CN114978326A - Broadband arbitrary waveform optical generator chip - Google Patents
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Abstract
The invention discloses a broadband arbitrary waveform optical generator chip which can realize high frequency and broadband arbitrary waveform microwave signal synthesis. The method comprises the following steps: the device comprises a first grating coupler (2), a polarization multiplexing high-speed electro-optic modulator (3), an on-chip polarization beam splitter (6), a narrow-band optical filter (7), a second grating coupler (8), a third grating coupler (11), a first on-chip high-speed photoelectric detector (12) and a second on-chip high-speed photoelectric detector (13). The invention is based on the random waveform optical generator chip architecture of the Fourier domain mode-locked photoelectric oscillator mechanism and the plasma dispersion high-speed modulation mechanism on the silicon chip, and integrates a plurality of key integrated photoelectric devices such as a grating coupler, a polarization multiplexing high-speed photoelectric modulator, a narrow-band optical filter, a high-speed photoelectric detector and the like on a single chip in a high density manner, and realizes the fine and quick regulation and control of multi-dimensional parameters such as microwave frequency, phase and the like based on the on-chip Fourier domain mode-locked photoelectric oscillator and the plasma dispersion effect.
Description
Technical Field
The invention belongs to the technical field of microwave photonics and silicon-based photonics, and particularly relates to a broadband arbitrary waveform optical generator chip.
Background
An arbitrary waveform generator is a complex signal source, belongs to a core key electronic measuring instrument, can generate an arbitrary waveform microwave signal within a rated frequency and output range, and is like the heart of modern electronic information equipment and systems. The random waveform generator is used as a key instrument and equipment, is widely applied to the fields of Internet of things, aerospace, artificial intelligence, biomedical treatment, automotive electronics and the like, and particularly in a radar detection system and a high-speed communication system, is used for generating broadband radar waveform signals and communication signals of various complex modulation formats and becomes a key part for determining the overall performance of the system. With the rapid development of the new generation of electronic information technology, the development of electronic information equipment and systems to high frequency and broadband is promoted, and new requirements are put forward on any waveform generator.
At present, the existing arbitrary waveform generator is realized by adopting a Direct Digital Synthesis (DDS) technology. By adopting a digital sampling storage technology, according to parameters such as preset sampling frequency, signal bandwidth, time width, coding mode and the like, DDS calculates sampling values of each point of a signal, stores the sampling values in a high-speed memory in advance, and generates a broadband random modulation signal through a digital-to-analog conversion circuit. However, due to the nonlinearity of digital circuits, the output signal is very stray, and it is often difficult to achieve high-purity signal generation. In addition, the storage capacity of the current mainstream FPGA chip is difficult to meet the storage requirement of large-bandwidth waveform data, and the generation of high-frequency and broadband arbitrary waveform signals is difficult to realize. Therefore, it is necessary to provide a new technical solution to overcome the limitations of the traditional DDS-based arbitrary waveform generator system architecture in terms of signal frequency, bandwidth, and the like.
As a novel microwave signal generation technology, the microwave photon signal generation has the remarkable advantages of large bandwidth, low phase noise and the like, and becomes a key technology for breaking the bandwidth bottleneck of the traditional DDS scheme. The photoelectric oscillator is used as a novel microwave signal optical synthesis technology and has the remarkable advantages of ultra-low phase noise, tunable broadband and the like. Currently, the Frequency of microwave signals output by a prototype of the optical-electrical oscillator principle can reach above 60GHz [ H.Peng, C.Zhang, X.Xie, T.Sun, P.Guo, X.Zhu, W.Hu, and Z.Chen, "Tunable DC-60GHz RF generation using a dual-loop optical oscillator basic on a localized Brillouin calibration," Journal of light Technology 33(13), "2707-" 2015 5 ], Phase noise at 10GHz of output Frequency of-163 dBc/Hz @10kHz, quantum noise limit values [ D.Eliya, D.Seidel, and L.Maleki, "noise of a high-Frequency O-channel, and noise of Phase noise, and" noise of signal noise of 12 noise-811, "IEEE-Frequency analysis of noise-814. The photoelectric oscillators in jet propulsion laboratories, army equipment laboratories, naval laboratories, and the like have been studied for over twenty years. In terms of OEO miniaturization, The american company OEwaves is a lead enterprise in The field of optoelectronic oscillators, which has introduced various models of optoelectronic oscillator products [ l.maleki, "The optoelectronic oscillator," Nature Photonics,5(12),728 (2011) ]. At present, the research on the optoelectronic oscillator is moving towards high frequency band, integration, impact resistance and overload resistance.
However, most of the existing photoelectric oscillator schemes can only generate single-frequency microwave signals, and cannot realize broadband arbitrary waveform signal synthesis. In addition, most of the existing systems are realized based on discrete optoelectronic devices, and the problems of complex structure, poor stability, large size, high power consumption and the like exist. With the rapid development of the integrated photon technology, the microwave photon system chip is prepared by using the ultra-large scale and ultra-fine photon integration technology, so that the size of the microwave photon system can be obviously reduced, the power consumption is reduced, the cost is saved, the stability is improved, and the method becomes one of the international leading-edge hotspot research directions.
In conclusion, the novel idea of generating the microwave photon signal is of great significance in researching and developing the broadband arbitrary waveform optical generator chip by means of the modern super-large scale and hyperfine photon integration process.
Disclosure of Invention
The invention discloses a broadband arbitrary waveform optical generator chip which can realize high-frequency synthesis of broadband arbitrary waveform microwave signals.
The invention is realized by the following technical scheme.
A broadband arbitrary waveform optical generator chip comprising: the device comprises a first grating coupler (2), a polarization multiplexing high-speed electro-optic modulator (3), an on-chip polarization beam splitter (6), a narrow-band optical filter (7), a second grating coupler (8), a third grating coupler (11), a first on-chip high-speed photodetector (12) and a second on-chip high-speed photodetector (13); wherein the content of the first and second substances,
an off-chip laser (1) generates a continuous optical signal, the continuous optical signal is incident into a chip through a first grating coupler (2) and then is injected into the polarization multiplexing high-speed electro-optical modulator (3), an off-chip multichannel direct-current power supply (4) provides direct-current bias voltage for the polarization multiplexing high-speed electro-optical modulator (3), and an off-chip low-speed code element generator (5) generates a baseband code element modulation signal to the polarization multiplexing high-speed electro-optical modulator (3);
the polarization multiplexing high-speed electro-optical modulator (3) divides a generated modulation signal into two paths after passing through an on-chip polarization beam splitter (6), one path of the modulation signal is incident into a narrow-band optical filter (7) and is used for converting phase modulation into intensity modulation, the filtered optical signal passes through a second grating coupler (8) and is transmitted to an off-chip optical amplifier (10) through an off-chip delay optical fiber (9) for amplification, then the filtered optical signal is incident into a chip again through a third grating coupler (11), then the filtered optical signal is subjected to photoelectric conversion through a first on-chip high-speed photoelectric detector (12), and the generated electric signal is injected into the polarization multiplexing high-speed electro-optical modulator (3) again to form a photoelectric oscillator loop; and a Fourier domain mode locking is formed by adjusting the central frequency of the narrow-band optical filter (7), a broadband microwave signal is generated, the broadband microwave signal is simultaneously injected into the polarization multiplexing high-speed electro-optical modulator (3) for modulation, the modulated signal passes through the on-chip polarization beam splitter (6), is subjected to photoelectric conversion by a second on-chip high-speed photoelectric detector (13), and then is incident into a high-speed oscilloscope (14), so that the generation of multiple waveforms of a single-frequency microwave signal, a broadband linear frequency modulation signal, a multiband linear frequency modulation signal and a microwave vector signal is realized.
The invention has the beneficial effects that:
the invention can break the bandwidth bottleneck limit of the traditional DDS technology by adopting a new idea of microwave photon signal generation, and realize the generation of high-frequency and broadband arbitrary waveform signals; by providing a chip topological structure of a broadband arbitrary waveform optical generator and by means of a modern superfine silicon-based photon integration process, high-density monolithic integration of a plurality of key photoelectric devices such as a grating coupler, a polarization multiplexing high-speed electro-optic modulator, a narrow-band optical filter, a high-speed photoelectric detector and the like is realized, the volume of a microwave photon signal generation system is expected to be greatly reduced, the power consumption and the cost are reduced, and the system stability is improved; meanwhile, the micro-nano silicon-based optical waveguide physical structure can remarkably enhance the interaction and coupling between multidimensional physical fields such as a light-electricity-heat-structure and the like, and is expected to further improve the performance of an optical generator with any waveform in the aspects of output signal bandwidth, waveform switching speed and the like.
Drawings
FIG. 1 is a schematic diagram of the operation of a broadband arbitrary waveform optical generator chip of the present invention;
FIG. 2 is a schematic structural diagram of a polarization-division multiplexing high-speed electro-optic modulator according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a narrowband optical filter according to an embodiment of the present invention;
FIG. 4 is a graph of experimental results of broadband microwave signals generated by an arbitrary waveform optical generator chip according to the present invention.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
The realization principle of the invention is as follows: the invention relates to an arbitrary waveform optical generator chip architecture based on a Fourier domain mode-locked photoelectric oscillator mechanism and a plasma dispersion high-speed modulation mechanism on a silicon chip, a plurality of key integrated photoelectric devices such as a grating coupler, a polarization multiplexing high-speed photoelectric modulator, a narrow-band optical filter, a high-speed photoelectric detector and the like are integrated on a single chip in a high density mode, and the fine and quick regulation and control of multi-dimensional parameters such as microwave frequency, phase and the like are realized based on the on-chip Fourier domain mode-locked photoelectric oscillator and the plasma dispersion effect.
As shown in fig. 1, the broadband arbitrary waveform optical generator chip of the present embodiment includes: the device comprises a first grating coupler 2, a polarization multiplexing high-speed electro-optic modulator 3, an on-chip polarization beam splitter 6, a narrow-band optical filter 7, a second grating coupler 8, a third grating coupler 11, a first on-chip high-speed photodetector 12 and a second on-chip high-speed photodetector (13); wherein the content of the first and second substances,
an off-chip laser (1) generates a continuous optical signal, the continuous optical signal is incident into a chip through a first grating coupler (2) and then is injected into the polarization multiplexing high-speed electro-optical modulator (3), an off-chip multichannel direct-current power supply (4) provides direct-current bias voltage for the polarization multiplexing high-speed electro-optical modulator (3), and an off-chip low-speed code element generator (5) generates a baseband code element modulation signal to the polarization multiplexing high-speed electro-optical modulator (3);
the polarization multiplexing high-speed electro-optical modulator (3) divides a generated modulation signal into two paths after passing through an on-chip polarization beam splitter (6), one path of the modulation signal is incident into a narrow-band optical filter (7) and is used for converting phase modulation into intensity modulation, the filtered optical signal passes through a second grating coupler (8) and is transmitted to an off-chip optical amplifier (10) through an off-chip delay optical fiber (9) for amplification, then the filtered optical signal is incident into a chip again through a third grating coupler (11), then the filtered optical signal is subjected to photoelectric conversion through a first on-chip high-speed photoelectric detector (12), and the generated electric signal is injected into the polarization multiplexing high-speed electro-optical modulator (3) again to form a photoelectric oscillator loop; a Fourier domain mode locking is formed by adjusting the central frequency of the narrow-band optical filter (7), so that the optical generation of a wide-band microwave signal is realized, the generated microwave signal is simultaneously injected into the polarization multiplexing high-speed electro-optical modulator (3) for modulation, the modulated signal passes through the on-chip polarization beam splitter (6), is subjected to photoelectric conversion by a second on-chip high-speed photoelectric detector (13), and then is incident into a high-speed oscilloscope (14), so that the generation of various waveforms of a single-frequency microwave signal, a wide-band chirp signal, a multi-band chirp signal and a microwave vector signal is realized.
As shown in fig. 2, the polarization multiplexing high-speed electro-optical modulator (3) according to the present embodiment includes 1 upper double-parallel mach-zehnder modulator, 1 lower double-parallel mach-zehnder modulator, 1 90 ° polarization rotator, and 1 polarization beam combiner; the lower double-parallel Mach-Zehnder modulator is connected with the 90-degree polarization rotator and then connected with the upper double-parallel Mach-Zehnder modulator through the polarization beam combiner.
In this embodiment, each of the upper and lower dual parallel-mach-zehnder modulators includes two microwave input ports and three dc offset ports; the double-parallel Mach-Zehnder modulator realizes equivalent phase modulation, single-sideband modulation, bilateral modulation for inhibiting carrier waves and +/-2-order sideband modulation for inhibiting the carrier waves by adjusting the phase difference of two paths of radio frequency signals input into the upper and lower parallel Mach-Zehnder modulators to obtain three direct current bias voltages.
As shown in fig. 3(a), the narrow-band optical filter (7) in this embodiment adopts a racetrack micro-ring resonator structure. In order to reduce the bandwidth of the micro-ring resonant cavity and improve the optical field constraint capability of the micro-ring resonant cavity, a multi-mode waveguide structure is adopted in a runway part of the micro-ring resonant cavity. Fig. 3(b) shows a schematic cross-sectional view of a multimode waveguide having a ridge waveguide structure and a waveguide width of 2 um. In order to quickly tune the resonance wavelength of the micro-ring resonant cavity, a layer of metal micro-nano heating electrode is deposited above the multimode waveguide. Based on the thermo-optic effect, through direct-current voltage modulation, the metal heating diffusion causes the refractive index of the micro-disk waveguide to change along with the temperature, and causes the resonance wavelength of the micro-disk resonant cavity to change. In order to effectively suppress the generation of the higher-order mode, the curved waveguide portion adopts a single-mode waveguide structure, and fig. 3(c) shows a schematic cross-sectional view of the single-mode waveguide, which also adopts a ridge-type waveguide structure, and the waveguide width is 500 nm.
In order to verify the feasibility of the scheme provided by the invention, a broadband arbitrary waveform optical generator is constructed based on discrete optoelectronic devices, and the experimental result is shown in fig. 4. Firstly, based on the structure of the optoelectronic oscillator, the generation of a low-phase-noise microwave signal is realized, and the frequency spectrum of the generated microwave signal is shown in fig. 4(a), the signal frequency is 10.09GHz, and the spurious suppression ratio is 50.4 dB. Figure 4(b) shows a time-frequency diagram of the resulting broadband chirped microwave signal. By utilizing the polarization multiplexing high-speed electro-optical modulator (3), equivalent phase modulation and optical domain frequency multiplication are simultaneously realized, and finally, linear frequency modulation signal synthesis with the bandwidth as high as 10.8GHz is realized, and the central frequency tuning range of the synthesized signal exceeds 30 GHz. By adjusting the direct-current bias voltage of the polarization multiplexing high-speed electro-optical modulator (3), the system realizes the synthesis of dual-band linear frequency modulation signals, and the time-frequency relationship of the signals is shown in fig. 4 (c). In addition, based on the system, by injecting the baseband code element modulation signal generated by the low-speed code element generator (5) into the polarization multiplexing high-speed electro-optical modulator (3), and by adjusting the phase of the input signal and the DC bias voltage of the polarization multiplexing high-speed electro-optical modulator (3), high-quality microwave vector signal synthesis is also realized, and the constellation diagram is shown in FIG. 4 (d).
In summary, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A broadband arbitrary waveform optical generator chip, comprising: the device comprises a first grating coupler (2), a polarization multiplexing high-speed electro-optic modulator (3), an on-chip polarization beam splitter (6), a narrow-band optical filter (7), a second grating coupler (8), a third grating coupler (11), a first on-chip high-speed photodetector (12) and a second on-chip high-speed photodetector (13); wherein the content of the first and second substances,
an off-chip laser (1) generates a continuous optical signal, the continuous optical signal is incident into a chip through a first grating coupler (2) and then is injected into the polarization multiplexing high-speed electro-optical modulator (3), an off-chip multichannel direct-current power supply (4) provides direct-current bias voltage for the polarization multiplexing high-speed electro-optical modulator (3), and an off-chip low-speed code element generator (5) generates a baseband code element modulation signal to the polarization multiplexing high-speed electro-optical modulator (3);
the polarization multiplexing high-speed electro-optical modulator (3) divides a generated modulation signal into two paths after passing through an on-chip polarization beam splitter (6), one path of the modulation signal is incident into a narrow-band optical filter (7) and is used for converting phase modulation into intensity modulation, the filtered optical signal passes through a second grating coupler (8) and is transmitted to an off-chip optical amplifier (10) through an off-chip delay optical fiber (9) for amplification, then the filtered optical signal is incident into a chip again through a third grating coupler (11), then the filtered optical signal is subjected to photoelectric conversion through a first on-chip high-speed photoelectric detector (12), and the generated electric signal is injected into the polarization multiplexing high-speed electro-optical modulator (3) again to form a photoelectric oscillator loop; and a Fourier domain mode locking is formed by adjusting the central frequency of the narrow-band optical filter (7), a broadband microwave signal is generated, the broadband microwave signal is simultaneously injected into the polarization multiplexing high-speed electro-optical modulator (3) for modulation, the modulated signal passes through the on-chip polarization beam splitter (6), is subjected to photoelectric conversion by a second on-chip high-speed photoelectric detector (13), and then is incident into a high-speed oscilloscope (14), so that the generation of multiple waveforms of a single-frequency microwave signal, a broadband linear frequency modulation signal, a multiband linear frequency modulation signal and a microwave vector signal is realized.
2. The broadband arbitrary waveform optical generator chip according to claim 1, wherein the polarization multiplexing high-speed electro-optical modulator (3) comprises 1 upper double parallel mach-zehnder modulator, 1 lower double parallel mach-zehnder modulator, 1 90 ° polarization rotator, and 1 polarization beam combiner; the lower double-parallel Mach-Zehnder modulator is connected with the 90-degree polarization rotator and then connected with the upper double-parallel Mach-Zehnder modulator through the polarization beam combiner.
3. The wideband arbitrary waveform optical generator chip of claim 2 wherein the upper and lower double parallel-mach-zehnder modulators each include two microwave input ports and three dc offset ports; the double-parallel Mach-Zehnder modulator realizes equivalent phase modulation, single-sideband modulation, bilateral modulation for inhibiting carrier waves and +/-2-order sideband modulation for inhibiting the carrier waves by adjusting the phase difference of two paths of radio frequency signals input into the upper and lower parallel Mach-Zehnder modulators to obtain three direct current bias voltages.
4. A broadband arbitrary waveform optical generator chip as claimed in claim 1, 2 or 3, wherein said narrow band optical filter (7) employs a racetrack micro-ring resonator structure.
5. The wideband arbitrary waveform optical generator chip of claim 4 wherein the racetrack portion of the microring resonator structure is a multimode waveguide structure.
6. The wideband arbitrary waveform optical generator chip of claim 5 wherein the multimode waveguide is a ridge waveguide structure with a waveguide width of 2 um.
7. The wideband arbitrary waveform optical generator chip of claim 5 or 6 where a metal micro-nano heating electrode is deposited over the multimode waveguide.
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