司 Etching solution and etching supplementary solution for copper/molybdenum (niobium)/IGZO film layer, and preparation method and application thereof
CN113106454A (en) * 2021-03-24 2021-07-13 Tcl华星光电技术有限公司 Etching solution and etching method of copper/molybdenum metal wire
CN113529085A (en) * 2021-07-15 2021-10-22 深圳市华星光电半导体显示技术有限公司 Etching solution and etching method

Similar Documents

Publication Publication Date Title
KR102328443B1 (en) Liquid composition and etching process using same
KR101960342B1 (en) Echaing composition, method of preparing metal line and method of manufacturing array substrate using the same
KR101299131B1 (en) Etching composition for tft lcd
TWI598467B (en) Etching composition for preparing channel of thin film transistor and method of preparing channel of thin film transistor
KR20160064015A (en) Liquid composition and etching process using same
WO2020015193A1 (en) Copper/molybdenum etching solution composition and use thereof
CN111808612A (en) Etching solution and etching supplementary solution for copper/molybdenum (niobium)/IGZO film layer, and preparation method and application thereof
KR101404511B1 (en) Etchant composition, and method for etching a multi-layered metal film
WO2020015078A1 (en) Copper/molybdenum etching solution composition and application thereof
KR20150045220A (en) Etchant composition for metal wire and method for preparing metal wire using the same
KR20140078924A (en) Composition for etching metal layer and method for etching using the same
CN113106453A (en) Etching solution composition and application thereof
CN102234805A (en) Metal wiring etching solution and metal wiring forming method using the same
CN110219003B (en) Etching solution for etching metal layer composed of copper layer and molybdenum layer and application thereof
CN110438505A (en) Wafer-level packaging titanium seed etching solution
TWI614550B (en) Manufacturing method of array substrate for liquid crystal display and etching liquid compositions for multi film thereof
CN114989826A (en) Etching solution for controlling metal layer and semiconductor layer morphology and application thereof
KR101394469B1 (en) Etchant composition, and method for etching a multi-layered metal film
CN110230059B (en) Method for manufacturing metal pattern of display panel
US20190144748A1 (en) Cu-MoTi ETCHING SOLUTION
CN112981404B (en) Titanium alloy etching solution composition and use method thereof
KR101804573B1 (en) An etching solution composition
KR20140028446A (en) Etchant composition for etching metal wire and method for preparing metal wire using the same
KR20090086694A (en) Fabrication method of thin film transistor, etching solution composition used the method
US10125316B2 (en) Etching solution and manufacturing method of display

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination